Die bonding apparatus and die bonding method using the same

Abstract

A die bonding apparatus and a die bonding method are provided. A wafer having a hydrophilic pattern applied thereon is provided to a die mount having a first magnetic pattern formed thereon, and a hydrophobic pattern is applied around the hydrophilic pattern. Liquid is dispensed to the die mount. A first die having a second magnetic pattern formed thereon is disposed on the wafer, and a first alignment is performed on the first die using a capillary force of the liquid. Liquid is dispensed onto an upper surface of the first die. A second die is disposed on an upper surface of the first die, and first alignment is performed on the second die with capillary force of liquid on the upper surface of the first die. A magnetic field is generated in the first magnetic pattern and the second magnetic pattern, and the first magnetic pattern and the second magnetic pattern are second aligned with a magnetic force.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims the priority of Korean Patent Application No. 10-2023-0146826 filed in the Korean Intellectual Property Office on October 30, 2023, the disclosure of which is incorporated herein by reference in its entirety. Technical Field

[0003] The present disclosure relates to die bonding, and more particularly, to a die bonding apparatus and a die bonding method using the die bonding apparatus. Background Art

[0004] Semiconductor devices are typically packaged after being manufactured to provide protection for the semiconductor devices and to simplify their incorporation into various electronic devices. Modern semiconductor device packaging techniques can incorporate multiple semiconductor devices into fewer packages to save space, save power, and improve performance. One method that has been used is to stack multiple semiconductor devices on top of each other. These techniques have been referred to as 3D packaging.

[0005] Die-to-wafer and die-to-die bonding technologies have become prominent as next-generation packaging technologies to achieve high-density interconnects in the field of 3D packaging.

[0006] When placing these increasingly smaller semiconductor dies into a stack, proper die alignment becomes an important but potentially challenging task. Current die alignment techniques are based on optical vision, and visible light range illumination and general cameras are used for die alignment. However, using these vision-based methods for die alignment can result in alignment errors, especially as the stack of dies becomes taller, because the growing height of the stack requires the camera system to be able to focus on the die at different focal lengths.

[0007] Die alignment techniques using optical vision may not be suitable for dies having circuit line width pitches equal to or less than about 1 μm, and in such cases, alignment may be slow and prone to error. Summary of the invention

[0008] A die bonding device includes a wafer rack that supplies a wafer on which a hydrophilic pattern is applied to a die placement portion on which a first magnetic pattern is formed and a hydrophobic pattern is applied around the hydrophilic pattern. The die rack supplies a die on which a second magnetic pattern connected to the first magnetic pattern of the die placement portion is formed. A die transfer actuator moves a first die and places it from the die rack on the wafer, or places a second die on the first die set on the wafer. A liquid dispenser supplies liquid to the die placement portion of the wafer or the upper surface of the first die to first align the first die on the wafer or first align the second die on the first die by capillary force. A magnet device generates a magnetic field by magnetic force, which causes a second alignment between the first magnetic pattern and the second magnetic pattern.

[0009] A die bonding method using a die bonding device including a wafer rack, a liquid dispenser, a die conveyor and a magnet device includes: supplying a wafer by using a wafer rack, wherein a hydrophilic pattern is applied to a die placement portion on which a first magnetic pattern is formed, and a hydrophobic pattern is applied around the hydrophilic pattern; dispensing liquid to the die placement portion by using a liquid dispenser; placing a first die on which a second magnetic pattern connected to the first magnetic pattern is formed on the wafer by using a die conveyor, and performing a first alignment of the first die by using a capillary force of the liquid; dispensing liquid onto an upper surface of the first die by using a liquid dispenser; placing a second die on the upper surface of the first die by using a die conveyor, and performing a first alignment of the second die by using a capillary force of the liquid on the upper surface of the first die; and generating a magnetic field in the first magnetic pattern and the second magnetic pattern by using a magnet device, and performing a second alignment of the first magnetic pattern and the second magnetic pattern by using a magnetic force.

[0010] A die bonding method includes: providing a wafer on which a hydrophilic pattern is applied to a die placement portion on which a first magnetic pattern is formed, and a hydrophobic pattern is applied around the hydrophilic pattern. Liquid is dispensed to the die placement portion. A first die on which a second magnetic pattern connected to the first magnetic pattern is formed is placed on the wafer, and the first die is first aligned using the capillary force of the liquid. Liquid is dispensed onto the upper surface of the first die. A second die is placed on the upper surface of the first die, and the second die is first aligned using the capillary force of the liquid on the upper surface of the first die. A magnetic field is generated in the first magnetic pattern and the second magnetic pattern, and the first magnetic pattern and the second magnetic pattern are second aligned using the magnetic force.

[0011] A die bonding method includes: providing a wafer on which a hydrophilic pattern is applied to a die placement portion on which a first magnetic pattern is formed, and a hydrophobic pattern is applied around the hydrophilic pattern. Liquid is dispensed to the die placement portion. A first die on which a second magnetic pattern connected to the first magnetic pattern is formed is placed on the wafer, and the first die is first aligned using the capillary force of the liquid. A magnetic field is generated in the first magnetic pattern and the second magnetic pattern, and the first magnetic pattern and the second magnetic pattern are second aligned using the magnetic force. Liquid is dispensed onto the upper surface of the first die. The second die is placed on the upper surface of the first die, and the capillary force of the liquid on the upper surface of the first die is used to first align the second die. A magnetic field is generated in the first die and the second die, and the first die and the second die are second aligned using the magnetic force. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] A more complete understanding of the present disclosure and its many attendant aspects will be readily obtained as the disclosure and its many attendant aspects become better understood by reference to the following detailed description when considered in conjunction with the accompanying drawings, in which:

[0013] Figure 1 is a schematic perspective view of a die bonding apparatus according to an embodiment of the inventive concept;

[0014] Figure 2 It is shown Figure 1 Schematic diagram of a hydrophilic pattern and a hydrophobic pattern on a wafer of a die bonding device;

[0015] Figure 3 is along Figure 2 Cross-sectional view along the A-A' direction;

[0016] Figure 4 is a schematic cross-sectional view of a magnetic field providing chamber of a die bonding apparatus according to an embodiment of the inventive concept;

[0017] Figure 5 is a schematic cross-sectional view of a magnet device of a die bonding apparatus according to an embodiment of the inventive concept;

[0018] Figure 6 is a schematic cross-sectional view of a bonding pressurizing device of a die bonding apparatus according to an embodiment of the inventive concept;

[0019] Figure 7 is a flow chart of a die bonding method according to an embodiment of the inventive concept;

[0020] FIG. 8A to FIG. 8G It is shown Figure 7 A schematic diagram of a die bonding method;

[0021] Fig. 9is a flow chart of a die bonding method according to an embodiment of the inventive concept; and

[0022] FIG. 10A to FIG. 10D It is shown Fig. 9 Schematic diagram of the die bonding method. DETAILED DESCRIPTION

[0023] Hereinafter, embodiments of the present inventive concept will be described in detail with reference to the accompanying drawings.

[0024] The embodiments of the present invention's concept may be modified to other forms, and are provided so that the present disclosure will be thorough and complete, and will fully convey the scope of the present invention to those of ordinary skill in the art. Although each figure drawn to scale may represent one or more specific embodiments of the present disclosure, so that relative lengths, thicknesses, and angles can be inferred therefrom, it should be understood that the present invention is not necessarily limited to the relative lengths, thicknesses, and angles shown. These values ​​may be changed within the spirit and scope of the present disclosure, for example, to allow manufacturing restrictions, etc. Throughout the specification and the accompanying drawings, the same reference numerals may represent the same elements.

[0025] In the concept of the present invention, the meaning of "connection" of a component to another component includes an indirect connection through another element as well as a direct connection between two components. In addition, in some cases, the meaning of "connection" includes all "electrical connections".

[0026] It is understood that when an element is mentioned together with "first" and "second", the element need not be limited thereby. They can be used to distinguish the element from other elements, and may not limit the order or importance of the elements. In some cases, the first element may be referred to as the second element without departing from the scope of the claims set forth herein. Similarly, the second element may also be referred to as the first element.

[0027] Unless otherwise specified, singular terms may include plural forms.

[0028] Figure 1 is a schematic perspective view of a die bonding apparatus according to an embodiment of the inventive concept.

[0029] Reference Figure 1 , a die bonding apparatus 1 according to an embodiment of the inventive concept includes a wafer rack 20 , a die conveyor 40 , a die transfer actuator 60 , a liquid dispenser 65 , and a magnet device 80 .

[0030] The die bonding apparatus 1 is an apparatus for placing a die D on a wafer W used in a wafer packaging process and aligning the wafer W with the die D. In addition, in order to stack the die D in multiple layers to achieve high-density interconnection, the die bonding apparatus 1 places one die D on another die D and aligns the respective die D. The bonding between the wafer W and the die D may be referred to as wafer-to-die bonding, and the bonding between the die D and the die D may be referred to as die-to-die bonding.

[0031] The wafer rack 20 provides a wafer W, and the die conveyor 40 supplies the die D attached to the wafer W. The wafer rack 20 is Figure 1 The rotatable frame is shown in the figure, but it is not necessarily limited to this.

[0032] In addition, Figure 1 In the embodiment of the present invention, the die conveyor 40 is shown in the form of a conveyor belt, but is not necessarily limited thereto. For example, a semiconductor waffle pack for supplying the die D may also be used as the die conveyor 40.

[0033] The die transfer actuator 60 is not necessarily limited to a specific shape as long as it can pick up the die D from the die conveyor 40 , move the die D over the wafer W, and place the die D downward.

[0034] The liquid dispenser 65 discharges liquid (e.g., water or functional liquid) to drop on the wafer W, thereby allowing the wafer W and the die D or the die D and the die D to be aligned by capillary force. In the present inventive concept, the alignment by the capillary force of the liquid L is referred to as the first alignment, and since alignment at the micrometer (μm) level can be performed, it can be referred to as a coarse alignment.

[0035] In the present inventive concept, the die D combined with the wafer W is referred to as a first die 42, and the die stacked on the die D is referred to as a second die 44. More layers of dies may be stacked on the second die 44 according to design.

[0036] The liquid dispenser 65 of the present embodiment is shown to be combined and integrated with the die transfer actuator 60 , but the liquid may be dispensed by the liquid dispenser 65 separate from the die transfer actuator 60 .

[0037] The magnet device 80 is a device that generates a magnetic field in its environment. Figure 1 In the embodiment of the present invention, the magnet device 80 supplies a magnetic field generating a magnetic force to a magnetic pattern pre-set on the wafer W and the die D to achieve ultra-fine alignment. When alignment is performed using a magnetic field, nanometer-level alignment can be performed, which may be referred to as fine alignment.

[0038] For example, the magnet device 80 may be a magnetic field generating chamber 82. Permanent magnets or electromagnets 84 and 86 having different polarities may be disposed at the upper and lower portions of the magnetic field generating chamber 82 to supply a magnetic field to the first aligned wafer W and the first die 42 or the first die 42 and the second die 44 in a direction substantially perpendicular to a base plate on which the die bonding apparatus is mounted.

[0039] The first aligned wafer W for wafer-to-die bonding and die-to-die bonding in the wafer rack 20 may be transferred by the wafer transfer tool 50 and accommodated in the magnetic field generating chamber 82 .

[0040] Figure 2 It is shown Figure 1 Schematic diagram of a hydrophilic pattern and a hydrophobic pattern on a wafer of a die bonding device, and Figure 3 is along Figure 2 Cross-sectional view along the A-A' direction. Figure 3 A first die 42 and a second die 44 are shown being stacked.

[0041] Reference Figure 2 and Figure 3 In order to perform wafer-to-die bonding and die-to-die bonding in the die bonding apparatus 1 of the present inventive concept, the wafer W and the die D are pre-processed.

[0042] The wafer W provided to the wafer rack 20 is formed with a die seating portion 22 on which a first die 42 is seated. A hydrophilic pattern 24 is applied to the die seating portion 22 to match the shape of the die, and a hydrophobic pattern 26 is applied around the die seating portion 22.

[0043] The first magnetic pattern 25 is disposed on the die seating portion 22 of the wafer W, and the hydrophilic pattern 24 is applied on the upper portion of the first magnetic pattern 25. The hydrophobic pattern 26 is applied around the hydrophilic pattern 24 so that the first die 42 is stacked on the hydrophilic pattern 24.

[0044] The liquid L from the liquid dispenser is dispensed into the hydrophilic pattern 24 of the wafer W. The liquid dispenser 65 controls the precise discharge amount and position of the liquid L, and thus, a precise liquid dispenser 65 can be used.

[0045] The liquid L used in the die bonding apparatus 1 of the present inventive concept may be water that generates capillary force, or may be a functional liquid that removes a natural oxide film present on the wiring pads and magnetic patterns of the die D or reacts with a dielectric surface to form a silanol group (Si—OH).

[0046] The first die 42 is stacked on the liquid L on the hydrophilic pattern 24. Here, the first die 42 is formed with the second magnetic pattern 45 connected to the first magnetic pattern 25 in the die seating portion 22 of the wafer W. The die transfer actuator 60 stacks the first die 42 from the die conveyor 40 of the die bonding apparatus 1 on the wafer W. Here, when the first die 42 is stacked on the wafer W, the capillary force of the liquid L causes a rough alignment, such as a first alignment.

[0047] In addition, the liquid dispenser 65 supplies the liquid L to the upper surface 42U of the first die 42 again, and when the second die 44 is stacked on the first die 42, the capillary force of the liquid L causes a rough alignment, such as a first alignment. In die-to-die bonding, a hydrophilic pattern may also be formed on the upper surface 42U of the first die 42, and the first alignment is performed by the shape of the die due to the same shape of the first die 42 and the second die 44. Here, the wafer-to-die and die-to-die first alignment has an accuracy ranging from hundreds of nm to several μm.

[0048] While maintaining the accuracy of the first alignment, the fine alignment of the wafer to the die, the die to the die, and the die to the die are attracted by the patterned magnetic material by applying a magnetic field between the first magnetic pattern 25 and the second magnetic pattern 45 using an electromagnet or a permanent magnet, such as a second alignment. Here, the second alignment of the wafer to the die and the die to the die has an accuracy of tens of nanometers (nm). The strength of the magnetic field can have a large value, by which the magnetic material of the magnetic pattern within the die can reach a magnetic saturation value.

[0049] The magnetic material used in the first magnetic pattern 25 and the second magnetic pattern 45 is configured to easily change the direction of its spin by a magnetic field, and exhibits a strong magnetic force even when thin and small in volume, and therefore, the magnetic material has a high magnetic permeability and a saturation magnetization value. Therefore, among the magnetic materials, a soft magnetic material having a low coercive force and a high saturation magnetization value may be suitable. The soft magnetic material may include Fe65-70Co30-35, Permalloy (Ni60-80Fe40-20), soft-ferrite, and / or FePSi.

[0050] Soft magnetic materials can be deposited by electroplating, sputtering, electron beam deposition, thermal evaporation, etc., so they are suitable for patterning by deposition or etching. In addition, since these magnetic materials tend to lose their ferromagnetism according to the composition and phase change of the alloy, they can be oxidation-resistant and stable materials that do not undergo phase change according to the heat treatment temperature during the process.

[0051] The magnet arrangement 80 providing the magnetic force for causing the second alignment is implemented in the following embodiment.

[0052] Figure 4 is a schematic cross-sectional view of a magnetic field providing chamber of a die bonding apparatus according to an embodiment of the inventive concept, and Figure 5 is a magnet device of a die bonding apparatus according to an embodiment of the inventive concept.

[0053] The magnet device 80 is a device that generates a magnetic field. Figure 4 In the embodiment, as mentioned above with reference to Figure 1 As described, the magnet device 80 may be a magnetic field generating chamber 82 into which a first aligned wafer is transferred to be accommodated after causing a first alignment from the wafer holder 20 by the capillary force of the liquid L for wafer-to-die bonding and die-to-die bonding.

[0054] Magnets 84 and 86 having different polarities are disposed at the upper and lower portions of the magnetic field generating chamber 82 to supply a magnetic field to the first aligned wafer W and the first die 42 or the first die 42 and the second die 44 in a direction substantially perpendicular to a base plate on which the die bonding apparatus is mounted.

[0055] In the present embodiment, although only one magnetic field generating chamber 82 is shown, a plurality of magnetic field generating chambers may be configured to simultaneously perform the wafer-to-die and die-to-die second alignments in order to perform the operations at a faster speed.

[0056] Figure 5 The magnet device 80 of the embodiment generates magnetic force using an electromagnet and can be combined and integrated with the die transfer actuator 60. In addition, the liquid dispenser 65 for generating capillary force can also be combined with the die transfer actuator 60 to form one module.

[0057] exist Figure 5 In the embodiment of, after the first die 42 is first aligned on the wafer W, a magnetic field may be first applied to perform the second alignment. After the liquid L is dispensed onto the upper surface 42U of the first die 42 on the second aligned wafer W, the second die 44 may be mounted, and then, a magnetic field for the second alignment may be applied again to perform die-to-die bonding. In addition, after the first die 42 is first aligned on the wafer W and the second die 44 is first aligned on the first die 42, a magnetic field may be applied, and after a plurality of dies are mounted and first aligned, a magnetic field may be applied.

[0058] Figure 6 is a schematic cross-sectional view of a bonding pressurizing device of a die bonding apparatus according to an embodiment of the inventive concept.

[0059] Reference Figure 6 The die bonding apparatus 1 according to the inventive concept may further include a pressurizer 70 .

[0060] The pressurizer 70 may pressurize the uppermost die for the second alignment to dry the liquid while applying the magnetic field for the second alignment to the wafer-to-die and the die-to-die. The pressurizer 70 may be elastic rubber, and its head may be rubber.

[0061] Figure 7 is a flow chart of a die bonding method according to an embodiment of the inventive concept, and FIG. 8A to FIG. 8G It is shown Figure 7 Schematic diagram of the die bonding method.

[0062] Reference Figure 7 and FIG. 8A to FIG. 8G , a die bonding method according to an embodiment of the inventive concept may be adapted using the above-mentioned die bonding apparatus.

[0063] First, magnetic patterning is performed on the wafer W (S10, Fig. 8A ). A first magnetic pattern 25 is formed on the die placement portion 22 of the wafer W. After the first magnetic pattern 25 is formed on the wafer W, a hydrophilic pattern 24 is formed in a position where the die D is mounted, and a hydrophobic pattern 26 is applied around the hydrophilic pattern 24 (S12, Figure 8B ).

[0064] After the wafer W is prepared, the liquid L is dispensed on the hydrophilic pattern 24 (S14, Figure 8C ). The liquid L dispensed on the wafer W may be water that generates a capillary force, or may be a functional liquid that removes a natural oxide film present on the wiring pads and magnetic patterns of the die D, or reacts with a dielectric surface to form a silanol group (Si—OH).

[0065] After dispensing the liquid L, the first die 42 is mounted (S20, Fig.8D The second magnetic pattern 45 connected to the first magnetic pattern 25 is formed at the die seating portion 22 of the wafer W on the first die 42 .

[0066] Here, the magnetic material used in the first magnetic pattern 25 and the second magnetic pattern 45 is configured to easily change the spin direction by the magnetic field, and exhibits a strong magnetic force even when thin and small in volume, so the magnetic material has a high magnetic permeability and a saturation magnetization value. Therefore, among the magnetic materials, a soft magnetic material with a low coercive force and a high saturation magnetization value may be suitable. The soft magnetic material may include Fe65-70Co30-35, Permalloy (Ni60-80Fe40-20), soft ferrite and / or FePSi.

[0067] After the first die 42 is mounted on the wafer W, liquid is dispensed again on the upper surface 42U of the first die 42, and then the second die 44 is mounted on the upper portion of the first die 42. Since a plurality of dies can be stacked in this manner, this is referred to as die multi-stacking (S22, Fig. 8E ).

[0068] In this way, water or functional liquid is dripped on the wafer W and the die D, so that the wafer W and the die D or the die D and the die D can be aligned by capillary force. In the present invention, the alignment by the capillary force of the liquid L is called the first alignment, and since the alignment of the micron (μm) level can be achieved, it is called the coarse alignment. Here, the first alignment of the wafer to the die and the die to the die has an accuracy of hundreds of nm to several μm.

[0069] The first aligned wafer W is moved to the magnet device 80, and a magnetic field generating a magnetic force is applied to the first aligned wafer W and the die D to achieve ultra-fine alignment (S40, Figure 8F ). The case where alignment is performed using a magnetic field is called a second alignment, and the second alignment is called a fine alignment because alignment on a nanometer scale can be achieved.

[0070] As an example of the magnet device 80, the magnet device 80 may be a magnetic field generating chamber 82. Permanent magnets or electromagnets 84 and 86 having different polarities may be disposed at the upper and lower portions of the magnetic field generating chamber 82 to supply a magnetic field to the first aligned wafer W and the first die 42 or the first die 42 and the second die 44 in a direction substantially perpendicular to a base plate on which the die bonding apparatus is mounted.

[0071] When the magnetic field is applied, the uppermost die may be pressurized using the pressurizer 70 to dry the liquid L (S40, Figure 8G ). The pressurizer 70 may be elastic rubber, and its head may be rubber.

[0072] Fig. 9 is a flow chart of a die bonding method according to an embodiment of the inventive concept, and FIG. 10A to FIG. 10D It is shown Fig. 9 Schematic diagram of the die bonding method.

[0073] Will refer to Fig. 9 and FIG. 10A to FIG. 10D A die bonding method according to another embodiment of the present invention is described in detail. Fig. 10A The process and FIG. 8A to FIG. 8D The process is the same.

[0074] Thereafter, after the first die 42 is mounted on the wafer W, a magnetic field is provided to the magnet device 80 . Here, the magnet device 80 is shown to be integrated with the die transfer actuator 60 .

[0075] In addition, the liquid dispenser 65 for generating capillary force may also be combined with the die transfer actuator 60 to form one module.

[0076] After the first die 42 is first aligned on the wafer W, a second alignment may be first performed by applying a magnetic field (S24, Fig. 10A and Fig. 10B ).

[0077] Thereafter, the liquid L is dispensed onto the upper surface 42U of the first die 42 on the second aligned wafer W, and then the second die 44 is mounted (S26, Fig. 10C After the second die 44 is mounted, die-to-die bonding may be performed by applying a magnetic field for a second alignment (S28, Fig. 10D ).

[0078] Can be repeated Fig. 10C and Fig. 10D The multiple stacking is performed by a process, and when the second alignment is performed by providing a magnetic force, drying can be performed by pressing with a pressurizer.

[0079] According to the die bonding apparatus and the die bonding method using the die bonding apparatus conceived by the present invention, ultra-precise wafer-to-die and die-to-die alignment can be achieved using capillary force and magnetic force, and not only equipment costs but also bonding time and production cycle time can be reduced.

[0080] Although embodiments have been shown and described above, it will be apparent to those skilled in the art that modifications and variations may be made without departing from the scope of the inventive concept.

Claims

1. A die bonding method using a die bonding device including a wafer rack, a liquid dispenser, a die conveyor and a magnet device, the die bonding method comprising: supplying a wafer by using the wafer rack, wherein on the wafer, a hydrophilic pattern is applied to a die seating portion on which a first magnetic pattern is formed, and a hydrophobic pattern is applied around the hydrophilic pattern; dispensing liquid to the die seating portion by using the liquid dispenser; placing a first die on which a second magnetic pattern connected to the first magnetic pattern is formed on the wafer by using the die conveyor, and first aligning the first die by using a capillary force of the liquid; dispensing liquid onto an upper surface of the first die by utilizing the liquid dispenser; placing a second die on an upper surface of the first die by using the die transferor, and first aligning the second die by using a capillary force of a liquid on the upper surface of the first die; and By using the magnet device, a magnetic field is generated in the first magnetic pattern and the second magnetic pattern, and the first magnetic pattern and the second magnetic pattern are second-aligned using a magnetic force.

2. The die bonding method according to claim 1, wherein: The liquid dispenser is integrally combined with a die transfer actuator.

3. The die bonding method according to claim 1, wherein: In the second alignment, the magnet device supplies a magnetic field to the wafer and the first die or the first die and the second die of the first alignment in a direction substantially perpendicular to a base plate on which the die bonding device is mounted.

4. The die bonding method according to claim 3, wherein: The die bonding apparatus further comprises a wafer transfer tool, the wafer transfer tool moving the first aligned wafer to the magnet apparatus, Wherein, the magnet device is a magnetic field generating chamber, and the magnetic field generating chamber accommodates the first aligned wafer moved from the wafer transfer tool.

5. The die bonding method according to claim 3, wherein: The magnet arrangement is integrally combined with a die transfer actuator.

6. The die bonding method according to claim 1, wherein: The liquid generating the capillary force includes water or a functional liquid that reacts with the dielectric surface to form a silanol group (Si—OH).

7. The die bonding method according to claim 1, wherein: The first magnetic pattern or the second magnetic pattern is a soft magnetic material, and includes Fe65-70Co30-35, Permalloy (Ni60-80Fe40-20), soft ferrite and / or FePSi.

8. The die bonding method according to claim 1, wherein: The die bonding apparatus further includes a pressurizer that pressurizes the second-aligned uppermost die.

9. The die bonding method according to claim 8, wherein: The pressurizer includes a rubber head.

10. A die bonding method, comprising: providing a wafer, wherein on the wafer, a hydrophilic pattern is applied to a die seating portion on which a first magnetic pattern is formed, and a hydrophobic pattern is applied around the hydrophilic pattern; dispensing a liquid to the die placement portion; placing a first die having a second magnetic pattern connected to the first magnetic pattern formed thereon on the wafer, and performing a first alignment on the first die by using the capillary force of the liquid; dispensing a liquid onto an upper surface of the first die; placing a second die on the upper surface of the first die, and first aligning the second die using a capillary force of a liquid on the upper surface of the first die; and A magnetic field is generated in the first magnetic pattern and the second magnetic pattern, and the first magnetic pattern and the second magnetic pattern are second-aligned using a magnetic force.

11. The die bonding method according to claim 10, wherein: In the second alignment, a magnetic field is supplied to the wafer and the first die or the first die and the second die of the first alignment in a direction substantially perpendicular to a base plate on which the die bonding device is mounted.

12. The die bonding method according to claim 10, wherein: The liquid generating the capillary force includes water or a functional liquid that reacts with a dielectric surface to form a silanol group (Si—OH).

13. The die bonding method according to claim 10, wherein: The first magnetic material or the second magnetic material is a soft magnetic material and includes Fe65-70Co30-35, Permalloy (Ni60-80Fe40-20), soft ferrite and / or FePSi.

14. The die bonding method according to claim 10, wherein: In the second alignment, the liquid between the wafer and the first die and between the first die and the second die is dried.

15. The die bonding method according to claim 14, wherein: As the liquid dries, the upper surface of the uppermost die is pressurized.

16. A die bonding method, comprising: providing a wafer, wherein on the wafer, a hydrophilic pattern is applied to a die seating portion on which a first magnetic pattern is formed, and a hydrophobic pattern is applied around the hydrophilic pattern; dispensing a liquid to the die placement portion; placing a first die having a second magnetic pattern connected to the first magnetic pattern formed thereon on the wafer, and performing a first alignment on the first die by using the capillary force of the liquid; generating a magnetic field in the first magnetic pattern and the second magnetic pattern, and performing a second alignment on the first magnetic pattern and the second magnetic pattern by using a magnetic force; dispensing a liquid onto an upper surface of the first die; placing a second die on the upper surface of the first die, and first aligning the second die using a capillary force of a liquid on the upper surface of the first die; and A magnetic field is generated in the first die and the second die, and the first die and the second die are second-aligned using a magnetic force.

17. The die bonding method according to claim 16, wherein: In the second alignment, a magnetic field is applied to the wafer and the first die or the first die and the second die of the first alignment in a direction substantially perpendicular to a base plate on which the die bonding device is mounted.

18. The die bonding method according to claim 16, wherein: The liquid generating the capillary force includes water or a functional liquid that reacts with the dielectric surface to form a silanol group (Si—OH).

19. The die bonding method according to claim 16, wherein: The first magnetic material or the second magnetic material is a soft magnetic material and includes Fe65-70Co30-35, Permalloy (Ni60-80Fe40-20), soft ferrite and / or FePSi.

20. The die bonding method according to claim 16, wherein: In the second alignment, the liquid between the wafer and the first die and between the first die and the second die is dried, and the upper surface of the uppermost die is pressurized.

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