Cleaning process method and equipment for improving particle contamination at edge of silicon polished section and silicon polished section
By analyzing the elemental composition of the edge particles of the silicon polishing sheet and its relationship with the material of the box, and determining and implementing the target brushing cycle, the problem that traditional cleaning methods are difficult to remove the edge particles of the silicon polishing sheet is solved, and the cleaning effect is significantly improved.
Patent Information
- Application Number
- CN202510143969.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-02-10
- Publication Date
- 2025-05-09
AI Technical Summary
Traditional RCA standard cleaning method is difficult to completely remove tiny particles on the edge of silicon polishing sheet, resulting in poor cleaning effect.
By obtaining the elemental components of edge particles, identifying their consistency with the elements of the box material, obtaining the relationship data of the impact of the box brushing cycle on the number of edge particles, determining the target brushing cycle, and brushing the box according to this cycle to improve the edge cleaning effect of silicon polishing sheets.
By shortening the brushing cycle of the film box, the cleaning effect of the edges of the crystal-oriented silicon polishing sheet is significantly improved, and the problem of poor epitaxial yield caused by edge particles is solved.
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Figure CN119965128A_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the field of semiconductor manufacturing technology, and in particular to a cleaning process method, equipment and silicon polishing sheet for improving particle contamination at the edge of a silicon polishing sheet. Background Art
[0002] In recent years, with the rapid development of Internet technology, the field of semiconductor manufacturing has developed rapidly. In the manufacture of semiconductor integrated circuits, there will be corresponding cleaning processes before and after almost every process, and after each process cleaning, it is necessary to ensure that the surface particles, metals and other tiny particle pollutants of the product meet the corresponding specification requirements to prevent the subsequent devices from electrical failure abnormalities due to surface cleanliness problems. Therefore, the silicon polishing wafer cleaning process is one of the processes with the most processing times in the manufacture of semiconductor integrated circuits. At present, many cleaning processes and cleaning technologies have been studied, mainly including: RCA (Radio Corporation of America) standard cleaning, ultrasonic cleaning, megasonic cleaning, overflow cleaning and hydrothermal cleaning. The most mainstream of these cleaning methods and technologies is the RCA standard cleaning method, and most semiconductor manufacturers use this cleaning process.
[0003] The RCA standard cleaning method uses SC1 cleaning solution + SC2 cleaning solution or DHF combined cleaning process. In the traditional RAC cleaning process, SC1 solution mainly removes tiny particles adsorbed on the surface of the silicon polishing wafer after polishing, SC2 solution mainly removes metal impurities on the surface of the silicon polishing wafer after polishing, DHF (diluted hydrofluoric acid) solution can slowly corrode the oxide layer on the surface of the silicon polishing wafer, mainly removing metal impurities in the oxide layer film, and SPM solution can effectively remove organic contamination attached to the surface of the silicon polishing wafer after polishing. However, the traditional RCA cleaning process has not made a more detailed classification study on the cleaning process of silicon polishing wafers with different crystal orientations, resulting in that it is difficult to completely remove tiny particles adsorbed on the edge of the silicon polishing wafer under the conditions of the traditional silicon polishing wafer cleaning process. Therefore, on the basis of the traditional RCA standard cleaning method, it is urgent to find a cleaning method that can improve the particle contamination on the edge of the silicon polishing wafer. Summary of the invention
[0004] One purpose of the present application is to provide a cleaning process method, equipment and silicon polishing sheet for improving particle contamination on the edges of silicon polishing sheets, at least to solve the problem of particle contamination on the edges of silicon polishing sheets. In the present application, after abnormal edge particles appear after cleaning the silicon polishing sheet, the elemental composition of the edge particles is obtained; it is identified whether the elemental composition is consistent with the elements contained in the sheet box material; if so, the influence relationship data of the brushing cycle of the sheet box on the number of edge particles is obtained; based on the influence relationship data, the target brushing cycle of the sheet box is determined; in the silicon polishing sheet cleaning process, the sheet box is brushed according to the target brushing cycle. This technical solution, by analyzing the location of edge particle contamination and the particle composition, confirms that there is a correlation between it and the sheet box, and experimentally determines that shortening the brushing cycle of the turnover sheet box can further improve. <111> The cleaning effect of the edge of the crystal-oriented silicon polished wafer solves the problem of poor epitaxial yield caused by edge particle contamination.
[0005] To achieve the above objectives, some embodiments of the present application provide the following aspects:
[0006] In a first aspect, some embodiments of the present application further provide a cleaning process method for improving particle contamination at the edge of a silicon polishing wafer, the method comprising:
[0007] Obtaining the elemental composition of abnormal edge particles after cleaning of a silicon polished wafer;
[0008] Identify whether the element composition is consistent with the elements contained in the cassette material;
[0009] If yes, then obtain the data on the influence of the brushing cycle of the film box on the number of edge particles;
[0010] Determining a target brushing cycle of the film box according to the influence relationship data;
[0011] In the silicon polishing wafer cleaning process, the wafer box is scrubbed according to the target scrubbing cycle.
[0012] In a second aspect, some embodiments of the present application further provide a device for executing the cleaning process method for improving particle contamination at the edge of a silicon polishing wafer as described above.
[0013] In a third aspect, some embodiments of the present application further provide a wafer, wherein the wafer is obtained by using the cleaning process method for improving particle contamination at the edge of a silicon polishing wafer as described above.
[0014] In a fourth aspect, some embodiments of the present application further provide an electronic device, comprising: one or more processors; and a memory storing computer program instructions, wherein the computer program instructions, when executed, cause the processor to perform the steps of the method described above.
[0015] In a fifth aspect, some embodiments of the present application further provide a computer-readable medium having computer program instructions stored thereon, wherein the computer program instructions can be executed by a processor to implement the method as described above.
[0016] In a sixth aspect, some embodiments of the present application further provide a computer program product, comprising a computer program / instruction, which implements the steps of the method described above when executed by a processor.
[0017] Compared with the related art, the solution provided in the embodiment of the present application obtains the elemental composition of the edge particles after abnormal edge particles appear after the silicon polishing wafer is cleaned; identifies whether the elemental composition is consistent with the elements contained in the wafer box material; if so, obtains the influence relationship data of the wafer box's brushing cycle on the number of edge particles; determines the target brushing cycle of the wafer box based on the influence relationship data; and brushes the wafer box according to the target brushing cycle in the silicon polishing wafer cleaning process. This technical solution, by analyzing the location of edge particle contamination and particle composition, confirms that there is a correlation between it and the wafer box, and experimentally determines that shortening the brushing cycle of the turnover wafer box can further improve <111> The cleaning effect of the edge of the crystal-oriented silicon polished wafer solves the problem of poor epitaxial yield caused by edge particle contamination. BRIEF DESCRIPTION OF THE DRAWINGS
[0018] One or more embodiments are exemplarily described by pictures in the corresponding drawings, and these exemplified descriptions do not constitute limitations on the embodiments. Elements with the same reference numerals in the drawings represent similar elements, and unless otherwise stated, the figures in the drawings do not constitute proportional limitations.
[0019] Figure 1 An exemplary flow chart of a cleaning process method for improving particle contamination at the edge of a silicon polishing wafer provided according to some embodiments of the present application;
[0020] Figure 2 According to some embodiments of the present application, <111> Schematic diagram of the edge particles of a crystal-oriented silicon polished wafer;
[0021] Figure 3 According to some embodiments of the present application, <100> Schematic diagram of the edge particles of a crystal-oriented silicon polished wafer;
[0022] Figure 4 An exemplary structural diagram of the electronic device is disclosed. DETAILED DESCRIPTION
[0023] In order to make the purpose, technical solution and advantages of the embodiments of the present application clearer, the technical solution in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.
[0024] First embodiment
[0025] The first embodiment of the present application relates to a cleaning process method for improving particle contamination at the edge of a silicon polishing wafer. Figure 1 As shown, the method may include the following steps:
[0026] Step S101, after abnormal edge particles appear on the silicon polishing wafer after cleaning, obtaining the elemental composition of the edge particles;
[0027] Abnormal edge particles appear after cleaning the silicon polishing wafer, which may be a situation where the number of edge particles increases significantly after cleaning the silicon polishing wafer, indicating that a good cleaning effect is not achieved. In this case, the edge particles can be further obtained and their elemental composition can be analyzed to obtain all the elemental components contained therein.
[0028] In one embodiment, optionally, the silicon polishing sheet is <111> Crystalline silicon polished wafer.
[0029] Among them, the crystal orientation of silicon polished wafer refers to the specific direction of atomic arrangement in silicon crystal. <100> In silicon crystals with different crystal orientations, atoms are arranged in a regular and relatively simple manner on a specific plane. From the perspective of crystal structure, its atomic surface density and other characteristics make it exhibit unique properties in some processes. For example, when oxidizing and growing silicon dioxide films, <100> The quality of the oxide layer grown in the crystal direction is relatively good, and the interface state density is often low, which is very beneficial for the subsequent production of high-performance semiconductor devices (such as MOS transistors in integrated circuits, etc.), because a good oxide layer and silicon substrate interface can reduce adverse effects such as carrier scattering, which helps to improve the electrical performance of the device. <100> The silicon polished wafer with different crystal orientation facilitates accurate pattern transfer and anisotropic etching control. During anisotropic etching, under the action of certain corrosive liquids, the silicon wafer moves along the <100> The etching rate of the crystal orientation is significantly different from that of other crystal orientations, so this feature can be used to produce micro-nano devices with specific shapes and structures. For example, when making silicon micromechanical structures (MEMS devices), the sidewall shape of the structure can be controlled more accurately. It is also a crystal orientation silicon polishing wafer that is widely used in integrated circuit manufacturing and is suitable for most advanced manufacturing technology processes such as CMOS processes. <111> The atoms of silicon crystals in the crystal orientation are arranged more closely, and the stacking method of its atomic planes determines that it has a higher atomic surface density, which makes it outstanding in some physical properties. For example, its mechanical strength is relatively high, which is more advantageous in some application scenarios that need to withstand greater stress. From an electrical point of view, <111> The carrier migration characteristics in the crystal-oriented silicon polished wafer are also related to <100> The crystal orientation is different, but because its atoms are closely arranged, the diffusion behavior of impurity atoms will be relatively complicated during the process of impurity diffusion, and the diffusion speed, distribution uniformity, etc. <100> There are differences in crystal orientation. In the manufacture of some special semiconductor devices, <111> Crystalline silicon polished wafers, such as some types of power semiconductor devices, such as some high-voltage thyristors, can better meet the requirements of high withstand voltage and high current by using their high mechanical strength and specific electrical properties. In addition, when performing some special processes that utilize crystal anisotropy (such as using a specific etching solution for selective etching to form a special morphology structure, etc.), <111> Crystalline silicon polished wafers can produce <100> The completely different etching effects of the crystal orientation can produce micro-nano or macro structures with unique shapes, which are suitable for the production of MEMS devices such as sensors that are sensitive to crystal orientation. <110> The atomic arrangement of silicon crystals in the crystal direction presents another regular form, which is between <100> and <111> There is a unique lattice symmetry and atomic distribution between crystal directions.It also has its own characteristics in electrical and mechanical properties. For example, under certain conditions, the anisotropy of electron migration is different from that of the other two common crystal directions, which may have potential advantages in making some devices that require specific carrier transport properties. <110> Crystalline silicon polished wafers, for example, when studying quantum devices such as silicon-based quantum bits, <110> The crystal structure characteristics of the crystal orientation may be beneficial to the regulation of quantum states and the utilization of related physical phenomena; in the integration of some optoelectronic devices, its special crystal orientation properties may also help to improve performance indicators such as photoelectric conversion efficiency, but its application range is relatively limited at present. <100> Crystal orientation is not so broad, but with the development of related cutting-edge technologies, it is gradually receiving more attention.
[0030] Figure 2 According to some embodiments of the present application, <111> Schematic diagram of the edge particles of a crystal-oriented silicon polished wafer. Figure 3 According to some embodiments of the present application, <100> Schematic diagram of the edge particles of a crystal-oriented silicon polished wafer. Figure 2 and Figure 3 As shown, 6 inches <111> After cleaning the crystal silicon polishing wafer, the edge small particles exceeded the standard abnormal phenomenon, and the 6-inch <100> After cleaning, there is basically no edge particle contamination on the crystal-oriented silicon polished wafer. Therefore, under the premise of the traditional RCA standard cleaning method, it is urgent to find a method that can improve the 6-inch <111> Cleaning process for cleaning effect of edge of crystal-oriented silicon polished wafer.
[0031] Step S102, identifying whether the element composition is consistent with the element contained in the film box material;
[0032] In this solution, it can be determined whether the obtained elemental composition is consistent with the material of the film box to determine whether the edge particles are related to the film box.
[0033] Specifically, EDX analysis can be used to test the elemental composition of edge particles. The detection principle is: when the electron beam irradiates the silicon polished wafer sample, the electrons in the silicon polished wafer atoms are excited, generating inner electron vacancies, and when the outer electrons jump back to the inner layer to fill the vacancies, characteristic X-rays with specific energy are released. The EDX detector collects these characteristic X-rays, measures their energy and intensity, determines the type of element based on the energy value of the characteristic X-rays, and estimates the relative content of the element in the sample based on the intensity. EDX analysis is usually used in conjunction with a scanning electron microscope (SEM) or a transmission electron microscope (TEM). For example, in a SEM-EDX system, the high-energy electron beam generated by the electron gun is focused on the surface of the silicon polished wafer to excite characteristic X-rays. The silicon polished wafer sample generally needs to be simply pre-processed, such as cutting it into a suitable size and fixing it on the sample stage with conductive glue to ensure good conductivity and stability, so that the electron beam can effectively excite the sample to produce characteristic X-rays.
[0034] The detection process generally includes: placing the prepared silicon polished wafer sample into the sample chamber of the electron microscope, adjusting the acceleration voltage, current and other parameters of the electron beam to obtain the best excitation effect; irradiating the sample with the electron beam, and the characteristic X-rays generated are collected by the detector, and the data acquisition system records the energy and intensity information of the X-rays to form an EDX spectrum; processing and analyzing the spectrum through professional analysis software to identify the impurity elements present in the silicon polished wafer, and calculating the relative content of the impurity elements based on information such as peak intensity.
[0035] This solution uses EDX analysis and testing, which can detect multiple impurity elements in silicon polishing wafers at one time, such as common metal impurities such as iron, copper, nickel, etc., and other non-metallic impurities, and can quickly obtain the impurity element composition information of silicon polishing wafers; it has a high detection sensitivity for trace elements, can detect impurity elements with low content, and can detect ppm-level or even ppb-level impurities in silicon polishing wafers; during the detection process, it is almost unnecessary to chemically treat or destroy the silicon polishing wafer samples, and can maintain the original state and performance of the silicon polishing wafers, which is suitable for the detection of finished silicon polishing wafers or precious samples; combined with the imaging function of the electron microscope, the microscopic area on the surface of the silicon polishing wafer can be analyzed by fixed point analysis or line scanning and surface scanning, so as to understand the distribution of impurity elements on the surface of the silicon polishing wafer, which is helpful to study the source and diffusion mechanism of impurities.
[0036] For 6 inches <111> After cleaning, abnormal small particles appeared on the edge of the crystal-oriented silicon polished wafer. Through EDX analysis and testing of the elemental composition of the edge particles, it was found that they were mainly Si / C / F, which was consistent with the elements contained in the Teflon material of the cleaned wafer box, so the wafer box was likely to be contaminated; and the 6-inch <100> After cleaning, there is no edge particle contamination on the crystal-oriented silicon polishing wafer. The EDX analysis and testing of the elemental composition of the particles on the surface of the polishing wafer show that it is mainly Si, and there are no other impurities or pollutants on the surface.
[0037] Step S103, if yes, then obtain the influence relationship data of the scrubbing cycle of the film box on the number of edge particles;
[0038] Among them, for the wafer box, its own brushing cycle can be one of the factors affecting the number of edge particles of the silicon polishing wafer. Therefore, it is necessary to statistically analyze the influence of the brushing cycle of the wafer box on the number of edge particles.
[0039] In one embodiment, optionally, obtaining the influence relationship data of the scrubbing cycle of the film box on the number of edge particles includes:
[0040] A wafer box with at least two scrubbing cycles is used to hold the silicon polishing wafer;
[0041] Obtaining the number of particles after cleaning the silicon polishing wafer corresponding to the at least two scrubbing cycles;
[0042] The influence relationship data of the brushing cycle of the film box on the number of edge particles is determined according to the number of particles.
[0043] In this scheme, specifically, it can be found through experimental research that the cleanliness of the film box itself is one of the important factors affecting the cleaning effect of the silicon polishing wafer edge. The experimental results show that shortening the turnover film box brushing cycle can further improve <111> Cleaning effect of edge of crystal-oriented silicon polished wafer.
[0044] 6 inches <111> Taking the crystal silicon polishing wafer as an example, a turnover wafer box with a wafer box brushing cycle of 1 month, 2 months, 3 months, and 6 months was used. The experimental wafer box was processed according to the conventional final cleaning process, and the SP1 test product surface small particles were tested to verify the influence of different wafer box brushing cycles on the cleaning effect of the silicon polishing wafer (see Table 1 below).
[0045]
[0046] Table 1 Effect of the cassette cleaning cycle on the number of small particles after cleaning the silicon polishing wafer
[0047] In one embodiment, optionally, obtaining the number of particles after cleaning the silicon polishing wafer corresponding to the at least two scrubbing cycles includes:
[0048] The number of particles in at least one particle size level of the silicon polishing wafer after cleaning corresponding to each scrubbing cycle is obtained.
[0049] In one embodiment, specifically, the number of particles of at least one particle size grade includes:
[0050] The number of particles greater than or equal to 0.09um and less than 0.16um;
[0051] The number of particles greater than or equal to 0.16um and less than 0.2um;
[0052] The number of particles greater than or equal to 0.2um and less than 0.3um;
[0053] And, the number of particles greater than or equal to 0.3um.
[0054] In one embodiment, specifically, the at least two brushing cycles include brushing cycles of 1 month, 2 months, 3 months and 6 months.
[0055] From the number of small particles on the surface of the above four groups of experimental films, it can be seen that when the film box brushing cycle is 2 months, the number of small particles on the surface of the silicon polishing film after cleaning is slightly increased compared with the film box brushed once a month. When the film box brushing cycle is 3 months, the small particles on the surface of the silicon polishing film after cleaning increase significantly. When the film box brushing cycle is 6 months, the number of small particles on the surface of the silicon polishing film after cleaning increases exponentially compared with the 1-month, 2-month, and 3-month film box brushing cycles, especially for small particles below 0.09um. Although 0.2um particles and 0.3um particles will also increase, the overall increase is not obvious. It can be seen that the length of the film box brushing cycle more affects the cleaning effect of small particles with a smaller particle size below 0.16um.
[0056] Step S104, determining a target brushing cycle of the film box according to the influence relationship data;
[0057] After the influence relationship data is obtained, the target brushing cycle of the film box can be determined according to the influence relationship data.
[0058] In one embodiment, optionally, determining the target scrubbing cycle of the sheet box according to the impact relationship data includes:
[0059] According to the influence relationship data, the brushing cycle with the least number of edge particles of the silicon polishing wafer is determined as the target brushing cycle of the wafer box.
[0060] From the above experimental results, we can see that 6 inches <111> The cleaning effect of the crystal silicon polishing wafer is greatly affected by the wafer box brushing cycle. The longer the wafer box brushing interval, the worse the cleanliness of the wafer box itself, which leads to worse cleaning effect on the edge of the silicon polishing wafer and more small particles on the product surface.
[0061] Combined with EDX analysis of the elemental composition of the test particles, it is also shown that the cleanliness of the wafer box itself affects the particle level at the edge of the silicon polishing wafer.
[0062] Therefore, it can be determined that the turnover film box used for cleaning silicon polishing wafers needs to be regularly cleaned once a month to ensure the cleanliness of the film box itself in order to improve <111> The effect of cleaning the edge of the crystal-oriented silicon polished wafer is to reduce the edge particle level.
[0063] Step S105, in the silicon polishing wafer cleaning process, the wafer box is scrubbed according to the target scrubbing cycle.
[0064] After determining the target brushing cycle, the wafer box can be brushed regularly to improve the edge cleaning degree of the silicon polishing wafer.
[0065] The technical solution provided in this embodiment obtains the elemental composition of the edge particles after abnormal edge particles appear after cleaning the silicon polishing wafer; identifies whether the elemental composition is consistent with the elements contained in the wafer box material; if so, obtains the influence relationship data of the wafer box's brushing cycle on the number of edge particles; determines the target brushing cycle of the wafer box based on the influence relationship data; and brushes the wafer box according to the target brushing cycle in the silicon polishing wafer cleaning process. This technical solution confirms the correlation between the edge particle contamination location and particle composition and the wafer box through experimental determination, and shortening the brushing cycle of the turnover wafer box can further improve the efficiency of the wafer box. <111> The cleaning effect of the edge of the crystal-oriented silicon polished wafer solves the problem of poor epitaxial yield caused by edge particle contamination.
[0066] Second embodiment
[0067] The second embodiment of the present application relates to a device for executing the cleaning process method for improving particle contamination at the edge of a silicon polishing wafer as described in the above embodiments.
[0068] It can be understood that the equipment protected by this scheme has the corresponding beneficial effects of the above-mentioned cleaning process method for improving particle contamination on the edge of silicon polishing wafers, which will not be described in detail here.
[0069] Third embodiment
[0070] The third embodiment of the present application relates to a silicon polishing sheet, which is obtained by using the cleaning process for improving particle contamination at the edge of the silicon polishing sheet as described in the above embodiments.
[0071] Further, the silicon polishing sheet is <111> Crystalline silicon polished wafer.
[0072] It can be understood that the silicon polishing wafer protected by this solution has the corresponding beneficial effects of the above-mentioned cleaning process method for improving particle contamination on the edge of the silicon polishing wafer, which will not be described in detail here.
[0073] In addition, some embodiments of the present application also provide an electronic device. The electronic device may be a digital computer in various forms, such as a laptop computer, a desktop computer, a workbench, a personal digital assistant, a server, a blade server, a mainframe computer, etc. The electronic device may also be a mobile device in various forms, such as a personal digital assistant, a cellular phone, a smart phone, a wearable device, and other similar computing devices.
[0074] The electronic device includes: one or more processors; and a memory storing computer program instructions, wherein when the computer program instructions are executed, the processor executes the steps of the method provided in any one or more of the above embodiments. Figure 4An exemplary structural diagram of the electronic device is disclosed. Figure 4 As shown, the electronic device includes: one or more processors 401, memory 402, and interfaces for connecting various components, including high-speed interfaces and low-speed interfaces. The various components are connected to each other using different buses and can be installed on a common mainboard or installed in other ways as needed. The processor can process instructions executed in the electronic device, including instructions stored in or on the memory to display the graphical information of the GUI on an external input / output device (such as a display device coupled to the interface). In some other embodiments, if necessary, multiple processors and / or multiple buses can be used together with multiple memories and multiple memories. Similarly, multiple electronic devices can be connected, and each device provides some necessary operations (for example, as a server array, a group of blade servers, or a multi-processor system). Among them, the components shown in this article, their connections and relationships, and their functions are only used as examples, and are not intended to limit the implementation of the present application described and / or required herein.
[0075] The electronic device may further include: an input device 403 and an output device 404. The processor 401, the memory 402, the input device 403 and the output device 404 may be connected via a bus or other means. Figure 4 The example of connecting through bus is taken in the following.
[0076] The input device 403 can receive input digital or character information, and generate signal input related to the user settings and function control of the electronic device, such as a touch screen, a keypad, a mouse, a track pad, a touch pad, an indicator bar, one or more mouse buttons, a trackball, a joystick and other input devices. The output device 404 may include a display device, an auxiliary lighting device (e.g., an LED) and a tactile feedback device (e.g., a vibration motor), etc. The display device may include, but is not limited to, a liquid crystal display (LCD), a light emitting diode (LED) display and a plasma display. In some embodiments, the display device may be a touch screen.
[0077] To provide interaction with a user, the electronic device may be a computer. The computer has: a display device (e.g., a CRT (cathode ray tube) or LCD (liquid crystal display) monitor) for displaying information to the user; and a keyboard and a pointing device (e.g., a mouse or a trackball), through which the user can provide input to the computer. Other types of devices may also be used to provide interaction with the user; for example, the feedback provided to the user may be any form of sensory feedback (e.g., visual feedback, auditory feedback, or tactile feedback); and input from the user may be received in any form (including acoustic input, voice input, or tactile input).
[0078] In the embodiments of the present application, a computer program / instruction is stored on a computer-readable medium, and when the computer program / instruction is executed by a processor, the steps of the method provided by any one or more of the above embodiments are implemented. The computer-readable medium may be included in the electronic device described in the above embodiments; or it may exist independently without being assembled into the device. The above computer-readable medium carries one or more computer-readable instructions.
[0079] The memory 402 can be used as a non-transient computer-readable storage medium, which can be used to store non-transient software programs, non-transient computer executable programs and modules. The processor 401 executes various functional applications and data processing of the server by running the non-transient software programs, instructions and modules stored in the memory 402, so as to implement the program instructions / modules corresponding to the method provided by any one or more of the above embodiments in the embodiments of the present application.
[0080] The memory 402 may include a program storage area and a data storage area, wherein the program storage area may store an operating system, an application required for at least one function; the data storage area may store data created according to the use of the electronic device, etc. In addition, the memory 402 may include a high-speed random access memory, and may also include a non-transient memory, such as at least one disk storage device, a flash memory device, or other non-transient solid-state storage devices. In some embodiments, the memory 402 may optionally include a memory remotely arranged relative to the processor 401, and these remote memories may be connected to the electronic device via a network. Examples of the above-mentioned network include, but are not limited to, the Internet, an intranet, a local area network, a mobile communication network, and combinations thereof.
[0081] It should be noted that the computer-readable medium described in the present application may be a computer-readable signal medium or a computer-readable storage medium or any combination of the above two. The computer-readable medium may be, for example, but not limited to, an electrical, magnetic, optical, electromagnetic, infrared or semiconductor system, device or device, or any combination of the above. More specific examples of computer-readable storage media may include, but are not limited to: an electrical connection with one or more wires, a portable computer disk, a hard disk, a random access memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber, a portable compact disk read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination of the above. In the present application, a computer-readable medium may be any tangible medium containing or storing a program that can be used by or in combination with an instruction execution system, device or device.
[0082] Computer readable media include permanent and non-permanent, removable and non-removable media, and can be implemented by any method or technology to store information. Information can be computer readable instructions, data structures, modules of programs or other data. Examples of computer storage media include, but are not limited to, phase change memory (PRAM), static random access memory (SRAM), dynamic random access memory (DRAM), other types of random access memory (RAM), read-only memory (ROM), electrically erasable programmable read-only memory (EEPROM), flash memory or other memory technology, read-only compact disk (CD-ROM), digital versatile disk (DVD) or other optical storage, magnetic cassettes, magnetic tape disk storage or other magnetic storage devices or any other non-transmission medium that can be used to store information that can be accessed by a computing device.
[0083] Computer program code for performing the operations of the present application may be written in one or more programming languages or a combination thereof, including object-oriented programming languages, such as Java, Smalltalk, C++, and conventional procedural programming languages, such as "C" language or similar programming languages. The program code may be executed entirely on the user's computer, partially on the user's computer, as an independent software package, partially on the user's computer and partially on a remote computer, or entirely on a remote computer or server. In the case of a remote computer, the remote computer may be connected to the user's computer via any type of network, including a local area network (LAN) or a wide area network (WAN), or may be connected to an external computer (e.g., using an Internet service provider to connect via the Internet).
[0084] In the above-described embodiments, it can be implemented in whole or in part by software, hardware, firmware or any combination thereof. For example, it can be implemented by using an application specific integrated circuit (ASIC), a general-purpose computer or any other similar hardware device. In certain embodiments, the software program of the present application can be executed by a processor to implement the above steps or functions. Similarly, the software program of the present application (including relevant data structures) can be stored in a computer-readable recording medium, for example, a RAM memory, a magnetic or optical drive or a floppy disk and similar devices. In addition, some steps or functions of the present application can be implemented by hardware, for example, as a circuit that cooperates with a processor to perform each step or function.
[0085] The computer program product provided in the embodiment of the present application includes one or more computer programs / instructions, and when the computer program / instructions are executed by the processor, the process or function described in the embodiment of the present application is generated in whole or in part. The computer may be a general-purpose computer, a special-purpose computer, a computer network, or other programmable devices. The computer instructions may be stored in a computer-readable storage medium, or transmitted from one computer-readable storage medium to another computer-readable storage medium, for example, the computer instructions may be transmitted from a website site, a computer, a server or a data center by wired (e.g., coaxial cable, optical fiber, digital subscriber line (DSL)) or wireless (e.g., infrared, wireless, microwave, etc.) mode to another website site, computer, server or data center. The computer-readable storage medium may be any available medium that a computer can access or a data storage device such as a server or a data center that includes one or more available media integrations. The available medium may be a magnetic medium, (e.g., a floppy disk, a hard disk, a tape), an optical medium (e.g., a DVD), or a semiconductor medium (e.g., a solid-state drive so lid state di sk (SSD)), etc.
[0086] The flow chart or block diagram in the accompanying drawings shows the possible architecture, function and operation of the equipment, method and computer program product according to various embodiments of the present application. In this regard, each box in the flow chart or block diagram can represent a module, a program segment or a part of a code, and the module, the program segment or a part of the code contains one or more executable instructions for realizing the specified logical function. It should also be noted that in some alternative implementations, the functions marked in the box can also occur in a different order from the order marked in the accompanying drawings. For example, two boxes represented in succession can actually be executed substantially in parallel, and they can sometimes be executed in the opposite order, depending on the functions involved. It should also be noted that each box in the block diagram and / or flow chart, and the combination of the boxes in the block diagram and / or flow chart can be implemented with a dedicated system for hardware that performs a specified function or operation, or can be implemented with a combination of dedicated hardware and computer instructions.
[0087] The scope of the present application is defined by the appended claims rather than the above description, and it is intended that all changes that fall within the meaning and scope of the equivalent elements of the claims are included in the present application. Any figure mark in the claims should not be regarded as limiting the claims involved. In addition, it is clear that the word "comprising" does not exclude other units or steps, and the singular does not exclude the plural. Multiple units or devices stated in the device claim may also be implemented by one unit or device through software or hardware. The words "first", "second", etc. are only used to distinguish the description, and do not indicate any particular order, nor can they be understood as indicating or implying relative importance.
[0088] The above is only a specific implementation of the present application, but the protection scope of the present application is not limited thereto. Any person skilled in the art can easily mention changes or substitutions within the technical scope disclosed in the present application, which should be included in the protection scope of the present application. Therefore, the protection scope of the present application should be based on the protection scope of the claims, and the above embodiments should be regarded as exemplary and non-restrictive.
Claims
1. A cleaning process for improving particle contamination at the edge of a silicon polishing wafer, characterized in that: The method comprises: Obtaining the elemental composition of abnormal edge particles after cleaning of a silicon polished wafer; Identify whether the element composition is consistent with the elements contained in the cassette material; If yes, then obtain the data on the influence of the brushing cycle of the film box on the number of edge particles; Determining a target brushing cycle of the film box according to the influence relationship data; In the silicon polishing wafer cleaning process, the wafer box is scrubbed according to the target scrubbing cycle.
2. The method according to claim 1, characterized in that Obtain data on the effect of the cassette brushing cycle on the number of edge particles, including: A wafer box with at least two scrubbing cycles is used to hold the silicon polishing wafer; Obtaining the number of particles after cleaning the silicon polishing wafer corresponding to the at least two scrubbing cycles; The influence relationship data of the brushing cycle of the film box on the number of edge particles is determined according to the number of particles.
3. The method according to claim 2, characterized in that Obtaining the number of particles after cleaning the silicon polishing wafer corresponding to the at least two scrubbing cycles comprises: The number of particles in at least one particle size level of the silicon polishing wafer after cleaning corresponding to each scrubbing cycle is obtained.
4. The method according to claim 3, characterized in that The number of particles of at least one particle size class includes: The number of particles greater than or equal to 0.09um and less than 0.16um; The number of particles greater than or equal to 0.16um and less than 0.2um; The number of particles greater than or equal to 0.2um and less than 0.3um; And, the number of particles greater than or equal to 0.3um.
5. The method according to claim 2, characterized in that: The at least two brushing cycles include brushing cycles of 1 month, 2 months, 3 months and 6 months.
6. The method according to claim 1, characterized in that Determining a target brushing cycle of the film box according to the influence relationship data includes: According to the influence relationship data, the brushing cycle with the least number of edge particles of the silicon polishing wafer is determined as the target brushing cycle of the wafer box.
7. The method according to any one of claims 1 to 6, characterized in that The silicon polishing sheet is <111> Crystalline silicon polished wafer.
8. A device, characterized in that: The device is used to perform the cleaning process method for improving particle contamination at the edge of a silicon polishing wafer as described in any one of claims 1 to 7.
9. A silicon polishing sheet, characterized in that: The silicon polishing wafer is obtained by using the cleaning process for improving particle contamination at the edge of the silicon polishing wafer as described in any one of claims 1 to 7.
10. The silicon polishing sheet according to claim 9, characterized in that: The silicon polishing sheet is <111> Crystalline silicon polished wafer.