Deposition apparatus and deposition method

Abstract

The present invention relates to a deposition apparatus and a deposition method using a linear deposition source, wherein the deposition apparatus may include: a substrate support supporting a substrate; a linear deposition source including a linear source gas nozzle member and a linear reaction gas nozzle member that are disposed in parallel in a first axial direction intersecting the substrate and that eject a source gas and a reaction gas toward the substrate; a driving member for moving the substrate support in a second axial direction crossing the first axial direction; a position detection part for detecting a position of the substrate support in the second axial direction; and an injection control section that individually controls the gas injection of the linear source gas nozzle section and the linear reaction gas nozzle section in accordance with the detected position of the substrate support in the second axial direction.

Description

Technical Field

[0001] The present invention relates to a deposition device and a deposition method, and in particular to a deposition device and a deposition method using a linear deposition source. Background Art

[0002] Spatially separated atomic layer deposition (ALD) technology is used to deposit The precise composition ratio and thickness are adjusted for the unit. In spatially separated atomic layer deposition (ALD), source gas and reaction gas are injected through a linear deposition source including a plurality of linear nozzles so as to be spatially separated from each other to deposit a thin film such as a metal oxide on a substrate.

[0003] In the prior art, spatially separated atomic layer deposition (ALD) is performed by simultaneously injecting gas from a plurality of linear nozzles to scan a substrate. In this case, residual gas may be continuously injected before or after being set to face the substrate, and therefore, the gas consumption may increase, and the gas injected by the linear nozzle that does not face the substrate during scanning of the substrate may be deposited at a location other than the substrate (e.g., a chamber, etc.), thereby contaminating portions other than the substrate. In addition, such contamination may also cause problems with particle generation during the process.

[0004] To solve this limitation, a method has been tried in which baffles are provided at the front and rear ends of the substrate so that the gas injected from the plurality of linear nozzles is deposited only on the baffles outside the substrate. However, there is a problem in that the length of each baffle is increased in size for the chamber for scanning the substrate, and there is still a problem in that the residual gas is continuously injected before being set to face the substrate or after the substrate passes, increasing gas consumption.

[0005] Therefore, a technology is needed to reduce unnecessary gas consumption while minimizing the overall length of the chamber and the footprint of the equipment, and to minimize the contamination of the remaining gas to parts other than the substrate.

[0006] (Patent Document 1) Korean Patent Publication No. 10-2014-0145047 Summary of the invention

[0007] Technical issues

[0008] The present invention provides a deposition apparatus which individually controls gas injection of a linear source gas nozzle part and a linear reaction gas nozzle part according to a position of a substrate support.

[0009] Technical Solutions

[0010] According to one embodiment of the present invention, a deposition device may include: a substrate support for supporting a substrate; a linear deposition source including a linear source gas nozzle component and a linear reaction gas nozzle component, the linear source gas nozzle component and the linear reaction gas nozzle component are arranged to be parallel to each other in a first axial direction intersecting the substrate, and are configured to inject source gas and reaction gas respectively; a driving component configured to move the substrate support in a second axial direction intersecting the first axial direction; a position detection component configured to detect the position of the substrate support in the second axial direction; and an injection control component configured to individually control the gas injection of the linear source gas nozzle component and the linear reaction gas nozzle component according to the detected position of the substrate support in the second axial direction.

[0011] The injection control component can be configured to: control the gas injection of the linear source gas nozzle component so that the source gas is injected when the substrate support passes through the section corresponding to the linear source gas nozzle component; and control the gas injection of the linear reaction gas nozzle component so that the reaction gas is injected when the substrate support passes through the section corresponding to the linear reaction gas nozzle component, wherein the linear source gas nozzle component and the linear reaction gas nozzle component can be individually controlled according to the movement of the substrate support so that the gas injection starts sequentially.

[0012] The substrate support may include edge portions arranged on both sides in the second axial direction, the edge portions are longer than the substrate in the second axial direction, the linear source gas nozzle component is configured to start the injection of source gas when the edge portions on both sides in the second axial direction located on the same side as the moving direction of the substrate support enter the section corresponding to the linear source gas nozzle component, and is configured to terminate the injection of source gas when the edge portions on the opposite side to the moving direction of the substrate support enter the section corresponding to the linear source gas nozzle component, and the linear reaction gas nozzle component is configured to start the injection of reaction gas when the edge portions on both sides in the second axial direction located on the same side as the moving direction of the substrate support enter the section corresponding to the linear reaction gas nozzle component, and is configured to terminate the injection of reaction gas when the edge portions on the opposite side to the moving direction of the substrate support enter the section corresponding to the linear source gas nozzle component.

[0013] The deposition device may also include: a source gas valve arranged in a linear source gas nozzle component; and a reaction gas valve arranged in a linear reaction gas nozzle component, wherein the position detection component may include an encoder configured to output position and speed information of a substrate support, and the injection control component is configured to switch the source gas valve and the reaction gas valve according to the output position and speed information of the substrate support.

[0014] The deposition apparatus may further include: a plasma generating part configured to provide plasma to the linear reaction gas nozzle part; and a plasma controlling part configured to control the plasma generation according to whether the substrate supporter moves.

[0015] The plasma control part may be configured to generate plasma when the substrate supporter moves, and the injection control part may be configured to control gas injection of the linear reaction gas nozzle part according to a position of the substrate supporter in the second axial direction in a state where the plasma is generated.

[0016] The driving component can be configured to allow the substrate support to reciprocate so that the entire area of ​​the substrate passes through the segment corresponding to the linear deposition source, the linear source gas nozzle component can be provided in plurality to respectively supply a plurality of source gases containing different metals, and the deposition device may further include a selection controller configured to select a linear source gas nozzle component to block the source gas from the plurality of linear source gas nozzle components in each scan in which the entire area of ​​the substrate passes through the segment corresponding to the linear deposition source.

[0017] The linear reaction gas nozzle component may include a first and a second reaction gas nozzle component, which are respectively arranged on one side and the other side of the linear deposition source in the second axial direction, so that the linear source gas nozzle component is arranged between them. The deposition equipment may also include a selection controller, which is configured to select the reaction gas nozzle component to block the reaction gas from the first and second reaction gas nozzle components according to the moving direction of the substrate support.

[0018] The selection controller may be configured to block the reaction gas of the second reaction gas nozzle member when the substrate supporter moves to one side of the second axial direction, and to block the reaction gas of the first reaction gas nozzle member when the substrate supporter moves to the other side of the second axial direction.

[0019] The linear deposition source may further include a purge nozzle part disposed parallel to both sides of each of the linear source gas nozzle part and the linear reaction gas nozzle part in the second axial direction to inject a purge gas.

[0020] The deposition method may include: moving a substrate support supporting a substrate so that it passes through a section corresponding to a linear deposition source in a second axial direction intersecting a first axial direction, wherein a linear source gas nozzle component and a linear reaction gas nozzle component are arranged to be parallel to each other in the first axial direction; detecting a position of the substrate support in the second axial direction; and individually controlling gas injection of the linear source gas nozzle component and the linear reaction gas nozzle component according to the detected position of the substrate support in the second axial direction.

[0021] Individually controlling gas injection may include: controlling gas injection of a linear source gas nozzle component so that source gas is injected when a substrate support passes through a section corresponding to the linear source gas nozzle component; controlling gas injection of a linear reaction gas nozzle component so that reaction gas is injected when the substrate support passes through a section corresponding to the linear reaction gas nozzle component, wherein, in individually controlling gas injection, the linear source gas nozzle component and the linear reaction gas nozzle component may be individually controlled according to movement of the substrate support so that gas injection starts sequentially.

[0022] The substrate support may include edge portions arranged on both sides in the second axial direction, the edge portions being longer than the substrate in the second axial direction, wherein controlling the gas injection of the linear source gas may include: when the edge portions on both sides in the second axial direction located on the same side as the moving direction of the substrate support enter the section corresponding to the linear source gas nozzle component, starting the injection of the source gas; when the edge portions on the side opposite to the moving direction of the substrate support enter the section corresponding to the linear source gas nozzle component, terminating the injection of the source gas, wherein controlling the gas injection of the linear reaction gas may include: when the edge portions on both sides in the second axial direction located on the same side as the moving direction of the substrate support enter the section corresponding to the linear reaction gas nozzle component, starting the injection of the reaction gas; when the edge portions on the side opposite to the moving direction of the substrate support enter the section corresponding to the linear reaction gas nozzle component, terminating the injection of the reaction gas.

[0023] Detecting the position may include outputting position and speed information of the substrate supporter using an encoder, and when individually controlling gas injection, the source gas valve of the linear source gas nozzle assembly and the reaction gas valve of the linear reaction gas nozzle assembly may be switched according to the output position and speed information of the substrate supporter.

[0024] The deposition method may further include generating plasma in the linear reaction gas nozzle part when the substrate supporter moves, wherein controlling gas injection of the linear reaction gas nozzle part may be performed according to a position of the substrate supporter in the second axial direction in a state where the plasma is generated.

[0025] A plurality of linear source gas nozzle components may be provided to respectively supply a plurality of source gases containing different metals, and moving the substrate support in the second axial direction may include allowing the substrate support to reciprocate so that the entire area of ​​the substrate passes through a segment corresponding to the linear deposition source, and the deposition method may further include selecting a linear source gas nozzle component to block the source gas from a plurality of linear source gas nozzle components in each scan in which the entire area of ​​the substrate passes through a segment corresponding to the linear deposition source.

[0026] The linear reaction gas nozzle component may include a first and a second reaction gas nozzle component, which are respectively arranged on one side and the other side of the linear deposition source in the second axial direction, so that the linear source gas nozzle component is arranged between them, and the deposition method may also include selecting a reaction gas nozzle component to block the reaction gas from the first and second reaction gas nozzle components according to the moving direction of the substrate support.

[0027] Selecting the reaction gas nozzle part may include selecting the second reaction gas nozzle part when the substrate supporter moves to one side in the second axial direction, and selecting the first reaction gas nozzle part when the substrate supporter moves to the other side in the second axial direction.

[0028] Beneficial effects

[0029] The deposition device according to the embodiment of the present invention can individually control the linear source gas nozzle component and the linear reaction gas nozzle component according to the position of the substrate support detected by the position detection component in the second axial direction, so as to start gas injection in sequence when the substrate reaches (or touches) the position corresponding to the linear source gas nozzle component and the linear reaction gas nozzle component, thereby reducing unnecessary gas consumption that is not injected into the substrate and does not participate in deposition. In addition, the source gas and / or the reaction gas can be suppressed or prevented from being deposited on parts other than the substrate (for example, a chamber, etc.) to minimize contamination outside the substrate, thereby preventing or suppressing particles generated during the process due to contamination. Therefore, the performance degradation of the deposited film due to particles can be prevented or suppressed, and the cleaning of the deposition device can be terminated, or the cleaning cycle to prevent particle generation can be increased to reduce the cleaning cost.

[0030] Here, the edge portion may be longer than the substrate on the substrate supporter in the second axial direction to control the gas injection of the linear source gas nozzle part and the linear reaction gas nozzle part according to the position of the edge portion, thereby ensuring the delay time due to the switching of the source gas valve and the reaction gas valve, and preventing the substrate from passing through (or entering) the section corresponding to the linear source gas nozzle part and / or the linear reaction gas nozzle part before the start of gas injection due to the delay time. In addition, even when the gas injection is terminated, the gas may be injected into the edge portion of the substrate supporter within the delay time to prevent the residual gas from diffusing to other places and induce the residual gas to flow to the extraction hole, thereby exhausting the residual gas to the extraction hole. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] Figure 1 is a schematic cross-sectional view of a deposition apparatus according to an embodiment of the present invention.

[0032] Figure 2 1 is a conceptual diagram for explaining sequential gas injection of a linear source gas nozzle part and a linear reaction gas nozzle part according to an embodiment of the present invention.

[0033] Figure 3 is a flow chart illustrating a deposition method according to another embodiment of the present invention. DETAILED DESCRIPTION

[0034] Below, specific embodiments will be described in more detail with reference to the accompanying drawings. However, the present invention may be embodied in different forms and should not be construed as being limited to the embodiments described herein. Specifically, these embodiments are provided to make the present invention thorough and complete and to fully convey the scope of the present invention to those skilled in the art. In the description, the same elements are represented by the same reference numerals. In the figures, the sizes of layers and regions are magnified for clarity of description. Similar reference numerals refer to similar elements throughout the text.

[0035] Figure 1 is a schematic cross-sectional view of a deposition apparatus according to an embodiment of the present invention.

[0036] Reference Figure 1 According to an embodiment of the present invention, a deposition device (100) may include: a substrate support (110) supporting a substrate (10); a linear deposition source (120), including a linear source gas nozzle component (121) and a linear reaction gas nozzle component (122), the linear source gas nozzle component (121) and the linear reaction gas nozzle component (122) being arranged parallel to each other in a first axial direction intersecting the substrate (10), and being configured to respectively inject each of a source gas and a reaction gas onto the substrate (10); a driving component (130), moving the substrate support (110) in a second axial direction intersecting the first axial direction; a position detection component (140), detecting a position of the substrate support (110) in the second axial direction; and an injection control component (151), individually controlling the gas injection of the linear source gas nozzle component (121) and the linear reaction gas nozzle component (122) according to the detected position of the substrate support (110) in the second axial direction.

[0037] The substrate supporter (110) can support the substrate (10) and can be moved relative to the linear source gas nozzle part (121) and the linear reaction gas nozzle part (122) by being driven by the driving part (130) to inject the source gas and the reaction gas into the entire area of ​​the substrate (10).

[0038] The linear deposition source (120) may include a linear source gas nozzle part (121) and a linear reaction gas nozzle part (122), the linear source gas nozzle part (121) and the linear reaction gas nozzle part (122) are arranged in parallel in a first axial direction intersecting the substrate (10), and the source gas and the reaction gas may be injected onto the substrate (10) through the linear source gas nozzle part (121) and the linear reaction gas nozzle part (122), respectively. The linear source gas nozzle part (121) may extend along the first axial direction, and may inject the source gas supplied from the source gas supply part (not shown) to deposit the source material (layer) on the substrate (10) in units of atomic layers.

[0039] In addition, the linear reaction gas nozzle part (122) may extend along a first axial direction and may be arranged in parallel with the linear source gas nozzle part (121) along the first axial direction, wherein a second axial direction intersects with the first axial direction of the linear source gas nozzle part (121), and may deposit a reaction material (layer) in units of atomic layers on the substrate (10) by injecting a reaction gas supplied from a reaction gas supply part (not shown). Here, the source material (layer) and the reaction material (layer) may react to form a thin film.

[0040] Here, the deposition apparatus (100) of the present invention may further include: a chamber (not shown) providing a space for deposition, and the substrate supporter (110) and the linear deposition source (120) may be arranged in the chamber (not shown) so as to perform a deposition process in the chamber (not shown).

[0041] The driving component (130) can move the substrate supporter (110) in a second axial direction intersecting the first axial direction, and can pass through a section corresponding to the linear deposition source (120). For example, the driving component (130) can be connected to the substrate supporter (110), and can move the substrate supporter (110) in the second axial direction, so that the substrate supporter (110) moves relative to the linear source gas nozzle component (121) and the linear reaction gas nozzle component (122) in the second axial direction. Here, the driving component (130) can move the substrate supporter (110) in the second axial direction to deposit the source gas and the reaction gas in units of atomic layers on the entire area of ​​the substrate (10), and can alternately stack the source material (layer) and the reaction material (layer) in units of atomic layers, and the source material and the reaction material can react to form a thin film.

[0042] Here, the driving member (130) may include: a guide rail (131); and a moving member (132) connected to the substrate supporter (110) to move along the guide rail (131). The guide rail (131) may extend along the second axial direction and provide a moving path for the moving member (132).

[0043] The moving member (132) may be connected to the substrate support (110) and may move the connected substrate support (110) while moving along the guide rail (131). Here, the moving member (132) may receive power through a separate power supply (not shown), or may be a linear motor with an integrated power supply. The configuration of the driving member (130) is not limited thereto as long as the substrate support (110) can be moved in the second axial direction.

[0044] The position detection component (140) can detect (or identify) the position of the substrate supporter (110) in the second axial direction, and transmit the detected position of the substrate supporter (110) in the second axial direction to the injection control component (151). Here, the position detection component (140) can detect the position of the substrate supporter (110) in the second axial direction by various methods such as a sensor.

[0045] The injection control part (151) can individually control the gas injection of the linear source gas nozzle part (121) and the linear reaction gas nozzle part (122) according to the detected (identified) position of the substrate supporter (110) in the second axial direction. For example, the injection control part (151) can control the gas injection of the linear source gas nozzle part (121) and the linear reaction gas nozzle part (122) by turning on / off the gas injection, and can determine the start and end of the gas injection according to the nozzle part (121 or 122) of the linear source gas nozzle part (121) and the linear reaction gas nozzle part (122) through which the substrate supporter (110) passes.

[0046] When the substrate support (110) passes through a section corresponding to the linear source gas nozzle component (121), the injection control component (151) can control the gas injection of the linear source gas nozzle component (121) to inject the source gas, and when the substrate support (110) passes through a section corresponding to the linear reaction gas nozzle component (122), the gas injection of the linear reaction gas nozzle component (122) can be controlled to inject the reaction gas.

[0047] That is, the injection control part (151) can control the gas injection of the linear source gas nozzle part (121) according to the position of the substrate supporter (110) in the second axial direction, so as to inject the source gas when the substrate supporter (110) and / or the substrate (10) passes through the section corresponding to the linear source gas nozzle part (121). Therefore, the source gas can be injected (only) when the substrate (10) and / or the substrate supporter (110) is arranged to face the linear source gas nozzle part (121), and the source gas can be deposited (maximally) on (only) the substrate (10).

[0048] In addition, the injection control component (151) can control the gas injection of the linear reaction gas nozzle component (122) according to the position of the substrate support (110) in the second axial direction. When the substrate support (110) and / or the substrate (10) pass through the section corresponding to the linear reaction gas nozzle component (122), the reaction gas can be injected. The reaction gas can (only) be injected when the substrate (10) and / or the substrate support (110) are arranged opposite to the linear reaction gas nozzle component (122). The reaction gas can be (to the greatest extent) deposited on (only) the substrate (10).

[0049] Here, the linear source gas nozzle part (121) and the linear reaction gas nozzle part (122) can be individually controlled by the injection control part (151) according to the movement of the substrate supporter (110) to start (or open) gas injection in sequence. Therefore, when the substrate (10) and / or the substrate supporter (110) are arranged opposite to (or corresponding to) the linear source gas nozzle part (121), the source gas can be injected, and when the substrate (10) and / or the substrate supporter (110) are arranged opposite to the linear reaction gas nozzle part (122), the reaction gas can be injected, thereby reducing unnecessary gas consumption that is not injected onto the substrate (10) and does not participate in deposition (reaction).

[0050] In addition, since the source gas and / or the reaction gas are injected only onto the substrate (10) and / or the substrate support (110), the deposition of the source gas and / or the reaction gas on the parts other than the substrate (10) and / or the substrate support (110) (e.g., the chamber and the driving parts, etc.) can be suppressed or prevented. Therefore, the contamination of the parts other than the substrate (10) and / or the substrate support (110) caused by the deposition of the source gas and / or the reaction gas can be minimized, and the generation of particles (during the process) caused by the peeling of the contaminants deposited on the parts other than the substrate (10) and / or the substrate support (110) can be prevented or suppressed. The linear source gas nozzle part (121) and the linear reaction gas nozzle part (122) can be individually controlled by the injection control part (151) according to the movement of the substrate support (110) to terminate (or close) the gas injection in sequence.

[0051] Therefore, the deposition apparatus (100) according to the present invention can individually control the gas injection of the linear source gas nozzle part (121) and the linear reaction gas nozzle part (122) according to the position of the substrate support (110) in the second axial direction detected by the position detection part (140), so as to start the gas injection in sequence when the substrate (10) and / or the substrate support (110) arrives (or reaches) the position corresponding to (or opposite to) the linear source gas nozzle part (121) and the linear reaction gas nozzle part (122). Therefore, it is possible to reduce unnecessary gas consumption that is not injected into the substrate (10) and does not participate in deposition, and to suppress or prevent the source gas and / or the reaction gas from being deposited on the portion other than the substrate (10) and / or the substrate support (110), thereby minimizing the contamination of the portion other than the substrate (10) and / or the substrate support (110) due to the deposition of the source gas and / or the reaction gas. Therefore, the generation of particles due to the peeling of contaminants deposited on the substrate (10) and / or the substrate support (110) other than the substrate can be prevented or suppressed, and the performance degradation of the deposited film due to the particles can be prevented or suppressed. In addition, it is not necessary to clean the deposition device (100) (such as a chamber (not shown)), or the cleaning cycle for preventing the generation of particles can be increased, thereby reducing the cleaning cost.

[0052] Figure 2 1 is a conceptual diagram for explaining sequential gas injection of a linear source gas nozzle assembly and a linear reaction gas nozzle assembly according to an embodiment of the present invention, wherein Figure 2 (a) shows the substrate supporter entering the section corresponding to the linear deposition source, Figure 2 (b) shows the movement of the substrate support in the section corresponding to the linear deposition source, Figure 2 (c) shows that the substrate supporter is separated from the section corresponding to the linear deposition source.

[0053] Reference Figure 2 The substrate supporter (110) may include an edge portion (110a) that is longer on both sides in the second axial direction than the substrate (10) in the second axial direction. The edge portion (110a) may be provided on both sides in the second axial direction of the substrate supporter (110) that is longer in the second axial direction than the substrate (10), and one of the two sides in the second axial direction may enter the section corresponding to the linear deposition source (120) earlier than the substrate (10), while the other side (or the opposite side) may be separated (or deviated) from the section corresponding to the linear deposition source (120) later than the substrate (10).

[0054] Here, when the edge portion (110a) on the same side as the moving direction of the substrate supporter (110) on both sides in the second axial direction enters the section corresponding to the linear source gas nozzle part (121), the linear source gas nozzle part (121) can start (or open) the injection of the source gas, and when the edge portion (110a) located on the opposite side to the moving direction of the substrate supporter (110) enters the section corresponding to the linear source gas nozzle part (121), the injection of the source gas ends (or closes). Ideally, the injection of the source gas through the linear source gas nozzle part (121) should be performed immediately when it is opened and blocked immediately when it is closed, but switching of the gas valve etc. takes time, and even after opening / closing, it takes a certain time to achieve stable gas injection and complete blocking.

[0055] Therefore, when the substrate (10) enters the section corresponding to the linear source gas nozzle part (121), the source gas can be injected so that no part of the substrate (10) passes through the section corresponding to the linear source gas nozzle part (121) without the source gas being injected. When the edge portion (110a) on the same side as the moving direction of the substrate supporter (110) enters the section corresponding to the linear source gas nozzle part (121), the injection of the source gas can be started. In addition, when the edge portion (110a) located on the side opposite to the moving direction of the substrate supporter (110) enters the section corresponding to the linear source gas nozzle part (121), the substrate (10) may not be completely separated from the section corresponding to the linear source gas nozzle part (121), and the injection of the source gas may be terminated before the substrate (10) is completely separated from the section corresponding to the linear source gas nozzle part (121), thereby preventing the substrate supporter (110) from being separated from the section corresponding to the linear source gas nozzle part (121) before the gas injection (i.e., the injection of the source gas) is blocked. Therefore, the source gas can be prevented from being deposited on portions other than the substrate (10) and / or the substrate supporter (110). Here, the length of the edge portion (110a) in the second axial direction can be determined as the edge portion (110a) on the same side as the moving direction of the substrate support (110) enters the section corresponding to the linear source gas nozzle component (121) and starts to inject source gas, the source gas is deposited from the front end of the substrate (10), and no part of the substrate (10) passes through the section corresponding to the linear source gas nozzle component (121) within a predetermined time without performing source gas deposition, and after the edge portion (110a) located on the opposite side to the moving direction of the substrate support (110) enters the section corresponding to the linear source gas nozzle component (121) and ends the injection of source gas, the length of the section corresponding to the linear source gas nozzle component (121) is not completely exceeded within the predetermined time of the above-mentioned blocking gas injection.

[0056] Here, when the edge portion (110a) on the same side as the moving direction of the substrate supporter (110) on both sides in the second axial direction enters the section corresponding to the linear reaction gas nozzle part (122), the linear reaction gas nozzle part (122) can start injecting the reaction gas, and when the edge portion (110a) located on the side opposite to the moving direction of the substrate supporter (110) enters the section corresponding to the linear reaction gas nozzle part (122), the injection of the reaction gas can be terminated. Similarly, when the substrate (10) enters the section corresponding to the linear reaction gas nozzle part (122), the reaction gas can be injected so that no part of the substrate (10) passes through the section corresponding to the linear reaction gas nozzle part (122) without the injection of the reaction gas. When the edge portion (110a) on the same side as the moving direction of the substrate supporter (110) enters the section corresponding to the linear reaction gas nozzle part (122), the injection of the reaction gas can be started. In addition, when the edge portion (110a) located on the opposite side to the moving direction of the substrate support (110) enters the section corresponding to the linear reaction gas nozzle component (122), the substrate (10) may not have been completely separated from the section corresponding to the linear reaction gas nozzle component (122), and the injection of the reaction gas may be terminated before the substrate (10) is completely separated from the section corresponding to the linear reaction gas nozzle component (122), thereby preventing the substrate support (110) from being separated from the section corresponding to the linear reaction gas nozzle component (122), and before the gas injection (i.e., the injection of the reaction gas) is blocked, the reaction gas may be deposited on portions other than the substrate (10) and / or the substrate support (110). At this time, the length of the edge portion (110a) in the second axial direction can be appropriately determined as the edge portion (110a) on the same side as the moving direction of the substrate support (110) enters the section corresponding to the linear reaction gas nozzle component (122) and starts to inject reaction gas, the reaction gas is deposited from the front end of the substrate (10), and no part of the substrate (10) passes through the section corresponding to the linear reaction gas nozzle component (122) within a predetermined time without performing reaction gas deposition, and after the edge portion (110a) located on the opposite side to the moving direction of the substrate support (110) enters the section corresponding to the linear reaction gas nozzle component (122) and ends the injection of reaction gas, the length of the section corresponding to the linear reaction gas nozzle component (122) is not completely exceeded within the predetermined time of the above-mentioned blocking gas injection.

[0057] The deposition apparatus (100) according to the present invention may further include: a source gas valve (not shown) disposed in the linear source gas nozzle part (121); and a reaction gas valve (not shown) disposed in the linear reaction gas nozzle part (122).

[0058] A source gas valve (not shown) may be provided in the linear source gas nozzle component (121), and may open / close the injection of the source gas to allow the source gas to be injected, or block the injection of the source gas. For example, the source gas valve (not shown) may be installed in a source gas pipe (not shown) connecting the source gas supply component (not shown) and the linear source gas nozzle component (121) to transmit (or supply) the source gas from the source gas supply component (not shown) to the linear source gas nozzle component (121), thereby allowing or blocking the supply of the source gas to the linear source gas nozzle component (121), and allowing or blocking the flow of the source gas in the linear source gas nozzle component (121). Here, when the source gas valve (not shown) is switched from closed (or closed) to open (or opened), a predetermined time may be required until the source gas is (stably) injected, and when it is switched from open to closed, a predetermined time may be required until the source gas is (completely) blocked.

[0059] A reaction gas valve (not shown) may be provided in the linear reaction gas nozzle component (122), and may open / close the injection of the reaction gas to allow the reaction gas to be injected, or block the injection of the reaction gas. For example, the reaction gas valve (not shown) may be installed in a reaction gas pipe (not shown) connecting the reaction gas supply component (not shown) and the linear reaction gas nozzle component (122) to transmit (or supply) the reaction gas from the reaction gas supply component (not shown) to the linear reaction gas nozzle component (122), thereby allowing or blocking the supply of the reaction gas to the linear reaction gas nozzle component (122), and allowing or blocking the flow of the reaction gas in the linear reaction gas nozzle component (122). Here, when the reaction gas valve (not shown) is switched from closed to open, a predetermined time may be required until the reaction gas is (stably) injected, and when it is switched from open to closed, a predetermined time may be required until the reaction gas is (completely) blocked.

[0060] In addition, the position detection component (140) may include an encoder that outputs the position and speed information of the substrate support (110). The encoder may output the position and speed information of the substrate support (110), and may output the position and speed information of the substrate support (110) as an electrical signal. For example, the encoder may be mainly attached to a motor to read the position of the motor, and may detect the rotation speed, rotation amount, and rotation direction of the motor. The encoder may be provided as a linear encoder and attached to the substrate support (110) or the moving component (132), and used like a ruler with a precise grid scale, so that the sensor reads pulses when passing through the scale and converts the pulses into a linear movement distance.

[0061] Here, the injection control part (151) can switch the source gas valve (not shown) and the reaction gas valve (not shown) according to the output position and speed information of the substrate supporter (110). In the case where the source gas valve (not shown) and the reaction gas valve (not shown) are switched according to the position and speed information of the substrate supporter (110) output by the injection control part (151), the source gas valve (not shown) and the reaction gas valve (not shown) are switched using a delay time according to the switching of the source gas valve (not shown) and the reaction gas valve (not shown) and the (moving) speed of the substrate supporter (110) to allow the source gas and the reaction gas to be deposited from the front end of the substrate (10) to the end (or rear end) of the substrate (10), thereby being deposited on the entire (surface) of the substrate (10).

[0062] That is, when the source gas valve (not shown) is opened / closed (or opened / closed) to inject and block the source gas, and the reaction gas valve (not shown) is opened / closed to inject and block the reaction gas, a delay time may occur according to the switching (or opening / closing), and when the substrate (10) (i.e., the front end of the substrate) enters the section corresponding to the linear source gas nozzle component (121) or the section corresponding to the linear reaction gas nozzle component (122), when the source gas valve (not shown) or the reaction gas valve (not shown) is opened, a portion where the source gas or reaction gas is not deposited may appear at the front end of the substrate (10) during the delay time. Therefore, when the edge portion (110a) on the same side as the moving direction of the substrate support (110) enters (or enters after) the section corresponding to the linear source gas nozzle component (121) or the section corresponding to the linear reaction gas nozzle component (122), the source gas valve (not shown) or the reaction gas valve (not shown) can be opened to start (or start) the injection of the source gas or the reaction gas, and at least when the substrate (10) enters the section corresponding to the linear source gas nozzle component (121) or the section corresponding to the linear reaction gas nozzle component (122), the injection of the source gas or the reaction gas can be performed (or is being performed) so that the source gas or the reaction gas is deposited from the front end of the substrate (10).

[0063] Here, the portion (or length) of the edge portion (110a) on the same side as the moving direction of the substrate support (110), which serves as an opening criterion for a source gas valve (not shown) or a reaction gas valve (not shown) depending on whether the section corresponding to the linear source gas nozzle component (121) or the section corresponding to the linear reaction gas nozzle component (122) has been entered, can be appropriately determined by calculating using a delay time and the speed of the substrate support (110) so that the source gas or reaction gas is not injected into the edge portion (110a) on the same side as the moving direction of the substrate support (110), but is deposited starting from the front end of the substrate (10).

[0064] Since the injection of the source gas and the reaction gas becomes unstable after the source gas valve (not shown) and the reaction gas valve (not shown) are closed, when (or after) the edge portion (110a) located on the opposite side to the moving direction of the substrate supporter (110) (where the end of the substrate (10) deviates from the section corresponding to the linear source gas nozzle part (121) or the section corresponding to the linear reaction gas nozzle part (122)) enters the section corresponding to the linear source gas nozzle part (121) or the section corresponding to the linear reaction gas nozzle part (122), the source gas valve (not shown) and the reaction gas valve (not shown) can be closed to allow the source gas and the reaction gas to be stably and uniformly deposited on the entire surface of the substrate (10). Therefore, the source gas and the reaction gas can be stably and uniformly deposited on the entire surface of the substrate (10). Here, the edge portion (110a) located on the opposite side to the moving direction of the substrate support (110) can enter the section corresponding to the linear source gas nozzle component (121) or the section corresponding to the linear reaction gas nozzle component (122) to prevent or inhibit the source gas and / or reaction gas injected during the delay time from diffusing to other locations (locations other than the substrate and / or substrate support) and prevent or inhibit deposition on portions other than the substrate (10) and / or the substrate support (110).

[0065] Here, the linear deposition source (120) may further include an exhaust hole (125) disposed between the linear source gas nozzle component (121) and the linear reaction gas nozzle component (122). The exhaust hole (125) may be disposed between the linear source gas nozzle component (121) and the linear reaction gas nozzle component (122) to evacuate the interior of a chamber (not shown) and exhaust residual gas (or residual gas and / or byproducts), such as source gas and reaction gas that are not deposited on the substrate (10). In the presence of the exhaust hole (125), the edge portion (110a) of the substrate supporter (110) may prevent the diffusion of the residual gas and induce the residual gas to flow toward the exhaust hole (125), and the residual gas may be exhausted to the exhaust hole (125) and prevented from being deposited on a portion other than the substrate (10). Here, the exhaust hole (125) may be connected to a suction pump (e.g., a vacuum pump), and the residual gas may be sucked into the suction pump and exhausted therefrom.

[0066] Therefore, the deposition apparatus (100) according to the present invention may provide a frame (110a) on the substrate support (110) that is longer than the substrate (10) in the second axial direction to control the gas injection of the linear source gas nozzle (121) and the linear reaction gas nozzle (122) according to the position of the frame (110a), thereby ensuring the delay time according to the switching of the source gas valve (not shown) and the reaction gas valve (not shown). In addition, due to the delay time, it is possible to prevent the substrate (10) from passing through (or entering) the section corresponding to the linear source gas nozzle part (121) and / or the linear reaction gas nozzle part (122) before the gas injection starts. In addition, even when the gas injection is terminated, the gas can be injected into the edge portion (110a) of the substrate support (110) within the delay time, and the remaining gas can be prevented from diffusing to other locations, and the flow of the remaining gas can be induced toward the exhaust hole (125) to be discharged through the exhaust hole (125).

[0067] The deposition apparatus (100) according to the present invention may further include a plasma generating component (160) for providing plasma to the linear reaction gas nozzle component (122); and a plasma controlling component (152) for controlling the generation of plasma according to whether the substrate supporter (110) moves.

[0068] The plasma generating part (160) may provide plasma to the linear reaction gas nozzle part (122) and excite the reaction gas to generate a radical state. Therefore, the reaction gas in the radical state may be injected from the linear reaction gas nozzle part (122).

[0069] Here, the plasma generating part (160) may generate plasma in the linear reaction gas nozzle part (122), or may generate plasma between the linear reaction gas nozzle part (122) and the substrate supporter (110). For example, the plasma generating part (160) may include: an electrode part (161); and a power supply part (not shown) for applying a voltage to the electrode part (161) to generate plasma. The electrode part (161) may be provided as a pair of opposing electrodes in the linear reaction gas nozzle part (122) to generate plasma in the linear reaction gas nozzle part (122), or one electrode may be provided in the linear reaction gas nozzle part (122) to face the substrate supporter (110), thereby generating plasma between the linear reaction gas nozzle part (122) and the substrate supporter (110) and generating a potential difference (or voltage difference) relative to the substrate supporter (110).

[0070] A power supply part (not shown) may apply a voltage to the electrode part (161), and thus, the voltage may be applied to generate a potential difference at the electrode part (161), thereby generating plasma.

[0071] The plasma control part (152) can control the generation of plasma according to whether the substrate supporter (110) moves, can turn on / off the plasma, and can generate plasma when the deposition process is performed by moving the substrate supporter (110). Here, the on / off timing of the plasma can be different from the on / off timing of the reaction gas (reaction gas valve), and the on / off of the plasma can be performed at different times from the on / off of the reaction gas.

[0072] For example, when the substrate support (110) moves to perform a deposition process, regardless of whether the substrate support (110) and / or the substrate (10) face the linear reaction gas nozzle component (122), the plasma can be continuously turned on (or generated), and the reaction gas can be turned on (or injected) only when the substrate support (110) and / or the substrate (10) face the linear reaction gas nozzle component (122) according to the position of the substrate support (110) in the second axial direction.

[0073] That is, the plasma control component (152) can generate plasma when the substrate supporter (110) moves, and the injection control component (151) can control the gas injection of the linear reaction gas nozzle component (122) according to the position of the substrate supporter (110) in the second axial direction in the state of plasma generation.

[0074] Since the plasma requires a relatively long time to stabilize after the voltage is applied to the electrode part (161) and turned on, the substrate (10) may pass through the area corresponding to the linear reaction gas nozzle part (122), or the edge portion (110a) of the substrate supporter (110) may become longer to prevent the substrate from passing before the plasma is stabilized. Therefore, there may be a problem that the length of the chamber (not shown) for scanning the substrate (10) in the second axial direction becomes longer. Therefore, the plasma may be turned on when the substrate supporter (110) starts to move to perform a deposition process, and turned off when the substrate supporter (110) stops moving to end the deposition process.

[0075] Here, in order to prevent unnecessary deposition of reaction gas and gas consumption, the gas injection of the linear reaction gas nozzle component (122) can be controlled according to the position of the substrate support (110) in the second axial direction, and when the edge portion (110a) on the same side as the moving direction of the substrate support (110) on both sides in the second axial direction enters the area corresponding to the linear reaction gas nozzle component (122), the injection of reaction gas can be started, and when the edge portion (110a) located on the opposite side to the moving direction of the substrate support (110) enters the area corresponding to the linear reaction gas nozzle component (122), the injection of reaction gas can be terminated, so that the reaction gas is injected only when the substrate support (110) and / or the substrate (10) face the linear reaction gas nozzle component (122).

[0076] Therefore, when the plasma control component (152) starts to move the substrate support (110) to perform a deposition process, plasma can be generated (or turned on) to generate stable plasma when the substrate (10) enters the area corresponding to the linear reaction gas nozzle component (122), and in the state of generating stable plasma, the gas injection of the linear reaction gas nozzle component (122) can be controlled according to the position of the substrate support (110) in the second axial direction to stably inject the reaction gas in a free radical state from the linear reaction gas nozzle component (122) into the substrate (10).

[0077] The driving part (130) can allow the substrate supporter (110) to reciprocate so that the entire area of ​​the substrate (10) passes through the area corresponding to the linear deposition source (120), and the linear source gas nozzle part (121) can be provided in plurality, so that a plurality of source gases containing different metals can be supplied respectively. The driving part (130) can allow the entire area of ​​the substrate (10) to pass through the area corresponding to the linear deposition source (120), so that a thin film (or a source material (layer) and a reaction material (layer)) is deposited on the entire area of ​​the substrate (10), and the entire area of ​​the substrate (10) can deviate (or pass) from the area corresponding to the linear deposition source (120) so that the thin film is uniformly deposited on the entire area of ​​the substrate (10). In addition, the driving part (130) can allow the substrate supporter (110) to reciprocate, and the material layer (or the source material (layer) and the reaction material (layer)) can be stacked multiple times on the entire area of ​​the substrate (10) to form (or deposit) a thin film having a desired thickness on the substrate (10).

[0078] A plurality of linear source gas nozzle parts (121) may be provided, and a plurality of source gases containing different metals may be supplied respectively. Here, the linear source gas nozzle parts (121) and the linear reaction gas nozzle parts (122) may be alternately provided in the second axial direction.

[0079] For example, different source gases may be supplied and injected into the plurality of linear source gas nozzle parts (121a, 121b, and 121c), respectively, so that a multi-component (e.g., In / Ga / Zn) atomic layer may be deposited, and a composite metal oxide or nitride such as IGZO (In / Ga / Zn oxide) may be deposited. Here, source gases containing different metals may be supplied to the linear source gas nozzle parts (121a, 121b, and 121c), respectively.

[0080] Here, the linear source gas nozzle component (121) and the linear reaction gas nozzle component (122) can be alternately arranged in the second axial direction, and a plurality of linear source gas nozzle components (121a, 121b and 121c) and at least one linear reaction gas nozzle component (122) can be alternately arranged with each other, and can also be alternately arranged according to a specific ratio. For example, when there is one linear reaction gas nozzle component (122), there can be two linear source gas nozzle components (121), the two linear source gas nozzle components (121a and 121b) can be respectively arranged on both sides of the linear reaction gas nozzle component (122) in the second axial direction (12), and one linear reaction gas nozzle component (122) can be arranged between the two linear source gas nozzle components (121a and 121b). Furthermore, even if there are two linear reaction gas nozzle parts (122), there may be two linear source gas nozzle parts (121), and the linear source gas nozzle parts (121) and the linear reaction gas nozzle parts (122) may be alternated one by one, so that the linear source gas nozzle part (121a) may be arranged on one side of the linear deposition source (120) in the second axial direction (12), and the linear reaction gas nozzle part (122) may be arranged on the other side of the linear deposition source (120) in the second axial direction (12). Furthermore, even if there are three linear reaction gas nozzle parts (122), there may be two linear source gas nozzle parts (121), and the two linear source gas nozzle parts (121a and 121b) may be arranged between the three linear reaction gas nozzle parts (122), respectively, and the linear reaction gas nozzle parts (122) may be arranged on both sides of the linear source gas nozzle parts (121a and 121b) in the second axial direction (12).

[0081] Here, the source gas may include a metal organic compound, and the reaction gas may include oxygen atoms O. The source gas may include a metal, may be an organic source, or may include an organic metal compound. In addition, the reaction gas may include oxygen atoms O, may be oxygen (O2), and may react with the source gas to form an oxide film. For example, the linear source gas nozzle component (121) and the linear reaction gas nozzle component (122) may respectively inject a source gas of an organic metal compound and a reaction gas of oxygen (O2) into the substrate (10) to deposit an oxide. Here, different source gases may be injected from a plurality of linear source gas nozzle components (121a, 121b, and 121c) to deposit a composite metal oxide or nitride such as IGZO, and an oxide thin film transistor (oxide TFT) may also be manufactured using the composite metal oxide as a channel layer. Here, the linear reaction gas nozzle component (122) may provide (or generate) plasma to activate oxygen (O2) and cause a reaction material (or reaction gas) such as oxygen radicals (O2) to react with a source material (layer).

[0082] In addition, a plurality of source gases containing different metals may be supplied to the plurality of linear source gas nozzle parts (121a, 121b, and 121c), respectively. Here, a source gas supply part (not shown) may supply one (one type) of source gas selected from two or more source gases containing different metals to each of the plurality of linear source gas nozzle parts (121a, 121b, and 121c), and each source gas for depositing the composite metal oxide may be supplied to at least one of the plurality of linear source gas nozzle parts (121a, 121b, and 121c). That is, one of the plurality of (two or more) source gases may be supplied to each of the linear source gas nozzle parts (121a, 121b, and 121c).

[0083] For example, each of the plurality of linear source gas nozzle parts (121a, 121b, and 121c) may inject source gases containing different metals to deposit a multi-component atomic layer such as indium (In), gallium (Ga), and zinc (Zn), thereby depositing a composite metal oxide or nitride such as IGZO. Here, when the composite metal oxide is used for an oxide thin film transistor TFT, a high-quality channel layer may be obtained in the oxide thin film transistor TFT.

[0084] In addition, the source gas supply part (not shown) may be provided in plurality and respectively connected to different linear source gas nozzle parts (121a, 121b or 121c) among the plurality of linear source gas nozzle parts (121a, 121b and 121c), and the plurality of source gas supply parts (not shown) may respectively supply source gases containing different metals to the connected linear source gas nozzle parts (121a, 121b or 121c). The source gas supply part (not shown) may also be provided in plurality according to the plurality of linear source gas nozzle parts (121a, 121b and 121c), and each of the plurality of source gas supply parts (not shown) may be connected to different linear source gas nozzle parts (121a, 121b or 121c) among the plurality of linear source gas nozzle parts (121a, 121b and 121c).

[0085] In addition, a plurality of source gas supply parts (not shown) may supply source gases containing different metals to the connected linear source gas nozzle parts (121a, 121b, and 121c), respectively. Therefore, the linear source gas nozzle parts (121a, 121b, and 121c) may inject source gases containing different metals and perform a multi-component atomic layer deposition (ALD) process. By depositing a multi-component atomic layer through the multi-component atomic layer deposition (ALD) process, a composite metal oxide or nitride may be deposited.

[0086] The number of source gas supply parts (not shown) and the number of linear source gas nozzle parts (121) may be three each, and one source gas supply part (not shown) may be connected to each linear source gas nozzle part (121a, 121b, and 121c). A source gas containing a first metal (e.g., Ga) may be supplied to one (121a) of the three linear source gas nozzle parts (121a, 121b, and 121c), a source gas containing a second metal (e.g., Zn) may be supplied to another (121b) of the three linear source gas nozzle parts (121a, 121b, and 121c), and a source gas containing a third metal (e.g., In) may be supplied to the remaining one (121c) of the three linear source gas nozzle parts (121a, 121b, and 121c). When oxygen (O2) is used as a reaction gas, three linear source gas nozzles (121a, 121b, and 121c) can respectively inject a source gas containing a first metal, a source gas containing a second metal, and a source gas containing a third metal into the substrate (10), thereby depositing a composite metal oxide by stacking atomic layers of the first metal, the second metal, and the third metal. Here, when the first metal, the second metal, and the third metal are indium (In), gallium (Ga), and zinc (Zn), respectively, a composite metal oxide of IGZO can be deposited.

[0087] Here, the deposition device (100) according to the present invention may also include a selection controller (153) which selects a linear source gas nozzle component (121) to block the source gas from a plurality of linear source gas nozzle components (121) in each scan of the entire area of ​​the substrate (10) through a segment corresponding to the linear deposition source (120).

[0088] The selection controller (153) can select a linear source gas nozzle part (121) to block the source gas from among the plurality of linear source gas nozzle parts (121) in each scan of the entire area of ​​the substrate (10) passing through the section corresponding to the linear deposition source (120). Therefore, the plurality of source gases can be selectively deposited on the substrate (10), and the composition (i.e., the ratio of the composite metal) in the composite metal oxide and the composite metal nitride can be controlled (or adjusted).

[0089] For example, in a case where the driving part (130) allows the substrate support (110) to reciprocate to perform a deposition process, when all source gases are deposited through a first scan in which the substrate support (110) is moved to one side of the second axial direction, and then a second scan to the other side of the second axial direction is immediately performed, the source gas deposited last (or topmost) in the first scan may be deposited first again in the second scan and overlap with each other, the proportion of the composite metal may change in the thickness direction (or at each height) of the film, and the amount (or proportion) of each metal in the film may change.

[0090] Therefore, after depositing all the plurality of source gases in the first scan, the source gases are sequentially deposited one by one in the second scan, the source gas deposited last in the first scan may be blocked, and only the remaining source gas is deposited, and in the third scan, the source gas deposited last in the second scan may be blocked, and only the remaining source gas is deposited. In the nth scan, the source gas deposited last in the (n-1)th scan may be blocked, and only the remaining source gas is deposited, and in this way, a thin film (or source material (layer)) may be deposited up to the nth scan.

[0091] Here, the selection controller (153) may select the linear source gas nozzle component (121) that injected the most recently deposited source gas in the previous scan (or the (n-1)th scan) to block the source gas in this scan (or the nth scan), and may select the linear source gas nozzle component (121) that injected the most recently deposited source gas in the previous scan in each scan in which the entire area of ​​the substrate (10) passes through the segment corresponding to the linear deposition source (120).

[0092] The method of selecting the linear source gas nozzle part (121) for blocking the source gas by the selection controller (153) is not limited thereto, and may be appropriately determined according to the composition and / or deposition structure of the composite metal oxide and composite metal nitride to be deposited.

[0093] The linear reaction gas nozzle part (122) may include first and second reaction gas nozzle parts (122a and 122b), which are respectively arranged on one side and the other side of the linear deposition source (120) in the second axial direction, so that the linear source gas nozzle part (121) is located therebetween. The first reaction gas nozzle part (122a) may be arranged on one side of the linear deposition source (120) in the second axial direction, and when the substrate supporter (110) moves to one side of the second axial direction to perform scanning, the reaction gas may be injected (or deposited) last, and when the substrate supporter (110) moves to the other side of the second axial direction to perform scanning, the reaction gas may be injected first.

[0094] The second reaction gas nozzle component (122b) can be arranged on the other side of the linear deposition source (120) in the second axial direction, and when the substrate support (110) moves to the other side of the second axial direction to perform scanning, the reaction gas can be injected last, and when the substrate support (110) moves to one side of the second axial direction to perform scanning, the reaction gas can be injected first.

[0095] Here, the linear source gas nozzle component (121) may be disposed between the first reaction gas nozzle component (122a) and the second reaction gas nozzle component (122b). When the linear source gas nozzle component (121) is provided in plurality, all the plurality of linear source gas nozzle components (121) may be disposed between the first reaction gas nozzle component (122a) and the second reaction gas nozzle component (122b). Here, the linear reaction gas nozzle component (122) may further include a third reaction gas nozzle component (122c) disposed between the plurality of linear source gas nozzle components (121). There may be at least one third reaction gas nozzle component (122c), and each third reaction gas nozzle component (122c) may be disposed between the plurality of linear source gas nozzle components (121).

[0096] That is, among the plurality of linear source gas nozzle components (121) and the plurality of linear reaction gas nozzle components (122), the linear reaction gas nozzle components (122) may be respectively arranged at two outer sides of the linear deposition source (120) in the second axial direction. After the source gas is deposited, a reaction gas such as a gas containing oxygen (O) atoms or nitrogen (N) atoms must be injected to form a thin film made of oxide or nitride. Therefore, the reaction gas may be injected at the end of each scan to form an oxide or nitride. Here, the oxide or nitride may be stable, so that even if the substrate (10) completely passes through (or deviates from) the section corresponding to the linear deposition source (120) through a complete scan, there may be no influence (or change or deformation) (on the film (state)).

[0097] In addition, the deposition device (100) according to the present invention may further include a selection controller (153), which selects a reaction gas nozzle component (122a or 122b) to block the reaction gas from among the first and second reaction gas nozzle components (122a and 122b) according to the moving direction of the substrate supporter (110).

[0098] The selection controller (153) can select a reaction gas nozzle component (122a or 122b) to block the reaction gas from the first and second reaction gas nozzle components (122a and 122b) according to the moving direction of the substrate support (110), and at the beginning of each scan, the source gas can be first injected and deposited, and at the end of each scan, the reaction gas can be injected to form an oxide or a nitride, and then the reaction gas deviates from the section corresponding to the linear deposition source (120).

[0099] For example, when the substrate supporter (110) moves to one side in the second axial direction, the selection controller (153) may block the reaction gas of the second reaction gas nozzle part (122b), and when the substrate supporter (110) moves to the other side in the second axial direction, the reaction gas of the first reaction gas nozzle part (122a) may be blocked. That is, the selection controller (153) may block the reaction gas of the second reaction gas nozzle part (122b) on the other side of the linear deposition source (120) disposed in the second axial direction during the scanning of moving the substrate supporter (110) to one side in the second axial direction, so that the source gas may be first injected and deposited during the scanning of moving to one side. Here, the first reaction gas nozzle component (122a) can inject the reaction gas without blocking the reaction gas, so that the reaction gas is injected at the end of the scan moving to one side, thereby oxidizing or nitriding the source gas on the substrate (10), and the reaction gas can be injected from the third reaction gas nozzle component (122c) after the linear source gas nozzle component (121) to oxidize or nitridate the source gas on the substrate (10), so that the source gas is oxidized or nitrided on the substrate (10).

[0100] On the other hand, the selection controller (153) may block the reaction gas of the first reaction gas nozzle part (122a) disposed on one side of the linear deposition source (120) in the second axial direction during the scanning of moving the substrate supporter (110) to the other side of the second axial direction, so that the source gas may be first injected and deposited during the scanning of moving to the other side. Here, the second reaction gas nozzle part (122b) may inject the reaction gas without blocking the reaction gas, so that the reaction gas is injected last in the scanning of moving to the other side, thereby oxidizing or nitriding the source gas on the substrate (10), and the reaction gas may be injected from the third reaction gas nozzle part (122c) after the linear source gas nozzle part (121) in the scanning of moving to the other side to oxidize or nitridate the source gas on the substrate (10), so that the source gas is oxidized or nitrided on the substrate (10).

[0101] When the controller (153) selects the linear source gas nozzle component (121) that blocks the source gas, the reaction gas of the reaction gas nozzle component (122a, 122b or 122c) adjacent to the linear source gas nozzle component (121) that blocks the source gas can be blocked. For example, when the substrate supporter (110) moves to one side in the second axial direction, the reaction gas of the reaction gas nozzle component (122a or 122c) adjacent to the linear source gas nozzle component (121) that blocks the source gas can be blocked, and when the substrate supporter (110) moves to the other side in the second axial direction, the reaction gas of the reaction gas nozzle component (122b or 122c) adjacent to the other side in the second axial direction that blocks the source gas can be blocked.

[0102] Here, the selection controller (153) may include: a source gas selection controller (153a) that selects a linear source gas nozzle component (121) that blocks the source gas; and a reaction nozzle selection controller (153b) that selects a reaction gas nozzle component (122a, 122b, or 122c) that blocks the reaction gas. The source gas selection controller (153a) may select a linear source gas nozzle component (121) that blocks the source gas, and the reaction nozzle selection controller (153b) may select a reaction gas nozzle component (122a or 122b) that blocks the reaction gas according to the moving direction of the substrate supporter (110), and select a reaction gas nozzle component (122a, 122b, or 122c) that blocks the reaction gas according to the selection of the source gas selection controller (153a). In addition, the injection control component (151), the plasma control component (152), and the selection controller (153) may be integrated to form a controller (150).

[0103] The linear deposition source (120) may further include a plurality of purge nozzle parts (123) which are arranged in parallel to each other on both sides of each of the linear source gas nozzle part (121) and the linear reaction gas nozzle part (122) in the second axial direction to inject the purge gas. The purge nozzle part (123) may be arranged to extend in the first axial direction (11) and may be arranged in parallel to each other on both sides of each of the linear source gas nozzle part (121) and the linear reaction gas nozzle part (122) in the second axial direction, so that the linear source gas nozzle part (121) and the linear reaction gas nozzle part (122) may be arranged in parallel to each other in the first axial direction (11) between the linear source gas nozzle part (121) and the linear reaction gas nozzle part (122). Here, the purge nozzle part (123) can inject the purge gas supplied by the purge gas supply part (not shown), and can clean the residual gas and / or by-products not adsorbed on the substrate (10), and the source material (layer) and / or reaction material (layer) adsorbed on the substrate (10) in units of atomic layers by the purge gas. Here, the purge gas and the residual gas and / or by-products (or residual gas) can be discharged (or exhausted) to the outside (for example, outside the chamber) through the exhaust hole (125), and the exhaust hole (125) can be provided between the linear source gas nozzle part (121) and the purge nozzle part (123), between the linear reaction gas nozzle part (122) and the purge nozzle part (123), and / or between multiple purge nozzle parts (123). Here, the purge gas may include an inert gas, such as nitrogen (N2).

[0104] In addition, the purge nozzle component (123) can spatially separate the source gas and the reaction gas on the substrate (10), and through the purge nozzle component (123), the source gas and the reaction gas injected from the linear source gas nozzle component (121) and the linear reaction gas nozzle component (122) respectively can be spatially separated, so that the source material (layer) and the reaction material (layer) in units of atomic layers can be stacked in sequence, and the source material (layer) and the reaction material (layer) can react to form a thin film.

[0105] Here, the purge nozzle parts (123) may be respectively arranged on both sides of the linear source gas nozzle part (121) in the second axial direction and on both sides of the linear reaction gas nozzle part (122) in the second axial direction. In this case, the (two) purge nozzle parts (123) may be arranged in series (or continuously) between the linear source gas nozzle part (121) and the linear reaction gas nozzle part (122). In this case, when the (two) purge nozzle parts (123) are arranged continuously, the linear source gas nozzle part (121) and the linear reaction gas nozzle part (122) may be more effectively separated in space, and the source gas and the reaction gas may be separated in space on the substrate (10), so that the source material (layer) and the reaction material (layer) in units of atomic layers are well deposited (or stacked) in sequence. In addition, before the source material (layer) and the reaction material (layer) are deposited on the substrate (10), the contact between the source gas and the reaction gas in the air (i.e., between the substrate and the linear deposition source) can be fundamentally blocked to prevent the film from being deposited in agglomerates rather than atomic layers. Since the residual gas of the source gas and the residual gas of the reaction gas may not contact each other during the exhaust process, it is possible to prevent the residual gas of the source gas and the residual gas of the reaction gas from reacting with each other and depositing a film on the exhaust channel (inner wall).

[0106] Figure 3 is a flow chart of a deposition method according to another embodiment of the present invention.

[0107] Reference Figure 3 A deposition method according to another exemplary embodiment is described. In describing a deposition apparatus according to another exemplary embodiment, descriptions repeated with the aforementioned deposition apparatus will be omitted.

[0108] According to another embodiment of the present invention, a deposition method may include: a process (S100) of moving a substrate supporter supporting a substrate to pass through a section corresponding to a linear deposition source in a second axial direction intersecting the first axial direction, wherein a linear source gas nozzle component and a linear reaction gas nozzle component are arranged to be parallel to each other in the first axial direction; a process (S200) of detecting a position of the substrate supporter in the second axial direction; and a process (S300) of individually controlling gas injection of the linear source gas nozzle component and the linear reaction gas nozzle component according to the position of the substrate supporter in the second axial direction.

[0109] First, a substrate supporter supporting a substrate is movable in a second axial direction intersecting the first axial direction through a section corresponding to a linear deposition source, wherein a linear source gas nozzle component and a linear reaction gas nozzle component are arranged parallel to each other in the first axial direction (S100). A substrate supporter supporting a substrate is movable in a second axial direction intersecting the first axial direction through a section corresponding to a linear deposition source, wherein a linear source gas nozzle component and a linear reaction gas nozzle component are arranged parallel to each other in the first axial direction, and the substrate supporter is movable in the second axial direction by a driving component to deposit source gas and reaction gas in units of atomic layers on the entire area of ​​the substrate. Here, source materials (layers) and reaction materials (layers) in units of atomic layers may be alternately stacked, and the source materials and reaction materials may react to form a thin film.

[0110] Next, the position of the substrate supporter in the second axial direction is detected (S200). The position of the substrate supporter in the second axial direction may be detected (identified) by a position detection component, and the detected position of the substrate supporter in the second axial direction may be transmitted to an injection control component to individually control gas injection of the linear source gas nozzle component and the linear reaction gas nozzle component. Here, the position detection component may detect the position of the substrate supporter in the second axial direction by various methods such as a sensor.

[0111] In addition, the gas injection of the linear source gas nozzle part and the linear reaction gas nozzle part can be individually controlled according to the detected position of the substrate supporter in the second axial direction (S300). The gas injection of the linear source gas nozzle part and the linear reaction gas nozzle part can be individually controlled according to the position of the substrate supporter in the second axial direction detected (identified) by the injection control part. For example, the gas injection of the linear source gas nozzle part and the linear reaction gas nozzle part can be controlled by turning on / off the gas injection, and the start and end of the gas injection can be determined depending on the nozzle part of the linear source gas nozzle part and the linear reaction gas nozzle part through which the substrate supporter passes.

[0112] The individually controlling process (S300) may include: a process (S310) of controlling the gas injection of the linear source gas nozzle component to inject source gas when the substrate support passes through a section corresponding to the linear source gas nozzle component; and a process (S320) of controlling the gas injection of the linear reaction gas nozzle component to inject reaction gas when the substrate support passes through a section corresponding to the linear reaction gas nozzle component.

[0113] When the substrate support passes through the section corresponding to the linear source gas nozzle part, the gas injection of the linear source gas nozzle part may be controlled to inject the source gas (S310). The gas injection of the linear source gas nozzle part may be controlled by the injection control part according to the position of the substrate support in the second axial direction to inject the source gas when the substrate support and / or the substrate passes through the section corresponding to the linear source gas nozzle part. Therefore, the source gas may be injected (only) when the substrate and / or the substrate support is disposed opposite to the linear source gas nozzle part.

[0114] In addition, when the substrate passes through the section corresponding to the linear reaction gas nozzle part, the gas injection of the linear reaction gas nozzle part can be controlled to inject the reaction gas (S320). The gas injection of the linear reaction gas nozzle part can be controlled by the injection control part according to the position of the substrate supporter in the second axial direction to inject the reaction gas when the substrate supporter and / or the substrate passes through the section corresponding to the linear reaction gas nozzle part. Therefore, the reaction gas can be injected (only) when the substrate and / or the substrate supporter is arranged opposite to the linear reaction gas nozzle part.

[0115] In the individual control process (S300), the linear source gas nozzle component and the linear reaction gas nozzle component may be individually controlled according to the movement of the substrate support so that gas injection starts (or starts) in sequence. The linear source gas nozzle component and the linear reaction gas nozzle component may be individually controlled according to the movement of the substrate support, and the linear source gas nozzle component and the linear reaction gas nozzle component may be individually controlled by the injection control component according to the movement of the substrate support to start gas injection in sequence. Therefore, source gas may be injected when the substrate and / or the substrate support is arranged relative to (or corresponds to) the linear source gas nozzle component, and reaction gas may be injected when the substrate and / or the substrate support is arranged relative to the linear reaction gas nozzle component. Therefore, the source gas and / or reaction gas may not be injected into parts other than the substrate and / or the substrate support (for example, the chamber and the driving component, etc.), but may be injected (only) at relevant positions (i.e., the substrate and / or the substrate support) to reduce unnecessary gas consumption (or the amount of gas that is not injected into the substrate and not deposited on the substrate).

[0116] In addition, the source gas and / or the reaction gas can be injected only onto the substrate and / or the substrate support to suppress or prevent the source gas and / or the reaction gas from being deposited on portions other than the substrate and / or the substrate support. Therefore, the contamination of portions other than the substrate and / or the substrate support due to the deposition of the source gas and / or the reaction gas can be minimized, and the generation of particles (during the process) caused by the peeling of contaminants deposited on portions other than the substrate and / or the substrate support can be prevented or suppressed. At the same time, in the individual control process (S300), the linear source gas nozzle component and the linear reaction gas nozzle component can be individually controlled according to the movement of the substrate support so that the gas injection is terminated (or closed) in sequence.

[0117] Therefore, in the present invention, the gas injection of the linear source gas nozzle component and the linear reaction gas nozzle component can be individually controlled according to the position of the substrate support detected by the position detection component in the second axial direction, so when the substrate and / or the substrate support arrives (or reaches) the position corresponding to (or relative to) the linear source gas nozzle component and the linear reaction gas nozzle component, the gas injection can be started in sequence. Therefore, it is possible to reduce unnecessary gas consumption that is not injected into the substrate and does not participate in deposition, and suppress or prevent the source gas and / or reaction gas from being deposited on the parts other than the substrate and / or the substrate support, thereby minimizing the contamination of the parts other than the substrate and / or the substrate support caused by the deposition of the source gas and / or reaction gas. Therefore, the generation of particles caused by the peeling of contaminants deposited on the parts other than the substrate and / or the substrate support can be prevented or suppressed, and the performance degradation of the deposited film caused by the particles can be prevented or suppressed. In addition, it is not necessary to clean the deposition equipment such as the chamber, or the cleaning cycle for preventing the generation of particles can be increased to reduce the cleaning cost.

[0118] The substrate supporter may include an edge portion disposed on each of both sides in the second axial direction, the edge portion being longer than the substrate in the second axial direction. The edge portion may be disposed on both sides of the substrate supporter in the second axial direction and be longer than the substrate in the second axial direction, and one of the two sides in the second axial direction may enter the section corresponding to the linear deposition source earlier than the substrate, while the other side (or the opposite side) may be separated (or deviated) from the section corresponding to the linear deposition source later than the substrate.

[0119] Here, the process (S310) of controlling the gas injection of the linear source gas nozzle component may include: when the edge portion on both sides in the second axial direction located on the same side as the moving direction of the substrate support enters the section corresponding to the linear source gas nozzle component, starting the process of injecting source gas (S311); and when the edge portion on the opposite side to the moving direction of the substrate support enters the section corresponding to the linear source gas nozzle component, terminating the process of injecting source gas (S312).

[0120] When the edge portion located on the same side as the moving direction of the substrate supporter among the two sides in the second axial direction enters the section corresponding to the linear source gas nozzle part, the source gas injection may be started (S311). When the substrate enters the section corresponding to the linear source gas nozzle part, the source gas may be injected so that no part of the substrate passes through the section corresponding to the linear source gas nozzle part without the source gas injection. When the edge portion located on the same side as the moving direction of the substrate supporter enters the section corresponding to the linear source gas nozzle part, the source gas injection may be started (turned on).

[0121] Then, when the edge portion located on the side opposite to the moving direction of the substrate supporter enters the section corresponding to the linear source gas nozzle part, the injection of the source gas may be terminated (S312). When the edge portion located on the side opposite to the moving direction of the substrate supporter enters the section corresponding to the linear source gas nozzle part, the substrate may not have completely deviated from the section corresponding to the linear source gas nozzle part, and the injection of the source gas may be terminated (or closed) before the substrate completely deviates from the section corresponding to the linear source gas nozzle part, thereby preventing the gas injection (i.e., the injection of the source gas) from deviating from the section corresponding to the linear source gas nozzle part until the substrate supporter before being blocked, and preventing the source gas from being deposited on the substrate and / or a portion other than the substrate support.

[0122] In addition, the process (S320) of controlling the gas injection of the linear reaction gas nozzle component may include: when the edge portion on both sides in the second axial direction located on the same side as the moving direction of the substrate support enters the section corresponding to the linear reaction gas nozzle component, starting the process of injecting the reaction gas (S321); and when the edge portion on the opposite side to the moving direction of the substrate support enters the section corresponding to the linear reaction gas nozzle component, terminating the process of injecting the reaction gas (S322).

[0123] When the edge portion located on the same side as the moving direction of the substrate supporter among the two sides in the second axial direction enters the section corresponding to the linear reaction gas nozzle part, the reaction gas injection may be started (S321). When the substrate enters the section corresponding to the linear reaction gas nozzle part, the reaction gas may be injected so that no part of the substrate passes through the section corresponding to the linear reaction gas nozzle part without the reaction gas injection. When the edge portion located on the same side as the moving direction of the substrate supporter enters the section corresponding to the linear reaction gas nozzle part, the reaction gas injection may be started.

[0124] Then, when the edge portion located on the side opposite to the moving direction of the substrate supporter enters the section corresponding to the linear reaction gas nozzle part, the injection of the reaction gas may be terminated (S322). In addition, when the edge portion located on the side opposite to the moving direction of the substrate supporter enters the section corresponding to the linear reaction gas nozzle part, the substrate may not be completely separated from the section corresponding to the linear reaction gas nozzle part, and the injection of the reaction gas may be terminated before the substrate is completely separated from the section corresponding to the linear reaction gas nozzle part, thereby preventing the substrate supporter from being separated from the section corresponding to the linear reaction gas nozzle part, and preventing the reaction gas from being deposited on the substrate and / or a portion other than the substrate supporter before the gas injection (i.e., the injection of the reaction gas) is blocked.

[0125] The process of detecting the position ( S200 ) may include a process of outputting position and speed information of the substrate supporter using an encoder ( S210 ).

[0126] The position and speed information of the substrate support can be outputted using an encoder (S210). The encoder can output the position and speed information of the substrate support, and can output the position and speed information of the substrate support as an electrical signal. For example, the encoder can be mainly attached to the motor to read the position of the motor, and can detect the rotation speed, rotation amount and rotation direction of the motor. The encoder can be provided as a linear encoder and attached to the substrate support or the moving part, and used like a ruler with a precise grid scale, so that the sensor reads the pulse when passing the scale, and converts the pulse into a straight line movement distance.

[0127] In addition, in the individually controlling process (S300), the source gas valve of the linear source gas nozzle part and the reaction gas valve of the linear reaction gas nozzle part may be switched according to the position and speed information of the substrate support outputted. The source gas valve of the linear source gas nozzle part and the reaction gas valve of the linear reaction gas nozzle part may be switched according to the position and speed information of the substrate support outputted by the injection control part. In the case where the injection control part switches the source gas valve and the reaction gas valve according to the output position and speed information of the substrate support, the source gas valve and the reaction gas valve may be switched using a delay time according to the switching of the source gas valve and the reaction gas valve and the (moving) speed of the substrate support to allow the source gas and the reaction gas to be deposited from the front end (or rear end) of the substrate to the entire (surface) of the substrate until the end (or rear end) of the substrate.

[0128] The deposition method according to the present invention may further include a process of generating plasma in the linear reaction gas nozzle part when the substrate supporter moves ( S150 ).

[0129] When the substrate supporter moves, plasma may be generated in the linear reaction gas nozzle part (S150). Plasma may be provided to the linear reaction gas nozzle part by the plasma generating part, and the reaction gas may be excited to form a free radical state. Therefore, the reaction gas in the free radical state may be injected from the linear reaction gas nozzle part. The plasma control part may control the generation of plasma according to whether the substrate supporter moves, may turn on / off the plasma, and may generate plasma when the deposition process is performed by moving the substrate supporter (or when the substrate supporter moves). Here, the on / off timing of the plasma may be different from the on / off timing of the reaction gas (reaction gas valve), and the on / off of the plasma may not be performed simultaneously with the on / off of the reaction gas.

[0130] For example, when the substrate support moves to perform a deposition process, the plasma may be continuously turned on (or generated) regardless of whether the substrate support and / or the substrate faces the linear reaction gas nozzle component, and the reaction gas may be turned on (or injected) only when the substrate support and / or the substrate faces the linear reaction gas nozzle component according to the position of the substrate support in the second axial direction.

[0131] In addition, the process (S320) of controlling the gas injection of the linear reaction gas nozzle component can be performed according to the position of the substrate support in the second axial direction while forming plasma. When the substrate support starts to move to perform the deposition process, the plasma can be turned on, and when the substrate support stops moving to end the deposition process, the plasma can be turned off. Here, in order to prevent unnecessary deposition of the reaction gas and gas consumption, the gas injection of the linear reaction gas nozzle component can be controlled according to the position of the substrate support in the second axial direction, and when the edge portion located on the same side as the moving direction of the substrate support on both sides in the second axial direction enters the section corresponding to the linear reaction gas nozzle component, the injection of the reaction gas can be started, and when the edge portion located on the opposite side to the moving direction of the substrate support enters the section corresponding to the linear reaction gas nozzle component, the injection of the reaction gas can be eliminated, so that the reaction gas can be injected only when the substrate support and / or the substrate faces the linear reaction gas nozzle component.

[0132] Therefore, when the plasma control component starts to move the substrate support to perform a deposition process, plasma can be generated (or turned on) to generate stable plasma when the substrate enters the section corresponding to the linear reaction gas nozzle component, and in the state of generating stable plasma, the gas injection of the linear reaction gas nozzle component can be controlled according to the position of the substrate support in the second axial direction, so that the reaction gas in a free radical state is stably injected from the linear reaction gas nozzle component toward the substrate.

[0133] The linear source gas nozzle part may be provided in plurality and may respectively supply a plurality of source gases containing different metals. Here, the linear source gas nozzle part and the linear reaction gas nozzle part may be alternately provided in the second axial direction.

[0134] For example, different source gases may be supplied and injected into a plurality of linear source gas nozzle parts, respectively, so that a multi-component (e.g., In / Ga / Zn) atomic layer may be deposited, and a composite metal oxide or nitride such as IGZO (In / Ga / Zn oxide) may be deposited. Here, source gases containing different metals may be supplied to the linear source gas nozzle parts, respectively.

[0135] In addition, the process of moving in the second axial direction ( S100 ) may include a process of allowing the substrate supporter to reciprocate ( S110 ) so that the entire area of ​​the substrate passes through a section corresponding to the linear deposition source.

[0136] The substrate supporter may reciprocate so that the entire area of ​​the substrate passes through the section corresponding to the linear deposition source (S110). The substrate supporter may reciprocate by a driving component so that the entire area of ​​the substrate passes through the section corresponding to the linear deposition source, and the entire area of ​​the substrate may pass through the section corresponding to the linear deposition source by the driving component, and a thin film (or a source material (layer) and a reaction material (layer)) may be deposited on the entire area of ​​the substrate, and by allowing the entire area of ​​the substrate to deviate (or pass) from (or pass through) the section corresponding to the linear deposition source, a thin film may be uniformly deposited on the entire area of ​​the substrate. In addition, the driving component may allow the substrate supporter to reciprocate, and the material layers (or source material (layer) and reaction material (layer)) may be stacked multiple times on the entire area of ​​the substrate to form (or deposit) a thin film having a desired thickness on the substrate.

[0137] Here, the deposition method according to the present invention may further include a process (S160) of selecting a linear source gas nozzle component, wherein a linear source gas nozzle component to block the source gas is selected from a plurality of linear source gas nozzle components by each scanning of a segment corresponding to a linear deposition source for the entire area of ​​the substrate.

[0138] For each scan of the entire area of ​​the substrate through the section corresponding to the linear deposition source, a linear source gas nozzle part to block the source gas may be selected from a plurality of linear source gas nozzle parts (S160). The selection controller may select a linear source gas nozzle part to block the source gas from a plurality of linear source gas nozzle parts in each scan of the entire area of ​​the substrate through the section corresponding to the linear deposition source. Here, a plurality of source gases may be selectively deposited on the substrate, and the composition (i.e., the ratio of the composite metal) in the composite metal oxide and the composite metal nitride may be controlled (or adjusted).

[0139] For example, after all the plurality of source gases are deposited in the first scan, so that the source gases are sequentially deposited one by one in the second scan, the source gas deposited last in the first scan may be blocked, and only the remaining source gas may be deposited, and in the third scan, the source gas deposited last in the second scan may be blocked, and only the remaining source gas may be deposited. In the nth scan, the source gas deposited last in the (n-1)th scan may be blocked, and only the remaining source gas may be deposited, and in this way, a thin film (or source material (layer)) may be deposited up to the nth scan.

[0140] Here, the selection controller may select a linear source gas nozzle component that injected the most recently deposited source gas in a previous scan (or the (n-1)th scan) to block the source gas in this scan (or the nth scan), and may select the linear source gas nozzle component that injected the most recently deposited source gas in a previous scan in each scan in which the entire area of ​​the substrate passes through a segment corresponding to the linear deposition source.

[0141] The linear reaction gas nozzle part may include first and second reaction gas nozzle parts, which are respectively disposed on one side and the other side of the linear deposition source in the second axial direction, so that the linear source gas nozzle part is disposed between the first and second reaction gas nozzle parts. The first reaction gas nozzle part may be disposed on one side of the linear deposition source in the second axial direction, and when the substrate supporter moves to one side of the second axial direction to perform scanning, the reaction gas may be injected (or deposited) last, and when the substrate supporter moves to the other side of the second axial direction to perform scanning, the reaction gas may be injected first.

[0142] The second reaction gas nozzle component can be arranged on the other side of the linear deposition source in the second axial direction, and when the substrate supporter moves to the other side of the second axial direction to perform scanning, the reaction gas can be injected last, and when the substrate supporter moves to one side of the second axial direction to perform scanning, the reaction gas can be injected first.

[0143] Here, the linear source gas nozzle part may be disposed between the first reaction gas nozzle part and the second reaction gas nozzle part, and when the linear source gas nozzle part is provided in plurality, all the plurality of linear source gas nozzle parts may be disposed between the first reaction gas nozzle part and the second reaction gas nozzle part. Here, the linear reaction gas nozzle part may further include a third reaction gas nozzle part disposed between the plurality of linear source gas nozzle parts, there may be at least one third reaction gas nozzle part, and each third reaction gas nozzle part may be disposed between the plurality of linear source gas nozzle parts.

[0144] In addition, the deposition method according to the present invention may further include a process of selecting a reaction gas nozzle part (S170), in which a reaction gas nozzle part to block the reaction gas is selected from the first and second reaction gas nozzle parts according to the moving direction of the substrate support.

[0145] A reaction gas nozzle part to block the reaction gas may be selected from the first and second reaction gas nozzle parts according to the moving direction of the substrate supporter (S170). The selection controller may select the reaction gas nozzle part to block the reaction gas from the first and second reaction gas nozzle parts according to the moving direction of the substrate supporter, and at the beginning of each scan, the source gas may be first injected and deposited, and at the end of each scan, the reaction gas may be injected to form an oxide or a nitride, and then the reaction gas deviates from the section corresponding to the linear deposition source.

[0146] The process of selecting a reaction gas nozzle component (S170) may include: when the substrate supporter moves to one side in the second axial direction, the process of selecting a second reaction gas nozzle component (S171); and when the substrate supporter moves to the other side in the second axial direction, the process of selecting a first reaction gas nozzle component (S172).

[0147] When the substrate supporter moves to one side in the second axial direction, the second reaction gas nozzle part may be selected (S171). That is, the selection controller may block the reaction gas of the second reaction gas nozzle part on the other side of the linear deposition source disposed in the second axial direction during the scanning of the substrate supporter moving to one side in the second axial direction, so that the source gas may be first injected and deposited during the scanning of the movement to one side. Here, the first reaction gas nozzle part may inject the reaction gas without blocking the reaction gas, so that the reaction gas is injected last in the scanning of the movement to one side, thereby oxidizing or nitriding the source gas on the substrate, and the reaction gas may be injected from the third reaction gas nozzle part after the linear source gas nozzle part to oxidize or nitridate the source gas on the substrate, so that the source gas is oxidized or nitrided on the substrate.

[0148] In addition, when the substrate supporter moves to the other side of the second axial direction, the first reaction gas nozzle part may be selected (S172). The selection controller may block the reaction gas of the first reaction gas nozzle part on one side of the linear deposition source disposed in the second axial direction during the scanning of the substrate supporter moving to the other side of the second axial direction, so that the source gas may be first injected and deposited during the scanning of the movement to the other side. Here, the second reaction gas nozzle part may inject the reaction gas without blocking the reaction gas, so that the reaction gas is injected last in the scanning of the movement to the other side, thereby oxidizing or nitriding the source gas on the substrate, and the reaction gas may be injected from the third reaction gas nozzle part after the linear source gas nozzle part to oxidize or nitridate the source gas on the substrate in the scanning of the movement to the other side, so that the source gas is oxidized or nitrided on the substrate.

[0149] As described above, the deposition apparatus according to the embodiment of the present invention can individually control the linear source gas nozzle part and the linear reaction gas nozzle part according to the position of the substrate supporter detected by the position detection part in the second axial direction, so as to start gas injection in sequence when the substrate reaches the position corresponding to the linear source gas nozzle part and the linear reaction gas nozzle part, thereby reducing unnecessary gas consumption that is not injected into the substrate and does not participate in deposition. In addition, the source gas and / or the reaction gas can be suppressed or prevented from being deposited on the part other than the substrate to minimize the contamination of the part other than the substrate, thereby preventing or suppressing the generation of particles during the process due to contamination. Therefore, the performance degradation of the deposited film due to particles can be prevented or suppressed, and the cleaning of the deposition apparatus can be terminated, or the cleaning cycle for preventing particle generation can be increased to reduce the cleaning cost. Here, the edge portion can be longer than the substrate on the substrate supporter in the second axial direction to control the gas injection of the linear source gas nozzle part and the linear reaction gas nozzle part according to the position of the edge portion, thereby ensuring the delay time generated by the switching of the source gas valve and the reaction gas valve, and preventing the substrate from passing through the section corresponding to the linear source gas nozzle part and / or the linear reaction gas nozzle part due to the delay time before the gas injection starts. Furthermore, even when the gas injection is terminated, the gas may be injected into the edge portion of the substrate supporter within a delay time to prevent the remaining gas from diffusing to other places and induce the remaining gas to flow toward the extraction hole, thereby exhausting the remaining gas to the extraction hole.

[0150] The term "on..." used in the above description includes direct contact and indirect contact at a position relative to the upper and lower parts. Not only the entire upper surface or the entire lower surface can be located, but also a part of the upper surface or the lower surface can be located, and it is used to express the meaning of being relative to or in direct contact with the upper surface or the lower surface in position.

[0151] Although the preferred embodiments of the present invention have been described with reference to a number of illustrative embodiments, the embodiments of the present invention are not limited to the above embodiments, and therefore, it should be understood that those skilled in the art can derive numerous other modifications and embodiments within the spirit and scope of the principles of the present invention. Therefore, the true protection scope of the present invention should be determined by the technical scope of the appended claims.

Claims

1. A deposition device, comprising: A substrate supporter, on which a substrate is supported; a linear deposition source including a linear source gas nozzle part and a linear reaction gas nozzle part, the linear source gas nozzle part and the linear reaction gas nozzle part being arranged parallel to each other in a first axial direction intersecting the substrate and configured to inject a source gas and a reaction gas, respectively; a drive member configured to move the substrate support in a second axial direction intersecting the first axial direction; a position detection component configured to detect a position of the substrate supporter in the second axial direction; as well as The injection control part is configured to individually control the gas injection of the linear source gas nozzle part and the linear reaction gas nozzle part according to the detected position of the substrate supporter in the second axial direction.

2. The deposition apparatus according to claim 1, wherein the injection control component is configured to: controlling the gas injection of the linear source gas nozzle part so that the source gas is injected when the substrate supporter passes through a section corresponding to the linear source gas nozzle part; and controlling the gas injection of the linear reaction gas nozzle member so that the reaction gas is injected when the substrate support passes through a section corresponding to the linear reaction gas nozzle member, The linear source gas nozzle assembly and the linear reaction gas nozzle assembly are individually controlled according to the movement of the substrate supporter so that the gas injection is started sequentially.

3. The deposition apparatus according to claim 2, wherein the substrate supporter comprises edge portions provided at both sides in the second axial direction, the edge portions being longer than the substrate in the second axial direction, The linear source gas nozzle member is configured to start the injection of the source gas when the edge portion located on the same side as the moving direction of the substrate supporter among the two sides in the second axial direction enters a section corresponding to the linear source gas nozzle member, and is configured to terminate the injection of the source gas when the edge portion located on the side opposite to the moving direction of the substrate supporter enters the section corresponding to the linear source gas nozzle member, and The linear reaction gas nozzle component is configured to start the injection of the reaction gas when the edge portion located on the same side as the moving direction of the substrate supporter on both sides in the second axial direction enters the section corresponding to the linear reaction gas nozzle component, and is configured to terminate the injection of the reaction gas when the edge portion located on the opposite side to the moving direction of the substrate supporter enters the section corresponding to the linear source gas nozzle component.

4. The deposition apparatus according to claim 3, further comprising: a source gas valve disposed in the linear source gas nozzle assembly; as well as A reaction gas valve disposed in the linear reaction gas nozzle assembly, wherein the position detection component comprises an encoder configured to output position and speed information of the substrate supporter, and The injection control part is configured to switch the source gas valve and the reaction gas valve according to the output position and speed information of the substrate support.

5. The deposition apparatus according to claim 2, further comprising: a plasma generating component configured to provide plasma to the linear reaction gas nozzle component; as well as The plasma control component is configured to control the generation of the plasma according to whether the substrate supporter moves.

6. The deposition apparatus according to claim 5, wherein the plasma control component is configured to generate the plasma when the substrate supporter moves, and The injection control part is configured to control the gas injection of the linear reaction gas nozzle part according to the position of the substrate supporter in the second axial direction in the state where the plasma is generated.

7. The deposition apparatus according to claim 1, wherein the driving part is configured to allow the substrate supporter to reciprocate so that the entire area of ​​the substrate passes through a section corresponding to the linear deposition source, The linear source gas nozzle member is provided in plural so that a plurality of source gases containing different metals are supplied respectively, and The deposition apparatus further includes a selection controller configured to select the linear source gas nozzle component to block the source gas from among the plurality of linear source gas nozzle components at each scan of the entire area of ​​the substrate through the segment corresponding to the linear deposition source.

8. The deposition apparatus according to claim 1, wherein the linear reaction gas nozzle member comprises first and second reaction gas nozzle members, the first reaction gas nozzle member and the second reaction gas nozzle member being respectively disposed on one side and the other side of the linear deposition source in the second axial direction, such that the linear source gas nozzle member is disposed between the first reaction gas nozzle member and the second reaction gas nozzle member, and The deposition apparatus further includes a selection controller configured to select a reaction gas nozzle part to block the reaction gas among the first and second reaction gas nozzle parts according to a moving direction of the substrate support.

9. The deposition apparatus according to claim 8, wherein the selection controller is configured to: When the substrate supporter moves to one side of the second axial direction, blocking the reaction gas of the second reaction gas nozzle part; and When the substrate supporter moves to the other side of the second axial direction, the reaction gas of the first reaction gas nozzle part is blocked. 10 . The deposition apparatus according to claim 1 , wherein the linear deposition source further comprises a purge nozzle part disposed parallel to both sides of each of the linear source gas nozzle part and the linear reaction gas nozzle part in the second axial direction to inject a purge gas.

11. A deposition method comprising: moving a substrate supporter supporting the substrate to pass through a section corresponding to a linear deposition source in a second axial direction intersecting the first axial direction, wherein the linear source gas nozzle part and the linear reaction gas nozzle part are arranged parallel to each other in the first axial direction; detecting a position of the substrate supporter in the second axial direction; and Gas injection of the linear source gas nozzle part and the linear reaction gas nozzle part are individually controlled according to the detected position of the substrate supporter in the second axial direction.

12. The deposition method of claim 11, wherein the individually controlling the gas injection comprises: controlling the gas injection of the linear source gas nozzle member so that source gas is injected when the substrate supporter passes through a section corresponding to the linear source gas nozzle member; as well as controlling the gas injection of the linear reaction gas nozzle member so that a reaction gas is injected when the substrate supporter passes through a section corresponding to the linear reaction gas nozzle member, Wherein, in the individually controlling the gas injection, the linear source gas nozzle part and the linear reaction gas nozzle part are individually controlled according to the movement of the substrate supporter so that the gas injection starts sequentially.

13. The deposition method according to claim 12, wherein the substrate supporter comprises edge portions provided at both sides in the second axial direction, the edge portions being longer than the substrate in the second axial direction, Wherein said controlling said gas injection of said linear source gas comprises: When the edge portion located on the same side as the moving direction of the substrate supporter among the two sides in the second axial direction enters a section corresponding to the linear source gas nozzle part, the injection of the source gas is started; as well as when the edge portion located on the side opposite to the moving direction of the substrate supporter enters the section corresponding to the linear source gas nozzle part, terminating the injection of the source gas, Wherein controlling the gas injection of the linear reaction gas comprises: When the edge portion located on the same side as the moving direction of the substrate supporter among both sides in the second axial direction enters a section corresponding to the linear reaction gas nozzle part, the injection of the reaction gas is started; and When the edge portion located at a side opposite to the moving direction of the substrate supporter enters the section corresponding to the linear reaction gas nozzle part, the injection of the reaction gas is terminated.

14. The deposition method according to claim 13, wherein the detecting the position comprises outputting position and speed information of the substrate supporter by using an encoder, and In the individually controlling the gas injection, a source gas valve of the linear source gas nozzle part and a reaction gas valve of the linear reaction gas nozzle part are switched according to the output position and speed information of the substrate support.

15. The deposition method according to claim 12, further comprising generating plasma in the linear reaction gas nozzle part when the substrate supporter moves, wherein the controlling the gas injection of the linear reaction gas nozzle member is performed according to the position of the substrate supporter in the second axial direction in a state where the plasma is generated.

16. The deposition method according to claim 11, wherein the linear source gas nozzle member is provided in plurality to respectively supply a plurality of source gases containing different metals, The moving the substrate supporter in the second axial direction includes allowing the substrate supporter to reciprocate so that the entire area of ​​the substrate passes through a section corresponding to the linear deposition source, and The deposition method further includes selecting the linear source gas nozzle part to block source gas from among the plurality of linear source gas nozzle parts at each scan of the entire area of ​​the substrate through the section corresponding to the linear deposition source.

17. The deposition method according to claim 11, wherein the linear reaction gas nozzle part comprises first and second reaction gas nozzle parts, the first reaction gas nozzle part and the second reaction gas nozzle part are respectively arranged on one side and the other side of the linear deposition source in the second axial direction, so that the linear source gas nozzle part is arranged between the first reaction gas nozzle part and the second reaction gas nozzle part, and The deposition method further includes selecting a reaction gas nozzle part to block a reaction gas from among the first and second reaction gas nozzle parts according to a moving direction of the substrate support.

18. The deposition method according to claim 17, wherein the selecting the reaction gas nozzle component comprises: When the substrate support moves to one side in the second axial direction, selecting the second reaction gas nozzle component; as well as When the substrate supporter moves to the other side in the second axial direction, the first reaction gas nozzle part is selected.

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