A preparation method and application of high-stability VCSEL device

Abstract

The present application provides a method for preparing a high-stability VCSEL device and its application, relating to the technical field of VCSEL device preparation, including A. fabricating an epitaxial wafer, wherein the epitaxial wafer comprises a substrate, an N-type DBR, an oxide layer, an active region, a P-type DBR, and a contact layer stacked in sequence. When fabricating the epitaxial wafer, the present application utilizes a highly purified semiconductor material as the starting material. High-purity raw materials can reduce the introduction of impurities at the source, and low impurity concentrations help reduce the diffusion of impurities into the active region or the formation of point defects during subsequent growth, thereby improving device stability.

Description

Technical Field

[0001] The present invention relates to the technical field of VCSEL device preparation, and in particular to a preparation method and application of a high-stability VCSEL device. Background Art

[0002] Vertical-cavity surface-emitting lasers (VCSELs), as an important semiconductor optoelectronic device, have broad application prospects in optical communications, optical storage, optical sensing, and lidar. However, the traditional VCSEL device fabrication process often struggles to achieve ideal device stability and performance due to the complexity of the epitaxial wafer structure and limitations of the fabrication process. In particular, during key steps such as epitaxial wafer fabrication, mesa etching, and electrode preparation, problems such as impurity introduction, surface damage, and incomplete oxidation severely impact the reliability and lifespan of VCSEL devices. Therefore, we address this issue by proposing a method for fabricating and applying highly stable VCSEL devices. Summary of the Invention

[0003] The purpose of the present invention is to address the problems raised by the current background technology.

[0004] In order to achieve the above-mentioned object of the invention, the present invention provides a preparation method and application of a high-stability VCSEL device to improve the above-mentioned problem.

[0005] The specific application is as follows:

[0006] A method for preparing a high-stability VCSEL device, comprising:

[0007] A. Fabricate an epitaxial wafer, wherein the epitaxial wafer includes a substrate, an N-type DBR, an oxide layer, an active region, a P-type DBR, and a contact layer stacked in sequence; perform atomic-level planarization on the substrate surface, specifically including:

[0008] The substrate is placed in a chemical mechanical polishing device and initially polished using a polishing slurry containing nano-abrasives, wherein the abrasive concentration of the polishing slurry is in the range of 10% to 15%, the polishing pressure is in the range of 5000 to 8000 Pascals, and the polishing head speed is in the range of 100 to 150 rpm, so as to reduce the surface roughness of the substrate to less than 5 nanometers;

[0009] The preliminarily polished substrate is subjected to ion beam sputter etching in an ultra-high vacuum environment to remove the remaining microscopic undulations on the surface;

[0010] The substrate is then placed in a chemical mechanical polishing device for fine polishing using a finer polishing solution. The abrasive concentration ranges from 5% to 8%, the polishing pressure is 3000 to 5000 Pascals, and the polishing head speed is 80 to 120 rpm. This reduces the substrate surface roughness to less than 1 nanometer, providing an atomically flat surface for subsequent epitaxial layer growth, improving the uniformity and crystal quality of epitaxial layer growth, and thus enhancing the stability of the VCSEL device.

[0011] B. preparing a mask pattern including a first mask and a second mask on the epitaxial wafer, wherein the first mask is used to define the shape and size of the first mesa, and the second mask is used to define the shape and size of the second mesa;

[0012] C. Etching a pattern onto the epitaxial wafer using a first mask through an etching process to form a first mesa, wherein the first mesa exposes the N-type DBR and the oxide layer; performing an ion implantation step to adjust the electrical properties of the N-type DBR, as follows:

[0013] Use an ion implanter to vertically implant ions into the N-type DBR region where the first mesa has been formed, and control the implantation angle deviation within ±2 degrees;

[0014] After implantation, the epitaxial wafer is annealed at high temperature, ranging from 800 to 1000 degrees Celsius, for 30 to 60 minutes, to repair the lattice damage caused by ion implantation, adjust the carrier concentration and mobility in the N-type DBR, and improve the electrical performance stability and reliability of the device.

[0015] D. Etch the pattern onto the VCSEL through a second mask to form a second mesa, which exposes part of the P-type DBR. Then, perform a selective area doping enhancement process on the second mesa. The specific steps are as follows:

[0016] Using focused ion beam implantation technology, hydrogen ions are implanted into a specific area of ​​the second table, where the specific area is determined by a pre-designed graphic template;

[0017] After the implantation is complete, annealing is performed in a rapid thermal annealing device at 900 degrees Celsius for 45 seconds. This allows the ions to achieve precise doping distribution in the P-type DBR, improving the conductivity and carrier injection efficiency of the second mesa, thereby enhancing the stability of the VCSEL device under high current injection.

[0018] E. Perform three-dimensional field effect modulation on the VCSEL device, specifically:

[0019] Using micro-nano processing technology, a three-dimensional electrode structure is constructed around the VCSEL device. The three-dimensional electrode structure includes a ring-shaped gate electrode made of gold. The gate is isolated from the epitaxial wafer by an insulating layer of silicon dioxide.

[0020] By applying different gate voltages, the electric field distribution in the active region is adjusted to confine and guide carriers, thereby suppressing the excitation of high-order lateral modes and allowing only the fundamental mode to operate. The gate voltage is controlled in the range of -5 to 5 volts. By modulating the electric field, the single-mode stability and beam quality of the VCSEL device are improved, thereby enhancing the overall stability of the device.

[0021] An N-type electrode is arranged on the N-type DBR, and a P-type electrode is arranged on the P-type DBR to form an ohmic contact, thereby completing the preparation of the VCSEL device.

[0022] The invention discloses an application of a preparation method of a high-stability VCSEL device, which is used to produce the high-stability VCSEL device.

[0023] Compared with the prior art, the present invention has the following beneficial effects:

[0024] In the scheme of this application:

[0025] 1. When making epitaxial wafers, it is crucial to select high-purity semiconductor materials as starting materials. High-purity raw materials can reduce the introduction of impurities from the source. Low impurity concentration helps reduce the diffusion of impurities into the active area or the formation of point defects during the subsequent growth process, thereby improving the stability of the device.

[0026] 2. The substrate surface is flattened at the atomic level, initially using chemical mechanical polishing equipment, followed by ion beam sputtering etching in an ultra-high vacuum environment, and finally fine polishing to reduce the substrate surface roughness to less than 1 nanometer. This treatment method greatly improves the flatness of the substrate surface, providing an excellent foundation for the growth of subsequent layers, helping to reduce defects during the epitaxial layer growth process and improving the overall quality and stability of the epitaxial wafer;

[0027] 3. After forming the first mesa, the N-type DBR is ion implanted and annealed. This allows precise adjustment of the N-type DBR's electrical properties, effectively repairing lattice damage caused by ion implantation, and enabling precise control of carrier concentration and mobility in the N-type DBR, thereby optimizing the device's electrical performance and improving the stability of the VCSEL device.

[0028] 4. A selective area doping enhancement process is performed on the second mesa. Phosphorus ions are implanted into specific areas using focused ion beam implantation technology and then annealed using a rapid thermal annealing device. This allows the ions to achieve precise doping distribution in the P-type DBR, which helps improve the electrical performance of the P-type DBR and, in turn, the performance of the entire VCSEL device.

[0029] 5. By constructing a three-dimensional electrode structure around the VCSEL device and using micro-nanofabrication technology to form a ring-shaped gate electrode, the electric field distribution in the active region is adjusted by applying different gate voltages to confine and guide carriers, allowing only the fundamental mode to operate. This technology effectively suppresses the excitation of high-order lateral modes and improves the optical performance and stability of the device.

[0030] 6. Use in-situ monitoring and feedback control technologies throughout the entire fabrication process. For example, RHEED systems are used to monitor epitaxial layer growth during molecular beam epitaxy (MBE) and other epitaxial wafer fabrication processes; plasma monitoring systems are used during etching; spectroscopic ellipsometry is used during oxidation; and four-probe testers are used during electrode fabrication. These technologies enable real-time monitoring of key parameters in each process step and timely adjustment of process parameters based on the monitoring results, ensuring accuracy and consistency throughout the fabrication process and improving product yield and quality stability.

[0031] 7. The N-type electrode is set through an evaporation process, and the P-type electrode is set through a sputtering process. An ohmic contact is formed between the P-type electrode and the P-type DBR, ensuring a good electrical connection. At the same time, the P-type DBR adopts a multi-layer stepped structure, and the lateral area of ​​each layer gradually decreases from bottom to top. This structural design helps to optimize the electric field distribution and carrier transport inside the device, further improving the performance and stability of the device. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] Figure 1 A schematic diagram of a method for preparing a high-stability VCSEL device provided in this application;

[0033] Figure 2 Schematic diagram of the preparation method of the high-stability VCSEL device provided in this application. DETAILED DESCRIPTION

[0034] In order to enable those skilled in the art to better understand the solutions of the present invention, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the embodiments described are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts should fall within the scope of protection of the present invention.

[0035] It should be noted that, in the absence of conflict, the embodiments of the present invention and the features and technical solutions therein may be combined with each other.

[0036] It should be noted that similar reference numerals and letters denote similar items in the following drawings, and therefore, once an item is defined in one drawing, it does not need to be further defined or explained in subsequent drawings.

[0037] Example 1, please refer to Figure 1-Figure 2 , a method for preparing a high-stability VCSEL device, comprising:

[0038] A. Fabricate epitaxial wafers, which include a sequentially stacked substrate, N-type DBR, oxide layer, active region, P-type DBR, and contact layer. The substrate supports the entire structure and provides physical support for the device. The N-type and P-type DBRs act as precise "light reflectors," reflecting light along a predetermined trajectory, greatly improving light utilization and ensuring that light is fully oscillated and amplified within the active region. The active region acts like a "luminescent core," continuously generating photons for efficient light generation and amplification. The contact layer acts like a "conductive highway," ensuring smooth electrode connections. Each layer performs its function and works closely together to fully guarantee stable and efficient device operation, achieving excellent optoelectronic device performance. The substrate surface is atomically flattened, specifically including:

[0039] The substrate is placed in a chemical mechanical polishing device and initially polished using a polishing slurry containing nano-abrasives, wherein the abrasive concentration of the polishing slurry is in the range of 10% to 15%, the polishing pressure is in the range of 5000 to 8000 Pascals, and the polishing head speed is in the range of 100 to 150 rpm, so as to reduce the surface roughness of the substrate to less than 5 nanometers;

[0040] The preliminarily polished substrate is subjected to ion beam sputter etching in an ultra-high vacuum environment to remove the remaining microscopic undulations on the surface;

[0041] The substrate is then placed in a chemical mechanical polishing device for fine polishing using a finer polishing solution. The abrasive concentration ranges from 5% to 8%, the polishing pressure is 3000 to 5000 Pascals, and the polishing head speed is 80 to 120 rpm. This reduces the substrate surface roughness to less than 1 nanometer, providing an atomically flat surface for subsequent epitaxial layer growth, improving the uniformity and crystal quality of epitaxial layer growth, and thus enhancing the stability of the VCSEL device.

[0042] B. preparing a mask pattern including a first mask and a second mask on the epitaxial wafer, wherein the first mask is used to define the shape and size of the first mesa, and the second mask is used to define the shape and size of the second mesa;

[0043] C. Etching a pattern onto the epitaxial wafer using a first mask through an etching process to form a first mesa, wherein the first mesa exposes the N-type DBR and the oxide layer; performing an ion implantation step to adjust the electrical properties of the N-type DBR, as follows:

[0044] Use an ion implanter to vertically implant ions into the N-type DBR region where the first mesa has been formed, and control the implantation angle deviation within ±2 degrees;

[0045] After implantation, the epitaxial wafer is annealed at high temperature, ranging from 800 to 1000 degrees Celsius, for 30 to 60 minutes, to repair the lattice damage caused by ion implantation, adjust the carrier concentration and mobility in the N-type DBR, and improve the electrical performance stability and reliability of the device.

[0046] D. Etch the pattern onto the VCSEL through a second mask to form a second mesa. The second mesa exposes part of the P-type DBR. The second mesa exposes the P-type DBR area, providing space for the placement of the P-type electrode. When the P-type electrode and the P-type DBR are closely attached, the resistance is reduced, and current can be injected in an orderly manner, which greatly optimizes the current injection path and reduces the unnecessary loss of energy during transmission. From the perspective of electrical performance, it injects strong power into the efficient operation of the device and ensures its stable operation in complex circuit environments. Then, the second mesa is subjected to a selective regional doping enhancement process. The specific steps are as follows:

[0047] Using focused ion beam implantation technology, hydrogen ions are implanted into a specific area of ​​the second table, where the specific area is determined by a pre-designed graphic template;

[0048] After the implantation is complete, annealing is performed in a rapid thermal annealing device at 900 degrees Celsius for 45 seconds. This allows the ions to achieve precise doping distribution in the P-type DBR, improving the conductivity and carrier injection efficiency of the second mesa, thereby enhancing the stability of the VCSEL device under high current injection.

[0049] E. Perform three-dimensional field effect modulation on the VCSEL device, specifically:

[0050] Using micro-nano processing technology, a three-dimensional electrode structure is constructed around the VCSEL device. The three-dimensional electrode structure includes a ring-shaped gate electrode made of gold. The gate is isolated from the epitaxial wafer by an insulating layer of silicon dioxide.

[0051] By applying different gate voltages, the electric field distribution in the active region is adjusted to confine and guide carriers, thereby suppressing the excitation of high-order lateral modes and allowing only the fundamental mode to operate. The gate voltage is controlled in the range of -5 to 5 volts. By modulating the electric field, the single-mode stability and beam quality of the VCSEL device are improved, thereby enhancing the overall stability of the device.

[0052] An N-type electrode is set on the N-type DBR, and a P-type electrode is set on the P-type DBR to form an ohmic contact, completing the preparation of the VCSEL device. The successful construction of the ohmic contact is the key to the efficient operation of the device. It ensures a low-resistance connection between the electrode and the corresponding DBR layer like a superconductor. The current flows into the device at the contact interface, allowing electrical energy to be converted into light energy with a higher efficiency, reducing the heat loss caused by contact resistance and a series of thermal effect problems caused by it, such as thermal noise and thermal stress, and improving the overall working efficiency of the device.

[0053] Furthermore, in step A, the production of the epitaxial wafer includes: selecting a semiconductor material, such as gallium arsenide (GaAs), indium phosphide (InP) or their alloys, and depositing a substrate, an N-type DBR, an oxide layer, an active region, a P-type DBR and a contact layer layer by layer through molecular beam epitaxy (MBE), chemical vapor deposition (CVD) or atomic layer deposition (ALD) technology.

[0054] Furthermore, step B includes:

[0055] First, ensure that the surface of the epitaxial wafer (which has been sequentially stacked with the substrate, N-type DBR, oxide layer, active area, P-type DBR, and contact layer) is clean and free of impurities, and perform preliminary cleaning and drying. Use the spin coating method to evenly apply a layer of photoresist to the surface of the epitaxial wafer. The epitaxial wafer coated with photoresist is pre-dried on a hot plate and then exposed. The exposed epitaxial wafer is placed in a developer to remove the exposed photoresist portion, thereby revealing the mask pattern. After all mask patterns are prepared, the epitaxial wafer is thoroughly cleaned and dried to remove all residual photoresist and other contaminants in preparation for the subsequent etching steps. A strict surface pretreatment process ensures that the epitaxial wafer is in good initial condition and reduces the interference of impurities on subsequent photolithography, etching and other processes. Spin-coating photoresist and precisely controlling the drying, exposure, and development steps ensures high-precision replication of the mask pattern, providing a precise template for subsequent etching and ensuring the precise formation of the device microstructure. Thorough cleaning and removal of residual photoresist reduces contamination of etching equipment and ensures process stability and device quality.

[0056] Furthermore, step C includes: placing the epitaxial wafer with the first mask pattern on the wafer carrier of the etching equipment, starting the etching equipment, starting the etching process, using reactive ion etching (RIE) or inductively coupled plasma (ICP) etching, and removing the material not covered by the mask by combining high-energy ion bombardment and chemical reaction. After the etching is completed, the epitaxial wafer is removed from the etching equipment and subjected to necessary cleaning and drying treatments to remove residual etching products and contaminants. Reactive ion etching or inductively coupled plasma etching technology has the characteristics of high etching rate, high selectivity and high precision, and can accurately etch the required mesa structure according to the mask pattern while minimizing damage to the mask and the underlying formed structure. The cleaning and drying treatment after etching can remove residual etching products, reduce their impact on subsequent processes, ensure stable device quality, and reduce problems such as short circuits and leakage caused by residues.

[0057] Furthermore, the P-type DBR portion adopts a multi-layer structure, and the lateral area of ​​each layer gradually decreases from bottom to top, forming a stepped structure to reduce the equivalent resistance and improve the heat dissipation performance. The stepped multi-layer P-type DBR structure reduces the resistance of the current transmission path from an electrical perspective, which is beneficial to improving the current injection efficiency and reducing power consumption; from a thermal perspective, the larger lateral area of ​​the lower layer is conducive to heat dissipation, improving the heat dissipation conditions of the device, reducing performance degradation caused by overheating, and improving the long-term working stability of the device.

[0058] In Example 2, the preparation method and application of the high-stability VCSEL device provided in Example 1 are further optimized. Specifically, the N-type electrode is provided by an evaporation process, and the P-type electrode is provided by a sputtering process, and an ohmic contact is formed between the P-type electrode and the P-type DBR to ensure good current injection efficiency. The N-type electrode is prepared by the evaporation process and the P-type electrode is prepared by the sputtering process. Compared with other methods, the thickness, uniformity and adhesion of the electrode can be better controlled. Combined with the realization of ohmic contact, the contact resistance between the electrode and the corresponding DBR layer is extremely low, the current can be smoothly injected, the energy loss is reduced, and the electro-optical conversion efficiency and working performance of the device are significantly improved.

[0059] Furthermore, in the process of preparing the VCSEL device, in-situ monitoring and feedback control technology is adopted, specifically:

[0060] During the preparation of epitaxial wafers by molecular beam epitaxy, chemical vapor deposition, or atomic layer deposition (step A), a reflection high-energy electron diffraction (RHEED) system is used to monitor the growth of the epitaxial layer in real time. Based on the intensity and periodicity of the RHEED diffraction pattern, growth parameters such as beam intensity, gas flow rate, and substrate temperature are adjusted to ensure the atomic layer thickness and quality of the epitaxial layer growth.

[0061] In steps C and D, a plasma monitoring system is used to monitor the density, ion energy, and chemically active components of the etching plasma, and the etching power, gas flow rate, and etching time are adjusted through feedback control to confirm the etching depth and sidewall verticality;

[0062] During step E, a four-probe tester is used to monitor the contact resistance of the electrode, and electrode deposition process parameters, such as sputtering power or evaporation rate, are adjusted according to the resistance value to ensure good ohmic contact.

[0063] Through this in-situ monitoring and feedback control technology, the high quality and high stability of VCSEL devices are guaranteed from every step of the preparation process.

[0064] Furthermore, a buffer layer is provided between the substrate and the N-type DBR. The material of the buffer layer is aluminum nitride (AlN) or gallium nitride (GaN), which is used to reduce the lattice mismatch between the substrate and the N-type DBR, reduce the dislocation density, improve the quality of the epitaxial wafer, provide an excellent foundation for the high-quality growth of subsequent functional layers, and ensure the high performance and stability of the device.

[0065] Example 3, application of a method for preparing a high-stability VCSEL device, used to produce a high-stability VCSEL device.

[0066] In the present invention, unless otherwise specified or limited, the terms "installed," "connected," "connect," "fixed," etc. should be understood in a broad sense. For example, they can refer to fixed connection, detachable connection, or integration; mechanical connection, electrical connection, or communication; direct connection or indirect connection through an intermediate medium; internal communication between two elements or interaction between two elements, unless otherwise specified. Those skilled in the art will understand the specific meanings of the above terms in the present invention based on specific circumstances.

[0067] Obviously, the embodiments described above are only some embodiments of the present invention, rather than all embodiments. The preferred embodiments of the present invention are given in the accompanying drawings, but they do not limit the patent scope of the present invention. The present invention can be implemented in many different forms. On the contrary, the purpose of providing these embodiments is to make the understanding of the disclosure of the present invention more thorough and comprehensive. Although the present invention has been described in detail with reference to the aforementioned embodiments, for those skilled in the art, it is still possible to modify the technical solutions described in the aforementioned specific embodiments, or to make equivalent replacements for some of the technical features therein. Any equivalent structure made using the contents of the present invention specification and drawings, directly or indirectly used in other related technical fields, is also within the scope of patent protection of the present invention.

Claims

1. A method for preparing a high-stability VCSEL device, characterized in that: include: A. Fabricate an epitaxial wafer, wherein the epitaxial wafer includes a substrate, an N-type DBR, an oxide layer, an active region, a P-type DBR, and a contact layer stacked in sequence; The substrate is subjected to atomic-level flattening treatment, specifically including: The substrate is placed in a chemical mechanical polishing device and initially polished using a polishing slurry containing nano-abrasives, wherein the abrasive concentration of the polishing slurry is in the range of 10% to 15%, the polishing pressure is in the range of 5000 to 8000 Pascals, and the polishing head speed is in the range of 100 to 150 rpm, so as to reduce the surface roughness of the substrate to less than 5 nanometers; The preliminarily polished substrate is subjected to ion beam sputter etching in an ultra-high vacuum environment to remove the remaining microscopic undulations on the surface; The substrate is placed in a chemical mechanical polishing device again and fine polishing is performed using a finer polishing solution with an abrasive concentration ranging from 5% to 8%, a polishing pressure of 3000 to 5000 Pascals, and a polishing head speed of 80 to 120 rpm, so that the substrate surface roughness reaches less than 1 nanometer; B. preparing a mask pattern including a first mask and a second mask on the epitaxial wafer, wherein the first mask is used to define the shape and size of the first mesa, and the second mask is used to define the shape and size of the second mesa; C. Etching a pattern onto the epitaxial wafer using a first mask through an etching process to form a first mesa, wherein the first mesa exposes the N-type DBR and the oxide layer; performing an ion implantation step to adjust the electrical properties of the N-type DBR, as follows: Use an ion implanter to vertically implant ions into the N-type DBR region where the first mesa has been formed, and control the implantation angle deviation within ±2 degrees; After implantation, the epitaxial wafer is annealed at high temperature, ranging from 800 to 1000 degrees Celsius, for 30 to 60 minutes, to repair the lattice damage caused by ion implantation and achieve the regulation of carrier concentration and mobility in the N-type DBR. D. Etch the pattern onto the VCSEL through a second mask to form a second mesa, which exposes part of the P-type DBR. Then, perform a selective area doping enhancement process on the second mesa. The specific steps are as follows: Using focused ion beam implantation technology, hydrogen ions are implanted into a specific area of ​​the second table, where the specific area is determined by a pre-designed graphic template; After the implantation is completed, annealing is carried out in a rapid thermal annealing device at a temperature of 900 degrees Celsius for 45 seconds to achieve precise doping distribution of ions in the P-type DBR. E. Perform three-dimensional field effect modulation on the VCSEL device, specifically: Using micro-nano processing technology, a three-dimensional electrode structure is constructed around the VCSEL device. The three-dimensional electrode structure includes a ring-shaped gate electrode made of gold. The gate is isolated from the epitaxial wafer by an insulating layer of silicon dioxide. By applying different gate voltages, the electric field distribution in the active region is adjusted to confine and guide the carriers, thereby suppressing the excitation of high-order lateral modes and allowing only the fundamental mode to operate. An N-type electrode is arranged on the N-type DBR, and a P-type electrode is arranged on the P-type DBR to form an ohmic contact, thereby completing the preparation of the VCSEL device.

2. The method for preparing a high-stability VCSEL device according to claim 1, wherein: In step A, the production of the epitaxial wafer includes: selecting semiconductor materials, and depositing them layer by layer to form a substrate, N-type DBR, oxide layer, active area, P-type DBR and contact layer through molecular beam epitaxy, chemical vapor deposition or atomic layer deposition technology.

3. The method for preparing a high-stability VCSEL device according to claim 2, wherein: Step B includes: First, ensure that the surface of the epitaxial wafer is clean and free of impurities, and perform preliminary cleaning and drying. Use the spin coating method to evenly coat a layer of photoresist on the surface of the epitaxial wafer. Pre-dry the epitaxial wafer coated with photoresist on a hot plate and then expose it. The exposed epitaxial wafer is placed in a developer to remove the exposed photoresist portion, thereby revealing the mask pattern. After completing the preparation of all mask patterns, the epitaxial wafer is thoroughly cleaned and dried to remove all residual photoresist and other contaminants, preparing for the subsequent etching step.

4. The method for preparing a high-stability VCSEL device according to claim 3, wherein: Step C includes: placing the epitaxial wafer with the first mask pattern on the wafer carrier of the etching equipment, starting the etching equipment, starting the etching process, using reactive ion etching or inductively coupled plasma etching, and removing the material not covered by the mask by a combination of high-energy ion bombardment and chemical reaction. After the etching is completed, the epitaxial wafer is removed from the etching equipment and necessary cleaning and drying treatment is performed to remove residual etching products and contaminants.

5. The method for preparing a high-stability VCSEL device according to claim 4, wherein: The P-type DBR portion adopts a multi-layer structure, and the lateral area of ​​each layer gradually decreases from bottom to top, forming a stepped structure.

6. The method for preparing a high-stability VCSEL device according to claim 5, wherein: The N-type electrode is provided by an evaporation process, the P-type electrode is provided by a sputtering process, and an ohmic contact is formed between the P-type electrode and the P-type DBR.

7. The method for preparing a high-stability VCSEL device according to claim 6, wherein: In the process of preparing VCSEL devices, in-situ monitoring and feedback control technology are used, specifically: When preparing epitaxial wafers by molecular beam epitaxy, chemical vapor deposition, or atomic layer deposition (step A), a reflection high-energy electron diffraction (RHEED) system is used to monitor the growth of the epitaxial layer in real time. The growth parameters are adjusted based on the intensity and periodicity of the RHEED diffraction pattern.

8. The method for preparing a high-stability VCSEL device according to claim 7, wherein: In steps C and D, a plasma monitoring system is used to monitor the density, ion energy, and chemically active components of the etching plasma, and the etching power, gas flow rate, and etching time are adjusted through feedback control to confirm the etching depth and sidewall verticality; During step E, a four-probe tester is used to monitor the contact resistance of the electrode, and the electrode deposition process parameters are adjusted according to the resistance value.

9. The method for preparing a high-stability VCSEL device according to claim 8, wherein: A buffer layer is provided between the substrate and the N-type DBR.

10. An application of the method for preparing a high-stability VCSEL device according to claim 9, characterized in that: Used to produce high-stability VCSEL devices.

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