Self-adaptive wafer positioning system and control method thereof

Abstract

The invention provides a self-adaptive wafer positioning system and a control method thereof, and belongs to the technical field of wafer processing. The system comprises a heating table; the clamp assembly is arranged in the process cavity and arranged to be capable of ascending and descending in the vertical direction, the clamp assembly comprises a supporting part which is horizontally arranged along the inner wall of the process cavity in a surrounding mode, the supporting part is supported on the edge area of the bottom of the wafer, and the width of the supporting part in the radial direction of the wafer is adjustable so as to adapt to wafers of different sizes; the supporting part is used for forming a corresponding radial width according to the size of the wafer and moving to a first preset height when the wafer is transferred into the process cavity so as to receive the wafer, and the supporting part is also used for moving to a second preset height after receiving the wafer and gradually reducing the radial width of the supporting part at the position of the second preset height so as to enable the wafer to fall on the heating table. According to the self-adaptive wafer positioning system, the cost can be reduced, the occupied space of equipment is saved, and the maximum utilization of the equipment is realized.

Description

Technical Field

[0001] The present application relates to the field of wafer processing technology, and in particular to an adaptive wafer positioning system and a control method thereof. Background Art

[0002] The wafer processing process inevitably requires the use of semiconductor equipment including process chambers, such as chemical deposition chambers. Different sized chambers are required for wafers of different sizes. For example, a 12-inch wafer processing requires a 12-inch chamber, and an 8-inch wafer processing requires an 8-inch chamber. Therefore, when processing wafers of different sizes, manufacturers need to equip semiconductor equipment of different sizes, which greatly increases production costs and takes up too much space. Summary of the invention

[0003] An object of the first aspect of the present invention is to provide an adaptive wafer positioning system that can reduce costs, save equipment space, and maximize equipment utilization.

[0004] Another object of the present invention is to improve the position accuracy of the wafer.

[0005] A further object of the present invention is to achieve stepless adjustment of radial width to accommodate wafers of non-standard sizes.

[0006] An object of the second aspect of the present invention is to provide a control method for the above-mentioned adaptive wafer positioning system, which can realize fully automatic and precise positioning of the wafer into the cavity.

[0007] An embodiment of the present invention provides an adaptive wafer positioning system, comprising: A heating stage, disposed in the process chamber and used for heating the wafer; A fixture assembly is disposed in the process chamber and is configured to be able to be lifted and lowered vertically, the fixture assembly comprising a support portion horizontally arranged around the inner wall of the process chamber, the support portion is supported on the edge area of ​​the bottom of the wafer, and the width of the support portion along the radial direction of the wafer is adjustable to adapt to wafers of different sizes; The support portion is used to form a corresponding radial width according to the size of the wafer, and to move to a first preset height when the wafer is transferred into the process chamber to receive the wafer. The support portion is also used to move down to a second preset height after receiving the wafer, and to gradually reduce the radial width of the support portion at the second preset height position so that the wafer falls onto the heating table.

[0008] Furthermore, the second preset height is smaller than a preset value, so that the heating platform adsorbs the wafer by electrostatic adsorption force.

[0009] Furthermore, the radial width of the orthographic projection of the support portion on the wafer is any value between 500 μm and 1000 μm.

[0010] Furthermore, the support portion includes a plurality of rotating plates arranged along the circumference of the wafer, each rotating plate can rotate around a vertical axis, and the plurality of rotating plates form different radial widths when they are at different angles.

[0011] Furthermore, the clamp assembly also includes a connecting portion, which is configured to be able to rise and fall vertically, and each of the rotating plates is connected to the connecting portion via a rotating shaft.

[0012] Furthermore, all the rotating shafts are arranged to rotate synchronously.

[0013] Furthermore, the adaptive wafer positioning system also includes a position sensor for identifying the position of the wafer so that the handling mechanism moves the wafer to a position where the center is aligned with the clamp assembly.

[0014] An embodiment of the present invention further provides a control method for the adaptive wafer positioning system described in any one of the above, comprising: Get the size information of the wafer; adjusting the radial width of the support portion according to the size information; When it is recognized that the wafer reaches a preset position in the process chamber, controlling the support portion to move to a first preset height; Controlling the support portion to move to a second preset height; The supporting portion is controlled to gradually reduce its radial width until the wafer is released.

[0015] Furthermore, before the step of controlling the support portion to move to the first preset height, the step further includes: identifying a center position of the wafer; The wafer is controlled to move to a position aligned with the center of the support portion.

[0016] Furthermore, the second preset height Determined according to the following formula: ; in, is the first adjustment coefficient, is the second adjustment coefficient, is the diameter of the wafer, is the mass of the wafer; In the step of controlling the support portion to gradually reduce its radial width until the wafer is released, the retraction speed of the support portion is Determined according to the following formula: ; in, is the third adjustment coefficient, is the current temperature of the heating stage, is the initial temperature of the heating stage, is the adjustment index.

[0017] According to a first aspect of the present invention, there is provided an adaptive wafer positioning system, which is equipped with a fixture assembly that can be raised and lowered and can adjust the radial width, and the support portion of the fixture assembly adjusts the radial width according to the current size of the wafer to adapt to wafers of different sizes. The fixture assembly can receive the wafer by lifting and placing the wafer on the heating table, thereby completing the automatic placement of the wafer. The wafer positioning system of the present application can meet the use requirements of different wafers, and no longer requires semiconductor equipment of multiple sizes. Therefore, it can maximize the use of the process capabilities of semiconductor equipment, reduce equipment investment, reduce costs, and save equipment space in multi-size wafer production scenarios.

[0018] Furthermore, by limiting the radial width of the orthographic projection of the support portion on the wafer, it is ensured that the area of ​​the support region is not too large, so that the support portion can release the wafer conveniently later without changing the position of the wafer during the release process. The above-mentioned size limitation can also ensure that the support portion can effectively support the wafer.

[0019] Furthermore, the present application limits the descending position of the support part, so that the wafer descends to a height difference with the heating platform that is less than a preset value, and then the support part is controlled to retract, that is, the wafer is released. Releasing the wafer at this height allows the electrostatic adsorption force of the heating platform on the wafer to play a role, that is, the wafer moves closer to the heating platform under the action of the electrostatic adsorption force, thereby ensuring the accuracy of the wafer position when released.

[0020] Furthermore, the present application provides a rotating support part, including a plurality of synchronously rotating rotating plates, by controlling the synchronous rotation of the rotating plates, a support part with different radial widths is formed to adapt to wafers of different sizes, and the support part of this structure has a good supporting effect and is flexible and convenient to adjust. The setting of the guide structure can ensure the position accuracy of the support part when it moves up and down.

[0021] Furthermore, the support portion of this structure can achieve stepless adjustment of the radial width, so it can not only adapt to the size of standard wafers, but also adapt to wafers of non-standard sizes, thereby expanding the scope of application of the equipment.

[0022] According to the second aspect of the present invention, a control method for the above-mentioned adaptive wafer positioning system is also provided, which can realize automatic positioning and transfer of wafers of different sizes in the process chamber, maximize the utilization of semiconductor equipment processes and realize fully automatic and precise positioning of wafers into the chamber. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 A schematic diagram of a top-down cross-sectional structure of an adaptive wafer positioning system according to an embodiment of the present invention; Figure 2 is a schematic diagram of a top cross-sectional structure of an adaptive wafer positioning system according to another embodiment of the present invention; Figure 3 A schematic diagram of a top cross-sectional structure of an adaptive wafer positioning system according to another embodiment of the present invention; Figure 4 is a flow chart of a control method according to an embodiment of the present invention; Figure 5 is a flow chart of a control method according to another embodiment of the present invention; Reference numerals: 100-adaptive wafer positioning system, 10-heating table, 30-process chamber, 31-groove, 20-clamp assembly, 21-support part, 201-adjustment plate, 202-vertical axis, 203-rotation plate, 211-rotation sheet, 212-connecting part, 213-rotation shaft, 214-guide structure, 40-position sensor, 200-wafer. DETAILED DESCRIPTION

[0024] In order to make the above-mentioned purposes, features and advantages of the present application more obvious and easy to understand, the specific implementation methods of the present application are described in detail below in conjunction with the accompanying drawings. In the following description, many specific details are set forth to facilitate a full understanding of the present application. However, the present application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar improvements without violating the connotation of the present application, so the present application is not limited by the specific embodiments disclosed below.

[0025] It should be noted that when a component is referred to as being "fixed to" or "disposed on" another component, it may be directly on the other component or there may also be a central component. When a component is considered to be "connected to" another component, it may be directly connected to the other component or there may be a central component at the same time. The terms "vertical", "horizontal", "upper", "lower", "left", "right" and similar expressions used in the specification of this application are for illustrative purposes only and do not represent the only implementation method.

[0026] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of the features. In the description of this application, the meaning of "plurality" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined.

[0027] In the present application, unless otherwise clearly specified and limited, a first feature being “above” or “below” a second feature may mean that the first feature is directly in contact with the second feature, or the first feature and the second feature are in contact indirectly through an intermediate medium. Moreover, a first feature being “above”, “above”, or “above” a second feature may mean that the first feature is directly above or obliquely above the second feature, or simply means that the first feature is higher in level than the second feature. A first feature being “below”, “below”, or “below” a second feature may mean that the first feature is directly below or obliquely below the second feature, or simply means that the first feature is lower in level than the second feature.

[0028] Unless otherwise defined, all technical and scientific terms used in the specification of this application have the same meaning as those commonly understood by those skilled in the art to which this application belongs. The terms used in the specification of this application are only for the purpose of describing specific embodiments and are not intended to limit this application. The term "and / or" used in the specification of this application includes any and all combinations of one or more related listed items.

[0029] Figure 1 FIG. 1 is a schematic top view of the structure of an adaptive wafer positioning system 100 according to an embodiment of the present invention. Figure 2 FIG. 1 is a schematic diagram of a top view of an adaptive wafer positioning system 100 according to another embodiment of the present invention. Figure 1 As shown, in one embodiment, the adaptive wafer positioning system 100 includes a heating platform 10 and a fixture assembly 20. The heating platform 10 is arranged in the process chamber 30 and is used to heat the wafer 200. The heating platform 10 here can be a high-density thermal point distribution type heating device, and the heating area is controllable, so that the corresponding area is heated according to the wafers 200 of different sizes. The process chamber 30 can be a sealed chamber used in the manufacturing process of the wafer 200, such as a deposition chamber, an annealing chamber, an oxidation chamber, etc. The fixture assembly 20 is arranged in the process chamber 30 and is configured to be able to rise and fall vertically. The fixture assembly 20 includes a support portion 21 horizontally arranged around the inner wall of the process chamber 30, and the support portion 21 is supported on the edge area of ​​the bottom of the wafer 200. The width of the support portion 21 along the radial direction of the wafer 200 is adjustable to adapt to wafers 200 of different sizes. Here, the support part 21 may include a plurality of adjustment plates 201 that can be extended and retracted along the radial direction of the wafer 200. By controlling the extension and retraction of the adjustment plates 201 along the radial direction, different radial widths W are controlled. In the present application, the radial width W of the support part 21 is defined as the maximum distance between the support part 21 and the inner wall of the process chamber 30 in the radial direction of the wafer 200. The shape of the adjustment plate 201 can be rectangular, arc-shaped (see Figure 1 Embodiment), long strip, fan-shaped, etc., are not limited here, as long as they can be extended and contracted in the radial direction to adjust the radial width to match the wafers 200 of different sizes. Figure 2As shown, the support portion 21 may also include a plurality of rotating plates 203 that can rotate around the vertical axis 202. Different radial widths can be formed by controlling different rotation angles of the rotating plates 203. Figure 2 The rotating plate 203 shown by the solid line is in the initial position, and the rotating plate 203 shown by the dotted line is in the state after being rotated to a certain angle, and the radial width of the support portion 21 changes from W1 to W2. Of course, in other embodiments not shown, the support portion 21 can also be in other forms, which are not limited here. It should be noted that the material of the clamp assembly 20 here should be compatible with the environment of the process chamber 30. For example, when the chamber is in a high temperature environment during deposition, the material of the clamp assembly 20 can be selected from high temperature resistant ceramics.

[0030] The support portion 21 is used to form a corresponding radial width according to the size of the wafer 200, and to move to a first preset height when the wafer 200 is transferred to the process chamber 30 to receive the wafer 200. The support portion 21 is also used to move down to a second preset height after receiving the wafer 200, and gradually reduce the radial width of the support portion 21 at the second preset height position, so that the wafer 200 falls onto the heating table 10. The height of the support portion 21 in this application is interpreted as the height of the contact surface between the support portion 21 and the wafer 200.

[0031] During this process, the wafer 200 can be transferred from the workstation corresponding to the previous process to the target position in the process chamber 30 of this process through the transport mechanism in the previous process or this process. The target position here is the first preset height mentioned above.

[0032] The present application provides an adaptive wafer positioning system 100, which is equipped with a clamp assembly 20 that can be raised and lowered and can adjust the radial width. The support portion 21 of the clamp assembly 20 adjusts the radial width according to the size of the current wafer 200 to adapt to wafers 200 of different sizes. The clamp assembly 20 can receive the wafer 200 by lifting and lowering and place the wafer 200 on the heating table 10, thereby completing the automatic placement of the wafer 200. The wafer positioning system of the present application can meet the use requirements of different wafers, and no longer requires semiconductor equipment of multiple sizes. Therefore, it can maximize the use of the process capabilities of semiconductor equipment, reduce equipment investment, reduce costs, and save equipment space in multi-size wafer production scenarios.

[0033] like Figure 1 As shown, in a further embodiment, the adaptive wafer positioning system 100 further includes a position sensor 40 for identifying the position of the wafer 200 , so that the transport mechanism moves the wafer 200 to a position where the center is aligned with the clamp assembly 20 .

[0034] In one embodiment, the radial width W3 of the orthographic projection of the support portion 21 on the wafer 200 (i.e., the overlapping area of ​​the support portion 21 and the wafer 200) is any value in the range of 500μm-1000μm, for example, W3 is 500μm, 600μm, 750μm, 800μm, 850μm, 900μm or 1000μm, and W3 may also be any other value in the range of 500μm-1000μm. Here, W3 for wafers 200 of different sizes may be the same or different, for example, all may be set to 600μm, or W3 may gradually increase as the size of the wafer 200 increases.

[0035] The present application limits the radial width of the orthographic projection of the support portion 21 on the wafer 200 to ensure that the area of ​​the support region is not too large, so that the support portion 21 can release the wafer 200 conveniently and the position of the wafer 200 will not be changed during the release process. The above size limitation can also ensure that the support portion 21 can effectively support the wafer 200.

[0036] In one embodiment, assuming that the height of the top surface of the heating platform 10 is 0, the first preset height is any value between 1cm and 2cm, for example, the first preset height is 1cm, 1.2cm, 1.5cm, 1.8cm or 2cm, and the first preset height may also be any other value between 1cm and 2cm. The second preset height is less than the preset value, so that the heating platform 10 adsorbs the wafer 200 by electrostatic adsorption force, for example, the second preset height is any value between 1mm and 2mm, for example, the second preset height is 1mm, 1.5mm or 2mm, and the second preset height may also be any other value between 1mm and 2mm.

[0037] In the present application, the descending position of the support part 21 is limited, so that the wafer 200 descends to a height difference with the heating stage 10 that is less than a preset value, and then the support part 21 is controlled to retract, that is, the wafer 200 is released. The wafer 200 is released at this height, so that the electrostatic adsorption force of the heating stage 10 on the wafer 200 works, that is, the wafer 200 moves closer to the heating stage 10 under the action of the electrostatic adsorption force, thereby ensuring the accuracy of the position of the wafer 200 when released.

[0038] Figure 3 FIG. 1 is a schematic top view of an adaptive wafer positioning system 100 according to another embodiment of the present invention. Figure 3 The double-dotted line in FIG. 2 shows the outer contour of the wafer 200, which is used to express the position of the wafer 200 after being placed on the support portion 21. Figure 3As shown, in one embodiment, the support portion 21 includes a plurality of rotating plates 211 arranged along the circumference of the wafer 200, each rotating plate 211 can rotate around a vertical axis, and the plurality of rotating plates 211 form different radial widths when they are at different angles. The clamp assembly 20 also includes a connecting portion 212, which is configured to be able to rise and fall vertically. The connecting portion 212 can be Figure 3 The circular integrated structure shown may also be a plurality of structures arranged separately, and the plurality of structures can be arranged to rise and fall synchronously, and no limitation is made here. Each rotating piece 211 is connected to the connecting portion 212 via a rotating shaft 213, and all the rotating shafts 213 are arranged to rotate synchronously.

[0039] In one embodiment, the connecting portion 212 is an integrated structure, which is driven to move up and down by a lifting drive, for example, the lifting component is a combination of a linear motor, a rotary motor and a transmission mechanism (for converting the rotation of the rotary motor into linear motion), a hydraulic lifting mechanism, a cylinder, etc., which is not limited here. Figure 3 As shown, a guide structure 214 is provided between the connecting portion 212 and the process chamber 30. For example, an outer peripheral surface of the connecting portion 212 shown in the figure is provided with an inwardly concave groove, and an inner side wall of the process chamber 30 is provided with a convex strip matching the groove. The cooperation between the groove and the convex strip enables the connecting portion 212 to move only vertically.

[0040] In one embodiment, the driving structure of the rotating shaft 213 includes a transmission mechanism and a rotating motor. The transmission mechanism can be a gear assembly, for example, a first gear is fixedly connected to the rotating output shaft of the rotating motor, and multiple second gears are meshed with the first gear, and each second gear is connected to each rotating shaft 213, so as to achieve the synchronous rotation of all the rotating shafts 213. The connecting portion 212 is provided with a through hole for passing the rotating shaft 213, and the rotating shaft 213 is fixedly connected to the rotating piece 211, so as to achieve the synchronous rotation of all the rotating pieces 211. Of course, in other embodiments, the synchronous driving structure of the rotating shaft 213 can also be other, which is not limited here.

[0041] This embodiment provides a rotating support part 21, including a plurality of synchronously rotating rotating pieces 211. By controlling the synchronous rotation of the rotating pieces 211, a support part 21 with different radial widths is formed to adapt to wafers of different sizes. The support part 21 of this structure has a good supporting effect and is flexible and convenient to adjust. The setting of the guide structure 214 can ensure the position accuracy of the support part 21 when it moves up and down.

[0042] Furthermore, the support portion 21 of this structure can realize stepless adjustment of radial width, and thus can adapt not only to the size of standard wafers, but also to wafers of non-standard sizes, thereby expanding the application scope of the equipment.

[0043] The transmission mechanism, driving motor, etc. of the fixture assembly 20 may be disposed in the side wall and / or bottom space of the process chamber 30 .

[0044] In a further embodiment, the support portion 21 can be adjusted to a state where it is retracted into the side wall of the process chamber 30. Figure 1 In the illustrated embodiment, the adjustment plate 201 can be fully retracted into the side wall of the process chamber 30, or Figure 3 In the illustrated embodiment, a groove 31 is provided on the side wall of the process chamber 30 , and the connecting portion 212 is provided in the groove 31 . When the rotating plate is rotated to a certain angle, it can be completely located in the groove 31 without protruding from the side wall of the process chamber 30 .

[0045] In the present application, the support portion 21 is configured to be retractable into the side wall of the process chamber 30 , so it is compatible with the original positioning method of the equipment.

[0046] Figure 4 FIG. 1 is a flow chart of a control method according to an embodiment of the present invention. Figure 4 As shown, the present application also provides a control method for the above-mentioned adaptive wafer positioning system 100. In one embodiment, the control method includes: Step S100, obtaining size information of the wafer; Step S200, adjusting the radial width of the support portion 21 according to the size information; Step S300, when it is recognized that the wafer 200 reaches a preset position in the process chamber 30, the support portion 21 is controlled to move to a first preset height; Step S400, controlling the support portion 21 to move to a second preset height; Step S500 , controlling the support portion 21 to gradually reduce its radial width until the wafer 200 is released.

[0047] In step S100 , the size information of the wafer 200 may be directly input into the machine, or the size of the wafer 200 may be identified by a detection device, such as an image acquisition device such as a camera.

[0048] In step S200, the relationship between the adjustment amount of the support part 21 and the size of the wafer 200 can be predefined so that the machine can query the corresponding adjustment amount when obtaining the size information of the wafer 200, and then control the driving component of the clamp assembly 20 to output the corresponding adjustment amount. Figure 3 In the illustrated embodiment, the adjustment amount is the output angle of the motor.

[0049] In step S300 , the support part 21 may be controlled to move to the first preset height when it is recognized that the wafer 200 enters the process chamber 30 , or the support part 21 may be controlled to move when the wafer 200 moves to a specific position.

[0050] Figure 5FIG. 1 is a flow chart of a control method according to another embodiment of the present invention. In a further embodiment, Figure 5 As shown, after step S200, the following steps are included: Step S220, controlling the transport mechanism to move the wafer 200 to a first preset height; Step S230, identifying the center position of the wafer 200; Step S240 , controlling the transport mechanism to move the wafer 200 to a position aligned with the center of the support portion 21 ; Step S310, controlling the support portion 21 to move to a first preset height; Step S320, controlling the transport mechanism to move to a first preset height and releasing the wafer 200, and then executing step S400; In step S510 , the supporting portion 21 is controlled to gradually reduce its radial width with a preset step value until the wafer 200 is released.

[0051] In step S240, the center of the support portion 21 can be calculated by identifying the coordinates of a specific position on the support portion 21, for example, by identifying Figure 3 By obtaining the coordinates of points A, B and C on the three rotating pieces 211, the center of the support portion 21 can be obtained, that is, the center of the circle passing through A, B and C. Of course, the center of the support portion 21 can also be identified by other commonly used identification methods, which are not limited here.

[0052] In step S510, the radial dimension (i.e., the preset step value) of each reduction is any value in the range of 10-100 μm, for example, the preset step value is 10 μm, 30 μm, 50 μm, 80 μm or 100 μm, and the preset step value may also be any other value in the range of 500 μm-1000 μm, which is not limited here. The preset step value of each movement here may be set to the same value or different values, for example, to a gradually decreasing value.

[0053] The control method of this embodiment can realize the automatic positioning and transfer of wafers 200 of different sizes in the process chamber 30, thereby maximizing the utilization of semiconductor equipment processes and achieving fully automatic and precise positioning of the wafers 200 into the chamber.

[0054] In another embodiment, the second preset height Determined according to the following formula (1): ; in, is the first adjustment coefficient, is the second adjustment coefficient, is the diameter of the wafer 200, is the mass of wafer 200; In step S510, the retraction speed of the support portion 21 is Determined according to the following formula: ; in, is the third adjustment coefficient, is the current temperature of the heating stage 10, is the initial temperature of the heating stage 10, is the adjustment index.

[0055] The first adjustment coefficient in formula (1) and (2) , the second adjustment coefficient , the third adjustment coefficient and adjustment index The calibration can be performed based on experimental data. The calibration process is as follows: by setting different first adjustment coefficients , the second adjustment coefficient , the third adjustment coefficient , Adjustment Index , Second preset height and retraction speed Wafers of different diameters and masses are tested, the center position of the wafer dropped onto the heating table 10 is detected, the deviation between the detected center position of the wafer and the center position of the support portion 21 is calculated, and finally the first adjustment coefficient is set to the value within the preset range. , the second adjustment coefficient , the third adjustment coefficient and adjustment index Substituting the value of into the above formulas (1) and (2), the preset range may be, for example, ±20 μm, and of course may be other set values, which are not limited here.

[0056] Since wafers of different masses and sizes have different gravity and resistance, the electrostatic adsorption forces on wafers of different sizes and at different second preset heights are different. The preset height determined by the above formula (1) takes into account the influencing factors of the diameter and mass of the wafer, so that the wafer is at a suitable initial landing height and can land smoothly on the heating platform.

[0057] Furthermore, in the process of gradually reducing the radial width of the support portion 21, the temperature of the heating platform may change, thereby affecting the electrostatic adsorption force. For example, when the temperature of the heating platform rises, the dielectric constant of the wafer and the heating platform will decrease, resulting in a decrease in the electrostatic adsorption force. When the electrostatic adsorption force decreases, the friction force of the support portion 21 on the wafer will decrease when it is retracted, so the retraction speed can be appropriately increased. For wafers with a larger mass, the retraction speed can be appropriately reduced to ensure the smooth fall of the wafer. Formula (2) takes into account the influence of temperature and wafer mass, and can make the retraction speed of the support portion 21 more reasonable, thereby ensuring the smooth fall of the wafer.

[0058] The above-mentioned embodiments only express several implementation methods of the present invention, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the invention patent. It should be pointed out that, for ordinary technicians in this field, several variations and improvements can be made without departing from the concept of the present invention, and these all belong to the protection scope of the present invention. Therefore, the protection scope of the patent of the present invention shall be subject to the attached claims.

Claims

1. An adaptive wafer positioning system, characterized in that: include: A heating stage, disposed in the process chamber and used for heating the wafer; A fixture assembly is disposed in the process chamber and is configured to be able to be lifted and lowered vertically, the fixture assembly comprising a support portion horizontally arranged around the inner wall of the process chamber, the support portion is supported on the edge area of ​​the bottom of the wafer, and the width of the support portion along the radial direction of the wafer is adjustable to adapt to wafers of different sizes; The support portion is used to form a corresponding radial width according to the size of the wafer, and to move to a first preset height to receive the wafer when the wafer is transferred into the process chamber. The support portion is also used to move down to a second preset height after receiving the wafer, and gradually reduce the radial width of the support portion at the second preset height position, so that the wafer falls onto the heating table; The support portion includes a plurality of rotating plates arranged along the circumference of the wafer, each rotating plate can rotate around a vertical axis, and the plurality of rotating plates form different radial widths when they are at different angles.

2. The adaptive wafer positioning system according to claim 1, characterized in that: The second preset height is smaller than a preset value, so that the heating platform adsorbs the wafer through an electrostatic adsorption force.

3. The adaptive wafer positioning system according to claim 1, characterized in that: The radial width of the orthographic projection of the support portion on the wafer is any value between 500 μm and 1000 μm.

4. The adaptive wafer positioning system according to claim 1, characterized in that: The clamp assembly also includes a connecting portion, which is configured to be able to rise and fall vertically, and each of the rotating sheets is connected to the connecting portion via a rotating shaft.

5. The adaptive wafer positioning system according to claim 1, characterized in that: All the rotating shafts are arranged to rotate synchronously.

6. The adaptive wafer positioning system according to any one of claims 1 to 5, characterized in that: A position sensor is also included for identifying the position of the wafer so that the handling mechanism can move the wafer to a position where the center is aligned with the clamp assembly.

7. A control method for the adaptive wafer positioning system according to any one of claims 1 to 6, characterized in that: include: Get the size information of the wafer; adjusting the radial width of the support portion according to the size information; When it is recognized that the wafer reaches a preset position in the process chamber, controlling the support portion to move to a first preset height; Controlling the support portion to move to a second preset height; The supporting portion is controlled to gradually reduce its radial width until the wafer is released.

8. The control method according to claim 7, characterized in that: Before the step of controlling the support portion to move to the first preset height, the method further includes: identifying a center position of the wafer; The wafer is controlled to move to a position aligned with the center of the support portion.

9. The control method according to claim 7 or 8, characterized in that: The second preset height Determined according to the following formula: ； in, is the first adjustment coefficient, is the second adjustment coefficient, is the diameter of the wafer, is the mass of the wafer; In the step of controlling the support portion to gradually reduce its radial width until the wafer is released, the retraction speed of the support portion is Determined according to the following formula: ； in, is the third adjustment coefficient, is the current temperature of the heating stage, is the initial temperature of the heating stage, is the adjustment index.

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