Three-body semiconductor process furnace

Abstract

The invention discloses a three-body semiconductor process furnace which comprises a fixed furnace body which is a part of furnace body which is horizontally arranged and has a central angle not smaller than 100 degrees and not larger than 200 degrees, and the fixed furnace body is symmetrical about the left and right middle sections passing through the axis of the furnace body; the fulcrum shaft is positioned right above the fixed furnace body; the upper edge of the left furnace body is pivoted on the fulcrum shaft, and the lower edge of the left furnace body is jointed with the left upper edge of the fixed furnace body; the upper edge of the right furnace body is pivoted on the fulcrum shaft, and the lower edge of the right furnace body is jointed with the right upper edge of the fixed furnace body; the right furnace body and the left furnace body are symmetrical about the left-right middle section, and are sequentially jointed and assembled with the fixed furnace body and the left furnace body to form a furnace body; and the holding assembly is used for holding the furnace body, so that the left furnace body and the right furnace body are jointed with the fixed furnace body. According to the three-body semiconductor process furnace, the furnace body can be opened more conveniently and flexibly, and the three-body semiconductor process furnace has better adaptability.

Description

Technical Field

[0001] The invention relates to a semiconductor process furnace. Background Art

[0002] Observation of the crystal growth process is very necessary. Therefore, in order to facilitate observation of the specific conditions of crystal growth, an observation window is often provided on the cover of the growth furnace. However, due to the location of the observation window, specifically, it is located at the end of the furnace body, and the observation angle of crystal growth is relatively limited, especially for some horizontal furnaces, whose axial length is relatively large. The distance between the observation window and the crystal position is often far, making it difficult to clearly observe the crystal growth conditions.

[0003] The main reason why the furnace cover can be equipped with an observation window is that the furnace cover can be equipped with a cooling device, and the melting point or softening point of most transparent materials is generally low. However, it should be noted that the melting point or softening point is not the working temperature, but is far away from the working temperature. Therefore, it is very difficult to set an observation window on the furnace body, and it can often only be used for heating furnaces with relatively low process temperatures. For example, the melting point of quartz glass is 1800℃, but its working temperature is 1100℃~1200℃, and the temperature of more semiconductor processes is generally higher than the working temperature of quartz glass. In view of this, even quartz glass with a relatively high working temperature is difficult to adapt to most semiconductor processes, and it is difficult to use it as a window material to set an observation window on the furnace body.

[0004] In view of this, there is a semiconductor growth furnace that can be opened from the side among the horizontal semiconductor process furnaces on the market. The main feature of the semiconductor process furnace is that a side door is provided on one side of the semiconductor process furnace to facilitate the placement and observation of the crystal. Compared with the semiconductor process furnaces that are opened from both ends, the semiconductor process furnaces with side doors are more suitable for applications that require frequent operation or observation of the crystal growth process.

[0005] In order to reduce leakage points, the furnace body of the current semiconductor process furnace with side opening generally includes two 180° halves, one of which is a fixed part and the other is an opening part. Relatively speaking, the volume of the half is relatively large, and its shielding area is relatively large. Therefore, when opening the side, the opening part often needs to be rotated 180 degrees to be fully opened, or a relatively large angle needs to be rotated to observe the situation inside the reaction chamber of the semiconductor process furnace.

[0006] The current semiconductor process furnace with side opening takes up a large space after the opening portion is opened, and has a large rotation angle. The required rotation power source has a complex structure and is inconvenient to install.

[0007] In addition, the inventors believe that the structure in which only one side of the semiconductor process furnace can be opened and closed has certain limitations; and when the furnace body is too long, the 180° rotation of the furnace body will cause deflection or poor straightness, affecting the overall airtightness of the furnace body. Summary of the invention

[0008] The object of the present invention is to provide a three-body semiconductor process furnace, which can open the furnace body more conveniently and flexibly and has better adaptability.

[0009] According to an embodiment of the present invention, a three-body semiconductor process furnace is provided, which is a horizontal process furnace, and its basic structure includes: The fixed furnace body is a part of the furnace body arranged horizontally with a central angle of not less than 100° and not more than 200°, and the fixed furnace body is symmetrical about the left and right middle sections passing through the furnace body axis; The support shaft is located directly above the fixed furnace body; The left furnace body has an upper edge pivotally mounted on the support shaft and a lower edge for engaging with the left upper edge of the fixed furnace body; The right furnace body has an upper edge pivotally mounted on the support shaft, and a lower edge used to engage with the upper right edge of the fixed furnace body; the right furnace body is symmetrical with the left furnace body about the left and right middle cross-sections, and is sequentially engaged with the fixed furnace body and the left furnace body to form a furnace body; The clamping assembly is used to clamp the furnace body so that the left furnace body and the right furnace body are connected to the fixed furnace body.

[0010] Optionally, the central angle of the left furnace body is 90° or 120°.

[0011] Optionally, the joint surfaces between the left furnace body, the right furnace body and the fixed furnace body are labyrinth joint surfaces.

[0012] Optionally, the labyrinth joint surface is constructed as follows: In the first configuration, the labyrinth joint surface includes an inner flat joint surface extending from the inner surface of the furnace body to the middle of the furnace body in the inner-outer direction, an outer flat joint surface extending from the middle of the furnace body to the outer surface of the furnace body in the inner-outer direction, and a circumferentially extending surface connecting adjacent ends of the inner flat joint surface and the outer flat joint surface; accordingly, the inner flat joint surface and the outer flat joint surface are staggered with each other in the circumferential direction; or The second structure, the labyrinth joint surface includes an inner arc joint surface extending outward from the inner surface of the furnace body to the middle of the furnace body in the inner and outer directions, an outer arc joint surface extending from the middle of the furnace body to the outer surface of the furnace body in the inner and outer directions, and a circumferential extension surface connecting the inner arc joint surface and the outer arc joint surface; accordingly, the axis of the inner arc joint surface and the outer arc joint surface is the axis of the support shaft, and the inner radius of the inner arc joint surface is not equal to the outer radius of the outer arc joint surface.

[0013] Optionally, the outer radius is larger than the inner radius, and the radius difference is one third to one half of the furnace wall thickness.

[0014] Optionally, the clamping assembly is a buckle, and the number of buckles adapted to the left furnace body and the number of buckles adapted to the right furnace body are no less than three.

[0015] Optionally, the seal between the left furnace body and the right furnace body is a joint seal on the radial surface of the furnace body or an upper labyrinth seal structure seal.

[0016] Optionally, at least two ends of the support shaft are supported on a given frame; The support shaft is a fixed shaft; Correspondingly, the upper side of the left furnace body is equipped with at least a pair of left shaft sleeves, and the right furnace body is equipped with at least a pair of right shaft sleeves. The left furnace body is rotatably mounted on the support shaft through the left shaft sleeves, and the right furnace body is rotatably mounted on the support shaft through the right shaft body.

[0017] Optionally, the left bushing and the right bushing are alternately arranged on the support shaft.

[0018] Optionally, a support platform is provided on the top of the left furnace body and the top of the right furnace body to respectively limit the position of the right furnace body and the left furnace body after they are opened into place.

[0019] The three-body semiconductor process furnace according to the embodiment of the present invention has three parts, namely, a fixed furnace body, a left furnace body and a right furnace body, which are assembled into a furnace body based on circumferential joints. Among them, the fixed furnace body is located on the lower side, and the left and right furnace bodies are located on the upper side. Above the fixed furnace body, specifically on the upper side of the furnace body, a support shaft is provided. Based on the horizontal furnace body, the upper edges of the left and right furnace bodies are pivotally mounted on the support shaft, and have the freedom of swinging. Obviously, one end point of the angular range corresponding to the swinging freedom must be the position of the corresponding furnace body corresponding to the furnace body assembly state, and the other end point is the static position after the left furnace body or the right furnace body is turned up. Since the furnace body part that can be opened is divided into two parts, the single furnace body part that can be opened is relatively small, so that it occupies less space after opening and is easier to operate. Since the furnace body can be opened from the left or the right, it has relatively good flexibility, and can be more conveniently observed from the left or the right side according to the needs of observation, such as the growth state of the crystal. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 It is a schematic diagram of the main structure of the three-body semiconductor process furnace in the first embodiment.

[0021] Figure 2 It is a schematic diagram of the main structure of the three-body semiconductor process furnace in the second embodiment.

[0022] Figure 3 It is a left-side structural schematic diagram of the three-body semiconductor process furnace in the first embodiment.

[0023] Figure 4It is a schematic diagram of the left view of the structure of the three-body semiconductor process furnace in the second embodiment.

[0024] In the figure: 1. fixed furnace body, 2. furnace cavity, 3. buckle, 4. labyrinth joint, 5. left movable furnace body, 6. support platform, 7. support shaft, 8. direct seam, 9. right movable furnace body, 10. shaft seat, 11. left shaft sleeve assembly, 12. shaft sleeve assembly. DETAILED DESCRIPTION

[0025] The three-body semiconductor process furnace according to the embodiment of the present invention is firstly a horizontal process furnace, wherein at least the furnace chamber 2 of the horizontal process furnace is a cylindrical cavity, and has a certain circumferential, radial and axial directions. For the convenience of explanation, the left and right mid-sections passing through the axis of the furnace chamber 2 are taken as reference planes, and the left and right directions are determined, i.e. Figure 1 The left movable furnace body 5 and the right movable furnace body 9 shown in the figure correspond to the positions of the locator words. Therefore, correspondingly, Figure 1 and Figure 2 The axial direction of the three-body semiconductor process furnace shown in is the front-to-back direction, and the ... Figure 1 is the main view.

[0026] In the embodiments of the present invention, emphasis is placed on the fact that the furnace body can be opened from the left side or the right side, while other parts are not involved. Therefore, in the embodiments of the present invention, parts irrelevant to the implementation of the present invention will not be described again.

[0027] Regarding the fixed furnace body 1, it is fixedly arranged, more precisely, the fixed furnace body 1 is fixedly arranged relative to the movable left furnace body 5 and the right movable furnace body 9. For the convenience of description, the left movable furnace body 5 is referred to as the left furnace body, and the right movable furnace body 9 is referred to as the right furnace body. The fixed furnace body 1 serves as a bearing part of the fixed part and other furnace body parts, and constitutes the bottom or base of the furnace body.

[0028] As mentioned above, the furnace cavity 2 is a cylindrical cavity, and the corresponding fixed furnace body 1 is a groove-shaped structure as a whole, with the groove opening facing upward, and the groove is obviously an arc groove. In addition, the fixed furnace body 1 is a left-right symmetrical structure, and correspondingly, the fixed furnace body 1 is symmetrical about the left-right symmetrical plane passing through the furnace body axis.

[0029] Since the furnace chamber 2 is a cylindrical cavity, in order to clearly describe the size of each furnace body part, the central angle is used for description, and those skilled in the art should have a clear understanding of this. Accordingly, the central angle of the fixed furnace body 1 is not less than 100° and not more than 200°.

[0030] Figure 1 In the figure, the central angle of the fixed furnace body 1 is 180°. Figure 2The central angle of the fixed furnace body 1 is 120°, which constitutes the lower part of the horizontal furnace body. The corresponding wall part of the furnace body 1 is used to support the two movable furnace bodies when the furnace is in the closed state.

[0031] Regarding the installation method of the movable furnace body, a method suitable for sealing is adopted, and in the embodiment of the present invention, a swinging method is adopted to open or close the movable furnace body.

[0032] Accordingly, in Figures 1 to 4 The illustrated structure is equipped with a support shaft 7, which is Figure 3 and Figure 4 The structure shown is installed above the furnace body in a manner of being supported at both ends and is located directly above the fixed furnace body 1 .

[0033] Since pivoting does not require the formation of a revolving pair in all the shaft segments along the entire length of the support shaft 7, the support shaft 7 has more shaft segments that can be used as support segments in addition to the pivoting portion. Therefore, in addition to the aforementioned supports at both ends of the support shaft 7, additional supports can be provided on the shaft segments other than the portions that are not used to construct the revolving pair.

[0034] In some embodiments, a longitudinal beam may be further disposed above the support shaft 7 to provide auxiliary support to the support shaft 7 .

[0035] In addition, considering the position interference when opening, it is preferable to support the support shaft 7 at both ends.

[0036] In addition, since the installation space of the support shaft 7 is relatively abundant, the diameter restriction is relatively small. A relatively large diameter tubular shaft can be used to construct the support shaft 7 to obtain a relatively high shear section coefficient, thereby making the support shaft 7 have a relatively large stiffness.

[0037] Correspondingly, the upper edge of the left furnace body is pivotally mounted on the support shaft 7, and the lower edge of the left furnace body is used to engage with the left upper edge of the fixed furnace body 1 when the furnace is in the closed state. Based on the above content, it can be known that when the furnace is in the closed state, the left furnace body is at the first dead point position. When it is necessary to observe, for example, the crystal growth state from the left side, the left furnace body can be opened with the axis of the support shaft 7 as the rotation axis.

[0038] Correspondingly, the upper edge of the right furnace body is pivotally mounted on the support shaft 7, and the lower edge of the right furnace body is engaged with the right upper edge of the fixed furnace body when the furnace is in the closed state.

[0039] The right furnace body is symmetrical with the left furnace body about the left and right middle cross-sections, and is sequentially joined with the fixed furnace body and the left furnace body to form a furnace body. Figure 1 In the state shown, the central angle of the fixed furnace body 1 is 180°, the central angles of the left movable furnace body 4 and the right movable furnace body 9 are both 90°, and the radius is the same. In the furnace closing state, a right cylindrical furnace cavity 2 is assembled, and the 90° left movable furnace body 4 and the 90° right movable furnace body 9 are in the Figure 1 The 180° fixed furnace body 1 is arranged horizontally and is relatively symmetrical in the left-right direction.

[0040] Similarly, for Figure 2 The horizontally arranged 120° fixed furnace body 1, the 120° left movable furnace body 5 and the 120° right movable furnace body 9 shown in the figure are the same as above.

[0041] The furnace body generally includes, for example, a metal shell and a furnace lining fixed to the inner surface of the shell. The furnace lining is generally made of, for example, ceramic fiber insulation material, fiber module, composite furnace lining structure, etc., with a relatively large thickness and a relatively large overall weight. Therefore, the movable furnace body can generate a certain bonding force with the fixed furnace body 1 based on its own gravity, thereby maintaining a certain sealing ability of, for example, the direct seam 8 and the labyrinth seam 4, but it is slightly insufficient. Therefore, under the condition that the movable furnace body is configured, a clamping component is configured to clamp the furnace body when the furnace body is in the closed state, so that the left furnace body and the right furnace body are fully bonded with the fixed furnace body 1, that is, through the positive pressure of the additional matching interface, a relatively good seal is formed between the movable furnace body and the fixed furnace body 1.

[0042] Taking into account the support and suitability for observation, the left furnace body and the right furnace body, which are symmetrically arranged with each other, are limited by the central angle and taking the left furnace body as an example, the central angle of the left furnace body is not less than 80°. Although the relatively small left furnace body is conducive to the flexibility of opening, the observation range is limited.

[0043] At the same time, the central angle of the left furnace body should not be greater than 130°. Although an overly large left furnace body can more comprehensively display the furnace body situation, it is not very necessary, especially since the position of the crystal is usually higher than the center position in the height direction of the furnace body, although in some implementations, the crystal is located below the center of the height direction of the furnace body. Therefore, an overly large movable furnace body has the same waste problem as the known 180° movable furnace body, and its operability is also relatively poor.

[0044] Figure 1 The three-body semiconductor process furnace shown is a special structure, in which the central angle of the fixed furnace body 1 is 180°, and the left movable furnace body 5 and the right movable furnace body 9 are both 90°. At this time, the fixed furnace body 1 can provide a horizontal supporting surface, which is conducive to processing. At the same time, the supporting surface is a horizontal surface, which is conducive to load-bearing design.

[0045] and Figure 2 In the structure shown, the central angle of the fixed furnace body 1 is 120°, and the central angles of the two movable furnace bodies are both 120°. The matching surface between the fixed furnace body 1 and the movable furnace body is an inclined surface, and the tightness of the combination is easy to ensure.

[0046] As two special angles, when the movable furnace body adopts 90° and 120°, it is easy to design and process.

[0047] Regarding sealing, on the one hand, by means of the aforementioned clamping assembly, the joint force between the movable furnace body and the fixed furnace body 1 in the furnace closing state is relatively large, that is, a relatively good sealing ability is obtained by increasing the positive pressure of the joint surface. In some embodiments, the sealing ability is improved by making the profile of the joint surface complicated and expanding the area of ​​the joint surface.

[0048] As a special implementation of the complexity of the joint surface, a labyrinth joint surface is constructed to produce several elbow effect points, thereby further improving the sealing ability of the joint surface as a whole, such as Figure 1 and Figure 2 The labyrinth seam 4 shown in FIG.

[0049] The labyrinth joint 4 is constructed by a labyrinth joint surface, which necessarily includes a labyrinth joint surface on the movable furnace body side and a labyrinth joint surface on the fixed furnace body side. Based on the matching relationship, the labyrinth joint surfaces on both sides should be the same or substantially the same.

[0050] exist Figure 1 and Figure 2 In the illustrated structure, each surface unit of the sealing joint surface is a plane unit, and the processing difficulty of this sealing joint surface is relatively low. In some embodiments, considering the swinging characteristics of the movable furnace body, the corresponding surface unit can be an arc surface unit.

[0051] It should be noted that although the arc surface unit seems to have a better bonding tightness, it has been verified that, on the contrary, the bonding tightness of the plane unit is better, because the arc surface often has a certain center of the circle, and the corresponding arc surface on the fixed furnace body 1 and the corresponding arc surface on the movable furnace body are the same at all times when the furnace is closed. Considering the motion interference, the same distance at all times determines that the corresponding arc surfaces need to be left with a corresponding distance, otherwise it may cause difficulty in closing the furnace. For the plane unit's bonding surface, it is easier to obtain a bonding rather than a "distance" matching mode, so it is easier to obtain a sealing interface with better airtightness. Therefore, in a preferred embodiment, the sealing bonding surface of the labyrinth joint 4 is preferably constructed using a plane unit structure.

[0052] Correspondingly, the construction method of constructing the labyrinth joint 4 with plane units is called the first construction. In the first construction, the labyrinth joint surface includes an inner plane joint surface extending from the inner surface of the furnace body to the middle of the furnace body in the inner and outer directions, an outer plane joint surface extending from the middle of the furnace body to the outer surface of the furnace body in the inner and outer directions, and a circumferential extension surface connecting the adjacent ends of the inner plane joint surface and the outer plane joint surface; accordingly, the inner plane joint surface and the outer plane joint surface are staggered with each other in the circumferential direction to form the following: Figure 1 and Figure 2The sealing seam 4 shown in the figure. The labyrinth seam shown in the figure has two 90° elbows and is adapted to the above description of the plane unit. The plane unit itself is more likely to form a relatively tight joint, so that the sealing performance of the labyrinth seam 4 formed by the first structure is better.

[0053] The sealing joint 4 constructed with arc surface units is called the second structure. In the second structure, the labyrinth joint surface includes an inner arc joint surface extending from the inner surface of the furnace body to the middle of the furnace body in the inner and outer directions and an outer arc joint surface extending from the middle of the furnace body to the outer surface of the furnace body in the inner and outer directions, and a circumferential extension surface connecting the inner arc joint surface and the outer arc joint surface; accordingly, the axis of the inner arc joint surface and the outer arc joint surface is the axis of the support shaft, and the inner radius of the inner arc joint surface is not equal to the outer radius of the outer arc joint surface, thereby forming a joint surface step.

[0054] Figure 1 and Figure 2 The labyrinth seams 4 shown in the figure are all two-step labyrinth seams, and their construction is relatively simple. In some implementations, they can also be configured as multi-step sealing seams to obtain better sealing ability. However, considering factors such as construction difficulty, the two-step sealing seams are still preferred.

[0055] Furthermore, in the second structure, the outer radius is larger than the inner radius, and the radius difference is one third to one half of the furnace wall thickness.

[0056] exist Figures 1 to 4 In the structure shown, the clamping assembly is a buckle 3, and the number of buckles adapted to the left furnace body and the number of buckles adapted to the right furnace body are not less than three. Figure 3 and Figure 4 The illustrated structures all use three buckles. The buckle is a buckle with a simple structure and relatively fast buckling, and it generates a pulling force when buckled to form a holding force.

[0057] There are many types of buckles 3, such as universal buckles, heavy buckles, long buckles, spring buckles, heterosexual buckles, hook buckles, etc. Those skilled in the art can choose according to needs, which will not be described here.

[0058] exist Figure 1 and Figure 2 In the illustrated structure, the seal between the left furnace body and the right furnace body is a joint seal of the radial surface of the furnace body. In some embodiments, the seal formed between the upper parts of the left furnace body and the right furnace body can also adopt a labyrinth seal structure, which is distinguished by an upper labyrinth seal structure.

[0059] exist Figure 3 and Figure 4 In the illustrated structure, at least two ends of the support shaft 7 are supported on a given frame, such as Figure 3The shaft seat 10 and the support shaft 7 adopt a fixed shaft for the purpose of avoiding movement interference. The left furnace body and the right furnace body are opened separately in most applications.

[0060] Correspondingly, the upper side of the left furnace body is equipped with at least a pair of left shaft sleeves 11, and the right furnace body is equipped with at least a pair of right shaft sleeves 12. The left furnace body is rotatably mounted on the support shaft 7 through the left shaft sleeves 11, and the right furnace body is rotatably mounted on the support shaft 7 through the right shaft body 12.

[0061] exist Figure 3 and Figure 4 In the illustrated structure, the left shaft sleeve 11 and the right shaft sleeve 12 are alternately arranged on the support shaft 7 so that the suspension points of the support shaft 7 for the two movable furnace bodies are relatively balanced.

[0062] in addition, Figure 1 and Figure 2 In the figure, a support platform 6 is provided at the top of the left movable furnace body 5 and the top of the right movable furnace body 9, so as to limit and support the right movable furnace body 9 and the left movable furnace body 5 after they are opened in place.

Claims

1. A three-body semiconductor process furnace, which is a horizontal process furnace, characterized in that: include: The fixed furnace body is a part of the furnace body arranged horizontally with a central angle of not less than 100° and not more than 200°, and the fixed furnace body is symmetrical about the left and right middle sections passing through the furnace body axis; The support shaft is located directly above the fixed furnace body; The left furnace body has an upper edge pivotally mounted on the support shaft and a lower edge for engaging with the left upper edge of the fixed furnace body; The right furnace body has an upper edge pivotally mounted on the support shaft, and a lower edge used to engage with the upper right edge of the fixed furnace body; the right furnace body is symmetrical with the left furnace body about the left and right middle cross-sections, and is sequentially engaged with the fixed furnace body and the left furnace body to form a furnace body; The clamping assembly is used to clamp the furnace body so that the left furnace body and the right furnace body are connected to the fixed furnace body.

2. The three-body semiconductor process furnace according to claim 1, characterized in that: The center angle of the left furnace body is 90° or 120°.

3. The three-body semiconductor process furnace according to claim 1, characterized in that: The joint surfaces between the left furnace body, the right furnace body and the fixed furnace body are labyrinth joint surfaces.

4. The three-body semiconductor process furnace according to claim 3, characterized in that: The labyrinth joint surface is constructed as follows: In the first configuration, the labyrinth joint surface includes an inner flat joint surface extending from the inner surface of the furnace body to the middle of the furnace body in the inner and outer directions, an outer flat joint surface extending from the middle of the furnace body to the outer surface of the furnace body in the inner and outer directions, and a circumferentially extending surface connecting adjacent ends of the inner flat joint surface and the outer flat joint surface; accordingly, the inner flat joint surface and the outer flat joint surface are staggered with each other in the circumferential direction; or The second structure, the labyrinth joint surface includes an inner arc joint surface extending outward from the inner surface of the furnace body to the middle of the furnace body in the inner and outer directions, an outer arc joint surface extending from the middle of the furnace body to the outer surface of the furnace body in the inner and outer directions, and a circumferential extension surface connecting the inner arc joint surface and the outer arc joint surface; accordingly, the axis of the inner arc joint surface and the outer arc joint surface is the axis of the support shaft, and the inner radius of the inner arc joint surface is not equal to the outer radius of the outer arc joint surface.

5. The three-body semiconductor process furnace according to claim 4, characterized in that: The outer radius is larger than the inner radius, and the radius difference is one third to one half of the furnace wall thickness.

6. The three-body semiconductor process furnace according to claim 1, characterized in that: The clamping assembly is a buckle, and the number of the buckles adapted to the left furnace body and the number of the buckles adapted to the right furnace body are no less than three.

7. The three-body semiconductor process furnace according to claim 1, characterized in that: The seal between the left furnace body and the right furnace body is a joint seal on the radial surface of the furnace body or an upper labyrinth seal structure seal.

8. The three-body semiconductor process furnace according to claim 1, characterized in that: At least two ends of the support shaft are supported on a given frame; The support shaft is a fixed shaft; Correspondingly, the upper side of the left furnace body is equipped with at least a pair of left shaft sleeves, and the right furnace body is equipped with at least a pair of right shaft sleeves. The left furnace body is rotatably mounted on the support shaft through the left shaft sleeves, and the right furnace body is rotatably mounted on the support shaft through the right shaft body.

9. The three-body semiconductor process furnace according to claim 8, characterized in that: The left shaft sleeve and the right shaft sleeve are alternately arranged on the support shaft.

10. The three-body semiconductor process furnace according to claim 1, characterized in that: A supporting platform is provided on the top of the left furnace body and the top of the right furnace body, which is used for limiting the position of the right furnace body and the left furnace body after they are opened in place.

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