Wafer tester and wafer testing apparatus

Abstract

The application relates to the technical field of wafer detection, and specifically provides a wafer tester and wafer testing equipment, wherein the wafer tester comprises a bearing piece, a heating assembly and a mounting assembly; the bearing piece is used for arranging a target wafer; the heating assembly is connected with the bearing piece, and the heating assembly comprises a heating component and a first insulating shielding piece arranged outside the heating component; the first insulating shielding piece is used for shielding a first electromagnetic interference, and the first electromagnetic interference is electromagnetic interference of the heating component on the target wafer; the mounting assembly is connected with the heating assembly, and the mounting assembly comprises a mounting seat and a second insulating shielding piece arranged between the mounting seat and the heating assembly; the mounting seat is configured to be connected with a driving device; and the second insulating shielding piece is used for shielding a second electromagnetic interference, and the second electromagnetic interference is electromagnetic interference of the driving device on the target wafer. The wafer tester and wafer testing equipment can effectively shield electromagnetic interference and improve detection precision.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of wafer detection, in particular to a wafer tester and a wafer testing device. BACKGROUND

[0002] Wafer is one of the basic materials for making semiconductor, and needs to be tested to ensure the quality of finished products. During testing, the wafer is set on a carrier and heated to a certain temperature, and the electrical properties of the wafer are tested by driving devices and detection instruments. In the existing wafer tester, the wafer detection is easily affected by electromagnetic interference, and the detection accuracy is low. SUMMARY

[0003] The wafer tester and wafer testing device provided by the embodiments of the present application at least solve the problems of existing wafer detection being easily affected by electromagnetic interference and low detection accuracy, and can effectively shield electromagnetic interference and improve detection accuracy.

[0004] In a first aspect, the present application provides a wafer tester, comprising a bearing part for setting a target wafer; a heating assembly connected to the bearing part, the heating assembly comprising a heating component, and a first insulating shielding part arranged outside the heating component, the first insulating shielding part being used for shielding a first electromagnetic interference, the first electromagnetic interference being electromagnetic interference of the heating component on the target wafer; and a mounting assembly connected to the heating assembly, the mounting assembly comprising a mounting seat configured to be connected to a driving device, and a second insulating shielding part arranged between the mounting seat and the heating assembly, the second insulating shielding part being used for shielding a second electromagnetic interference, the second electromagnetic interference being electromagnetic interference of the driving device on the target wafer.

[0005] In an embodiment of the present application, the first insulating shielding part comprises a first insulating component, a second insulating component and a first electromagnetic shielding component, the first insulating component is connected to the mounting assembly, the heating component is arranged on the first insulating component, the second insulating component is connected to the bearing part, and the first electromagnetic shielding component is arranged between the second insulating component and the heating component, and the first electromagnetic shielding component is grounded.

[0006] In an embodiment of the present application, the first insulating shielding part further comprises a first grounding component, the first grounding component comprises a grounding contact part and a grounding connecting part connected to each other, the grounding contact part is arranged between the first electromagnetic shielding component and the second insulating component, the grounding contact part is arranged in a square shape structure, a hollow is arranged at the center of the grounding contact part, and the grounding connecting part is grounded.

[0007] In one embodiment of the present application, a plurality of first thermal insulation members are further included, which are arranged between the first insulation shield and the second insulation shield, and are connected to the first insulation shield and the second insulation shield respectively, so as to reduce the heat conduction area between the heating assembly and the mounting assembly through the first thermal insulation members.

[0008] In one embodiment of the present application, the first thermal insulation member is arranged in a cylindrical structure, and a fastener is arranged in the first thermal insulation member, which includes a head portion and a connecting portion; the head portion is arranged on the side of the mounting seat away from the carrier, and a spring pad is arranged between the head portion and the mounting seat, and two wedge-shaped gaskets are arranged between the spring pad and the mounting seat; the connecting portion is connected to the carrier, and an insulation layer is arranged on at least part of the connecting portion.

[0009] In one embodiment of the present application, the second insulation shield includes a third insulation component and a second electromagnetic shielding component, the third insulation component is arranged on the mounting seat, and the second electromagnetic shielding component is arranged on the third insulation component, the second electromagnetic shielding component is arranged to be grounded, and the second electromagnetic shielding component is connected to the heating assembly.

[0010] In one embodiment of the present application, the mounting seat includes a first mounting support configured to be connected to the driving device, a plurality of limiting holes are arranged on the first mounting support, and a plurality of the limiting holes are arranged in sequence along the circumference of the target wafer, and a second thermal insulation member is arranged in each of the limiting holes; and a second mounting support arranged on the second thermal insulation member, and the second mounting support is connected to the heating assembly.

[0011] In one embodiment of the present application, a mounting through hole is arranged on the first mounting support, a plurality of leveling holes are arranged on the hole wall of the mounting through hole, a plurality of the leveling holes are arranged in sequence along the circumference of the target wafer, a first leveling member is arranged in each of the leveling holes, the first leveling member is configured to be movable and then fixed relative to the leveling hole, and a first leveling portion is arranged on the first leveling member; a second leveling member is movably arranged in the mounting through hole, a second leveling portion corresponding to the first leveling portion is arranged on the second leveling member, and the second leveling portion abuts against the first leveling portion; wherein the first leveling member moves to drive the second leveling member to move.

[0012] In one embodiment of the present application, an anti-interference coating is arranged on the carrier surface of the carrier, the anti-interference coating is used to shield external interference, and the carrier surface is the surface of the carrier contacting the target wafer.

[0013] In a second aspect, the present application provides a wafer testing device, comprising a driving device, a precision collector, a compensation calculator, a controller, and the wafer tester according to any one of the above-mentioned aspects; the driving end of the driving device is connected with the mounting seat; the precision collector is used for detecting the real-time motion error value of the target wafer; the compensation calculator is electrically connected with the precision collector, and the compensation calculator is used for calculating the corresponding motion compensation value according to the real-time motion error value; the controller is electrically connected with the compensation calculator and the driving device respectively, and the controller is used for adjusting the driving parameter of the driving device according to the motion compensation value, so that the real-time motion error value is not greater than a preset error value.

[0014] The above technical solutions of the present application have the following beneficial effects compared with the prior art:

[0015] The wafer tester and the wafer testing device provided by the present application shield electromagnetic interference by setting the first insulating shielding member and the second insulating shielding member, so as to prevent the electromagnetic interference from affecting the detection accuracy of the tester. In the case where the detection accuracy is guaranteed, the overall detection reliability is enhanced, the problem of repeated detection is avoided, and the detection efficiency is improved to a certain extent. In addition, in the case where the electromagnetic interference is shielded, the hardware loss of the instrument is reduced, the service life of the instrument is effectively prolonged, and the cost of repair and maintenance is saved. BRIEF DESCRIPTION OF DRAWINGS

[0016] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings needed in the following embodiment or prior art description will be briefly introduced. Obviously, the drawings in the following description are only some embodiments of the present application, and those skilled in the art can also obtain other embodiments according to these drawings without creative labor. In the drawings:

[0017] Figure 1 is a structure schematic diagram of the wafer tester in the preferred embodiment of the present application.

[0018] Figure 2 is an explosion structure schematic diagram of the heating assembly in the preferred embodiment of the present application.

[0019] Figure 3 is an explosion structure schematic diagram of the wafer tester in the preferred embodiment of the present application.

[0020] Figure 4 is a structure schematic diagram of the heat insulation group in the preferred embodiment of the present application.

[0021] Figure 5 is a partial sectional structure schematic diagram of the wafer tester in the preferred embodiment of the present application.

[0022] Figure 6is an exploded structural schematic diagram of the mounting assembly in the preferred embodiment of the present application.

[0023] Figure 7 is a sectional structural schematic diagram of the mounting assembly in the preferred embodiment of the present application.

[0024] Figure 8 is a structural schematic diagram of the heating component in the preferred embodiment of the present application.

[0025] Figure 9 is a dimensional schematic diagram of the heating component in the preferred embodiment of the present application.

[0026] Figure 10 is one of the structural schematic diagrams of the carrier in the preferred embodiment of the present application.

[0027] Figure 11 is a sectional structural schematic diagram of the carrier in the preferred embodiment of the present application.

[0028] Figure 12 is the second structural schematic diagram of the carrier in the preferred embodiment of the present application.

[0029] Figure 13 is an electrical connection structural schematic diagram of the controller in the preferred embodiment of the present application.

[0030] Among the above-mentioned drawings, the following reference signs are included:

[0031] 10, carrier; 11, carrier surface; 111, adsorption groove; 112, adsorption hole; 113, annular air suction group; 114, air suction hole; 115, anti-interference coating; 12, adsorption channel; 20, heating assembly; 21, heating component; 22, first insulation shielding member; 221, first insulation component; 222, second insulation component; 223, first electromagnetic shielding component; 224, first grounding component; 2241, grounding contact part; 2242, grounding connection part; 2243, hollow part; 30, mounting assembly; 31, mounting seat; 311, first mounting support; 3111, limiting hole; 3112, second heat insulation member; 3113, mounting through hole; 31131, leveling hole; 31132, first leveling member; 31133, first leveling part; 31134, second leveling member; 31135, second leveling part; 312, second mounting support; 32, second insulation shielding member; 321, third insulation component; 322, second electromagnetic shielding component; 323, second grounding component; 40, heat insulation group; 41, first heat insulation member; 42, fastening member; 421, connection part; 4211, insulation layer; 422, end part; 423, elastic pad; 424, wedge-shaped gasket; 51, temperature sensor; 52, precision collector; 60, compensation calculator; 70, controller. DETAILED DESCRIPTION

[0032] Embodiments of the present application will be described in more detail with reference to the drawings. While several embodiments of the application are shown in the drawings, it is understood that the application can be embodied in various forms and should not be construed as limited to the embodiments set forth herein, but rather should be construed broadly. It should be understood that the drawings and detailed description thereto are not intended to limit the scope of the present application, but are merely intended to illustrate exemplary aspects of the present application.

[0033] It should be noted that in semiconductor manufacturing and testing, the wafer needs to be heated to a certain temperature, for example, 150-200℃, for electrical performance testing. The corresponding temperature accuracy range is within ±0.5℃, and the dimensional deviation of each position on the wafer is within ±0.5℃.

[0034] In the prior art, a wafer heater is arranged between the wafer carrier and the wafer base. During heating, the heater generates heat and heats the wafer carrier according to heat conduction, thereby heating the wafer on the carrier. Generally, the heater is powered. During heating, the powered heater generates electromagnetic interference.

[0035] In addition, the wafer base is connected to the driving end of the driving device and is driven by the driving device. The driving device involves more powered components. During detection, the driving device also generates electromagnetic interference.

[0036] Electromagnetic interference can cause signal distortion, reduced resolution, and other problems, which in turn reduces detection accuracy. Due to the decrease in detection accuracy, the likelihood of detection errors increases, which leads to a decrease in detection reliability. In order to ensure the reliability of the detection results, repeated detection is required, which reduces the detection efficiency. In addition, under the influence of electromagnetic interference, the service life of the corresponding device and instrument is also easily affected, and the maintenance cost is high.

[0037] To solve the above problems, referring to Figure 1 The present application provides a wafer tester, which comprises a bearing part 10, a heating assembly 20 and a mounting assembly 30.

[0038] The bearing part 10 is used to set the target wafer. Preferably, the bearing part 10 is set to a circular structure to match the shape of the target wafer.

[0039] Referring to Figure 1 and Figure 2 The heating assembly 20 is connected to the bearing part 10, and those skilled in the art can set the connection mode of the two according to actual needs, for example, the two are in pressure contact through screws, or high-temperature resistant glue is used for bonding. The heating assembly 20 comprises a heating component 21 and a first insulating shield 22.

[0040] The heating component 21 is powered, and after being powered, the heating component 21 generates heat and conducts the heat to the bearing component 10, and finally realizes heating of the target wafer, so that the target wafer reaches the temperature required for testing, for example, 175°C, and then cooperates with the corresponding testing instrument, for example, a probe, etc., to realize testing of the target wafer.

[0041] In the prior art, there are many types of heating instruments, such as resistance heating, infrared heating, etc. Those skilled in the art can set the heating component 21 according to actual needs to realize heating of the target wafer.

[0042] Considering the heating efficiency, the heating component 21 and the bearing component 10 should be as close as possible to increase the heat conduction area between the two. At the same time, the bearing component 10 and the target wafer should also be as close as possible for better heating and detection.

[0043] The first insulation shielding 22 is arranged outside the heating component 21, and the first insulation shielding 22 is used to shield the first electromagnetic interference, that is, the electromagnetic interference of the heating component 21 to the target wafer. By arranging the first insulation shielding 22 outside the heating component 21 to shield the first electromagnetic interference, the detection accuracy of the tester can be effectively improved.

[0044] Those skilled in the art can set different shielding modes according to actual needs. For example, by arranging a metal shielding material to prevent electromagnetic energy from entering and exiting, the influence of electromagnetic interference can be reduced. Alternatively, by grounding to introduce interference current into the ground, the influence of electromagnetic interference can be reduced.

[0045] Referring to Figure 1 and Figure 3 As shown, the mounting assembly 30 is connected to the heating assembly 20, and those skilled in the art can set the connection mode of the two according to actual needs, for example, by screwing the two in pressure contact.

[0046] The mounting assembly 30 includes a mounting seat 31 and a second insulation shielding 32. The mounting seat 31 is used to bear corresponding components and serves as a connection to the driving device. For example, mounting holes are arranged on the mounting seat 31 to cooperate with screws, bolts, etc. to realize connection with the driving end of the driving device, so as to cooperate with the corresponding testing instrument, for example, a probe, etc., to realize testing of the target wafer.

[0047] The driving device and the testing instrument belong to the prior art, and those skilled in the art can set them as needed. Their structure, working principle, etc. will not be described again.

[0048] The second insulation shield 32 is arranged between the mounting base 31 and the heating assembly 20. The second insulation shield 32 is used to shield the second electromagnetic interference, which is the electromagnetic interference of the driving device to the target wafer. By arranging the second insulation shield 32 on the mounting base 31 to shield the second electromagnetic interference, the detection accuracy of the detector can be effectively improved.

[0049] Those skilled in the art can set different shielding modes according to actual needs. For example, by arranging a metal shielding material to prevent electromagnetic energy from entering and exiting, the influence of electromagnetic interference can be reduced. Alternatively, by grounding to introduce interference current into the ground, the influence of electromagnetic interference can be reduced.

[0050] During testing, the target wafer is arranged on the carrier 10 and heated by the heating component 21. The heat of the heating component 21 is conducted to the carrier 10 and achieves heating of the target wafer, so that the target wafer reaches the required temperature for testing. After heating is completed, the target wafer can be tested by a corresponding testing instrument, such as a probe, etc. During testing, the first insulation shield 22 and the second insulation shield 32 cooperate with each other to shield the corresponding electromagnetic interference, thereby effectively improving the detection accuracy, enhancing the detection reliability, improving the detection efficiency, and prolonging the service life of the detector.

[0051] The wafer tester described in the present application shields electromagnetic interference by arranging the first insulation shield 22 and the second insulation shield 32 to prevent electromagnetic interference from affecting the detection accuracy of the tester. In the case where the detection accuracy is guaranteed, the overall detection reliability is enhanced, the problem of repeated detection is avoided, and the detection efficiency is improved to some extent. In addition, in the case where electromagnetic interference is shielded, the instrument hardware wear is reduced, the service life is effectively prolonged, and the cost of repair and maintenance is saved.

[0052] Referring to Figure 2 and Figure 5 As shown in the figures, in some embodiments, the first insulation shield 22 includes a first insulation component 221, a second insulation component 222, and a first electromagnetic shielding component 223.

[0053] The second insulation component 222 is arranged between the carrier 10 and the heating component 21, and the second insulation component 222 is connected with the carrier 10 to achieve insulation between the carrier 10 and the heating component 21. Preferably, the second insulation component 222 is arranged as an epoxy resin plate to reduce the leakage value.

[0054] The first electromagnetic shielding component 223 is arranged between the second insulating component 222 and the heating component 21, and is arranged to be grounded to absorb and conduct electromagnetic interference of the heating component 21 to the ground, so as to avoid the influence of the first electromagnetic interference on the detection accuracy. Preferably, the first electromagnetic shielding component 223 is arranged as a permalloy plate, which has high magnetic permeability, low coercive force and good mechanical strength, and can well shield electromagnetic interference.

[0055] The heating component 21 is arranged between the first insulating component 221 and the first electromagnetic shielding component 223, and is compressed by the first insulating component 221, so that the heating component 21 is in close contact with other components, thereby increasing the heat conduction area and ensuring that heat is conducted to the carrier 10 as quickly as possible to heat the target wafer and improve the heating efficiency.

[0056] Preferably, the material of the first insulating component 221 is ceramic, which can well play the role of insulation and heat insulation on the basis of compression, thereby improving the heating efficiency.

[0057] Further, as shown in Figure 2 In some embodiments, the wafer tester provided by the application further comprises a first grounding component 224.

[0058] The first grounding component 224 comprises a grounding contact portion 2241 and a grounding connecting portion 2242 connected to each other. The grounding contact portion 2241 is arranged between the first electromagnetic shielding component 223 and the second insulating component 222, and is arranged in a square shape. The center of the grounding contact portion 2241 is provided with an opening 2243.

[0059] By arranging the structure, the number of grounding points is effectively increased on the basis of realizing grounding shielding, so that the overall grounding resistance is small, the shielding effect is improved, and the detector is prevented from being damaged and the service life of the detector is prolonged. The grounding connecting portion 2242 is connected with an external wire or the like to be arranged to be grounded. Preferably, the first grounding component 224 is arranged as a copper foil.

[0060] As shown in Figure 3 In some embodiments, the wafer tester provided by the application further comprises a plurality of first heat insulation components 41. The plurality of first heat insulation components 41 are arranged between the first insulating shielding component 22 and the second insulating shielding component 32, and the first heat insulation components 41 are respectively connected to the first insulating shielding component 22 and the second insulating shielding component 32. Those skilled in the art can arrange the connection mode according to actual needs, for example, by arranging a screw connection.

[0061] In the actual detection process, not all the heat generated by the heating component 21 is conducted to the carrier 10 to heat the target wafer, and a part of the heat is conducted to the mounting seat 31 side.

[0062] Because the mounting seat 31 side is also provided with other devices, such as driving device, visual detection device, etc., in the case of heat conduction from the heating component 21 to the mounting seat 31 side, the mounting seat 31 and the devices nearby are easily affected, not only the service life is reduced, but also the thermal expansion and contraction phenomenon may occur due to the cold and hot difference in the case of replacing the wafer and testing the wafer, and further affect the flatness of the upper carrier disc, and finally affect the wafer detection precision.

[0063] In addition, during detection, the number of target wafers is large. The problem of heat loss prolongs the heating time of a single time and reduces the heating efficiency. After a plurality of detections, the overall detection efficiency is greatly reduced, and it is difficult to meet the demand of short-time heating and high-efficiency detection.

[0064] Therefore, the first heat insulation piece 41 is arranged between the first insulation shielding piece 22 and the second insulation shielding piece 32, and the heat conduction area between the mounting seat 31 and the carrier 10 is reduced.

[0065] Because the first heat insulation piece 41 is provided with a plurality of, the contact area of the carrier 10 is reduced by the plurality of first heat insulation pieces 41, and in the case of contact type heat conduction, the heat conduction area of the carrier 10 to the mounting seat 31 is correspondingly reduced, thereby reducing the heat loss of the heating component and realizing heat insulation. The use life of the other devices on the mounting seat 31 side is prolonged.

[0066] Taking the first heat insulation piece 41 in the shape of a cylinder as an example, assuming that the first heat insulation piece 41 in the shape of a cylinder is connected with the two insulation shielding pieces through the circular end face, the corresponding heat conduction area, that is, the product of the circular end face area of the first heat insulation piece 41 and the number of the first heat insulation pieces 41. It can be imagined that the heat conduction area value is smaller than that of the two insulation shielding pieces in direct surface contact.

[0067] According to Fourier's law, in the case of reducing the heat conduction area, the heat transferred is also reduced. At the same time, other media between the first heat insulation pieces 41 are usually air. The thermal conductivity of air at normal temperature and pressure is poor, usually much smaller than that of solid. Therefore, the heat transfer through air can be ignored.

[0068] In the case of reducing the heat, the possibility of thermal expansion and contraction phenomenon of each component on the mounting seat 31 side in the process of wafer detection due to the change of cold and hot is also greatly reduced. The adverse effects caused by factors such as driving device driving and machining error, such as vibration and deformation, are also effectively reduced due to the small contact area of the plurality of first heat insulation pieces 41, the stability of the detector as a whole is improved, and the high test precision is ensured.

[0069] In addition, as much heat as possible can be conducted to the carrier 10 to heat the target wafer, reduce the time required for heating the target wafer at one time, and achieve the effect of improving the heating efficiency and the detection efficiency.

[0070] The specific structural shape, size, arrangement position, and number of the first heat insulation member 41 can be set by a person skilled in the art according to actual requirements.

[0071] Preferably, the first heat insulation member 41 is made of a material that is resistant to high temperature, insulating, and high-rigid. For example, the material is ceramic or glass fiber.

[0072] Referring to Figure 3 and Figure 5 In some embodiments, the first heat insulation member 41 is arranged in a cylindrical structure. The first heat insulation member 41 in the cylindrical structure can minimize the stress change caused by the change of the support force, improve the stability of the detector, and ensure high testing accuracy.

[0073] Further, the first heat insulation member 41 in the cylindrical structure is provided with a fastener 42 to realize the connection and assembly with the mounting seat 31 and the two insulating shields.

[0074] Preferably, the heating component 21 and the first insulating shield 22 are provided with through holes corresponding to the first heat insulation member 41, so that the fastener 42 in the first heat insulation member 41 passes through and realizes the firm connection with the carrier 10.

[0075] Preferably, the second mounting seat 312 and the second insulating shield 32 are provided with through holes corresponding to the first heat insulation member 41, so that the fastener 42 in the first heat insulation member 41 passes through, and the end head part 422 of the fastener 42 is arranged on the side of the second mounting seat 312 away from the second insulating shield 32.

[0076] The fastener 42 includes a connecting part 421 and an end head part 422. The connecting part 421 is connected with the carrier 10. For example, the connecting part 421 is provided with a thread, and the carrier 10 is provided with a threaded hole, and the two are threadedly connected. The end head part 422 is arranged on the side of the mounting seat 31 away from the carrier 10. Preferably, the fastener 42 is arranged as a screw.

[0077] In view of the high temperature environment during wafer detection, the different thermal expansion coefficients between the fastener 42 and the connection will cause the change of the clamping force. In order to solve this problem, the end part 422 of the fastener 42 and the mounting seat 31 are provided with an elastic pad 423, and the elastic pad 423 and the mounting seat 31 are provided with two wedge-shaped gaskets 424. By setting this structure, the elastic pad 423 can be elastically deformed to increase the friction force to achieve the anti-loose function, and at the same time, the two wedge-shaped gaskets 424 are tightly wedged with each other to achieve the anti-loose function, which can effectively reduce the influence of high temperature, ensure the clamping force of the fastener 42, and prevent the fastener 42 from loosening.

[0078] Further, at least part of the connecting part 421 is provided with an insulating layer 4211. By setting the insulating layer 4211, the performance interference of the fastener 42 to the heating component 21 can be effectively avoided. Preferably, at least the part of the connecting part 421 corresponding to the contact heating component 21 is provided with an insulating layer 4211.

[0079] When the probe is used as a test instrument to test the target wafer, the probe will generate a downward pressure. Among them, the maximum pressure of a single point can reach 10kg. Under the premise of setting multiple first heat insulation pieces 41 to reduce the heat conduction area, how to ensure that the detector is balanced under pressure and does not affect the heat insulation effect needs to be considered.

[0080] In order to balance the good stability and heat insulation effect, referring to Figure 4 , in some embodiments, at least part of the first heat insulation piece 41 is provided as a heat insulation group 40.

[0081] The heat insulation group 40 is provided in multiple groups, and the multiple heat insulation groups 40 are sequentially arranged along the circumference of the target wafer. Each heat insulation group 40 is provided with three first heat insulation pieces 41, and the three first heat insulation pieces 41 are arranged in a triangular distribution. Figure 4 In the embodiment, the three first heat insulation pieces 41 in the heat insulation group 40 are shown in a triangular shape by a dashed line. The triangular heat insulation group 40 has high structural stability and strong bearing capacity.

[0082] Along the radial direction of the target wafer, the number of the first heat insulation pieces 41 located at the outer circle is not less than the number of the first heat insulation pieces 41 located at the inner circle, so as to adapt to the target wafer and better realize the support.

[0083] Preferably, the triangular structure of the heat insulation group 40 is an isosceles triangle or an equilateral triangle. The apex angle of each triangle is arranged on the same circle at the inner circle, and the other two angles of each triangle are arranged on the same circle at the outer circle. Figure 4 In the embodiment, the two circles of the inner circle and the outer circle are shown by a dotted line.

[0084] Further, the heat insulation group 40 is provided with four groups, and the four groups of heat insulation groups 40 are uniformly and spacedly distributed along the circumference of the target wafer. Correspondingly, eight first heat insulation pieces 41 are provided on the outer circle, and four first heat insulation pieces 41 are provided on the inner circle. By setting this structure, the stability of the detector can be higher under the condition that the heat conduction area is as small as possible, and the high test accuracy is ensured.

[0085] Referring to Figure 6 and Figure 7 It is shown that the wafer tester of the present application, in some embodiments, the mounting seat 31 includes a first mounting support 311 and a second mounting support 312. Among them, the first mounting support 311 is used to be connected with the driving device. The limit hole 3111 and the mounting hole are provided on the first mounting support 311, and the connection with the driving end of the driving device is realized through the mounting hole matched with the screw, bolt and the like.

[0086] The limit hole 3111 on the first mounting support 311 is provided with a plurality of limit holes 3111, which are sequentially arranged along the circumference of the target wafer.

[0087] The skilled in the art can set the distance between the adjacent two limit holes 3111 according to the actual needs. Exemplarily, each limit hole 3111 is uniformly and spacedly distributed. Alternatively, the total number of limit holes 3111 is set to be even, and two limit holes 3111 form a group, and the interval between the two limit holes 3111 in the same group is smaller than the interval between the adjacent two limit holes 3111 in different groups.

[0088] Each limit hole 3111 is provided with a second heat insulation piece 3112, and the second mounting support 312 is arranged on the second heat insulation piece 3112, and the first heat insulation piece 41 is arranged on the second mounting support 312, so as to realize the connection between the second mounting support 312 and the heating assembly 20. By setting the second heat insulation piece 3112 to cooperate with the first heat insulation piece 41, further heat insulation is realized.

[0089] It can be imagined that although the first heat insulation piece 41 effectively reduces the loss of heat to the side of the mounting seat 31, it is difficult to achieve complete elimination. Therefore, in the case of setting the first heat insulation piece 41, the mounting seat 31 is set to a split structure and a plurality of second heat insulation pieces 3112 are arranged between the two supports, which can further improve the heat insulation effect, avoid the influence of high temperature on other devices on the side of the mounting seat 31, and prolong the service life.

[0090] In the case of heat reduction, the possibility of thermal expansion and contraction of each component on the side of the mounting seat 31 due to cold and heat changes during wafer detection is also greatly reduced. In addition, the adverse effects caused by factors such as drive device driving, machining errors, etc., such as vibration, deformation, etc., are also effectively reduced due to the small contact area of the plurality of second thermal insulation pieces 3112, the stability of the detector as a whole is improved, and high test accuracy is ensured.

[0091] Preferably, the second thermal insulation piece 3112 is made of a material that is resistant to high temperature, insulating and high rigidity. Exemplarily, the material thereof is set to ceramic or glass fiber.

[0092] Preferably, the second thermal insulation piece 3112 is set to a block structure, so as to focus on the stability of the structure while taking into account the heat insulation effect.

[0093] In the wafer testing process, the factors affecting the detection accuracy include, in addition to electromagnetic interference, flatness precision error. Considering the requirement of the detector for flatness precision, the wafer tester described in the present application is configured, in some embodiments, that the second mounting support 312 is movable relative to the first mounting support 311, so as to realize the adjustment of the flatness precision of the mounting seat 31, reduce the flatness precision error, and thereby avoid the influence of the flatness precision error of the mounting seat 31 on the flatness precision above.

[0094] Specifically, referring to Figure 6 and Figure 7 , the first mounting support 311 is provided with a mounting through hole 3113, and the first mounting support 311 is preferably set to a ring or a ring-like structure.

[0095] A plurality of leveling holes 31131 are arranged on the hole wall of the mounting through hole 3113, and the plurality of leveling holes 31131 are arranged in sequence along the circumference of the target wafer. Preferably, the extension direction of the leveling hole 31131 is perpendicular to the extension direction of the mounting through hole 3113.

[0096] A first leveling piece 31132 is arranged in each leveling hole 31131, the first leveling piece 31132 is configured to be movable and then fixed relative to the leveling hole 31131, and the first leveling piece 31132 is provided with a first leveling portion 31133. Preferably, the first leveling piece 31132 is set to a screw, and the leveling hole 31131 is provided with a corresponding thread, and the two are threadedly connected to convert rotation into axial movement. Preferably, the first leveling portion 31133 is set to an inclined surface structure.

[0097] The second leveling piece 31134 is movably arranged in the mounting through hole 3113, and the second leveling piece 31134 is provided with a second leveling portion 31135 corresponding to the first leveling portion 31133, and the second leveling portion 31135 abuts against the first leveling portion 31133.

[0098] Preferably, the second leveling member 31134 is also arranged in a ring shape to reduce the contact area with the second mounting support 312 as much as possible on the basis of achieving the flatness precision adjustment.

[0099] The first leveling part 31133 is arranged in a groove structure. Preferably, the first leveling part 31133 is taken along a plane in which the axis of the mounting hole 3113 is located, and the groove section obtained by the taking is a triangle, so as to cooperate with the first leveling part 31133 through the groove surface corresponding to one side of the triangle.

[0100] In the case that the first leveling member 31132 is forced to move, the first leveling part 31133 and the second leveling part 31135 cooperate to convert the radial movement of the first leveling member 31132 relative to the mounting hole 3113 into the axial movement of the second leveling member 31134 relative to the mounting hole 3113, so as to drive the second leveling member 31134 to move.

[0101] Since the first leveling member 31132 is arranged in multiple, the adjustment on the corresponding first leveling member 31132 can realize the flatness precision adjustment of the second mounting support 312, reduce the flatness precision error, and thus avoid the influence of the flatness precision error of the mounting seat 31 on the flatness precision above.

[0102] Referring to Figure 6 In some embodiments, the wafer tester includes a third insulating part 321 and a second electromagnetic shielding part 322.

[0103] The third insulating part 321 is arranged on the second mounting support 312 to realize the insulating connection with the second mounting support 312. Preferably, the third insulating part 321 is arranged as ceramic, which can effectively play the role of insulation and heat insulation.

[0104] The second electromagnetic shielding part 322 is arranged on the third insulating part 321, and the second electromagnetic shielding part 322 is arranged to be grounded to absorb and conduct the electromagnetic interference of the driving device to the ground, so as to avoid the influence of the second electromagnetic interference on the detection precision. Preferably, the second electromagnetic shielding part 322 is arranged as a permalloy plate, which has high magnetic permeability, low coercive force and good mechanical strength, and can well shield electromagnetic interference.

[0105] Those skilled in the art can arrange the connection mode between the parts according to actual needs, for example, using screws to make the parts in pressure contact, or using high-temperature-resistant glue to stick.

[0106] Furthermore, the second insulating shield 32 also includes a second grounding component 323. The second grounding component 323 is disposed on the second electromagnetic shield 322 and grounded. The second grounding component 323 is configured with a "T"-shaped structure to increase the number of grounding points, reduce grounding resistance, and improve shielding effect.

[0107] Preferably, the second grounding component 323 is configured as copper foil.

[0108] Reference Figure 8 and Figure 9 As shown, the heating element 21 is configured as a coiled heating wire. Those skilled in the art can set the specific coiled shape according to actual needs, for example, it can be configured as a planar spiral structure.

[0109] During heating, the material near the center of the target wafer dissipates heat slowly along the radial direction, while the outer periphery dissipates heat quickly. To ensure the temperature uniformity of the support 10, the coiling density of the heating element 21 needs to be adjusted to achieve a lower internal energy density and a higher external energy density, thereby maintaining a consistent internal and external temperature.

[0110] Therefore, the coiling density of the heating element 21 is set to gradually decrease along the direction from the outer periphery of the target wafer towards the center of the target wafer. The coiling density of the heating element 21 includes the width of the heating wire of the heating element 21 and the spacing between adjacent heating wires.

[0111] The distribution structure with a sparse inner layer and a dense outer layer can effectively ensure that the internal and external temperatures of the heating component 21 remain consistent during heating, thereby achieving uniform heating and improving heating efficiency.

[0112] Preferably, the material of the heating component 21 includes, but is not limited to, mica board, polyimide (PI), silicone and other high-temperature resistant insulating materials.

[0113] Preferably, the heating element 21 is configured as three annular regions along the radial direction of the target wafer, which are respectively referred to as the outer peripheral region, the middle region and the central region.

[0114] The width of the heating wire of the heating element 21 in the outer peripheral region is set to 4.5 to 5.5 mm, such as 4.5 mm, 4.6 mm, 4.7 mm, 4.8 mm, 4.9 mm, 5 mm, 5.1 mm, 5.2 mm, 5.3 mm, 5.4 mm, 5.5 mm, etc.; the spacing between adjacent heating wires is set to 2.5 to 3.5 mm, such as 2.5 mm, 2.6 mm, 2.7 mm, 2.8 mm, 2.9 mm, 3 mm, 3.1 mm, 3.2 mm, 3.3 mm, 3.4 mm, 3.5 mm, etc.

[0115] The heating wire width of the heating component 21 in the middle region is set to 3-4 mm, for example, 3 mm, 3.1 mm, 3.2 mm, 3.3 mm, 3.4 mm, 3.5 mm, 3.6 mm, 3.7 mm, 3.8 mm, 3.9 mm, 4 mm, etc.; the spacing between adjacent heating wires is set to 4-5 mm, for example, 4 mm, 4.1 mm, 4.2 mm, 4.3 mm, 4.4 mm, 4.5 mm, 4.6 mm, 4.7 mm, 4.8 mm, 4.9 mm, 5 mm, etc.

[0116] The heating wire width of the heating component 21 in the center region is set to 2-3 mm, for example, 2 mm, 2.1 mm, 2.2 mm, 2.3 mm, 2.4 mm, 2.5 mm, 2.6 mm, 2.7 mm, 2.8 mm, 2.9 mm, 3 mm, etc.; the spacing between adjacent heating wires is set to 5.5-6.5 mm, for example, 5.5 mm, 5.6 mm, 5.7 mm, 5.8 mm, 5.9 mm, 6 mm, 6.1 mm, 6.2 mm, 6.3 mm, 6.4 mm, 6.5 mm, etc.

[0117] By setting this structure, the heating temperature uniformity of the heating component 21 can be effectively improved, the high heating efficiency is ensured, and the actual heating temperature precision range is ensured to be within ±0.5℃, and the dimensional deviation of each position on the target wafer is within ±0.5℃.

[0118] Further, the coiled arrangement density and the bearing size H of the bearing 10 c Relatedly, the bearing size H of the bearing 10 c is the size of the bearing 10 in the direction of the heating component towards the target wafer. The heating wire width and the spacing between adjacent heating wires of the heating component 21 are adjusted according to the bearing size H of the bearing 10 c , that is, the thicker the bearing 10, the smaller the difference in heating wire width and spacing between regions. c

[0119] Referring to Figure 10 and Figure 11 , in some embodiments, the bearing size H of the bearing 10 c satisfies the relationship formula, 10 mm≤H c ≤30 mm, for example, the bearing size H of the bearing 10 c is set to 10 mm, 11 mm, 12 mm, 13 mm, 14 mm, 15 mm, 16 mm, 17 mm, 18 mm, 19 mm, 20 mm, 21 mm, 22 mm, 23 mm, 24 mm, 25 mm, 26 mm, 27 mm, 28 mm, 29 mm, 30 mm, etc. ​

[0120] The carrying size H of the carrying member 10 c The carrying size H of the carrying member 10 c If the carrying size H of the carrying member 10 is too small, less than 10mm, it is difficult to effectively ensure the precision and temperature uniformity. c The carrying size H of the carrying member 10 c If the carrying size H of the carrying member 10 is too large, greater than 30mm, it will affect the heat conduction effect. c The carrying size H of the carrying member 10 is set to 10 to 30mm, which can balance the good heat conduction effect and ensure the good precision and temperature uniformity.

[0121] The carrying size H of the carrying member 10 c is related to the preset parameter range. The preset parameter range includes the precision range of the carrying surface 11 and the temperature uniformity range of the target wafer. The carrying surface 11 is the surface of the carrying member 10 that contacts the target wafer. The precision of the carrying surface 11 is the flatness precision. The higher the flatness precision requirement is, the higher the temperature uniformity requirement is, and the larger the carrying size H of the carrying member 10 is set. c

[0122] In order to ensure that the external interference is small in the wafer electrical performance test, the surface resistivity of the carrying member 10 is as small as possible. Referring to Figure 11 , in some embodiments, the carrying surface 11 of the carrying member 10 is provided with an anti-interference coating 115. The anti-interference coating 115 is used to shield external interference. The carrying surface 11 is the surface of the carrying member 10 that contacts the target wafer.

[0123] By setting the anti-interference coating 115, the surface resistivity of the carrying member 10 can be effectively reduced. Preferably, the anti-interference coating 115 is set to a gold plating layer or a nickel plating layer. Preferably, the nickel plating layer is used, and the gold plating layer is generally used in the case where the resistivity requirement is very low.

[0124] Preferably, the carrying member 10 is subjected to special heat treatment to ensure that the flatness of the carrying member 10 is within 10 microns under high-temperature and normal-temperature conditions. How to heat treat belongs to the prior art and will not be described here.

[0125] In view of the requirement of the target wafer for the temperature precision range, in order to ensure that the actual temperature value of the target wafer is equal to the preset temperature value, to ensure good heating effect and high heating efficiency, referring to Figure 2 and Figure 13 , the wafer tester described in the present application, in some embodiments, further includes a temperature sensor 51, a compensation calculator 60 and a controller 70.

[0126] ​The temperature sensor 51 is arranged on the carrier 10, and is used to detect a real-time temperature value of the target wafer. Preferably, the temperature sensor 51 is arranged as a thermocouple.

[0127] The compensation calculator 60 is electrically connected with the temperature sensor 51, and is used to compare the preset temperature value and the real-time temperature value, and output a compensation temperature value when the preset temperature value is not equal to the real-time temperature value.

[0128] The controller 70 is electrically connected with the compensation calculator 60 and the heating component 21 respectively, and is used to adjust the heating power of the heating component 21 according to the compensation temperature value, so as to make the real-time temperature value equal to the preset temperature value.

[0129] By arranging the temperature sensor 51, the compensation calculator 60 and the controller 70, the three components cooperate with each other to adjust the heating power of the heating component 21, accurately control the temperature, and ensure that the real-time temperature value of the target wafer is equal to the preset temperature value, so as to ensure good heating effect and high heating efficiency. In addition, the arrangement can also achieve the effects of energy saving and safety improvement.

[0130] When detecting the wafer, the target wafer needs to be fixed. By fixing the target wafer, firstly, high detection accuracy can be ensured, and it is ensured that the detection instrument, such as a probe, can accurately contact the target wafer. Secondly, the detection stability and consistency are ensured, and the target wafer is prevented from being damaged by displacement, vibration and other interference, and from being collided and scratched. Finally, the time wasted for adjusting the position of the target wafer is reduced, and the detection efficiency is improved.

[0131] Preferably, the wafer tester provided by the present application fixes the target wafer by means of negative pressure adsorption.

[0132] Specifically, as shown in Figure 10 and Figure 11 In some embodiments, the wafer tester provided by the present application is arranged with a plurality of adsorption grooves 111 on the bearing surface 11 of the carrier 10, the plurality of adsorption grooves 111 are arranged in sequence along the radial direction of the target wafer, and the groove bottom of each adsorption groove 111 is arranged with at least one adsorption hole 112.

[0133] The carrier 10 is arranged with an adsorption channel 12, the adsorption channel 12 is connected with the adsorption hole 112 respectively, and the adsorption channel 12 is configured to generate negative pressure to adsorb and fix the target wafer.

[0134] For example, the adsorption channel 12 is communicated with a negative pressure device through a negative pressure joint, so that the negative pressure is generated in the adsorption channel 12. Since the adsorption groove 111 is communicated with the adsorption channel 12 through the adsorption hole 112, a relatively closed space is formed between the adsorption groove 111 and the target wafer on the bearing surface 11 when the negative pressure is generated in the adsorption channel 12, so as to adsorb and fix the target wafer. After the detection is completed, the negative pressure device is stopped, and the target wafer can be separated from the bearing 10.

[0135] Preferably, the plurality of adsorption grooves 111 are arranged in an arc shape or a ring shape and concentrically arranged to realize the adsorption of the target wafer.

[0136] Preferably, at least some adjacent adsorption grooves 111 are communicated. For example, a communication groove is arranged on the bearing surface 11, and the extension direction of the communication groove is parallel to the radial direction of the target wafer, so as to realize the communication of the adjacent adsorption grooves 111.

[0137] By arranging the communication groove to communicate the adjacent adsorption grooves 111, the problem that the corresponding adsorption groove 111 cannot realize the negative pressure adsorption after the adsorption hole 112 in part of the adsorption grooves 111 is blocked can be effectively prevented, and the reliability of the adsorption and fixation is effectively ensured.

[0138] Referring to Figure 12 As shown in the figure, in some embodiments, the wafer tester provided by the application is provided with a plurality of ring-shaped air suction groups 113 on the bearing surface 11 of the bearing 10, and the plurality of ring-shaped air suction groups 113 are arranged in sequence along the radial direction of the target wafer. Each ring-shaped air suction group 113 is provided with a plurality of air suction holes 114, and the plurality of air suction holes 114 are arranged in sequence along the circumferential direction of the target wafer.

[0139] The bearing 10 is provided with an adsorption channel 12, and the adsorption channel 12 is communicated with the air suction hole 114, respectively. The adsorption channel 12 is configured to generate negative pressure to adsorb and fix the target wafer.

[0140] For example, the adsorption channel 12 is communicated with a negative pressure device through a negative pressure joint, so that the negative pressure is generated in the adsorption channel 12. At this time, a relatively closed space is formed between the air suction hole 114 communicated with the adsorption channel 12 and the target wafer on the bearing surface 11, so as to adsorb and fix the target wafer. After the detection is completed, the negative pressure device is stopped, and the target wafer can be separated from the bearing 10.

[0141] Preferably, the diameter D of the air suction hole 114 is k 0.2-0.6mm. For example, 0.2mm, 0.25mm, 0.3mm, 0.35mm, 0.4mm, 0.45mm, 0.5mm, 0.55mm, 0.6mm, etc.

[0142] When the target wafer is thin, especially less than 200 microns, the small-diameter adsorption hole 114 is preferred for adsorption.

[0143] The diameter of the adsorption hole 114 cannot be too small. When the diameter of the adsorption hole 114 is less than 0.2 mm, the processing difficulty of the adsorption hole 114 increases, which not only makes the production cost high, but also affects the adsorption and fixing effect.

[0144] The diameter of the adsorption hole 114 cannot be too large. When the diameter of the adsorption hole 114 is greater than 0.6 mm, the flatness of the target wafer is affected when the target wafer is thin, especially less than 200 microns.

[0145] When the diameter of the adsorption hole 114 is set to 0.2-0.6 mm, the adsorption and fixing effect is good, and the target wafer is not easily affected.

[0146] Preferably, the hole spacing L between the two adjacent adsorption holes 114 is 5-8 mm. k The hole spacing between the two adjacent adsorption holes 114 is calculated based on the center points of the two adsorption holes 114. For example, the hole spacing between the two adjacent adsorption holes 114 is set to 5 mm, 5.5 mm, 6 mm, 6.5 mm, 7 mm, 7.5 mm, 8 mm, etc.

[0147] The hole spacing between the two adjacent adsorption holes 114 cannot be too small. When the diameter and the area of the bearing surface 11 are consistent, the smaller the hole spacing, the more adsorption holes 114 need to be set. In the case of a large number of adsorption holes 114, it is difficult to ensure the flatness of the wafer.

[0148] The hole spacing between the two adjacent adsorption holes 114 cannot be too large. When the diameter and the area of the bearing surface 11 are consistent, the larger the hole spacing, the fewer adsorption holes 114 need to be set. In the case of a small number of adsorption holes 114, it is difficult to ensure the adsorption and fixing effect.

[0149] When the hole spacing is set to 5-8 mm, the flatness of the wafer and the adsorption and fixing effect can be well balanced.

[0150] The application also provides a wafer testing device, which comprises a testing instrument, a driving device, and a wafer tester as described in any one of the above embodiments.

[0151] The driving end of the driving device is connected with the first mounting support 311. In use, the corresponding driving is realized by the driving device to cooperate with the testing instrument to realize wafer detection. Those skilled in the art can set the corresponding driving device according to the actual needs, such as a three-axis driver.

[0152] The wafer testing device has the beneficial effects of the wafer tester, and the wafer testing device also has all the beneficial effects, which will not be repeated here.

[0153] Referring to Figure 13 The wafer testing device also includes the precision collector 52 in some embodiments.

[0154] The precision collector 52 is configured to detect the real-time motion error value of the target wafer. The compensation calculator 60 is electrically connected to the precision collector 52, and the compensation calculator 60 is configured to calculate the corresponding motion compensation value according to the real-time motion error value. The controller 70 is electrically connected to the compensation calculator 60 and the driving device respectively, and the controller 70 is configured to adjust the driving parameter of the driving device according to the motion compensation value, so that the real-time motion error value is not greater than the preset error value. How to adjust the driving parameter of the driving device is prior art, and will not be repeated here.

[0155] In the process of wafer detection, the flatness of the target wafer needs to be ensured within 10 microns. Due to thermal expansion and contraction, the deformation of the carrier 10 is different under different temperature conditions. Therefore, it is necessary to compensate the flatness of the carrier 10 in real time under different temperature conditions.

[0156] By setting the precision collector 52, the adjustment of the driving device can be realized in cooperation with the compensation calculator 60 and the controller 70, so as to ensure that the flatness of the target wafer is within the required range under any temperature condition, thereby improving the detection precision.

[0157] Working principle:

[0158] Before starting detection, check and adjust the corresponding components, such as the second heat insulation member 3112 and the leveling member.

[0159] After the adjustment is completed, the target wafer is set on the carrier 10, and the negative pressure device is started to generate negative pressure in the adsorption channel 12 and the corresponding hole, so as to adsorb and fix the target wafer.

[0160] Then, the heating component 21 is started to heat the heating component 21 and conduct heat to the carrier 10, so as to finally heat the target wafer.

[0161] During the heating process, the temperature sensor 51, the compensation calculator 60 and the controller 70 cooperate with each other to adjust the heating power of the heating component 21, accurately control the temperature, and ensure that the actual temperature value of the target wafer is equal to the preset temperature value, so as to ensure good heating effect and high heating efficiency. The precision collector 52, the compensation calculator 60 and the controller 70 cooperate with each other to ensure the flatness of the target wafer, thereby improving the detection precision.

[0162] In addition, the first heat insulation member 41, the second heat insulation member 3112 and other components cooperate to reduce the heat loss of the heating component 21 to the driving device side, thereby achieving heat insulation, avoiding the influence of high temperature on other devices, and improving the heating efficiency.

[0163] After being heated to a temperature, the target wafer is tested by a testing instrument. During the testing process, the first insulating shielding member 22 and the second insulating shielding member 32 cooperate to shield electromagnetic interference, thereby improving the testing precision. In addition, the first heat insulation member 31, the second heat insulation member 112 and other components cooperate to reduce the adverse effects such as vibration and deformation, thereby improving the stability of the device and ensuring high testing precision.

[0164] It should be noted that the term "comprising" and its variants used in the embodiments of the present application are open and inclusive, i.e., "including but not limited to". The term "based on" is "at least partially based on". The term "one embodiment" means "at least one embodiment"; the term "another embodiment" means "at least one additional embodiment"; the term "some embodiments" means "at least some embodiments". The modification of "one", "multiple" mentioned in the embodiments of the present application is illustrative and not restrictive, and those skilled in the art should understand that, unless otherwise explicitly indicated in the context, it should be understood as "one or more".

[0165] The user information (including but not limited to user equipment information, user personal information, etc.) and data (including but not limited to data for analysis, stored data, displayed data, etc.) involved in the embodiments of the present application are all information and data authorized by the user or authorized by all parties, and corresponding operation entrances are provided for the user to choose authorization or rejection.

[0166] The various steps described in the method embodiments provided by the embodiments of the present application can be executed in different orders and / or in parallel. In addition, the method embodiments can include additional steps and / or omit the execution of the steps shown. The scope of protection of the present application is not limited in this respect.

[0167] The word "embodiment" in the specification means that the specific features, structures or characteristics described in conjunction with the embodiments can be included in at least one embodiment of the present application. The presence of this phrase in various places in the specification does not necessarily mean the same embodiment, nor does it mean independence or choice from other embodiments. Each embodiment in the specification is described in a relevant manner, and the same or similar parts between each embodiment are cross-referenced. In particular, for device, equipment, system embodiments, since they are basically similar to method embodiments, the description is relatively simple, and the relevant parts are referred to the part of the method embodiment.

[0168] The above embodiments only express several implementation manners of the present application, and the description is more specific and detailed, but it should not be understood as a limitation to the protection scope. It should be noted that for ordinary skilled persons in the art, several modifications and improvements can be made without departing from the concept of the present application, which all belong to the protection scope of the present application. Therefore, the protection scope of the present application should be subject to the appended claims.

Claims

1. A wafer tester, comprising: The utility model relates to a wafer testing device, which comprises: a carrier for setting a target wafer; a heating assembly connected to the carrier, the heating assembly comprising a heating component and a first insulation shield disposed outside the heating component, the first insulation shield being used to shield a first electromagnetic interference, which is electromagnetic interference of the heating component on the target wafer; and a mounting assembly connected to the heating assembly, the mounting assembly comprising a mounting seat configured to be connected to a driving device and a second insulation shield disposed between the mounting seat and the heating assembly, the second insulation shield being used to shield a second electromagnetic interference, which is electromagnetic interference of the driving device on the target wafer. The mounting seat comprises a first mounting support configured to be connected to the driving device and a second mounting support disposed on the second insulation shield and connected to the heating assembly. The first mounting support is provided with a mounting through hole and a plurality of limiting holes arranged in sequence along the circumference of the target wafer, each of the limiting holes being provided with a second thermal insulation member, and the second mounting support is provided with a plurality of leveling holes arranged in sequence along the circumference of the target wafer, each of the leveling holes being provided with a first leveling member configured to be movable and then fixed relative to the leveling hole, and the first leveling member is provided with a first leveling portion. The mounting through hole is movably provided with a second leveling member, and the second leveling member is provided with a second leveling portion corresponding to the first leveling portion and abutting against the first leveling portion.

2. The wafer testing device according to claim 1, wherein: the first insulation shield comprises a first insulation component connected to the mounting assembly, a second insulation component connected to the carrier, and a first electromagnetic shielding component disposed between the second insulation component and the heating component and grounded.

3. The wafer tester of claim 2, wherein, The first insulation shield further comprises: a first grounding component comprising a grounding contact portion and a grounding connection portion connected in series, the grounding contact portion being disposed between the first electromagnetic shielding component and the second insulation component, the grounding contact portion being in a square shape structure, and the center of the grounding contact portion being provided with an opening, and the grounding connection portion being grounded.

4. The wafer tester of claim 1, wherein, Further comprising: a plurality of first thermal insulation members disposed between the first insulation shield and the second insulation shield, the first thermal insulation members being connected to the first insulation shield and the second insulation shield respectively, and used to reduce the heat conduction area between the heating assembly and the mounting assembly through the first thermal insulation members.

5. The wafer tester according to claim 4, characterized in that: the first heat insulation member is provided in a cylindrical structure, and a fastener is arranged in the first heat insulation member, the fastener comprising a head portion and a connecting portion; the head portion is arranged on a side of the mounting seat away from the carrier, a spring pad is arranged between the head portion and the mounting seat, and two wedge-shaped gaskets are arranged between the spring pad and the mounting seat; the connecting portion is connected with the carrier, and an insulating layer is arranged on at least part of the connecting portion.

6. The wafer tester according to claim 1, characterized in that: the second insulating shield comprises a third insulating component and a second electromagnetic shielding component, the third insulating component is arranged on the mounting seat, and the second electromagnetic shielding component is arranged on the third insulating component; the second electromagnetic shielding component is grounded, and the second electromagnetic shielding component is connected with the heating assembly.

7. The wafer tester according to claim 1, characterized in that: an anti-interference coating is arranged on a bearing surface of the carrier, the anti-interference coating is used for shielding external interference, and the bearing surface is a surface of the carrier that contacts the target wafer.

8. A wafer testing apparatus, characterized by comprising: The wafer tester comprises a driving device, a precision collector, a compensation calculator, a controller, and the wafer tester according to any one of claims 1 to 7; a driving end of the driving device is connected with the mounting seat; the precision collector is used for detecting a real-time motion error value of the target wafer; the compensation calculator is electrically connected with the precision collector, and the compensation calculator is used for calculating a corresponding motion compensation value according to the real-time motion error value; the controller is electrically connected with the compensation calculator and the driving device respectively, and the controller is used for adjusting a driving parameter of the driving device according to the motion compensation value, so that the real-time motion error value is not greater than a preset error value.

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