Semiconductor element manufacturing mechanism capable of preventing residual pollution gas from corroding substrate

Abstract

The invention discloses a semiconductor element manufacturing mechanism capable of preventing residual pollution gas from corroding a substrate, which comprises an upper shell assembly, a lower shell assembly, an element placing assembly, a nitrogen supply assembly and a waste gas exhaust assembly, the nitrogen supply assembly comprises a nitrogen source connecting pipe, a constant-pressure adjusting device, a purifying machine, an electric switch device, a heating pipe assembly, an upper connecting branch pipe and an injection assembly which are connected in sequence, and the waste gas exhaust assembly comprises an upper connecting cavity, an exhaust amplification assembly and a lower exhaust pipeline. On semiconductor etching equipment, after substrate engineering is carried out, when gas left on the surface is exposed in the atmosphere, moisture is formed after the gas reacts with gas in the atmosphere. On one hand, the nitrogen supply assembly is adopted to spray nitrogen supplied at a certain temperature and pressure to the element placement assembly, and on the other hand, the waste gas exhaust assembly is adopted to exhaust pollution gas, so that the problem of residual corrosion of the pollution gas to the semiconductor element is solved.

Description

Technical Field

[0001] The invention relates to semiconductor technology, and in particular to a semiconductor element manufacturing mechanism which prevents residual polluted gas from corroding a substrate. Background Art

[0002] At present, general semiconductor manufacturing processes include etching, evaporation and other processes, which are carried out in a vacuum chamber (Chamber) under vacuum or above vacuum conditions and filled with process gases. Although most of the process gases mentioned above will be discharged from the chamber during the process, even after being ejected from the chamber (Chamber), some will remain on the surface of the substrate, which will affect the substrate or cause pollution to the equipment used in the process, which becomes a problem.

[0003] Patent document with application number "CN201110045509.4" discloses a method for manufacturing a semiconductor element, which can eliminate the influence of parasitic elements and prevent the on-state voltage from increasing. A groove (3) is formed on the front surface of a semiconductor substrate, which penetrates the base region and reaches the drift region (1). Next, a gate electrode (5) is buried in the groove (3) through a gate insulating film (4) so ​​as not to reach the same height as the surface of the base region (2), thereby forming a second recess. Next, an interlayer insulating film (7) is formed in a manner buried in the second recess. Next, deep etching is performed, and only the interlayer insulating film (7) remains on the surface of the gate electrode (5). However, by etching, the surface layer of the base region (2) is removed until the surface of the base region (2) is located at a position lower than the interface between the gate electrode (5) and the interlayer insulating film (7), thereby forming a first recess (6). Next, a source electrode (8) is buried in the first recess (6).

[0004] Patent document with application number "CN202280022680.X" discloses a method for manufacturing a semiconductor substrate for a high-performance memory element with high production efficiency. A method for manufacturing a semiconductor substrate for a memory element, comprising: step (1), wherein a semiconductor substrate having a titanium-containing film, a metal tungsten film, and a tungsten oxide film is contacted with a pretreatment agent to remove at least a portion of the aforementioned tungsten oxide film, wherein the titanium-containing film comprises at least one of titanium and a titanium alloy; step (2), wherein the semiconductor substrate after step (1) is contacted with an etchant to remove at least a portion of the aforementioned titanium-containing film, wherein the pretreatment agent comprises a tungsten oxide etchant selected from at least one of the group consisting of an acid, ammonia, and an ammonium salt.

[0005] The above patent document, combined with the prior art, reveals that the existing semiconductor device manufacturing mechanism for preventing residual polluted gas from corroding the substrate has the following defects:

[0006] Generally, most of the current equipment will use the pressure difference of the semiconductor engineering's own exhaust pipe to exhaust the polluted gas. With the improvement of the integration of substrate manufacturing technology, the polluted gas on the surface of the micro-engineering substrate cannot be discharged, and remains inside the EFEM and the substrate storage department, which will corrode the inside of the EFEM and affect the substrate yield. Summary of the invention

[0007] In order to overcome the deficiencies of the prior art, the present invention provides a semiconductor element manufacturing mechanism that prevents residual pollutant gas from corroding the substrate, thereby solving the problem of residual pollutant gas corroding the substrate.

[0008] The first aspect of the present invention is to provide a semiconductor element manufacturing mechanism for preventing residual polluted gas from corroding the substrate, comprising an upper shell component, a lower shell component, a component placement component, a nitrogen supply component, and an exhaust gas exhaust component. The component placement component is open on one side and is located in the upper shell component. The component placement component is provided with a plug-in board for placing semiconductor components; the nitrogen supply component comprises a nitrogen source connecting pipe, a constant pressure regulating device, a purifier, an electric switch device, a heating pipe component, an upper connecting branch pipe, and an injection component connected in sequence. The injection component is inserted into the component placement component, and the injection component is provided with a number of uniformly distributed injection holes along the part of the component placement component; the exhaust gas exhaust component comprises an upper connecting cavity, an exhaust amplification component, and a lower exhaust pipeline. The upper connecting cavity is connected to the component placement component and is used to guide the exhaust gas. The exhaust amplification component is respectively connected to the upper connecting cavity and the lower exhaust pipeline, and an air supply fan is provided on the exhaust amplification component. On the semiconductor etching equipment, after the substrate engineering is carried out, the residual gas on the surface is exposed to the atmosphere and reacts with the gas (Gas) in the atmosphere to form moisture. On the one hand, the present application uses a nitrogen supply component to spray nitrogen supplied at a certain temperature and pressure to the component placement component, and on the other hand, uses an exhaust gas exhaust component to remove polluted gases, thereby solving the problem of residual corrosion of polluted gases to semiconductor components.

[0009] In the first aspect of the present invention, as a preferred embodiment, the plug-in board is divided into an inner plug-in board and two side plug-in boards, and the two side plug-in boards are arranged on both sides of the inner plug-in board.

[0010] In the first aspect of the present invention, as a preferred embodiment, the inner plug-in board and the side plug-in board are both provided with a plurality of plug-in slots.

[0011] In the first aspect of the present invention, as a preferred embodiment, the semiconductor element manufacturing mechanism for preventing residual polluted gas from corroding the substrate further includes a side control component.

[0012] In the first aspect of the present invention, as a preferred embodiment, the upper connecting cavity is fan-shaped, and the large end of the upper connecting cavity is connected to the component placement assembly.

[0013] In the first aspect of the present invention, as a preferred embodiment, a gas humidity measuring device is provided on the upper connecting cavity.

[0014] In the first aspect of the present invention, as a preferred embodiment, a gas humidity measuring device and a pressure difference measuring device are provided on the upper connecting cavity.

[0015] In the first aspect of the present invention, as a preferred embodiment, an air supply fan is provided on the exhaust amplification component, and the exhaust amplification component is provided with an arc-shaped channel along the length direction for amplification by utilizing the Coanda effect.

[0016] In the first aspect of the present invention, as a preferred embodiment, a basic position sensor is disposed on the top of the upper housing assembly.

[0017] In the first aspect of the present invention, as a preferred embodiment, an upper reflective plate and a lower reflective plate are respectively provided on the upper and lower sides of the component placement assembly.

[0018] In the first aspect of the present invention, as a preferred embodiment, the component placement assembly is provided with a placement cavity, and side observation windows are provided on both sides of the placement cavity.

[0019] Compared with the prior art, the present invention has the following beneficial effects:

[0020] The component placement assembly is open on one side and is located in the upper housing assembly. The component placement assembly is provided with a plug-in board for placing semiconductor components; the nitrogen supply assembly includes a nitrogen source connecting pipe, a constant pressure regulating device, a purifier, an electric switch device, a heating pipe assembly, an upper connecting branch pipe, and an injection assembly connected in sequence. The injection assembly is inserted into the component placement assembly, and the injection assembly is provided with a number of uniformly distributed injection holes along the part of the component placement assembly; the exhaust gas discharge assembly includes an upper connecting cavity, an exhaust amplification assembly, and a lower exhaust pipeline. The upper connecting cavity is connected to the component placement assembly and is used to guide the exhaust gas. The exhaust amplification assembly is connected to the upper connecting cavity and the lower exhaust pipeline respectively, and an air supply fan is provided on the exhaust amplification assembly. On the semiconductor etching equipment, after the substrate engineering is carried out, the residual gas on the surface is exposed to the atmosphere and reacts with the gas (Gas) in the atmosphere to form moisture. On the one hand, the present application uses a nitrogen supply assembly to spray nitrogen supplied at a certain temperature and pressure to the component placement assembly, and on the other hand, an exhaust gas discharge assembly is used to remove polluted gas, thereby solving the problem of residual corrosion of polluted gas to semiconductor components. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 A perspective view of the present invention;

[0022] Figure 2 is another stereogram of the present invention;

[0023] Figure 3 It is another three-dimensional diagram of the present invention;

[0024] Figure 4 It is another three-dimensional diagram of the present invention;

[0025] Figure 5 It is an internal stereogram;

[0026] Figure 6 A perspective view of a nitrogen supply assembly;

[0027] Figure 7 A partial perspective view of a nitrogen supply assembly;

[0028] Figure 8 A perspective view of an exhaust gas discharge assembly;

[0029] Fig. 9 This is a partial structural diagram of the exhaust amplification component.

[0030] In the figure: 10, upper housing assembly; 101, basic position sensor; 20, lower housing assembly; 21, roller; 22, adjustment foot; 30, component placement assembly; 31, placement cavity; 311, side observation window; 32, inner plug-in board; 33, side plug-in board; 34, lower reflector; 35, upper reflector;

[0031] 100. Nitrogen supply assembly; 41. Nitrogen source connecting pipe; 42. Constant pressure regulating device; 43. Purifier; 44. Electric switch device; 45. Heating pipe assembly; 46. Upper connecting branch pipe; 50. Injection assembly; 501. Injection hole; 200. Exhaust gas discharge assembly; 60. Upper connecting cavity; 61. Gas humidity measuring device; 62. Pressure difference measuring device; 70. Exhaust amplification assembly; 701. Air supply fan; 71. Arc channel; 80. Lower exhaust pipeline; 90. Side control assembly. DETAILED DESCRIPTION

[0032] Below, in conjunction with the accompanying drawings and specific embodiments, the invention is further described. It should be noted that, under the premise of no conflict, the various embodiments described below or the various technical features can be arbitrarily combined to form a new embodiment. Except as otherwise specified, the materials and equipment used in this embodiment can be purchased from the market. Examples of the embodiments are shown in the accompanying drawings, in which the same or similar reference numerals throughout represent the same or similar elements or elements with the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present application, and cannot be understood as limiting the present application.

[0033] In the description of the present application, it should be understood that the terms "upper", "lower", "front", "back", "vertical", "horizontal", "top", "bottom", "inside", "outside" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific position, be constructed and operated in a specific position, and therefore cannot be understood as a limitation on the present application. In the description of the present application, "plurality" means two or more, unless otherwise precisely and specifically specified.

[0034] In the description of this application, it should be noted that, unless otherwise clearly specified and limited, the terms "connected", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, or it can be connected through an intermediary medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0035] The terms "first", "second", etc. in the specification and claims of this application and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions. For example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0036] like Figure 1-9As shown, a semiconductor element manufacturing mechanism for preventing residual polluted gas from corroding a substrate comprises an upper housing assembly 10, a lower housing assembly 20, a component placement assembly 30, a nitrogen supply assembly 100, and an exhaust gas exhaust assembly 200. The component placement assembly 30 has an opening on one side and is located in the upper housing assembly 10. A plug-in board for placing semiconductor elements is arranged in the component placement assembly 30. The nitrogen supply assembly 100 comprises a nitrogen source connecting pipe 41, a constant pressure regulating device 42, a purifier 43, an electric switch device 44, a heating pipe assembly 45, an upper connecting pipe 46, a constant pressure regulating device 47, a purifier 48, an electric switch device 49, a heating pipe assembly 50, and an exhaust gas exhaust assembly 51. The branch pipe 46 and the injection assembly 50 are inserted into the component placement assembly 30, and the injection assembly 50 is provided with a number of uniformly distributed injection holes 501 along the part of the component placement assembly 30; the exhaust gas discharge assembly 200 includes an upper connection cavity 60, an exhaust amplification assembly 70, and a lower exhaust pipeline 80, the upper connection cavity 60 is connected to the component placement assembly 30 and is used to guide the exhaust gas, the exhaust amplification assembly 70 is respectively connected to the upper connection cavity 60 and the lower exhaust pipeline 80, and the exhaust amplification assembly 70 is provided with an air supply fan 701. On the semiconductor etching equipment, after the substrate engineering is carried out, the residual gas on the surface is exposed to the atmosphere and reacts with the gas (Gas) in the atmosphere to form moisture. On the one hand, the present application adopts a nitrogen supply assembly 100 to spray nitrogen supplied at a certain temperature and pressure to the component placement assembly 30, and on the other hand, the exhaust gas discharge assembly 200 is used to remove the polluted gas, thereby solving the problem of residual corrosion of the polluted gas to the semiconductor components.

[0037] Specifically, spraying heated nitrogen (N2) can suppress the formation of surface moisture, thereby removing the generated moisture. When nitrogen (N2) gas is sprayed, it is supplied at a certain temperature and pressure. When the pressure regulator and gas are sprayed, the pressure and temperature of the end nozzle (Nozzle) are measured to achieve uniform spraying.

[0038] In the first aspect of the present invention, as a preferred embodiment, the plug-in board is divided into an inner plug-in board 32 and two side plug-in boards 33, and the two side plug-in boards 33 are arranged on both sides of the inner plug-in board 32. Specifically, the upper housing assembly 10 prevents the substrate storage part from being impacted and interfered with from the outside, and also includes a window through which the substrate can be observed from the outside. In order to prevent the air inside the EFEM from flowing to the outside, the lower housing assembly 20 has a blocking function and prevents the internal device from being impacted and interfered with from the outside.

[0039] In the first aspect of the present invention, as a preferred embodiment, the inner plug-in plate 32 and the side plug-in plate 33 are both provided with a plurality of plug-in slots.

[0040] In the first aspect of the present invention, as a preferred embodiment, the semiconductor element manufacturing mechanism for preventing residual polluted gas from corroding the substrate further includes a side control component 90.

[0041] In the first aspect of the present invention, as a preferred embodiment, the upper connecting cavity 60 is fan-shaped, and the large end of the upper connecting cavity 60 is connected to the component placement assembly 30. The upper connecting cavity 60 is a funnel for collecting polluted residual gas.

[0042] In the first aspect of the present invention, as a preferred embodiment, the upper connection chamber 60 is provided with a gas humidity measuring device 61 and a pressure difference measuring device 62. A space for gathering gas is provided at the beginning of exhaust, so that a large amount of discharged polluted gas can be collected. A humidity sensor is installed, and by measuring the humidity of the discharged gas, the humidity inside the substrate storage unit can be indirectly measured.

[0043] In the first aspect of the present invention, as a preferred embodiment, the exhaust amplifier component 70 is provided with an air supply fan 701, and the exhaust amplifier component 70 is provided with an arc channel 71 along the length direction that utilizes the Coanda effect for amplification. Specifically, the Coanda effect refers to the phenomenon that a fluid tends to flow along a curved surface rather than a straight line. Fluid adhesion: When a fluid approaches a curved surface, the fluid pressure decreases due to the surface curvature, causing the fluid to adhere to the surface and flow. Wide application: The Coanda effect has important applications in many fields, such as aviation, automobiles and fluid machinery design. An amplifier utilizing the Coanda effect is installed at the exhaust port to reduce the surface pressure and increase the exhaust. When the exhaust increases, in order to maintain a certain constant pressure difference inside, the air volume of the amplifier is controlled by a motor fan instead of compressed air, because the air volume supplied can be actively adjusted. The exhaust amplifier is installed in the exhaust pipe and is made by utilizing the Coanda effect. According to the principle that the fluid will speed up when flowing along the surface, the exhaust speed is accelerated, so that the exhaust is increased. Specifically, the air supply fan 701 is a device that supplies air to the exhaust amplifier, and adjusts the amount of supplied air according to the set value of the differential pressure of the main control device.

[0044] In the first aspect of the present invention, as a preferred embodiment, a basic position sensor 101 is provided on the top of the upper housing assembly 10. In order to confirm the number of the substrates entering and leaving the substrate storage unit, a sensor capable of detecting the distance, i.e., the basic position sensor 101, is installed at the entrance side of the storage unit, and the number of the corresponding loading unit can be confirmed according to the height of each substrate measured.

[0045] In the first aspect of the present invention, as a preferred embodiment, the upper and lower sides of the component placement assembly 30 are respectively provided with an upper reflector 35 and a lower reflector 34. The reflector is a device for confirming the substrate position determination device, and is a device for determining whether the substrate is placed in the correct position when the substrate is loaded inside the storage unit. When out of position, the main control device of the side control assembly No. 90 will light up a red light to prevent damage to the substrate.

[0046] In the first aspect of the present invention, as a preferred embodiment, the component placement assembly 30 is provided with a placement cavity 31 , and side observation windows 311 are provided on both sides of the placement cavity 31 .

[0047] Specifically, the lower part of the lower housing assembly 20 is provided with a roller 21 and an adjustment foot 22. By adjusting the temperature and pressure of the nitrogen (N2) gas, the humidity inside the storage unit can be adjusted and the pollutants can be effectively discharged. The air flow of the amplifier is adjusted to identify the internal and external pressure difference, and the temperature, pressure, temperature, humidity, etc. associated with it are recorded in the internal storage device, which can be used for engineering analysis and real-time transmission.

[0048] The above-mentioned embodiments are only preferred embodiments of the present invention and cannot be used to limit the scope of protection of the present invention. Any non-substantial changes and substitutions made by technicians in this field on the basis of the present invention shall fall within the scope of protection required by the present invention.

Claims

1. A semiconductor device manufacturing mechanism for preventing residual polluted gas from corroding a substrate, characterized in that: It includes an upper shell component, a lower shell component, a component placement component, a nitrogen supply component, and an exhaust gas exhaust component. The component placement component has an opening on one side and is located in the upper shell component. The component placement component is provided with a plug-in board for placing semiconductor components. The nitrogen supply assembly includes a nitrogen source connecting pipe, a constant pressure regulating device, a purifier, an electric switch device, a heating pipe assembly, an upper connecting branch pipe, and an injection assembly connected in sequence, the injection assembly is inserted into the component placement assembly, and the injection assembly is provided with a plurality of uniformly distributed injection holes along the portion of the component placement assembly; The exhaust gas discharge component includes an upper connecting cavity, an exhaust amplification component, and a lower exhaust pipeline. The upper connecting cavity is connected to the component placement component and is used to discharge the exhaust gas. The exhaust amplification component is respectively connected to the upper connecting cavity and the lower exhaust pipeline. An air supply fan is arranged on the exhaust amplification component.

2. The semiconductor device manufacturing mechanism for preventing residual polluted gas from corroding the substrate as claimed in claim 1, characterized in that: The plug-in board is divided into an inner plug-in board and two side plug-in boards, and the two side plug-in boards are arranged on both sides of the inner plug-in board.

3. The semiconductor device manufacturing mechanism for preventing residual polluted gas from corroding the substrate as claimed in claim 2, characterized in that: The inner plug-in board and the side plug-in board are both provided with a plurality of plug-in slots.

4. The semiconductor device manufacturing mechanism for preventing residual polluted gas from corroding the substrate as claimed in claim 1, characterized in that: The semiconductor element manufacturing mechanism for preventing residual polluted gas from corroding the substrate also includes a side control component.

5. The semiconductor device manufacturing mechanism for preventing residual polluted gas from corroding the substrate as claimed in claim 1, characterized in that: The upper connecting cavity is fan-shaped, and the large end of the upper connecting cavity is communicated with the component placement assembly.

6. The semiconductor device manufacturing mechanism for preventing residual polluted gas from corroding the substrate as claimed in claim 5, characterized in that: The upper connecting cavity is provided with a gas humidity measuring device and a pressure difference measuring device.

7. The semiconductor device manufacturing mechanism for preventing residual polluted gas from corroding the substrate as claimed in claim 6, characterized in that: The exhaust amplification component is provided with an air supply fan, and the exhaust amplification component is provided with an arc-shaped channel along the length direction for amplification by utilizing the Coanda effect.

8. The semiconductor device manufacturing mechanism for preventing residual polluted gas from corroding the substrate as claimed in claim 1, characterized in that: A basic position sensor is disposed on the top of the upper housing assembly.

9. The semiconductor device manufacturing mechanism for preventing residual polluted gas from corroding the substrate as claimed in claim 8, characterized in that: An upper reflector and a lower reflector are respectively arranged on the upper and lower sides of the component placement assembly.

10. The semiconductor device manufacturing mechanism for preventing residual polluted gas from corroding the substrate as claimed in claim 1, characterized in that: The component placement assembly is provided with a placement cavity, and side observation windows are provided on both sides of the placement cavity.

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