Surface crystal automatic loading clamp and automatic loading method

Abstract

The invention discloses a surface crystal automatic loading clamp, which can realize automatic loading of tuning fork type surface crystals by redesigning a magnetic wafer clamp with a middle layer with direction selection and cooperatively using a wafer shaking device, adopts magnetic fixation, avoids the condition that the wafers enter between the middle layer and an electrode layer under the condition that screws are not firmly fixed, and improves the working efficiency. And redundant wafers can be cleaned conveniently after automatic wafer loading. The invention also discloses an automatic loading method of the tuning fork type crystal.

Description

Technical Field

[0001] The present invention relates to the field of production and processing of electronic components, and in particular to an automatic wafer loading fixture. Background Art

[0002] A quartz crystal oscillator is a resonant device made using the piezoelectric effect of a quartz crystal. It is an electronic device that provides clock frequency for modern electronic products. In order to utilize the piezoelectric effect of a quartz crystal, it is necessary to apply voltage to the quartz crystal. In order to be able to apply voltage to the quartz crystal conveniently, it is necessary to plate metal electrodes on the chip to achieve electrical connection with the external circuit.

[0003] With current production technology, the length and width of the quartz crystal wafer used for crystal oscillator are generally about 1-2mm, and the thickness is only about 0.05mm. Therefore, plating electrodes on such a small wafer is a job that requires very high precision. When plating electrodes, the wafers need to be placed one by one in the fixture. The current method of placing wafers is either to use a robot to place them one by one, which has very high requirements for equipment and the purchase cost of the equipment is very high, or to use manual shaking to achieve code chips, that is, to dump the wafers exceeding the required number on the surface of the tooling, which is provided with a wafer hole, and through mechanical shaking, the wafers are placed one by one. The chip will be displaced. After shaking for a long enough time, there will always be a chip that just falls into the chip hole on the tooling, realizing automatic coding. However, this method of manual shaking of chips is labor-intensive and is not currently suitable for the automatic placement of tuning fork-type watch crystals. This is because the chip used in watches is tuning fork-type, which is different from the rectangular crystals commonly used in surface-mount crystal oscillators. The rectangular crystals do not need to consider the direction when coding, while the tuning fork-type watch crystals have directional requirements when coding and must be stacked in the required direction. Therefore, the current chip shaking tooling cannot achieve the requirements of tuning fork-type watch crystal coding.

[0004] Therefore, there is a need in the art for a fixture that can stack surface crystals with directional requirements. Summary of the invention

[0005] The technical problem to be solved by the present invention is to provide a fixture capable of stacking surface crystals with directional requirements.

[0006] The specific technical solution of the present invention to solve the above technical problems is:

[0007] An automatic wafer loading fixture for a surface crystal comprises a magnetic base frame, a lower electrode plate, and an intermediate layer plate which are arranged in sequence from bottom to top;

[0008] The magnetic base frame is magnetic and is provided with a hollow area, and the hollow area corresponds to the position of the tuning fork-type watch crystal to be processed;

[0009] The lower electrode plate is made of non-magnetic material and is provided with a hollow electrode area, so as to expose only the portion of the tuning fork crystal that needs to be plated with electrodes;

[0010] The intermediate plate has magnetic attraction, and is provided with a wafer hole frame, which is hollowed out and used to frame the tuning fork-type crystal to be processed to prevent the tuning fork-type crystal from moving in the horizontal direction; an end of the wafer hole frame on the intermediate plate is provided with an end identification sheet, and the end identification sheet is used to allow only the tuning fork-type crystal that meets the direction requirements to fall into the wafer hole frame;

[0011] The corresponding positions of the magnetic base frame, the lower electrode plate and the middle layer plate are provided with a plate body positioning mechanism for use in conjunction with each other, so as to make the positions of the magnetic base frame, the lower electrode plate and the middle layer plate correspond to each other.

[0012] Furthermore, the plate positioning mechanism includes circular positioning holes and elliptical positioning holes arranged on the lower electrode plate and the middle layer plate, and the circular positioning holes and the elliptical positioning holes are respectively located on the opposite sides of each plate body; the magnetic base frame is provided with a perfect circle positioning hole pin and an elliptical positioning hole pin at the fitting positions of the circular positioning holes and the elliptical positioning holes, and the sizes of the circular positioning holes and the elliptical positioning holes arranged on the lower electrode plate and the middle layer plate become smaller successively.

[0013] Furthermore, it also includes a guide plate, which is made of non-magnetic material, with a clamping area on its edge and a wafer guide hollow area on its surface. The direction of the wafer guide hollow area matches the direction of the wafer hole frame, so that the tuning fork-type crystal can be adjusted from all directions to only two directions. The wafer entering the guide hollow area of ​​the guide plate has only two possible directions relative to the wafer hole frame: forward or reverse, so the probability of a single wafer entering the slot is increased to 50%. The thickness of the guide plate is at least greater than the thickness of two tuning fork-type crystals to accommodate enough tuning fork-type crystals, and at the same time has sufficient rigidity to ensure that there will be no deformation that affects the shaking piece when it is clamped.

[0014] Furthermore, it also includes a lower guard plate, which has magnetic attraction and is provided with a hollow area identical to the magnetic base frame. The lower guard plate is used to shield the magnetic base frame body to prevent the target material from sputtering onto the surface of the magnetic base frame body.

[0015] Furthermore, the four sides of the chip hole frame respectively include limiting edges and avoiding edges. The limiting edges are used to limit the horizontal displacement of the tuning fork type crystal, and the avoiding edges are used to reduce possible interference between the tuning fork type crystal and the chip hole frame when operating the tuning fork type crystal.

[0016] Furthermore, it also includes an upper electrode plate and an upper guard plate, wherein the upper electrode plate is made of a non-magnetic material and the upper guard plate is made of a magnetic material;

[0017] The upper electrode plate is provided with a hollow electrode area for exposing only the portion of the tuning fork crystal that needs to be plated with electrodes;

[0018] A hollow avoidance area is provided on the upper guard plate at a position corresponding to the tuning fork-type crystal to be processed, and the upper guard plate is used to clamp and fix the upper electrode plate by utilizing the magnetic attraction between the upper guard plate and the middle layer.

[0019] Furthermore, two opposite sides of the lower guard plate and the magnetic base frame are provided with clamping areas for being clamped, and positions of the lower electrode plate and the middle layer plate corresponding to the clamping areas are provided with pinch avoidance areas, and the size of the pinch avoidance areas is larger than the clamping areas, so as to ensure that when external equipment clamps the clamping areas of the lower guard plate and the magnetic base frame, it cannot touch the lower electrode plate and the middle layer plate, thereby ensuring that the relative position of the lower electrode plate and the middle layer plate is not affected by the clamping equipment.

[0020] A method for automatically loading a watch crystal includes a shaking device, which is implemented in conjunction with the automatic watch crystal loading fixture described above, wherein the shaking device is provided with a fixture carrier, and the fixture carrier is provided with positioning pins corresponding to the perfect circle positioning hole pins and the elliptical positioning hole pins, and is also provided with a first clamping component corresponding to the clamping area of ​​the magnetic substrate, the first clamping component is used to fix the automatic watch crystal loading fixture placed on the fixture carrier, and also includes a driving mechanism, the driving mechanism is used to drive the fixture carrier to perform a swinging motion in the horizontal direction, the swinging motion causes a relative displacement in the horizontal direction between the tuning fork watch crystal placed on the automatic watch crystal loading fixture and not falling into the chip hole frame and the automatic watch crystal loading fixture.

[0021] An automatic wafer loading method for a watch crystal, based on the automatic wafer loading fixture and the automatic wafer loading and shaking device described above, specifically comprises the following steps:

[0022] S1, assemble the lower guard plate, magnetic base frame, lower electrode plate, and middle layer plate to obtain a film loading fixture, and fix the pre-assembled film loading fixture on the fixture carrier based on the positioning pins and the first clamping component on the shaking device;

[0023] S2, pouring the tuning fork crystal to be processed on the wafer fixture;

[0024] S3, start the shaking device to make the wafer clamp and the tuning fork-type crystal that has not fallen into the wafer hole frame move relative to each other, and the tuning fork-type crystal that meets the requirements falls into the wafer hole frame with a suitable position;

[0025] S4, clean up the extra tuning fork crystals, check and fill the hole frames where the wafers are not stacked, and remove the guide plates;

[0026] S5, transferring the wafer fixture with all wafer hole frames stacked with tuning fork-type crystals to a suction box that can generate negative pressure, so that the tuning fork-type crystals in the wafer hole frames are firmly adsorbed in the wafer hole frames based on the negative pressure generated by the suction box, and covering the upper electrode plate and the upper guard plate with the elliptical positioning hole pins and the circular positioning hole pins to obtain a wafer fixture carrying the tuning fork-type crystal to be processed;

[0027] S6, enter the next processing step.

[0028] Furthermore, the swinging device is also provided with a second clamping component for clamping the guide plate, the second clamping component is in transmission connection with the driving mechanism, and when the driving mechanism is started, the second clamping component carries the clamped guide plate and swings in the horizontal direction;

[0029] The step S1 also includes covering the guide plate on the middle plate, and the step S4 also includes removing the guide plate. During the shaking process, the middle plate and the guide plate produce relative displacement in the horizontal direction, so that the tuning fork-type crystal in the guide hole of the guide plate can move to different wafer hole frames and adapt to different wafer hole frames. The tuning fork-type crystal with the same direction will fall into the corresponding wafer hole frame, while the tuning fork-type crystal with inconsistent direction will not be able to enter the wafer hole frame due to the obstruction of the terminal identification sheet in the wafer hole frame, and will slide off the wafer hole frame during the movement of the guide plate.

[0030] In step S4, the guide plate is also removed.

[0031] This solution uses a magnetic clamp, and each layer of the board is fixed by magnetic adsorption or clamping, without the need for screws. It is more suitable for shaking the chip and automatically encoding the chip, because in the clamp fixed with screws, it is difficult for the screws themselves to be completely flush with the clamp themselves. Whether it is protruding or recessed, it will affect the work of cleaning up excess chips after shaking the chip. In addition, for the clamp fixed with screws, on the one hand, only 4-8 screws can be fixed on all sides. Too many screws will reduce the operating efficiency and inevitably lead to uneven force on the board. Some places are subjected to excessive force, while some places are subjected to too little force, which may lead to a gap between the middle layer and the lower electrode layer. Or if the screws are not fixed firmly, the chip will drill into the gap between the middle layer and the lower electrode plate during the shaking process, resulting in defective products.

[0032] This solution is based on magnetic clamping, and a number of strong magnets are evenly arranged on the plane of the entire clamp, so the force between the layers is more uniform, and the wafer will not drill between the middle layer plate and the lower electrode plate. In addition, the middle layer plate in this solution is specially designed to select the direction of the tuning fork crystal, and only the tuning fork crystal with a specific direction can fall into the wafer hole frame. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] Figure 1This is a schematic diagram of the structure of the surface crystal automatic loading fixture layer of the present invention;

[0034] Figure 2 A schematic diagram of the wafer fixture layer structure formed by adding an upper electrode plate and an upper guard plate to the wafer fixture;

[0035] Figure 3 Schematic diagram of the structure of the upper electrode plate;

[0036] Figure 4 for Figure 3 Enlarged view of point A in the middle;

[0037] Figure 5 It is a schematic diagram of the structure of the middle layer board;

[0038] Figure 6 It is a schematic diagram of the wafer cavity frame in the middle layer board;

[0039] Figure 7 It is a schematic diagram of the tuning fork crystal structure;

[0040] Figure 8 It is a schematic diagram of the coordination between the tuning fork crystal and the crystal cavity frame;

[0041] Fig. 9 It is a schematic diagram of the structure of the elliptical positioning hole pin;

[0042] Fig.10 It is a schematic diagram of the cooperation between the perfect circle positioning hole pin and the magnetic base frame;

[0043] Fig.11 It is a schematic diagram of the relationship between the avoidance part after the magnetic base frame and the lower electrode plate are assembled;

[0044] Fig.12 Schematic diagram of the structure of the guide plate.

[0045] In the accompanying drawings, the component names represented by the reference numerals are listed as follows:

[0046] 1. Upper guard plate; 101. Avoiding clamping part; 2. Upper electrode plate; 2141. Hollow electrode area; 3. Intermediate layer plate; 31. Wafer hole frame; 311. End identification plate; 312. Limiting edge; 313. Avoiding edge; 4. Lower electrode plate; 5. Magnetic base frame; 51. First frame body; 52. Second frame body; 53. Magnet baffle; 54. Magnet through hole; 55. Clamping area; 6. Guide plate; 61. Guide hollow area; 7. Tuning fork watch crystal; 105. Perfect circular positioning hole; 106. Elliptical positioning hole; 107. Perfect circular positioning hole pin; 108. Elliptical positioning hole pin; 8. Lower guard plate. DETAILED DESCRIPTION

[0047] The principles and features of the present invention are described below in conjunction with the accompanying drawings. The examples given are only used to explain the present invention and are not used to limit the scope of the present invention.

[0048] like Figure 2 As shown, a wafer fixture includes an upper guard plate 1, an upper electrode plate 2, an intermediate layer plate 3, a lower electrode plate 4, a magnetic base frame 5 and a lower guard plate 8 arranged in sequence from top to bottom. The upper guard plate 1 and the upper electrode plate 2 are removed, and the remaining part is the wafer fixture. Figure 1 The film loading fixture shown in FIG. 1 further includes a guide plate 6. It should be noted that the guide plate 6 is not necessary and is only shown as an embodiment. Figure 1 The guide plate 6 shown in the figure is not flush with other layer plates in the vertical direction because a relative displacement in the horizontal direction needs to be generated between the guide plate 6 and the middle layer plate 3 during use.

[0049] The following describes the structure and function of each layer in turn:

[0050] refer to Fig.10 As shown, the magnetic base frame 5 includes a first frame body 51, a second frame body 52 and a magnet baffle 53 stacked together in sequence. The first frame body 51 and the second frame body 52 are 0.5 mm thick respectively, and are provided with through holes for placing magnets. The magnet baffle 53 is 0.15 mm thick, and a small hollow area may or may not be provided at a position adapted to the magnet through hole 54. The first frame body 51, the second frame body 52 and the magnet baffle 53 are fixed together by a thermal diffusion process and used as a whole. The first frame body 51 and the second frame body 52 have no magnetic attraction, and the magnet through holes 54 thereon are stacked together to form a magnet hole with a depth of 1 mm for placing magnets. There is no through hole at the corresponding position on the magnet baffle 53, or only a hollow hole smaller than the magnet is provided, so the magnet can be blocked, and the magnet baffle 53 has magnetic attraction, blocks and absorbs the magnet, and prevents the magnet from falling off from the magnet hole. The magnetic base frame 5 is provided with a hollow area, which corresponds to the position of the tuning fork-type crystal 7 to be processed, and at the same time enables the negative pressure airflow generated by the suction box to act on the tuning fork-type crystal 7 through the hollow area on the magnetic base frame 5, and also provides a channel for the target material to be sputtered onto the tuning fork-type crystal 7.

[0051] The lower electrode plate 4 and the upper electrode plate 2 are both made of non-magnetic materials. Therefore, when the lower electrode plate 4 and the upper electrode plate 2 are in contact with the magnetic base frame 5, no magnetic attraction will be generated. Figure 3 and Figure 4 As shown, hollow electrode areas 2141 are respectively provided on the lower electrode plate 4 and the upper electrode plate 2 to cover the tuning fork-type crystal 7, so that only the portion of the tuning fork-type crystal 7 that needs to be processed with the electrode is exposed. In the subsequent sputtering silver plating step, only the exposed electrode position on the tuning fork-type crystal 7 will be plated with a layer of metal film, and the shielded portion will not be plated with the metal film.

[0052] refer to Figure 5As shown, the intermediate plate 3 has magnetic attraction, and a wafer hole frame 31 is provided thereon. The wafer hole frame 31 is hollowed out and used to frame the tuning fork crystal 7 to be processed only on the horizontal plane, and to limit the movement of the tuning fork crystal 7 in the horizontal direction; Figure 6 As shown, one end of the wafer cavity frame 31 on the intermediate plate 3 is provided with an end identification piece 311, and the end identification piece 311 is located in the gap between the two forks of the tuning fork crystal 7, referring to Figure 7 As shown, since the tuning fork crystal 7 has this gap only at one end, it can be ensured that only the tuning fork crystal 7 that meets the direction requirements falls into the wafer hole frame 31. The length and width of the hollow wafer hole frame 31 on the intermediate plate 3 are slightly larger than the tuning fork crystal 7, so that the tuning fork crystal 7 can be placed in the wafer hole frame 31 as a whole. Figure 6 As shown, the four sides of the wafer cavity frame 31 include a limiting edge 312 and an avoiding edge 313, respectively. The limiting edge 312 is used to limit the displacement of the tuning fork crystal in the horizontal direction, and the avoiding edge 313 is used to reduce the possible interference between the tuning fork crystal and the wafer cavity frame 31 when the tuning fork crystal is subsequently operated. Generally speaking, the length of the limiting edge 312 is less than the length of the avoiding edge 313, that is, the possibility of interference is minimized. Since the wafer cavity frame 31 does not have any structure to support and constrain the tuning fork crystal 7 in the vertical direction, the intermediate layer plate 3 does not constrain the movement of the tuning fork crystal 7 in the vertical direction.

[0053] The upper guard plate 1 has magnetic attraction, and a hollow area is provided on the upper guard plate 1. The hollow area is adapted to the position of the tuning fork-type crystal 7 to be processed, so as to leave enough channel space for the sputtering of the target material during the coating operation of the tuning fork-type crystal 7.

[0054] The lower guard plate 8 has magnetic attraction, and a hollow area is also provided on the lower guard plate 8. The hollow area is adapted to the position of the tuning fork-type crystal 7 to be processed, so as to leave enough channel space for the sputtering of the target material during the coating operation of the tuning fork-type crystal 7.

[0055] It also includes a guide plate 6, which is made of a non-magnetic material. Fig.12 As shown, the guide plate 6 is provided with a guide hollow area 61, and the direction of the guide hollow area 61 is adapted to the direction of the wafer hole frame 31. The tuning fork-type crystal falling into the guide hollow area 61 is either forward or reverse, and will not have postures at other angles, thereby improving the hole entry rate; a clamping area 55 is provided at the edge of the guide plate 6.

[0056] The plate positioning mechanism is used to fix the relative positions of each layer of the plates, including the circular positioning holes 105 and the elliptical positioning holes 106 respectively arranged at the matching positions on the lower electrode plate 4, the middle layer plate 3, the upper electrode plate 2, and the upper protective plate 1, and the circular positioning hole pins 107 and the elliptical positioning hole pins 108 respectively arranged at the matching positions of the circular positioning holes 105 and the elliptical positioning holes 106 on the magnetic base frame 5.

[0057] The circular positioning hole 105 and the elliptical positioning hole 106 are respectively located on opposite sides; during automatic positioning installation, the plate body to be assembled (upper electrode plate 2, upper guard plate 1) is placed at an angle, and the circular positioning hole 105 is adapted first, and then the elliptical positioning hole 106 is adapted, which is convenient for positioning and installation.

[0058] The circular positioning hole pin 107 is provided with a circular through hole. Fig. 9 As shown, the elliptical positioning hole pin 108 is provided with an elliptical through hole. The setting of the perfect circular positioning hole pin 107 and the elliptical positioning hole pin 108 is to use the "pin body" of the positioning hole pin to position the lower electrode plate 4, the middle layer plate 3, the upper electrode plate 2 and the upper guard plate 1, and use the "hole body" of the positioning hole pin to adapt to the positioning pins on the mounting platform and the fixture carrier to achieve the positioning of the entire fixture. The sizes of the perfect circular positioning holes 105 and the elliptical positioning holes 106 on the lower electrode plate 4, the middle layer plate 3, the upper electrode plate 2 and the upper guard plate 1 are reduced in sequence, so that when they cooperate with the perfect circular positioning hole pin 107 or the elliptical positioning hole pin 108 on the positioning pin or the magnetic base frame 5, each layer can contact the positioning pin, and then cooperate with the magnetic base frame 5, the middle layer plate 3, and the upper guard plate 1 to firmly clamp the upper electrode plate 2 and the lower electrode plate 4, so that the upper electrode plate 2 and the lower electrode plate 4 can be accurately positioned. Positioning holes are also provided at corresponding positions on the lower guard plate 8.

[0059] Furthermore, the magnetic base frame 5 is provided with a clamping area 55. The clamping area 55 is used to automatically grab the magnetic base frame 5 with the help of an external robot or other automated device to achieve automated operation.

[0060] The lower guard plate 8, the lower electrode plate 4, the middle layer plate 3, the upper electrode plate 2 and the upper guard plate 1 do not interfere with the clamping area 55, and ensure that their own positions are not affected by the clamping of external clamping tools.

[0061] For example, the positions of the lower guard plate 8, the lower electrode plate 4, the middle layer plate 3, the upper electrode plate 2 and the upper guard plate 1 that are adapted to the clamping area 55 are all provided with a clamping avoidance portion 101, and the position of the clamping avoidance portion 101 is adapted to the clamping area 55, but its opening diameter is larger than the clamping area 55, so that the outer peripheral boundary of the plate body with the clamping avoidance portion 101 will not reach the position of the clamping area 55 of the magnetic base frame 5 at all, such as Fig.11As shown, it is ensured that the clamping tool only contacts the magnetic base frame during the clamping process, and does not touch the lower electrode plate 4, the middle layer plate 3, and the upper electrode plate 2, so as to avoid affecting their positions.

[0062] Before using the clamp for automatic wafer loading, prepare a shaking device, the shaking device is provided with a clamp carrier, the clamp carrier is provided with positioning pins corresponding to the perfect circle positioning hole pins and the elliptical positioning hole pins, and is also provided with a clamping component corresponding to the clamping area, the clamping component is used to fix the automatic wafer loading clamp placed on the clamp carrier, and also includes a driving mechanism, the driving mechanism is used to drive the clamp carrier to swing in the horizontal direction, the swinging action causes a relative displacement in the horizontal direction between the tuning fork type crystal 7 that is placed on the automatic wafer loading clamp and has not fallen into the chip hole frame and the clamp.

[0063] S1, pre-assemble the lower guard plate, magnetic base frame 5, lower electrode plate 4 and middle layer plate 3 based on the plate positioning mechanism, and hereinafter refer to this combination as a film loading fixture, and fix the pre-assembled film loading fixture on the fixture carrier based on the positioning pins and the first clamping component on the shaking device;

[0064] S2, pouring the tuning fork crystal 7 to be processed on the wafer fixture;

[0065] S3, start the shaking device to make the middle plate 3 and the tuning fork-type watch crystal 7 that has not fallen into the wafer hole frame 31 move relative to each other. The tuning fork-type watch crystal 7 that meets the requirements will have a chance to coincide with a wafer hole frame 31 and fall into it during a long enough horizontal swing process. Therefore, a suitable swinging time is set so that a watch crystal can always fall into each wafer hole frame 31. In practical applications, it is generally completed by shaking for tens of seconds.

[0066] S4, clean up the extra tuning fork crystals 7, check and replenish the wafer cavity frames 31 that have not stacked the wafers; in practice, generally only 1-2 wafer cavity frames 31 fail to automatically stack the wafers;

[0067] S5. Transfer the wafer loading fixture with tuning fork-type crystals 7 stacked in all wafer hole frames 31 to a suction box that can generate negative pressure. Based on the negative pressure generated by the suction box, the tuning fork-type crystals 7 in the lens hole frames are firmly adsorbed in the wafer hole frames 31. It should be noted here that there is no vertical constraint on the wafer in the wafer hole frame 31 of the middle layer plate 3. However, since the lower electrode plate 4 is below the middle layer plate 3, and the lower electrode plate 4 is hollowed out only at the position where coating is required, the lower electrode plate 4 will prevent the wafer from moving downward, and the negative pressure generated by the suction box is also acted on through the hollowing out on the lower electrode plate 4. On the chip, make the chip tightly adsorbed on the lower electrode plate 4 and stay in the chip hole frame 31; then cover the upper electrode plate 2 and the upper protective plate 1 based on the elliptical positioning hole 106 pin and the circular positioning hole 105 pin; the upper protective plate 1 has magnetic attraction, so the upper electrode plate 2 can be firmly clamped between the upper protective plate 1 and the middle layer plate 3, and the thickness of the middle layer plate 3 is slightly smaller than the thickness of the chip itself, so the upper electrode plate 2 and the lower electrode plate 4 will be tightly pressed on the chip, rather than on the middle layer plate 3, to ensure the stability of the relative position of the upper electrode plate 2 and the lower electrode plate 4 and the crystal.

[0068] At this point, the wafer fixture is covered with the upper electrode plate 2 and the upper protective plate 1 to form a complete wafer fixture.

[0069] S6, the wafer fixture loaded with the tuning fork type watch crystal 7 enters the next processing step.

[0070] Furthermore, step S1 also includes covering the guide plate 6 on the intermediate plate 3, and clamping the clamping area 55 on the guide plate 6 with the help of the second clamping component on the shaking device. It should be noted here that the clamping area 55 on the magnetic base frame 5 is clamped by the first clamping component, and the clamping area 55 on the guide plate 6 is clamped by the second clamping component. The second clamping component and the driving component are transmission-connected, so the second clamping component will drive the guide plate 6 to swing horizontally relative to the intermediate plate 3, so as to make the tuning fork-type crystal 7 in the guide hollow area 61 of the guide plate 6 and the different wafer hole frames 31 in the intermediate plate 3 to be aligned. Matching, the tuning fork-type crystal 7 with the wrong direction will not be able to fall into the chip hole frame 31 due to the obstruction of the end identification plate, and will slide away from the chip hole frame 31 as the guide plate 6 moves. The tuning fork-type crystal 7 with the right direction will fall into the chip hole frame 31, and then the shaking of the shaking device will not make it fall out of the chip hole frame 31 again. If it is shaken for a long enough time (generally not more than 1 minute), basically all the chip hole frames 31 can be automatically matched to the chip; on this basis, in step S4, it also includes the action of removing the guide plate 6, so the guide plate 6 can improve the efficiency of the tuning fork-type crystal 7 falling into the chip hole frame 31.

[0071] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims

1. A surface crystal automatic loading fixture, characterized in that: It includes a magnetic base frame, a lower electrode plate, and an intermediate layer plate which are arranged in sequence from bottom to top; The magnetic base frame is magnetic and is provided with a hollow area, and the hollow area corresponds to the position of the tuning fork-type watch crystal to be processed; The lower electrode plate is made of non-magnetic material and is provided with a hollow electrode area, so as to expose only the portion of the tuning fork crystal that needs to be plated with electrodes; The intermediate plate has magnetic attraction, and a wafer hole frame is arranged on it. The wafer hole frame is hollowed out and used to frame the tuning fork-type crystal to be processed to prevent the tuning fork-type crystal from moving in the horizontal direction; an end of the wafer hole frame is provided with an end identification piece, and the end identification piece is used to allow only the tuning fork-type crystal that meets the direction requirements to fall into the wafer hole frame; The corresponding positions of the magnetic base frame, the lower electrode plate and the middle layer plate are provided with a plate body positioning mechanism for use in conjunction with each other, so as to make the positions of the magnetic base frame, the lower electrode plate and the middle layer plate correspond to each other.

2. The automatic crystal loading fixture according to claim 1, characterized in that: The plate positioning mechanism includes circular positioning holes and elliptical positioning holes arranged on the lower electrode plate and the middle layer plate, and the circular positioning holes and the elliptical positioning holes are respectively located on the opposite sides of each plate body; the magnetic base frame is respectively provided with a perfect circle positioning hole pin and an elliptical positioning hole pin at the fitting positions of the circular positioning holes and the elliptical positioning holes, and the sizes of the circular positioning holes and the elliptical positioning holes arranged on the lower electrode plate and the middle layer plate become smaller successively.

3. The automatic crystal loading fixture according to claim 2, characterized in that: It also includes a guide plate, which is made of non-magnetic material, has a clamping area on its edge, and a wafer guide hollow area on its surface, and the direction of the wafer guide hollow area is compatible with the direction of the wafer hole frame.

4. The automatic crystal loading fixture according to claim 2, characterized in that: It also includes a lower guard plate, which has magnetic attraction and is provided with a hollow area identical to the magnetic base frame. The lower guard plate is used to shield the magnetic base frame body to prevent the target material from sputtering onto the surface of the magnetic base frame body.

5. The automatic crystal loading fixture according to any one of claims 1 to 3, characterized in that: The four sides of the chip hole frame respectively include limiting edges and avoiding edges. The limiting edges are used to limit the horizontal displacement of the tuning fork type crystal, and the avoiding edges are used to reduce the possible interference between the tuning fork type crystal and the chip hole frame when the tuning fork type crystal is operated.

6. The automatic crystal loading fixture according to claim 5, characterized in that: It also includes an upper electrode plate and an upper guard plate, wherein the upper electrode plate is made of a non-magnetic material and the upper guard plate is made of a magnetic material; The upper electrode plate is provided with a hollow electrode area for exposing only the portion of the tuning fork crystal that needs to be plated with electrodes; A hollow avoidance area is provided on the upper guard plate at a position corresponding to the tuning fork-type crystal to be processed, and the upper guard plate is used to clamp and fix the upper electrode plate by utilizing the magnetic attraction between the upper guard plate and the middle layer plate.

7. The automatic crystal loading fixture according to any one of claims 1 to 3, characterized in that: The two opposite sides of the lower guard plate and the magnetic base frame are provided with clamping areas for being clamped, and the positions of the lower electrode plate and the middle layer plate corresponding to the clamping areas are provided with pinch avoidance areas, and the size of the pinch avoidance areas is larger than the clamping areas, so as to ensure that when external equipment clamps the clamping areas of the lower guard plate and the magnetic base frame, it cannot touch the lower electrode plate and the middle layer plate, thereby ensuring that the relative position of the lower electrode plate and the middle layer plate is not affected by the clamping equipment.

8. An automatic wafer loading method for a surface crystal, characterized in that: It is realized by using the automatic crystal loading fixture described in any one of claims 1 to 7, using a shaking device, on which a fixture carrier is provided, on which positioning pins corresponding to the perfect circle positioning hole pins and the elliptical positioning hole pins are provided, and a first clamping component corresponding to the clamping area of ​​the magnetic substrate is provided, the first clamping component is used to fix the automatic crystal loading fixture placed on the clamp carrier, and also includes a driving mechanism, the driving mechanism is used to drive the clamp carrier to perform a swinging motion in the horizontal direction, the swinging motion causes a relative displacement in the horizontal direction between the tuning fork type crystal that is laid on the automatic crystal loading fixture and does not fall into the chip hole frame and the automatic crystal loading fixture.

9. The automatic loading method of watch crystal according to claim 8, characterized in that: The specific steps include: S1, assembling the lower guard plate, the magnetic base frame, the lower electrode plate and the intermediate layer plate to obtain a film loading fixture, and fixing the film loading fixture on the fixture carrier based on the positioning pins and the first clamping component on the shaking device; S2, pouring the tuning fork crystal to be processed on the wafer fixture; S3, start the shaking device to make the wafer clamp and the tuning fork-type crystal that has not fallen into the wafer hole frame move relative to each other, and the tuning fork-type crystal that meets the requirements falls into the wafer hole frame with a matching position; S4. Clean up the extra tuning fork crystals and check and fill in the hole frames where the wafers are not stacked; S5, transferring the wafer fixture with all wafer hole frames stacked with tuning fork-type crystals to a suction box that can generate negative pressure, so that the tuning fork-type crystals in the wafer hole frames are firmly adsorbed in the wafer hole frames based on the negative pressure generated by the suction box, and covering the upper electrode plate and the upper guard plate with the elliptical positioning hole pins and the circular positioning hole pins to obtain a wafer fixture carrying the tuning fork-type crystal to be processed; S6, enter the next processing step.

10. The automatic loading method of watch crystal according to claim 9, characterized in that: The shaking device is also provided with a second clamping component for clamping the guide plate, and the second clamping component is in transmission connection with the driving mechanism. When the driving mechanism is started, the second clamping component carries the clamped guide plate to swing in the horizontal direction; in the step S1, it also includes covering the guide plate on the middle layer plate, and in the step S4, it also includes removing the guide plate.

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