High-power thin-film resistor and manufacturing method thereof

Abstract

A high-power thin-film resistor comprises a substrate, a resistance layer, an inner electrode layer, a passivation layer and a heat conduction layer. The resistance layer is arranged above the substrate, and the inner electrode layer is provided with a middle resistance region and two end resistance regions; the inner electrode layer is arranged above the resistance layer, the inner electrode layer is provided with a middle inner electrode area and two-end inner electrode areas, and the resistance layer is divided into a middle resistance area and two-end resistance areas; the passivation layer covers the resistive layer and the partial region of the inner electrode layer; the heat conduction layer is arranged above the passivation layer, the heat conduction layer is provided with two heat conductors and a gap between the two heat conductors, and the two heat conductors are in contact with the inner electrode areas at the two ends of the inner electrode layer respectively; wherein the middle resistor region and the resistor regions at the two ends form series resistors, and the resistor regions at the two ends have the same resistance value. Therefore, heat generated by the resistive layer can be uniformly dispersed in the whole high-power thin-film resistor, and most of the heat can be directly conducted to an external circuit from the inner electrode areas at the two ends of the inner electrode layer.

Description

Technical Field

[0001] The present disclosure relates to a resistor and a manufacturing method thereof, and in particular to a high-power thin-film resistor and a manufacturing method thereof. Background Art

[0002] The existing high-power thin-film resistor is to sputter a layer of alloy resistance film on the substrate, and form a pair of internal terminal electrodes at both ends by printing or electroplating, and then cover a layer of insulating protection layer on the alloy resistance film and part of the internal terminal electrode to prevent the alloy resistance film from being polluted or damaged by the environment. Finally, a pair of external electrodes for welding are formed by electroplating.

[0003] However, the aluminum nitride substrate or passivated aluminum substrate used in high-power thin film resistors has the problem of difficult adhesion of other alloy metal materials due to the surface tension of the material, resulting in the separation of the alloy resistor film from the substrate. In particular, when the power or temperature of the application is increased, the alloy resistor film is more likely to peel off due to thermal expansion and contraction. Summary of the invention

[0004] Therefore, the object of the present invention is to provide a high-power thin-film resistor, comprising: a substrate, a resistor layer, an internal electrode layer, a passivation layer and a thermal conductive layer. The resistor layer is arranged above the substrate, wherein the internal electrode layer has a middle resistor region and two end resistor regions; the internal electrode layer is arranged above the resistor layer, wherein the internal electrode layer has a middle internal electrode region and two end internal electrode regions, and the resistor layer is divided into a middle resistor region and two end resistor regions; the passivation layer covers the resistor layer and a part of the internal electrode layer; and the thermal conductive layer is arranged above the passivation layer, wherein the thermal conductive layer has two thermal conductors and a gap between the two thermal conductors, and the two thermal conductors contact the two end internal electrode regions of the internal electrode layer respectively; wherein the middle resistor region and the two end resistor regions form a series resistor, and the two end resistor regions have the same resistance value.

[0005] According to an embodiment of the present disclosure, each of the middle resistance region and the two end resistance regions includes a trimming region, wherein the trimming region is located below the area covered by the two heat conductors of the heat conductive layer.

[0006] According to an embodiment of the present disclosure, it further comprises: a back inner electrode layer disposed on the other side of the substrate opposite to the resistance layer.

[0007] According to an embodiment of the present disclosure, it further comprises: two connection layers, which are respectively disposed on two sides of the substrate and connect the back inner electrode layer, the inner electrode layer and the heat conducting layer on the two sides.

[0008] According to an embodiment of the present disclosure, it further comprises two external electrode layers having an external electrode heat-conducting layer, and the two external electrode layers respectively cover corresponding side walls of the heat-conducting layer and the internal electrode layer.

[0009] According to an embodiment of the present disclosure, each of the resistor regions at both sides is a double-bending pattern, and the double-bending pattern surrounds a corresponding one of the inner electrode regions at both ends.

[0010] Another object of the present invention is to provide a method for manufacturing a high-power thin-film resistor, comprising: depositing a resistor layer on top of a substrate; forming a patterned photoresist layer on top of the resistor layer; forming an internal electrode layer on top of the patterned photoresist layer; removing the patterned photoresist layer so that the internal electrode layer forms a middle internal electrode region and two end internal electrode regions, and exposes the middle resistor region and two end resistor regions of the resistor layer below, wherein the middle resistor region and the two end resistor regions form a series resistor, and the two end resistor regions have the same resistance value; forming a passivation layer on top of the resistor layer and a portion of the internal electrode layer; and forming a thermal conductive layer on top of the passivation layer, wherein the thermal conductive layer forms two thermal conductors and a gap between the two thermal conductors, and the two thermal conductors respectively contact the two end internal electrode regions of the internal electrode layer.

[0011] According to an embodiment of the present disclosure, it further includes: forming a trimming area in each of the middle resistance area and the two end resistance areas, wherein the trimming area is located below the area covered by the two heat conductors of the heat conductive layer.

[0012] According to an embodiment of the present disclosure, the method further includes forming a back inner electrode layer on the other side of the substrate opposite to the resistor layer.

[0013] According to an embodiment of the present disclosure, two external electrode layers are further formed, wherein the two external electrode layers have external electrode heat-conducting layers, and the two external electrode layers respectively cover the corresponding side walls of the heat-conducting layer and the two internal electrode layers. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] In order to make the above and other objects, features, advantages and embodiments of the present invention more understandable, the attached drawings are described as follows:

[0015] Figure 1A and Figure 1B The top view of each layer of the high power thin film resistor according to some embodiments of the present invention is shown along the Figure 1A A schematic cross-sectional view of a high-power thin-film resistor obtained by taking the line AA' shown in FIG.

[0016] Figure 2A A schematic top view of a resistor layer and an inner electrode layer of a high-power thin-film resistor according to some embodiments of the present invention;

[0017] Figure 2B A schematic diagram of equivalent resistance of a resistance layer of a high-power thin-film resistor according to some embodiments of the present invention;

[0018] Figure 3A top perspective view of a heat-conducting layer and a resistive layer of a high-power thin-film resistor according to some embodiments of the present invention;

[0019] Figure 4 A flowchart of a method for manufacturing a high-power thin-film resistor according to some embodiments of the present invention; and

[0020] FIG. 5A to FIG. 5M Draw the Figure 4 Schematic cross-sectional view of a high-power thin-film resistor manufactured by the manufacturing method at various manufacturing stages. DETAILED DESCRIPTION

[0021] The following disclosure provides many different embodiments or examples for implementing different features of the provided subject matter. The embodiments of the components and configurations described below are provided as examples only and are not intended to be limiting. For example, in the following description, a first feature is formed on or above a second feature, which may include an embodiment in which the first feature and the second feature are in direct contact, and may also include an embodiment in which an additional feature is formed between the first feature and the second feature so that the first feature and the second feature are not in direct contact. In addition, for the purpose of simplicity and clarity, the disclosure repeats reference symbols and / or numbers in various examples, which itself does not limit the relationship between the various embodiments and / or components discussed.

[0022] Secondly, in order to clearly present the technical features of this case, the dimensions (such as length, width, thickness and depth) of the elements (such as layers, films, substrates and regions, etc.) in the drawings are not drawn in proportion. Therefore, the description and explanation of the embodiments below are not limited to the dimensions and shapes presented by the elements in the drawings, but should cover the dimensions, shapes and deviations thereof caused by actual processes and / or tolerances. For example, the flat surfaces shown in the drawings may have rough and / or nonlinear features, while the acute angles shown in the drawings may be rounded. Therefore, the elements presented in the drawings of this case are mainly for illustration, and are not intended to accurately depict the actual shapes of the elements, nor are they intended to limit the claims of this case.

[0023] Please refer to Figure 1A and Figure 1B , Figure 1A and Figure 1B The top view of each layer of the high power thin film resistor 100 according to some embodiments of the present invention is shown. Figure 1A The high-power thin-film resistor 100 is a cross-sectional view obtained by taking the line AA' shown in FIG. The high-power thin-film resistor 100 includes a substrate 110, a resistor layer 120, an internal electrode layer 130, a passivation layer 140, a thermal conductive layer 150, a back-side internal electrode layer 160, a plurality of protective layers 170 (e.g., a first protective layer 170a and a second protective layer 170b), two connection layers 180, and two external electrodes 190.

[0024] like Figure 1B As shown, the resistor layer 120 is disposed above the substrate 110, the internal electrode layer 130 is disposed above the resistor layer 120, and includes internal electrode regions 130a and 130d at both ends and internal electrode regions 130b and 130c in the middle, the passivation layer 140 covers the resistor layer 120 and a portion of the internal electrode layer 130, and the thermal conductive layer 150 is disposed above the passivation layer 140 and contacts the internal electrode regions 130a and 130d at both ends of the internal electrode layer 130 below, so that the heat generated by the high-power thin-film resistor 100 can be directly conducted from the internal electrode regions 130a and 130d at both ends of the internal electrode layer 130 to the thermal conductive layer 150, and then the thermal conductive layer 150 conducts the heat to the connecting layer 180, the external electrode 190 and the external circuit or printed circuit board. In addition, portions of the surfaces of the thermal conductive layer 150 and the back inner electrode layer 160 are covered by the protective layer 170, and the two connecting layers 180 are respectively connected to the corresponding side walls of the substrate 110, the resistor layer 120, the inner electrode layer 130, the thermal conductive layer 150 and the back inner electrode layer 160 on both sides, and finally the two external electrodes 190 cover these layers from the outermost layer.

[0025] The material of the substrate 110 may be aluminum oxide, aluminum nitride, FR-4, polyimide (PI), silicon dioxide (SiO 2 ), etc., but the present invention is not limited thereto.

[0026] The resistance layer 120 can be adjusted by laser trimming or physical processing to obtain the desired target resistance. In this embodiment, the material of the resistance layer 120 can be copper-manganese alloy (MnCu), copper-nickel alloy (CuNi), copper-manganese-nickel alloy (CuMnNi), copper-manganese-tin alloy (CuMnSn), nickel-chromium-aluminum alloy (NiCrAl), nickel-chromium-aluminum-silicon alloy (NiCrAlSi), iron-chromium-aluminum alloy (FeCrAl), or other metal alloys, but the present invention is not limited thereto.

[0027] The passivation layer 140 can transform the metal surface into a state that is not easily oxidized, thereby delaying the corrosion rate of the metal, thereby protecting the underlying resistor layer 120 and the internal electrode layer 130. The material of the passivation layer 140 can be one or more layers of silicon dioxide (SiO2), silicon nitride (SiN), silicon oxynitride (SiON), tantalum oxide (Ta2O) or other insulating oxides, and the present invention is not limited thereto.

[0028] The heat-conducting layer 150 has two heat-conducting bodies 150a and 150b, and there is a gap 150c between the heat-conducting bodies 150a and 150b, so that the heat-conducting bodies 150a and 150b do not contact each other (i.e., they are disconnected and do not provide a conductive path). The heat-conducting layer 150 is composed of a metal material with high thermal conductivity (e.g., copper or aluminum, etc.), so that the heat generated by the resistor layer 120 can be discharged more quickly, thereby improving the power tolerance of the high-power thin-film resistor 100.

[0029] The protective layer 170 can prevent the heat conductive layer 150 and the back inner electrode layer 160 from being polluted or oxidized by the environment, and achieve the effect of insulation protection. The material of the protective layer 170 includes but is not limited to epoxy resin, polyimide, acrylic resin or other insulating materials. In this embodiment, the first protective layer 170a covers a portion of the upper surface of the passivation layer 140 and the heat conductive layer 150. The second protective layer 170b covers a portion of the surface of the substrate 110 and the back inner electrode layer 160.

[0030] The two connection layers 180 are connected to the corresponding side walls of the substrate 110, the resistor layer 120, the internal electrode layer 130, the heat conductive layer 150 and the back internal electrode layer 160 at the two sides, and the two external electrodes 190 extend from the surface of the first protective layer 170a to the surface of the second protective layer 170b to cover the two sides of these layers. The structure of the external electrode 190 includes a copper metal layer 151, a nickel metal layer and a tin metal layer formed in sequence by an electroplating process, wherein the copper metal layer 151 is used as another heat conductive layer to improve the thermal conductivity of the high-power thin film resistor 100, and the outermost tin metal layer provides the function of soldering and bonding between the high-power thin film resistor 100 and the external circuit board.

[0031] exist Figure 2A , a top view schematic diagram of the resistor layer 120 and the internal electrode layer 130 of the high-power thin film resistor 100 according to some embodiments of the present invention is further illustrated. The internal electrode layer 130 includes two end internal electrode regions 130a, 130d and middle internal electrode regions 130b, 130c, dividing the resistor layer 120 below into two end resistor regions 120a, 120c close to the two end internal electrode regions 130a, 130d and a middle resistor region 120b. The two end resistor regions 120a, 120c and the middle resistor region 120b of the resistor layer 120 each include at least one trimming region 121 for adjusting the resistance to obtain the target resistance of each resistor region. In this embodiment, the two end resistor regions 120a, 120c are designed as a double bending pattern, and the middle resistor region 120b is designed as a diagonal line pattern, so that the width of the cross-sectional area in the resistance formula is increased, thereby achieving a lower target resistance.

[0032] In a preferred embodiment of the present invention, the substrate length of the high-power thin film resistor 100 is L, wherein the length L1 of the inner electrode region is less than the length L2, and the length L2 is less than 1 / 4L; the length L3 is between 1 / 4L and 1 / 3L; the length L4 is between 1 / 2L and 3 / 5L. The width of the high-power thin film resistor 100 is W, wherein the width W1 is between 4 / 5W and 9 / 10W; the width W2 is between 3 / 5W and 3 / 4W; the width W3 is the width of the inner electrode regions 130a and 130d at both ends, which is between 1 / 3W and 1 / 2W; the width W4 is between 1 / 2W1 and 3 / 4W1.

[0033] exist Figure 2B , a schematic diagram of the equivalent resistance of the resistance layer 120 of the high power thin film resistor 100 according to some embodiments of the present invention is further illustrated. The total resistance value R of the high power thin film resistor 100 is T It can be equivalent to the resistance values ​​of the two-end resistance areas 120a, 120c and the middle resistance area 120b being connected in series. In the embodiment of the present invention, the resistance value of the two-end resistance area 120a is R1, the resistance value of the middle resistance area 120b is R2, and the resistance value of the two-end resistance area 120c is R3, and the resistance value R1 of the two-end resistance area 120a is equal to the resistance value R3 of the two-end resistance area 120c, so that the heat generated by the resistance layer 120 can be evenly distributed in the entire high-power thin-film resistor 100, and more than 50% of the heat can be directly conducted to the external circuit by the two-end internal electrode areas 130a, 130d of the internal electrode layer 130. In some preferred embodiments, the design range of the resistance values ​​R1, R2 and R3 is 1 / 4R≤R1=R3≤1 / 3R.

[0034] exist Figure 3, a top perspective view of the heat-conducting layer 150 and the resistor layer 120 of the high-power thin-film resistor 100 according to some embodiments of the present invention is further illustrated. The heat-conducting layer 150 is disposed above the side of the resistor layer 120 having the trimming area 121, and the trimming areas 121 of the resistor areas 120a and 120c at both ends of the resistor layer 120 and the middle resistor area 120b are all located below the area of ​​the heat-conducting layer 150. Since the trimming area 121 is usually a heat-concentrated area, placing the trimming area 121 below the area of ​​the heat-conducting layer 150 is beneficial to the overall heat dissipation of the high-power thin-film resistor 100, so that the heat generated by the trimming area 121 can be directly conducted to the heat-conducting layer 150 through the passivation layer 140, and then conducted to the external circuit through the heat-conducting layer 150. In an embodiment of the present invention, the width of the high-power thin-film resistor 100 is W, and the substrate length is L, wherein the thermal conductive layer 150 has a width W5 and a length L6, and the width W5 is between the range of 4 / 5W and 9 / 10W, and the length L6 is between the range of 1 / 3L and 9 / 10W, and covers the two end resistance areas 120a, 120c of the resistance layer 120 and the trimming area 121 of the middle resistance area 120b.

[0035] Please refer to Figure 4 , Figure 4 A schematic flow chart of a method 200 for manufacturing a high power thin film resistor according to an embodiment of the present invention is shown. The manufacturing method 200 may include: Figure 1B The high power thin film resistor 100 shown in the figure can be realized, or can be realized by a similar architecture that can realize similar functions. Figure 4 The manufacturing method 200 combines Figure 1B High power thin film resistors 100 and FIG. 5A to FIG. 5M To illustrate, FIG. 5A to FIG. 5M Draw the Figure 4 Schematic cross-sectional views of the high-power thin-film resistor 100 manufactured by the manufacturing method 200 at various manufacturing stages.

[0036] It should be understood that the manufacturing method 200 is a non-limiting example. Although only some operations are briefly described herein, in fact, Figure 4 Other additional operations may be included before, during or after the manufacturing method 200. In addition, the order of operations provided by the manufacturing method 200 is not intended to be limiting. In fact, some operations may be performed in different orders, and some additional operations may be appropriately modified.

[0037] The manufacturing method 200 includes steps 201 to 206. Figure 4 , Figure 5A and Figure 5B (Corresponding to step 201 ), firstly, a substrate 110 is provided, and a resistance layer 120 is deposited on the substrate 110 by sputtering.

[0038] Please refer to Figure 4 and Figure 5C (Corresponding to step 202), a patterned and removable anti-plating layer 301' is covered on the resistor layer 120 by printing or photolithography. The patterned anti-plating layer 301' can also be a photoresist layer, a removable film or ink, etc., but the present invention is not limited thereto.

[0039] Please refer to Figure 4 , Figure 5D and Figure 5E (corresponding to step 203 and step 204), an electroplating layer 130' is formed on the resistor layer 120 by electroplating, and its material is, for example, copper. Then, the patterned anti-electroplating layer 301' (patterned photoresist layer) is removed by a stripping solvent or water washing method, so that the electroplating layer 130' is formed into an internal electrode layer 130 having two end internal electrode regions 130a, 130d and middle internal electrode regions 130b, 130c, and the place where the patterned anti-electroplating layer 301' is removed exposes the resistor layer 120 below, so that the resistor layer 120 has two end resistance regions 120a, 120c close to the two end internal electrode regions 130a, 130d and a middle resistance region 120b.

[0040] Please refer to Fig. 5F , then the resistance adjustment operation is performed on the upper portions of the two-end resistance regions 120a, 120c and the middle resistance region 120b by laser trimming or physical processing to obtain the desired target resistance value in the trimmed resistance region 121 (the resistance value of the two-end resistance region 120a is R1, the resistance value of the middle resistance region 120b is R2, and the resistance value of the two-end resistance region 120c is R3). As shown in the figure, the trimming process cuts the two-end resistance regions 120a, 120c and the middle resistance region 120b, and forms a plurality of grooves (i.e., the trimmed resistance region 121) thereon.

[0041] Please refer to Figure 5G Then, a patterned and removable photoresist 302' is covered on the inner electrode regions 130a and 130d at both ends by printing or photolithography. The patterned photoresist 302' may also be a removable film or ink, etc., but the present invention is not limited thereto.

[0042] Please refer to Figure 4 and Figure 5H (Corresponding to step 205), firstly, a passivation layer 140 is deposited on the resistor layer 120 and the inner electrode layer 130 by sputtering or chemical vapor deposition (CVD). Then, the patterned photoresist 302' is removed by a stripping solvent or water washing to expose the inner electrode regions 130a and 130b at the two ends below.

[0043] Please refer to Fig.5I Then, a layer of I-shaped and removable patterned photoresist 303' is covered on the passivation layer 140 by printing or photolithography. The patterned photoresist 303' can also be a removable film or ink, etc., and the present invention is not limited thereto.

[0044] Please refer to Figure 4 , Figure 5J and Figure 5K (corresponding to step 206 ), one or more copper layers 150 ′ are then sputtered on the passivation layer 140 and the patterned photoresist 303 ′ by sputtering. Then, the patterned photoresist 303 ′ is removed by a stripping solvent or water washing to form the copper layer 150 ′ into the thermal conductive layer 150 .

[0045] Please refer to Figure 5L Then, a first protective layer 170 a is formed on a portion of the upper surface of the heat conducting layer 150 by printing, lamination or photolithography.

[0046] Please refer to Figure 5M Then, a back side internal electrode layer 160 and a second protection layer 170 b are formed on the back side of the substrate 110 in a manner similar to the formation of the internal electrode layer 130 and the first protection layer 170 a.

[0047] In the embodiment of the present invention, two connection layers 180 are formed by sputtering to connect the corresponding side walls of the substrate 110, the resistor layer 120, the internal electrode layer 130, the heat conductive layer 150 and the back internal electrode layer 160 on both sides. Finally, the copper metal layer 151, the nickel metal layer and the tin metal layer are formed in sequence by electroplating. At this point, the high power thin film resistor 100 is basically completed.

[0048] According to the high-power thin-film resistor and its manufacturing method of the present invention, the effects that can be achieved are as follows: the resistor area has two-end resistor areas and a middle resistor area close to the two-end internal electrode areas, wherein the resistance values ​​of the two-end resistor areas and the middle resistor area are connected in series as a total equivalent resistance, and the resistance values ​​of the two-end resistor areas are designed to be equal, so that the heat generated by the resistor layer can be evenly dispersed throughout the high-power thin-film resistor, and more than 50% of the heat can be directly conducted to the external circuit by the two-end internal electrode areas of the internal electrode layer; a heat-conducting layer is arranged on the upper side of the resistor layer, and the trimming area of ​​the resistor layer is covered under the area of ​​the heat-conducting layer, so that the heat generated by the trimming area can be directly conducted to the heat-conducting layer through the passivation layer, thereby improving the heat dissipation rate; the heat-conducting layer is in direct contact with the inner electrode below at both ends to improve the heat dissipation rate; the two-end resistor areas of the resistor layer are designed as double-bend patterns, and the middle resistor area is designed as a diagonal pattern, so that the width of the cross-sectional area in the resistance formula is increased, thereby achieving a lower target resistance value. In summary, the high-power thin-film resistor of the present invention not only improves the overall heat dissipation efficiency of the resistor, but also increases the power tolerance range of the resistor.

[0049] Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention. Any technician in this technical field can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention shall be determined by the following claims.

[0050]

Explanation of symbols

[0051] 100: High power thin film resistor

[0052] 110:Substrate

[0053] 120: Resistance layer

[0054] 120a, 120c: two-end resistance area

[0055] 120b: Middle resistance area

[0056] 130: Inner electrode layer

[0057] 130': Electroplating layer

[0058] 130a, 130d: inner electrode areas at both ends

[0059] 130b, 130c: middle inner electrode area

[0060] 140: passivation layer

[0061] 150: Thermal conductive layer

[0062] 150a, 150b: Heat conductor

[0063] 150c: Clearance

[0064] 150': Copper layer

[0065] 151: Copper metal layer

[0066] 160: Back inner electrode layer

[0067] 170a: first protective layer

[0068] 170b: Second protective layer

[0069] 180: Connection layer

[0070] 190: External electrode

[0071] A-A': line

[0072] L,L1,L2,L3,L4,L5: Length

[0073] W,W1,W2,W3,W4,W5: Width

[0074] RT ,R1,R2,R3: resistance

[0075] 200: Manufacturing method

[0076] 201,202,203,204,205,206: Steps

[0077] 301': Anti-plating layer

[0078] 302', 303': photoresist.

Claims

1. A high power thin film resistor, characterized in that: Include: substrate; A resistance layer is disposed above the substrate, wherein the resistance layer has a middle resistance area and two end resistance areas; An inner electrode layer is disposed above the resistor layer, wherein the inner electrode layer has a middle inner electrode region and two end inner electrode regions, dividing the resistor layer into the middle resistor region and the two end resistor regions; A passivation layer covering the resistor layer and a portion of the inner electrode layer; as well as A heat-conducting layer is disposed above the passivation layer, wherein the heat-conducting layer has two heat-conducting bodies and a gap between the two heat-conducting bodies, and the two heat-conducting bodies are respectively in contact with the two end inner electrode regions of the inner electrode layer; The middle resistance area and the two end resistance areas form a series resistor, and the two end resistance areas have the same resistance value.

2. The high power thin film resistor according to claim 1, characterized in that: The middle resistance area and the two end resistance areas each include: A trimming area, wherein the trimming area is located below the area covered by the two heat conductors of the heat conductive layer.

3. The high power thin film resistor according to claim 1, characterized in that: It includes: The back inner electrode layer is arranged on the other side of the substrate relative to the resistance layer.

4. The high power thin film resistor according to claim 3, characterized in that: It also includes: Two connection layers are respectively arranged on two side edges of the substrate, and are connected to the back inner electrode layer, the inner electrode layer and the heat conducting layer at the two side edges.

5. The high power thin film resistor according to claim 4, characterized in that: It also includes two external electrode layers, which have external electrode heat-conducting layers. The two external electrode layers respectively cover the corresponding side walls of the heat-conducting layer and the internal electrode layer.

6. The high power thin film resistor according to claim 1, characterized in that: Each of the two-end resistor regions is a double-bending pattern, and the double-bending pattern surrounds a corresponding one of the two-end inner electrode regions.

7. A method for manufacturing a high power thin film resistor, characterized in that: Include: depositing a resistor layer on the substrate; forming a patterned photoresist layer on the resistance layer; forming an inner electrode layer on the patterned photoresist layer; The patterned photoresist layer is removed to form a middle internal electrode region and two end internal electrode regions in the internal electrode layer, and to expose the middle resistance region and two end resistance regions of the resistance layer below, wherein the middle resistance region and the two end resistance regions form a series resistor, and the two end resistance regions have the same resistance value; forming a passivation layer on the resistor layer and a portion of the inner electrode layer; and A heat-conducting layer is formed on the passivation layer, wherein the heat-conducting layer is formed with two heat-conducting bodies and a gap between the two heat-conducting bodies, and the two heat-conducting bodies are respectively in contact with the two end inner electrode regions of the inner electrode layer.

8. The method according to claim 7, characterized in that Also includes: A trimming area is formed in each of the middle resistance area and the two end resistance areas, wherein the trimming area is located below the area covered by the two heat conductors of the heat conductive layer.

9. The method according to claim 7, characterized in that: The method also includes forming a back-side inner electrode layer on the other side of the substrate relative to the resistance layer.

10. The method according to claim 7, characterized in that The method also includes forming two external electrode layers, wherein the two external electrode layers have external electrode heat-conducting layers, and the two external electrode layers respectively cover the heat-conducting layer and the corresponding side walls of the two internal electrode layers.

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