The invention relates to the technical field of
memory control and
artificial intelligence, and discloses a 3D stacked
memristor array optimization method based on AI
data analysis, and the method comprises the following steps: S1, extracting
frequency domain impedance response data containing a resistance component and a
reactance component, and constructing a local
state vector reflecting a physical state; s2, in combination with the
time evolution characteristics of the historical operation sequence, outputting a sensitivity graph representing the interference susceptibility degrees of the target unit and the reference unit to different frequencies; s3, determining the optimal write-in carrier frequency and write-in
voltage amplitude of each layer through game iteration; and S4, generating a write-in
voltage waveform subjected to
frequency spectrum mask filtering, and applying the write-in
voltage waveform to the target unit to complete write-in operation. According to the method, the
frequency domain impedance is analyzed through the AI to predict interference, the orthogonal frequency is distributed by using the game theory, and the reverse offset
signal is applied, so that efficient concurrent writing of the 3D stacked array is realized, interlayer
crosstalk is effectively inhibited, and the
data stability is improved.