Plating device

Abstract

Uniformity of plating film thickness distribution is improved in a plating device that supplies power to only one of opposite edges of a substrate. An intermediate mask (30) includes a pair of first edge members (31) that oppose a power supply edge member of a substrate holder, a pair of second edge members (33) that oppose a non-power supply edge member of the substrate holder, a first electric field supply member (35) disposed at the first edge members (31), and a second electric field supply member (37) disposed at the second edge members (33). The first electric field supply member (35) is configured to extend along the first edge members (31) between a first position (PG-1) on an extension line of a first edge (30a-1) of a second central opening (30a) and a second position (PG-2) on an extension line of a second edge (30a-2) opposite the first edge (30a-1). The second electric field supply member (37) is configured to supply an electric field as a pair away from a third position (PG-3) on an extension line of a third edge (30a-3) of the second central opening (30a) and a fourth position (PG-4) on an extension line of a fourth edge (30a-4) opposite the third edge (30a-3).

Description

TECHNICAL FIELD

[0001] The present application relates to a plating device. BACKGROUND

[0002] As one example of an electrolytic plating device, an immersion-type plating device is known. The immersion-type plating device is configured to hold a substrate in a substrate holder in a manner that a plating surface faces a lateral direction, and to immerse the substrate in a plating solution, and to apply a voltage between the substrate and an anode, thereby depositing a conductive film on the plating surface.

[0003] Patent Document 1 discloses an immersion-type plating device for plating processing of a rectangular substrate. The plating device has an anode shield for adjusting an electric field (electric current) from an anode to a substrate in the vicinity of the anode, and an intermediate shield for adjusting an electric field from the anode to the substrate in the vicinity of the substrate. Further, Patent Document 1 discloses that a plating film thickness distribution of the substrate is homogenized by providing an auxiliary anode to the intermediate shield.

[0004] Patent Document 1: Japanese Patent Application Publication No. 2023-1082

[0005] The plating device disclosed in Patent Document 1 does not consider improving the uniformity of the plating film thickness distribution in a plating device that supplies power to only one pair of opposite edges of a substrate.

[0006] That is, in a certain plating device, for the purpose of simplifying the structure of a substrate holder, there is a case where a substrate holder is used, which is configured to supply power to one pair of opposite edges of a rectangular substrate, and not to supply power to the other pair of opposite edges. In this case, the formation state of the electric field is different from that of a plating device that supplies power to four edges of a substrate, and therefore, merely by providing an auxiliary anode to the intermediate shield, a deviation in the plating film thickness distribution of the substrate is likely to occur. SUMMARY

[0007] Therefore, one of the objects of the present application is to improve the uniformity of the plating film thickness distribution in a plating device that supplies power to only one pair of opposite edges of a substrate.

[0008] According to one embodiment, a plating apparatus is disclosed, wherein, including: a plating bath for housing a plating solution; an anode configured in the plating bath; a substrate holder for holding a rectangular substrate with a plated surface opposing the anode, the substrate holder having a power supply edge member that supplies power to opposing edges of the rectangular substrate, and a non-power supply edge member that does not supply power to the other pair of opposing edges of the rectangular substrate; an anode shield configured between the anode and the substrate holder, having a rectangular first central opening through the anode side and the substrate holder side; and an intermediate shield configured between the anode shield and the substrate holder, having a rectangular second central opening through the anode side and the substrate holder side, the intermediate shield including: a pair of first edge members configured opposite the power supply edge members of the substrate holder; a pair of second edge members configured opposite the non-power supply edge members of the substrate holder; a first electric field supply member configured on the surface of the substrate holder side of each of the pair of first edge members for supplying an electric field; and a second electric field supply member configured on the surface of the substrate holder side of each of the pair of second edge members for supplying an electric field, the first electric field supply member is configured to extend along the first edge members between a first position on the extension line of a first edge of the rectangular second central opening and a second position on the extension line of a second edge opposite the first edge, and the second electric field supply member is configured to supply an electric field in pairs away from the third position and the fourth position between a third position on the extension line of a third edge of the rectangular second central opening and a fourth position on the extension line of a fourth edge opposite the third edge. BRIEF DESCRIPTION OF DRAWINGS

[0009] Figure 1 is a cross-sectional view showing the overall structure of the plating apparatus of one embodiment.

[0010] Figure 2 is a diagram schematically showing the structure of the substrate holder of one embodiment.

[0011] Figure 3 is a diagram schematically showing the structure of the intermediate shield of one embodiment.

[0012] Figure 4 is a diagram showing the cross section of the A-A line of Figure 3 .

[0013] Figure 5 is a diagram showing the cross section of the B-B line of Figure 3 .

[0014] Figure 6 is a diagram schematically showing the structure of the intermediate shield of Comparative Examples 1 and 2.

[0015] Figure 7 This is a graph showing the coating thickness distribution of the intermediate mask based on one embodiment and the intermediate mask of a comparative example.

[0016] Figure 8 This is a graph showing the comparison results of the uniformity of the coating thickness distribution of the intermediate mask based on one embodiment and the intermediate mask of a comparative example.

[0017] Figure 9 This is a diagram that schematically illustrates the structure of the intermediate mask in other embodiments. Detailed Implementation

[0018] Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. In the drawings described below, the same or equivalent constituent elements are labeled with the same reference numerals and repeated descriptions are omitted.

[0019] Figure 1 This is a cross-sectional view showing the overall structure of a plating apparatus according to one embodiment. As shown, the plating apparatus 10 of this embodiment includes: an anode support 20 configured to hold an anode 21; a substrate support 40 configured to hold a rectangular substrate WF; and a plating tank 50 that houses the anode support 20 and the substrate support 40 inside.

[0020] like Figure 1 As shown, the plating tank 50 includes: a plating treatment tank 52 which contains a plating solution Q containing additives; a plating solution discharge tank 54 which receives and discharges the plating solution Q overflowing from the plating treatment tank 52; and a partition wall 55 which separates the plating treatment tank 52 from the plating solution discharge tank 54.

[0021] An anode holder 20 holding an anode 21 and a substrate holder 40 holding a substrate WF are immersed in a plating solution Q within a plating bath 52. The anode 21 and the plating surface WF1 of the substrate WF are positioned approximately parallel to each other. In other words, the substrate holder 40 holds the substrate WF with the plating surface WF1 facing to the side. A voltage is applied to the anode 21 and the substrate WF while they are immersed in the plating solution Q in the plating bath 52. As a result, metal ions are reduced on the plating surface WF1 of the substrate WF, forming a film on the plating surface WF1.

[0022] Figure 2 This is a diagram that roughly represents the structure of the substrate support. (Example) Figure 2As shown, the substrate support 40 has power supply side members 42 that supply power to a pair of opposite sides of a rectangular substrate WF, and non-power supply side members 44 that supply power to the other pair of opposite sides of the rectangular substrate WF. The power supply side members 42 are configured to have contacts 43 that contact the substrate WF when it is mounted on the substrate support 40, and supply power (not shown) to a pair of sides of the substrate WF via the contacts 43. On the other hand, the non-power supply side members 44 do not have contacts and do not supply power to the other pair of sides of the substrate WF.

[0023] In this embodiment, the substrate support 40 is configured to supply power to a pair of left and right sides of the substrate WF, but not to a pair of top and bottom sides of the substrate WF. However, it is not limited to this, and the substrate support 40 may also be configured to supply power to a pair of top and bottom sides of the substrate WF, but not to a pair of left and right sides of the substrate WF.

[0024] return Figure 1 As described above, the plating treatment tank 52 has a plating solution supply port 56 for supplying plating solution Q into the tank. The plating solution discharge tank 54 has a plating solution discharge port 57 for discharging plating solution Q that overflows from the plating treatment tank 52. The plating solution supply port 56 is located at the bottom of the plating treatment tank 52, and the plating solution discharge port 57 is located at the bottom of the plating solution discharge tank 54.

[0025] If plating solution Q is supplied to plating treatment tank 52 from plating solution supply port 56, plating solution Q overflows from plating treatment tank 52, passes over partition wall 55 and flows into plating solution discharge tank 54. Plating solution Q flowing into plating solution discharge tank 54 is discharged from plating solution discharge port 57 and impurities are removed by filters or the like in plating solution circulation device 58. Plating solution Q with impurities removed is supplied to plating treatment tank 52 through plating solution supply port 56 via plating solution circulation device 58.

[0026] The plating apparatus 10 includes an anode mask 70 for adjusting the electric field between the anode 21 and the substrate WF. The anode mask 70 is a generally plate-shaped component, for example, made of a dielectric material, and is disposed in front of the anode support 20. Here, the front of the anode support 20 refers to the side facing the substrate support 40. That is, the anode mask 70 is disposed between the anode 21 and the substrate support 40. The anode mask 70 has a first central opening 70a approximately in its center, which extends through both the anode 21 side and the substrate support 40 side, in other words, allows current flowing between the anode 21 and the substrate WF to pass through. The diameter of the first central opening 70a is preferably smaller than the diameter of the anode 21. The anode mask 70 is configured to allow adjustment of the diameter of the first central opening 70a.

[0027] Further, the plating apparatus 10 has an intermediate shield 30, which is an example of an electric field adjusting member for adjusting an electric field between the anode 21 and the substrate WF. The intermediate shield 30 is a substantially plate-like member composed of, for example, a dielectric material, and is disposed between the anode shield 70 and the substrate holder 40 (substrate WF). The intermediate shield 30 has a second central opening 30a that penetrates the anode 21 side and the substrate holder 40 side, in other words, through which a current flowing between the anode 21 and the substrate WF passes. The diameter of the second central opening 30a is preferably smaller than the diameter of the substrate WF. The intermediate shield 30 is configured to be able to adjust the diameter of the second central opening 30a.

[0028] A paddle 18 for stirring the plating solution Q in the vicinity of the plated surface WF1 of the substrate WF is provided between the intermediate shield 30 and the substrate holder 40. One end of the paddle 18 is fixed to a paddle driving device 19. The paddle 18 is moved along the plated surface WF1 of the substrate WF by the paddle driving device 19, thereby stirring the plating solution Q.

[0029] The plating apparatus 10 further has a diaphragm box 60. The diaphragm box 60 is a box-like member for housing the anode holder 20 (anode 21) and the anode shield 70 in the plating bath 50. The diaphragm box 60 has a diaphragm 62 disposed between the anode shield 70 and the intermediate shield 30. The diaphragm 62 is a film that separates an anode region in which the anode 21 is disposed from a cathode region in which the substrate WF is disposed. The diaphragm box 60 has a plunger 64 for discharging the plating solution Q from the diaphragm box 60 when the diaphragm box 60 is picked up from the plating bath 50.

[0030] As in the present embodiment, in a plating apparatus provided with an intermediate shield 30, it is known to provide an auxiliary anode at the intermediate shield 30. However, in a case where only one pair of opposing sides of a substrate is supplied with power as in the substrate holder 40 described above, the state of formation of an electric field is different from a case where all four sides of a substrate are supplied with power, and thus an auxiliary anode corresponding to the state of formation of an electric field is required to be provided. Hereinafter, this point will be described.

[0031] Figure 3 is a view schematically showing the structure of the intermediate shield of one embodiment. Figure 4 is a view showing a cross section of the A-A line of Figure 3 . Figure 5 is a view showing a cross section of the B-B line of Figure 3 .

[0032] As shown in Figures 3 to 5 , the intermediate shield 30 of the present embodiment includes a pair of first side members 31 disposed opposite to the power supply side members 42 of the substrate holder 40, and a pair of second side members 33 disposed opposite to the non-power supply side members 44 of the substrate holder 40.

[0033] Further, the intermediate mask 30 includes a first electric field supplying member 35 disposed on a surface of the first edge member 31 on the substrate holder side for supplying an electric field, and a second electric field supplying member 37 disposed on a surface of the second edge member 33 on the substrate holder side for supplying an electric field.

[0034] The first electric field supplying member 35 is configured to extend along the first edge member 31 between a first position PG-1 on an extension line of a first side 30a-1 of the second central opening 30a of the rectangle and a second position PG-2 on an extension line of a second side 30a-2 opposite the first side 30a-1.

[0035] More specifically, the first electric field supplying member 35 includes a first groove 32-1 extending from the first position PG-1 to the second position PG-2, and a first auxiliary anode 34-1 disposed inside the first groove 32-1. Further, the first electric field supplying member 35 includes a first shielding member 36-1 disposed in the first groove 32-1 so as to shield the first auxiliary anode 34-1, and a first opening 36-1a formed in the first shielding member 36-1 from the first position PG-1 to the second position PG-2. Thus, the first auxiliary anode 34-1 is exposed from the first opening 36-1a, and thus supplies an electric field to the substrate WF via the first opening 36-1a.

[0036] Further, the first electric field supplying member 35 includes a first diaphragm 38-1 disposed in the first opening 36-1a. The first diaphragm 38-1 is a separation membrane such as an ion exchange membrane. By providing the first diaphragm 38-1, it is possible to suppress adhesion of decomposition products and the like generated by the first auxiliary anode 34-1 to the plated surface WFl of the substrate WF.

[0037] On the other hand, the second electric field supplying member 37 is configured to supply an electric field in a pair away from a third position PG-3 on an extension line of a third side 30a-3 of the second central opening 30a of the rectangle and a fourth position PG-4 on an extension line of a fourth side 30a-4 opposite the third side 30a-3.

[0038] More specifically, the second electric field supplying member 37 has a second slot 32-2 extending from the third position PG-3 to the fourth position PG-4, and a second auxiliary anode 34-2 disposed inside the second slot 32-2. In addition, the second electric field supplying member 37 has a second shielding member 36-2 disposed in the second slot 32-2 in a manner to shield the second auxiliary anode 34-2. In addition, the second electric field supplying member 37 has a second opening 36-2a formed in the second shielding member 36-2 in a manner to be away from the third position PG-3, and a third opening 36-2b formed in the second shielding member 36-2 in a manner to be away from the fourth position PG-4 and the second opening 36-2a. Thereby, the second auxiliary anode 34-2 is exposed from the second opening 36-2a and the third opening 36-2b, and thus an electric field is supplied to the substrate WF via the second opening 36-2a and the third opening 36-2b. Further, the second opening 36-2a and the third opening 36-2b are not integrated, and the second shielding member 36-2 is present between the second opening 36-2a and the third opening 36-2b.

[0039] In addition, the second electric field supplying member 37 has a second membrane 38-2 and a third membrane 38-3 disposed in the second opening 36-2a and the third opening 36-2b, respectively. The second membrane 38-2 and the third membrane 38-3 are separators such as ion exchange membranes. In the present embodiment, an example is shown in which the second auxiliary anode 34-2 disposed inside the second slot 32-2 is covered with the second shielding member 36-2, and the second opening 36-2a and the third opening 36-2b are formed in the second shielding member 36-2 to define a region in which the effect of the auxiliary anode is exerted, but the present embodiment is not limited thereto. For example, an auxiliary anode having a size corresponding to the second opening 36-2a and the third opening 36-2b can be disposed at the site where the second opening 36-2a and the third opening 36-2b are formed. Thereby, the second electric field supplying member 37 can supply an electric field in a pair away from the third position PG-3 and the fourth position PG-4.

[0040] Figure 6 FIG. 1 is a diagram schematically showing the structure of the intermediate mask of Comparative Example 1. Figure 6 The intermediate mask of Comparative Example 1 shown in (a) of FIG. 1 is provided with the first electric field supplying member 35 in the first edge member 31 as in the present embodiment. On the other hand, in the second edge member 33, no opening is formed in the second shielding member 36-2, and is in a state in which no auxiliary anode is provided.

[0041] In addition, Figure 6The intermediate mask of Comparative Example 2 shown in (b) is provided with the first electric field supplying member 35 in the first edge member 31 as in the present embodiment. On the other hand, in the second edge member 33, a pair of openings 36-2a, 36-2b are formed in the second shielding member 36-2, but these openings respectively contact the third position PG-3 and the fourth position PG-4.

[0042] Figure 7 is a graph showing the plated film thickness distribution of the intermediate mask based on one embodiment and the intermediate masks of the comparative examples. Figure 7 The distribution of the plated film thickness of the substrate WF from the center (A) to the end portion (B) is shown. In Figure 7 In the graph, the vertical axis shows the normalized plated film thickness, and the horizontal axis shows the measurement position of the plated film thickness of the substrate WF from the center (A) to the end portion (B).

[0043] As Figure 7 shown in (b), in Comparative Example 1, since there is no auxiliary anode in the second edge member 33, the plated film thickness of the portion of the substrate WF into which the end portion enters inwardly (the area enclosed by the broken line a) becomes thin. In addition, in Comparative Example 2, the openings 36-2a, 36-2b formed in the second shielding member 36-2 contact the third position PG-3 and the fourth position PG-4, so the electric field is concentrated in the corner portion of the substrate WF, as a result of which the plated film thickness of the end portion of the substrate WF (the area enclosed by the broken line β) becomes excessively thick. In contrast, in the present embodiment, the second opening 36-2a and the third opening 36-2b are formed so as to be away from the third position PG-3 and the fourth position PG-4. As a result, it is possible to suppress the concentration of the electric field with respect to the corner portion of the substrate WF, and to supply the electric field to the portion of the substrate WF into which the end portion enters inwardly, so it is possible to improve the uniformity of the plated film thickness distribution.

[0044] Figure 8 is a graph showing the comparative results of the uniformity of the plated film thickness distribution of the intermediate mask based on one embodiment and the intermediate masks of the comparative examples. In Figure 8 In the graph, the vertical axis shows the deviation of the normalized plated film thickness distribution. As Figure 8 shown in (b), in the case of the intermediate mask 30 of the present embodiment, it is possible to suppress the deviation of the plated film thickness distribution compared to Comparative Examples 1, 2.

[0045] Further, Figure 3 The formation method of the second opening 36-2a and the third opening 36-2b shown in (b) is merely one example. The second opening 36-2a and the third opening 36-2b can be formed in various ways as explained below.

[0046] Figure 9 is a graph schematically showing the structure of the intermediate mask of another embodiment. AsFigure 9 As shown in (a), (b), and (c), the second electric field supply component 37 has four regions (first region (1) to fourth region (4)) that are divided into four equal parts from the third position PG-3 to the fourth position PG-4. The second opening 36-2a can be formed in the first region (1) in a manner away from the third position PG-3 in the second shielding component 362. Similarly, the third opening 36-2b can be formed in the fourth region (4) in a manner away from the fourth position PG-4 in the second shielding component 36-2.

[0047] Therefore, in Figure 3 The image shows an example where the second opening 36-2a and the third opening 36-2b are formed on the distal edge 36-2c of the second shielding member 36-2, away from the second central opening 30a; however, this is merely an example. Figure 9 As shown in (a), the second opening 36-2a and the third opening 36-2b may also be formed on the proximal edge 36-2d of the second shielding member 36-2 near the second central opening 30a.

[0048] In addition, such as Figure 9 As shown in (b), the second opening 36-2a only needs to be formed at least in the first region (1) away from the third position PG-3, and therefore it can also be formed across the first region (1) and the second region (2). The third opening 36-2b only needs to be formed at least in the fourth region (4) away from the fourth position PG-4, and therefore it can also be formed across the third region (3) and the fourth region (4). In addition, the second opening 36-2a and the third opening 36-2b can also be formed between the far side 36-2c and the near side 36-2d of the second shielding member 36-2.

[0049] In addition, such as Figure 9 As shown in (c), the second opening 36-2a and the third opening 36-2b can also be formed such that the dimension (AA) along the direction of the second side member 33 is smaller than the dimension (BB) of the second shielding member 36-2 between the second opening 36-2a and the third opening 36-2b along the direction of the second side member 33 (becoming AA<BB).

[0050] That is, if the dimensions of the second opening 36-2a and the third opening 36-2b along the direction of the second side member 33 are too large, an excessive electric field will be supplied to the central part of the substrate WF, which may impair the uniformity of the coating thickness distribution. In contrast, by arranging the second shielding member 36-2 with an appropriate size between the second opening 36-2a and the third opening 36-2b, the excessive supply of electric field to the central part of the substrate WF can be suppressed, and as a result, the uniformity of the coating thickness distribution can be improved.

[0051] The above describes several embodiments of the present application, but the above-described embodiments of the present application are for the purpose of facilitating understanding of the present application, and are not intended to limit the present application. The present application can be changed and improved without departing from the gist thereof, and the present application certainly includes equivalents thereof. In addition, any combination or omission of the respective components described in the claims and the specification can be made within a range in which at least a part of the above-described problems can be solved, or at least a part of the effects can be exerted.

[0052] The present application discloses a plating device as one embodiment, wherein, including: plating tank for containing plating solution; anode, configured in the plating tank; substrate support for holding rectangular substrate in a manner that the plated surface is opposite to the anode, the substrate support has power supply edge components to the opposite pair of edges of the rectangular substrate, and the non-power supply edge components do not power the other pair of opposite edges of the rectangular substrate; anode mask, configured between the anode and the substrate support, has a rectangular first central opening through the anode side and the substrate support side; and intermediate mask, configured between the anode mask and the substrate support, has a rectangular second central opening through the anode side and the substrate support side, the intermediate mask includes: a pair of first edge components configured opposite to the power supply edge components of the substrate support; a pair of second edge components configured opposite to the non-power supply edge components of the substrate support; first electric field supply components configured on the surface of the substrate support side of each of the pair of first edge components for supplying electric field; and second electric field supply components configured on the surface of the substrate support side of each of the pair of second edge components for supplying electric field, the first electric field supply components are configured to extend along the first edge components between the first position on the extension line of the first edge of the rectangular second central opening and the second position on the extension line of the second edge opposite to the first edge, the second electric field supply components are configured to supply electric field in pairs away from the third position and the fourth position between the third position on the extension line of the third edge of the rectangular second central opening and the fourth position on the extension line of the fourth edge opposite to the third edge.

[0053] Further, the present application discloses, as one embodiment, a plating apparatus, wherein the first electric field supplying member includes a first groove extending from the first position to the second position, a first auxiliary anode disposed inside the first groove, a first shielding member disposed in the first groove in a manner of shielding the first auxiliary anode, and a first opening formed in the first shielding member from the first position to the second position, and the second electric field supplying member includes a second groove extending from the third position to the fourth position, a second auxiliary anode disposed inside the second groove, a second shielding member disposed in the second groove in a manner of shielding the second auxiliary anode, a second opening formed in the second shielding member in a manner of being apart from the third position, and a third opening formed in the second shielding member in a manner of being apart from the fourth position and the second opening.

[0054] Further, the present application discloses, as one embodiment, a plating apparatus, wherein the first electric field supplying member further includes a first diaphragm disposed in the first opening, and the second electric field supplying member further includes a second diaphragm and a third diaphragm disposed in the second opening and the third opening, respectively.

[0055] Further, the present application discloses, as one embodiment, a plating apparatus, wherein the second electric field supplying member has first to fourth regions divided into four from the third position to the fourth position, the second opening is formed in the second shielding member in a manner of being apart from the third position in the first region, and the third opening is formed in the second shielding member in a manner of being apart from the fourth position in the fourth region.

[0056] Further, the present application discloses, as one embodiment, a plating apparatus, wherein the second opening and the third opening are formed in a manner that a size in a direction of the second edge member is smaller than a size of the second shielding member in the direction of the second edge member between the second opening and the third opening.

[0057] Explanation of Reference Numerals

[0058] 10…plating device; 21…anode; 30…intermediate mask; 30a…second central opening; 30a-1…first side; 30a-2…second side; 30a-3…third side; 30a-4…fourth side; 31…first side member; 32-1…first groove; 32-2…second groove; 33…second side member; 34-1…first auxiliary anode; 34-2…second auxiliary anode; 35…first electric field supply member; 36-1…first shield member; 36-1a…first opening; 36-2…second shield member; 36-2a…second opening; 36-2b…third opening; 37…second electric field supply member; 38-1…first diaphragm; 38-2…second diaphragm; 38-3…third diaphragm; 40…substrate holder; 42…power supply side member; 44…non-power supply side member; 50…plating tank; 70…anode mask; 70a…first central opening; PG-1…first position; PG-2…second position; PG-3…third position; PG-4…fourth position; Q…plating solution; WF…substrate; WF1…plated surface.

Claims

1. A plating apparatus characterized by comprising: Comprise: a plating bath for housing a plating solution; an anode disposed in the plating bath; a substrate holder for holding a rectangular substrate with a plating surface facing the anode, the substrate holder being configured to supply power to a pair of opposite edges of the rectangular substrate while holding the rectangular substrate and not to supply power to the other pair of opposite edges of the rectangular substrate; an anode mask disposed between the anode and the substrate holder, having a first central opening of a rectangle that penetrates the anode side and the substrate holder side; and an intermediate mask disposed between the anode mask and the substrate holder, having a second central opening of a rectangle that penetrates the anode side and the substrate holder side, the intermediate mask including: a pair of first edge members disposed opposite the pair of opposite edges of the substrate holder to which power is supplied; a pair of second edge members disposed opposite the other pair of opposite edges of the substrate holder to which power is not supplied; first electric field supply members for supplying an electric field disposed on the substrate holder side of the face of each of the pair of first edge members; and second electric field supply members for supplying an electric field disposed on the substrate holder side of the face of each of the pair of second edge members, the first electric field supply members being configured to extend along the first edge members between a first position on an extension line of a first edge of the second central opening of the rectangle on the side of the second edge member and a second position on an extension line of a second edge opposite the first edge, the second electric field supply members being configured to supply an electric field in pairs away from a third position and a fourth position between the third position on an extension line of a third edge of the second central opening of the rectangle on the side of the first edge member and the fourth position on an extension line of a fourth edge opposite the third edge.

2. The plating apparatus according to claim 1, wherein the first electric field supply members include: a first groove extending from the first position to the second position; a first auxiliary anode disposed inside the first groove; a first shield member disposed in the first groove in a manner to shield the first auxiliary anode; and a first opening formed in the first shield member from the first position to the second position, the second electric field supply members include: a second groove extending from the third position to the fourth position; a second auxiliary anode disposed inside the second groove; a second shield member disposed in the second groove in a manner to shield the second auxiliary anode; a second opening formed in the second shield member away from the third position; and a third opening formed in the second shield member away from the fourth position and the second opening.

3. The plating apparatus according to claim 2, wherein the first electric field supply members further include a first diaphragm disposed in the first opening, ​ ​ The second electric field supplying member further includes a second diaphragm and a third diaphragm disposed at the second opening and the third opening, respectively.

4. The plating apparatus according to claim 2 or 3, wherein The second electric field supplying member has a first region to a fourth region that are equally divided from the third position to the fourth position, The second opening is formed in the first region in the second shielding member away from the third position, The third opening is formed in the fourth region in the second shielding member away from the fourth position.

5. The plating apparatus according to claim 4, wherein The second opening and the third opening are formed to have a dimension in the direction of the second edge member that is smaller than a dimension of the second shielding member in the direction of the second edge member between the second opening and the third opening.

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