Plating device

Abstract

The purpose of the present invention is to improve the uniformity of the thickness distribution of a plating film in a plating device that supplies power to only one opposing side of a substrate. The intermediate mask (30) comprises: a pair of first side members (31) facing the power supply side members of the substrate holder; a pair of second side members (33) facing the non-power-supply side members of the substrate holder; a first electric field supply member (35) disposed on the first side member (31); and a second electric field supply member (37) disposed on the second side member (33). The first electric field supply member (35) is configured so as to extend along the first side member (31) between a first position (PG-1) located on an extension line of a first side (30a-1) of the second center opening (30a) and a second position (PG-2) located on an extension line of a second side (30a-2) facing the first side (30a-1). The second electric field supply member (37) is configured so as to supply an electric field in a pair between a third position (PG-3) located on an extension line of a third side (30a-3) of the second center opening (30a) and a fourth position (PG-4) located on an extension line of a fourth side (30a-4) facing the third side (30a-3) so as to be separated from the third position (PG-3) and the fourth position (PG-4).

Description

Technical Field

[0001] The present application relates to a plating device. Background Art

[0002] As an example of an electrolytic plating device, an immersion plating device is known. The immersion plating device is configured to hold a substrate on a substrate holder with the surface to be plated facing sideways and immerse the substrate in a plating solution, and apply a voltage between the substrate and an anode, thereby depositing a conductive film on the surface to be plated.

[0003] Patent document 1 discloses an immersion plating device for plating a rectangular substrate. The plating device includes: an anode mask for adjusting the electric field (current) from the anode to the substrate near the anode; and an intermediate mask for adjusting the electric field from the anode to the substrate near the substrate. In addition, Patent document 1 discloses that the plated film thickness distribution of the substrate is uniformed by providing an auxiliary anode in the intermediate mask.

[0004] Patent Document 1: Japanese Patent Application Publication No. 2023-1082

[0005] The plating apparatus disclosed in Patent Document 1 does not consider improving the uniformity of the plated film thickness distribution in a plating apparatus that supplies power only to one opposing side of a substrate.

[0006] That is, in a certain plating device, the main purpose is to simplify the structure of the substrate holder, and there is a case where the following substrate holder is used, and the substrate holder is configured to supply power to a pair of opposite sides of a rectangular substrate, and not to supply power to the other pair of opposite sides. In this case, compared with a plating device that supplies power to the four sides of the substrate, the formation state of the electric field is different, so it is easy to produce deviations in the distribution of the plated film thickness on the substrate by simply setting an auxiliary anode in the middle mask. Summary of the invention

[0007] Therefore, one of the objects of the present application is to improve the uniformity of the distribution of the thickness of the plated film in a plating device that supplies power only to one opposing side of a substrate.

[0008] According to one embodiment, a plating device is disclosed, which includes: a plating tank for accommodating a plating solution; an anode, which is arranged in the above-mentioned plating tank; a substrate holder, which is used to hold a rectangular substrate in a manner in which a plated surface is opposite to the above-mentioned anode, and the substrate holder has a power supply side component for supplying power to a pair of opposite sides of the above-mentioned rectangular substrate, and a non-power supply side component for not supplying power to the other pair of opposite sides of the above-mentioned rectangular substrate; an anode shield, which is arranged between the above-mentioned anode and the above-mentioned substrate holder, and has a rectangular first central opening that passes through the above-mentioned anode side and the above-mentioned substrate holder side; and an intermediate shield, which is arranged between the above-mentioned anode shield and the above-mentioned substrate holder, and has a rectangular second central opening that passes through the above-mentioned anode side and the above-mentioned substrate holder side, and the above-mentioned intermediate shield includes: a pair of first side components arranged opposite to the above-mentioned power supply side component of the above-mentioned substrate holder; A pair of second side parts arranged opposite to the non-power supply side parts of the above-mentioned substrate holder; a first electric field supply part for supplying an electric field, arranged on the surface of each of the above-mentioned pair of first side parts on the side of the above-mentioned substrate holder; and a second electric field supply part for supplying an electric field, arranged on the surface of each of the above-mentioned pair of second side parts on the side of the above-mentioned substrate holder, wherein the first electric field supply part is configured to extend along the above-mentioned first side part between a first position on the extension line of the first side of the second central opening of the rectangle and a second position on the extension line of the second side opposite to the above-mentioned first side, and the second electric field supply part is configured to supply the electric field in a pair between a third position on the extension line of the third side of the second central opening of the rectangle and a fourth position on the extension line of the fourth side opposite to the above-mentioned third side in a manner away from the third position and the fourth position. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] Figure 1 It is a cross-sectional view showing the overall structure of a plating apparatus according to one embodiment.

[0010] Figure 2 This is a diagram schematically showing the structure of a substrate holder according to one embodiment.

[0011] Figure 3 This is a diagram schematically showing the structure of an intermediate mask according to one embodiment.

[0012] Figure 4 Yes means Figure 3 A cross-section diagram of the AA line.

[0013] Figure 5 Yes means Figure 3 A cross-section diagram of line BB.

[0014] Figure 6 It is a diagram schematically showing the structure of the intermediate mask of Comparative Examples 1 and 2.

[0015] Figure 7 It is a graph showing the distribution of the plating film thickness based on the intermediate mask of one embodiment and the intermediate mask of a comparative example.

[0016] Figure 8 This is a diagram showing the comparison results of the uniformity of the plating film thickness distribution by the intermediate mask of one embodiment and the intermediate mask of a comparative example.

[0017] Fig. 9 This is a diagram schematically showing the structure of an intermediate mask according to another embodiment. DETAILED DESCRIPTION

[0018] Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. In the drawings described below, the same or corresponding components are denoted by the same reference numerals and duplicate descriptions are omitted.

[0019] Figure 1 1 is a cross-sectional view showing the overall structure of a plating device according to an embodiment. As shown in the figure, the plating device 10 according to the present embodiment comprises: an anode support 20 configured to hold an anode 21; a substrate support 40 configured to hold a rectangular substrate WF; and a plating tank 50 accommodating the anode support 20 and the substrate support 40 therein.

[0020] like Figure 1 As shown, the plating tank 50 has: a plating treatment tank 52, which contains a plating solution Q containing an additive; a plating solution discharge tank 54, which receives and discharges the plating solution Q overflowing from the plating treatment tank 52; and a partition wall 55, which separates the plating treatment tank 52 from the plating solution discharge tank 54.

[0021] The anode holder 20 holding the anode 21 and the substrate holder 40 holding the substrate WF are immersed in the plating solution Q in the plating treatment tank 52, and the anode 21 and the plated surface WF1 of the substrate WF are arranged opposite to each other in a substantially parallel manner. In other words, the substrate holder 40 holds the substrate WF in a state where the plated surface WF1 faces the side. A voltage is applied to the anode 21 and the substrate WF while they are immersed in the plating solution Q in the plating treatment tank 52. As a result, the metal ions are reduced on the plated surface WF1 of the substrate WF, and a film is formed on the plated surface WF1.

[0022] Figure 2 FIG. 1 is a diagram schematically showing the structure of a substrate support. Figure 2As shown, the substrate holder 40 has a power supply side component 42 that supplies power to a pair of opposite sides of the rectangular substrate WF, and a non-power supply side component 44 that does not supply power to the other pair of opposite sides of the rectangular substrate WF. The power supply side component 42 is configured to have a contact 43 that contacts the substrate WF when the substrate WF is mounted on the substrate holder 40, and power is supplied to the pair of sides of the substrate WF from a power source not shown via the contact 43. On the other hand, the non-power supply side component 44 is not provided with a contact, and power is not supplied to the other pair of sides of the substrate WF.

[0023] In the present embodiment, the substrate holder 40 is configured to supply power to a pair of left and right sides of the substrate WF, but not to a pair of upper and lower sides of the substrate WF. However, the present invention is not limited thereto, and the substrate holder 40 may also be configured to supply power to a pair of upper and lower sides of the substrate WF, but not to a pair of left and right sides of the substrate WF.

[0024] return Figure 1 As described above, the plating treatment tank 52 has a plating solution supply port 56 for supplying the plating solution Q into the tank. The plating solution discharge tank 54 has a plating solution discharge port 57 for discharging the plating solution Q overflowing from the plating treatment tank 52. The plating solution supply port 56 is arranged at the bottom of the plating treatment tank 52, and the plating solution discharge port 57 is arranged at the bottom of the plating solution discharge tank 54.

[0025] When the plating solution Q is supplied to the plating treatment tank 52 from the plating solution supply port 56, the plating solution Q overflows from the plating treatment tank 52, passes over the partition wall 55, and flows into the plating solution discharge tank 54. The plating solution Q flowing into the plating solution discharge tank 54 is discharged from the plating solution discharge port 57, and impurities are removed by a filter or the like provided in the plating solution circulation device 58. The plating solution Q from which impurities have been removed is supplied to the plating treatment tank 52 via the plating solution supply port 56 by the plating solution circulation device 58.

[0026] The plating device 10 has an anode shield 70 for adjusting the electric field between the anode 21 and the substrate WF. The anode shield 70 is a roughly plate-shaped component made of, for example, a dielectric material, and is disposed in front of the anode holder 20. Here, the front of the anode holder 20 refers to the surface on the side opposite to the substrate holder 40. That is, the anode shield 70 is arranged between the anode 21 and the substrate holder 40. The anode shield 70 has a first central opening 70a in a substantially central portion, and the first central opening 70a passes through the anode 21 side and the substrate holder 40 side, in other words, for the current flowing between the anode 21 and the substrate WF to pass through. The diameter of the first central opening 70a is preferably smaller than the diameter of the anode 21. The anode shield 70 is configured to be able to adjust the diameter of the first central opening 70a.

[0027] In addition, the plating device 10 has an intermediate shield 30, which is an example of an electric field adjustment component for adjusting the electric field between the anode 21 and the substrate WF. The intermediate shield 30 is a roughly plate-shaped component made of, for example, a dielectric material, and is arranged between the anode shield 70 and the substrate holder 40 (substrate WF). The intermediate shield 30 has a second central opening 30a, which passes through the anode 21 side and the substrate holder 40 side, in other words, for the current flowing between the anode 21 and the substrate WF to pass. The diameter of the second central opening 30a is preferably smaller than the diameter of the substrate WF. The intermediate shield 30 is configured to be able to adjust the diameter of the second central opening 30a.

[0028] A paddle 18 is provided between the intermediate mask 30 and the substrate holder 40. The paddle 18 is used to stir the plating liquid Q near the plated surface WF1 of the substrate WF. One end of the paddle 18 is fixed to a paddle driving device 19. The paddle 18 is moved along the plated surface WF1 of the substrate WF by the paddle driving device 19, thereby stirring the plating liquid Q.

[0029] The plating device 10 further includes a diaphragm box 60. The diaphragm box 60 is a box-shaped component for accommodating the anode holder 20 (anode 21) and the anode shield 70 in the plating tank 50. The diaphragm box 60 includes a diaphragm 62 disposed between the anode shield 70 and the intermediate shield 30. The diaphragm 62 is a membrane that separates the anode region where the anode 21 is disposed and the cathode region where the substrate WF is disposed. The diaphragm box 60 includes a plunger 64, which is used to discharge the plating solution Q from the diaphragm box 60 when the diaphragm box 60 is lifted from the plating tank 50.

[0030] As in the present embodiment, in a plating device having an intermediate shield 30, it is known that an auxiliary anode is provided on the intermediate shield 30. However, when power is supplied to only one opposite side of the substrate as in the above-mentioned substrate holder 40, the state of formation of the electric field is different from the state of power supplied to four sides of the substrate, and therefore, it is required to provide an auxiliary anode corresponding to the state of formation of the electric field. This point will be described below.

[0031] Figure 3 This is a diagram schematically showing the structure of an intermediate mask according to one embodiment. Figure 4 Yes means Figure 3 A cross-section diagram of the AA line. Figure 5 Yes means Figure 3 A cross-section diagram of line BB.

[0032] like Figure 3 to Figure 5 As shown, the intermediate mask 30 of this embodiment includes: a pair of first side members 31 arranged opposite to the power supply side members 42 of the substrate holder 40; and a pair of second side members 33 arranged opposite to the non-power supply side members 44 of the substrate holder 40.

[0033] In addition, the intermediate mask 30 includes: a first electric field supply component 35, which is arranged on the substrate support side of the first side component 31 and is used to supply an electric field; and a second electric field supply component 37, which is arranged on the substrate support side of the second side component 33 and is used to supply an electric field.

[0034] The first electric field supply member 35 is configured to extend along the first side member 31 between a first position PG-1 located on an extension line of the first side 30a-1 of the rectangular second central opening 30a and a second position PG-2 located on an extension line of the second side 30a-2 opposite to the first side 30a-1.

[0035] More specifically, the first electric field supply member 35 includes: a first groove 32-1 extending from the first position PG-1 to the second position PG-2; and a first auxiliary anode 34-1 arranged inside the first groove 32-1. In addition, the first electric field supply member 35 includes: a first shielding member 36-1 arranged in the first groove 32-1 in a manner to shield the first auxiliary anode 34-1; and a first opening 36-1a formed in the first shielding member 36-1 from the first position PG-1 to the second position PG-2. As a result, the first auxiliary anode 34-1 is exposed from the first opening 36-1a, and the electric field is supplied to the substrate WF through the first opening 36-1a.

[0036] The first electric field supply member 35 includes a first membrane 38-1 disposed in the first opening 36-1a. The first membrane 38-1 is a membrane such as an ion exchange membrane. The first membrane 38-1 can prevent decomposition products generated by the first auxiliary anode 34-1 from adhering to the plated surface WF1 of the substrate WF.

[0037] On the other hand, the second electric field supply component 37 is configured to supply the electric field in a pair between a third position PG-3 on an extension line of a third side 30a-3 of the rectangular second central opening 30a and a fourth position PG-4 on an extension line of a fourth side 30a-4 opposite to the third side 30a-3, so as to be away from the third position PG-3 and the fourth position PG-4.

[0038] More specifically, the second electric field supply member 37 includes: a second groove 32-2 extending from the third position PG-3 to the fourth position PG-4; and a second auxiliary anode 34-2 arranged inside the second groove 32-2. In addition, the second electric field supply member 37 includes a second shielding member 36-2, which is arranged in the second groove 32-2 in a manner to shield the second auxiliary anode 34-2. In addition, the second electric field supply member 37 includes: a second opening 36-2a formed in the second shielding member 36-2 in a manner away from the third position PG-3; and a third opening 36-2b formed in the second shielding member 36-2 in a manner away from the fourth position PG-4 and the second opening 36-2a. As a result, the second auxiliary anode 34-2 is exposed from the second opening 36-2a and the third opening 36-2b, and thus the electric field is supplied to the substrate WF through the second opening 36-2a and the third opening 36-2b. Furthermore, the second opening 36 - 2 a and the third opening 36 - 2 b are not integrated, and the second shielding member 36 - 2 exists between the second opening 36 - 2 a and the third opening 36 - 2 b.

[0039] In addition, the second electric field supply component 37 includes a second diaphragm 38-2 and a third diaphragm 38-3 respectively arranged at the second opening 36-2a and the third opening 36-2b. The second diaphragm 38-2 and the third diaphragm 38-3 are diaphragms such as ion exchange membranes. In the present embodiment, an example is shown in which the second auxiliary anode 34-2 arranged inside the second groove 32-2 is covered by the second shielding component 36-2, and the second opening 36-2a and the third opening 36-2b are formed in the second shielding component 36-2 to define the area where the auxiliary anode effect is produced, but it is not limited to this. For example, an auxiliary anode of a size equivalent to the second opening 36-2a and the third opening 36-2b can also be arranged at the place where the second opening 36-2a and the third opening 36-2b are formed. As a result, the second electric field supply component 37 can supply the electric field in a pair in a manner away from the third position PG-3 and the fourth position PG-4.

[0040] Figure 6 It is a diagram schematically showing the structure of the intermediate mask of Comparative Examples 1 and 2. Figure 6 The intermediate shield of Comparative Example 1 shown in (a) has the first electric field supply member 35 provided in the first side member 31 as in the present embodiment. On the other hand, the second shielding member 36-2 has no opening in the second side member 33, and no auxiliary anode is provided.

[0041] in addition, Figure 6The intermediate shield of Comparative Example 2 shown in (b) is provided with a first electric field supply component 35 in the first side component 31 as in the present embodiment. On the other hand, a pair of openings 36-2a and 36-2b are formed in the second shielding component 36-2 in the second side component 33, but these openings are in contact with the third position PG-3 and the fourth position PG-4, respectively.

[0042] Figure 7 It is a graph showing the distribution of the plating film thickness based on the intermediate mask of one embodiment and the intermediate mask of a comparative example. Figure 7 The distribution of the plating film thickness from the center (A) to the end (B) of the substrate WF is shown. Figure 7 In the graph of , the vertical axis shows the normalized plating film thickness, and the horizontal axis shows the measurement position of the plating film thickness from the center (A) to the end (B) of the substrate WF.

[0043] like Figure 7 As shown, in Comparative Example 1, since there is no auxiliary anode in the second side member 33, the thickness of the plated film at the portion of the substrate WF entering from the end to the inside (the area surrounded by the dotted line α) becomes thinner. In addition, in Comparative Example 2, the openings 36-2a and 36-2b formed in the second shielding member 36-2 are in contact with the third position PG-3 and the fourth position PG-4, so the electric field is concentrated at the corner of the substrate WF, resulting in the excessive thickness of the plated film at the end of the substrate WF (the area surrounded by the dotted line β). In contrast, the second opening 36-2a and the third opening 36-2b of the present embodiment are formed away from the third position PG-3 and the fourth position PG-4. As a result, the concentration of the electric field relative to the corner of the substrate WF can be suppressed, and the electric field is supplied to the portion of the substrate WF entering from the end to the inside, so that the uniformity of the distribution of the plated film thickness can be improved.

[0044] Figure 8 1 is a graph showing the results of comparison of the uniformity of the plating film thickness distribution of an intermediate mask according to an embodiment and an intermediate mask according to a comparative example. Figure 8 The vertical axis of the graph shows the deviation of the normalized coating thickness distribution. Figure 8 As shown, when the intermediate mask 30 of the present embodiment is used, the variation in the plating film thickness distribution can be suppressed compared with Comparative Examples 1 and 2.

[0045] also, Figure 3 The second opening 36 - 2 a and the third opening 36 - 2 b are formed in a manner shown in the figure, which is merely an example. The second opening 36 - 2 a and the third opening 36 - 2 b can be formed in various manners as described below.

[0046] Fig. 9 FIG. 2 is a diagram schematically showing the structure of an intermediate mask according to another embodiment. Fig. 9 As shown in (a), (b), and (c), the second electric field supply component 37 has four regions (first region (1) to fourth region (4)) divided into four equal parts from the third position PG-3 to the fourth position PG-4. The second opening 36-2a only needs to be formed in the second shielding component 362 in the first region (1) in a manner away from the third position PG-3. In addition, the third opening 36-2b only needs to be formed in the second shielding component 36-2 in the fourth region (4) in a manner away from the fourth position PG-4.

[0047] Therefore, in Figure 3 , an example is shown in which the second opening 36-2a and the third opening 36-2b are formed on the distal side 36-2c of the second shielding member 36-2 away from the second central opening 30a, but this is only an example. Fig. 9 As shown in (a), the second opening 36-2a and the third opening 36-2b may be formed at a proximal side 36-2d of the second shielding member 36-2 close to the second central opening 30a.

[0048] In addition, if Fig. 9 As shown in (b), the second opening 36-2a only needs to be formed away from the third position PG-3 at least in the first region (1), and thus it can be formed across the first region (1) and the second region (2). The third opening 36-2b only needs to be formed away from the fourth position PG-4 at least in the fourth region (4), and thus it can be formed across the third region (3) and the fourth region (4). In addition, the second opening 36-2a and the third opening 36-2b can also be formed between the distal edge 36-2c and the proximal edge 36-2d of the second shielding member 36-2.

[0049] In addition, if Fig. 9 As shown in (c), the second opening 36-2a and the third opening 36-2b can also be formed so that the dimension (AA) along the direction of the second side member 33 is smaller than the dimension (BB) of the second shielding member 36-2 between the second opening 36-2a and the third opening 36-2b along the direction of the second side member 33 (becoming AA<BB).

[0050] That is, if the size of the second opening 36-2a and the third opening 36-2b along the second side member 33 is too large, the electric field is excessively supplied to the central portion of the substrate WF, and there is a concern that the uniformity of the plated film thickness distribution is impaired. In contrast, by arranging the second shielding member 36-2 with an appropriate size between the second opening 36-2a and the third opening 36-2b, it is possible to suppress the excessive supply of the electric field to the central portion of the substrate WF, and as a result, the uniformity of the plated film thickness distribution can be improved.

[0051] Several embodiments of the present invention have been described above, but the embodiments of the invention described above are for the purpose of facilitating the understanding of the present invention, and are not intended to limit the present invention. The present invention can be changed and improved without departing from its main purpose, and the present invention certainly includes its equivalents. In addition, any combination or omission of the constituent elements described in the claims and the specification can be performed within the scope of at least a part of the above-mentioned problems or at least a part of the effects.

[0052] As an embodiment, the present application discloses a plating device, which includes: a plating tank for accommodating a plating solution; an anode, which is arranged in the above-mentioned plating tank; a substrate holder, which is used to hold a rectangular substrate in a manner in which a plated surface is opposite to the above-mentioned anode, and the substrate holder has a power supply side component for supplying power to a pair of opposite sides of the above-mentioned rectangular substrate, and a non-power supply side component for not supplying power to the other pair of opposite sides of the above-mentioned rectangular substrate; an anode shield, which is arranged between the above-mentioned anode and the above-mentioned substrate holder, and has a rectangular first central opening that passes through the above-mentioned anode side and the above-mentioned substrate holder side; and an intermediate shield, which is arranged between the above-mentioned anode shield and the above-mentioned substrate holder, and has a rectangular second central opening that passes through the above-mentioned anode side and the above-mentioned substrate holder side, and the above-mentioned intermediate shield includes: a pair of first side components arranged opposite to the above-mentioned power supply side component of the above-mentioned substrate holder ; a pair of second side members arranged opposite to the non-power supply side member of the substrate holder; a first electric field supply member for supplying an electric field arranged on the surface of each of the pair of first side members on the substrate holder side; and a second electric field supply member for supplying an electric field arranged on the surface of each of the pair of second side members on the substrate holder side, the first electric field supply member being configured to extend along the first side member between a first position on an extension line of a first side of the second central opening of the rectangle and a second position on an extension line of a second side opposite to the first side, and the second electric field supply member being configured to supply an electric field in a pair between a third position on an extension line of a third side of the second central opening of the rectangle and a fourth position on an extension line of a fourth side opposite to the third side in a manner away from the third position and the fourth position.

[0053] In addition, the present application discloses, as an embodiment, a plating device, wherein the first electric field supply component includes: a first groove extending from the first position to the second position; a first auxiliary anode arranged inside the first groove; a first shielding component arranged in the first groove in a manner to shield the first auxiliary anode; and a first opening formed in the first shielding component from the first position to the second position, and the second electric field supply component includes: a second groove extending from the third position to the fourth position; a second auxiliary anode arranged inside the second groove; a second shielding component arranged in the second groove in a manner to shield the second auxiliary anode; a second opening formed in the second shielding component in a manner away from the third position; and a third opening formed in the second shielding component in a manner away from the fourth position and the second opening.

[0054] In addition, the present application discloses, as an embodiment, a plating device, wherein the first electric field supply component further includes a first diaphragm arranged at the first opening, and the second electric field supply component further includes a second diaphragm and a third diaphragm respectively arranged at the second opening and the third opening.

[0055] In addition, the present application discloses, as an embodiment, a plating device, wherein the second electric field supply component has a first area to a fourth area divided into four equal parts from the third position to the fourth position, the second opening is formed in the first area in the second shielding component in a manner away from the third position, and the third opening is formed in the fourth area in the second shielding component in a manner away from the fourth position.

[0056] In addition, the present application discloses, as an embodiment, a plating device, wherein the second opening and the third opening are formed to have a dimension along the direction of the second side member that is smaller than a dimension of the second shielding member between the second opening and the third opening along the direction of the second side member.

[0057] Description of Reference Numerals

[0058] 10…plating device; 21…anode; 30…intermediate shield; 30a…second central opening; 30a-1…first side; 30a-2…second side; 30a-3…third side; 30a-4…fourth side; 31…first side member; 32-1…first groove; 32-2…second groove; 33…second side member; 34-1…first auxiliary anode; 34-2…second auxiliary anode; 35…first electric field supply member; 36-1…first shielding member; 36-1a…first opening; 36-2…second shielding member ; 36-2a…the second opening; 36-2b…the third opening; 37…the second electric field supply component; 38-1…the first diaphragm; 38-2…the second diaphragm; 38-3…the third diaphragm; 40…the substrate support; 42…the power supply side component; 44…the non-power supply side component; 50…the plating tank; 70…the anode shield; 70a…the first central opening; PG-1…the first position; PG-2…the second position; PG-3…the third position; PG-4…the fourth position; Q…the plating solution; WF…the substrate; WF1…the plated surface.

Claims

1. A plating device, characterized in that: include: A plating tank, the plating tank is used to contain a plating solution; an anode, the anode being disposed in the plating tank; A substrate holder for holding a rectangular substrate in a manner in which a plated surface faces the anode, the substrate holder comprising a power supply side component for supplying power to a pair of opposite sides of the rectangular substrate, and a non-power supply side component for not supplying power to the other pair of opposite sides of the rectangular substrate; an anode shield, the anode shield being disposed between the anode and the substrate support and having a rectangular first central opening penetrating the anode side and the substrate support side; as well as an intermediate mask, the intermediate mask being arranged between the anode mask and the substrate support and having a rectangular second central opening penetrating the anode side and the substrate support side, The intermediate shield includes: a pair of first side members arranged opposite to the power supply side member of the substrate support; a pair of second side members arranged opposite to the non-power supply side member of the substrate holder; a first electric field supply member arranged on the surface of each of the pair of first side members on the substrate holder side for supplying an electric field; and a second electric field supply member arranged on the surface of each of the pair of second side members on the substrate holder side for supplying an electric field, The first electric field supply member is configured to extend along the first side member between a first position located on an extension line of a first side of the second central opening of the rectangle and a second position located on an extension line of a second side opposite to the first side. The second electric field supplying component is configured to supply an electric field between a third position located on an extension line of a third side of the rectangular second central opening and a fourth position located on an extension line of a fourth side opposite to the third side, so as to form a pair away from the third position and the fourth position.

2. The plating device according to claim 1, characterized in that: The first electric field supply component includes: a first groove extending from the first position to the second position; a first auxiliary anode arranged inside the first groove; a first shielding component arranged in the first groove in a manner of shielding the first auxiliary anode; and a first opening formed in the first shielding component from the first position to the second position. The second electric field supply component includes: a second groove extending from the third position to the fourth position; a second auxiliary anode arranged inside the second groove; a second shielding component arranged in the second groove in a manner to shield the second auxiliary anode; a second opening formed in the second shielding component in a manner away from the third position; and a third opening formed in the second shielding component in a manner away from the fourth position and the second opening.

3. The plating device according to claim 2, characterized in that: The first electric field supply component further includes a first diaphragm disposed at the first opening, The second electric field supplying member further includes a second membrane and a third membrane respectively disposed at the second opening and the third opening.

4. The plating device according to claim 2 or 3, characterized in that: The second electric field supplying member has first to fourth regions divided into four equal parts from the third position to the fourth position, The second opening is formed in the second shielding member in the first region in a manner away from the third position. The third opening is formed in the second shielding member in the fourth region so as to be away from the fourth position.

5. The plating device according to claim 4, characterized in that: The second opening and the third opening are formed so that the dimensions along the second side member are smaller than the dimension of the second shielding member between the second opening and the third opening along the second side member.

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