W-band high-power amplifier based on CMOS (Complementary Metal Oxide Semiconductor) process
By using a double-layer coupled transformer in the interstage matching module and power synthesis module of W-band high-power amplifier, the problem of power amplifier gain reduction caused by transformer losses is solved, and higher output power and efficiency is achieved.
Patent Information
- Application Number
- CN202510068241.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-01-16
- Publication Date
- 2025-05-06
AI Technical Summary
In the W-band, an increased transformer loss leads to a reduced gain of the power amplifier, low output power and efficiency.
Using a W-band high-power amplifier design based on CMOS technology, a double-layer coupling transformer is used to achieve double-layer coupling by adding metal layers in the interstage matching module and power synthesis module, which increases the coupling coefficient of the transformer and reduces insertion loss.
It effectively reduces the insertion loss of the transformer, improves the gain, output power and efficiency of the power amplifier, while maintaining the simplicity of the structure and high integration.
Smart Images
Figure CN119945350A_ABST
Abstract
Description
Technical Field
[0001] The invention belongs to the technical field of radio frequency integrated circuits, in particular to a W-band high power amplifier based on CMOS technology. Background Art
[0002] With the development of communication technology and the increasing demand for high communication rates, the millimeter wave frequency band has received widespread attention. Among them, the W band can be applied to radar communication, security inspection, and scanning imaging, becoming one of the current hot frequency bands. As one of the most difficult and most demanding modules in the W band integrated circuit module, the power amplifier has always been a research hotspot in academia and industry.
[0003] The power amplifier is composed of active devices and passive devices, among which passive devices include capacitors, inductors, transformers, etc. The transformer has the advantages of impedance transformation, ESD protection, small area, and large bandwidth. It is currently widely used as the inter-stage matching network of the W-band power amplifier circuit. In order to obtain high output power, it is usually necessary to perform multi-channel synthesis at the output stage, and transformer synthesis is one of the current mainstream synthesis technologies. However, when the frequency increases, the transformer loss will become larger, resulting in a decrease in circuit gain. When the transformer is used for synthesis at the output end of the power amplifier, high loss will lead to low output power and low efficiency. Therefore, in the W-band, how to reduce the insertion loss of the transformer to improve the power and efficiency of the power amplifier is one of the current difficulties. Summary of the invention
[0004] The purpose of the present invention is to provide a W-band high power amplifier based on CMOS technology to reduce the loss introduced by the transformer and improve the gain, output power and efficiency of the power amplifier.
[0005] In order to achieve the above-mentioned purpose, the technical methods adopted by the present invention are as follows: A W-band high-power amplifier based on CMOS technology comprises a power distribution module, a pre-stage amplifier module, an inter-stage matching module, a power stage output module and a power synthesis module, wherein the input end of the power distribution module receives a radio frequency signal output by a radio frequency signal source, the output end of the power distribution module is connected to the input end of the pre-stage amplifier module, the output end of the pre-stage amplifier module is connected to the input end of the inter-stage matching module, the output end of the inter-stage matching module is connected to the input end of the power stage output module, the output end of the power stage output module is connected to the input end of the power synthesis module, and the output end of the power synthesis module outputs the radio frequency signal after power amplification; the inter-stage matching module adopts a double-layer coupling transformer to realize impedance matching between the pre-stage amplifier module and the power stage output module, and transmits the signal output by the pre-stage amplifier module to the power stage output module; the power synthesis module adopts a double-layer coupling transformer to realize output power synthesis and output matching.
[0006] As a limitation: the power distribution module includes a first transformer and a second transformer, the output end of the RF signal source is respectively connected to one end of the first transformer primary coil and one end of the second transformer primary coil, the other end of the first transformer primary coil and the other end of the second transformer primary coil are both grounded, the two ends of the first transformer secondary coil are respectively connected to the two input ends of the pre-stage amplifier module, the two ends of the second transformer secondary coil are respectively connected to the other two input ends of the pre-stage amplifier module, and the center tap of the first transformer secondary coil and the center tap of the second transformer secondary coil are both connected to the bias voltage.
[0007] As a limitation: the pre-stage amplifier module includes a first-stage common-source amplifier circuit, a first-stage matching circuit, a second-stage common-source amplifier circuit, a second-stage matching circuit and a third-stage common-source amplifier circuit; the first-stage common-source amplifier circuit includes a first transistor, a second transistor, a third transistor, a fourth transistor, a first capacitor, a second capacitor, a third capacitor and a fourth capacitor, the first-stage matching circuit includes a third transformer and a fourth transformer, the second-stage common-source amplifier circuit includes a fifth transistor, a sixth transistor, a seventh transistor, an eighth transistor, a fifth capacitor, a sixth capacitor, a seventh capacitor and an eighth capacitor, the second-stage matching circuit includes a fifth transformer and a sixth transformer, and the third-stage common-source amplifier circuit includes a ninth transistor, a tenth transistor, an eleventh transistor, a twelfth transistor, a ninth capacitor, a tenth capacitor, an eleventh capacitor and a twelfth capacitor; The gate of the first transistor is respectively connected to the first output end of the power distribution module and one end of the first capacitor, the drain of the first transistor is respectively connected to one end of the second capacitor and one end of the primary coil of the third transformer, the gate of the second transistor is respectively connected to the second output end of the power distribution module and the other end of the second capacitor, the drain of the second transistor is respectively connected to the other end of the first capacitor and the other end of the primary coil of the third transformer, the source of the first transistor and the source of the second transistor are connected and grounded; the center tap of the primary coil of the third transformer is connected to the power supply voltage, and the center tap of the secondary coil of the third transformer is connected to the bias voltage; one end of the secondary coil of the third transformer is respectively connected to the gate of the fifth transistor and one end of the fifth capacitor, the drain of the fifth transistor is respectively connected to one end of the sixth capacitor and one end of the primary coil of the fifth transformer, and the other end of the secondary coil of the third transformer The first and second terminals of the first and second transformers are connected to the gate of the sixth transistor and the other end of the sixth capacitor respectively, the drain of the sixth transistor is connected to the other end of the fifth capacitor and the other end of the primary coil of the fifth transformer respectively, the source of the fifth transistor is connected to the source of the sixth transistor and grounded; the center tap of the primary coil of the fifth transformer is connected to the power supply voltage, and the center tap of the secondary coil of the fifth transformer is connected to the bias voltage; one end of the secondary coil of the fifth transformer is connected to the gate of the ninth transistor and one end of the ninth capacitor respectively, the drain of the ninth transistor is connected to one end of the tenth capacitor and the first input end of the inter-stage matching module respectively, the other end of the secondary coil of the fifth transformer is connected to the gate of the tenth transistor and the other end of the tenth capacitor respectively, the drain of the tenth transistor is connected to the other end of the ninth capacitor and the second input end of the inter-stage matching module respectively, and the source of the ninth transistor is connected to the source of the tenth transistor and grounded; The gate of the third transistor is connected to the third output terminal of the power distribution module and one end of the fourth capacitor respectively, the drain of the third transistor is connected to one end of the third capacitor and one end of the primary coil of the fourth transformer respectively, the gate of the fourth transistor is connected to the fourth output terminal of the power distribution module and the other end of the third capacitor respectively, the drain of the fourth transistor is connected to the other end of the fourth capacitor and the other end of the primary coil of the fourth transformer respectively, the source of the third transistor is connected to the source of the fourth transistor and grounded; the center tap of the primary coil of the fourth transformer is connected to the power supply voltage, and the center tap of the secondary coil of the fourth transformer is connected to the bias voltage; one end of the secondary coil of the fourth transformer is connected to the gate of the seventh transistor and one end of the eighth capacitor respectively, the drain of the seventh transistor is connected to one end of the seventh capacitor and one end of the primary coil of the sixth transformer respectively, and the other end of the secondary coil of the fourth transformer is connected to the eighth transistor respectively. The gate of the transistor is connected to the other end of the seventh capacitor, the drain of the eighth transistor is respectively connected to the other end of the eighth capacitor and the other end of the primary coil of the sixth transformer, the source of the seventh transistor is connected to the source of the eighth transistor and grounded; the center tap of the primary coil of the sixth transformer is connected to the power supply voltage, and the center tap of the secondary coil of the sixth transformer is connected to the bias voltage; one end of the secondary coil of the sixth transformer is respectively connected to the gate of the eleventh transistor and one end of the twelfth capacitor, the drain of the eleventh transistor is respectively connected to one end of the eleventh capacitor and the third input end of the inter-stage matching module, the other end of the secondary coil of the sixth transformer is respectively connected to the gate of the twelfth transistor and the other end of the eleventh capacitor, the drain of the twelfth transistor is respectively connected to the other end of the twelfth capacitor and the fourth input end of the inter-stage matching module, and the source of the eleventh transistor is connected to the source of the twelfth transistor and grounded.
[0008] As a limitation: the inter-stage matching module includes a first double-layer coupling transformer and a second double-layer coupling transformer, both of which are stacked by a top aluminum metal layer, a top copper metal layer and a second top copper metal layer, and their primary coils are both top copper metal layers, and their secondary coils are both double-layer structures formed by connecting the top aluminum metal layer and the second top copper metal layer in parallel; the two ends of the primary coil of the first double-layer coupling transformer are respectively connected to the two output ends of the pre-stage amplifier module, and the two ends of the primary coil of the second double-layer coupling transformer are respectively connected to the other two output ends of the pre-stage amplifier module, and the center tap of the primary coil of the first double-layer coupling transformer and the center tap of the primary coil of the second double-layer coupling transformer are both connected to the power supply voltage; the two ends of the secondary coil of the first double-layer coupling transformer are respectively connected to the two input ends of the power stage output module, and the two ends of the secondary coil of the second double-layer coupling transformer are respectively connected to the other two input ends of the power stage output module, and the center tap of the secondary coil of the first double-layer coupling transformer and the center tap of the secondary coil of the second double-layer coupling transformer are both connected to the bias voltage.
[0009] As a limitation: the power stage output module includes a thirteenth transistor, a fourteenth transistor, a thirteenth capacitor, a fourteenth capacitor, a fifteenth transistor, a sixteenth transistor, a fifteenth capacitor and a sixteenth capacitor, the gate of the thirteenth transistor is respectively connected to the first output end of the inter-stage matching module and one end of the thirteenth capacitor, the drain of the thirteenth transistor is respectively connected to one end of the fourteenth capacitor and the first input end of the power synthesis module, the gate of the fourteenth transistor is respectively connected to the second output end of the inter-stage matching module and the other end of the fourteenth capacitor, the drain of the fourteenth transistor is respectively connected to the other end of the thirteenth capacitor and the first input end of the power synthesis module The second input terminal is connected, the source of the thirteenth transistor is connected to the source of the fourteenth transistor and is grounded; the gate of the fifteenth transistor is respectively connected to the third output terminal of the inter-stage matching module and one end of the sixteenth capacitor, the drain of the fifteenth transistor is respectively connected to one end of the fifteenth capacitor and the third input terminal of the power synthesis module, the gate of the sixteenth transistor is respectively connected to the fourth output terminal of the inter-stage matching module and the other end of the fifteenth capacitor, the drain of the sixteenth transistor is respectively connected to the other end of the sixteenth capacitor and the fourth input terminal of the power synthesis module, and the source of the fifteenth transistor is connected to the source of the sixteenth transistor and is grounded.
[0010] As a limitation: the power synthesis module includes a third double-layer coupling transformer and a fourth double-layer coupling transformer, both of which are stacked by a top aluminum metal layer, a top copper metal layer and a second top copper metal layer, and their primary coils are both double-layer structures composed of a top aluminum metal layer and a second top copper metal layer connected in parallel, and their secondary coils are both top copper metal layers; the two ends of the primary coil of the third double-layer coupling transformer are respectively connected to the two output ends of the power stage output module, and the two ends of the primary coil of the fourth double-layer coupling transformer are respectively connected to the other two output ends of the power stage output module, and the center tap of the primary coil of the third double-layer coupling transformer and the center tap of the primary coil of the fourth double-layer coupling transformer are both connected to the power supply voltage; one end of the secondary coil of the third double-layer coupling transformer is grounded, and the other end of the secondary coil of the third double-layer coupling transformer is connected to one end of the secondary coil of the fourth double-layer coupling transformer and outputs the power-amplified RF signal, and the other end of the secondary coil of the fourth double-layer coupling transformer is grounded.
[0011] Due to the adoption of the above scheme, the present invention has the following beneficial effects compared with the prior art: The invention provides a W-band high-power amplifier based on CMOS technology. A power distribution module receives a radio frequency signal output by a radio frequency signal source to realize the distribution and input matching of two-way signals. The distributed two-way signals are sequentially transmitted to a power synthesis module through a pre-stage amplifier module, an inter-stage matching module and a power stage output module to realize signal synthesis output. The inter-stage matching module and the power synthesis module adopt a double-layer coupling transformer. Double-layer coupling is realized by adding a layer of metal on a group of coils, thereby improving the transformer coupling coefficient, reducing the insertion loss, and improving the gain, output power and efficiency of the power amplifier. The power distribution module, the inter-stage matching circuit in the pre-stage amplifier module, the inter-stage matching module and the power synthesis module all adopt transformers, which have simple structure, small area, high symmetry, high integration, good matching, and improved power transmission efficiency. The pre-stage amplifier module and the power stage output module all adopt differential common source amplifier circuits, which have good anti-interference ability, and adopt neutralizing capacitors to improve the gain and isolation of the circuit.
[0012] The invention is suitable for radio frequency signal power amplification. BRIEF DESCRIPTION OF THE DRAWINGS
[0013] The present invention is further described in detail below with reference to the accompanying drawings and specific embodiments.
[0014] Figure 1 A circuit diagram of a W-band high power amplifier based on CMOS technology according to an embodiment of the present invention; Figure 2 It is a schematic diagram of the structure of the first transformer and the second transformer according to an embodiment of the present invention; Figure 3 It is a schematic diagram of the structure of the third transformer, the fourth transformer, the fifth transformer and the sixth transformer according to the embodiment of the present invention; Figure 4 Schematic diagram of the structure of a first double-layer coupling transformer and a second double-layer coupling transformer according to an embodiment of the present invention; Figure 5 Schematic diagram of the structure of the third double-layer coupling transformer and the fourth double-layer coupling transformer according to the embodiment of the present invention; Figure 6 The loss comparison between the traditional structure transformer and the double-layer coupling transformer of the same size is shown; Figure 7 The figure is a comparison of the coupling coefficients between the traditional structure transformer and the double-layer coupling transformer of the same size; In the figure: 1. Power distribution module; 2. Pre-stage amplifier module; 21. First-stage common-source amplifier circuit; 22. First-stage inter-stage matching circuit; 23. Second-stage common-source amplifier circuit; 24. Second-stage inter-stage matching circuit; 25. Third-stage common-source amplifier circuit; 3. Inter-stage matching module; 4. Power stage output module; 5. Power synthesis module; 6. Top copper metal layer; 7. Second-top copper metal layer; 8. Top aluminum metal layer. DETAILED DESCRIPTION
[0015] The present invention is further described below in conjunction with embodiments, but those skilled in the art should understand that the present invention is not limited to the following embodiments, and any improvements and equivalent changes made based on the specific embodiments of the present invention are within the scope of protection of the claims of the present invention.
[0016] Embodiment A W-band high power amplifier based on CMOS technology A W-band high power amplifier based on CMOS technology, such as Figure 1 As shown, it includes a power distribution module 1, a pre-stage amplifier module 2, an inter-stage matching module 3, a power stage output module 4 and a power synthesis module 5, the input end of the power distribution module 1 receives the radio frequency signal RFIN output by the radio frequency signal source, the output end of the power distribution module 1 is connected to the input end of the pre-stage amplifier module 2, the output end of the pre-stage amplifier module 2 is connected to the input end of the inter-stage matching module 3, the output end of the inter-stage matching module 3 is connected to the input end of the power stage output module 4, the output end of the power stage output module 4 is connected to the input end of the power synthesis module 5, and the output end of the power synthesis module 5 outputs the radio frequency signal RFOUT after power amplification; the power distribution module 1 realizes the distribution and input matching of two-way signals, and the distributed two-way signals are transmitted to the power synthesis module 5 through the pre-stage amplifier module 2, the inter-stage matching module 3 and the power stage output module 4 in sequence to realize signal synthesis output; the inter-stage matching module 3 adopts a double-layer coupling transformer to realize impedance matching between the pre-stage amplifier module 2 and the power stage output module 4, and transmits the signal output by the pre-stage amplifier module 2 to the power stage output module 4; the power synthesis module 5 adopts a double-layer coupling transformer to realize output power synthesis and output matching.
[0017] In this embodiment, the power distribution module 1 includes a first transformer T1 and a second transformer T2. Figure 2As shown, the first transformer T1 and the second transformer T2 are traditional stacked structure transformers, which are stacked by a top copper metal layer 6 and a sub-top copper metal layer 7, and their primary coils are all the top copper metal layer 6, and the secondary coils are all the sub-top copper metal layer 7. The primary coils of the first transformer T1 and the second transformer T2 are connected to input the radio frequency signal RFIN; the pre-stage amplifier module 2 includes a first-stage common-source amplifier circuit 21, a first inter-stage matching circuit 22, a second-stage common-source amplifier circuit 23, a second inter-stage matching circuit 24 and a third-stage common-source amplifier circuit 25; the first-stage common-source amplifier circuit 21 includes a first transistor M1, a second transistor M2, a third transistor M3, a fourth transistor M4, a first capacitor C1, The second capacitor C2, the third capacitor C3 and the fourth capacitor C4, the first inter-stage matching circuit 22 includes a third transformer T3 and a fourth transformer T4, the second-stage common-source amplifier circuit 23 includes a fifth transistor M5, a sixth transistor M6, a seventh transistor M7, an eighth transistor M8, a fifth capacitor C5, a sixth capacitor C6, a seventh capacitor C7 and an eighth capacitor C8, the second inter-stage matching circuit 24 includes a fifth transformer T5 and a sixth transformer T6, and the third-stage common-source amplifier circuit 25 includes a ninth transistor M9, a tenth transistor M10, an eleventh transistor M11, a twelfth transistor M12, a ninth capacitor C9, a tenth capacitor C10, an eleventh capacitor C11 and a twelfth capacitor C12; Figure 3 As shown, the third transformer T3, the fourth transformer T4, the fifth transformer T5 and the sixth transformer T6 are conventional stacked structure transformers, which are stacked by a top copper metal layer 6 and a second top copper metal layer 7, wherein the primary coils are all the top copper metal layer 6, and the secondary coils are all the second top copper metal layer 7; the inter-stage matching module 3 includes a first double-layer coupling transformer T7 and a second double-layer coupling transformer T8, as shown in FIG. Figure 4 As shown, the first double-layer coupling transformer T7 and the second double-layer coupling transformer T8 are both stacked by a top aluminum metal layer 8, a top copper metal layer 6 and a second top copper metal layer 7, and the primary coils thereof are both the top copper metal layer 6, and the secondary coils are both double-layer structures formed by connecting the top aluminum metal layer 8 and the second top copper metal layer 7 in parallel; the power stage output module 4 includes a thirteenth transistor M13, a fourteenth transistor M14, a thirteenth capacitor C13, a fourteenth capacitor C14, a fifteenth transistor M15, a sixteenth transistor M16, a fifteenth capacitor C15 and a sixteenth capacitor C16; the power synthesis module 5 includes a third double-layer coupling transformer T9 and a fourth double-layer coupling transformer T10, as shown Figure 5As shown, the third double-layer coupling transformer T9 and the fourth double-layer coupling transformer T10 are both stacked by the top aluminum metal layer 8, the top copper metal layer 6 and the second top copper metal layer 7. The primary coils are both double-layer structures formed by the top aluminum metal layer 8 and the second top copper metal layer 7 connected in parallel, and the secondary coils are both the top copper metal layer 6. The secondary coils of the third double-layer coupling transformer T9 and the fourth double-layer coupling transformer T10 are connected to output the power-amplified RF signal RFOUT. At 90-100GHz, the performance of the traditional structure transformer and the double-layer coupling transformer of the same size are simulated, and the loss simulation results are shown in Figure 6 As shown in Figure 2, the double-layer coupling transformer has an approximately 0.2 dB loss improvement compared to the traditional structure transformer. The coupling coefficient simulation results are shown in Figure 2. Figure 7 As shown, the coupling coefficient of the double-layer coupling transformer is increased by about 0.15 compared with the traditional structure transformer.
[0018] like Figure 1As shown, the output end of the RF signal source is respectively connected to one end of the primary coil of the first transformer T1 and one end of the primary coil of the second transformer T2, the other end of the primary coil of the first transformer T1 and the other end of the primary coil of the second transformer T2 are both grounded, one end of the secondary coil of the first transformer T1 is respectively connected to the gate of the first transistor M1 and one end of the first capacitor C1, the drain of the first transistor M1 is respectively connected to one end of the second capacitor C2 and one end of the primary coil of the third transformer T3, the other end of the secondary coil of the first transformer T1 is respectively connected to the gate of the second transistor M2 and the other end of the second capacitor C2, the drain of the second transistor M2 is respectively connected to the other end of the first capacitor C1 and the other end of the primary coil of the third transformer T3 The source of the first transistor M1 is connected to the source of the second transistor M2 and is grounded; one end of the secondary coil of the third transformer T3 is respectively connected to the gate of the fifth transistor M5 and one end of the fifth capacitor C5, the drain of the fifth transistor M5 is respectively connected to one end of the sixth capacitor C6 and one end of the primary coil of the fifth transformer T5, the other end of the secondary coil of the third transformer T3 is respectively connected to the gate of the sixth transistor M6 and the other end of the sixth capacitor C6, the drain of the sixth transistor M6 is respectively connected to the other end of the fifth capacitor C5 and the other end of the primary coil of the fifth transformer T5, the source of the fifth transistor M5 is connected to the source of the sixth transistor M6 and is grounded; one end of the secondary coil of the fifth transformer T5 is respectively connected to the gate of the ninth transistor M5 and the other end of the sixth capacitor C6, the drain of the sixth transistor M6 is respectively connected to the other end of the fifth capacitor C5 and the other end of the primary coil of the fifth transformer T5, the source of the fifth transistor M5 is connected to the source of the sixth transistor M6 and is grounded; one end of the secondary coil of the fifth transformer T5 is respectively connected to the gate of the ninth transistor M5 and the other end of the sixth capacitor C6 The gate of the ninth transistor M9 is connected to one end of the ninth capacitor C9, the drain of the ninth transistor M9 is respectively connected to one end of the tenth capacitor C10 and one end of the primary coil of the first double-layer coupling transformer T7, the other end of the secondary coil of the fifth transformer T5 is respectively connected to the gate of the tenth transistor M10 and the other end of the tenth capacitor C10, the drain of the tenth transistor M10 is respectively connected to the other end of the ninth capacitor C9 and the other end of the primary coil of the first double-layer coupling transformer T7, the source of the ninth transistor M9 is connected to the source of the tenth transistor M10 and is grounded; one end of the secondary coil of the first double-layer coupling transformer T7 is respectively connected to the gate of the thirteenth transistor M13 and one end of the thirteenth capacitor C13, the drain of the thirteenth transistor M13 is respectively connected to the gate of the thirteenth transistor M13 and one end of the thirteenth capacitor C13, connected to one end of a fourteenth capacitor C14 and one end of a primary coil of a third double-layer coupling transformer T9, the other end of a secondary coil of a first double-layer coupling transformer T7 is respectively connected to a gate of a fourteenth transistor M14 and the other end of a fourteenth capacitor C14, the drain of the fourteenth transistor M14 is respectively connected to the other end of a thirteenth capacitor C13 and the other end of a primary coil of the third double-layer coupling transformer T9, the source of the thirteenth transistor M13 and the fourteenth transistor M14 are connected and grounded; a center tap of the secondary coil of the first transformer T1, a center tap of the secondary coil of the third transformer T3, a center tap of the secondary coil of the fifth transformer T5 and a center tap of the secondary coil of the first double-layer coupling transformer T7 are all connected to a bias voltage VB;The center tap of the primary coil of the third transformer T3, the center tap of the primary coil of the fifth transformer T5, the center tap of the primary coil of the first double-layer coupling transformer T7, and the center tap of the primary coil of the third double-layer coupling transformer T9 are all connected to the power supply voltage AVDD. One end of the secondary coil of the second transformer T2 is connected to the gate of the third transistor M3 and one end of the fourth capacitor C4, respectively. The drain of the third transistor M3 is connected to one end of the third capacitor C3 and one end of the primary coil of the fourth transformer T4, respectively. The other end of the secondary coil of the second transformer T2 is connected to the gate of the fourth transistor M4 and the other end of the third capacitor C3, respectively. The drain of the fourth transistor M4 is connected to the other end of the fourth capacitor C4 and the other end of the primary coil of the fourth transformer T4, respectively. The source of the third transistor M3 is connected to the source of the fourth transistor M4 and is grounded; one end of the secondary coil of the fourth transformer T4 is connected to the gate of the seventh transistor M7 and one end of the eighth capacitor C8, respectively. The drain of the seventh transistor M7 is connected to one end of the seventh capacitor C7 and one end of the primary coil of the sixth transformer T6 respectively; the other end of the secondary coil of the fourth transformer T4 is connected to the gate of the eighth transistor M8 and the other end of the seventh capacitor C7 respectively; the drain of the eighth transistor M8 is connected to the other end of the eighth capacitor C8 and the other end of the primary coil of the sixth transformer T6 respectively; the source of the seventh transistor M7 is connected to the source of the eighth transistor M8 and is grounded; one end of the secondary coil of the sixth transformer T6 is connected to the gate of the eleventh transistor M11 and one end of the twelfth capacitor C12 respectively; the drain of the eleventh transistor M11 is connected to one end of the eleventh capacitor C11 and the second One end of the primary coil of the double-layer coupling transformer T8 is connected, the other end of the secondary coil of the sixth transformer T6 is respectively connected to the gate of the twelfth transistor M12 and the other end of the eleventh capacitor C11, the drain of the twelfth transistor M12 is respectively connected to the other end of the twelfth capacitor C12 and the other end of the primary coil of the second double-layer coupling transformer T8, the source of the eleventh transistor M11 is connected to the source of the twelfth transistor M12 and is grounded; one end of the secondary coil of the second double-layer coupling transformer T8 is respectively connected to the gate of the fifteenth transistor M15 and one end of the sixteenth capacitor C16, the drain of the fifteenth transistor M15 is respectively connected to one end of the fifteenth capacitor C15 and the fourth double-layer coupling transformer T8. One end of the primary coil of the transformer T10 is connected, one end of the secondary coil of the second double-layer coupling transformer T8 is respectively connected to the gate of the sixteenth transistor M16 and the other end of the fifteenth capacitor C15, the drain of the sixteenth transistor M16 is respectively connected to the other end of the sixteenth capacitor C16 and the other end of the primary coil of the fourth double-layer coupling transformer T10, the source of the fifteenth transistor M15 is connected to the source of the sixteenth transistor M16 and is grounded; the center tap of the secondary coil of the second transformer T2, the center tap of the secondary coil of the fourth transformer T4, the center tap of the secondary coil of the sixth transformer T6 and the center tap of the secondary coil of the second double-layer coupling transformer T8 are all connected to the bias voltage VB;The center tap of the primary coil of the fourth transformer T4, the center tap of the primary coil of the sixth transformer T6, the center tap of the primary coil of the second double-layer coupling transformer T8, and the center tap of the primary coil of the fourth double-layer coupling transformer T10 are all connected to the power supply voltage AVDD. One end of the secondary coil of the third double-layer coupling transformer T9 is grounded, the other end of the secondary coil of the third double-layer coupling transformer T9 is connected to one end of the secondary coil of the fourth double-layer coupling transformer T10 and outputs the power-amplified RF signal RFOUT, and the other end of the secondary coil of the fourth double-layer coupling transformer T10 is grounded. ;
[0019] The W-band high-power amplifier based on CMOS technology in this embodiment is provided with a power distribution module 1, a pre-stage amplifier module 2, an inter-stage matching module 3, a power stage output module 4 and a power synthesis module 5. The power distribution module 1, the inter-stage matching circuit in the pre-stage amplifier module 2, the inter-stage matching module 3 and the power synthesis module 5 all adopt transformers, which have simple structure, small area, high symmetry, high integration, good matching, and improved power transmission efficiency. The circuit bias and the power supply voltage AVDD are both provided through the center tap of the transformer. In order to obtain high output power and ensure that the MOSFET drain is not broken down during normal operation, the power supply voltage AVDD adopts the process standard withstand voltage value of 1V, and the bias voltage VB takes 0.7V; the pre-stage amplifier module 2 and the power stage output module 4 both adopt differential common source amplifier circuits with good anti-interference ability, and at the same time adopt neutralizing capacitors to improve the gain and isolation of the circuit; the transistor size in the pre-stage amplifier module 2 is 30μm to improve the small signal gain, and the transistor size in the power stage output module 4 is 2*30μm to achieve an output power of 15dBm. When the operating frequency is 90GHz, the input capacitance and output capacitance of the power stage output module 4 are approximately 50fF. At this time, the required resonant inductance value is approximately 40pH. At this time, the size of the transformer coil in the interstage matching module 3 and the power synthesis module 5 is required to be very small, which will lead to large transformer losses. At the same time, the transformer in the power synthesis module 5 is located at the end of the power amplifier. The loss of the transformer in the interstage matching module 3 and the power synthesis module 5 will seriously affect the gain, power and efficiency of the power amplifier. Therefore, the interstage matching module 3 and the power synthesis module 5 adopt a double-layer coupling transformer. By adding a layer of metal to a group of coils to achieve double-layer coupling, the transformer coupling coefficient is improved, the insertion loss is reduced, and the gain, output power and efficiency of the power amplifier are improved.
Claims
1. A W-band high power amplifier based on CMOS technology, characterized in that: It includes a power distribution module, a pre-stage amplifier module, an inter-stage matching module, a power level output module and a power synthesis module. The input end of the power distribution module receives the radio frequency signal output by the radio frequency signal source, the output end of the power distribution module is connected to the input end of the pre-stage amplifier module, the output end of the pre-stage amplifier module is connected to the input end of the inter-stage matching module, the output end of the inter-stage matching module is connected to the input end of the power level output module, the output end of the power level output module is connected to the input end of the power synthesis module, and the output end of the power synthesis module outputs the radio frequency signal after power amplification; the inter-stage matching module adopts a double-layer coupling transformer to realize impedance matching between the pre-stage amplifier module and the power level output module, and transmits the signal output by the pre-stage amplifier module to the power level output module; the power synthesis module adopts a double-layer coupling transformer to realize output power synthesis and output matching.
2. The W-band high power amplifier based on CMOS technology according to claim 1, characterized in that: The power distribution module includes a first transformer and a second transformer. The output end of the radio frequency signal source is respectively connected to one end of the primary coil of the first transformer and one end of the primary coil of the second transformer. The other end of the primary coil of the first transformer and the other end of the primary coil of the second transformer are both grounded. The two ends of the secondary coil of the first transformer are respectively connected to the two input ends of the pre-stage amplifier module, and the two ends of the secondary coil of the second transformer are respectively connected to the other two input ends of the pre-stage amplifier module. The center tap of the secondary coil of the first transformer and the center tap of the secondary coil of the second transformer are both connected to the bias voltage.
3. A W-band high power amplifier based on CMOS technology according to claim 1 or 2, characterized in that: The pre-stage amplifier module includes a first-stage common-source amplifier circuit, a first-stage matching circuit, a second-stage common-source amplifier circuit, a second-stage matching circuit and a third-stage common-source amplifier circuit; the first-stage common-source amplifier circuit includes a first transistor, a second transistor, a third transistor, a fourth transistor, a first capacitor, a second capacitor, a third capacitor and a fourth capacitor, the first-stage matching circuit includes a third transformer and a fourth transformer, the second-stage common-source amplifier circuit includes a fifth transistor, a sixth transistor, a seventh transistor, an eighth transistor, a fifth capacitor, a sixth capacitor, a seventh capacitor and an eighth capacitor, the second-stage matching circuit includes a fifth transformer and a sixth transformer, and the third-stage common-source amplifier circuit includes a ninth transistor, a tenth transistor, an eleventh transistor, a twelfth transistor, a ninth capacitor, a tenth capacitor, an eleventh capacitor and a twelfth capacitor; The gate of the first transistor is respectively connected to the first output end of the power distribution module and one end of the first capacitor, the drain of the first transistor is respectively connected to one end of the second capacitor and one end of the primary coil of the third transformer, the gate of the second transistor is respectively connected to the second output end of the power distribution module and the other end of the second capacitor, the drain of the second transistor is respectively connected to the other end of the first capacitor and the other end of the primary coil of the third transformer, the source of the first transistor is connected to the source of the second transistor and is grounded; the center tap of the primary coil of the third transformer is connected to the power supply voltage, and the center tap of the secondary coil of the third transformer is connected to the bias voltage; One end of the secondary coil of the third transformer is respectively connected to the gate of the fifth transistor and one end of the fifth capacitor, the drain of the fifth transistor is respectively connected to one end of the sixth capacitor and one end of the primary coil of the fifth transformer, the other end of the secondary coil of the third transformer is respectively connected to the gate of the sixth transistor and the other end of the sixth capacitor, the drain of the sixth transistor is respectively connected to the other end of the fifth capacitor and the other end of the primary coil of the fifth transformer, the source of the fifth transistor is connected to the source of the sixth transistor and is grounded; the center tap of the primary coil of the fifth transformer is connected to the power supply voltage, and the center tap of the secondary coil of the fifth transformer is connected to the bias voltage; One end of the secondary coil of the fifth transformer is respectively connected to the gate of the ninth transistor and one end of the ninth capacitor, the drain of the ninth transistor is respectively connected to one end of the tenth capacitor and the first input end of the inter-stage matching module, the other end of the secondary coil of the fifth transformer is respectively connected to the gate of the tenth transistor and the other end of the tenth capacitor, the drain of the tenth transistor is respectively connected to the other end of the ninth capacitor and the second input end of the inter-stage matching module, and the source of the ninth transistor is connected to the source of the tenth transistor and is grounded; The gate of the third transistor is respectively connected to the third output terminal of the power distribution module and one end of the fourth capacitor, the drain of the third transistor is respectively connected to one end of the third capacitor and one end of the primary coil of the fourth transformer, the gate of the fourth transistor is respectively connected to the fourth output terminal of the power distribution module and the other end of the third capacitor, the drain of the fourth transistor is respectively connected to the other end of the fourth capacitor and the other end of the primary coil of the fourth transformer, the source of the third transistor is connected to the source of the fourth transistor and is grounded; the center tap of the primary coil of the fourth transformer is connected to the power supply voltage, and the center tap of the secondary coil of the fourth transformer is connected to the bias voltage; One end of the secondary coil of the fourth transformer is respectively connected to the gate of the seventh transistor and one end of the eighth capacitor, the drain of the seventh transistor is respectively connected to one end of the seventh capacitor and one end of the primary coil of the sixth transformer, the other end of the secondary coil of the fourth transformer is respectively connected to the gate of the eighth transistor and the other end of the seventh capacitor, the drain of the eighth transistor is respectively connected to the other end of the eighth capacitor and the other end of the primary coil of the sixth transformer, the source of the seventh transistor is connected to the source of the eighth transistor and grounded; the center tap of the primary coil of the sixth transformer is connected to the power supply voltage, and the center tap of the secondary coil of the sixth transformer is connected to the bias voltage; one end of the secondary coil of the sixth transformer is respectively connected to the gate of the eleventh transistor and one end of the twelfth capacitor, the drain of the eleventh transistor is respectively connected to one end of the eleventh capacitor and the third input end of the inter-stage matching module, the other end of the secondary coil of the sixth transformer is respectively connected to the gate of the twelfth transistor and the other end of the eleventh capacitor, the drain of the twelfth transistor is respectively connected to the other end of the twelfth capacitor and the fourth input end of the inter-stage matching module, and the source of the eleventh transistor is connected to the source of the twelfth transistor and grounded.
4. A W-band high power amplifier based on CMOS technology according to claim 1 or 2, characterized in that: The inter-stage matching module includes a first double-layer coupling transformer and a second double-layer coupling transformer. The first double-layer coupling transformer and the second double-layer coupling transformer are both stacked by a top aluminum metal layer, a top copper metal layer and a second top copper metal layer. The primary coils are both the top copper metal layer, and the secondary coils are both double-layer structures formed by connecting the top aluminum metal layer and the second top copper metal layer in parallel. The two ends of the primary coil of the first double-layer coupling transformer are respectively connected to the two output ends of the pre-stage amplifier module, and the two ends of the primary coil of the second double-layer coupling transformer are respectively connected to the other two output ends of the pre-stage amplifier module. The center tap of the primary coil of the first double-layer coupling transformer and the center tap of the primary coil of the second double-layer coupling transformer are both connected to the power supply voltage. The two ends of the secondary coil of the first double-layer coupling transformer are respectively connected to the two input ends of the power stage output module, and the two ends of the secondary coil of the second double-layer coupling transformer are respectively connected to the other two input ends of the power stage output module. The center tap of the secondary coil of the first double-layer coupling transformer and the center tap of the secondary coil of the second double-layer coupling transformer are both connected to the bias voltage.
5. A W-band high power amplifier based on CMOS technology according to claim 1 or 2, characterized in that: The power stage output module includes a thirteenth transistor, a fourteenth transistor, a thirteenth capacitor, a fourteenth capacitor, a fifteenth transistor, a sixteenth transistor, a fifteenth capacitor and a sixteenth capacitor, the gate of the thirteenth transistor is respectively connected to the first output end of the inter-stage matching module and one end of the thirteenth capacitor, the drain of the thirteenth transistor is respectively connected to one end of the fourteenth capacitor and the first input end of the power synthesis module, the gate of the fourteenth transistor is respectively connected to the second output end of the inter-stage matching module and the other end of the fourteenth capacitor, the drain of the fourteenth transistor is respectively connected to the other end of the thirteenth capacitor and the second input end of the power synthesis module The input end is connected, the source of the thirteenth transistor is connected to the source of the fourteenth transistor and is grounded; the gate of the fifteenth transistor is respectively connected to the third output end of the inter-stage matching module and one end of the sixteenth capacitor, the drain of the fifteenth transistor is respectively connected to one end of the fifteenth capacitor and the third input end of the power synthesis module, the gate of the sixteenth transistor is respectively connected to the fourth output end of the inter-stage matching module and the other end of the fifteenth capacitor, the drain of the sixteenth transistor is respectively connected to the other end of the sixteenth capacitor and the fourth input end of the power synthesis module, and the source of the fifteenth transistor is connected to the source of the sixteenth transistor and is grounded.
6. A W-band high power amplifier based on CMOS technology according to claim 1 or 2, characterized in that: The power synthesis module includes a third double-layer coupling transformer and a fourth double-layer coupling transformer. The third double-layer coupling transformer and the fourth double-layer coupling transformer are both stacked by a top aluminum metal layer, a top copper metal layer and a second top copper metal layer. The primary coils thereof are both double-layer structures formed by connecting the top aluminum metal layer and the second top copper metal layer in parallel, and the secondary coils are both top copper metal layers. The two ends of the primary coil of the third double-layer coupling transformer are respectively connected to the two output ends of the power stage output module, and the two ends of the primary coil of the fourth double-layer coupling transformer are respectively connected to the other two output ends of the power stage output module. The center tap of the primary coil of the third double-layer coupling transformer and the center tap of the primary coil of the fourth double-layer coupling transformer are both connected to the power supply voltage. One end of the secondary coil of the third double-layer coupling transformer is grounded, and the other end of the secondary coil of the third double-layer coupling transformer is connected to one end of the secondary coil of the fourth double-layer coupling transformer and outputs the radio frequency signal after power amplification, and the other end of the secondary coil of the fourth double-layer coupling transformer is grounded.