Substrate processing method and substrate processing apparatus

Abstract

The present disclosure provides a substrate processing method and a substrate processing apparatus capable of improving productivity. The substrate processing method includes: a step (A) of preparing a substrate having an electrode array in which a plurality of electrodes are arranged on a surface of the substrate; a step (B) for forming a light-emitting layer, an electrode layer, and a sealing layer over the entire electrode array; a step (C) for forming, on the sealing layer, a mask having a first thickness on one type of electrode among the plurality of electrodes; and a step (D) of forming a laminate in which the one type of electrode, the light-emitting layer, the electrode layer, and the sealing layer are laminated by performing an etching process on the substrate using the mask.

Description

Technical Field

[0001] The present disclosure relates to a substrate processing method and a substrate processing device. Background Art

[0002] Patent document 1 discloses a sub-pixel circuit and a method for forming the sub-pixel circuit that can be used for a display such as an organic light emitting diode display. The sub-pixel is formed by applying an organic EL (Electro Luminescence) layer using an overhang structure formed on an adjacent PDL (Pixel Defining Layer) structure.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: U.S. Patent Application Publication No. 2022 / 0077257 Summary of the invention

[0006] Problem that the invention aims to solve

[0007] In one aspect, the present disclosure provides a substrate processing method and a substrate processing apparatus that improve productivity.

[0008] Solutions for solving problems

[0009] In order to solve the above-mentioned problems, according to one embodiment, a substrate processing method can be provided, which includes the following steps: step (A), preparing a substrate, wherein the substrate has an electrode array in which a plurality of electrodes are arranged on the surface of the substrate; step (B), forming a light-emitting layer, an electrode layer and a sealing layer on the entire electrode array; step (C), forming a mask having a first thickness on one type of electrode among the plurality of electrodes on the sealing layer; and step (D), using the mask to perform etching on the substrate to form a stacked body having the one type of electrode, the light-emitting layer, the electrode layer and the sealing layer stacked thereon.

[0010] Effects of the Invention

[0011] According to one aspect, a substrate processing method and a substrate processing apparatus that improve productivity can be provided. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 This is a flowchart showing an example of the substrate processing method according to the first embodiment.

[0013] Figure 2 This is an example of a schematic cross-sectional view of a substrate in each step.

[0014] Figure 3 This is an example of a schematic cross-sectional view of a substrate in each step.

[0015] Figure 4 This is an example of a schematic cross-sectional view of a substrate in each step.

[0016] Figure 5 This is an example of a schematic cross-sectional view of a substrate in each step.

[0017] Figure 6 This is an example of a schematic cross-sectional view of a substrate in each step.

[0018] Figure 7 This is an example of a schematic cross-sectional view of a substrate in each step.

[0019] Figure 8 This is an example of a schematic cross-sectional view of a substrate in each step.

[0020] Fig. 9 This is an example of a schematic cross-sectional view of a substrate in each step.

[0021] Fig.10 This is an example of a schematic cross-sectional view of a substrate in each step.

[0022] Fig.11 This is an example of a schematic cross-sectional view of a substrate in each step.

[0023] Fig.12 This is an example of a schematic cross-sectional view of a substrate in each step.

[0024] Fig.13 This is an example of a schematic cross-sectional view of a substrate in each step.

[0025] Fig.14 This is an example of a schematic cross-sectional view of a substrate in each step.

[0026] Fig.15 This is an example of a schematic cross-sectional view of a substrate in each step.

[0027] Fig.16 This is another example of a schematic cross-sectional view of the substrate in the step of forming the first stack.

[0028] Fig.17 This is a flowchart showing an example of a substrate processing method according to the second embodiment.

[0029] Fig.18 This is an example of a schematic cross-sectional view of a substrate in each step.

[0030] Fig.19 This is an example of a schematic cross-sectional view of a substrate in each step.

[0031] Fig. 20This is an example of a schematic cross-sectional view of a substrate in each step.

[0032] Fig.21 This is an example of a schematic cross-sectional view of a substrate in each step.

[0033] Fig. 22 This is an example of a schematic cross-sectional view of a substrate in each step.

[0034] Fig.23 This is an example of a schematic cross-sectional view of a substrate in each step.

[0035] Fig.24 This is an example of a schematic cross-sectional view of a substrate in each step.

[0036] Fig.25 This is an example of a schematic cross-sectional view of a substrate in each step.

[0037] Fig.26 This is an example of a schematic cross-sectional view of a substrate in each step.

[0038] Fig. 27 This is an example of a schematic cross-sectional view of a substrate in each step.

[0039] Fig.28 This is an example of a schematic cross-sectional view of a substrate in each step.

[0040] Fig.29 This is an example of a schematic cross-sectional view of a substrate in each step.

[0041] Fig.30 This is an example of a schematic cross-sectional view of a substrate in each step.

[0042] Fig.31 This is an example of a schematic cross-sectional view of a substrate in each step.

[0043] Fig.32 This is an example of a schematic cross-sectional view of a substrate in each step.

[0044] Fig.33 This is an example of a schematic cross-sectional view of a substrate in each step.

[0045] Fig.34 This is an example of a schematic cross-sectional view of a substrate in each step.

[0046] Fig.35 This is another example of a schematic cross-sectional view of the substrate in the step of forming the first stack.

[0047] Fig.36 This is an example of a plan view showing the structure of the first substrate processing system.

[0048] Fig.37FIG. 1 is an example of a plan view showing the structure of the second substrate processing system. DETAILED DESCRIPTION

[0049] In the technique of Patent Document 1, the number of steps in forming the overhang structure may increase due to an increase in the number of photolithography processes, and the anode electrode may deteriorate due to the influence of moisture during wet etching and oxygen in the atmosphere.

[0050] Hereinafter, various exemplary embodiments will be described in detail with reference to the accompanying drawings. In addition, in each of the drawings, the same or corresponding parts are denoted by the same reference numerals.

[0051] <First Embodiment>

[0052] use Figures 1 to 15 An example of a substrate processing method for forming a plurality of types of organic EL elements on a substrate will be described. Figure 1 This is a flowchart showing an example of the substrate processing method according to the first embodiment. Figures 2 to 15 This is an example of a schematic cross-sectional view of a substrate in each step.

[0053] Here, a substrate processing method for forming three types of organic EL elements on a substrate is described as an example. Specifically, an organic EL element emitting red light (R), an organic EL element emitting green light (G), and an organic EL element emitting blue light (B) are formed on a substrate as an example. In addition, an organic EL element is composed of an anode electrode, a light-emitting layer, and a cathode electrode stacked together.

[0054] Furthermore, the types of organic EL elements formed on the substrate are not limited to three types, and may be one type or two or more types.

[0055] In step S101 , a substrate is prepared.

[0056] Figure 2 This is an example of a cross-sectional schematic diagram of the substrate prepared in step S101. The substrate has a substrate 300 and an electrode array 310. The substrate 300 is composed of, for example, a glass plate. In addition, the substrate 300 is not limited thereto, and may also be a ceramic plate, a plastic plate, a metal plate, a silicon plate, etc., and there is no limitation on the material. In addition, the substrate 300 may also be composed of a material having insulating properties. In addition, the substrate 300 may also be composed of a material having light transmittance. In addition, the shape of the substrate (substrate 300) may be rectangular, circular, etc., and there is no limitation on the shape.

[0057] The electrode array 310 has a plurality of anode electrodes 311, 312, 313. Here, the electrode array 310 includes a first anode electrode 311, a second anode electrode 312, and a third anode electrode 313. The plurality of anode electrodes 311, 312, 313 are made of, for example, indium tin oxide (ITO). In addition, the plurality of anode electrodes 311, 312, 313 are not limited thereto, and a layer made of silver or aluminum may be added between the substrate 300 and the anode electrodes 311, 312, 313 as a base. In addition, the plurality of anode electrodes 311, 312, 313 may also be made of a conductive material. In addition, the plurality of anode electrodes 311, 312, 313 may also be made of a light-transmitting material. In addition, the plurality of anode electrodes 311, 312, 313 are arranged at different positions on the surface of the substrate (substrate 300).

[0058] In addition, although the description is given assuming that a substrate having the electrode array 310 is prepared in step S101, the present invention is not limited thereto. Step S101 may include a step of forming the electrode array 310 on the substrate (base material 300).

[0059] In step S102, a first light-emitting layer 321 is formed on the substrate. Here, a continuous film of the first light-emitting layer 321 is formed in a manner covering the entire electrode array 310. In addition, the first light-emitting layer 321 includes an organic EL, which is a light-emitting layer (organic EL layer) that emits light of a specific color (for example, red (R)) by applying a voltage between electrodes (a first anode electrode 311, a first cathode electrode 331 described later). In addition, the formation process of the first light-emitting layer 321 is performed, for example, by vacuum evaporation or the like.

[0060] In step S103, a first cathode electrode 331 is formed on the substrate. Here, a continuous film of the first cathode electrode 331 is formed on the first light-emitting layer 321. The first cathode electrode 331 is composed of, for example, ITO, IZO (Indium Zinc Oxide), etc., and a layer composed of MgAg can be added between the first light-emitting layer 321 and the first cathode electrode 331 as a substrate. In addition, in the case of a cavity structure, MgAg can also be used as a cathode electrode material. In addition, the formation process of the first cathode electrode 331 is performed by any film forming process such as vacuum evaporation, PVD (Physical Vapor Deposition) film forming, CVD (Chemical Vapor Deposition) film forming, ALD (Atomic Layer Deposition) film forming, or a combination thereof.

[0061] In step S104, a first sealing layer 341 is formed on the substrate. Here, a continuous film of the first sealing layer 341 is formed on the first cathode electrode 331. The first sealing layer 341 includes a first inorganic insulating film. The first inorganic insulating film is, for example, composed of any one of a silicon oxide film (SiO), a silicon nitride film (SiN), a silicon oxynitride film (SiON), and aluminum oxide (AlO), or a combination thereof. In addition, the formation process of the first sealing layer 341 is performed, for example, by any film forming process of vacuum evaporation, PVD film forming, CVD film forming, ALD film forming, or a combination thereof. In addition, the formation process of the first light emitting layer 321, the first cathode electrode 331, and the first sealing layer 341 is performed in a vacuum atmosphere.

[0062] Figure 3 1 is an example of a schematic cross-sectional view of a substrate after the process of step S104. A first light-emitting layer 321 is formed on the electrode array 310 (first anode electrode 311, second anode electrode 312, third anode electrode 313). In addition, a first cathode electrode 331 is formed on the first light-emitting layer 321. In addition, a first sealing layer 341 is formed on the first cathode electrode 331.

[0063] Furthermore, the plurality of anode electrodes 311, 312, 313, the first light emitting layer 321, and the first cathode electrode 331 are sealed by the first sealing layer 341. Thus, the plurality of anode electrodes 311, 312, 313, the first light emitting layer 321, and the first cathode electrode 331 are prevented from contacting oxygen, moisture, and the like when the substrate is exposed to the atmosphere.

[0064] In step S105, a first mask 351 is formed on the substrate. Here, the first mask 351 is formed on the substrate by photolithography. The photolithography includes a resist forming process, an exposure process, and a development process. In the resist forming process, a photoresist is formed on the substrate. In the exposure process, the substrate on which the photoresist is formed is irradiated with light such as ultraviolet (UV: Ultraviolet) and deep ultraviolet (DUV: Deep Ultraviolet) through a photomask. As a result, an exposed portion irradiated with light and an unexposed portion not irradiated with light are formed in the photoresist. In the development process, the first mask 351 is formed using the photoresist. In addition, in the case of a positive photoresist, the first mask 351 is formed by removing the photoresist of the exposed portion and leaving the photoresist of the unexposed portion. On the other hand, in the case of a negative photoresist, the first mask 351 is formed by removing the photoresist of the unexposed portion and leaving the photoresist of the exposed portion. In addition, the formation process of the first mask 351 is performed in an air atmosphere.

[0065] Figure 41 is an example of a schematic cross-sectional view of the substrate after the process of step S105 . The first mask 351 is selectively formed on the first anode electrode 311 . On the other hand, the first mask 351 is not formed on the second anode electrode 312 and the third anode electrode 313 .

[0066] In step S106, the substrate is subjected to etching. Here, the first sealing layer 341, the first cathode electrode 331, and the first light emitting layer 321 are etched through the first mask 351 by plasma etching. The etching is dry etching and is performed in a vacuum atmosphere.

[0067] Figure 5 31 is an example of a schematic cross-sectional view of a substrate after the process of step S106. The first sealing layer 341, the first cathode electrode 331, and the first light-emitting layer 321 on the second anode electrode 312 and the third anode electrode 313 are removed. On the other hand, the first light-emitting layer 321, the first cathode electrode 331, and the first sealing layer 341 covered by the first mask 351 on the first anode electrode 311 are left. In this way, a first stack (organic EL element) having the first anode electrode 311, the first light-emitting layer 321, the first cathode electrode 331, and the first sealing layer 341 stacked thereon is formed on the substrate through the processes of step S102 to step S106. In addition, in the etching process, the entire first mask 351 is removed by ashing.

[0068] In step S107, the second light-emitting layer 322 is formed on the substrate. Here, a continuous film of the second light-emitting layer 322 is formed in a manner covering the entire electrode array 310. In addition, the second light-emitting layer 322 includes an organic EL, which is a light-emitting layer (organic EL layer) that emits light of a specific color (for example, green (G)) by applying a voltage between electrodes (the second anode electrode 312, the second cathode electrode 332 described later). In addition, the formation process of the second light-emitting layer 322 is performed, for example, by vacuum evaporation or the like.

[0069] In step S108, a second cathode electrode 332 is formed on the substrate. Here, a continuous film of the second cathode electrode 332 is formed on the second light-emitting layer 322. The second cathode electrode 332 is composed of, for example, ITO, IZO, etc., and a layer composed of MgAg may be added between the second light-emitting layer 322 and the second cathode electrode 332 as a substrate. In addition, in the case of having a cavity structure, MgAg may also be used as a cathode electrode material. In addition, the second cathode electrode 332 is formed by, for example, vacuum evaporation, PVD film formation, CVD film formation, ALD film formation, or any film formation process or a combination thereof.

[0070] In step S109, a second sealing layer 342 is formed on the substrate. Here, a continuous film of the second sealing layer 342 is formed on the second cathode electrode 332. The second sealing layer 342 includes a second inorganic insulating film. The second inorganic insulating film is, for example, composed of any one of a silicon oxide film (SiO), a silicon nitride film (SiN), a silicon oxynitride film (SiON), an aluminum oxide (AlO), etc., or a combination thereof. In addition, the formation process of the second sealing layer 342 is performed by any film forming process such as vacuum evaporation, PVD film forming, CVD film forming, ALD film forming, or a combination thereof. In addition, the formation process of the second light emitting layer 322, the second cathode electrode 332, and the second sealing layer 342 is performed in a vacuum atmosphere.

[0071] Figure 6 1 is an example of a schematic cross-sectional view of a substrate after the process of step S109. A second light-emitting layer 322 is formed on the electrode array 310 (first anode electrode 311, second anode electrode 312, third anode electrode 313). In addition, a second cathode electrode 332 is formed on the second light-emitting layer 322. In addition, a second sealing layer 342 is formed on the second cathode electrode 332. In addition, the second light-emitting layer 322, the second cathode electrode 332, and the second sealing layer 342 are also formed on the first stack (first anode electrode 311, first light-emitting layer 321, first cathode electrode 331, and first sealing layer 341).

[0072] Furthermore, the plurality of anode electrodes 311, 312, 313, the first light-emitting layer 321 to the second light-emitting layer 322, and the first cathode electrodes 331 to the second cathode electrodes 332 are sealed by the second sealing layer 342. Thus, when the substrate is exposed to the atmosphere, the plurality of anode electrodes 311, 312, 313, the first light-emitting layer 321 to the second light-emitting layer 322, and the first cathode electrodes 331 to the second cathode electrodes 332 are prevented from contacting with oxygen, moisture, and the like.

[0073] In step S110, a second mask 352 is formed on the substrate. Here, the second mask 352 is formed on the substrate by photolithography. The photolithography includes a resist forming process, an exposure process, and a development process. In the resist forming process, a photoresist is formed on the substrate. In the exposure process, light is irradiated to the substrate formed with the photoresist via a photomask. As a result, an exposed portion irradiated with light and an unexposed portion not irradiated with light are formed in the photoresist. In the development process, the second mask 352 is formed using the photoresist. In addition, in the case of a positive photoresist, the second mask 352 is formed by removing the photoresist of the exposed portion and leaving the photoresist of the unexposed portion. On the other hand, in the case of a negative photoresist, the second mask 352 is formed by removing the photoresist of the unexposed portion and leaving the photoresist of the exposed portion. In addition, the formation process of the second mask 352 is performed in an atmospheric atmosphere.

[0074] Figure 7 FIG. 3 is an example of a schematic cross-sectional view of the substrate after the process of step S110 . The second mask 352 is selectively formed on the second anode electrode 312 . On the other hand, the second mask 352 is not formed on the first anode electrode 311 and the third anode electrode 313 .

[0075] In step S111, the substrate is subjected to etching. Here, the second sealing layer 342, the second cathode electrode 332, and the second light emitting layer 322 are etched through the second mask 352 by plasma etching. The etching is dry etching and is performed in a vacuum atmosphere.

[0076] Figure 8 1 is an example of a schematic cross-sectional view of a substrate after the process of step S111. The second sealing layer 342, the second cathode electrode 332, and the second light-emitting layer 322 on the first stack (first anode electrode 311) and the third anode electrode 313 are removed. On the other hand, the second light-emitting layer 322, the second cathode electrode 332, and the second sealing layer 342 covered by the second mask 352 on the second anode electrode 312 are left. In this way, by processing from step S107 to step S111, a second stack (organic EL element) stacked with the second anode electrode 312, the second light-emitting layer 322, the second cathode electrode 332, and the second sealing layer 342 is formed on the substrate. In addition, in the etching process, the entire second mask 352 is removed by ashing.

[0077] In step S112, the third light-emitting layer 323 is formed on the substrate. Here, a continuous film of the third light-emitting layer 323 is formed in a manner covering the entire electrode array 310. In addition, the third light-emitting layer 323 includes an organic EL, which is a light-emitting layer (organic EL layer) that emits light of a specific color (for example, blue (B)) by applying a voltage between electrodes (third anode electrode 313, third cathode electrode 333 described later). In addition, the formation process of the third light-emitting layer 323 is performed, for example, by vacuum evaporation or the like.

[0078] In step S113, a third cathode electrode 333 is formed on the substrate. Here, a continuous film of the third cathode electrode 333 is formed on the third light-emitting layer 323. The third cathode electrode 333 is composed of, for example, ITO, IZO, etc., and a layer composed of MgAg may be added between the third light-emitting layer 323 and the third cathode electrode 333 as a substrate. In addition, in the case of having a cavity structure, MgAg may also be used as a cathode electrode material. In addition, the formation process of the third cathode electrode 333 is performed by, for example, vacuum evaporation, PVD film formation, CVD film formation, ALD film formation, or any film formation process or a combination thereof.

[0079] In step S114, a third sealing layer 343 is formed on the substrate. Here, a continuous film of the third sealing layer 343 is formed on the third cathode electrode 333. The third sealing layer 343 includes a third inorganic insulating film. The third inorganic insulating film is, for example, composed of any one of a silicon oxide film (SiO), a silicon nitride film (SiN), a silicon oxynitride film (SiON), an aluminum oxide (AlO), etc., or a combination thereof. In addition, the formation process of the third sealing layer 343 is performed by any film forming process such as vacuum evaporation, PVD film forming, CVD film forming, ALD film forming, etc., or a combination thereof. In addition, the formation process of the third light-emitting layer 323, the third cathode electrode 333, and the third sealing layer 343 is performed in a vacuum atmosphere.

[0080] Fig. 9 It is an example of a schematic cross-sectional view of the substrate after the process of step S114. The third light-emitting layer 323 is formed on the electrode array 310 (the first anode electrode 311, the second anode electrode 312, and the third anode electrode 313). In addition, the third cathode electrode 333 is formed on the third light-emitting layer 323. In addition, the third sealing layer 343 is formed on the third cathode electrode 333. In addition, the third light-emitting layer 323, the third cathode electrode 333, and the third sealing layer 343 are also formed on the first stack (the first anode electrode 311, the first light-emitting layer 321, the first cathode electrode 331, and the first sealing layer 341) and the second stack (the second anode electrode 312, the second light-emitting layer 322, the second cathode electrode 332, and the second sealing layer 342).

[0081] Furthermore, the plurality of anode electrodes 311, 312, 313, the first to third light-emitting layers 321 to 323, and the first to third cathode electrodes 331 to 333 are sealed by the third sealing layer 343. Thus, when the substrate is exposed to the atmosphere, the plurality of anode electrodes 311, 312, 313, the first to third light-emitting layers 321 to 323, and the first to third cathode electrodes 331 to 333 are prevented from coming into contact with oxygen, moisture, and the like.

[0082] In step S115, a third mask 353 is formed on the substrate. Here, the third mask 353 is formed on the substrate by photolithography. The photolithography includes a resist forming process, an exposure process, and a development process. In the resist forming process, a photoresist is formed on the substrate. In the exposure process, light is irradiated to the substrate formed with the photoresist via a photomask. As a result, an exposed portion irradiated with light and an unexposed portion not irradiated with light are formed in the photoresist. In the development process, the third mask 353 is formed using the photoresist. In addition, in the case of a positive photoresist, the third mask 353 is formed by removing the photoresist of the exposed portion and leaving the photoresist of the unexposed portion. On the other hand, in the case of a negative photoresist, the third mask 353 is formed by removing the photoresist of the unexposed portion and leaving the photoresist of the exposed portion. In addition, the formation process of the third mask 353 is performed under an atmospheric atmosphere.

[0083] Fig.10 1 is an example of a schematic cross-sectional view of the substrate after the process of step S115 . The third mask 353 is selectively formed on the third anode electrode 313 . On the other hand, the third mask 353 is not formed on the first anode electrode 311 and the second anode electrode 312 .

[0084] In step S116, the substrate is subjected to etching. Here, the third sealing layer 343, the third cathode electrode 333, and the third light emitting layer 323 are etched through the third mask 353 by plasma etching. The etching is dry etching and is performed in a vacuum atmosphere.

[0085] Fig.11This is an example of a schematic cross-sectional view of a substrate after the process of step S116. The third sealing layer 343, the third cathode electrode 333, and the third light-emitting layer 323 on the first stack (first anode electrode 311) and the second stack (second anode electrode 312) are removed. On the other hand, the third light-emitting layer 323, the third cathode electrode 333, and the third sealing layer 343 covered by the third mask 353 on the third anode electrode 313 are left. In this way, by processing from step S112 to step S116, a third stack (organic EL element) stacked with the third anode electrode 313, the third light-emitting layer 323, the third cathode electrode 333, and the third sealing layer 343 is formed on the substrate. In addition, in the etching process, the entire third mask 353 is removed by ashing.

[0086] In step S117, a fourth sealing layer 344 is formed on the substrate. Here, a continuous film of the fourth sealing layer 344 is formed on the substrate on which the first stack to the third stack are formed. The fourth sealing layer 344 includes a fourth inorganic insulating film. The fourth inorganic insulating film is, for example, composed of any one of a silicon oxide film (SiO), a silicon nitride film (SiN), a silicon oxynitride film (SiON), an aluminum oxide (AlO), etc., or a combination thereof. In addition, the formation process of the fourth sealing layer 344 is performed, for example, by any film forming process such as vacuum evaporation, PVD film forming, CVD film forming, ALD film forming, or a combination thereof. In addition, the formation process of the fourth sealing layer 344 is performed under a vacuum atmosphere.

[0087] Fig.12 This is an example of a schematic cross-sectional view of the substrate after the process of step S117. The fourth sealing layer 344 seals the first to third stacks. This prevents the plurality of anode electrodes 311, 312, 313, the first to third light-emitting layers 321, 323, and the first to third cathode electrodes 331, 333 from contacting with oxygen, moisture, etc. when the substrate is exposed to the atmosphere.

[0088] In step S118, a fourth mask 354 is formed on the substrate. Here, the fourth mask 354 is formed on the substrate by photolithography. The photolithography includes a resist forming process, an exposure process, and a development process. In the resist forming process, a photoresist is formed on the substrate. In the exposure process, light is irradiated to the substrate formed with the photoresist via a photomask. As a result, an exposed portion irradiated with light and an unexposed portion not irradiated with light are formed in the photoresist. In the development process, the fourth mask 354 is formed using the photoresist. In addition, in the case of a positive photoresist, the fourth mask 354 is formed by removing the photoresist of the exposed portion and leaving the photoresist of the unexposed portion. On the other hand, in the case of a negative photoresist, the fourth mask 354 is formed by removing the photoresist of the unexposed portion and leaving the photoresist of the exposed portion. In addition, the formation process of the fourth mask 354 is performed under an atmospheric atmosphere.

[0089] Fig.13 1 is an example of a schematic cross-sectional view of the substrate after the process of step S118 . The fourth mask 354 is formed to have openings at positions where contact holes for the first cathode electrode 331 to the third cathode electrode 333 are to be formed.

[0090] In step S119, the substrate is subjected to an etching process. Here, the first sealing layer 341 to the fourth sealing layer 344 are etched through the fourth mask 354 by a plasma etching process. The etching process is a dry etching process and is performed in a vacuum atmosphere.

[0091] Fig.14 1 is an example of a schematic cross-sectional view of a substrate after the process of step S119. The first sealing layer 341 and the fourth sealing layer 344 are etched to form a contact hole 331c connected to the first cathode electrode 331. In addition, the second sealing layer 342 and the fourth sealing layer 344 are etched to form a contact hole 332c connected to the second cathode electrode 332. In addition, the third sealing layer 343 and the fourth sealing layer 344 are etched to form a contact hole 333c connected to the third cathode electrode 333. In addition, in the etching process, the entire fourth mask 354 is removed by ashing.

[0092] In step S120, a wiring layer 360 is formed on the substrate. Here, a continuous film of the wiring layer 360 is formed on the fourth sealing layer 344. The wiring layer 360 is composed of, for example, ITO, IZO, etc. In addition, the formation process of the wiring layer 360 is performed by, for example, vacuum evaporation, PVD film formation, CVD film formation, ALD film formation, etc., or a combination thereof. The wiring layer 360 is electrically connected to the first cathode electrode 331 via the contact hole 331c. In addition, the wiring layer 360 is electrically connected to the second cathode electrode 332 via the contact hole 332c. In addition, the wiring layer 360 is electrically connected to the third cathode electrode 333 via the contact hole 333c.

[0093] In step S121, a fifth sealing layer 345 is formed on the substrate. Here, a continuous film of the fifth sealing layer 345 is formed on the substrate on which the wiring layer 360 is formed. The fifth sealing layer 345 includes a fifth inorganic insulating film. The fifth inorganic insulating film is, for example, composed of any one of a silicon oxide film (SiO), a silicon nitride film (SiN), a silicon oxynitride film (SiON), an aluminum oxide (AlO), etc., or a combination thereof. In addition, the formation process of the fifth sealing layer 345 is performed by any film forming process of vacuum evaporation, PVD film forming, CVD film forming, ALD film forming, etc., or a combination thereof. In addition, the formation process of the fifth sealing layer 345 is performed in a vacuum atmosphere.

[0094] Fig.15 3 is an example of a schematic cross-sectional view of the substrate after the process of step S121. The fifth sealing layer 345 seals the first to third stacks and the wiring layer 360. Thus, when the substrate is exposed to the atmosphere, the plurality of anode electrodes 311, 312, 313, the first to third light-emitting layers 321 to 323, the first to third cathode electrodes 331 to 333, and the wiring layer 360 are prevented from contacting with oxygen, moisture, and the like.

[0095] As described above, according to the substrate processing method according to the first embodiment, three types of organic EL elements that respectively emit red (R), green (G), and blue (B) light can be formed on the substrate.

[0096] Furthermore, according to the substrate processing method of the first embodiment, the electrodes (anode electrodes 311 to 313 and cathode electrodes 331 to 333 ) and the light emitting layers 321 to 323 are prevented from being degraded by moisture, oxygen, etc. during the photolithography process, thereby suppressing the degradation of the organic EL element.

[0097] Here, the substrate processing method involved in the reference example is described. In the substrate processing method involved in the reference example, one type of organic EL element is formed on the substrate by performing the following steps on the substrate having the electrode array 310: a step of forming a light-emitting layer on the entire substrate: forming a cathode electrode on the entire substrate; forming a first sealing layer on the entire substrate; a step of forming a first mask on a selected type of anode electrode; etching the light-emitting layer, cathode electrode and first sealing layer on the anode electrode where the first mask is not formed; forming a second sealing layer on the entire substrate; forming a second mask on the selected type of anode electrode; and etching the second sealing layer on the anode electrode where the second mask is not formed. By repeating this process twice more, three types of organic EL elements are formed on the substrate.

[0098] The substrate processing method involved in the reference example also implements the following steps: forming a mask for forming a contact hole; forming a contact hole by etching; forming a wiring layer; forming a mask for etching the wiring layer; removing a portion of the wiring layer by etching; and forming a sealing layer.

[0099] Here, according to the substrate processing method involved in the reference example, the number of times of photolithography processing is eight times, the number of times of etching processing is eight times, and the number of times of forming the sealing layer is seven times. In addition, according to the substrate processing method involved in the reference example, the number of times the anode electrode is exposed to plasma is zero for the first type of anode electrode, two times for the second type of anode electrode, and four times for the third type of anode electrode.

[0100] In contrast, according to the substrate processing method involved in the first embodiment, the number of times of photolithography processing is four times, the number of times of etching processing is four times, and the number of times of forming the sealing layer is five times. As such, according to the substrate processing method involved in the first embodiment, the number of processes of photolithography processing, etching processing, and sealing layer forming processing can be reduced compared to the substrate processing method involved in the reference example. As a result, the productivity of substrate processing for forming multiple types of organic EL elements is improved.

[0101] In addition, according to the substrate processing method involved in the first embodiment, the number of times the anode electrodes 311 to 313 are exposed to the plasma is zero for the first anode electrode 311, one for the second anode electrode 312, and two for the third anode electrode 313. As such, according to the substrate processing method involved in the first embodiment, the maximum value of the number of plasma exposures (in other words, plasma exposure time) of the anode electrodes 311 to 313 can be suppressed compared to the substrate processing method involved in the reference example. Thus, by suppressing the degradation of the anode electrodes 311 to 313, the degradation of the organic EL element can be suppressed.

[0102] (Other Example of the Step of Forming the First Laminated Body)

[0103] Fig.16 This is another example of a schematic cross-sectional view of the substrate in the step of forming the first stack.

[0104] exist Figures 1 to 15 In the example of the substrate processing method according to the first embodiment shown in FIG. 1 , when the first stacked body is formed using the first mask 351 (see FIG. 1 ), the first stacked body is formed using the first mask 351. Figure 1 In step S106), the first sealing layer 341 is removed through the first mask 351 until the portion of the first sealing layer 341 exposed from the first mask 351 disappears (see Figure 4 , Figure 5 ), but it can also be processed as follows.

[0105] First, in the first process, Fig.16 As shown in (A), the first sealing layer 341 is removed through the first mask 351 in such a manner that a portion of the first sealing layer 341 exposed from the first mask 351 is left. That is, the first sealing layer 341 is removed through the first mask 351 in such a manner that a portion of the first sealing layer 341 corresponding to the anode electrodes 312 and 313 other than the anode electrode 311 is left.

[0106] Then, in the second step, Fig.16 As shown in (B), similarly to the aforementioned step S106, the first mask 351 is removed by ashing the first mask 351.

[0107] Next, in the third step, if Fig.16 As shown in (C), the entire first sealing layer 341 including the portion corresponding to the anode electrode 311 is etched. This etching is performed until the first sealing layer 341 in the portion corresponding to the anode electrodes 312 and 313 other than the anode electrode 311 disappears.

[0108] Then, in the fourth step, if Fig.16 As shown in (D), the first cathode electrode 331 and the first light-emitting layer 321 are removed using the remaining first sealing layer 341 as a mask, thereby forming a first stacked body. That is, after ashing the first mask 351, a portion of the first sealing layer 341, the first cathode electrode 331, and the first light-emitting layer 321 remaining at the portion corresponding to the anode electrodes 312 and 313 other than the anode electrode 311 are removed, thereby forming a first stacked body.

[0109] By forming the first stacked body in this way, it is possible to suppress the first light emitting layer 321 from being damaged when the first mask 351 is ashed. In addition, it is possible to suppress the first cathode electrode 331 from being damaged when the first mask 351 is ashed. In addition, this formation process can also be applied to the second stacked body and later, and it is possible to suppress the light emitting layer and cathode electrode corresponding to each stacked body from being damaged.

[0110] <Second Embodiment>

[0111] use Figures 17 to 34 Another example of a substrate processing method for forming a plurality of types of organic EL elements on a substrate will be described. Fig.17 This is a flowchart showing an example of a substrate processing method according to the second embodiment. Figures 18 to 34 This is an example of a schematic cross-sectional view of a substrate in each step.

[0112] Here, a substrate processing method for forming three types of organic EL elements on a substrate is described as an example. Specifically, an organic EL element emitting red light (R), an organic EL element emitting green light (G), and an organic EL element emitting blue light (B) are formed on a substrate as an example. In addition, the organic EL element is composed of a stacked anode electrode, a light-emitting layer, and a cathode electrode.

[0113] Furthermore, the types of organic EL elements formed on the substrate are not limited to three types, and may be one type or two or more types.

[0114] In step S201 , a substrate is prepared.

[0115] Fig.18 This is an example of a cross-sectional schematic diagram of the substrate prepared in step S201. The substrate has a substrate 400 and an electrode array 410. The substrate 400 is composed of, for example, a glass plate. In addition, the substrate 400 is not limited thereto, and may also be a ceramic plate, a plastic plate, a metal plate, a silicon plate, etc., and there is no limitation on the material. In addition, the substrate 400 may also be composed of a material having insulating properties. In addition, the substrate 400 may also be composed of a material having light transmittance. In addition, the shape of the substrate (substrate 400) may be rectangular, circular, etc., and there is no limitation on the shape.

[0116] The electrode array 410 has a plurality of anode electrodes 411, 412, 413. Here, the electrode array 410 includes a first anode electrode 411, a second anode electrode 412, and a third anode electrode 413. The plurality of anode electrodes 411, 412, 413 are made of, for example, ITO. In addition, the plurality of anode electrodes 411, 412, 413 are not limited thereto, and a layer made of silver or aluminum may be added between the substrate 400 and the anode electrodes 411, 412, 413 as a substrate. In addition, the plurality of anode electrodes 411, 412, 413 may also be made of a conductive material. In addition, the plurality of anode electrodes 411, 412, 413 may also be made of a light-transmitting material. In addition, the plurality of anode electrodes 411, 412, 413 are arranged at different positions on the surface of the substrate (substrate 400).

[0117] In addition, although the description is given assuming that a substrate having the electrode array 410 is prepared in step S201, the present invention is not limited thereto. Step S201 may include a step of forming the electrode array 410 on the substrate (base material 400).

[0118] In step S202, a first sealing layer 441 is formed on the substrate. Here, a continuous film of the first sealing layer 441 is formed in a manner covering the entire electrode array 410. The first sealing layer 441 includes a first inorganic insulating film. The first inorganic insulating film is, for example, composed of any one of a silicon oxide film (SiO), a silicon nitride film (SiN), a silicon oxynitride film (SiON), an aluminum oxide (AlO), etc., or a combination thereof. In addition, the formation process of the first sealing layer 441 is performed, for example, by any film forming process such as vacuum evaporation, PVD film forming, CVD film forming, ALD film forming, etc., or a combination thereof. In addition, the formation process of the first sealing layer 441 is performed under a vacuum atmosphere.

[0119] Furthermore, the plurality of anode electrodes 411, 412, and 413 are sealed by the first sealing layer 441. Thus, when the substrate is exposed to the air atmosphere, the plurality of anode electrodes 411, 412, and 413 are prevented from coming into contact with oxygen, moisture, and the like.

[0120] In step S203, a first mask 451 is formed on the substrate. Here, the first mask 451 is formed on the substrate by photolithography. The photolithography includes a resist forming process, an exposure process, and a development process. In the resist forming process, a photoresist is formed on the substrate. In the exposure process, light is irradiated to the substrate formed with the photoresist via a photomask. As a result, an exposed portion irradiated with light and an unexposed portion not irradiated with light are formed in the photoresist. In the development process, the first mask 451 is formed using the photoresist. In addition, in the case of a positive photoresist, the first mask 451 is formed by removing the photoresist of the exposed portion and leaving the photoresist of the unexposed portion. On the other hand, in the case of a negative photoresist, the first mask 451 is formed by removing the photoresist of the unexposed portion and leaving the photoresist of the exposed portion. In addition, the formation process of the first mask 451 is performed under an atmospheric atmosphere.

[0121] Fig.19 4 is an example of a schematic cross-sectional view of the substrate after the process of step S203. The first mask 451 is formed so as to have an opening on the first anode electrode 411. That is, the first mask 451 is formed on the second anode electrode 412 and the third anode electrode 413, but not on the first anode electrode 411.

[0122] In step S204, the substrate is subjected to an etching process. Here, the first sealing layer 441 is etched through the first mask 451 by a plasma etching process. The etching process is a dry etching process and is performed in a vacuum atmosphere.

[0123] Fig. 20 This is an example of a schematic cross-sectional view of a substrate after the process of step S204. The first sealing layer 441 on the first anode electrode 411 is removed to form an opening 441a in the first sealing layer 441 that is connected to the first anode electrode 411. On the other hand, the first sealing layer 441 covered by the first mask 451 is left on the second anode electrode 412 and the third anode electrode 413. That is, through the processing of steps S203 to S204, an opening 441a is formed in the first sealing layer 441 at a position corresponding to the first anode electrode 411. In addition, in the etching process, the entire first mask 451 is removed by ashing.

[0124] In step S205, a first light-emitting layer 421 is formed on the substrate. Here, a continuous film of the first light-emitting layer 421 is formed in a manner covering the entire electrode array 410. In addition, the first light-emitting layer 421 includes an organic EL, which is a light-emitting layer (organic EL layer) that emits light of a specific color (for example, red (R)) by applying a voltage between electrodes (the first anode electrode 411, the first cathode electrode 431 described later). In addition, the formation process of the first light-emitting layer 421 is performed, for example, by vacuum evaporation or the like.

[0125] In step S206, a first cathode electrode 431 is formed on the substrate. Here, a continuous film of the first cathode electrode 431 is formed on the first light-emitting layer 421. The first cathode electrode 431 is composed of, for example, ITO, IZO, etc., and a layer composed of MgAg may be added between the first light-emitting layer 421 and the first cathode electrode 431 as a substrate. In addition, in the case of having a cavity structure, MgAg may also be used as a cathode electrode material. In addition, the formation process of the first cathode electrode 431 is performed by, for example, vacuum evaporation, PVD film formation, CVD film formation, ALD film formation, or any film formation process or a combination thereof.

[0126] Fig.21 4 is an example of a schematic cross-sectional view of the substrate after step S206. The first light emitting layer 421 and the first cathode electrode 431 are formed on the first anode electrode 411. In addition, the first sealing layer 441, the first light emitting layer 421 and the first cathode electrode 431 are formed on the second anode electrode 412 and the third anode electrode 413.

[0127] In step S207, a second sealing layer 442 is formed on the substrate. Here, a continuous film of the second sealing layer 442 is formed on the first cathode electrode 431. The second sealing layer 442 includes a second inorganic insulating film. The second inorganic insulating film is, for example, composed of any one of a silicon oxide film (SiO), a silicon nitride film (SiN), a silicon oxynitride film (SiON), an aluminum oxide (AlO), etc., or a combination thereof. In addition, the formation process of the second sealing layer 442 is performed, for example, by any film forming process of vacuum evaporation, PVD film forming, CVD film forming, ALD film forming, etc., or a combination thereof. In addition, the formation process of the first light-emitting layer 421, the first cathode electrode 431, and the second sealing layer 442 is performed in a vacuum atmosphere.

[0128] Fig. 22 FIG. 4 is an example of a schematic cross-sectional view of the substrate after the process of step S207 . A second sealing layer 442 is formed on the first cathode electrode 431 .

[0129] Furthermore, the plurality of anode electrodes 411, 412, 413, the first light-emitting layer 421, and the first cathode electrode 431 are sealed by the second sealing layer 442. Thus, the plurality of anode electrodes 411, 412, 413, the first light-emitting layer 421, and the first cathode electrode 431 are prevented from contacting oxygen, moisture, and the like when the substrate is exposed to the atmosphere.

[0130] In step S208, a second mask 452 is formed on the substrate. Here, the second mask 452 is formed on the substrate by photolithography. The photolithography includes a resist forming process, an exposure process, and a development process. In the resist forming process, a photoresist is formed on the substrate. In the exposure process, light is irradiated to the substrate formed with the photoresist through a photomask. Here, a half-tone mask is used as the photomask. As a result, an exposed portion irradiated with light, a semi-exposed portion irradiated with a portion of the transmitted light, and an unexposed portion not irradiated with light are formed in the photoresist. In the development process, the second mask 452 is formed using the photoresist. In addition, in the case of a positive photoresist, the second mask is formed by removing the photoresist of the exposed portion and leaving the photoresist of the unexposed portion. On the other hand, in the case of a negative photoresist, the second mask 452 is formed by removing the photoresist of the unexposed portion and leaving the photoresist of the exposed portion. In addition, the film thickness of the second mask 452 in the half-exposed portion becomes thinner. In addition, the formation process of the second mask 452 is performed in an air atmosphere.

[0131] Fig.23 4 is an example of a schematic cross-sectional view of a substrate after the process of step S208. A second mask 452 is formed with a first thickness on the first anode electrode 411. The second mask 452 is formed to have an opening on the second anode electrode 412. The second mask 452 is formed with a second thickness thinner than the first thickness on the third anode electrode 413.

[0132] In step S209, the substrate is etched. Here, the second sealing layer 442, the first cathode electrode 431, and the first light emitting layer 421 are etched through the second mask 452 by plasma etching. The etching is dry etching and is performed in a vacuum atmosphere.

[0133] Fig.24: is an example of a schematic cross-sectional view of a substrate after the process of step S209. In the portion covered by the second mask 452 having the first thickness, the first light-emitting layer 421, the first cathode electrode 431, and the second sealing layer 442 are not removed by etching, but are left. In addition, in the portion covered by the second mask 452 having the second thickness, the first light-emitting layer 421, the first cathode electrode 431, and the second sealing layer 442 are removed by etching, and the first sealing layer 441 is left. In addition, in the portion of the opening of the second mask 452, the first light-emitting layer 421, the first cathode electrode 431, and the second sealing layer 442 are removed by etching, and the first sealing layer 441 is also removed by etching.

[0134] In this way, by processing from step S205 to step S209, a first stacked body (organic EL element) having a first anode electrode 411, a first light-emitting layer 421, a first cathode electrode 431, and a second sealing layer 442 is formed on the substrate. In addition, the first sealing layer 441 on the second anode electrode 412 is removed to form an opening 441b in the first sealing layer 441 that is connected to the second anode electrode 412. On the other hand, the third anode electrode 413 is covered by the first sealing layer 441. That is, the first stacked body is formed by processing from step S208 to step S209, and an opening 441b is formed in the first sealing layer 441 at a position corresponding to the second anode electrode 412. In addition, in the etching process, the entire second mask 452 is removed by ashing.

[0135] In step S210, the second light-emitting layer 422 is formed on the substrate. Here, a continuous film of the second light-emitting layer 422 is formed in a manner covering the entire electrode array 410. In addition, the second light-emitting layer 422 includes an organic EL, which is a light-emitting layer (organic EL layer) that emits light of a specific color (for example, green (G)) by applying a voltage between electrodes (the second anode electrode 412, the second cathode electrode 432 described later). In addition, the formation process of the second light-emitting layer 422 is performed, for example, by vacuum evaporation or the like.

[0136] In step S211, a second cathode electrode 432 is formed on a substrate. Here, a continuous film of the second cathode electrode 432 is formed on the second light-emitting layer 422. The second cathode electrode 432 is made of, for example, ITO, IZO, etc., and a layer made of MgAg may be added between the second light-emitting layer 422 and the second cathode electrode 432 as a substrate. In addition, in the case of a cavity structure, MgAg may also be used as a cathode electrode material. In addition, the second cathode electrode 432 is formed by, for example, vacuum evaporation, PVD film formation, CVD film formation, ALD film formation, or any film formation process or a combination thereof.

[0137] Fig.254 is an example of a schematic cross-sectional view of the substrate after the process of step S211. The second light-emitting layer 422 and the second cathode electrode 432 are formed on the second anode electrode 412. In addition, the second light-emitting layer 422 and the second cathode electrode 432 are formed on the first stack. In addition, the first sealing layer 441, the second light-emitting layer 422 and the second cathode electrode 432 are formed on the third anode electrode 413.

[0138] In step S212, a third sealing layer 443 is formed on the substrate. Here, a continuous film of the third sealing layer 443 is formed on the second cathode electrode 432. The third sealing layer 443 includes a third inorganic insulating film. The third inorganic insulating film is, for example, composed of any one of a silicon oxide film (SiO), a silicon nitride film (SiN), a silicon oxynitride film (SiON), an aluminum oxide (AlO), etc., or a combination thereof. In addition, the formation process of the third sealing layer 443 is performed, for example, by any film forming process of vacuum evaporation, PVD film forming, CVD film forming, ALD film forming, etc., or a combination thereof. In addition, the formation process of the second light-emitting layer 422, the second cathode electrode 432, and the third sealing layer 443 is performed in a vacuum atmosphere.

[0139] Fig.26 FIG. 4 is an example of a schematic cross-sectional view of the substrate after the process of step S212 . A third sealing layer 443 is formed on the second cathode electrode 432 .

[0140] Furthermore, the plurality of anode electrodes 411, 412, 413, the first light-emitting layer 421 to the second light-emitting layer 422, and the first cathode electrodes 431 to the second cathode electrodes 432 are sealed by the third sealing layer 443. Thus, when the substrate is exposed to the atmosphere, the plurality of anode electrodes 411, 412, 413, the first light-emitting layer 421 to the second light-emitting layer 422, and the first cathode electrodes 431 to the second cathode electrodes 432 are prevented from contacting with oxygen, moisture, and the like.

[0141] In step S213, a third mask 453 is formed on the substrate. Here, the third mask 453 is formed on the substrate by photolithography. The photolithography includes a resist forming process, an exposure process, and a development process. In the resist forming process, a photoresist is formed on the substrate. In the exposure process, light is irradiated to the substrate formed with the photoresist via a photomask. Here, a half-tone mask is used as the photomask. As a result, an exposed portion irradiated with light, a semi-exposed portion irradiated with a portion of the transmitted light, and an unexposed portion not irradiated with light are formed in the photoresist. In the development process, the third mask 453 is formed using the photoresist. In addition, in the case of a positive photoresist, the third mask 453 is formed by removing the photoresist of the exposed portion and leaving the photoresist of the unexposed portion. On the other hand, in the case of a negative photoresist, the third mask 453 is formed by removing the photoresist of the unexposed portion and leaving the photoresist of the exposed portion. In addition, the film thickness of the third mask 453 in the half-exposed portion is reduced. In addition, the formation process of the third mask 453 is performed in an air atmosphere.

[0142] Fig. 27 4 is an example of a schematic cross-sectional view of the substrate after the process of step S213. The third mask 453 is formed with a first thickness on the second anode electrode 412. The third mask 453 is formed to have an opening on the third anode electrode 413. The third mask 453 is formed with a second thickness thinner than the first thickness on the first anode electrode 411.

[0143] In step S214, the substrate is etched. Here, the third sealing layer 443, the second cathode electrode 432, and the second light emitting layer 422 are etched by plasma etching through the third mask 453. The etching is dry etching and is performed in a vacuum atmosphere.

[0144] Fig.28 4 is an example of a schematic cross-sectional view of a substrate after the process of step S214. In the portion covered by the third mask 453 having the first thickness, the second light-emitting layer 422, the second cathode electrode 432, and the third sealing layer 443 are not removed by etching, but are left. In addition, in the portion covered by the third mask 453 having the second thickness, the second light-emitting layer 422, the second cathode electrode 432, and the third sealing layer 443 are removed by etching, and the first sealing layer 441 is left. In addition, in the portion of the opening of the third mask 453, the second light-emitting layer 422, the second cathode electrode 432, and the third sealing layer 443 are removed by etching, and the first sealing layer 441 is also removed by etching.

[0145] In this way, through the processing of steps S210 to S214, a second stacked body (organic EL element) having a second anode electrode 412, a second light-emitting layer 422, a second cathode electrode 432, and a third sealing layer 443 is formed on the substrate. In addition, the first sealing layer 441 on the third anode electrode 413 is removed to form an opening 441c in the first sealing layer 441 that communicates with the third anode electrode 413. In addition, the second light-emitting layer 422, the second cathode electrode 432, and the third sealing layer 443 on the first stacked body are removed. That is, through the processing of steps S213 to S214, a second stacked body is formed, and an opening 441c is formed in the first sealing layer 441 at a position corresponding to the third anode electrode 413. In addition, in the etching process, the entire third mask 453 is removed by ashing.

[0146] In step S215, a third light-emitting layer 423 is formed on the substrate. Here, a continuous film of the third light-emitting layer 423 is formed in a manner covering the entire electrode array 410. In addition, the third light-emitting layer 423 includes an organic EL, which is a light-emitting layer (organic EL layer) that emits light of a specific color (for example, blue (B)) by applying a voltage between electrodes (the third anode electrode 413, the third cathode electrode 433 described later). In addition, the formation process of the third light-emitting layer 423 is performed, for example, by vacuum evaporation or the like.

[0147] In step S216, a third cathode electrode 433 is formed on the substrate. Here, a continuous film of the third cathode electrode 433 is formed on the third light-emitting layer 423. The third cathode electrode 433 is composed of, for example, ITO, IZO, etc., and a layer composed of MgAg may be added between the third light-emitting layer 423 and the third cathode electrode 433 as a substrate. In addition, in the case of having a cavity structure, MgAg may also be used as a cathode electrode material. In addition, the formation process of the third cathode electrode 433 is performed by, for example, vacuum evaporation, PVD film formation, CVD film formation, ALD film formation, or any film formation process or a combination thereof.

[0148] Fig.29 1 is an example of a schematic cross-sectional view of the substrate after the process of step S216. The third light-emitting layer 423 and the third cathode electrode 433 are formed on the third anode electrode 413. In addition, the third light-emitting layer 423 and the third cathode electrode 433 are formed on the first stack and the second stack.

[0149] In step S217, a fourth sealing layer 444 is formed on the substrate. Here, a continuous film of the fourth sealing layer 444 is formed on the third cathode electrode 433. The fourth sealing layer 444 includes a fourth inorganic insulating film. The fourth inorganic insulating film is, for example, composed of any one of a silicon oxide film (SiO), a silicon nitride film (SiN), a silicon oxynitride film (SiON), an aluminum oxide (AlO), etc., or a combination thereof. In addition, the formation process of the fourth sealing layer 444 is performed by any film forming process of vacuum evaporation, PVD film forming, CVD film forming, ALD film forming, etc., or a combination thereof. In addition, the formation process of the third light-emitting layer 423, the third cathode electrode 433, and the fourth sealing layer 444 is performed in a vacuum atmosphere.

[0150] Fig.30 FIG. 4 is an example of a schematic cross-sectional view of the substrate after the process of step S217 . A fourth sealing layer 444 is formed on the third cathode electrode 433 .

[0151] Furthermore, the plurality of anode electrodes 411, 412, 413, the first to third light-emitting layers 421 to 423, and the first to third cathode electrodes 431 to 433 are sealed by a fourth sealing layer 444. Thus, when the substrate is exposed to an atmospheric atmosphere, the plurality of anode electrodes 411, 412, 413, the first to third light-emitting layers 421 to 423, and the first to third cathode electrodes 431 to 433 are prevented from coming into contact with oxygen, moisture, and the like.

[0152] In step S218, a fourth mask 454 is formed on the substrate. Here, the fourth mask 454 is formed on the substrate by photolithography. The photolithography includes a resist forming process, an exposure process, and a development process. In the resist forming process, a photoresist is formed on the substrate. In the exposure process, light is irradiated to the substrate formed with the photoresist via a photomask. As a result, an exposed portion irradiated with light and an unexposed portion not irradiated with light are formed in the photoresist. In the development process, the fourth mask 454 is formed using the photoresist. In addition, in the case of a positive photoresist, the fourth mask 454 is formed by removing the photoresist of the exposed portion and leaving the photoresist of the unexposed portion. On the other hand, in the case of a negative photoresist, the fourth mask 454 is formed by removing the photoresist of the unexposed portion and leaving the photoresist of the exposed portion. In addition, the formation process of the fourth mask 454 is performed under an atmospheric atmosphere.

[0153] Fig.31 FIG. 4 is an example of a schematic cross-sectional view of the substrate after the process of step S218 . The fourth mask 454 is selectively formed on the third anode electrode 413 . On the other hand, the fourth mask 454 is not formed on the first anode electrode 411 and the second anode electrode 412 .

[0154] In step S219, the substrate is etched. Here, the fourth sealing layer 444, the third cathode electrode 433, and the third light emitting layer 423 are etched by plasma etching through the fourth mask 454. The etching is dry etching and is performed in a vacuum atmosphere.

[0155] Fig.32 This is an example of a schematic cross-sectional view of a substrate after the process of step S219. The fourth sealing layer 444, the third cathode electrode 433, and the third light-emitting layer 423 on the first stack (first anode electrode 411) and the second stack (second anode electrode 412) are removed. On the other hand, the fourth sealing layer 444, the third cathode electrode 433, and the third light-emitting layer 423 on the third anode electrode 413 covered by the fourth mask 454 are left. In this way, by processing from step S215 to step S219, a third stack (organic EL element) stacked with the third anode electrode 413, the third light-emitting layer 423, the third cathode electrode 433, and the fourth sealing layer 444 is formed on the substrate. That is, the third stack is formed by processing from steps S218 to S219. In addition, in the etching process, the entire fourth mask 454 is removed by ashing.

[0156] In step S220, the substrate is subjected to an etching process. Here, a plasma etching process is used to etch a portion of the second sealing layer 442 to the fourth sealing layer 444. The etching process is a dry etching process and is performed in a vacuum atmosphere.

[0157] Fig.33 4 is an example of a schematic cross-sectional view of a substrate after the process of step S220. The exposed portion 431c of the first cathode electrode 431 is formed by etching a portion of the second sealing layer 442. In addition, the exposed portion 432c of the second cathode electrode 432 is formed by etching a portion of the third sealing layer 443. In addition, the exposed portion 433c of the third cathode electrode 433 is formed by etching a portion of the fourth sealing layer 444.

[0158] In step S221, a wiring layer 460 is formed on the substrate. Here, a continuous film of the wiring layer 460 is formed on the substrate. The wiring layer 460 is composed of, for example, ITO, IZO, etc. In addition, the formation process of the wiring layer 460 is performed by, for example, vacuum evaporation, PVD film formation, CVD film formation, ALD film formation, etc., or a combination thereof. The wiring layer 460 is electrically connected to the first cathode electrode 431 via the exposed portion 431c. In addition, the wiring layer 460 is electrically connected to the second cathode electrode 432 via the exposed portion 432c. In addition, the wiring layer 460 is electrically connected to the third cathode electrode 433 via the exposed portion 433c.

[0159] In step S222, a fifth sealing layer 445 is formed on the substrate. Here, a continuous film of the fifth sealing layer 445 is formed on the substrate on which the wiring layer 460 is formed. The fifth sealing layer 445 includes a fifth inorganic insulating film. The fifth inorganic insulating film is, for example, composed of any one of a silicon oxide film (SiO), a silicon nitride film (SiN), a silicon oxynitride film (SiON), an aluminum oxide (AlO), etc., or a combination thereof. In addition, the formation process of the fifth sealing layer 445 is performed by any film forming process such as vacuum evaporation, PVD film forming, CVD film forming, ALD film forming, or a combination thereof. In addition, the formation process of the fifth sealing layer 445 is performed in a vacuum atmosphere.

[0160] Fig.34 4 is an example of a schematic cross-sectional view of the substrate after the process of step S222. The fifth sealing layer 445 seals the first to third stacks and the wiring layer 460. Thus, when the substrate is exposed to the atmosphere, the plurality of anode electrodes 411, 412, 413, the first to third light-emitting layers 421 to 423, the first to third cathode electrodes 431 to 433, and the wiring layer 460 are prevented from contacting with oxygen, moisture, and the like.

[0161] As described above, according to the substrate processing method according to the second embodiment, three types of organic EL elements that respectively emit red (R) light, green (G) light, and blue (B) light can be formed on a substrate.

[0162] Furthermore, according to the substrate processing method of the second embodiment, the electrodes (anode electrodes 411 to 413 and cathode electrodes 431 to 433 ) and the light emitting layers 421 to 423 are prevented from being degraded by moisture, oxygen, etc. during the photolithography process, thereby suppressing the degradation of the organic EL element.

[0163] In addition, according to the substrate processing method involved in the second embodiment, the number of times of photolithography processing is four times, the number of times of etching processing is five times (four times when step S219 and step S220 are set as the same process), and the number of times of forming the sealing layer is five times. In this way, according to the substrate processing method involved in the second embodiment, the number of processes of photolithography processing, etching processing and sealing layer forming processing can be reduced compared with the substrate processing method involved in the reference example. As a result, the productivity of substrate processing for forming multiple types of organic EL elements is improved.

[0164] In addition, according to the substrate processing method involved in the second embodiment, the number of times the anode electrodes 411 to 413 are exposed to the plasma is twice for the first anode electrode 411, twice for the second anode electrode 412, and twice for the third anode electrode 413. In this way, according to the substrate processing method involved in the second embodiment, the maximum value of the number of plasma exposure times (in other words, plasma exposure time) of the anode electrodes 411 to 413 can be suppressed compared to the substrate processing method involved in the reference example. Thus, the degradation of the organic EL element can be suppressed by suppressing the degradation of the anode electrodes 411 to 413. In addition, the number of plasma exposure times of the anode electrodes 411 to 413 can be made equal, thereby suppressing the difference in damage to the anode electrodes 411 to 413 between different types of organic EL elements.

[0165] (Other Example of the Step of Forming the First Laminated Body)

[0166] Fig.35 This is another example of a schematic cross-sectional view of the substrate in the step of forming the first stack.

[0167] exist Figures 17 to 34 In the example of the substrate processing method according to the second embodiment shown in FIG. 1 , when the first stacked body is formed using the second mask 452 (see FIG. 1 ), the second mask 452 is used to form the first stacked body. Fig.17 In step S209), the second sealing layer 442 is removed through the second mask 452 until the portion of the second sealing layer 442 exposed from the second mask 452 disappears (see Fig. 22 , Fig.23 ), but it can also be processed as follows.

[0168] First, in the first process, Fig.35 As shown in (A), the second sealing layer 442 is removed through the second mask 452 in such a manner that a portion of the second sealing layer 442 exposed from the second mask 452 is left. That is, the second sealing layer 442 is removed through the second mask 452 in such a manner that a portion of the second sealing layer 442 corresponding to the anode electrode 412 is left.

[0169] Then, in the second step, Fig.35 As shown in (B), the second mask 452 is ashed to remove the second mask 452 by an amount corresponding to the second thickness.

[0170] Then, in the third step, Fig.35As shown in (C), the entire second sealing layer 442 including the portion corresponding to the anode electrodes 412 and 413 other than the anode electrode 411 is etched. The etching is performed until the portion of the second sealing layer 442 corresponding to the anode electrode 412 disappears. Furthermore, the portion of the first cathode electrode 431 corresponding to the anode electrode 412 is removed by etching.

[0171] Then, in the fourth step, if Fig.35 As shown in (D), the second sealing layer 442 including the portion corresponding to the anode electrode 411 and the first light emitting layer 421 and the first sealing layer 441 corresponding to the anode electrode 412 are removed. The first sealing layer 441 is removed so that a portion of the first sealing layer 441 corresponding to the anode electrode 412 remains.

[0172] And, in the fifth step, if Fig.35 As shown in (E), after the second mask 452 including the portion corresponding to the anode electrode 411 is removed by ashing, the first light-emitting layer 421 and the first sealing layer 441 corresponding to the anode electrode 412 are removed using the remaining second sealing layer 442 as a mask, thereby forming a first stacked body. That is, after the second mask 452 is ashed, the first light-emitting layer 421 at the portion corresponding to the anode electrodes 412 and 413 other than the anode electrode 411 and the remaining portion of the first sealing layer 441 are removed, thereby forming a first stacked body.

[0173] By forming the first stacked body in this way, it is possible to suppress the first light emitting layer 421 from being damaged when the second mask 452 is ashed. In addition, it is possible to suppress the first cathode electrode 431 from being damaged when the second mask 452 is ashed. In addition, this formation process can also be applied to the second stacked body and later, and it is possible to suppress the light emitting layer and cathode electrode corresponding to each stacked body from being damaged.

[0174] In addition, in the present embodiment (the first embodiment, the second embodiment), the cathode electrode material and the anode electrode material of the top emission type are described, but it is not limited to this, and the bottom emission type may also be used. As the cathode electrode material of the bottom emission type, aluminum is preferred, and as the anode electrode material, ITO, IZO, etc. are preferred. In the case of a cavity structure, a layer formed of silver or the like may also be sandwiched in the ITO film of the cathode electrode material.

[0175] <First Substrate Processing System>

[0176] Next, use Fig.36 An example of a first substrate processing system 1 for implementing the substrate processing methods according to the first embodiment and the second embodiment will be described. Fig.361 is an example of a plan view showing the structure of the first substrate processing system 1 .

[0177] The first substrate processing system 1 includes a first processing station (substrate processing apparatus) 11 , a load lock module 12 , a carrier station 14 , a second processing station 15 , and a control unit 20 .

[0178] The first processing station 11 has a vacuum transfer module 30 and a plurality of Fig.36 In the example, there are three processing modules 40a, 40b respectively.

[0179] The vacuum transfer module 30 includes a vacuum transfer chamber 31 in which the interior is maintained in a reduced pressure state (vacuum state). A transfer mechanism 32 for transferring the substrate G is provided in the vacuum transfer chamber 31. The transfer mechanism 32 transfers the substrate G into and out of the processing modules 40a, 40b (specifically, the vacuum processing chambers 41a, 41b) and the load lock module 12 (specifically, the load lock chamber 13). The transfer mechanism 32 includes a transfer arm 32a for supporting the substrate G when transferring the substrate G.

[0180] The processing modules 40a and 40b have vacuum processing chambers 41a and 41b for performing a predetermined process on the substrate G under reduced pressure. In addition, the vacuum processing chambers 41a and 41b are connected to the vacuum transfer chamber 31 via the gate valve G1. The processing module 40a performs the processes of forming a sealing layer and etching. The processing module 40b performs the processes of forming a light-emitting layer, forming a cathode electrode, and forming a wiring layer. When the process is performed face-down, the processing module 40b may also include a flipping machine for flipping the substrate G.

[0181] The load lock module 12 connecting the first processing station 11 and the carrier station 14 has a load lock chamber 13 configured to be able to switch the interior of the chamber to an atmospheric pressure state or a vacuum state. The load lock chamber 13 is connected to the vacuum transfer chamber 31 via a gate valve G2. The load lock chamber 13 is connected to the atmospheric transfer chamber 51 via a gate valve G3.

[0182] The load lock module 12 connecting one vacuum transfer module 30 to another vacuum transfer module 30 has a load lock chamber 13 configured to switch the vacuum state in the chamber. The load lock chamber 13 is connected to the vacuum transfer chamber 31 of one vacuum transfer module 30 via a gate valve G2. The load lock chamber 13 is connected to the vacuum transfer chamber 31 of another vacuum transfer module 30 via another gate valve G2.

[0183] The carrier station 14 carries in and carries out a carrier C capable of accommodating a plurality of substrates G. In addition, the carrier station 14 includes an atmospheric transfer chamber 51 in which the interior is maintained at an atmospheric pressure state. A transfer mechanism 52 for transferring the substrate G is provided in the atmospheric transfer chamber 51. The transfer mechanism 52 carries in and carries out the substrate G between the carrier C mounted on the carrier mounting table 53 and the load lock module 12 (specifically, the load lock chamber 13). The transfer mechanism 52 includes a transfer arm 52a for supporting the substrate G when transferring the substrate G.

[0184] The second processing station 15 has an atmospheric transfer module 60 and a plurality of ( Fig.36 In the example, there are three) processing modules 70.

[0185] The atmospheric transfer module 60 includes an atmospheric transfer chamber 61 in which the atmosphere is maintained. A transfer mechanism 62 for transferring the substrate G is provided in the atmospheric transfer chamber 61. The transfer mechanism 62 transfers the substrate G into and out of the processing module 70 (specifically, the atmospheric processing chamber 71). The transfer mechanism 62 includes a transfer arm 62a for supporting the substrate G when transferring the substrate G.

[0186] The processing module 70 includes an atmospheric processing chamber 71 for performing a predetermined process under atmospheric pressure on the substrate G. The atmospheric processing chamber 71 is connected to the atmospheric transfer chamber 61 via a gate valve G4. The processing module 70 performs each process of the photolithography process (resist formation process, exposure process, and development process).

[0187] In addition, the atmospheric transfer chamber 51 of the carrier station 14 and the atmospheric transfer chamber 61 of the second processing station 15 may be connected through a passage module (not shown) so that the substrate G can be transferred between the atmospheric transfer chamber 51 and the atmospheric transfer chamber 61. In addition, the atmospheric transfer chamber 61 of the second processing station 15 may be configured to have a carrier placement table (not shown) so that the substrate G can be transferred between the atmospheric transfer chamber 51 and the atmospheric transfer chamber 61 by transferring the carrier C containing the substrate G.

[0188] The control unit 20 includes a computer having a processor such as a CPU, a memory, etc., and has a storage unit (not shown) for storing various information. A program including instructions for a processing sequence to be executed by the first substrate processing system 1 is stored in the storage unit. In addition, the program may be recorded in a storage medium readable by a computer and installed in the control unit 20 from the storage medium. In addition, the storage medium may be temporary or non-temporary.

[0189] With such a structure, the substrate processing method according to the first embodiment (see Figure 1), in the processes of steps S102 to S104, steps S106 to S109, steps S111 to S114, steps S116 to S117, and steps S119 to S121, the substrate G is transported via the vacuum transport chamber 31 and the load lock chamber 13 between the vacuum transport chambers 31. Thus, the substrate G can be processed without exposing the substrate G to the atmosphere.

[0190] In addition, in the substrate processing method according to the second embodiment (see Fig.17 ), in the processes of steps S204 to S207, the processes of steps S209 to S212, the processes of steps S214 to S217, and the processes of steps S219 to S222, the substrate G is transported via the vacuum transport chamber 31 and the load lock chamber 13 between the vacuum transport chambers 31. Thus, the substrate G can be processed without exposing the substrate G to the atmosphere.

[0191] That is, the first processing station 11 includes a vacuum processing chamber 41b for performing a process of forming a light-emitting layer, a vacuum processing chamber 41b for performing a process of forming a cathode electrode and a wiring layer, a vacuum processing chamber 41a for performing a process of forming a sealing layer, a vacuum processing chamber 41a for performing an etching process, and a vacuum transfer chamber 31 connecting these vacuum processing chambers. The substrate G formed with a mask is transferred from the load lock vacuum chamber 13 to the first processing station 11. First, the substrate G is transferred to the vacuum processing chamber 41a for performing an etching process to perform an etching process (for example, step S106). Next, the substrate G is transferred to the vacuum processing chamber 41b for performing a process of forming a light-emitting layer via the vacuum transfer chamber 31 to perform a process of forming a light-emitting layer (for example, step S107). Furthermore, the substrate G is transferred to the vacuum processing chamber 41b for performing a process of forming a cathode electrode layer via the vacuum transfer chamber 31 to perform a process of forming a cathode electrode (for example, step S108). Then, the substrate G is transferred to the vacuum processing chamber 41a for performing the sealing layer formation process via the vacuum transfer chamber 31 to perform the sealing layer formation process (e.g., step S109). Thereafter, the substrate G is transferred out of the load lock chamber 13. In addition, the substrate G can be transferred in and out of any one of the two load lock chambers 13 connected to the carrier station 14.

[0192] <Second Substrate Processing System>

[0193] Next, use Fig.37 An example of a second substrate processing system 101 for implementing the substrate processing methods according to the first embodiment and the second embodiment will be described. Fig.37 1 is an example of a plan view showing the structure of the second substrate processing system 101 .

[0194] The second substrate processing system 101 includes first processing stations (substrate processing apparatuses) 111 a - 111 d , load lock modules 112 a - 112 e , carrier stations 114 a and 114 b , a second processing station 115 , and a control unit 120 .

[0195] The first processing station 111a has a vacuum transfer module 130a and a plurality of ( Fig.37 In the example, there are two) processing modules 140a.

[0196] The vacuum transfer module 130a includes a vacuum transfer chamber 131a in which the interior is maintained in a reduced pressure state (vacuum state). A transfer mechanism 132a for transferring the substrate G is provided in the vacuum transfer chamber 131a. The transfer mechanism 132a transfers the substrate G in and out of the processing module 140a (specifically, the vacuum processing chamber 141a) and the load lock vacuum modules 112a and 112b (specifically, the load lock vacuum chambers 113a and 113b). The transfer mechanism 132a includes a transfer arm 132a1 for supporting the substrate G when transferring the substrate G.

[0197] The processing module 140a includes a vacuum processing chamber 141a for performing a predetermined process under reduced pressure on the substrate G. The vacuum processing chamber 141a is connected to the vacuum transfer chamber 131a via a gate valve G101a. The processing modules 140a each perform an etching process.

[0198] The first processing station 111b has a vacuum transfer module 130b and a plurality of ( Fig.37 In the example, there are two) processing modules 140b.

[0199] The vacuum transfer module 130b has a vacuum transfer chamber 131b in which the interior is maintained in a reduced pressure state (vacuum state). A transfer mechanism 132b for transferring the substrate G is provided in the vacuum transfer chamber 131b. The transfer mechanism 132b transfers the substrate G into and out of the processing module 140b (specifically, the vacuum processing chamber 141b) and the load lock vacuum modules 112b and 112c (specifically, the load lock vacuum chambers 113b and 113c). The transfer mechanism 132b has a transfer arm 132b1 for supporting the substrate G when transferring the substrate G.

[0200] The processing module 140b has a vacuum processing chamber 141b for performing a predetermined process on the substrate G under reduced pressure. In addition, the vacuum processing chamber 141b is connected to the vacuum transfer chamber 131b via a gate valve G101b. The processing module 140b performs the formation process of the light-emitting layer. When the process is performed face-down, the processing module 140b may also include a flipping machine for flipping the substrate G.

[0201] The first processing station 111c has a vacuum transfer module 130c and a plurality of ( Fig.37 In the example, there are two) processing modules 140c.

[0202] The vacuum transfer module 130c includes a vacuum transfer chamber 131c in which the interior is maintained in a reduced pressure state (vacuum state). A transfer mechanism 132c for transferring the substrate G is provided in the vacuum transfer chamber 131c. The transfer mechanism 132c transfers the substrate G in and out of the processing module 140c (specifically, the vacuum processing chamber 141c) and the load lock vacuum modules 112c and 112d (specifically, the load lock vacuum chambers 113c and 113d). The transfer mechanism 132c includes a transfer arm 132c1 for supporting the substrate G when transferring the substrate G.

[0203] The processing module 140c has a vacuum processing chamber 141c for performing a predetermined process on the substrate G under reduced pressure. In addition, the vacuum processing chamber 141c is connected to the vacuum transfer chamber 131c via a gate valve G101c. The processing module 140c performs a cathode electrode formation process and a wiring layer formation process respectively. In the case of performing the process in a face-down manner, the processing module 140c may also include a flipping machine for flipping the substrate G.

[0204] The first processing station 111d has a vacuum transfer module 130d and a plurality of ( Fig.37 In the example, there are two) processing components 140d.

[0205] The vacuum transfer module 130d includes a vacuum transfer chamber 131d in which the interior is maintained in a reduced pressure state (vacuum state). A transfer mechanism 132d for transferring the substrate G is provided in the vacuum transfer chamber 131d. The transfer mechanism 132d transfers the substrate G in and out of the processing module 140d (specifically, the vacuum processing chamber 141d) and the load lock vacuum modules 112d and 112e (specifically, the load lock vacuum chambers 113d and 113e). The transfer mechanism 132d includes a transfer arm 132d1 for supporting the substrate G when transferring the substrate G.

[0206] The processing module 140d includes a vacuum processing chamber 141d for performing a predetermined process under reduced pressure on the substrate G. The vacuum processing chamber 141d is connected to the vacuum transfer chamber 131d via a gate valve G101d. The processing module 140d performs a sealing layer forming process.

[0207] The load lock module 112a has a load lock chamber 113a configured to switch the interior of the chamber to an atmospheric pressure state or a vacuum state. In addition, the load lock module 112a connects the first processing station 111a and the carrier station 114a. The load lock chamber 113a is connected to the vacuum transfer chamber 131a via a gate valve G102a. The load lock chamber 113a is connected to the atmospheric transfer chamber 151a via a gate valve G103a.

[0208] The load lock module 112b has a load lock chamber 113b configured to switch the vacuum state in the chamber. In addition, the load lock module 112b connects the first processing station 111a with the first processing station 111b. The load lock chamber 113b is connected to the vacuum transfer chamber 131b via a gate valve G102b. The load lock chamber 113b is connected to the vacuum transfer chamber 131a via a gate valve G103b.

[0209] The load lock module 112c has a load lock chamber 113c configured to switch the vacuum state in the chamber. In addition, the load lock module 112c connects the first processing station 111b with the first processing station 111c. The load lock chamber 113c is connected to the vacuum transfer chamber 131c via a gate valve G102c. The load lock chamber 113c is connected to the vacuum transfer chamber 131b via a gate valve G103c.

[0210] The load lock module 112d has a load lock chamber 113d configured to switch the vacuum state in the chamber. In addition, the load lock module 112d connects the first processing station 111c with the first processing station 111d. The load lock chamber 113d is connected to the vacuum transfer chamber 131d via a gate valve G102d. The load lock chamber 113d is connected to the vacuum transfer chamber 131c via a gate valve G103d.

[0211] The load lock module 112e has a load lock chamber 113e configured to switch between an atmospheric pressure state and a vacuum state. In addition, the load lock module 112e connects the first processing station 111d and the carrier station 114b. The load lock chamber 113e is connected to the atmospheric transfer chamber 151b via a gate valve G102e. The load lock chamber 113e is connected to the vacuum transfer chamber 131d via a gate valve G103e.

[0212] The carrier station 114a carries and carries out a carrier C capable of accommodating a plurality of substrates G. In addition, the carrier station 114a has an atmospheric transfer chamber 151a in which the interior is maintained at an atmospheric pressure state. A transfer mechanism 152a for transferring the substrate G is provided in the atmospheric transfer chamber 151a. The transfer mechanism 152a transfers and carries out the substrate G between the carrier C placed on the carrier mounting table (not shown) and the load lock vacuum module 112a (specifically, the load lock vacuum chamber 113a). The transfer mechanism 152a has a transfer arm 152a1 for supporting the substrate G when transferring the substrate G.

[0213] The carrier station 114b carries in and carries out a carrier C capable of accommodating a plurality of substrates G. In addition, the carrier station 114b has an atmospheric transfer chamber 151b in which the interior is maintained at an atmospheric pressure state. A transfer mechanism 152b for transferring the substrate G is provided in the atmospheric transfer chamber 151b. The transfer mechanism 152b carries in and carries out the substrate G between the carrier C placed on the carrier mounting table (not shown) and the load lock vacuum module 112e (specifically, the load lock vacuum chamber 113e). The transfer mechanism 152b has a transfer arm 152b1 for supporting the substrate G when transferring the substrate G.

[0214] The second processing station 115 has an atmospheric transport module 160 and a plurality of ( Fig.37 In the example, there are three) processing modules 170.

[0215] The atmospheric transfer module 160 includes an atmospheric transfer chamber 161 in which the atmosphere is maintained. A transfer mechanism 162 for transferring the substrate G is provided in the atmospheric transfer chamber 161. The transfer mechanism 162 transfers the substrate G into and out of the processing module 170 (specifically, the atmospheric processing chamber 171). The transfer mechanism 162 includes a transfer arm 162a for supporting the substrate G when transferring the substrate G.

[0216] The processing module 170 includes an atmospheric processing chamber 171 for performing a predetermined process under atmospheric pressure on the substrate G. The atmospheric processing chamber 171 is connected to the atmospheric transfer chamber 161 via a gate valve G104. The processing module 170 performs each process of the photolithography process (resist formation process, exposure process, and development process).

[0217] Furthermore, the atmospheric transfer chambers 151a and 151b of the carrier stations 114a and 114b and the atmospheric transfer chamber 161 of the second processing station 115 may also be configured to be connected via a passage module (not shown) so that the substrate G can be transferred between the atmospheric transfer chambers 151a and 151b and the atmospheric transfer chamber 161. Furthermore, the atmospheric transfer chamber 161 of the second processing station 115 may also be configured to have a carrier placement table (not shown) so that the substrate G can be transferred between the atmospheric transfer chambers 151a and 151b and the atmospheric transfer chamber 161 by transferring the carrier C containing the substrate G.

[0218] The control unit 120 includes a computer having a processor such as a CPU, a memory, etc., and has a storage unit (not shown) for storing various information. A program including instructions for a processing sequence to be executed by the second substrate processing system 101 is stored in the storage unit. In addition, the program may be recorded in a storage medium readable by a computer and installed in the control unit 120 from the storage medium. In addition, the storage medium may be temporary or non-temporary.

[0219] With such a structure, the substrate processing method according to the first embodiment (see Figure 1 ), in the processes of steps S102 to S104, steps S106 to S109, steps S111 to S114, steps S116 to S117, and steps S119 to S121, the substrate G is transported through the vacuum transport chambers 131a to 131d. Thus, the substrate G can be processed without exposing the substrate G to the atmosphere.

[0220] In addition, in the substrate processing method according to the second embodiment (see Fig.17 ), in the processes of steps S204 to S207, steps S209 to S212, steps S214 to S217, and steps S219 to S222, the substrate G is transported through the vacuum transport chambers 131a to 131d. Thus, the substrate G can be processed without exposing the substrate G to the atmosphere.

[0221] That is, the first processing station 111a to 111d includes a vacuum processing chamber 141b for performing a process of forming a light-emitting layer, a vacuum processing chamber 141c for performing a process of forming a cathode electrode and a wiring layer, a vacuum processing chamber 141d for performing a process of forming a sealing layer, a vacuum processing chamber 141a for performing an etching process, and vacuum transfer chambers 131a to 131d connecting these vacuum processing chambers. The substrate G formed with a mask is transferred from the load lock vacuum chamber 113a to the first processing station 111a. First, the substrate G is transferred to the vacuum processing chamber 141a for performing an etching process to perform an etching process (for example, step S106). Next, the substrate G is transferred to the vacuum processing chamber 141b for performing a process of forming a light-emitting layer via the vacuum transfer chamber 131b to perform a process of forming a light-emitting layer (for example, step S107). Furthermore, the substrate G is transferred to the vacuum processing chamber 141c for performing a process of forming a cathode electrode layer via the vacuum transfer chamber 131c to perform a process of forming a cathode electrode layer (for example, step S108). Then, the substrate G is transferred to the vacuum processing chamber 141d for performing the sealing layer formation process via the vacuum transfer chamber 131d to perform the sealing layer formation process (e.g., step S109). Thereafter, the substrate G is transferred out of the load lock chamber 113e. In addition, in the present embodiment, the substrate G is transferred in from the load lock chamber 113a, but the substrate G may be transferred in and out of either the load lock chamber 113a or the load lock chamber 113e.

[0222] Although the embodiments and the like of the plasma processing system have been described above, the present disclosure is not limited to the above embodiments and the like, and various modifications and improvements can be made within the scope of the gist of the present disclosure described in the claims.

[0223] Description of Reference Numerals

[0224] 1: first substrate processing system; 101: second substrate processing system; 11, 111a~111d: first processing station; 12, 112a~112e: load lock vacuum module; 13, 113a~113e: load lock vacuum chamber; 14, 114a~114b: carrier station; 15, 115: second processing station; 20, 120: control unit; 30, 130a~130d: vacuum transfer module; 31, 131a~131d: vacuum transfer chamber; 32, 132a~132d: transfer mechanism; 32a, 132a1~132d1: transfer arm; 40a, 40b, 140a~140d: Processing module; 41a, 41b, 141a~141d: vacuum processing chamber; 51, 151a~151b: atmospheric transfer chamber; 52, 152a~152b: transfer mechanism; 52a, 152a1~152b1: transfer arm; 53: carrier mounting table; 60, 160: atmospheric transfer module; 61, 161: atmospheric transfer chamber; 62, 162: transfer mechanism; 62a, 162a: transfer arm; 70, 170: processing module; 71, 171: atmospheric processing chamber; G1~G4, G101a~G104: gate valve; G: substrate; C: carrier; 300: substrate; 310: electrode array; 311 : first anode electrode; 312: second anode electrode; 313: third anode electrode; 321: first light-emitting layer; 322: second light-emitting layer; 323: third light-emitting layer; 331: first cathode electrode; 332: second cathode electrode; 333: third cathode electrode; 331c~333c: contact hole; 341: first sealing layer; 342: second sealing layer; 343: third sealing layer; 344: fourth sealing layer; 345: fifth sealing layer; 351: first mask; 352: second mask; 353: third mask; 354: fourth mask; 360: wiring layer; 400: substrate; 410: electrode array; 411: first Anode electrode (first electrode); 412: second anode electrode (second electrode); 413: third anode electrode; 421: first light-emitting layer; 422: second light-emitting layer; 423: third light-emitting layer; 431: first cathode electrode; 432: second cathode electrode; 433: third cathode electrode; 431c~433c: exposed portion; 441: first sealing layer; 441a~441c: opening portion; 442: second sealing layer; 443: third sealing layer; 444: fourth sealing layer; 445: fifth sealing layer; 451: first mask; 452: second mask; 453: third mask; 454: fourth mask; 460: wiring layer.

Claims

1. A substrate processing method, comprising the following steps: Step (A), preparing a substrate having an electrode array formed by configuring a plurality of electrodes on a surface of the substrate; Step (B), forming a light-emitting layer, an electrode layer and a sealing layer on the entire electrode array; Step (C), forming a mask having a first thickness on one type of electrode among the plurality of electrodes on the sealing layer; as well as In step (D), the substrate is etched using the mask to form a stacked body including the one type of electrode, the light emitting layer, the electrode layer, and the sealing layer.

2. The substrate processing method according to claim 1, wherein: In the step (C), the mask is formed only on the one type of electrode.

3. The substrate processing method according to claim 1, wherein: The method further includes, after the step (A) and before the step (B), forming a first sealing layer having an opening at a position corresponding to an electrode of a first type among the plurality of electrodes, In step (B), a light emitting layer, an electrode layer and a second sealing layer are formed on the entire electrode array. In the step (C), a mask is formed on the second sealing layer, which has the first thickness on the first type of electrode, has an opening on the second type of electrode among the plurality of electrodes, and has a second thickness thinner than the first thickness on the other electrodes. In the step (D), a stacked body including the first type of electrode, the light emitting layer, the electrode layer, and the second sealing layer is formed, and an opening is formed at a position of the first sealing layer corresponding to the second type of electrode.

4. The substrate processing method according to any one of claims 1 to 3, wherein: The steps (B) to (D) are repeated.

5. The substrate processing method according to any one of claims 1 to 3, wherein: The electrode array includes three kinds of electrodes.

6. The substrate processing method according to claim 5, wherein: The three kinds of electrodes include the electrode of the stacked body that emits red light, the electrode of the stacked body that emits blue light, and the electrode of the stacked body that emits green light.

7. The substrate processing method according to any one of claims 1 to 3, wherein: The mask is a photoresist mask.

8. The substrate processing method according to claim 3, wherein: In the step (D), In the area where the mask has the second thickness, the second sealing layer, the electrode layer, and the light emitting layer are removed; In the region of the mask having the opening, the second sealing layer, the electrode layer, the light emitting layer and the first sealing layer are removed.

9. A substrate processing device for processing a substrate, wherein the substrate has an electrode array formed by configuring a plurality of electrodes on a substrate surface, a first light-emitting layer, a first electrode layer, and a first sealing layer are stacked on the substrate surface, and a mask is provided on one type of electrode among the plurality of electrodes and on the first sealing layer, the substrate processing device comprising: an etching processing module that performs an etching process on the substrate using the mask to form a stacked body having the one type of electrode, the first light-emitting layer, the first electrode layer, and the first sealing layer stacked thereon; a light emitting layer forming processing module for performing a second light emitting layer forming processing on the substrate subjected to the etching processing; an electrode layer forming processing module, which performs a second electrode layer forming process on the substrate on which the second light-emitting layer is formed; a sealing layer forming processing module for performing a second sealing layer forming processing on the substrate on which the second electrode layer is formed; as well as A vacuum transport module connects the etching process module, the light emitting layer forming process module and the sealing layer forming process module.

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