Method, Electronic Device, and Storage Medium for Ion Implantation Simulation

Abstract

Embodiments of the present disclosure relate to a method, an electronic device, and a storage medium for ion implantation simulation. The method includes: determining a surface grid of a meshed semiconductor device to be ion implanted; projecting the surface grid onto a projection plane above the highest point in the surface grid in a direction opposite to the ion incident direction to form a projected surface structure in the projection plane; generating a plurality of quasi-incident points within the projected surface structure; and mapping the plurality of quasi-incident points to the surface grid along the ion incident direction to form a plurality of incident points located at the surface grid. The technical solution of the present disclosure can obtain correct incident points in a simple manner, significantly improving the calculation efficiency.

Description

Technical Field

[0001] Embodiments of the present disclosure mainly relate to semiconductor devices, and more particularly, to methods, electronic devices, and storage media for ion implantation simulation. Background Art

[0002] Ion implantation is the most commonly used means to introduce doping in the semiconductor manufacturing process. By ion implantation, impurity atoms can be implanted into the semiconductor interior, which is the basis for the operation of semiconductor devices.

[0003] In semiconductor process simulation, in addition to building different device structures with different materials, it is necessary to form different impurity distributions inside the devices, which can usually be accomplished through ion implantation and diffusion simulations. Ion implantation simulation introduces impurity atoms into the device interior, and diffusion simulation activates the atoms and causes them to diffuse. The combination of the two controls the doping concentration and the junction depth.

[0004] The injection object of ion implantation simulation is a semiconductor device. A series of incident points need to be calculated on the device surface, and the corresponding incident ray structures and intermediate parameters are calculated based on the incident points. In traditional solutions, complex processing is required for inclined surfaces, curved surfaces, or more complex surfaces, which usually involves more advanced geometric modeling and calculations, resulting in low efficiency. Summary of the Invention

[0005] According to an exemplary embodiment of the present disclosure, a solution for ion implantation simulation is provided to at least partially overcome the above or other potential defects.

[0006] According to one aspect of the present disclosure, a method for ion implantation simulation is provided. The method includes: determining a surface grid of a meshed semiconductor device to be ion implanted; projecting the surface grid in a direction opposite to the ion incident direction onto a projection plane above the highest point in the surface grid to form a projection surface structure in the projection plane; generating a plurality of candidate incident points in the projection surface structure; and mapping the plurality of candidate incident points in the ion incident direction to the surface grid respectively to form a plurality of incident points located at the surface grid.

[0007] In a second aspect of the present disclosure, an electronic device is provided. The electronic device includes a processor; and a memory coupled to the processor, the memory having instructions stored therein that, when executed by the processor, cause the device to perform operations, the operations including determining a surface grid of a meshed semiconductor device to be ion implanted; projecting the surface grid in a direction opposite to the ion incident direction onto a projection plane above the highest point in the surface grid to form a projection surface structure in the projection plane; generating a plurality of candidate incident points in the projection surface structure; and mapping the plurality of candidate incident points in the ion incident direction to the surface grid respectively to form a plurality of incident points located at the surface grid.

[0008] In some embodiments, determining the surface grids of a meshed semiconductor device to be ion-implanted includes: traversing the attributes of all grids of the meshed semiconductor device, and determining the grids whose attributes contain both air and other materials as surface grids.

[0009] In some embodiments, generating a plurality of entry points within a projected surface structure includes: uniformly generating a plurality of entry points within the projected surface structure; or generating a plurality of entry points based on the grid density of the surface grids.

[0010] In some embodiments, the surface grids include line segments, and uniformly generating a plurality of entry points within the projected surface structure includes: determining the projected line segments formed by projecting the line segments in the projected surface structure; uniformly dividing the projected line segments into a plurality of sub-line segments; and taking the midpoint of each sub-line segment as an entry point.

[0011] In some embodiments, the surface grids include planes and / or curved surfaces, and uniformly generating a plurality of entry points within the projected surface structure includes: determining the projected planes formed by projecting the planes and / or curved surfaces in the projected surface structure; uniformly dividing the projected planes into a plurality of sub-rectangles; and taking the center points of each sub-rectangle as entry points respectively.

[0012] In some embodiments, generating a plurality of entry points based on the grid density of the surface grids includes: generating a plurality of entry points in positive correlation with the density of the grids.

[0013] In some embodiments, mapping the plurality of entry points to the surface grids along the ion incidence direction to form a plurality of incidence points located at the surface grids includes: constructing an incident ray along the ion incidence direction with each entry point as an end point, and taking the intersection point of the incident ray and the surface grid as the incidence point.

[0014] In some embodiments, the operation further includes: in response to determining that an entry point in the projected plane corresponds to the incidence points of more than two basic structures in the surface grid, eliminating the incidence points of the basic structures below the more than two basic structures, where the basic structures include line segments and / or planes.

[0015] In a third aspect of the present disclosure, a computer-readable storage medium is provided, on which a computer program is stored, and when the program is executed by a processor, the method according to the first aspect of the present disclosure is implemented.

[0016] It will be understood from the following description that the technical solution of the present disclosure can obtain correct incidence points in a simple manner, significantly improving the calculation efficiency.

[0017] The Summary of the Invention section is provided to introduce, in a simplified form, a selection of concepts that will be further described in the detailed description below. The Summary of the Invention section is not intended to identify key or essential features of the present disclosure, nor is it intended to limit the scope of the present disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 A schematic diagram of an example environment in which embodiments of the present disclosure can be implemented is presented;

[0019] Figure 2 A flowchart of a method for ion implantation simulation according to some embodiments of the present disclosure is shown;

[0020] Figure 3 A schematic diagram of the surface of a semiconductor device according to some embodiments of the present disclosure is shown;

[0021] Figure 4 A schematic diagram of a grid cell of a 3D semiconductor device according to some embodiments of the present disclosure is shown;

[0022] Figure 5 A schematic diagram of determining the incident point of a surface grid through a projection plane according to some embodiments of the present disclosure is shown; and

[0023] Figure 6 A block diagram of a computing device capable of implementing multiple embodiments of the present disclosure is shown.

[0024] In the various drawings, the same or corresponding reference numerals denote the same or corresponding parts. DETAILED DESCRIPTION

[0025] The principles of the present disclosure will be described below with reference to various exemplary embodiments shown in the drawings. It should be understood that the description of these embodiments is only for enabling those skilled in the art to better understand and further implement the present disclosure, and is not intended to limit the scope of the present disclosure in any way. It should be noted that, where feasible, similar or identical reference numerals may be used in the figures, and similar or identical reference numerals may represent similar or identical functions. Those skilled in the art will readily recognize that alternative embodiments of the structures and methods described herein can be employed without departing from the principles of the present invention described herein.

[0026] As used herein, the term "comprising" and its variations denote open-ended inclusion, i.e., "including but not limited to". Unless otherwise specified, the term "or" means "and / or". The term "based on" means "at least partially based on". The terms "an example embodiment" and "an embodiment" mean "at least one example embodiment". The term "another embodiment" means "at least one additional embodiment". The terms "first", "second", etc. may refer to different or the same objects.

[0027] Ion implantation is an important process in semiconductor manufacturing and plays a key role. Ion implantation simulation is a technology for simulating and analyzing this process, which can optimize the design, reduce defects, improve efficiency, control costs, and accelerate the development of new processes.

[0028] Analytical ion implantation simulation is a fast and efficient method using mathematical models and methods to analyze and predict the ion implantation process, which is crucial for the design of semiconductor devices. Obtaining the incident point is a basic step in ion implantation simulation. The commonly used method in the industry is to perform horizontal and vertical bisections on the device surface until the incident point interval is less than a predetermined threshold. This method can obtain the incident point, but more complex processing is required for inclined surfaces, curved surfaces, or more complex surfaces, which usually involves more advanced geometric modeling and calculations to ensure the accurate acquisition of the incident point. For example, using more advanced geometric processing algorithms, such as adaptive mesh refinement technology, to adapt to the shape and inclination of complex surfaces. However, the computational complexity of these algorithms is high, resulting in low efficiency.

[0029] In addition, the scheme for calculating the incident point based on the bisection of the structural surface needs to distinguish the surface into a horizontal plane and a vertical plane when dealing with complex surfaces. The processing method for inclined surfaces or curved surfaces is not direct and is rather difficult. Especially when facing structures with irregular shapes, it is easy to produce calculation errors of the incident point. The convergence rate of the bisection method is only the same as a geometric series with a ratio of 1 / 2, which means that each iteration can only halve the search interval, resulting in a relatively large number of iterations being required to reach the desired accuracy when searching for the incident point. During the ion implantation process, the ion implantation rays are blocked by some edges in the device structure and cannot reach the bottom layer, resulting in the shadowing effect. The shadowing effect will cause deviations in critical dimensions (CD) and the translation of patterns. If the shadowing effect is considered, it is relatively difficult to determine which incident points should be retained.

[0030] In view of this, the present disclosure provides an improved solution.

[0031] Embodiments of the present disclosure provide an improved method for ion implantation simulation. The method includes: determining a surface grid of a meshed semiconductor device to be ion implanted; projecting the surface grid in a direction opposite to the ion incident direction onto a projection plane above the highest point in the surface grid to form a projected surface structure in the projection plane; generating a plurality of quasi-incident points within the projected surface structure; and mapping the plurality of quasi-incident points along the ion incident direction to the surface grid respectively to form a plurality of incident points located at the surface grid. Through the solution of the embodiments of the present disclosure, correct incident points can be obtained in a simple manner, significantly improving the calculation efficiency.

[0032] Embodiments of the present disclosure will be specifically described below with reference to the accompanying drawings.

[0033] Figure 1 A schematic diagram of an example environment 100 in which embodiments of the present disclosure can be implemented is shown. As Figure 1 shown, the example environment 100 includes a computing device 110 and a client 120.

[0034] In some embodiments, the computing device 110 can interact with the client 120. For example, the computing device 110 can receive an input message from the client 120 and output a feedback message to the client 120. In some embodiments, the input message from the client 120 can be data related to a semiconductor device. The computing device 110 can perform corresponding mathematical operations on the data related to the semiconductor device and output the corresponding operation results to the client 120.

[0035] In some embodiments, the computing device 110 can include, but is not limited to, a personal computer, a server computer, a handheld or laptop device, a mobile device (such as a mobile phone, a personal digital assistant PDA, a media player, etc.), a consumer electronic product, a minicomputer, a mainframe computer, cloud computing resources, etc.

[0036] It should be understood that describing the structure and function of the example environment 100 only for exemplary purposes is not intended to limit the scope of the subject matter described herein. The subject matter described herein can be implemented in different structures and / or functions. This environment is merely illustrative and not used to limit the application environment of the embodiments of the present disclosure.

[0037] To more clearly explain the principle of the solution of the present disclosure, the following will be described in more detail with reference to Figure 2 .

[0038] Figure 2 A flowchart of a method 200 for ion implantation simulation according to some embodiments of the present disclosure is shown.

[0039] At block 202, the surface grid of the meshed semiconductor device to be ion-implanted is determined. The semiconductor device being simulated is referred to as the simulation structure. In simulation software, the semiconductor device is meshed, so it can be said that the simulation structure is composed of grids. The grids can be classified into internal grids and surface grids according to different attributes. The outer surface of the simulation structure is the surface grid. To perform ion-implantation simulation, the surface grid of the simulation structure, that is, the surface area to be ion-implanted, needs to be obtained first. For a two-dimensional structure, the surface grid is a series of line segments and curves. For a three-dimensional structure, the surface grid is a series of planes or curved surfaces. Strictly speaking, the surface grid of a two-dimensional structure is composed of a series of line segments that are connected end to end. Even curves are composed of a series of short line segments connected end to end. Therefore, the projection plane of a two-dimensional structure is always a straight line, and the projection plane of a three-dimensional structure is always a plane.

[0040] See Figure 3 , Figure 3 shows a schematic diagram of the surface of a semiconductor device according to some embodiments of the present disclosure. This figure is a front view of a three-dimensional semiconductor device 302 (which can also be regarded as a front view of a two-dimensional device). The upper part of the semiconductor device 302, the area represented by 304 (two top surface parts and the right side surface connecting the two top surface parts), is the surface grid to be ion-implanted.

[0041] See Figure 4 , Figure 4 shows a schematic diagram of the surface grid of a 3D semiconductor device 402 according to some embodiments of the present disclosure. The surface grid shown in the figure is the grid in a normal simulation body structure.

[0042] The concepts of two-dimensional and three-dimensional mentioned here are based on the dimensions of the structure constructed during the process simulation of computer-aided design (Technology Computer-Aided Design, abbreviated as TCAD) software. TCAD simulation software can simulate semiconductor process flows from one-dimensional to three-dimensional. Common two-dimensional simulation means that the simulation structure only has two dimensions, X and Y, and is commonly used in planar device simulation because planar devices are uniform in the direction perpendicular to the plane formed by X and Y. Using two-dimensional simulation not only does not lose simulation accuracy but also improves simulation efficiency. A three-dimensional structure means that the TCAD simulation structure has three dimensions, X, Y, and Z, which is consistent with the actual wafer structure and is often used to simulate, for example, three-dimensional devices such as fin field-effect transistors (Fin Field-Effect Transistor, abbreviated as FinFET).

[0043] Generally, planar devices above 28 nm can use 2D simulation due to structural symmetry. 14 nm FinFET devices and 7 nm gate-all-around (Gate All Around, abbreviated as GAA) devices usually use 3D simulation.

[0044] The data structures of the mesh can all be stored in the simulation software, and the relevant data structures can be called during the simulation to implement the simulation of semiconductor devices.

[0045] In some embodiments, the surface mesh can be obtained by a commonly used method in the industry, and no detailed description will be given here.

[0046] In Technology Computer-Aided Design (TCAD) simulation, there is air material above the structure. Therefore, in some embodiments, the surface mesh can be obtained by traversing the attributes of all meshes in the structure. Specifically, in some embodiments, the meshes simultaneously occupied by air material and any other material are determined as the surface mesh. In other words, traverse the attributes of all meshes of the meshed semiconductor device, and determine the meshes that contain both air and other materials in the attributes as the surface mesh.

[0047] In some embodiments, the surface mesh can be obtained by the normal vector calculation method. Specifically, calculate the boundary of the surface and its normal vector. The surface boundary refers to the boundary of the exposed surface above, which is also the exposed surface above the simulation structure; calculate the angle between the normal vector and the incident direction. If the angle is greater than or equal to 90 degrees, this section of the boundary is the surface mesh.

[0048] At block 204, project the surface mesh in a direction opposite to the ion incident direction onto a projection plane above the highest point in the surface mesh to form a projected surface structure within the projection plane. Generally, the exposed surface of the simulation structure faces upward, and ion implantation is performed from above. The projection plane only needs to be taken at a position above the highest point of the original simulation structure, and any height is equivalent.

[0049] See below Figure 5 , Figure 5 shows a schematic diagram of determining the incident point of the surface mesh through the projection plane according to some embodiments of the present disclosure. Specifically, Figure 5 schematically shows the correspondence between the surface mesh and the projection plane according to the direction of the incident ray and the acquisition of the allowable incident point position, and at the same time shows the shadow effect.

[0050] Figure 5 The basic structure of the upper surface mesh part of the semiconductor device 502 in, that is, some line segments in the upper part are projected onto the upper projection plane (not shown in the figure). The line segments surrounded by each ellipse 504 are the surface meshes corresponding to the two-dimensional structure. Project the surface mesh in a direction opposite to the ion incident direction onto a projection plane above the highest point in the surface mesh to form a projected surface structure, that is, the structure where the points indicated by 510 are located. The projected surface structure is located in the projection plane.Figure 5 Taking the surface grid corresponding to the two-dimensional structure as an example for illustration. For the surface grid of the three-dimensional structure, the same processing can be performed.

[0051] In some embodiments, the horizontal plane corresponding to the highest point of the surface grid is taken as the projection plane, the surface grid is projected onto the projection plane along the incident direction, and the corresponding positions are associated. The association can be achieved by recording the positions on the structural surface corresponding to the grid positions on the projection plane.

[0052] Return to Figure 2 , at block 206, a plurality of admissible incident points are generated within the projected surface structure.

[0053] In some embodiments, the surface of the structure can be projected onto the projection plane to form a continuous line segment or a continuous and non-porous plane, the endpoints of the line segment or the boundaries of the plane are found, and the line segment formed by the endpoints or the plane formed by the boundaries is called the projected surface structure.

[0054] In some embodiments, a plurality of admissible incident points can be uniformly generated within the projected surface structure.

[0055] In some embodiments, a corresponding plurality of admissible incident points can be generated based on the grid density of the surface grid.

[0056] In some embodiments, the projected surface structure is uniformly divided into a series of sub-line segments or sub-rectangles, and the center point of each sub-line segment or sub-rectangle is taken as an admissible incident point. In this way, a set of admissible incident points is constructed. It should be understood that the embodiments of the present disclosure are not limited thereto. For example, in some embodiments, the center point may not be taken as the admissible incident point. Obviously, taking the center point is the simplest and most efficient processing method.

[0057] Refer again to Figure 5 , Figure 5 The admissible incident points in are represented by 512. As described above, each admissible incident point can be the center point of a sub-line segment or a sub-rectangle.

[0058] In some embodiments, generating a plurality of admissible incident points based on the grid density of the surface grid may include: generating a plurality of admissible incident points in positive correlation with the density of the grid. By positive correlation, it means that the two variables change in the same direction. When one variable changes from large to small or from small to large, the other variable also changes from large to small or from small to large. For this embodiment, the greater the density of the grid, the greater the number of admissible incident points. Being proportional is a special case of positive correlation.

[0059] In some embodiments, the surface grid includes line segments, and generating a plurality of admissible incident points uniformly within the projected surface structure may include: determining the projected line segments formed by the projection of the line segments in the projected surface structure; uniformly dividing the projected line segments into a plurality of sub-line segments; and taking the center point of each sub-line segment as an admissible incident point.

[0060] In some embodiments, the surface grid includes a plane and / or a curved surface, and a plurality of quasi-incident points can be uniformly generated within the projected surface structure by the following method: determining a projection plane formed by projecting the plane and / or the curved surface in the projected surface structure; uniformly dividing the projection plane into a plurality of sub-rectangles; and taking the center point of each sub-rectangle as a quasi-incident point respectively.

[0061] Taking the quasi-incident points at the middle positions of the respective divided regions (on line segments or sub-planes) can ensure the uniformity of the rays. In principle, they can be taken at any position, but the relative positions of the respective line segments need to be ensured to remain unchanged. Relatively speaking, selecting the center is the simplest and most direct way.

[0062] At block 208, a plurality of quasi-incident points are respectively mapped onto the surface grid along the ion incident direction to form a plurality of incident points located at the surface grid.

[0063] In some embodiments, the quasi-incident points of the projection plane can be mapped one by one onto the surface grid to form a set of incident points located on the surface of the structure. Specifically, in some embodiments, taking each quasi-incident point as an end point, an incident ray is constructed along the incident direction, and the intersection point of the incident ray and the surface grid is used as the incident point.

[0064] See again Figure 5 , the incident ray 514 points from the quasi-incident point to the surface grid, and each point represented by 506 on the surface grid is the incident point. The part circled by the dashed ellipse 516 and the points circled by the ellipse 504 that intersects the dashed ellipse 516 and whose major axis extends longitudinally represent the points related to the shadow effect. The quasi-incident points corresponding to these points on the projection plane are circled by the upper ellipse 508. The points related to the shadow effect indicate that the corresponding points in the projection plane are blocked by other parts, and they can be excluded. After exclusion, no incident points need to be set because in reality, incident ions cannot be incident on the corresponding positions of the surface grid, and not setting incident points at these positions is consistent with the reality. Therefore, in some embodiments, if the quasi-incident points of a projection plane correspond to the incident points of two basic structure surfaces, considering the shadow effect, the lower incident points are excluded. For example, if the quasi-incident points of a projection plane correspond to the incident points of more than two basic structure surfaces, all the lower incident points are excluded, and only the topmost point is retained. In other words, in the case where it is determined that a quasi-incident point in the projection plane corresponds to the incident points of more than two basic structures in the surface grid, the incident points of the lower basic structures among the more than two basic structures are excluded, where in some embodiments, the basic structure refers to a line segment and / or a plane.

[0065] In some embodiments, a plurality of candidate incident points are respectively mapped to a surface grid along the ion incident direction to form a plurality of incident points located at the surface grid. This can be achieved by the following method: taking each candidate incident point as an endpoint, constructing an incident ray along the ion incident direction, and the intersection point of the incident ray and the surface grid is the incident point.

[0066] As mentioned above, the structural surface is projected onto a projection plane along the incident direction, and the corresponding positions are associated. By "association", it means that the projection plane is corresponded to the surface grid, and incident points are set on the projection plane. Calculating the distribution of incident rays is performed for the simulation structure. The starting point of the incident ray in the simulation structure is the point in the corresponding surface grid, and the specific position is determined through the corresponding relationship. The specific position refers to the distribution of the incident rays in the simulation structure, and these distributions are determined by the incident points on the structural surface. By projecting the structural surface (surface grid), setting incident points on the projection plane, and then mapping them back to the surface grid, the distribution of the incident rays in the simulation structure is determined. The analytical ion implantation simulation essentially calculates the incident rays passing through the simulation structure.

[0067] In some embodiments of the present disclosure, after obtaining the surface grid, the surface grid is projected onto a projection plane; a series of candidate incident points are generated on the projection plane. Then the candidate incident points are mapped back to the surface grid. This is done at least for the following considerations: for example, for an irregular surface (such as a circular surface or other curved surfaces), it is difficult to directly divide or set incident points on it. However, after projecting it onto a plane, it is easy to generate candidate incident points uniformly or non-uniformly for the plane. Then projecting the candidate incident points back to the surface grid can generate incident points on the surface grid. This solution utilizes the characteristic that it is easy to process on the projection plane. In addition, the projection direction is along the ion incident direction, which ensures compliance with the actual ion incidence.

[0068] Some embodiments of the present disclosure provide a method for ion implantation simulation. It should be noted that the examples given in the above embodiments are only for illustrating the solutions of the embodiments of the present disclosure and do not limit the solutions of the present disclosure.

[0069] It should be understood that the embodiments shown in the drawings are only for schematically showing the solutions of some embodiments of the present disclosure and do not limit the present disclosure. The embodiments of the present disclosure can also have various other forms.

[0070] Embodiments of the present disclosure also disclose an electronic device. The electronic device includes: a processor; and a memory coupled to the processor, the memory having instructions stored therein that, when executed by the processor, cause the device to perform operations, the operations including: determining a surface grid of a meshed semiconductor device to be ion-implanted; projecting the surface grid in a direction opposite to the ion incidence direction onto a projection plane above the highest point in the surface grid to form a projected surface structure in the projection plane; generating a plurality of candidate incident points within the projected surface structure; and mapping the plurality of candidate incident points in the ion incidence direction to the surface grid respectively to form a plurality of incident points located at the surface grid.

[0071] In embodiments of the present disclosure, a projection method is adopted to uniformly transform a complex structural surface into a plane, making the calculation of incident points simpler and more efficient, very convenient for processing curved or inclined surfaces, and at the same time capable of accurately handling the shadow effect.

[0072] Embodiments of the present disclosure also disclose a computer-readable storage medium having a computer program stored thereon, and the program, when executed by a processor, implements a method for ion implantation simulation according to embodiments of the present disclosure.

[0073] In some embodiments of the present disclosure, the grid can be directly and uniformly divided on the projection plane, which can eliminate the iterative process and greatly improve the efficiency.

[0074] The present disclosure implements a relatively simple and efficient calculation scheme for obtaining incident points, and this scheme can be applied to two-dimensional or three-dimensional structures of any complexity.

[0075] Some embodiments of the present disclosure disclose a scheme for projecting the surface of a simulation structure onto a plane for processing to obtain incident points. The scheme of the embodiments of the present disclosure can not only bypass the processing of complex and variable surface structures, and only perform data processing on a simple projection plane to obtain correct incident points, but also has a higher calculation efficiency to achieve the same accuracy as the traditional method, and can simply handle the shadow effect.

[0076] Figure 6 A schematic block diagram of an electronic device according to some exemplary embodiments of the present disclosure is shown. The electronic device is intended to represent various forms of digital computers, such as, laptop computers, desktop computers, workstations, personal digital assistants, servers, blade servers, mainframe computers, and other suitable computers. The electronic device can also represent various forms of mobile devices, such as, personal digital processors, cellular phones, smart phones, wearable devices, and other similar computing devices. The components shown herein, their connections and relationships, and their functions are merely examples and are not intended to limit the implementation of the present disclosure described and / or claimed herein.

[0077] AsFigure 6 As shown, device 600 includes a CPU 601, which can perform various appropriate actions and processes according to a computer program stored in a read-only memory (ROM) 602 or a computer program loaded from a storage unit 608 into a random access memory (RAM) 603. In the RAM 603, various programs and data required for the operation of the device 600 can also be stored. The CPU 601, ROM 602, and RAM 603 are connected to each other via a bus 604. An input / output (I / O) interface 605 is also connected to the bus 604.

[0078] Multiple components in the device 600 are connected to the I / O interface 605. The multiple components include: an input unit 606, such as a keyboard, a mouse, etc.; an output unit 607, such as various types of displays, speakers, etc.; a storage unit 608, such as a magnetic disk, an optical disc, etc.; and a communication unit 609, such as a network card, a modem, a wireless communication transceiver, etc. The communication unit 609 allows the device 600 to exchange information / data with other devices via a computer network such as the Internet and / or various telecommunication networks.

[0079] Each of the processes and treatments described above, such as method 200, can be executed by the CPU 601. For example, in some embodiments, method 200 can be implemented as a computer software program, which is tangibly included in a machine-readable medium, such as the storage unit 608. In some embodiments, part or all of the computer program can be loaded and / or installed onto the device 600 via the ROM 602 and / or the communication unit 609. When the computer program is loaded into the RAM 603 and executed by the CPU 601, one or more steps of the method 200 described above can be executed.

[0080] The solution according to an embodiment of the present disclosure can be a method, an apparatus, a system, and / or a computer program product. The computer program product can include a computer-readable storage medium, on which computer-readable program instructions for executing various aspects of the present disclosure are loaded. The computer-readable storage medium can be a tangible device that can hold and store instructions used by an instruction execution device. The computer-readable program instructions can be downloaded from the computer-readable storage medium to various computing / processing devices, or downloaded to an external computer or an external storage device via a network, such as the Internet, a local area network, a wide area network, and / or a wireless network.

[0081] The embodiments of the present disclosure have been described above. The above description is exemplary and is only an alternative embodiment of the present disclosure, not exhaustive, and is not used to limit the present disclosure. Although the claims in this application have been formulated for specific combinations of features, it should be understood that the scope of the present disclosure also includes any novel feature or any novel combination of features that are explicit or implicit or any generalization thereof disclosed herein, regardless of whether it relates to the same solution in any of the currently claimed claims. The applicant hereby informs that new claims may be formulated for these features and / or combinations of these features during the examination process of this application or in any further application derived therefrom.

[0082] The choice of terms used herein is intended to best explain the principles of the embodiments, practical applications, or improvements to the technology in the market, or to enable other ordinary technicians in the technical field to understand the embodiments disclosed herein. For those skilled in the art, various changes and modifications can be made to the present disclosure. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present disclosure shall be included within the protection scope of the present disclosure.

Claims

1. A method for ion implantation simulation, comprising: Determining a surface grid of a meshed semiconductor device to be ion implanted; Projecting the surface grid in the opposite direction of the ion incident direction onto a projection plane above the highest point in the surface grid, so as to form a projected surface structure in the projection plane, wherein the exposed surface of the semiconductor device faces upward for ion implantation from above; Generating a plurality of quasi-incident points within the projected surface structure; And Mapping the plurality of quasi-incident points along the ion incident direction to the surface grid respectively to form a plurality of incident points located at the surface grid.

2. The method according to claim 1, wherein determining the surface grid of the meshed semiconductor device to be ion implanted comprises: Traversing the attributes of all grids of the meshed semiconductor device, and determining the grids whose attributes contain both air and other materials as the surface grid.

3. The method according to claim 1, wherein generating a plurality of quasi-incident points within the projected surface structure comprises: Uniformly generating a plurality of quasi-incident points within the projected surface structure; Or Generating a plurality of quasi-incident points based on the grid density of the surface grid.

4. The method according to claim 3, wherein the surface grid includes line segments, and wherein uniformly generating a plurality of quasi-incident points within the projected surface structure comprises: Determining the projected line segments formed by projecting the line segments in the projected surface structure; Uniformly dividing the projected line segments into a plurality of sub-line segments; And Taking the midpoint of each sub-line segment as a quasi-incident point.

5. The method according to claim 3, wherein the surface grid includes planes and / or curved surfaces, and wherein uniformly generating a plurality of quasi-incident points within the projected surface structure comprises: Determining the projected planes formed by projecting the planes and / or curved surfaces in the projected surface structure; Uniformly dividing the projected planes into a plurality of sub-rectangles; And Taking the center points of each sub-rectangle as a quasi-incident point respectively.

6. The method according to claim 3, wherein generating a plurality of quasi-incident points based on the grid density of the surface grid comprises: Generating the plurality of quasi-incident points in positive correlation with the grid density.

7. The method according to claim 1, wherein mapping the plurality of quasi-incident points along the ion incident direction to the surface grid respectively to form a plurality of incident points located at the surface grid comprises: Constructing incident rays along the ion incident direction with each quasi-incident point as an end point, and taking the intersection points of the incident rays and the surface grid as the incident points.

8. The method according to claim 1, wherein it further comprises: In response to determining that one quasi-incident point in the projection plane corresponds to incident points of two or more basic structures in the surface grid, eliminating the incident points of the basic structures below among the two or more basic structures, wherein the basic structures include line segments and / or planes.

9. An electronic device, comprising: A processor; And A memory coupled to the processor, the memory having instructions stored therein, and the instructions, when executed by the processor, cause the device to perform actions, the actions including: Determine the surface grid of the meshed semiconductor device to be ion-implanted; Project the surface grid in the opposite direction of the ion incidence direction onto a projection plane above the highest point in the surface grid to form a projected surface structure within the projection plane, wherein the exposed surface of the semiconductor device faces upward for ion implantation from above; Generate a plurality of access incident points within the projected surface structure; and Map the plurality of access incident points in the ion incidence direction to the surface grid respectively to form a plurality of incident points located at the surface grid.

10. A computer-readable storage medium having machine-executable instructions stored thereon, which when executed by a processor cause the processor to implement the method according to any one of claims 1 to 8.

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