Chip packaging structure and semiconductor device

Abstract

The invention relates to the technical field of semiconductors, and discloses a chip packaging structure and a semiconductor device. The packaging structure of the chip comprises a cathode electrode and a dynamic voltage-sharing module, the cathode electrode is stacked on the chip, and the cathode electrode is divided into a plurality of pressure compensation areas; the dynamic voltage-sharing module is arranged on one side, deviating from the chip, of the cathode electrode and is provided with a closed cavity, the closed cavity is filled with an elastic buffer substance, a plurality of dynamic insertion electrodes electrically connected with the plurality of pressure compensation areas are arranged in the closed cavity, and the outer end part of the dynamic voltage-sharing module is electrically connected with the cathode of the external tube shell in a sealing manner. When the technical scheme of the invention is adopted to package the chip and the tube shell, the dynamic pressure equalizing module with the closed cavity is arranged on the cathode electrode, the buffer substance in the closed cavity can be utilized to realize pressure compensation in the chip packaging process, dynamic pressure adjustment is carried out, and the pressure between the metal electrodes is equalized.

Description

Technical Field

[0001] The present application belongs to the field of semiconductor technology, and specifically relates to a chip packaging structure and a semiconductor device. Background Art

[0002] As the core component of power transmission equipment, high-power semiconductor devices need to withstand high voltage and high current working environments in practical applications. With the continuous improvement of equipment capacity, the power level of devices is also getting larger and larger, which leads to the increasing size of electrodes and heat sinks of semiconductor devices; therefore, the crimping effect of large-size contact surfaces has become a key constraint affecting the heat dissipation and flow improvement of devices. However, for the surfaces of common semiconductor devices in the prior art, there are usually different degrees of crimping unevenness during the crimping process. In severe cases, the degree of unevenness can exceed 80%. Therefore, crimping unevenness is not conducive to the long-term use reliability of semiconductor devices. In addition, the crimping uniformity can be improved by improving the flatness of the contact surface between the packaged components and the heat sink, but this method will undoubtedly greatly increase the packaging cost, and the upper limit is low; therefore, it is urgent to develop a pressure equalization structure to improve the crimping uniformity of semiconductor devices. Summary of the invention

[0003] The purpose of the present application is to provide a chip packaging structure and a semiconductor device to achieve pressure compensation on the chip surface and improve the uniformity of the pressing of the semiconductor device.

[0004] In order to achieve the above-mentioned object, the present application provides a chip packaging structure on one hand, and the chip packaging structure includes: A cathode electrode is stacked on the chip and electrically connected to the chip, and the cathode electrode is divided into a plurality of pressure compensation areas; The dynamic pressure equalizing module is arranged on the side of the cathode electrode away from the chip and has a closed cavity. The closed cavity is filled with elastic buffer material. A plurality of dynamic insertion electrodes are arranged in the closed cavity and are electrically connected to a plurality of pressure compensation areas in a one-to-one correspondence. The outer end of the dynamic pressure equalizing module is electrically connected to the cathode seal of the external tube shell.

[0005] In some embodiments, the pressure compensation area is an annular structure, and a plurality of pressure compensation areas are arranged in sequence along the radial direction.

[0006] In some embodiments, the pressure compensation region is a fan-shaped structure, and the number of pressure compensation regions of the fan-shaped structure is multiple and symmetrically distributed, and the multiple pressure compensation regions are combined into a disc-shaped structure.

[0007] In some embodiments, the dynamic pressure equalization module includes: A conductive gasket is located on a side of the cathode electrode facing away from the chip, the side of the conductive gasket facing away from the chip is open, and the dynamic insertion electrode is electrically connected to the pressure compensation area through the conductive gasket; The metal plate is sealed at the open portion. The metal plate and the conductive gasket cooperate to form a closed cavity. The surface of the metal plate on one side away from the closed cavity is in contact with the external heat sink.

[0008] In some embodiments, the conductive gasket includes a bottom surface and a side surface enclosed by the outer periphery of the bottom surface, a plurality of dynamic insertion electrodes are in contact with the bottom surface, and an outer end portion of the side surface extends toward a side away from the closed cavity with a conductive connection portion, and the conductive connection portion is electrically connected to the cathode seal of the external tube shell.

[0009] In some embodiments, the number of dynamic insertion electrodes is the same as the number of pressure compensation regions and are arranged in a one-to-one correspondence, and the radial cross-sectional area of ​​each dynamic insertion electrode is equal to the radial cross-sectional area of ​​each pressure compensation region.

[0010] In some embodiments, a stopper is provided between any two adjacent dynamic insertion electrodes, and a stopper is also provided between the outermost dynamic insertion electrode and the side surface.

[0011] In some embodiments, the limit block is made of high temperature resistant and wear resistant material.

[0012] In some embodiments, the elastic buffer material is high voltage insulating gas or silicone rubber.

[0013] A second aspect of the present application provides a semiconductor device, the semiconductor device comprising: The chip packaging structure as described above; and The tube shell is provided with a tube shell cathode and a tube shell anode, the tube shell cathode is electrically connected to the conductive gasket of the dynamic voltage balancing module, and the tube shell anode is electrically connected to the anode electrode.

[0014] In some embodiments, a stepped structure is provided on the periphery of the tube shell cathode, and the conductive gasket of the dynamic voltage balancing module has a conductive connecting portion extending outward, and the conductive connecting portion is sealed and connected to the stepped structure.

[0015] In some embodiments, the metal plate of the dynamic pressure equalization module and the stepped structure of the tube shell cathode are sealed and connected by a brazing process.

[0016] Through the above technical solution, the chip packaging structure and semiconductor device provided by the embodiment of the present application have the following beneficial effects: The packaging structure of the chip includes a cathode electrode and a dynamic pressure equalizing module; the cathode electrode is stacked on the chip, and the cathode electrode is divided into multiple pressure compensation areas; the dynamic pressure equalizing module is arranged on the side of the cathode electrode away from the chip and has a closed cavity, the closed cavity is filled with elastic buffer material, and multiple dynamic insertion electrodes electrically connected to multiple pressure compensation areas are arranged in the closed cavity, and the outer end of the dynamic pressure equalizing module is electrically connected to the external tube shell cathode seal. The present application adds a dynamic pressure equalizing module with a closed cavity to the cathode electrode, and multiple dynamic insertion electrodes in the dynamic pressure equalizing module are electrically connected to the pressure compensation area, and elastic buffer material is filled in the closed cavity. Compared with a rigid connection, when the chip is crimped, the elastic buffer structure in the entire dynamic pressure equalizing module can compensate for the pressure during the chip crimping process and improve the pressure uniformity.

[0017] Other features and advantages of the embodiments of the present application will be described in detail in the subsequent detailed description. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] The accompanying drawings are used to provide a further understanding of the embodiments of the present application and constitute a part of the specification. Together with the following specific embodiments, they are used to explain the embodiments of the present application, but do not constitute a limitation on the embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on the structures shown in these drawings without creative work. In the drawings: Figure 1 A schematic diagram of a packaging structure of a semiconductor device in the prior art; Figure 2 This is a schematic diagram of the structure of the chip of this application; Figure 3 A schematic diagram of the chip packaging structure of the present application; Figure 4 This is a schematic structural diagram of the cathode electrode in the chip packaging structure in the first embodiment of the present application; Figure 5 This is a schematic structural diagram of a cathode electrode in a chip packaging structure in a second embodiment of the present application; Figure 6 It is a partial schematic diagram of the packaging structure of the semiconductor device of the present application.

[0019] Description of Reference Numerals 100, chip; 22, conductive gasket; 101, cathode electrode; 221, bottom surface; 1011, pressure compensation area; 222, side surface; 102, tube shell cathode; 223, conductive connection part; 103, tube shell anode; 23, closed cavity; 104, anode electrode; 24, dynamic insertion electrode; 200, dynamic equalizing voltage module; 25, limit block; 21, metal plate; 300, tube shell. DETAILED DESCRIPTION

[0020] The specific implementation of the present application is described in detail below in conjunction with the accompanying drawings. It should be understood that the specific implementation described here is only used to illustrate and explain the present application, and is not used to limit the present application.

[0021] The chip packaging structure and the semiconductor device according to the present application are described below with reference to the accompanying drawings.

[0022] As is known to all, the packaging structure of the press-fit high-power semiconductor device in the prior art is as follows: Figure 1 As shown, the surface of the chip 100 and the metal electrode (usually metal molybdenum or molybdenum alloy), and the metal electrode and the tube shell electrode (for example, metal copper) are usually connected by rigid contact, so the uniformity of the compression joint on the surface of the chip 100 is only achieved by the processing accuracy of the metal electrode. However, the current manufacturing capacity of the processing manufacturer is that the surface flatness of the metal electrode can generally only reach 10-15μm, which can no longer meet the compression packaging requirements of larger-sized devices, and the processing accuracy is unstable, and qualified products need to be screened out; therefore, if the processing progress is increased to within 5μm, the cost will increase sharply, which will greatly affect the economic efficiency of the device, and the processing difficulty is large, and the current processing manufacturers cannot meet the requirements.

[0023] In view of this, the present application provides a dynamic pressure equalization structure, specifically, as Figure 2 The package structure of a chip is shown in FIG. Figure 2 and Figure 3 It can be seen from the structure of the chip 100 shown that the packaging structure of the chip includes a cathode electrode 101 and a dynamic equalizing pressure module 200; the cathode electrode 101 is stacked on the chip 100 and electrically connected to the chip 100, and the cathode electrode 101 is divided into a plurality of pressure compensation areas 1011; the dynamic equalizing pressure module 200 is arranged on the side of the cathode electrode 101 away from the chip 100 and has a closed cavity 23, the closed cavity 23 is filled with elastic buffer material, and a plurality of dynamic insertion electrodes 24 are arranged in the closed cavity 23, which are electrically connected to the plurality of pressure compensation areas 1011 in a one-to-one correspondence, and the outer end of the dynamic equalizing pressure module 200 is sealed and electrically connected to the cathode 102 of the external tube shell.

[0024] In this embodiment, a cathode structure with dynamic pressure compensation is proposed to achieve pressure compensation for the chip 100, thereby improving the uniformity of the chip 100 during the press-fitting process. In the chip 100 assembly process of the semiconductor device, the prior art uses a metal-to-metal hard pressing method to achieve electrical connection, and as the electrode size increases, the processing requirements for the metal electrode become higher and higher, and the difficulty increases. However, the present application adopts an independent small structure composed of a plurality of pressure compensation areas 1011 designed to form the cathode electrode 101 of the chip 100. The independent small structure is easier to process than the entire large structure, so it is easier to achieve consistency in the pressure on the contact surface of the chip 100; and by introducing a new structure on the cathode electrode 101, namely the dynamic equalizing module 200, by forming a closed cavity 23 filled with elastic buffer material inside the dynamic equalizing module 200, and electrically connecting the dynamic insertion electrode 24 inside the closed cavity 23 to the plurality of pressure compensation areas 1011, thereby achieving electrical connection between the dynamic equalizing module 200 and the cathode electrode 101. Since the dynamic pressure equalizing module 200 has a buffer substance inside, when the dynamic pressure equalizing module 200 is connected to the cathode electrode 101, the metal rigid connection mode is avoided. When the chip 100 is packaged with the tube shell 300, due to the presence of the dynamic pressure equalizing module 200 on the cathode electrode 101, the buffer substance inside the closed cavity 23 can be used to achieve pressure compensation for the chip 100 packaging process, and dynamic pressure regulation is performed to even out the pressure between the metal electrodes. In addition, since the cathode electrode 101 of the present application is composed of multiple independent pressure compensation areas 1011, for each pressure compensation area 1011, the pressure between the dynamic pressure equalizing module 200 and the pressure compensation area 1011 is reduced, and the pressure of the small area is easier to compensate. In addition, the cathode electrode 101 can also be called a buffer electrode, which can also play a role in matching the thermal expansion coefficient between the chip 100 and the dynamic insertion electrode 24. Furthermore, by improving the packaging structure of the chip, the overall packaging process is not affected. Compared with the method of improving the uniformity of crimping by changing the packaging process in the prior art, the manufacturing cost of the present application is lower.

[0025] Since the smaller the contact surface of the cathode electrode 101 in contact with the chip 100, the easier it is to process, so that the surface of the chip 100 can be more easily pressure compensated, the cathode electrode 101 of the present application is divided into a plurality of pressure compensation areas 1011. It can be understood that the cathode electrode 101 is composed of a plurality of small regional electrodes, so that the contact area between each electrode area and the chip 100 is much smaller than the contact area between the entire cathode electrode 101 and the chip 100, which can be more conducive to pressure compensation. In this embodiment, the cathode electrode 101 can be a cathode molybdenum sheet, and the cathode electrode 101 is a circular structure. The cathode electrode 101 is partitioned so that the cathode electrode 101 includes a plurality of divided pressure compensation areas 1011. The shape of the pressure compensation area 1011 can be various. Preferably, the shape of the pressure compensation area 1011 can adopt the following two preferred embodiments, which can be designed as a multi-ring or fan-shaped partition structure: In the first embodiment of the present application, Figure 4 As shown, the pressure compensation area 1011 is an annular structure, and multiple pressure compensation areas 1011 are arranged in sequence from the inside to the outside in the radial direction. The ring width of each pressure compensation area 1011 is equal, so that each pressure compensation area 1011 maintains the same pressure on the corresponding area of ​​the chip 100. In this embodiment, the cathode electrode 101 is a multi-ring structure, and the surface of the chip 100 is provided with multiple circles of comb strip components arranged at intervals in the radial direction. Each group of comb strip components includes multiple comb strips arranged at intervals in the circumferential direction. The multi-ring structure can be distributed according to the comb strip structure on the surface of the chip 100. When designing, a circle of comb strip components or adjacent multi-circle comb strip components can share a pressure compensation area 1011. It should be noted that the number of pressure compensation areas 1011 of the annular structure can be one, two or three, etc., all within the protection scope of the present application. The specific number can be determined according to the area of ​​the cathode molybdenum sheet and the processing requirements, and is not limited here.

[0026] In the second embodiment of the present application, Figure 5 As shown, the pressure compensation area 1011 is a fan-shaped structure, and the number of the pressure compensation areas 1011 of the fan-shaped structure is an even number greater than 0, and multiple pressure compensation areas 1011 are symmetrically distributed and combined into a disc-shaped structure. In this embodiment, the sizes of the pressure compensation areas 1011 of the fan-shaped structure are exactly the same, that is, when designing, the cathode molybdenum sheet needs to be divided into even sizes, and the cathode molybdenum sheet can be divided into two, four or six even numbers of fan-shaped pressure compensation areas 1011 to ensure that each pressure compensation area 1011 is exactly the same. When multiple pressure compensation areas 1011 are in contact with the chip 100, the pressure on the chip 100 is equal, thereby improving the pressure uniformity.

[0027] In some embodiments, the dynamic pressure equalizing module 200 includes a conductive gasket 22 and a metal plate 21; the conductive gasket 22 is located on the side of the cathode electrode 101 away from the chip 100, and the side of the conductive gasket 22 away from the chip 100 is open, and the dynamic insertion electrode 24 is electrically connected to the pressure compensation area 1011 through the conductive gasket 22 to achieve stable and reliable electrical lead-out; the metal plate 21 is sealed at the open position, and the metal plate 21 and the conductive gasket 22 cooperate to form a closed cavity 23, and the side surface of the metal plate 21 away from the closed cavity 23 is in contact with the external heat sink to compensate for the heat dissipation capacity of the cathode side of the chip 100; since the surface of the metal plate 21 in this embodiment is a flat plane plate structure, when the metal plate 21 is in contact with the external heat sink, the uniformity of the crimping between the metal plate 21 and the external heat sink can also be improved.

[0028] Among them, the specifications and dimensions of the conductive gasket 22 are designed according to the current requirements of the semiconductor device. The material of the conductive gasket 22 can be a metal with high conductivity and high ductility, such as copper, silver, gold and their alloys, to achieve better conductive performance, and the high-ductility metal can improve the contact uniformity between the dynamic insertion electrode 24 and the pressure compensation area 1011. Compared with the rigid connection between the metal electrodes in the prior art, the pressure uniformity is better.

[0029] In some embodiments, the conductive gasket 22 includes a bottom surface 221 and a side surface 222 enclosed on the periphery of the bottom surface 221. The side surface 222 and the bottom surface 221 cooperate to form a cavity structure with one end open. A plurality of dynamic insertion electrodes 24 are located in the cavity and in contact with the bottom surface 221, thereby achieving electrical conduction of the dynamic insertion electrodes 24. In addition, a conductive connection portion 223 extends from the outer end of the side surface 222 toward the side away from the closed cavity 23, and the conductive connection portion 223 is sealed and electrically connected to the external tube shell cathode 102. By extending the conductive connection portion 223 outward from the side surface 222 of the conductive gasket 22, and by the sealed connection between the conductive connection portion 223 and the tube shell cathode 102, a sealed package between the tube shell 300 and the chip 100 can be achieved.

[0030] In some embodiments, the number of dynamic insertion electrodes 24 is the same as the number of pressure compensation areas 1011 and is arranged one-to-one, and the radial cross-sectional area of ​​each dynamic insertion electrode 24 is equal to the radial cross-sectional area of ​​each pressure compensation area 1011. In this embodiment, since each dynamic insertion electrode 24 is electrically connected to the corresponding pressure compensation area 1011 through the bottom surface 221 of the conductive gasket 22, the electrical connection between the entire dynamic pressure equalization module 200 and the cathode molybdenum sheet can be achieved. In addition, in order to achieve a more stable and reliable electrical connection performance between the two, it is necessary to make the radial cross-sectional area of ​​each insertion electrode equal to the radial cross-sectional area of ​​the corresponding pressure compensation area 1011.

[0031] It should be noted that the dynamic insertion electrode 24 of the present application is a common metal electrode, and its material needs to have a certain rigidity and be able to withstand a certain pressure, such as molybdenum, molybdenum-copper alloy, mold steel and the like.

[0032] In some embodiments, a stopper 25 is provided between any two adjacent dynamic insertion electrodes 24, and each stopper 25 fills the gap between the two adjacent dynamic insertion electrodes 24, so that the stopper 25 on both sides of each dynamic insertion electrode 24 can act simultaneously to clamp the dynamic insertion electrode 24, thereby achieving the limit of each dynamic insertion electrode 24. In addition, a stopper 25 is also provided between the dynamic insertion electrode 24 located at the outermost layer and the side surface 222. In this embodiment, the existence of the stopper 25 not only ensures that the position of each dynamic insertion electrode 24 does not change, but also ensures the accuracy of the alignment of the dynamic insertion electrode 24 with the pressure compensation area 1011.

[0033] In some embodiments, the stopper 25 is made of a high temperature resistant and wear-resistant material. For example, it can be made of a high temperature resistant and wear-resistant material commonly used in the prior art, such as a composite coating material (Al2O3 / Ni), a nano-ceramic material, or a high temperature heat-resistant and wear-resistant steel plate, etc. It can also be made of a high temperature wear-resistant composite material, such as a glass fiber reinforced composite material, a carbon fiber reinforced composite material, etc. In this embodiment, by using a stopper 25 material with good wear resistance, it is possible to prevent the dynamic insertion electrode 24 from causing wear to the stopper 25 during the insertion or extraction movement, and because there is contact between the stopper 25 and the dynamic insertion electrode 24 or the side 222 of the conductive gasket 22, the material with good wear resistance can increase the service life of the stopper 25.

[0034] In some embodiments, the elastic buffer material is a high-voltage insulating gas or a flexible silicone rubber. Among them, the high-voltage insulating gas can be an inert gas such as nitrogen and sulfur hexafluoride commonly used in the prior art, and the pressure of the high-voltage insulating gas is evenly distributed and wraps the dynamic insertion electrode 24. Since the high-voltage insulating gas has a certain pressure, when the dynamic insertion electrode 24 is pressed down, the high-voltage insulating gas is squeezed again, and the gas expands to generate pressure. The pressure is transmitted to the dynamic insertion electrode 24 through the gas, and then transmitted to the chip 100, thereby achieving the role of pressure compensation and improving the uniformity of the chip 100 crimping. In addition, silicone rubber can also be filled in the closed cavity 23. The material of the rubber silicone needs to be resistant to high temperatures (for example, it needs to be able to withstand the brazing temperature of the brazing process of the semiconductor device during the packaging process), and has good elastic deformation ability in the junction temperature range of the semiconductor device (≥125°C), so that the flexible connection of the entire cathode structure and the tube shell cathode 102 can be achieved, and the pressure uniformity between the metal electrodes can be improved. Of course, in other embodiments, the elastic buffer material filled inside the closed cavity 23 is not limited to the two substances mentioned in the present application, but may also be other elastic materials. As long as the material has elastic deformation properties or buffering properties, it is within the protection scope of the present application.

[0035] The chip 100 of the present application is also provided with an anode electrode 104 on the side facing away from the cathode electrode 101, and the anode electrode 104 can be an anode molybdenum sheet. Since the packaging structure of the present application adopts an additional dynamic voltage balancing module 200 on the basis of the cathode molybdenum sheet, the overall radial thickness of the packaging structure of the present application is increased compared with the original cathode molybdenum sheet, and the gate lead-out method of the chip 100 remains unchanged, which will affect the symmetry of the cathode electrode 101 and the anode electrode 104 of the chip 100, sacrificing the heat dissipation capacity of the cathode electrode 101 side, so it is necessary to compensate for the loss of thermal resistance of the entire semiconductor device by thinning / offsetting the anode electrode 104 packaging technology. Specifically, in order to achieve the unchanged overall thickness of the entire semiconductor device, the increased radial thickness of the cathode electrode 101 of the chip 100 can be compensated by thinning the radial thickness of the anode electrode 104, and the specific thinning thickness can be designed and calculated according to the increased thickness of the dynamic voltage balancing module 200.

[0036] The second aspect of the present application provides a semiconductor device, which includes a packaging structure of the chip as described above and a tube shell 300; a tube shell cathode 102 and a tube shell anode 103 are provided on the tube shell 300, and the tube shell cathode 102 and the tube shell anode 103 are both conventional metal electrodes in semiconductor devices, and the tube shell cathode 102 is electrically connected to the conductive gasket 22 of the dynamic voltage equalization module 200, and the tube shell anode 103 is electrically connected to the anode electrode 104. It should be noted that the semiconductor device of the present application is a high-power semiconductor device for power transmission equipment. When packaging the semiconductor device, the chip packaging structure is first electrically connected to the tube shell cathode 102 through a brazing process. Specifically, the conductive connection part 223 of the dynamic voltage equalization module 200 can be electrically connected to the tube shell cathode 102, and then the anode electrode 104 of the chip 100 is electrically connected to the tube shell anode 103 through a brazing process, thereby realizing the packaging of the entire semiconductor device. The semiconductor device of the present application adopts all embodiments of the packaging structure of the above-mentioned chip, and therefore has all the beneficial effects brought by the packaging structure of the above-mentioned chip, which will not be described in detail here.

[0037] In some embodiments, Figure 3 and Figure 6 As shown, the tube cathode ( Figure 6 The outer periphery of the Figure 6 The step structure shown in the figure), the conductive gasket 22 of the dynamic pressure equalizing module 200 has a conductive connecting portion 223 extending outward, and the conductive connecting portion 223 is sealed and connected to the step structure. In this embodiment, the conductive connecting portion 223 and the step structure on the cathode of the tube shell are sealed and connected by a brazing process in the prior art, wherein the step structure can provide a certain deformation space for the dynamic pressure equalizing module 200, and the deformation amount is ≥15μm.

[0038] In addition, the metal plate 21 of the dynamic pressure equalizing module 200 and the stepped structure of the tube shell cathode 102 are sealed and connected by a brazing process. Specifically, the surface of the metal plate 21 is in direct contact with the external heat sink, and the end of the metal plate 21 and the stepped structure are also sealed and connected to the tube shell cathode 102 by a brazing process, thereby improving the connection stability and reliability of the metal plate 21 and the tube shell cathode 102.

[0039] In the description of the present application, it should be understood that the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of the features. In the description of the present application, "plurality" means at least two, such as two, three, etc., unless otherwise clearly and specifically defined.

[0040] In this application, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection, an electrical connection, or communication with each other; it can be a direct connection, or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements, unless otherwise clearly defined. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0041] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present application. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine the different embodiments or examples described in this specification and the features of the different embodiments or examples, without contradiction.

[0042] Although the embodiments of the present application have been shown and described above, it can be understood that the above embodiments are exemplary and cannot be understood as limitations on the present application. Ordinary technicians in this field can change, modify, replace and modify the above embodiments within the scope of the present application.

Claims

1. A chip packaging structure, characterized in that: The chip packaging structure includes: a cathode electrode (101), stacked on the chip (100) and electrically connected to the chip (100), the cathode electrode (101) being divided into a plurality of pressure compensation areas (1011); A dynamic pressure equalizing module (200) is arranged on a side of the cathode electrode (101) facing away from the chip (100) and has a closed cavity (23), the closed cavity (23) is filled with an elastic buffer material, a plurality of dynamic insertion electrodes (24) are arranged in the closed cavity (23) and are electrically connected to the plurality of pressure compensation areas (1011) in a one-to-one correspondence, and an outer end portion of the dynamic pressure equalizing module (200) is sealed and connected to an external tube shell cathode (102).

2. The chip packaging structure according to claim 1, characterized in that: The pressure compensation area (1011) is an annular structure, and a plurality of the pressure compensation areas (1011) are arranged in sequence along the radial direction.

3. The chip packaging structure according to claim 1, characterized in that: The pressure compensation area (1011) is a fan-shaped structure, and the number of the pressure compensation areas (1011) of the fan-shaped structure is multiple and symmetrically distributed, and the multiple pressure compensation areas (1011) are combined into a disc-shaped structure.

4. The chip packaging structure according to claim 1, characterized in that: The dynamic pressure equalization module (200) comprises: a conductive gasket (22) located on a side of the cathode electrode (101) facing away from the chip (100), the side of the conductive gasket (22) facing away from the chip (100) being open, and the dynamic insertion electrode (24) being electrically connected to the pressure compensation area (1011) via the conductive gasket (22); A metal plate (21) is sealed at the opening, the metal plate (21) and the conductive gasket (22) cooperate to form the closed cavity (23), and a surface of the metal plate (21) facing away from the closed cavity (23) is in contact with an external heat sink.

5. The chip packaging structure according to claim 4, characterized in that: The conductive gasket (22) comprises a bottom surface (221) and a side surface (222) enclosing the periphery of the bottom surface (221); a plurality of dynamic insertion electrodes (24) are in contact with the bottom surface (221); an outer end portion of the side surface (222) extends toward a side away from the closed cavity (23) to form a conductive connection portion (223); and the conductive connection portion (223) is sealed and electrically connected to the external tube shell cathode (102).

6. The chip packaging structure according to claim 5, characterized in that: The number of the dynamic insertion electrodes (24) is the same as the number of the pressure compensation areas (1011) and they are arranged in a one-to-one correspondence, and the radial cross-sectional area of ​​each dynamic insertion electrode (24) is equal to the radial cross-sectional area of ​​each pressure compensation area (1011).

7. The chip packaging structure according to claim 6, characterized in that: A stop block (25) is provided between any two adjacent dynamic insertion electrodes (24), and a stop block (25) is also provided between the dynamic insertion electrode (24) located at the outermost layer and the side surface (222).

8. The chip packaging structure according to claim 7, characterized in that: The limit block (25) is made of a high temperature resistant and wear resistant material.

9. The chip packaging structure according to any one of claims 1 to 8, characterized in that: The elastic buffer material is high-voltage insulating gas or silicone rubber.

10. A semiconductor device, characterized in that: The semiconductor device comprises: The chip packaging structure according to any one of claims 1 to 9; and A tube shell (300), wherein a tube shell cathode (102) and a tube shell anode (103) are provided on the tube shell (300), the tube shell cathode (102) is electrically connected to the conductive gasket (22) of the dynamic voltage balancing module (200), and the tube shell anode (103) is electrically connected to the anode electrode (104) of the chip (100).

11. The semiconductor device according to claim 10, characterized in that The outer periphery of the tube shell cathode (102) is provided with a stepped structure, and the conductive gasket (22) of the dynamic voltage equalizing module (200) has a conductive connecting portion (223) extending outwards, and the conductive connecting portion (223) is sealed and connected to the stepped structure.

12. The semiconductor device according to claim 11, characterized in that The metal plate (21) of the dynamic pressure equalizing module (200) and the stepped structure of the tube shell cathode (102) are sealed and connected by a brazing process.

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