Electrical detection method

Abstract

The invention relates to an electrical property detection method, which provides a wiring structure which comprises a base material body and a plurality of contact parts combined with the base material body, the contact part comprises an electrical detection pad exposed out of the surface of the base material body, an electrical auxiliary pad exposed out of the surface of the base material body, and a conductor electrically connected with the electrical detection pad and the electrical auxiliary pad, so that when a probe of a detection device is butted with the contact part, the electrical detection pad is electrically connected with the electrical auxiliary pad; the single probe can simultaneously apply acting force to the electrical detection pad and the electrical auxiliary pad of the single contact part, so that the contact acting force between the probe and the contact part is enhanced, and electrical testing is facilitated.

Description

Technical Field

[0001] The present invention relates to a testing method, and more particularly to an electrical testing method suitable for electronic devices. Background Art

[0002] In order to ensure the continued miniaturization and multi-functionality of electronic products and communication equipment, semiconductor packaging needs to be miniaturized to facilitate multi-pin connection. To this end, the industry has developed many advanced process packaging technologies. With the advancement of technological development, in response to the changes in electronic products, the industry has developed various types of test probe cards for testing electronic devices such as semiconductor chips or packaging modules.

[0003] The manufacturing method of traditional probe cards is very limited in probe size and has high production costs, so many bottlenecks need to be overcome in the process of making probes. Currently, the size trend of semiconductor chips tends to be miniaturized and the output contacts of semiconductor chips are increasing. The test probe structure is made up of tiny probes. Therefore, it is necessary to continuously improve and overcome the manufacturing technology of the probe structure to match the miniaturized semiconductor chips and overcome the problems of traditional probe structures that are prone to fatigue during operation and limited probe size, so as to meet the trend of modern technology products.

[0004] Figure 1 FIG. 1 is a cross-sectional schematic diagram of an existing electrical property detection method. Figure 1 As shown, a substrate structure 1 is first provided, on which a substrate body 10 has a plurality of electrical contact pads 12 of micro pad (commonly known as μ-pad) specifications, and each of the electrical contact pads 12 is formed with a conductive bump 19a to form a contact 19, and then a plurality of probes 70 of a detection device 7 are connected to the plurality of conductive bumps 19a to perform electrical detection operations.

[0005] However, in the conventional electrical testing method, the probe 70 only contacts a single contact point 19 , resulting in insufficient contact force between the probe 70 and the contact point 19 , making it impossible to perform electrical testing.

[0006] Furthermore, when a single contact 19 fails, the entire substrate structure 1 or even the entire semiconductor package or electronic product often needs to be scrapped, resulting in a large waste of material costs, making it difficult to reduce the cost of the semiconductor package or electronic product.

[0007] Therefore, how to overcome the various problems of the above-mentioned prior art has become a topic that needs to be solved urgently. Summary of the invention

[0008] In view of the various deficiencies of the above-mentioned prior art, the present invention provides an electrical detection method, including: providing a wiring structure, which includes a substrate body and a plurality of contact parts connected to the substrate body, wherein each of the contact parts includes an electrical detection pad exposed on the surface of the substrate body, an electrical auxiliary pad exposed on the surface of the substrate body, and a conductor electrically connecting the electrical detection pad and the electrical auxiliary pad; and docking a probe of a detection device with the contact part so that a single probe simultaneously applies a force to the electrical detection pad and the electrical auxiliary pad of a single contact part.

[0009] In the aforementioned electrical detection method, the substrate body has a plurality of electrical contact pads on its surface. For example, the electrical contact pads have conductive bumps formed thereon.

[0010] In the aforementioned electrical property detection method, the conductor is a conductive trace exposed on the surface of the substrate body.

[0011] In the aforementioned electrical property detection method, the conductor is a conductive trace embedded in the substrate body.

[0012] In the aforementioned electrical property detection method, at least two of the plurality of contact portions are electrically connected to each other through a wiring layer, and the wiring layer is combined with the substrate body.

[0013] In the aforementioned electrical detection method, the contact portion includes a plurality of the electrical auxiliary pads, so that the conductor electrically connects the electrical detection pad and the plurality of the electrical auxiliary pads.

[0014] In the aforementioned electrical detection method, conductive bumps are formed on the electrical test pad and the electrical auxiliary pad so that the probe can contact the conductive bumps.

[0015] In the aforementioned electrical property detection method, the width of the probe is at least 55 microns.

[0016] In the aforementioned electrical property detection method, the distance between two adjacent probes of the detection device is at least 80 micrometers.

[0017] As can be seen from the above, in the electrical detection method of the present invention, the contact portion mainly includes an electrical detection pad and an electrical auxiliary pad, so that the detection device needs to widen the width of the probe to simultaneously apply a force to the electrical detection pad and the electrical auxiliary pad. Therefore, compared with the prior art, the probe in the electrical detection method of the present invention needs to apply a force to the electrical detection pad and the electrical auxiliary pad, so that the contact force between the probe and the contact portion is enhanced, which is beneficial to electrical testing.

[0018] Furthermore, through the design of the electrical auxiliary pad, when the electrical detection pad fails, the probe of the detection device can still electrically connect the contact part, so there is no need to scrap the entire wiring structure to avoid a large amount of waste of material costs. Therefore, compared with the prior art, the electrical detection method of the present invention can effectively reduce the cost of semiconductor packages or electronic products. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 It is a cross-sectional schematic diagram of an existing electrical property detection method.

[0020] Figure 2A A schematic top view of a first embodiment of a wiring structure used in an electrical property detection method of the present invention.

[0021] Figure 2A-1 FIG. 4 is a cross-sectional schematic diagram of a first embodiment of an electrical property detection method of the present invention.

[0022] Figure 2B for Figure 2A A cross-sectional schematic diagram of another embodiment of the present invention.

[0023] Figure 2B-1 for Figure 2A-1 A cross-sectional schematic diagram of another embodiment of the present invention.

[0024] Figure 2C for Figure 2A-1 Schematic cross-sectional view of other embodiments.

[0025] Figure 3A FIG. 4 is a cross-sectional schematic diagram of a second embodiment of the electrical property detection method of the present invention.

[0026] Figure 3B for Figure 3A A cross-sectional schematic diagram of another embodiment of the present invention.

[0027] FIG. 4A to FIG. 4E The figure is a cross-sectional schematic diagram of the electrical property detection method of the present invention applied to the manufacturing process of an electronic package.

[0028] Main component symbols

[0029] 1 Substrate structure

[0030] 10 substrate body

[0031] 12,202 Electrical contact pads

[0032] 19 contacts

[0033] 19a,211,222,29a Conductive bumps

[0034] 2a, 2b, 2c, 3a, 3c Wiring structure

[0035] 20 Base material body

[0036] 200 Insulation

[0037] 201 Wiring Layer

[0038] 21 Electronic Subject

[0039] 22 Line Department

[0040] 23 Conductive column

[0041] 24 Load-bearing structure

[0042] 240 Dielectric layer

[0043] 241 Line Layer

[0044] 25 Coating

[0045] 26 Electronic components

[0046] 262 Primer

[0047] 27 Conductive element

[0048] 28 Encapsulation layer

[0049] 29,39 Contact part

[0050] 29b Under Bump Metal

[0051] 290,293 Conductors

[0052] 291 Electrical test pad

[0053] 292,392 Electrical auxiliary pads

[0054] 4 Electronic packaging

[0055] 4a Electronic structure

[0056] 6,7 Detection device

[0057] 60,61,62,63,70 Probes

[0058] 9 Bearing

[0059] 90 Release layer

[0060] 91 Metal Layer

[0061] D Distance

[0062] R Width

[0063] L Cutting path. DETAILED DESCRIPTION

[0064] The following describes the implementation of the present invention through specific embodiments. Those skilled in the art can easily understand other advantages and technical effects of the present invention from the contents disclosed in this specification.

[0065] It should be noted that the structures, proportions, sizes, etc. illustrated in the drawings attached to this specification are only used to match the contents disclosed in the specification for the understanding and reading of those skilled in the art, and are not used to limit the limiting conditions for the implementation of the present invention, so they have no substantial technical significance. Any structural modification, change in proportional relationship, or adjustment of size, without affecting the technical effects and objectives that can be achieved by the present invention, should still fall within the scope of the technical contents disclosed by the present invention. At the same time, the terms such as "on", "one", etc. cited in this specification are only for the convenience of description, and are not used to limit the scope of the implementation of the present invention. The change or adjustment of their relative relationship, without substantially changing the technical contents, should also be regarded as the scope of the implementation of the present invention.

[0066] Figure 2A FIG. 2 is a top view of a first embodiment of a wiring structure 2a used in the electrical property detection method of the present invention. Figure 2A As shown, the wiring structure 2a includes a substrate body 20 and a plurality of contact portions 29 combined with the substrate body 20, wherein the contact portion 29 includes an electrical detection pad 291 exposed on the surface of the substrate body 20, an electrical auxiliary pad 292 exposed on the surface of the substrate body 20, and a conductor 290 electrically connecting the electrical detection pad 291 and the electrical auxiliary pad 292.

[0067] The substrate body 20 is an insulating material, such as dielectric materials such as polybenzoxazole (PBO), polyimide (PI), prepreg (PP), etc., or solder resist materials such as green paint, ink, etc. Alternatively, the substrate body 20 can also be a semiconductor material, such as silicon or glass, without special restrictions.

[0068] In this embodiment, a plurality of electrical contact pads 202, such as micro pads (commonly known as μ-pads) of copper material, may be disposed on the surface of the substrate body 20, and a wiring layer 201 may be disposed inside the substrate body 20, such as Figure 2A-1 For example, a redistribution layer (RDL) process may be used to manufacture the wiring layer 201 and the electrical contact pad 202 .

[0069] The contact portion 29 (including the electrical detection pad 291, the electrical auxiliary pad 292 and the conductor 290) is made of copper material and is disposed on the surface of the substrate body 20. Any two contact portions 29 can be electrically connected to each other through the wiring layer 201 or other electronic components.

[0070] In this embodiment, the contact portion 29 is manufactured by using an RDL process. For example, the contact portion 29 and the electrical contact pad 202 are manufactured together by using the same RDL process.

[0071] Furthermore, the conductor 290 is a conductive trace exposed on the surface of the substrate body 20, which is electrically connected to the wiring layer 201. Figure 2B and Figure 2B-1 In the wiring structure 2b shown, the conductor 293 can also be a conductive trace embedded in the substrate body 20, which can be manufactured together with the wiring layer 201 using an RDL process, wherein the substrate body 20 includes a plurality of insulating layers 200 to facilitate the manufacture of the conductor 293 and the wiring layer 201.

[0072] In addition, the electrical detection pad 291, the electrical auxiliary pad 292 and the electrical contact pad 202 can be connected to other components through the conductive bump 29a such as a metal bump or a solder bump, such as Figure 2A-1 For example, an under bump metallization (UBM) 29b may be formed on the electrical detection pad 291, the electrical auxiliary pad 292 and the electrical contact pad 202. Figure 2B As shown, it is convenient to combine the conductive bump 29a.

[0073] like Figure 2A-1 or Figure 2B-1 As shown, when performing electrical testing operations, multiple probes 60 of the testing device 6 can be docked with two sets of contact portions 29 that are electrically connected to each other, so that a single probe 60 is aligned with two conductive bumps 29a on a single contact portion 29 (including an electrical testing pad 291 and an electrical auxiliary pad 292), that is, a single probe 60 contacts the two conductive bumps 29a at the same time to apply force to the electrical testing pad 291 and the electrical auxiliary pad 292 to perform a random electrical testing operation.

[0074] In this embodiment, the width R of each probe 60 of the detection device 6 is at least 55 micrometers (um), and the distance D between two adjacent probes 60 is at least 80 micrometers.

[0075] Therefore, the electrical detection method of the present invention mainly uses the design of the electrical auxiliary pad 292 to make one contact portion 29 include two pads (the electrical detection pad 291 and the electrical auxiliary pad 292), thereby helping to apply force to the electrical detection pad 291 and the electrical auxiliary pad 292, so that the contact force between the probe 60 and the contact portion 29 is enhanced, which is beneficial to electrical testing.

[0076] Furthermore, through the design of the electrical auxiliary pad 292, when the electrical detection pad 291 fails, the probe 60 of the detection device 6 can still electrically connect the contact portion 29, so there is no need to scrap the entire wiring structure 2a, 2b, thereby avoiding a large amount of material cost waste.

[0077] In addition, if Figure 2C As shown, if all the contact portions 29 of the wiring structure 2c are connected in pairs, the detection device 6 can simultaneously connect more probes 61 to all the contact portions 29 to perform a comprehensive electrical detection operation.

[0078] Figure 3A The difference between this embodiment and the first embodiment lies in the combination of the contact portion 39 of the wiring structure 3a, and the other designs are substantially the same, so the same points will not be described in detail below.

[0079] like Figure 3A As shown, the contact portion 39 includes an electrical detection pad 291 exposed on the surface of the substrate body 20 , a plurality of electrical auxiliary pads 292 , 392 exposed on the surface of the substrate body 20 , and a conductor 290 connecting the electrical detection pad 291 and each of the electrical auxiliary pads 292 , 392 .

[0080] Therefore, when performing electrical testing, the multiple probes 62 of the testing device 6 can be docked with two sets of mutually electrically connected contact portions 39, so that a single probe 62 is aligned with three conductive bumps 29a on a single contact portion 39 (including an electrical testing pad 291 and two electrical auxiliary pads 292, 392), that is, the single probe 62 simultaneously contacts the three conductive bumps 29a to apply force on the electrical testing pad 291 and the multiple electrical auxiliary pads 292, 392, so as to perform random electrical testing. It should be understood that if all the contact portions 39 of the wiring structure 3c are docked in pairs, such as Figure 3B As shown, the testing device 6 can simultaneously connect more probes 63 to all the contact portions 39 to perform a comprehensive electrical testing operation.

[0081] FIG. 4A to FIG. 4E It is a cross-sectional schematic diagram of the electrical property detection method of the present invention applied in the manufacturing process of an electronic package 4 .

[0082] like Figure 4A As shown, a carrier 9 is provided, and at least one electronic structure 4a and a plurality of conductive pillars 23 are disposed on the carrier 9. Next, a coating layer 25 is formed on the carrier structure 24 so that the coating layer 25 covers the electronic structure 4a and the conductive pillars 23.

[0083] The carrier 9 is, for example, a plate made of semiconductor material (such as silicon or glass), on which a release layer 90 and a metal layer 91 such as titanium / copper are sequentially formed by coating, for example, so that a carrier structure 24 is formed on the metal layer 91 .

[0084] The supporting structure 24 includes at least one dielectric layer 240 and a circuit layer 241 combined with the dielectric layer 240 .

[0085] In this embodiment, the dielectric layer 240 is formed of a material such as polybenzoxazole (PBO), polyimide (PI), prepreg (PP) or other dielectric materials, and the circuit layer 241 and the dielectric layer 240 can be formed by an RDL process.

[0086] The electronic structure 4a includes an electronic body 21 of a semiconductor substrate and a circuit portion 22 combined with the electronic body 21, and the electronic body 21 has a plurality of conductive through-holes formed therein, wherein a plurality of conductive bumps 211, 222 electrically connecting the conductive through-holes and / or the circuit portion 22 can be formed as required.

[0087] In this embodiment, the electronic structure 4 a is connected to the circuit layer 241 of the supporting structure 24 by the circuit portion 22 through a plurality of conductive bumps 222 .

[0088] The conductive pillars 23 are disposed on the supporting structure 24 and electrically connected to the circuit layer 241 .

[0089] In this embodiment, the conductive pillars 23 are formed of a metal material such as copper or a solder material. For example, the conductive pillars 23 are formed by electroplating on the circuit layer 241 through an exposure and development process.

[0090] The coating layer 25 is an insulating material, such as polyimide (PI), dry film, or a packaging colloid or molding compound such as epoxy. For example, the coating layer 25 can be formed on the supporting structure 24 by a process such as liquid compound, injection, lamination, or compression molding.

[0091] In this embodiment, a flattening process can be performed to make the outer surface of the cladding layer 25 flush with the end surface of the conductive pillar 23 and the end surface of the conductive bump 211, so that the end surface of the conductive pillar 23 and the end surface of the conductive bump 211 are exposed from the outer surface of the cladding layer 25. For example, the flattening process removes part of the material of the conductive pillar 23, part of the material of the conductive bump 211, and part of the material of the cladding layer 25 by grinding.

[0092] like Figure 4B As shown, a wiring structure 2 b is formed on the cladding layer 25 , so that the wiring structure 2 b electrically connects the plurality of conductive pillars 23 and the plurality of conductive bumps 211 .

[0093] In this embodiment, the wiring structure 2b is as follows: Figure 2B In the design shown, the outermost insulating layer 200 can be used as a solder mask, and the outermost wiring layer 201 is exposed to the solder mask to be used as an electrical detection pad 291, an electrical auxiliary pad 292 and an electrical contact pad 202, such as a micro pad (commonly known as μ-pad) specification.

[0094] Furthermore, the wiring layer 201 is made of copper, and the insulating layer 200 is made of dielectric materials such as polybenzoxazole (PBO), polyimide (PI), prepreg (PP), or solder resist materials such as green paint and ink.

[0095] like Figure 4C As shown, an electrical testing operation is performed to connect the probe 60 of the testing device 6 to two sets of electrically connected contact portions 29, so that the single probe 60 simultaneously applies a force on the single contact portion 29 including the electrical testing pad 291 and the electrical auxiliary pad 292 to perform a random electrical testing operation.

[0096] In this embodiment, the conductive bump 29a may be combined on the electrical detection pad 291, the electrical auxiliary pad 292 and the electrical contact pad 202 before the electrical detection operation is performed, so that the single probe 60 contacts two conductive bumps 29a at the same time to apply force on the electrical detection pad 291 and the electrical auxiliary pad 292.

[0097] like Figure 4D As shown, a plurality of electronic components 26 are disposed on the wiring structure 2 b , and then a packaging layer 28 is used to cover the electronic components 26 .

[0098] In this embodiment, the electronic component 26 is an active component, a passive component or a combination of the two, and the active component is, for example, a semiconductor chip, and the passive component is, for example, a resistor, a capacitor and an inductor. In one embodiment, the electronic component 26 is, for example, a semiconductor chip such as a graphics processing unit (GPU), a high bandwidth memory (HBM), and the electronic structure 4a is used as a bridge die, which is electrically connected to the wiring structure 2b through the conductive bumps 211, thereby electrically bridging at least two electronic components 26.

[0099] Furthermore, the electronic component 26 is electrically connected to the electrical contact pad 202 and the contact portion 29 through the conductive bumps 29 a.

[0100] In addition, the packaging layer 28 is an insulating material, such as polyimide (PI), dry film, packaging colloid or molding compound such as epoxy, which can be formed on the wiring structure 2b by lamination or molding. It should be understood that the material forming the packaging layer 28 can be the same as or different from the material of the covering layer 25.

[0101] In addition, the primer 262 may be formed between the electronic component 26 and the wiring structure 2b to cover the conductive bumps 29a, and then the packaging layer 28 may be formed to cover the primer 262 and the electronic component 26. Alternatively, in other embodiments, the packaging layer 28 may cover the electronic components 26 and the conductive bumps 29a at the same time without forming the primer 262.

[0102] Therefore, through the design of the electrical auxiliary pad 292, the probe 60 of the detection device 6 can contact the two conductive bumps 29a to exert a force on the electrical detection pad 291 and the electrical auxiliary pad 292, thereby enhancing the contact force between the probe 60 and the contact portion 29, which is beneficial to electrical testing.

[0103] like Figure 4E As shown in FIG. 1 , the carrier 9 and the release layer 90 thereon are removed, and then the metal layer 91 is removed to expose the carrier structure 24. Figure 4D The cutting path L shown is used for a singulation process and forms a plurality of conductive elements 27 on the supporting structure 24 , so that the conductive elements 27 are electrically connected to the circuit layer 241 to obtain an electronic package 4 .

[0104] In this embodiment, when peeling off the release layer 90, the metal layer 91 is used as a barrier to avoid damaging the dielectric layer 240 of the supporting structure 24. After removing the supporting member 9 and the release layer 90 thereon, the metal layer 91 is removed by etching to expose the circuit layer 241.

[0105] Furthermore, the conductive element 27 may include a metal bump such as copper and a solder material formed on the metal bump. It should be understood that when the number of the contacts (IO) is insufficient, a layer increase operation can still be performed through the RDL process to reconfigure the number and position of the IOs of the supporting structure 24.

[0106] In addition, the electronic package 4 can be disposed on an electronic device (not shown) such as a package substrate or a circuit board through the conductive elements 27 .

[0107] Therefore, through the design of the electrical auxiliary pad 292, when the electrical detection pad 291 fails, the probe 60 of the detection device 6 can still electrically connect the contact portion 29, so there is no need to scrap the entire electronic package 4, which is beneficial to reducing the cost of the electronic package 4 or subsequent electronic products.

[0108] In summary, the electrical detection method of the present invention, through the design of the electrical auxiliary pad, makes a contact portion include the electrical detection pad and the electrical auxiliary pad. Therefore, the probe in the electrical detection method of the present invention will simultaneously apply force to the electrical detection pad and the electrical auxiliary pad, so that the contact force between the probe and the contact portion is enhanced, which is beneficial to electrical testing.

[0109] Furthermore, through the design of the electrical auxiliary pad, when the electrical detection pad fails, the probe of the detection device can still electrically connect the contact part, so there is no need to scrap the entire wiring structure to avoid a large amount of waste of material costs. Therefore, compared with the prior art, the electrical detection method of the present invention can effectively reduce the cost of semiconductor packages or electronic products.

[0110] The above embodiments are only used to illustrate the principles and technical effects of the present invention, and are not used to limit the present invention. Any person skilled in the art may modify the above embodiments without violating the inventive concept and scope of the present invention. Therefore, the scope of protection of the present invention should be as listed in the claims.

Claims

1. An electrical property detection method, comprising: A wiring structure is provided, which includes a substrate body and a plurality of contact portions combined with the substrate body, wherein each of the contact portions includes an electrical detection pad exposed on the surface of the substrate body, an electrical auxiliary pad exposed on the surface of the substrate body, and a conductor electrically connecting the electrical detection pad and the electrical auxiliary pad; and The probe of the detection device is docked with the contact part, so that the single probe simultaneously applies force to the electrical detection pad and the electrical auxiliary pad of the single contact part.

2. The electrical property detection method according to claim 1, wherein: The substrate body is provided with a plurality of electrical contact pads on its surface.

3. The electrical property detection method according to claim 2, wherein: A conductive bump is formed on the electrical contact pad.

4. The electrical property detection method according to claim 1, wherein: The conductor is a conductive trace exposed on the surface of the substrate body.

5. The electrical property detection method according to claim 1, wherein: The conductor is a conductive trace embedded in the substrate body.

6. The electrical property detection method according to claim 1, wherein: At least two of the plurality of contact portions are electrically connected to each other through a wiring layer combined with the substrate body.

7. The electrical property detection method according to claim 1, wherein: The contact point portion includes a plurality of the electrical auxiliary pads, so that the conductor is electrically connected to the electrical detection pad and the plurality of the electrical auxiliary pads.

8. The electrical property detection method according to claim 1, wherein: Conductive bumps are formed on the electrical testing pad and the electrical auxiliary pad so that the probe can contact the conductive bumps.

9. The electrical property detection method according to claim 1, wherein: The probe has a width of at least 55 microns.

10. The electrical property detection method according to claim 1, wherein: The distance between two adjacent probes of the detection device is at least 80 microns.

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