Corrosion-resistant pipeline and manufacturing method thereof
By attaching amorphous alumina and silicon nitride pipes with nested connections of 2n+1 layers or 2n+2 layers to the inner wall of the pipe, the problem of damage to existing corrosion-resistant pipes under the water hammer effect is solved, and higher corrosion resistance and impact resistance are achieved.
Patent Information
- Application Number
- CN202510163845.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-02-14
- Publication Date
- 2025-05-06
AI Technical Summary
Existing corrosion-resistant pipelines are prone to water hammer effects after sudden cutoff or opening, resulting in damage to the inner wall of the pipeline and poor impact resistance.
The corrosion-resistant tube is used to connect 2n+1 layer or 2n+2 layer close-fitting nesting. The odd-numbered layer is an amorphous alumina tube and the even-numbered layer is an amorphous silicon nitride tube. It is made by vapor deposition method and the corrosion resistance and impact resistance of amorphous alumina and silicon nitride are used to form a corrosion-resistant isolation tube.
It improves the corrosion-resistant scope and corrosion-resistant isolation stability of the pipeline, enhances impact resistance, and reduces the damage caused by impact force to the inner wall of the pipeline.
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Figure BDA0005271838200000051
Abstract
Description
Technical Field
[0001] The invention relates to the technical field of corrosion-resistant pipelines, and in particular to a corrosion-resistant pipeline and a manufacturing method thereof. Background Art
[0002] Pipelines may be used to transport corrosive fluids such as acids, alkalis, and salts, so corrosion-resistant pipes are required. In actual working conditions, it is necessary to cut off or open the fluid transportation according to the situation. After the pipeline is suddenly cut off or opened, the fluid in the pipeline will have a water hammer effect and impact the inner wall of the pipeline, which may cause damage to the pipeline and equipment.
[0003] Alumina (chemical formula: Al2O3) is a corrosion-resistant material with high chemical stability. It does not react with water, most acids and alkalis at room temperature. Alumina has a very high hardness, with a Mohs hardness of 9, second only to diamond. Pure alumina is a good insulator, but it can show a certain degree of conductivity at high temperatures or after being doped with other elements.
[0004] Silicon nitride (chemical formula: Si3N4) is also a corrosion-resistant material with stable chemical properties, good oxidation resistance and corrosion resistance. It is insoluble in cold water, hot water and dilute acid, but it reacts very slowly to concentrated sulfuric acid and concentrated sodium hydroxide solution. Silicon nitride has a very high hardness, with a Mohs hardness of 9 and a microhardness of about 32630 MPa. Silicon nitride has good electrical insulation, with a specific resistivity of 1015-1016 ohms at room temperature.
[0005] The corrosion resistance of silicon nitride and aluminum oxide varies depending on the chemical environment, and their applicable scopes are also different. Summary of the invention
[0006] The purpose of the present invention is to provide a corrosion-resistant pipeline to improve the application range and corrosion-resistant isolation stability of the corrosion-resistant pipeline. The present invention also provides a method for manufacturing the corrosion-resistant pipeline.
[0007] The present invention is achieved in that:
[0008] A corrosion-resistant pipeline comprises a pipeline substrate, on the inner wall of which 2n+1 layers of corrosion-resistant pipes are closely attached and nested, the odd-numbered layers of corrosion-resistant pipes are amorphous alumina pipes, the even-numbered layers of corrosion-resistant pipes are amorphous silicon nitride pipes, and n is a natural number greater than 0.
[0009] A corrosion-resistant pipeline comprises a pipeline substrate, on the inner wall of which 2n+2 layers of corrosion-resistant pipes are closely attached and nested, the odd-numbered layers of corrosion-resistant pipes are amorphous alumina pipes, the even-numbered layers of corrosion-resistant pipes are amorphous silicon nitride pipes, and n is a natural number greater than 0.
[0010] Preferably, the amorphous aluminum oxide tube is manufactured by a vapor deposition method, and the amorphous silicon nitride tube is manufactured by a vapor deposition method.
[0011] Preferably, the amorphous alumina tube is manufactured by atomic layer vapor deposition technology or pulsed plasma enhanced chemical vapor deposition technology.
[0012] A method for manufacturing a corrosion-resistant pipeline, the corrosion-resistant pipeline comprising a pipeline substrate and 2n+1 layers of corrosion-resistant pipes closely nested and connected, n being a natural number greater than 0, and assuming that a times pointer i=0, comprising the following steps:
[0013] S1. Vapor deposition and attachment of a layer of amorphous aluminum oxide tube on the inner wall of the pipeline substrate;
[0014] S2, vapor deposition and attachment of a layer of amorphous silicon nitride tube on the inner wall of the amorphous aluminum oxide tube;
[0015] S3, vapor deposition and attachment of a layer of amorphous aluminum oxide tube to the inner wall of the amorphous silicon nitride tube, let i=i+1;
[0016] S4. If i=n, the corrosion-resistant pipeline is obtained; if i<n, the process returns to step S2 and executes a cycle from step S2 to step S4.
[0017] A method for manufacturing a corrosion-resistant pipeline, the corrosion-resistant pipeline comprising a pipeline substrate and 2n+2 layers of corrosion-resistant pipes closely nested and connected, n being a natural number greater than 0, and assuming that a times pointer i=0, comprising the following steps:
[0018] S1. Vapor deposition and attachment of a layer of amorphous aluminum oxide tube on the inner wall of the pipeline substrate;
[0019] S2, vapor deposition and attachment of a layer of amorphous silicon nitride tube on the inner wall of the amorphous aluminum oxide tube;
[0020] S3, vapor deposition and attachment of a layer of amorphous aluminum oxide tube to the inner wall of the amorphous silicon nitride tube, let i=i+1;
[0021] S4. If i=n, a layer of amorphous silicon nitride tube is attached to the inner wall of the amorphous aluminum oxide tube by vapor deposition to obtain the corrosion-resistant pipeline; if i<n, return to step S2 to execute a cycle from step S2 to step S4.
[0022] Preferably, the amorphous alumina tube is manufactured by atomic layer vapor deposition technology or pulsed plasma enhanced chemical vapor deposition technology.
[0023] Preferably, the method for vapor deposition of amorphous alumina tubes comprises the following steps: Sa1, placing a substrate and a hot wire catalyst for alumina vapor deposition in a deposition chamber; Sa2, sealing the deposition chamber and evacuating the chamber; Sa3, heating the hot wire catalyst for alumina vapor deposition to the alumina vapor deposition catalytic temperature, and heating the substrate to the amorphous alumina vapor deposition temperature; Sa4, introducing trimethylaluminum gas and water vapor for a period of time to form a layer of alumina tube on the inner wall of the substrate; wherein the trimethylaluminum gas flow rate is 0.5 to 1 cm 3 / min, water vapor flow rate is 1~2cm 3 / min, the hot wire catalyst for alumina vapor deposition is an alloy of 5-15% Ni, 10-30% Cr, and 60-80% Fe, the catalytic temperature for alumina vapor deposition is 600-800°C, and the temperature for amorphous alumina vapor deposition is 100-300°C.
[0024] Further preferably, in the step Sa1, the hot wire catalyst for aluminum oxide vapor deposition is disposed at the center line of the pipeline of the substrate.
[0025] Preferably, the method for vapor deposition of amorphous silicon nitride tubes comprises the following steps: Sb1, placing a substrate and a hot wire catalyst for silicon nitride vapor deposition in a deposition chamber; Sb2, sealing the deposition chamber and evacuating the chamber; Sb3, heating the hot wire catalyst for silicon nitride vapor deposition to a silicon nitride vapor deposition catalytic temperature, and heating the substrate to an amorphous silicon nitride vapor deposition temperature; Sb4, introducing silicon hydride gas, ammonia gas and hydrogen gas for a period of time to form a layer of silicon nitride tube on the inner wall of the substrate; wherein the flow rate of the silicon hydride gas is 5 to 8 cm 3 / min, ammonia flow rate is 6~12cm 3 / min, hydrogen flow rate is 20~30cm 3 / min, the hot wire catalyst for silicon nitride vapor deposition is a tungsten wire after surface carburization treatment, the catalytic temperature for silicon nitride vapor deposition is 1700-1950°C, and the temperature for amorphous silicon nitride vapor deposition is 40-300°C.
[0026] Further preferably, in the step Sb1, the hot wire catalyst for silicon nitride vapor deposition is arranged at the center line of the pipeline of the substrate.
[0027] Preferably, before performing step S1, the inner wall of the pipeline substrate is cleaned.
[0028] Further preferably, the cleaning process includes a chemical cleaning step or an ultrasonic cleaning step.
[0029] The beneficial effects of the present invention include:
[0030] Traditionally, amorphous oxides are generally considered to have high brittleness, which is mainly due to their lack of effective plastic deformation mechanism. Due to the brittleness of amorphous oxides, their impact resistance is usually poor and they are prone to breakage under impact loads.
[0031] However, the study found that amorphous alumina exhibits significant microplasticity at room temperature. Unlike traditional brittle materials, amorphous alumina can deform without breaking at strains up to 50% through viscous creep and shear band slip mechanisms. Amorphous alumina exhibits excellent impact resistance at high strain rates.
[0032] 1. In the corrosion-resistant pipeline of the present invention, 2n+1 layers of tightly nested corrosion-resistant pipes form a corrosion-resistant isolation pipe. In the corrosion-resistant isolation pipe, the corrosion resistance of amorphous aluminum oxide and amorphous silicon nitride is used to improve the corrosion resistance application range of the pipeline, and the impact force of the outermost amorphous aluminum oxide tube far away from the inner wall of the pipeline matrix is also used. The impact resistance of the amorphous silicon nitride tube is better than that of the amorphous aluminum oxide tube to maintain the integrity of the shape of the corrosion-resistant isolation pipe, the micro-plasticity of the amorphous aluminum oxide tube adjacent to the pipeline matrix side is used to buffer and absorb the impact force energy transmitted by the amorphous silicon nitride tube, and the amorphous aluminum oxide tube attached to one side of the pipeline matrix is used to make the inner wall of the pipeline smoother, thereby reducing the adverse effect of brittleness on the amorphous silicon nitride tube under the action of impact force, improving the ability of the corrosion-resistant isolation pipe to remain intact under impact force, and overall improving the application range and corrosion-resistant isolation stability of the corrosion-resistant pipeline.
[0033] 2. In the corrosion-resistant pipeline of the present invention, 2n+2 layers of tightly nested and connected corrosion-resistant pipes form a corrosion-resistant isolation pipe. In the corrosion-resistant isolation pipe, the corrosion resistance of amorphous aluminum oxide and amorphous silicon nitride is used to improve the corrosion resistance application range of the pipeline, and the impact resistance of amorphous silicon nitride pipe is better than that of amorphous aluminum oxide pipe to maintain the integrity of the shape of the corrosion-resistant isolation pipe. The micro-plasticity of the amorphous aluminum oxide pipe adjacent to the side of the pipeline matrix is used to buffer and absorb the impact energy transmitted by the amorphous silicon nitride pipe. The amorphous aluminum oxide pipe attached to one side of the pipeline matrix makes the inner wall of the pipeline smoother, thereby reducing the adverse effect of brittleness on the amorphous silicon nitride pipe under the action of impact force, improving the ability of the corrosion-resistant isolation pipe to remain intact under impact force, and improving the application range and corrosion-resistant isolation stability of the corrosion-resistant pipeline as a whole.
[0034] 3. In the corrosion-resistant pipeline of the present invention, when the amorphous aluminum oxide tube and the amorphous silicon nitride tube are both made by the vapor deposition method, the amorphous aluminum oxide and the amorphous silicon nitride will not be converted into crystals, and no chemical reaction will occur. The vapor deposition also ensures that a layer of amorphous aluminum oxide tube adjacent to the pipeline substrate is closely connected to the pipeline substrate, and also ensures that a layer of adjacent amorphous aluminum oxide tube and a layer of amorphous silicon nitride are closely connected.
[0035] 4. Whether the amorphous aluminum oxide film generated by chemical vapor deposition (CVD) is dense depends on the specific preparation process and deposition conditions. In the corrosion-resistant pipeline of the present invention, compared with CVD, the atomic layer deposition (ALD) technology can produce an amorphous aluminum oxide film with higher density and low defect density. When pulsed plasma enhanced chemical vapor deposition (PECVD) is used, a colorless, transparent, smooth and dense amorphous aluminum oxide film can be produced by controlling the deposition temperature and working gas pressure.
[0036] 5. In the method for manufacturing the corrosion-resistant pipeline of the present invention, when both the amorphous aluminum oxide tube and the amorphous silicon nitride tube are manufactured by the vapor deposition method, the amorphous aluminum oxide and the amorphous silicon nitride will not be converted into crystals, and no chemical reaction will occur. The vapor deposition also ensures that a layer of amorphous aluminum oxide tube adjacent to the pipeline substrate is closely connected to the pipeline substrate, and also ensures that a layer of adjacent amorphous aluminum oxide tube and a layer of amorphous silicon nitride are closely connected.
[0037] 6. In the method for manufacturing the corrosion-resistant pipe of the present invention, a hot wire catalyst for alumina vapor deposition is used to improve the vapor deposition efficiency. The deposition chamber is sealed and evacuated in step Sa2 to reduce the adverse effects of impurities on the quality of vapor deposition. By controlling the vapor deposition conditions, the uniformity and density of the amorphous alumina tube formed by deposition are improved, and the defect density of the amorphous alumina tube formed by deposition is reduced.
[0038] 7. In the method for manufacturing the corrosion-resistant pipeline of the present invention, in the step Sa1, a hot wire catalyst for vapor deposition of aluminum oxide is arranged at the center line of the pipeline of the substrate, thereby improving the consistency of the wall thickness of the amorphous aluminum oxide tube.
[0039] 8. In the method for manufacturing the corrosion-resistant pipe of the present invention, a hot wire catalyst for silicon nitride vapor deposition is used to improve the vapor deposition efficiency. The deposition chamber is sealed and evacuated in step Sb2 to reduce the adverse effects of impurities on the quality of vapor deposition. By controlling the vapor deposition conditions, the uniformity and density of the amorphous silicon nitride tube formed by deposition are improved, and the defect density of the amorphous silicon nitride tube formed by deposition is reduced.
[0040] 9. In the method for manufacturing the corrosion-resistant pipeline of the present invention, in the step Sb1, a hot wire catalyst for silicon nitride vapor deposition is arranged at the center line of the pipeline of the substrate, thereby improving the consistency of the wall thickness of the amorphous silicon nitride tube.
[0041] 10. In the method for manufacturing the corrosion-resistant pipeline of the present invention, before performing step S1, the inner wall of the pipeline substrate is cleaned, so as to improve the close connection effect between a layer of amorphous aluminum oxide tube adjacent to the pipeline substrate and the pipeline substrate. DETAILED DESCRIPTION
[0042] The present invention is described below in the form of embodiments to assist those skilled in the art in understanding and implementing the present invention. Unless otherwise specified, the following embodiments and the technical terms therein should not be understood without departing from the technical knowledge background of the technical field.
[0043] The corrosion resistance of silicon nitride and alumina varies depending on the chemical environment. First, silicon nitride has better corrosion resistance than alumina in non-oxidizing acidic environments. Silicon nitride performs better in non-oxidizing acids (such as dilute sulfuric acid and hydrochloric acid) because its chemical bond (Si-N) is stable and the corrosion rate is low. However, oxidation or decomposition may occur in strong oxidizing acids (such as concentrated sulfuric acid and nitric acid) or high-temperature acidic environments. Alumina has poor tolerance to strong acids (such as concentrated sulfuric acid and hydrochloric acid), and is especially susceptible to corrosion at high temperatures. However, high-purity alumina has a certain resistance to weak acids (such as acetic acid). Second, alumina has better corrosion resistance than silicon nitride in alkaline environments. Silicon nitride may undergo hydrolysis in strong alkaline solutions (such as concentrated sodium hydroxide), resulting in gradual degradation of the material. Alumina has strong tolerance to alkaline environments, especially high stability at room temperature, but may be corroded in high-temperature molten alkalis (such as NaOH melts). Third, the stability of alumina in high-temperature oxidizing environments is significantly better than that of silicon nitride. Silicon nitride will form a SiO2 protective layer in a high temperature (>1000℃) oxidizing atmosphere, but long-term exposure may cause the protective layer to rupture and accelerate internal oxidation. Alumina itself is Al2O3, which is extremely stable in a high-temperature oxidizing environment (melting point 2054℃), and almost no further oxidation occurs. Fourth, among other corrosive media, silicon nitride has poor wettability to certain molten metals (such as aluminum and zinc) and good corrosion resistance; while alumina has high tolerance to molten salts (such as NaCl-KCl). Both have good stability in water, but silicon nitride may slowly hydrolyze if exposed to high temperature and high pressure water vapor for a long time. Comprehensive comparison, the selection strategy of silicon nitride and alumina corrosion-resistant materials in different chemical environments is shown in Table 1.
[0044] Table 1 Selection strategies of silicon nitride and alumina corrosion-resistant materials in different chemical environments
[0045]
[0046] There are three crystal forms of aluminum oxide, namely α-Al2O3, β-Al2O3, and γ-Al2O3. Amorphous aluminum oxide is a special aluminum oxide structure, whose atomic arrangement shows the characteristics of "short-range order and long-range disorder". Unlike common crystalline aluminum oxide, its microstructure is relatively uniform and does not have the grain boundaries and defects commonly found in crystalline materials. Amorphous aluminum oxide film lacks a long-range ordered crystal structure, which makes the material show higher stability in chemical reactions. The high entropy effect of the amorphous structure can inhibit the diffusion of corrosive media, thereby reducing the occurrence of corrosion reactions. Amorphous aluminum oxide film easily forms a dense passivation film on the surface, which can effectively prevent the contact between corrosive media (such as water, acid, alkali, etc.) and the base material.
[0047] Traditionally, amorphous oxides are generally considered to have high brittleness, which is mainly due to their lack of effective plastic deformation mechanism. Due to the brittleness of amorphous oxides, their impact resistance is usually poor and they are prone to breakage under impact loads.
[0048] However, the study found that amorphous alumina exhibits significant microplasticity at room temperature. Unlike traditional brittle materials, amorphous alumina can deform without breaking at strains up to 50% through viscous creep and shear band slip mechanisms. Amorphous alumina exhibits excellent impact resistance at high strain rates.
[0049] Amorphous aluminum oxide can be converted into aluminum oxide crystals by heating. Among the three crystal forms of aluminum oxide, α-Al2O3 is the most stable.
[0050] There are two crystal forms of silicon nitride, α-Si3N4 and β-Si3N4. The atomic arrangement of amorphous silicon nitride shows the characteristics of "short-range order and long-range disorder". Although its hardness is lower than that of crystalline silicon nitride, it still has high hardness and wear resistance. Amorphous silicon nitride is chemically stable at room temperature, has good corrosion resistance and thermal stability, and can maintain its performance in high temperature environments.
[0051] Amorphous silicon nitride lacks a long-range ordered crystal structure, and its internal chemical bond network is relatively disordered. This disordered structure makes it easier for cracks to expand when the material is subjected to external force, showing high brittleness. The brittleness of amorphous silicon nitride is also affected by the preparation process. For example, during the chemical vapor deposition (CVD) process, deposition conditions (such as temperature, gas flow rate, etc.) will affect the stress state and defect density of the film, thereby affecting its brittleness. Although amorphous silicon nitride has high brittleness, it exhibits certain impact resistance in certain applications. When amorphous silicon nitride is impacted, its internal amorphous structure can absorb energy through local atomic rearrangement and shear band propagation, thereby resisting the rapid expansion of cracks to a certain extent.
[0052] Silicon nitride film has high fracture toughness, and its value is usually 5-10MPa·m 1 / 2 This higher fracture toughness enables it to effectively resist fracture when subjected to impact or rapid load, showing better impact resistance than traditional ceramic materials (such as alumina).
[0053] Amorphous silicon nitride can be converted into silicon nitride crystals by heating. Of the two crystal forms of silicon nitride, β-Si3N4 is the most stable.
[0054] Aluminum oxide and silicon nitride react under high temperature conditions to generate silicon dioxide and aluminum nitride. The specific reaction formula is:
[0055] 2Al2O3+Si3N4→(high temperature)→3SiO2+4AlN
[0056] In the vapor deposition of the present invention, the gas volume is the volume under the conditions of temperature 25°C and pressure 101.325 kPa, and the water vapor volume is the volume under the conditions of temperature 100°C and pressure 101.325 kPa.
[0057] Embodiment 1: A corrosion-resistant pipeline comprises a pipeline substrate, on the inner wall of which 2n+1 layers of corrosion-resistant pipes are tightly attached and nested, the odd-numbered layers of corrosion-resistant pipes are amorphous aluminum oxide pipes, the even-numbered layers of corrosion-resistant pipes are amorphous silicon nitride pipes, and n is a natural number greater than 0.
[0058] The smoother the inner wall of the pipe base is, the better. Generally, the inner wall of the pipe base can be made smoother by pickling and drying, or grinding and removing burrs.
[0059] The amorphous aluminum oxide tube is formed by a vapor deposition method, and the amorphous silicon nitride tube is formed by a vapor deposition method. When both the amorphous aluminum oxide tube and the amorphous silicon nitride tube are formed by a vapor deposition method, the amorphous aluminum oxide and the amorphous silicon nitride will not be converted into crystals, and no chemical reaction will occur.
[0060] Amorphous aluminum oxide tubes are preferably made by atomic layer vapor deposition technology or pulse plasma enhanced chemical vapor deposition technology. Whether the amorphous aluminum oxide film generated by chemical vapor deposition (CVD) is dense depends on the specific preparation process and deposition conditions. Compared with CVD, atomic layer deposition (ALD) technology can produce amorphous aluminum oxide films with higher density and low defect density. When pulse plasma enhanced chemical vapor deposition (PECVD) is used, a colorless, transparent, smooth and dense amorphous aluminum oxide film can be prepared by controlling the deposition temperature and working gas pressure.
[0061] Embodiment 2: A corrosion-resistant pipeline comprises a pipeline substrate, on the inner wall of which 2n layers of corrosion-resistant pipes are tightly attached in a nested manner, the odd-numbered layers of corrosion-resistant pipes are amorphous alumina pipes, the even-numbered layers of corrosion-resistant pipes are amorphous silicon nitride pipes, and n is a natural number greater than 1.
[0062] The smoother the inner wall of the pipe base is, the better. Generally, the inner wall of the pipe base can be made smoother by pickling and drying, or grinding and removing burrs.
[0063] The amorphous aluminum oxide tube is formed by a vapor deposition method, and the amorphous silicon nitride tube is formed by a vapor deposition method. When both the amorphous aluminum oxide tube and the amorphous silicon nitride tube are formed by a vapor deposition method, the amorphous aluminum oxide and the amorphous silicon nitride will not be converted into crystals, and no chemical reaction will occur.
[0064] Amorphous aluminum oxide tubes are preferably made by atomic layer vapor deposition technology or pulse plasma enhanced chemical vapor deposition technology. Whether the amorphous aluminum oxide film generated by chemical vapor deposition (CVD) is dense depends on the specific preparation process and deposition conditions. Compared with CVD, atomic layer deposition (ALD) technology can produce amorphous aluminum oxide films with higher density and low defect density. When pulse plasma enhanced chemical vapor deposition (PECVD) is used, a colorless, transparent, smooth and dense amorphous aluminum oxide film can be prepared by controlling the deposition temperature and working gas pressure.
[0065] Embodiment 3: A method for manufacturing a corrosion-resistant pipeline, the corrosion-resistant pipeline comprising a pipeline substrate and 2n+1 layers of corrosion-resistant pipes closely nested and connected, n being a natural number greater than 0, and the number pointer i=0, comprising the following steps:
[0066] S1. Vapor deposition and attachment of a layer of amorphous aluminum oxide tube on the inner wall of the pipeline substrate;
[0067] S2, vapor deposition and attachment of a layer of amorphous silicon nitride tube on the inner wall of the amorphous aluminum oxide tube;
[0068] S3, vapor deposition and attachment of a layer of amorphous aluminum oxide tube to the inner wall of the amorphous silicon nitride tube, let i=i+1;
[0069] S4. If i=n, the corrosion-resistant pipeline is obtained; if i<n, the process returns to step S2 and executes a cycle from step S2 to step S4.
[0070] Preferably, the amorphous alumina tube is manufactured by atomic layer vapor deposition technology or pulsed plasma enhanced chemical vapor deposition technology.
[0071] Preferably, before performing step S1, it is best to clean, polish or otherwise treat the inner wall of the pipe substrate so that the inner wall of the pipe substrate becomes smoother.
[0072] Embodiment 4: A method for manufacturing a corrosion-resistant pipeline, the corrosion-resistant pipeline comprising a pipeline substrate and 2n+1 layers of corrosion-resistant pipes closely nested and connected, n=1, and the number pointer i=0, comprising the following steps:
[0073] S0. Cleaning the inner wall of the pipeline substrate; the cleaning process may be chemical cleaning or ultrasonic cleaning;
[0074] S1. Vapor deposition and attachment of a layer of amorphous aluminum oxide tube on the inner wall of the pipeline substrate;
[0075] S2, vapor deposition and attachment of a layer of amorphous silicon nitride tube on the inner wall of the amorphous aluminum oxide tube;
[0076] S3, vapor deposition and attachment of a layer of amorphous aluminum oxide tube on the inner wall of the amorphous silicon nitride tube, let i=i+1, i=1 at this time;
[0077] S4. Since i=n, the corrosion-resistant pipeline is obtained.
[0078] In step S1 and step S3, the method for vapor deposition of amorphous alumina tubes includes the following steps: Sa1, placing a substrate and a hot wire catalyst for alumina vapor deposition in a deposition chamber; Sa2, sealing the deposition chamber and evacuating the chamber; Sa3, heating the hot wire catalyst for alumina vapor deposition to a catalytic temperature for alumina vapor deposition, and heating the substrate to an amorphous alumina vapor deposition temperature; Sa4, introducing trimethylaluminum gas and water vapor for a period of time to form a layer of alumina tube on the inner wall of the substrate; wherein the flow rate of trimethylaluminum gas is 0.5 to 1 cm 3 / min, water vapor flow rate is 1~2cm 3 / min, the hot wire catalyst for alumina vapor deposition is an alloy of 5-15% Ni, 10-30% Cr, and 60-80% Fe, the catalytic temperature for alumina vapor deposition is 600-800°C, and the temperature for amorphous alumina vapor deposition is 100-300°C.
[0079] In step S2, the method for vapor deposition of amorphous silicon nitride tubes includes the following steps: Sb1, placing a substrate and a hot wire catalyst for silicon nitride vapor deposition in a deposition chamber; Sb2, sealing the deposition chamber and evacuating the chamber; Sb3, heating the hot wire catalyst for silicon nitride vapor deposition to a silicon nitride vapor deposition catalytic temperature, and heating the substrate to an amorphous silicon nitride vapor deposition temperature; Sb4, introducing silicon hydride gas, ammonia gas and hydrogen gas for a period of time to form a layer of silicon nitride tube on the inner wall of the substrate; wherein the flow rate of the silicon hydride gas is 5 to 8 cm 3 / min, ammonia flow rate is 6~12cm 3 / min, hydrogen flow rate is 20~30cm 3 / min, the hot wire catalyst for silicon nitride vapor deposition is a tungsten wire after surface carburization treatment, the catalytic temperature for silicon nitride vapor deposition is 1700-1950°C, and the temperature for amorphous silicon nitride vapor deposition is 40-300°C.
[0080] In this embodiment, in the step Sa1, the hot wire catalyst for aluminum oxide vapor deposition is disposed at the center line of the pipeline of the substrate; in the step Sb1, the hot wire catalyst for silicon nitride vapor deposition is disposed at the center line of the pipeline of the substrate.
[0081] Embodiment 5: A method for manufacturing a corrosion-resistant pipeline, the corrosion-resistant pipeline comprising a pipeline substrate and 2n+1 layers of tightly nested corrosion-resistant pipes, n=2, and the number pointer i=0, comprising the following steps:
[0082] S0. Cleaning the inner wall of the pipeline substrate; the cleaning process may be chemical cleaning or ultrasonic cleaning;
[0083] S1. Vapor deposition and attachment of a layer of amorphous aluminum oxide tube on the inner wall of the pipeline substrate;
[0084] S2, vapor deposition and attachment of a layer of amorphous silicon nitride tube on the inner wall of the amorphous aluminum oxide tube;
[0085] S3, vapor deposition and attachment of a layer of amorphous aluminum oxide tube on the inner wall of the amorphous silicon nitride tube, let i=i+1, i=1 at this time;
[0086] S4. Since i<n, return to step S2 to execute the cycle from step S2 to step S4, that is, vapor deposition and attachment of a layer of amorphous silicon nitride tube to the inner wall of the amorphous aluminum oxide tube, and then execute step S3, that is, vapor deposition and attachment of a layer of amorphous aluminum oxide tube to the inner wall of the amorphous silicon nitride tube, let i=i+1, at this time i=2; then execute step S4, since i=n, the corrosion-resistant pipeline is obtained.
[0087] In step S1 and step S3, the method for vapor deposition of amorphous alumina tubes includes the following steps: Sa1, placing a substrate and a hot wire catalyst for alumina vapor deposition in a deposition chamber; Sa2, sealing the deposition chamber and evacuating the chamber; Sa3, heating the hot wire catalyst for alumina vapor deposition to a catalytic temperature for alumina vapor deposition, and heating the substrate to an amorphous alumina vapor deposition temperature; Sa4, introducing trimethylaluminum gas and water vapor for a period of time to form a layer of alumina tube on the inner wall of the substrate; wherein the flow rate of trimethylaluminum gas is 0.5 to 1 cm 3 / min, water vapor flow rate is 1~2cm 3 / min, the hot wire catalyst for alumina vapor deposition is an alloy of 5-15% Ni, 10-30% Cr, and 60-80% Fe, the catalytic temperature for alumina vapor deposition is 600-800°C, and the temperature for amorphous alumina vapor deposition is 100-300°C.
[0088] In step S2, the method for vapor deposition of amorphous silicon nitride tubes includes the following steps: Sb1, placing a substrate and a hot wire catalyst for silicon nitride vapor deposition in a deposition chamber; Sb2, sealing the deposition chamber and evacuating the chamber; Sb3, heating the hot wire catalyst for silicon nitride vapor deposition to a silicon nitride vapor deposition catalytic temperature, and heating the substrate to an amorphous silicon nitride vapor deposition temperature; Sb4, introducing silicon hydride gas, ammonia gas and hydrogen gas for a period of time to form a layer of silicon nitride tube on the inner wall of the substrate; wherein the flow rate of the silicon hydride gas is 5 to 8 cm 3 / min, ammonia flow rate is 6~12cm 3 / min, hydrogen flow rate is 20~30cm 3 / min, the hot wire catalyst for silicon nitride vapor deposition is a tungsten wire after surface carburization treatment, the catalytic temperature for silicon nitride vapor deposition is 1700-1950°C, and the temperature for amorphous silicon nitride vapor deposition is 40-300°C.
[0089] In this embodiment, in the step Sa1, the hot wire catalyst for aluminum oxide vapor deposition is disposed at the center line of the pipeline of the substrate; in the step Sb1, the hot wire catalyst for silicon nitride vapor deposition is disposed at the center line of the pipeline of the substrate.
[0090] Embodiment 6: A method for manufacturing a corrosion-resistant pipeline, the corrosion-resistant pipeline comprising a pipeline substrate and 2n layers of corrosion-resistant pipes closely nested and connected, n being a natural number greater than 1, and setting the number pointer i=0, comprising the following steps:
[0091] S1. Vapor deposition and attachment of a layer of amorphous aluminum oxide tube on the inner wall of the pipeline substrate;
[0092] S2, vapor deposition and attachment of a layer of amorphous silicon nitride tube on the inner wall of the amorphous aluminum oxide tube;
[0093] S3, vapor deposition and attachment of a layer of amorphous aluminum oxide tube to the inner wall of the amorphous silicon nitride tube, let i=i+1;
[0094] S4. If i=n-1, a layer of amorphous silicon nitride tube is attached to the inner wall of the amorphous aluminum oxide tube by vapor deposition to obtain the corrosion-resistant pipeline; if i<n-1, return to step S2 to execute the cycle from step S2 to step S4.
[0095] Preferably, the amorphous alumina tube is manufactured by atomic layer vapor deposition technology or pulsed plasma enhanced chemical vapor deposition technology.
[0096] Preferably, before performing step S1, it is best to clean the inner wall of the pipeline substrate.
[0097] Embodiment 7: A method for manufacturing a corrosion-resistant pipeline, the corrosion-resistant pipeline comprising a pipeline substrate and 2n layers of corrosion-resistant pipes closely nested and connected, n=2, and the number pointer i=0, comprising the following steps:
[0098] S0. Cleaning the inner wall of the pipeline substrate; the cleaning process may be chemical cleaning or ultrasonic cleaning;
[0099] S1. Vapor deposition and attachment of a layer of amorphous aluminum oxide tube on the inner wall of the pipeline substrate;
[0100] S2, vapor deposition and attachment of a layer of amorphous silicon nitride tube on the inner wall of the amorphous aluminum oxide tube;
[0101] S3, vapor deposition and attachment of a layer of amorphous aluminum oxide tube on the inner wall of the amorphous silicon nitride tube, let i=i+1, i=1 at this time;
[0102] S4. Since i=n-1, a layer of amorphous silicon nitride tube is attached to the inner wall of the amorphous aluminum oxide tube by vapor deposition to obtain the corrosion-resistant pipeline.
[0103] In step S1 and step S3, the method for vapor deposition of amorphous alumina tubes includes the following steps: Sa1, placing a substrate and a hot wire catalyst for alumina vapor deposition in a deposition chamber; Sa2, sealing the deposition chamber and evacuating the chamber; Sa3, heating the hot wire catalyst for alumina vapor deposition to a catalytic temperature for alumina vapor deposition, and heating the substrate to an amorphous alumina vapor deposition temperature; Sa4, introducing trimethylaluminum gas and water vapor for a period of time to form a layer of alumina tube on the inner wall of the substrate; wherein the flow rate of trimethylaluminum gas is 0.5 to 1 cm 3 / min, water vapor flow rate is 1~2cm 3 / min, the hot wire catalyst for alumina vapor deposition is an alloy of 5-15% Ni, 10-30% Cr, and 60-80% Fe, the catalytic temperature for alumina vapor deposition is 600-800°C, and the temperature for amorphous alumina vapor deposition is 100-300°C.
[0104] In step S2 and step S4, the method for vapor deposition of amorphous silicon nitride tubes includes the following steps: Sb1, placing a substrate and a hot wire catalyst for silicon nitride vapor deposition in a deposition chamber; Sb2, sealing the deposition chamber and evacuating the chamber; Sb3, heating the hot wire catalyst for silicon nitride vapor deposition to a silicon nitride vapor deposition catalytic temperature, and heating the substrate to an amorphous silicon nitride vapor deposition temperature; Sb4, introducing silicon hydride gas, ammonia gas and hydrogen gas for a period of time to form a layer of silicon nitride tube on the inner wall of the substrate; wherein the flow rate of the silicon hydride gas is 5 to 8 cm 3 / min, ammonia flow rate is 6~12cm 3 / min, hydrogen flow rate is 20~30cm 3 / min, the hot wire catalyst for silicon nitride vapor deposition is a tungsten wire after surface carburization treatment, the catalytic temperature for silicon nitride vapor deposition is 1700-1950°C, and the temperature for amorphous silicon nitride vapor deposition is 40-300°C.
[0105] In this embodiment, in the step Sa1, the hot wire catalyst for aluminum oxide vapor deposition is disposed at the center line of the pipeline of the substrate; in the step Sb1, the hot wire catalyst for silicon nitride vapor deposition is disposed at the center line of the pipeline of the substrate.
[0106] Embodiment 8: A method for manufacturing a corrosion-resistant pipeline, the corrosion-resistant pipeline comprising a pipeline substrate and 2n layers of corrosion-resistant pipes closely nested and connected, n=3, and the number pointer i=0, comprising the following steps:
[0107] S0. Cleaning the inner wall of the pipeline substrate; the cleaning process may be chemical cleaning or ultrasonic cleaning;
[0108] S1. Vapor deposition and attachment of a layer of amorphous aluminum oxide tube on the inner wall of the pipeline substrate;
[0109] S2, vapor deposition and attachment of a layer of amorphous silicon nitride tube on the inner wall of the amorphous aluminum oxide tube;
[0110] S3, vapor deposition and attachment of a layer of amorphous aluminum oxide tube on the inner wall of the amorphous silicon nitride tube, let i=i+1, i=1 at this time;
[0111] S4. Since i<n-1, return to step S2 to execute the cycle from step S2 to step S4, that is, a layer of amorphous silicon nitride tube is attached to the inner wall of the amorphous aluminum oxide tube by vapor deposition, and then execute step S3, that is, a layer of amorphous aluminum oxide tube is attached to the inner wall of the amorphous silicon nitride tube by vapor deposition, let i=i+1, at this time i=2; then execute step S4, since i=n-1, a layer of amorphous silicon nitride tube is attached to the inner wall of the amorphous aluminum oxide tube by vapor deposition to obtain the corrosion-resistant pipeline.
[0112] In step S1 and step S3, the method for vapor deposition of amorphous alumina tubes includes the following steps: Sa1, placing a substrate and a hot wire catalyst for alumina vapor deposition in a deposition chamber; Sa2, sealing the deposition chamber and evacuating the chamber; Sa3, heating the hot wire catalyst for alumina vapor deposition to a catalytic temperature for alumina vapor deposition, and heating the substrate to an amorphous alumina vapor deposition temperature; Sa4, introducing trimethylaluminum gas and water vapor for a period of time to form a layer of alumina tube on the inner wall of the substrate; wherein the flow rate of trimethylaluminum gas is 0.5 to 1 cm 3 / min, water vapor flow rate is 1~2cm 3 / min, the hot wire catalyst for alumina vapor deposition is an alloy of 5-15% Ni, 10-30% Cr, and 60-80% Fe, the catalytic temperature for alumina vapor deposition is 600-800°C, and the temperature for amorphous alumina vapor deposition is 100-300°C.
[0113] In step S2 and step S4, the method for vapor deposition of amorphous silicon nitride tubes includes the following steps: Sb1, placing a substrate and a hot wire catalyst for silicon nitride vapor deposition in a deposition chamber; Sb2, sealing the deposition chamber and evacuating the chamber; Sb3, heating the hot wire catalyst for silicon nitride vapor deposition to a silicon nitride vapor deposition catalytic temperature, and heating the substrate to an amorphous silicon nitride vapor deposition temperature; Sb4, introducing silicon hydride gas, ammonia gas and hydrogen gas for a period of time to form a layer of silicon nitride tube on the inner wall of the substrate; wherein the flow rate of the silicon hydride gas is 5 to 8 cm 3 / min, ammonia flow rate is 6~12cm 3 / min, hydrogen flow rate is 20~30cm 3 / min, the hot wire catalyst for silicon nitride vapor deposition is a tungsten wire after surface carburization treatment, the catalytic temperature for silicon nitride vapor deposition is 1700-1950°C, and the temperature for amorphous silicon nitride vapor deposition is 40-300°C.
[0114] In this embodiment, in the step Sa1, the hot wire catalyst for aluminum oxide vapor deposition is disposed at the center line of the pipeline of the substrate; in the step Sb1, the hot wire catalyst for silicon nitride vapor deposition is disposed at the center line of the pipeline of the substrate.
[0115] In step Sa1, the inventors used a 5-15% Ni, 10-30% Cr, 60-80% Fe alloy as the hot wire catalyst for alumina vapor deposition; in step Sa3, the alumina vapor deposition catalytic temperature was controlled to be 800°C and the alumina vapor deposition catalytic temperature was controlled to be 100°C; in step Sa4, the trimethylaluminum (TMA) gas flow rate was controlled to be 1cm 3 / min, H2O steam flow rate is 2cm 3 / min, after passing trimethylaluminum gas and water vapor for a period of time, a layer of amorphous aluminum oxide tube with a thickness of 20nm to 80nm and a uniformity of ±5% can be attached to the surface of the substrate.
[0116] In step Sa1, the inventors used a 5-15% Ni, 10-30% Cr, 60-80% Fe alloy as the hot wire catalyst for alumina vapor deposition; in step Sa3, the alumina vapor deposition catalytic temperature was controlled to be 600°C, and the alumina vapor deposition catalytic temperature was controlled to be 300°C; in step Sa4, the trimethylaluminum (TMA) gas flow rate was controlled to be 0.5 cm 3 / min, H2O steam flow rate is 1cm 3 / min, after passing trimethylaluminum gas and water vapor for a period of time, a layer of amorphous aluminum oxide tube with a thickness of 20nm to 80nm and a uniformity of ±5% can be attached to the surface of the substrate.
[0117] In step Sb1, the hot wire catalyst for silicon nitride vapor deposition is a tungsten wire after surface carbonization treatment; in step Sb3, the catalytic temperature for silicon nitride vapor deposition is 1900°C, and the amorphous silicon nitride vapor deposition temperature is 40°C; in step Sb4, the flow rate of silicon hydride gas is controlled to 8cm 3 / min, ammonia flow rate is 12cm 3 / min, hydrogen flow rate is 30cm 3 / min, after introducing silicon hydride gas, ammonia gas and hydrogen gas for a period of time, a layer of amorphous silicon nitride tube with a thickness of 100nm and a uniformity of ±5% can be attached to the surface of the substrate.
[0118] In step Sb1, the hot wire catalyst for silicon nitride vapor deposition is a tungsten wire after surface carbonization treatment; in step Sb3, the catalytic temperature for silicon nitride vapor deposition is 1700°C, and the amorphous silicon nitride vapor deposition temperature is 40°C; in step Sb4, the flow rate of silicon hydride gas is controlled to 5cm 3 / min, ammonia flow rate is 6cm 3 / min, hydrogen flow rate is 20cm 3 / min, after introducing silicon hydride gas, ammonia gas and hydrogen gas for a period of time, a layer of amorphous silicon nitride tube with a thickness of 20nm and a uniformity of ±5% can be attached to the surface of the substrate.
[0119] In step Sb1, the hot wire catalyst for silicon nitride vapor deposition is a tungsten wire after surface carbonization treatment; in step Sb3, the catalytic temperature for silicon nitride vapor deposition is 1700°C, and the amorphous silicon nitride vapor deposition temperature is 300°C; in step Sb4, the flow rate of silicon hydride gas is controlled to 5cm 3 / min, ammonia flow rate is 6cm 3 / min, hydrogen flow rate is 20cm 3 / min, after introducing silicon hydride gas, ammonia gas and hydrogen gas for a period of time, a layer of amorphous silicon nitride tube with a thickness of 20nm to 100nm and a uniformity of ±5% can be attached to the surface of the substrate.
[0120] The inventors made a corrosion-resistant pipe sample 1 according to the method of Example 4: Fe-20nmAl2O3 / 100nmSi3N4 / 80nmAl2O3. The pipe substrate is made of metal Fe, and the specific processing technology is: in step S0, Fe is first soaked in dilute hydrochloric acid to remove surface oxides, then washed in deionized water, and finally dried. When making the first layer of corrosion-resistant pipes, the hot wire catalyst for alumina vapor deposition uses 5-15% Ni, 10-30% Cr, 60-80% Fe alloy, the alumina vapor deposition catalytic temperature is 600°C, the alumina vapor deposition catalytic temperature is 300°C, and the trimethylaluminum (TMA) gas flow rate is 0.5cm 3 / min, H2O steam flow rate is 1cm 3 / min, after passing trimethylaluminum gas and water vapor for a period of time, a layer of amorphous aluminum oxide tube with a thickness of 20nm and a uniformity of ±5% is attached to the surface of the substrate. When making the second layer of corrosion-resistant tube, the hot wire catalyst for silicon nitride vapor deposition is a tungsten wire with surface carbonization treatment, the silicon nitride vapor deposition catalytic temperature is 1700℃, the amorphous silicon nitride vapor deposition temperature is 300℃, and the silicon hydride gas flow rate is 5cm 3 / min, ammonia flow rate is 6cm 3 / min, hydrogen flow rate is 20cm 3 / min, after passing silicon hydride gas, ammonia and hydrogen for a period of time, a layer of amorphous silicon nitride tube with a thickness of 100nm and a uniformity of ±5% is attached to the surface of the substrate. When making the third layer of corrosion-resistant tube, the hot wire catalyst for alumina vapor deposition uses 5-15% Ni, 10-30% Cr, 60-80% Fe alloy, the alumina vapor deposition catalytic temperature is 600℃, the alumina vapor deposition catalytic temperature is 300℃, and the trimethylaluminum (TMA) gas flow rate is 0.5cm 3 / min, H2O steam flow rate is 1cm 3 / min, after passing trimethylaluminum gas and water vapor for a period of time, a layer of amorphous aluminum oxide tube with a thickness of 80nm and a uniformity of ±5% is attached to the surface of the substrate.
[0121] The inventors prepared corrosion-resistant pipe sample 2 according to the method of Example 7: Fe-20nmAl2O3 / 100nmSi3N4 / 80nmAl2O3 / 20nmSi3N4. The pipe substrate is made of metal Fe, and the specific processing technology is: in step S0, Fe is first soaked in dilute hydrochloric acid to remove surface oxides, then washed in deionized water, and finally dried. When making the first layer of corrosion-resistant pipe, the hot wire catalyst for alumina vapor deposition uses 5-15% Ni, 10-30% Cr, 60-80% Fe alloy, the alumina vapor deposition catalytic temperature is 600°C, the alumina vapor deposition catalytic temperature is 300°C, and the trimethylaluminum (TMA) gas flow rate is 0.5cm 3 / min, H2O steam flow rate is 1cm 3 / min, after passing trimethylaluminum gas and water vapor for a period of time, a layer of amorphous aluminum oxide tube with a thickness of 20nm and a uniformity of ±5% is attached to the surface of the substrate. When making the second layer of corrosion-resistant tube, the hot wire catalyst for silicon nitride vapor deposition is a tungsten wire with surface carbonization treatment, the silicon nitride vapor deposition catalytic temperature is 1700℃, the amorphous silicon nitride vapor deposition temperature is 300℃, and the silicon hydride gas flow rate is 5cm 3 / min, ammonia flow rate is 6cm 3 / min, hydrogen flow rate is 20cm 3 / min, after passing silicon hydride gas, ammonia and hydrogen for a period of time, a layer of amorphous silicon nitride tube with a thickness of 100nm and a uniformity of ±5% is attached to the surface of the substrate. When making the third layer of corrosion-resistant tube, the hot wire catalyst for alumina vapor deposition uses 5-15% Ni, 10-30% Cr, 60-80% Fe alloy, the alumina vapor deposition catalytic temperature is 600℃, the alumina vapor deposition catalytic temperature is 300℃, and the trimethylaluminum (TMA) gas flow rate is 0.5cm 3 / min, H2O steam flow rate is 1cm 3 / min, after passing trimethylaluminum gas and water vapor for a period of time, a layer of amorphous aluminum oxide tube with a thickness of 80nm and a uniformity of ±5% is attached to the surface of the substrate. When making the fourth layer of corrosion-resistant tube, the hot wire catalyst for silicon nitride vapor deposition is a tungsten wire with surface carbonization treatment, the silicon nitride vapor deposition catalytic temperature is 1700℃, the amorphous silicon nitride vapor deposition temperature is 300℃, and the silicon hydride gas flow rate is 5cm 3 / min, ammonia flow rate is 6cm 3 / min, hydrogen flow rate is 20cm 3 / min, after silicon hydride gas, ammonia gas and hydrogen gas were introduced for a period of time, a layer of amorphous silicon nitride tube with a thickness of 20nm and a uniformity of ±5% was attached to the surface of the substrate.
[0122] The inventors prepared corrosion-resistant pipe sample 3 according to the method of Example 4: Zn-20nmAl2O3 / 100nmSi3N4 / 80nmAl2O3. The pipe substrate is made of metal Zn, and the specific processing technology is: in step S0, Zn is first soaked in dilute hydrochloric acid to remove surface oxides, then washed in deionized water, and finally dried. When making the first layer of corrosion-resistant pipes, the hot wire catalyst for alumina vapor deposition uses 5-15% Ni, 10-30% Cr, 60-80% Fe alloy, the alumina vapor deposition catalytic temperature is 800°C, the alumina vapor deposition catalytic temperature is 100°C, and the trimethylaluminum (TMA) gas flow rate is 1cm 3 / min, H2O steam flow rate is 2cm 3 / min, after passing trimethylaluminum gas and water vapor for a period of time, a layer of amorphous aluminum oxide tube with a thickness of 20nm and a uniformity of ±5% is attached to the surface of the substrate. When making the second layer of corrosion-resistant tube, the hot wire catalyst for silicon nitride vapor deposition is a tungsten wire with surface carbonization treatment, the silicon nitride vapor deposition catalytic temperature is 1900℃, the amorphous silicon nitride vapor deposition temperature is 40℃, and the silicon hydride gas flow rate is 8cm 3 / min, ammonia flow rate is 12cm 3 / min, hydrogen flow rate is 30cm 3 / min, after passing silicon hydride gas, ammonia and hydrogen for a period of time, a layer of amorphous silicon nitride tube with a thickness of 100nm and a uniformity of ±5% is attached to the surface of the substrate. When making the third layer of corrosion-resistant tube, the hot wire catalyst for alumina vapor deposition uses 5-15% Ni, 10-30% Cr, 60-80% Fe alloy, the alumina vapor deposition catalytic temperature is 800℃, the alumina vapor deposition catalytic temperature is 100℃, and the trimethylaluminum (TMA) gas flow rate is 1cm 3 / min, H2O steam flow rate is 2cm 3 / min, after passing trimethylaluminum gas and water vapor for a period of time, a layer of amorphous aluminum oxide tube with a thickness of 80nm and a uniformity of ±5% is attached to the surface of the substrate.
[0123] The inventors prepared corrosion-resistant pipe sample 4 according to the method of Example 7: Zn-20nmAl2O3 / 100nmSi3N4 / 80nmAl2O3 / 20nmSi3N4. The pipe substrate is made of metal Zn, and the specific processing technology is: in step S0, Zn is first soaked in dilute hydrochloric acid to remove surface oxides, then washed in deionized water, and finally dried. When making the first layer of corrosion-resistant pipe, the hot wire catalyst for alumina vapor deposition uses 5-15% Ni, 10-30% Cr, 60-80% Fe alloy, the alumina vapor deposition catalytic temperature is 800°C, the alumina vapor deposition catalytic temperature is 100°C, and the trimethylaluminum (TMA) gas flow rate is 1cm3 / min, H2O steam flow rate is 2cm 3 / min, after passing trimethylaluminum gas and water vapor for a period of time, a layer of amorphous aluminum oxide tube with a thickness of 20nm and a uniformity of ±5% is attached to the surface of the substrate. When making the second layer of corrosion-resistant tube, the hot wire catalyst for silicon nitride vapor deposition is a tungsten wire with surface carbonization treatment, the silicon nitride vapor deposition catalytic temperature is 1900℃, the amorphous silicon nitride vapor deposition temperature is 40℃, and the silicon hydride gas flow rate is 8cm 3 / min, ammonia flow rate is 12cm 3 / min, hydrogen flow rate is 30cm 3 / min, after passing silicon hydride gas, ammonia and hydrogen for a period of time, a layer of amorphous silicon nitride tube with a thickness of 100nm and a uniformity of ±5% is attached to the surface of the substrate. When making the third layer of corrosion-resistant tube, the hot wire catalyst for alumina vapor deposition uses 5-15% Ni, 10-30% Cr, 60-80% Fe alloy, the alumina vapor deposition catalytic temperature is 800℃, the alumina vapor deposition catalytic temperature is 100℃, and the trimethylaluminum (TMA) gas flow rate is 1cm 3 / min, H2O steam flow rate is 2cm 3 / min, after passing trimethylaluminum gas and water vapor for a period of time, a layer of amorphous aluminum oxide tube with a thickness of 80nm and a uniformity of ±5% is attached to the surface of the substrate. When making the fourth layer of corrosion-resistant tube, the hot wire catalyst for silicon nitride vapor deposition is a tungsten wire with surface carbonization treatment, the silicon nitride vapor deposition catalytic temperature is 1700℃, the amorphous silicon nitride vapor deposition temperature is 40℃, and the silicon hydride gas flow rate is 5cm 3 / min, ammonia flow rate is 6cm 3 / min, hydrogen flow rate is 20cm 3 / min, after silicon hydride gas, ammonia gas and hydrogen gas were introduced for a period of time, a layer of amorphous silicon nitride tube with a thickness of 20nm and a uniformity of ±5% was attached to the surface of the substrate.
[0124] The present invention has been described in detail above with reference to the embodiments. It should be understood that it is impossible to describe all possible implementation methods in practice, and the inventive concept of the present invention is described as much as possible by way of example. Without departing from the inventive concept of the present invention and without creative work, the technical personnel in this technical field make selections and combinations of the technical features in the above embodiments, make experimental changes to the specific parameters, or use the prior art in this technical field to conventionally replace the technical means disclosed in the present invention to form specific embodiments, which should all belong to the implicit disclosure of the present invention.
Claims
1. A corrosion-resistant pipeline, comprising a pipeline matrix, wherein n is a natural number greater than 0, characterized in that: 2n+1 layers of corrosion-resistant tubes are tightly attached to the inner wall of the pipeline substrate in a nested manner, the odd-numbered layers of corrosion-resistant tubes are amorphous aluminum oxide tubes, and the even-numbered layers of corrosion-resistant tubes are amorphous silicon nitride tubes; or 2n+2 layers of corrosion-resistant tubes are tightly attached to the inner wall of the pipeline substrate in a nested manner, the odd-numbered layers of corrosion-resistant tubes are amorphous aluminum oxide tubes, and the even-numbered layers of corrosion-resistant tubes are amorphous silicon nitride tubes.
2. The corrosion-resistant pipeline according to claim 1, characterized in that: The amorphous aluminum oxide tube is manufactured by a vapor deposition method, and the amorphous silicon nitride tube is manufactured by a vapor deposition method.
3. The corrosion-resistant pipeline according to claim 1, characterized in that: The amorphous aluminum oxide tube is produced by adopting atomic layer vapor deposition technology or pulse plasma enhanced chemical vapor deposition technology.
4. A method for manufacturing a corrosion-resistant pipeline, characterized in that: The corrosion-resistant pipeline comprises a pipeline matrix and 2n+1 layers of corrosion-resistant pipes which are closely nested and connected, n is a natural number greater than 0, and the number pointer i=0, and comprises the following steps: S1. Vapor deposition and attachment of a layer of amorphous aluminum oxide tube on the inner wall of the pipeline substrate; S2, vapor deposition and attachment of a layer of amorphous silicon nitride tube on the inner wall of the amorphous aluminum oxide tube; S3, vapor deposition and attachment of a layer of amorphous aluminum oxide tube to the inner wall of the amorphous silicon nitride tube, let i=i+1; S4. If i=n, the corrosion-resistant pipeline is obtained; if i<n, the process returns to step S2 and executes a cycle from step S2 to step S4.
5. A method for manufacturing a corrosion-resistant pipeline, characterized in that: The corrosion-resistant pipeline comprises a pipeline matrix and 2n+2 layers of corrosion-resistant pipes which are closely nested and connected, n is a natural number greater than 0, and the number pointer i=0, and comprises the following steps: S1. Vapor deposition and attachment of a layer of amorphous aluminum oxide tube on the inner wall of the pipeline substrate; S2, vapor deposition and attachment of a layer of amorphous silicon nitride tube on the inner wall of the amorphous aluminum oxide tube; S3, vapor deposition and attachment of a layer of amorphous aluminum oxide tube to the inner wall of the amorphous silicon nitride tube, let i=i+1; S4. If i=n, a layer of amorphous silicon nitride tube is attached to the inner wall of the amorphous aluminum oxide tube by vapor deposition to obtain the corrosion-resistant pipeline; if i<n, return to step S2 to execute a cycle from step S2 to step S4.
6. The method for manufacturing a corrosion-resistant pipeline according to claim 4 or 5, characterized in that: The amorphous aluminum oxide tube is produced by adopting atomic layer vapor deposition technology or pulse plasma enhanced chemical vapor deposition technology.
7. The method for manufacturing a corrosion-resistant pipeline according to claim 4 or 5, characterized in that: The method for vapor deposition of amorphous alumina tubes comprises the following steps: Sa1, placing a substrate and a hot wire catalyst for alumina vapor deposition in a deposition chamber; Sa2, sealing the deposition chamber and evacuating the chamber; Sa3, heating the hot wire catalyst for alumina vapor deposition to a catalytic temperature for alumina vapor deposition, and heating the substrate to an amorphous alumina vapor deposition temperature; Sa4, introducing trimethylaluminum gas and water vapor for a period of time to form a layer of alumina tube on the inner wall of the substrate; wherein the flow rate of the trimethylaluminum gas is 0.5 to 1 cm 3 / min, water vapor flow rate is 1~2cm 3 / min, the hot wire catalyst for alumina vapor deposition is an alloy of 5-15% Ni, 10-30% Cr, and 60-80% Fe, the catalytic temperature for alumina vapor deposition is 600-800°C, and the temperature for amorphous alumina vapor deposition is 100-300°C.
8. The method for manufacturing a corrosion-resistant pipeline according to claim 7, characterized in that: In the step Sa1, the hot wire catalyst for aluminum oxide vapor deposition is disposed at the center line of the pipeline of the substrate.
9. The method for manufacturing a corrosion-resistant pipeline according to claim 4 or 5, characterized in that: The method for vapor deposition of amorphous silicon nitride tubes comprises the following steps: Sb1, placing a substrate and a hot wire catalyst for silicon nitride vapor deposition in a deposition chamber; Sb2, sealing the deposition chamber and evacuating the chamber; Sb3, heating the hot wire catalyst for silicon nitride vapor deposition to a silicon nitride vapor deposition catalytic temperature, and heating the substrate to an amorphous silicon nitride vapor deposition temperature; Sb4, introducing silicon hydride gas, ammonia gas and hydrogen gas for a period of time to form a layer of silicon nitride tube on the inner wall of the substrate; wherein the flow rate of the silicon hydride gas is 5 to 8 cm 3 / min, ammonia flow rate is 6~12cm 3 / min, hydrogen flow rate is 20~30cm 3 / min, the hot wire catalyst for silicon nitride vapor deposition is a tungsten wire after surface carburization treatment, the catalytic temperature for silicon nitride vapor deposition is 1700-1950°C, and the temperature for amorphous silicon nitride vapor deposition is 40-300°C.
10. The method for manufacturing a corrosion-resistant pipeline according to claim 9, characterized in that: In the step Sb1, the hot wire catalyst for silicon nitride vapor deposition is disposed at the center line of the pipeline of the substrate.