Light-emitting assembly and manufacturing method and mass transfer method thereof

Abstract

The invention relates to a light-emitting assembly and a manufacturing method and a mass transfer method thereof. The manufacturing method of the light-emitting component comprises the following steps: providing an island-shaped epitaxial structure; wherein the island-shaped epitaxial structure comprises an island-shaped epitaxial layer and a temporary substrate, and the island-shaped epitaxial layer is adhered to the temporary substrate through a bonding adhesive material; respectively manufacturing a first N-type sub-electrode and a first P-type sub-electrode on the island-shaped epitaxial layer; etching the bonding glue material in a preset position range below the island-shaped epitaxial layer so as to suspend at least part of the island-shaped epitaxial layer in the preset position range; depositing a passivation layer on the basis of the island-shaped epitaxial layer on which the first N-type sub-electrode and the first P-type sub-electrode are manufactured; wherein the thickness of the passivation layer is smaller than that of the bonding glue material; and etching the passivation layer above the first N-type sub-electrode and the first P-type sub-electrode, and respectively manufacturing a second N-type sub-electrode and a second P-type sub-electrode on the basis of etching the passivation layer above the first N-type sub-electrode and the first P-type sub-electrode. By applying the scheme of the invention, the mass transfer efficiency can be improved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a light-emitting component and a manufacturing method thereof, and a mass transfer method. Background Art

[0002] Compared with other existing display technologies (LCD, PDP, OLED, etc.), Micro / Mini LED technology has the advantages of high brightness, high contrast, wide color gamut, large viewing angle, low power consumption, long life, ultra-thin flexible display, etc., and is considered to be the ultimate technology for future displays.

[0003] In the production process of traditional Micro LED chips, the passivation layer on the outside is adhered to the sapphire substrate. After the bonding adhesive is separated, the Micro LED chip falls onto the driver backplane. However, the following problems are usually encountered in the process of bonding the Micro LED chip to the driver backplane (mass transfer): 1. When the bonding adhesive is separated, the contact part between the bonding adhesive and the passivation layer will be subjected to an impact force due to the separation of the bonding adhesive. This impact force will cause irregular fractures in the passivation layer, which may extend to the outside of the Micro LED chip and affect the weather resistance of the Micro LED chip; 2. The irregular fractures will also cause the Micro LED chip to tilt or fall to one side during the falling process, or even fail to fall onto the driver backplane. Summary of the invention

[0004] In view of the above-mentioned deficiencies in the prior art, the purpose of the present application is to provide a light-emitting component and a manufacturing method thereof, and a mass transfer method, aiming to solve the above-mentioned technical problems.

[0005] A method for manufacturing a light-emitting component, comprising:

[0006] Providing an island epitaxial structure; wherein the island epitaxial structure comprises an island epitaxial layer and a temporary substrate, and the island epitaxial layer is bonded to the temporary substrate by a bonding adhesive;

[0007] Forming a first N-type sub-electrode and a first P-type sub-electrode on the island epitaxial layer respectively;

[0008] Etching the bonding glue material located within a preset position range below the island-shaped epitaxial layer so that at least a portion of the island-shaped epitaxial layer within the preset position range is suspended;

[0009] Depositing a passivation layer on the basis of the island epitaxial layer having the first N-type sub-electrode and the first P-type sub-electrode; wherein the thickness of the passivation layer is less than the thickness of the bonding glue; and

[0010] The passivation layer above the first N-type sub-electrode and the first P-type sub-electrode is etched, and on this basis, a second N-type sub-electrode and a second P-type sub-electrode are respectively manufactured.

[0011] The above-mentioned method for manufacturing a light-emitting component, when etching the bonding adhesive material below the island-shaped epitaxial layer, only etches the bonding adhesive material within a preset position range below the island-shaped epitaxial layer, thereby making the island-shaped epitaxial layer within the preset position range suspended in the air, and then, on this basis, continue to deposit a passivation layer with a thickness less than the thickness of the bonding adhesive material; the passivation layer can be disconnected from the contact portion with the bonding adhesive material to form an opening, which can not only release the pressure generated when the bonding adhesive material is dissociated, so that the passivation layer on the side of the chip will not break, and in addition, the opening formed by the disconnection can also make the pressure generated when the bonding adhesive material is dissociated release more uniformly, so that the chip can fall more smoothly during the process, and will not be skewed, or fall to one side, or even fail to fall onto the driving backplane.

[0012] Optionally, the thickness of the passivation layer is between 1000-5000 angstroms, and the thickness of the bonding adhesive is between 1-2 microns.

[0013] Optionally, before the step of depositing a passivation layer on the basis of the island-shaped epitaxial layer having the first N-type sub-electrode and the first P-type sub-electrode, the method further includes:

[0014] Under a preset etching gas atmosphere, a preset ICP etching power and a preset RF etching power, channel etching is performed on the island epitaxial structure to expose the temporary substrate.

[0015] Optionally, the preset etching gas atmosphere is CF4 and O2, the preset ICP etching power is between 200W-500W, and the preset RF etching power is between 100W-150W.

[0016] Optionally, the step of etching the bonding glue located at the edge of the island-shaped epitaxial layer so that at least a portion of the island-shaped epitaxial layer within the preset position range is suspended includes:

[0017] The RF etching power is turned off, and in an etching gas atmosphere of CF4 and O2 and an ICP etching power range of 200W-500W, the bonding glue at the edge of the island epitaxial layer is etched so that at least part of the island epitaxial layer within the preset position range is suspended.

[0018] Optionally, the light emitting component manufacturing method further includes:

[0019] The etching time of the bonding adhesive is controlled so that the preset position ranges from 0.5 μm to 5 μm.

[0020] Optionally, the bonding adhesive is benzocyclobutene.

[0021] Optionally, the island epitaxial layer includes an N-type semiconductor layer, an active layer and a P-type semiconductor layer; wherein the N-type semiconductor layer is bonded to the temporary substrate through the bonding adhesive.

[0022] Based on the same inventive concept, the present application also provides a light-emitting component, comprising: a light-emitting chip and a temporary substrate, wherein the light-emitting chip is bonded to the temporary substrate through a bonding adhesive; wherein the bottom edge of the light-emitting chip is suspended, and the passivation layer of the light-emitting chip is disconnected at the suspended portion.

[0023] In the above-mentioned light-emitting component, since the bottom edge of the light-emitting chip is suspended and the passivation layer of the light-emitting chip is disconnected at the suspended position, the disconnected position can not only release the pressure generated when the bonding adhesive is dissociated, so that the passivation layer on the side of the chip will not be broken, but also the opening formed by the disconnection can make the pressure generated when the bonding adhesive is dissociated more evenly released, thereby making the chip fall more smoothly during the process, and will not be skewed, or fall to one side, or even fail to fall onto the driving backplane.

[0024] Based on the same inventive concept, the present application also provides a mass transfer method, comprising:

[0025] Providing the aforementioned light-emitting assembly and a driving backplane;

[0026] Aligning the chip electrodes on the light-emitting component with the pads on the driving backplane;

[0027] Peeling off the light-emitting chip and the temporary substrate from the bonding adhesive; and

[0028] The chip electrodes and pads are bonded. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] Figure 1 A schematic diagram of a process for manufacturing a light-emitting component in an embodiment of the present application;

[0030] Figure 2 is a schematic flow chart of a method for manufacturing a light emitting component in another embodiment of the present application;

[0031] Figure 3 For Figure 1 Schematic diagram of the structural changes of the light-emitting component corresponding to the method process;

[0032] Figure 4 A schematic diagram of the manufacturing structure of an island-shaped epitaxial structure in one embodiment of the present application;

[0033] Figure 5 FIG. 4 is a schematic diagram of a mass transfer method in an embodiment of the present application.

[0034] Reference numerals:

[0035] 10-temporary substrate; 100-P-type semiconductor layer; 200-active layer; 300-N-type semiconductor layer; BS-bonding adhesive; M1-first N-type sub-electrode; M2-first P-type sub-electrode; M3-second N-type sub-electrode; M4-second P-type sub-electrode; PV-passivation layer; PR-photoresist; GS-growth substrate; RD-red light chip; PD-pad; BM-driving backplane. DETAILED DESCRIPTION

[0036] In order to facilitate the understanding of the present application, the present application will be described more fully below with reference to the relevant drawings. The preferred embodiments of the present application are given in the drawings. However, the present application can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of the present application more thoroughly and comprehensively understood.

[0037] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which this application belongs. The terms used herein in the specification of this application are only for the purpose of describing specific embodiments and are not intended to limit this application.

[0038] As described in the background technology of this application, the following problems are usually encountered in the process of bonding the Micro LED chip to the driving backplane (mass transfer): 1. When the bonding adhesive is dissociated, the contact portion of the bonding adhesive and the passivation layer will be subjected to an impact force due to the dissociation of the bonding adhesive. The impact force will cause irregular fractures in the passivation layer, and the fractures may extend to the outside of the Micro LED chip, affecting the weather resistance of the Micro LED chip; 2. The irregular fractures will also cause the Micro LED chip to tilt or fall to one side during the falling process, or even fail to fall onto the driving backplane.

[0039] Based on this, the present application hopes to provide a solution that can solve the above-mentioned technical problems, the details of which will be described in the subsequent embodiments.

[0040] See also Figure 1 The present application provides a method for manufacturing a light-emitting component, which may include steps S100 to S500.

[0041] Step S100, providing an island epitaxial structure; wherein the island epitaxial structure comprises an island epitaxial layer and a temporary substrate, and the island epitaxial layer is bonded to the temporary substrate by a bonding adhesive;

[0042] Step S200, respectively fabricating a first N-type sub-electrode and a first P-type sub-electrode on the island epitaxial layer;

[0043] Step S300, etching the bonding adhesive material located within a preset position range below the island-shaped epitaxial layer so that at least a portion of the island-shaped epitaxial layer within the preset position range is suspended;

[0044] Step S400, depositing a passivation layer on the basis of the island epitaxial layer having the first N-type sub-electrode and the first P-type sub-electrode; wherein the thickness of the passivation layer is less than the thickness of the bonding adhesive; and

[0045] Step S500, etching the passivation layer above the first N-type sub-electrode and the first P-type sub-electrode, and on this basis, respectively manufacturing a second N-type sub-electrode and a second P-type sub-electrode.

[0046] The above-mentioned method for manufacturing a light-emitting component, when etching the bonding adhesive material below the island-shaped epitaxial layer, only etches the bonding adhesive material within a preset position range below the island-shaped epitaxial layer, thereby making the island-shaped epitaxial layer within the preset position range suspended in the air, and then, on this basis, continue to deposit a passivation layer with a thickness less than the thickness of the bonding adhesive material; the passivation layer can be disconnected from the contact portion with the bonding adhesive material to form an opening, which can not only release the pressure generated when the bonding adhesive material is dissociated, so that the passivation layer on the side of the chip will not break, and in addition, the opening formed by the disconnection can also make the pressure generated when the bonding adhesive material is dissociated release more uniformly, so that the chip can fall more smoothly during the process, and will not be skewed, or fall to one side, or even fail to fall onto the driving backplane.

[0047] Specifically. Please refer to Figure 4 , is a schematic diagram of the method for making an island epitaxial structure. Figure 4As shown, first, an epitaxial wafer including a growth substrate GS, a P-type semiconductor layer 100, an active layer 200 and an N-type semiconductor layer 300 is provided. In the present application, the growth substrate GS may be a gallium arsenide substrate, and accordingly, the P-type semiconductor layer 100, the active layer 200 and the N-type semiconductor layer 300 grown on the gallium arsenide substrate are semiconductor layers of red light. Subsequently, a layer of bonding glue BS is spin-coated on the N-type semiconductor layer 300, and then a layer of bonding glue BS is also spin-coated on another temporary substrate 10. The temporary substrate 10 of the present application may be a sapphire substrate or a silicon substrate; then, the epitaxial wafers spin-coated with the bonding glue BS are bonded to the temporary substrate 10. In the present specific embodiment, the N-type semiconductor layer 300 is mainly bonded to the temporary substrate 10 through the bonding glue BS. It can be understood that the bonding adhesive BS can also be only spin-coated on the epitaxial wafer or the temporary substrate 10, and then the bonding work is carried out. This application does not make further restrictions on this. The more commonly used bonding adhesive BS is benzocyclobutene, also known as BCB adhesive. After the epitaxial wafer and the temporary substrate 10 are bonded, the growth substrate GS can be removed. Since the growth substrate GS is made of gallium arsenide, the growth substrate GS can be removed by wet etching. After the removal is completed, a layer of photoresist PR can be spin-coated on the P-type semiconductor layer 100, and then the photoresist PR is patterned (exposure, development, etching) to obtain the desired pattern. Finally, the P-type semiconductor layer 100, the active layer 200 and the N-type semiconductor layer 300 are etched using the pattern as a mask, which is step etching, also known as MESA etching. Finally, the island epitaxial structure in the embodiment of the present application can be obtained.

[0048] In this specific embodiment, since the growth substrate GS of the red light chip is made of gallium arsenide, the gallium arsenide material will absorb the light generated by the red light chip, resulting in a lower overall brightness of the red light chip. Therefore, the traditional red light chip process requires the gallium arsenide substrate to be removed to improve the luminous efficiency.

[0049] For details, see Figure 3 After obtaining the island epitaxial structure according to the above-mentioned embodiment, the first N-type sub-electrode M1 and the first P-type sub-electrode M2 ​​can be manufactured on this basis. Exemplarily, the manufacturing of the first N-type sub-electrode M1 and the first P-type sub-electrode M2 ​​can be completed by, for example, metal sputtering, evaporation, etc.; in addition, the materials that can be selected for the first N-type sub-electrode M1 and the first P-type sub-electrode M2 ​​include but are not limited to any one of gold, nickel, platinum, copper, aluminum, titanium, or an alloy formed by any two or more of them. This application does not make further restrictions on this, and those skilled in the art can select and adjust according to actual conditions. After the first N-type sub-electrode M1 and the first P-type sub-electrode M2 ​​are manufactured, a passivation layer PV can be deposited on this basis. The passivation layer PV is mainly used to protect the chip from environmental corrosion. The passivation layer PV of this application can be selected from silicon dioxide, aluminum oxide and silicon nitride.

[0050] Optionally, see also Figure 2 and Figure 3 Before the step of depositing a passivation layer on the basis of the island-shaped epitaxial layer having the first N-type sub-electrode and the first P-type sub-electrode, step S300a may also be included.

[0051] Step S300a, performing channel etching on the island epitaxial structure under a preset etching gas atmosphere, a preset ICP etching power and a preset RF etching power to expose the temporary substrate.

[0052] Optionally, the etching gas atmosphere is CF4 and O2, the preset ICP etching power is between 200W-500W (chemical reaction, isotropic), and the preset RF etching power is between 100W-150W (physical bombardment, adding electric field, making ion beam). It can be understood that the etching gas atmosphere is CF4 and O2 and the ICP etching power is between 200W-500W, which is mainly for chemical reaction, which is isotropic, and adding RF etching is to increase the electric field, enhance the physical bombardment function, and make the ion beam have a certain directionality and anisotropy, so that the bonding glue BS under the island epitaxial structure is etched to expose the temporary substrate 10. This step is also called channel etching, i.e. ISO etching.

[0053] For further information, please refer to Figure 2 The step of etching the bonding adhesive material at the edge of the island epitaxial layer so that at least part of the island epitaxial layer within the preset position range is suspended may be sub-step S300b:

[0054] The RF etching power is turned off, and in an etching gas atmosphere of CF4 and O2 and an ICP etching power range of 200W-500W, the bonding glue at the edge of the island epitaxial layer is etched so that at least part of the island epitaxial layer within the preset position range is suspended.

[0055] Specifically, after executing the previous step S300a to cleanly etch the bonding glue BS in the aisle, the RF etching power can be turned off, and then the current etching environment is maintained in the etching gas atmosphere of CF4 and O2 and the ICP etching power range of 200W-500W, so that only chemical etching is performed at present, and the bonding glue BS is etched inwardly using the isotropic principle, thereby etching away the bonding glue BS under the island epitaxial layer, so that the island epitaxial layer in this area is suspended.

[0056] Furthermore, the light emitting component manufacturing method further includes:

[0057] The etching time of the bonding adhesive is controlled so that the preset position ranges from 0.5 μm to 5 μm.

[0058] By controlling the etching time of the bonding glue BS in the previous step, the preset position range is between 0.5 μm and 5 μm. In other words, by controlling the etching time, the shrinkage etching amount of the bonding glue BS can be controlled. In this specific embodiment, the shrinkage etching amount is between 0.5 μm and 5 μm. Exemplarily, the shrinkage etching amount can be any value of 0.5μm, 1μm, 1.5μm, 2μm, 2.5μm, 3μm, 3.5μm, 4μm, 4.5μm or 5μm; or, the shrinkage etching amount can also be any value of 0.6μm, 1.1μm, 1.6μm, 2.1μm, 2.6μm, 3.1μm, 3.6μm, 4.1μm, 4.6μm or 5μm; or, any value of 0.9μm, 1.3μm, 1.6μm, 2.2μm, 2.7μm, 3.3μm, 3.7μm, 4.2μm, 4.7μm or 5μm. This application does not make further restrictions on this, and those skilled in the art can select and adjust according to actual needs.

[0059] Furthermore, in order to ensure that an opening can be formed at the place where the aforementioned bonding glue BS is retracted, in this specific embodiment, when depositing the passivation layer PV, the thickness of the deposited passivation layer PV is deliberately controlled to be much smaller than the thickness of the bonding glue BS, so that after the deposition of the passivation layer PV is completed, the place where the bonding glue BS is retracted will not be connected and covered by the passivation layer PV. Specifically, the deposition thickness of the passivation layer PV of the present application can be selected to be between 1000-5000 angstroms, and the spin coating thickness of the bonding glue BS is between 1-2 microns. The deposition method of the passivation layer PV can be selected to be PECVD (Plasma Enhanced Chemical Vapor Deposition) deposition, or ALD (Atomic Layer Deposition) deposition. Among them, the PECVD deposition method has poor coverage of the gap during film coating, and correspondingly, it is more likely to form an opening at the place where the aforementioned bonding glue BS is retracted.

[0060] After the passivation layer PV is deposited, the passivation layer PV above the first N-type sub-electrode M1 and the first P-type sub-electrode M2 ​​can be etched to expose the first N-type sub-electrode M1 and the first P-type sub-electrode M2, and on this basis, the second N-type sub-electrode M3 and the second P-type sub-electrode M4 are respectively made. Exemplarily, the second N-type sub-electrode M3 and the second P-type sub-electrode M4 can be made by, for example, metal sputtering, evaporation, etc.; in addition, the materials that can be selected for the second N-type sub-electrode M3 and the second P-type sub-electrode M4 include but are not limited to any one of gold, nickel, platinum, copper, aluminum, titanium, or an alloy formed by any two or more of them. This application does not make further restrictions on this, and those skilled in the art can make selections and adjustments according to actual conditions.

[0061] Based on the same inventive concept, the present application also provides a light-emitting component, comprising: a light-emitting chip and a temporary substrate, wherein the light-emitting chip is bonded to the temporary substrate through a bonding adhesive; wherein the bottom edge of the light-emitting chip is suspended, and the passivation layer of the light-emitting chip is disconnected at the suspended portion.

[0062] In the above-mentioned light-emitting component, since the bottom edge of the light-emitting chip is suspended and the passivation layer of the light-emitting chip is disconnected at the suspended position, the disconnected position can not only release the pressure generated when the bonding adhesive is dissociated, so that the passivation layer on the side of the chip will not be broken, but also the opening formed by the disconnection can make the pressure generated when the bonding adhesive is dissociated more evenly released, thereby making the chip fall more smoothly during the process, and will not be skewed, or fall to one side, or even fail to fall onto the driving backplane.

[0063] It can be understood that the light-emitting chip in the light-emitting component can be a single red light chip or multiple red light chips, and its manufacturing method has been described in the above embodiment, and will not be further described here. The description of the light-emitting component in this specific embodiment can refer to the above embodiment, and this application will not be further described here.

[0064] It should be pointed out that the light-emitting chip in the light-emitting component of the present application mainly includes the aforementioned island epitaxial structure, the passivation layer PV and the first N-type sub-electrode M1, the first P-type sub-electrode M2, the second N-type sub-electrode M3 and the second P-type sub-electrode M4. Among them, the first N-type sub-electrode M1, the first P-type sub-electrode M2, the second N-type sub-electrode M3 and the second P-type sub-electrode M4 constitute the chip electrode part of the light-emitting chip of the present application as a whole. Specifically, the first N-type sub-electrode M1 and the second N-type sub-electrode M3 constitute an N-type electrode, which is electrically connected to the N-type semiconductor layer 300 and connected to the negative terminal of the current; the first P-type sub-electrode M2 ​​and the second P-type sub-electrode M4 constitute a P-type electrode, which is electrically connected to the P-type semiconductor layer 100 and connected to the positive terminal of the current.

[0065] Based on the same inventive concept, Figure 5 The present application also provides a mass transfer method, comprising:

[0066] Providing the aforementioned light-emitting assembly and a driving backplane;

[0067] Aligning the chip electrodes on the light-emitting component with the pads on the driving backplane;

[0068] Peeling off the light-emitting chip and the temporary substrate from the bonding adhesive; and

[0069] The chip electrodes and pads are bonded.

[0070] Specifically, the above-mentioned light-emitting component is provided, and the light-emitting component includes a temporary substrate 10 and a plurality of red light chips RD;

[0071] A driving backplane BM is further provided. A plurality of driving pads PD are arranged on the driving backplane. A driving circuit is arranged inside the driving backplane BM. The driving circuit can be an active driving circuit or a passive driving circuit.

[0072] Align the light-emitting assembly and the driving device;

[0073] The laser selectively peels off part of the red light chip RD, that is, the bonding adhesive BS at the part of the red light chip RD is ablated. Since the light-emitting component of the present application has an opening at the bonding adhesive BS, the pressure generated when the bonding adhesive BS is dissociated will be released through the opening. In addition, the opening formed by the disconnection can also make the pressure generated when the bonding adhesive is dissociated more uniform, so that the chip will fall more smoothly, and will not be skewed, fall to one side, or even fail to fall onto the driver backplane.

[0074] After the stripping of the red light chip RD is completed, a bonding process may be performed. The bonding process may also use a laser to weld the chip electrodes of the red light chip RD to the corresponding pads PD to achieve electrical conduction.

[0075] It should be understood that the application of the present invention is not limited to the above examples. For ordinary technicians in this field, improvements or changes can be made based on the above description. All these improvements and changes should fall within the scope of protection of the claims attached to the present invention.

Claims

1. A method for manufacturing a light emitting component, characterized in that: include: Providing an island epitaxial structure; wherein the island epitaxial structure comprises an island epitaxial layer and a temporary substrate, and the island epitaxial layer is bonded to the temporary substrate by a bonding adhesive; Forming a first N-type sub-electrode and a first P-type sub-electrode on the island epitaxial layer respectively; Etching the bonding glue material located within a preset position range below the island-shaped epitaxial layer so that at least a portion of the island-shaped epitaxial layer within the preset position range is suspended; Depositing a passivation layer on the basis of the island epitaxial layer having the first N-type sub-electrode and the first P-type sub-electrode; wherein the thickness of the passivation layer is less than the thickness of the bonding glue; and The passivation layer above the first N-type sub-electrode and the first P-type sub-electrode is etched, and on this basis, a second N-type sub-electrode and a second P-type sub-electrode are respectively manufactured.

2. The method for manufacturing a light emitting component according to claim 1, characterized in that: The thickness of the passivation layer is between 1000-5000 angstroms, and the thickness of the bonding adhesive is between 1-2 microns.

3. The method for manufacturing a light emitting component according to claim 1, wherein: Before the step of depositing a passivation layer on the island epitaxial layer having the first N-type sub-electrode and the first P-type sub-electrode, the method further includes: Under a preset etching gas atmosphere, a preset ICP etching power and a preset RF etching power, channel etching is performed on the island epitaxial structure to expose the temporary substrate.

4. The method for manufacturing a light emitting component according to claim 3, characterized in that: The preset etching gas atmosphere is CF4 and O2, the preset ICP etching power is between 200W-500W, and the preset RF etching power is between 100W-150W.

5. The method for manufacturing a light emitting component according to claim 3, characterized in that: The step of etching the bonding glue material located at the edge of the island-shaped epitaxial layer so that at least a portion of the island-shaped epitaxial layer within the preset position range is suspended comprises: The RF etching power is turned off, and in an etching gas atmosphere of CF4 and O2 and an ICP etching power range of 200W-500W, the bonding glue at the edge of the island epitaxial layer is etched so that at least part of the island epitaxial layer within the preset position range is suspended.

6. The method for manufacturing a light emitting component according to claim 5, characterized in that: Also includes: The etching time of the bonding adhesive is controlled so that the preset position ranges from 0.5 μm to 5 μm.

7. The method for manufacturing a light emitting component according to claim 1, wherein: The bonding adhesive material is benzocyclobutene.

8. The method for manufacturing a light emitting component according to any one of claims 1 to 7, characterized in that: The island epitaxial layer comprises an N-type semiconductor layer, an active layer and a P-type semiconductor layer; wherein the N-type semiconductor layer is bonded to the temporary substrate through the bonding adhesive.

9. A light emitting component, characterized in that: include: A light-emitting chip and a temporary substrate, wherein the light-emitting chip is bonded to the temporary substrate through a bonding adhesive; The bottom edge of the light-emitting chip is suspended, and the passivation layer of the light-emitting chip is disconnected at the suspended position.

10. A method for mass transfer, characterized in that: include: Providing the light-emitting assembly as claimed in claim 9 and a driving backplane; Aligning the chip electrodes on the light-emitting component with the pads on the driving backplane; Peeling off the light-emitting chip and the temporary substrate from the bonding adhesive; as well as The chip electrodes and pads are bonded.

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