Semiconductor module with double-sided heat dissipation structure and manufacturing method thereof

Abstract

The invention provides a semiconductor module with a double-sided heat dissipation structure and a manufacturing method thereof. A semiconductor module having a double-sided heat dissipation structure according to one embodiment of the present invention comprises: a first heat dissipation substrate and a second heat dissipation substrate provided facing each other; a guide stack which is disposed between the first heat dissipation substrate and the second heat dissipation substrate and is patterned to form an opening region for mounting a semiconductor die; and a semiconductor die mounted within the opening region. According to the semiconductor module having the double-sided heat dissipation structure of the present invention, a gap between the first heat dissipation substrate and the second heat dissipation substrate can be ensured without using a conventional spacer.

Description

Technical Field

[0001] The present invention relates to a semiconductor module, and more particularly to a semiconductor module with a double-sided heat dissipation structure. Background Art

[0002] Recently, as the demand for semiconductors in various fields has increased, various research and development efforts have been conducted to improve the functions of semiconductors under specific conditions in addition to the main functions of semiconductors.

[0003] Generally speaking, a semiconductor module includes at least one semiconductor device in a package. In particular, a semiconductor module including a semiconductor device whose physical properties change due to an increase in heat generated by high internal pressure and high current includes a heat dissipation unit for heat dissipation. Semiconductor modules including a heat dissipation unit are divided into semiconductor modules with a single-sided heat dissipation structure and semiconductor modules with a double-sided heat dissipation structure.

[0004] In particular, a semiconductor module having a double-sided heat dissipation structure can release heat from both the upper and lower parts of each semiconductor device, and therefore is known to be very beneficial to the heat dissipation effect.

[0005] The semiconductor module with the above-mentioned double-sided heat dissipation structure needs to install semiconductor devices separately on the heat dissipation substrate. Therefore, it is easy to produce thickness deviation between the semiconductor device and the heat dissipation substrate. The thickness deviation may not only cause poor adhesion between the semiconductor device and the heat dissipation substrate, but also cause difficulty in process control when manufacturing the semiconductor module. Summary of the invention

[0006] Technical issues

[0007] The present invention is proposed to solve the above-mentioned problem, and an object of the present invention is to provide a semiconductor module with a double-sided heat dissipation structure and a manufacturing method thereof, which can ensure a gap between a first heat dissipation substrate and a second heat dissipation substrate.

[0008] Furthermore, another object of the present invention is to provide a semiconductor module with a double-sided heat dissipation structure and a manufacturing method thereof, wherein a plurality of semiconductor bare chips are manufactured as one component and combined with a first heat dissipation substrate and a second heat dissipation substrate.

[0009] Technical Solution

[0010] In order to achieve the above-mentioned purpose, a semiconductor module with a double-sided heat dissipation structure in one embodiment of the present invention includes: a first heat dissipation substrate and a second heat dissipation substrate, which are arranged facing each other; a guide stack, which is arranged between the first heat dissipation substrate and the second heat dissipation substrate and is patterned with an opening area for installing a semiconductor die; and a semiconductor die, which is installed in the opening area.

[0011] Furthermore, another embodiment of the present invention provides a method for manufacturing a semiconductor module having a double-sided heat dissipation structure, which includes: a step of forming a guide stack having an opening area for mounting a semiconductor bare chip on a substrate to thereby manufacture a guide assembly; a step of combining the second surface of the substrate to a first heat dissipation substrate; a step of mounting the semiconductor bare chip in an area of ​​the first surface of the substrate corresponding to the opening area; and a step of combining a second heat dissipation substrate on the semiconductor bare chip and the guide stack.

[0012] Furthermore, another embodiment of the present invention provides a method for manufacturing a semiconductor module having a double-sided heat dissipation structure, which comprises: a step of forming a guide stack having an opening area for mounting a semiconductor bare chip on a first heat dissipation substrate; a step of mounting the semiconductor bare chip in an area of ​​the first heat dissipation substrate exposed by the opening area; and a step of combining a second heat dissipation substrate on the semiconductor bare chip and the guide stack.

[0013] Technical Effects

[0014] According to the present invention, since only one guide component capable of mounting multiple semiconductor bare chips needs to be combined between the first heat dissipation substrate and the second heat dissipation substrate, thickness deviation between the semiconductor bare chips and the heat dissipation substrate can be prevented, and process control is simpler when manufacturing a semiconductor module with a double-sided heat dissipation structure.

[0015] Furthermore, according to the present invention, since a plurality of semiconductor bare chips are mounted on one guide member, flatness is improved when combined with the first heat dissipation substrate and the second heat dissipation substrate, and productivity can be increased.

[0016] Furthermore, according to the present invention, since a plurality of semiconductor bare chips are mounted in the opening region formed on the guide stack, it is possible to prevent the semiconductor bare chips from being damaged during the high-temperature pressure sintering process. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 FIG. 1 is a schematic diagram schematically showing the configuration of a semiconductor module having a double-sided heat dissipation structure according to a first embodiment of the present invention.

[0018] Figure 2 It is a schematic diagram Figure 1 A schematic diagram of the composition of a semiconductor die is shown.

[0019] Figure 3 It is shown Figure 1 A schematic diagram of the general structure of the guide assembly shown.

[0020] Figure 4 FIG. 1 is a schematic diagram schematically showing the configuration of a semiconductor module having a double-sided heat dissipation structure according to a second embodiment of the present invention.

[0021] Figure 5 is a schematic circuit diagram of a power device using a semiconductor module with a double-sided heat dissipation structure according to an embodiment of the present invention.

[0022] 6A to 6F 1 is a schematic cross-sectional view showing a method for manufacturing a semiconductor module having a double-sided heat dissipation structure according to a first embodiment of the present invention.

[0023] 7A to 7E FIG. 1 is a schematic cross-sectional view showing a method for manufacturing a semiconductor module having a double-sided heat dissipation structure according to a second embodiment of the present invention.

[0024] Description of Reference Numerals

[0025] 100, 400: semiconductor module with double-sided heat dissipation structure;

[0026] 110: semiconductor die;

[0027] 120: guide assembly;

[0028] 122: Substrate;

[0029] 124, 420: Guided pile;

[0030] 126: opening area;

[0031] 130: a first heat dissipation substrate;

[0032] 140: Second heat dissipation substrate DETAILED DESCRIPTION

[0033] Throughout the specification, the same reference numerals represent substantially the same constituent elements. In the following description, detailed descriptions that are not related to the core structure of the present invention and are related to the functions of the structures known in the technical field of the present invention have been omitted. The meanings of the terms described in this specification should be understood as follows.

[0034] The advantages and features of the present invention and the methods for achieving the same can be made clearer by referring to the embodiments described in conjunction with the attached drawings. However, the present invention is not limited to the embodiments disclosed below, but will be implemented in various forms. The embodiments are only provided to make the disclosure of the present invention more complete and to fully inform the scope of the present invention to the ordinary technicians in the technical field to which the present invention belongs. The present invention will be defined by the scope of the claims.

[0035] The shapes, sizes, proportions, angles, quantities, etc. shown in the accompanying drawings for the purpose of illustrating the embodiments of the present invention are merely illustrative, and the present invention is not limited to the contents shown in the drawings. Throughout the entire specification, the same reference numerals refer to the same constituent elements. Furthermore, in the process of describing the present invention, if it is determined that the specific description of the related known technology will confuse the gist of the present invention, the detailed description thereof will be omitted.

[0036] The terms "including", "having", and "comprising" mentioned in this specification may include other parts unless the term "only to" is used. When a constituent element is expressed in a singular form, the plural form is included unless otherwise specified.

[0037] When interpreting constituent elements, they should be understood as including the range of error even if there is no additional explicit description.

[0038] When describing the positional relationship, for example, when describing the positional relationship of two parts by using "~on", "~above", "~below", "~on one side", etc., unless "just" or "directly" is used, one or more other parts may be arranged between the two parts.

[0039] When describing a temporal relationship, for example, when describing a temporal sequence using “after,” “continuing from,” “after,” “before,” etc., discontinuous situations may also be included unless “just” or “directly” is used.

[0040] In order to describe various components, the terms first, second, etc. are used, but these components are not limited to these terms. These terms are used only to distinguish one component from other components. Therefore, the first component mentioned below can also be the second component within the technical concept of the present invention.

[0041] The term "at least one" should be understood to include all combinations that can be obtained through more than one related item. For example, the meaning of "at least one of the first item, the second item, and the third item" can mean not only the first item, the second item, or the third item, but also all combinations of more than two of the first item, the second item, and the third item.

[0042] The various features of the multiple embodiments of the present invention may be partially or completely combined or combined with each other, and various linkages and drives may be technically realized. The various embodiments may be implemented independently of each other, or may be implemented together through an associated relationship.

[0043] Hereinafter, embodiments of the present specification will be described in detail with reference to the accompanying drawings.

[0044] Figure 1FIG. 2 is a schematic diagram schematically showing the structure of a semiconductor module having a double-sided heat dissipation structure according to a first embodiment of the present invention. Figure 1 As shown, a semiconductor module (100, hereinafter referred to as “semiconductor module”) with a double-sided heat dissipation structure according to a first embodiment of the present invention includes at least one semiconductor bare chip 110, a guide component 120, a first heat dissipation substrate 130 and a second heat dissipation substrate 140.

[0045] The semiconductor die 110 represents a semiconductor device manufactured by a wafer-level process. In one embodiment, the semiconductor device included in the semiconductor die 110 is a power semiconductor device. The power semiconductor device performs an operation of converting power supplied from a power supply unit such as a battery into power for driving a motor through a switching operation.

[0046] As an example, the semiconductor die 110 includes a power semiconductor device such as a gate turn-off thyristor (GTO), an insulated gate bipolar transistor (IGBT), or a metal oxide semiconductor field effect transistor (MOSFET), or includes a semiconductor device such as a diode.

[0047] Figure 2 FIG. 2 is a diagram schematically showing the structure of a semiconductor die according to an embodiment of the present invention. Figure 2 As shown, the semiconductor die 110 according to an embodiment of the present invention includes a first electrode 210 , a semiconductor layer 220 and a second electrode 230 .

[0048] The first electrode 210 is disposed on the semiconductor layer 220. In one embodiment, when the semiconductor die 110 includes a power semiconductor device such as a MOSFET, the first electrode 210 includes a gate electrode 212 and a source electrode 214. In this case, the gate electrode 212 and the source electrode 214 are electrically isolated from each other. As another example, when the semiconductor die 110 includes a power semiconductor device such as an IGBT, the first electrode 210 includes a gate electrode 212 and an emitter electrode 214. In this case, the gate electrode 212 and the emitter electrode 214 are electrically isolated from each other.

[0049] The second electrode 230 is disposed below the semiconductor layer 220. In one embodiment, when the semiconductor die 110 includes a power semiconductor device such as a MOSFET, the second electrode 230 includes a drain electrode. As another example, when the semiconductor die 110 includes a power semiconductor device such as an IGBT, the second electrode 230 includes a collector electrode.

[0050] In the above embodiment, the first electrode 210 is composed of Al series metal, the second electrode 230 is composed of Ti / Ni / Ag metal or NiV / Ag, V (vanadium) / Ni / Ag, etc. including a Ti layer, a Ni layer, and an Ag layer, and the semiconductor layer 220 is composed of silicon carbide (SiC).

[0051] In one embodiment, the semiconductor dies 110 all include the same type of semiconductor devices. As another example, a portion of the semiconductor dies 110 are implemented as other types of semiconductor devices.

[0052] The semiconductor die 110 as described above is installed between the first heat dissipation substrate 130 and the second heat dissipation substrate 140 through the guide assembly 120. At this time, the first electrode 210 of the first semiconductor die 110a faces the second heat dissipation substrate 140 side, and the second electrode 230 faces the first heat dissipation substrate 130 side. In addition, the second semiconductor die 110b is configured such that its first electrode 210 faces the first heat dissipation substrate 130 side, and the second electrode 230 faces the second heat dissipation substrate 140 side.

[0053] Through the above arrangement, the first and second semiconductor dies 110 a and 110 b are connected in series to each other by electrically connecting the first electrode 210 of the first semiconductor die 110 a and the second electrode 230 of the second semiconductor die 110 b .

[0054] In another embodiment, each semiconductor die 110 is disposed between the first heat dissipation substrate 120 and the second heat dissipation substrate 130, so that the same electrodes are all oriented in the same direction. For example, the first electrodes 210 of the first semiconductor die 110a and the second semiconductor die 110b are all oriented toward the second heat dissipation substrate 140, and the second electrodes 230 of the first semiconductor die 110a and the second semiconductor die 110b are all oriented toward the first heat dissipation substrate 130. As another example, the first electrodes 210 of the first semiconductor die 110a and the second semiconductor die 110b are all oriented toward the first heat dissipation substrate 130, and the second electrodes 230 of the first semiconductor die 110a and the second semiconductor die 110b are all oriented toward the second heat dissipation substrate 140.

[0055] Although in Figure 1 The semiconductor module 100 shown in the figure includes two semiconductor bare chips 110a-110b, but this is only an example, and the number of semiconductor bare chips 110 can be varied according to the type of application using the semiconductor module 100. As an example, the semiconductor module 100 includes eight semiconductor bare chips 110, and in this case, the eight semiconductor bare chips 110 are arranged in a 4*2 matrix form.

[0056] The semiconductor die 110 is mounted on the guide assembly 120. Figure 3 The structure of the guide assembly 120 according to the present invention will be described in more detail. Figure 3 (a) is a cross-sectional view of a guide assembly according to an embodiment of the present invention, Figure 3 (b) is a top view of a guide assembly according to an embodiment of the present invention.

[0057] like Figure 1 and Figure 3 As shown, the guide assembly 120 includes a base plate 122 and a guide stack 124 .

[0058] The substrate 122 supports the guide stack 124. The guide stack 124 is formed on the first surface 122a of the substrate 122. The second surface 122b of the substrate 122 is bonded to the first heat dissipation substrate 130 through the first bonding member 150. The semiconductor die 110 is mounted on the area of ​​the substrate 122 exposed by the opening area 126 formed in the guide stack 124.

[0059] In one embodiment, the substrate 122 may be formed of a copper-based material, and a circuit wiring with a predetermined pattern is patterned on the substrate 122 .

[0060] The first bonding member 150 bonds the substrate 122 and the first heat dissipation substrate 130. In one embodiment, the first bonding member 150 is made of a conductive material, such as a Sn-Ag series or Ag series material.

[0061] The guide stack 124 is formed on the first surface 122a of the substrate 122 and is patterned with opening regions 126 for mounting the semiconductor die 110. In one embodiment, the number of the opening regions 126 formed in the guide stack 124 is the same as the number of the semiconductor die 110 included in the semiconductor module 100. For example, when the semiconductor module 100 includes six semiconductor die, Figure 3 As shown in (b), six opening regions 126 are formed in the guide stack 124 in order to mount six semiconductor bare chips.

[0062] In the substrate 122, a second bonding member 160 is formed in an area exposed by the opening area 126 of the guide stack 124. In the opening area 126, the semiconductor die 110 is bonded to the first surface 122a of the substrate 122 through the second bonding member 160. The second bonding member 160 may also be formed of a conductive material like the first bonding member 150. As an example, the second bonding member 160 is composed of a Sn-Ag series or Ag series material.

[0063] In one embodiment, the guide stack 124 is formed of epoxy mold compound (EMC) or fiber glass. When the guide stack 124 is formed of EMC, the guide stack 124 is formed on the substrate 122 by a molding process using a mold. When the guide stack 124 is formed of fiber glass, the guide stack 124 is formed on the substrate 122 by a screen printing process.

[0064] In addition, although not shown, the guide stack 124 may also be formed with an open region (not shown) for exposing a lead frame terminal for electrically connecting the semiconductor die 110 to an external device.

[0065] As described above, according to the present invention, it is only necessary to combine the guide component 120 with the first heat dissipation substrate 130 and then install multiple semiconductor bare chips 110 in the opening area 126 of the guide component 120. Therefore, not only the alignment of the semiconductor bare chips 110 becomes easy, but also the semiconductor module manufacturing process is easy to control.

[0066] Also, according to the present invention, since a plurality of semiconductor bare dies are mounted on one guide member, flatness is improved when combined with the first heat dissipation substrate and the second heat dissipation substrate, and thus productivity is improved.

[0067] Furthermore, according to the present invention, a plurality of semiconductor dies are mounted in the opening region formed on the guide stack, thereby preventing the semiconductor dies from being damaged during the high-temperature pressure sintering process.

[0068] Refer again Figure 1 The first heat dissipation substrate 130 releases the heat generated by the semiconductor die 110 to the outside of the first heat dissipation substrate 130 .

[0069] The first heat dissipation substrate 130 includes a first substrate 132 , a first metal wiring layer 134 , and a first heat dissipation metal layer 136 .

[0070] The first substrate 132 electrically insulates the first metal wiring layer 134 from the first heat dissipation metal layer 136. The first substrate 132 includes a ceramic material having high thermal conductivity.

[0071] The first metal wiring layer 134 is formed on the first surface 132a of the first substrate 132 that is disposed opposite to the second heat dissipation substrate 140. Pre-set circuit wiring is patterned on the first metal wiring layer 134. In one embodiment, the first metal wiring layer 134 has circuit wiring with the same pattern as the circuit wiring formed on the substrate 122 of the guide assembly 120.

[0072] At this time, the first metal wiring layer 134 is bonded to the second surface 122 b of the substrate 122 included in the guide assembly 120 through the first adhesive member 150 .

[0073] One surface of the first heat dissipation metal layer 136 is bonded to the second surface 132 b of the first substrate 132 , and heat is dissipated through the other surface. A heat dissipation unit containing a cooling medium is disposed near the other surface of the first heat dissipation metal layer 136 .

[0074] The second heat dissipation substrate 140 releases heat generated from the semiconductor die 110 to the outside of the second heat dissipation substrate 140 .

[0075] The second heat dissipation substrate 140 includes a second substrate 142 , a second metal wiring layer 144 , and a second heat dissipation metal layer 146 .

[0076] The second substrate 142 electrically insulates the second metal wiring layer 144 from the second heat dissipation metal layer 146. The second substrate 142 includes a ceramic material having high thermal conductivity.

[0077] The second metal wiring layer 144 is formed on the first surface 142a of the second substrate 142 that is disposed opposite to the first heat dissipation substrate 130. A predetermined circuit wiring is patterned on the second metal wiring layer 144. The second metal wiring layer 144 is bonded to the semiconductor die 110 and the guide stack 124 through the third bonding member 170. In one embodiment, the third bonding member 170 is formed of a conductive material. As an example, the third bonding member 170 is composed of a Sn-Ag series or Ag series material.

[0078] One side of the second heat dissipation metal layer 146 is bonded to the second side 142 b of the second substrate 142 , and the second heat dissipation metal layer 146 dissipates heat through the other side. A heat dissipation unit containing a cooling medium is disposed near the other side of the second heat dissipation metal layer 146 .

[0079] In the above embodiment, the first metal wiring layer 134 and the second metal wiring layer 144 and the first heat dissipation metal layer 136 and the second heat dissipation metal layer 146 are formed of copper-based metal. In the above embodiment, the first heat dissipation substrate 130 and the second heat dissipation substrate 140 are formed by one of the DBC (Direct Bonded Copper) method, the AMB (Active Material Brazing) method and the DPC (Direct Plating Copper) method.

[0080] In one embodiment, the space between the first heat dissipation substrate 130 and the second heat dissipation substrate 140 is filled with a molding member 180. The molding member 180 may be an EMC. The molding member 180 may perform the functions of increasing the insulation distance between the first heat dissipation substrate 130 and the second heat dissipation substrate 140, protecting the semiconductor die 110 from oxides, and fixing the semiconductor die 110.

[0081] Figure 4 FIG. 2 is a schematic diagram schematically showing the structure of a semiconductor module having a double-sided heat dissipation structure according to a second embodiment of the present invention. Figure 4 As shown, a semiconductor module 400 with a double-sided heat dissipation structure according to a second embodiment of the present invention includes a semiconductor die 110 , a guide stack 420 , a first heat dissipation substrate 130 and a second heat dissipation substrate 140 .

[0082] Figure 4 The semiconductor module 400 according to the second embodiment is shown in FIG. Figure 1 Compared with the semiconductor module 400 according to the first embodiment shown in FIG. 1 , the only difference is that the guide stack 420 is not formed on the substrate 122, but is directly formed on the first metal wiring layer 134 of the first heat dissipation substrate 130. Therefore, for ease of description, only the difference caused by the formation of the guide stack 420 on the first metal wiring layer 134 will be described.

[0083] The semiconductor module 400 according to the second embodiment does not include the substrate 122, and therefore, the guide stack 420 is directly formed on the first metal wiring layer 134 of the first heat dissipation substrate 130, and the semiconductor bare chip 110 is bonded to the first metal wiring layer 134 through the second bonding member 460, which is formed in the area exposed by the opening area in the first metal wiring layer 134.

[0084] In one embodiment, the guide stack 420 is formed of EMC or glass fiber. When the guide stack 420 is formed of EMC, the guide stack 420 is formed on the first metal wiring layer 134 by a molding process using a mold. When the guide stack 420 is formed of glass fiber, the guide stack 420 is formed on the first metal wiring layer 134 by a screen printing process.

[0085] Figure 5 Is adopted Figure 1 and Figure 4 The schematic circuit diagram of the power device of the semiconductor module with double-sided heat dissipation structure shown in FIG. Figure 5 As shown, the electric power device 500 includes an inverter 510 and a motor 520 .

[0086] The inverter 510 supplies AC power to the motor 520. After the inverter 510 receives direct current (DC) power from a battery or a fuel cell and converts it into AC power, it outputs the converted AC power to the motor 520. Figure 5 As shown, the inverter 510 includes six semiconductor dies 610a-610f. Figure 1 and Figure 4 The semiconductor module 100 , 400 shown includes six semiconductor dies, so that the semiconductor module 100 , 400 according to the present invention performs the function of the inverter 510 of the power device 500 .

[0087] The motor 520 provides power to an electric vehicle, a fuel cell vehicle, etc. The motor 520 receives three-phase alternating current (AC) power to be driven.

[0088] Below, refer to 6A to 6F as well as 7A to 7E A method for manufacturing a semiconductor module with a double-sided heat dissipation structure according to the present invention will be described.

[0089] 6A to 6F 1 is a schematic cross-sectional view showing a method for manufacturing a semiconductor module having a double-sided heat dissipation structure according to a first embodiment of the present invention.

[0090] First, if Fig. 6A As shown, a guide stack 124 having an opening area 126 for mounting the semiconductor die 110 is formed on a substrate 122 , thereby manufacturing the guide assembly 120 .

[0091] In one embodiment, the guide stack 124 is formed of EMC (Epoxy Mold Compound). In the above embodiment, the guide stack 124 can be formed on the substrate 122 by a molding process. Specifically, after the substrate 122 is placed in a cavity of a mold (not shown) having a pattern for forming the opening area 126, the guide stack 124 is formed on the substrate 122 by injecting EMC into the cavity.

[0092] In another embodiment, the guide pile 124 is formed of fiber glass. In the above embodiment, the guide pile 124 is formed on the substrate 122 by screen printing. Specifically, a screen (not shown) having a pattern for forming the opening area 126 is arranged on the substrate 122, and a paste containing fiber glass is applied on the screen. Then, a scraper is moved on the screen to print the paste on the substrate 122, thereby forming the guide pile 124.

[0093] In one embodiment, the number of opening regions 126 formed in the guide stack 124 is the same as the number of semiconductor dies 110 included in the semiconductor module 100. For example, when the semiconductor module 100 includes six semiconductor dies, the guide stack 124 is formed with six opening regions 126 for mounting the six semiconductor dies.

[0094] In the above embodiment, the substrate 122 is formed of a copper-based material, and a circuit wiring having a predetermined pattern is patterned on the substrate 122 .

[0095] In addition, although not shown, an opening region (not shown) is formed in the guide stack 124 , and the opening region is used to expose a lead frame terminal for electrically connecting the semiconductor die 110 to an external device.

[0096] Then, if Figure 6B As shown, the bottom surface of the substrate 122 is bonded to the first heat dissipation substrate 130 by using the first bonding member 150. The first heat dissipation substrate 130 includes the first substrate 132, the first metal wiring layer 134 and the first heat dissipation metal layer 136, and the bottom surface of the substrate 122 is bonded to the first metal wiring layer 134 by the first bonding member 150. In one embodiment, the first bonding member 150 is made of a conductive material, such as a Sn-Ag series or Ag series material.

[0097] Then, if Figure 6C As shown, after forming the second bonding member 160 in the area exposed by the opening area 126 in the substrate 122, as shown in FIG. Fig.6D As shown, the semiconductor die 110 is mounted in the opening region 126. In one embodiment, the second bonding member 160 is formed of a conductive material like the first bonding member 150. As an example, the second bonding member 160 is made of a Sn-Ag series or Ag series material.

[0098] The semiconductor die 110 includes an electric semiconductor device such as a GTO, an IGBT, or a MOSFET, or includes a semiconductor device such as a diode.

[0099] In one embodiment, when the semiconductor die 110 is mounted, the first semiconductor die 110a and the second semiconductor die 110b of the plurality of semiconductor die 110 may be mounted so that the electrode arrangement directions are opposite to each other. For example, the first semiconductor die 110a is configured such that its first electrode faces the second heat dissipation substrate 140 side and the second electrode faces the first heat dissipation substrate 130 side, and the second semiconductor die 110b is configured such that its first electrode faces the first heat dissipation substrate 130 side and the second electrode faces the second heat dissipation substrate 140 side. At this time, the first electrode includes a gate electrode and a source electrode, and the second electrode includes a drain electrode.

[0100] Through such an arrangement, the first electrode 210 of the first semiconductor die 110 a and the second electrode 230 of the second semiconductor die 110 b are electrically connected, thereby connecting the first semiconductor die 110 a and the second semiconductor die 110 b in series with each other.

[0101] In another embodiment, the semiconductor dies 110 may have the same electrodes facing the same direction.

[0102] Then, if Fig. 6E As shown, the second heat dissipation substrate 140 is bonded to the semiconductor die 110 and the guide stack 124 by using the third bonding member 170. The second heat dissipation substrate 140 includes a second substrate 142, a second metal wiring layer 144, and a second heat dissipation metal layer 146. The second metal wiring layer 144 is bonded to the semiconductor die 110 and the guide stack 124 by the third bonding member 170. At this time, a predetermined circuit wiring is patterned on the second metal wiring layer 144.

[0103] In the above embodiment, the first metal wiring layer 134 and the second metal wiring layer 134 and the first heat dissipation metal layer 136 and the second heat dissipation metal layer 146 are made of copper series metal. In the above embodiment, the first heat dissipation substrate 130 and the second heat dissipation substrate 140 are formed by one of the direct bonded copper (DBC) method, the active material brazing (AMB) method and the direct plating copper (DPC) method.

[0104] Afterwards, if Fig. 6F As shown, a molding member 180 is injected into the space between the first heat dissipation substrate 130 and the second heat dissipation substrate 140. The molding member 180 is an EMC. The molding member 180 can perform the functions of increasing the insulation distance between the first heat dissipation substrate 130 and the second heat dissipation substrate 140, protecting the semiconductor die 110 from the influence of oxide, and fixing the semiconductor die 110.

[0105] As described above, according to the present invention, it is only necessary to combine the guide component 120 with the first heat dissipation substrate 130 and then install a plurality of semiconductor bare chips 110 in the opening area 126 of the guide component 120. Therefore, not only the alignment of the semiconductor bare chips 110 is easier, but also the process control during the manufacture of the semiconductor module is easier.

[0106] 7A to 7E 1 is a schematic cross-sectional view showing a method for manufacturing a semiconductor module having a double-sided heat dissipation structure according to a second embodiment of the present invention.

[0107] First, if Fig. 7AAs shown, a guide stack 420 having an opening area 126 for mounting semiconductor dies 110 a - 110 b is formed on the first heat dissipation substrate 130 .

[0108] In one embodiment, the guide stack 420 is formed of EMC. In the embodiment, the guide stack 420 is formed on the first heat dissipation substrate 130 by a molding process. Specifically, after the first heat dissipation substrate 130 is placed in a cavity of a mold (not shown) having a pattern for forming the opening area 126, EMC is injected into the cavity to form the guide stack 420 on the first heat dissipation substrate 130.

[0109] In another embodiment, the guide pile 420 is formed of glass fiber. In the embodiment, the guide pile 420 is formed on the first heat dissipation substrate 130 by screen printing. Specifically, a screen having a pattern for forming the opening area 126 is arranged on the first heat dissipation substrate 130, and after a paste containing glass fiber is coated on the screen, a scraper is moved on the screen to print the paste on the first heat dissipation substrate 130, thereby forming the guide pile 420.

[0110] Then, if Figure 7B As shown, after forming the second bonding member 460 on the first heat dissipation substrate 130 corresponding to the opening area 126, as shown in FIG. Figure 7C As shown, the semiconductor die 110 is mounted in the opening area 126. Since the semiconductor die 110 is mounted on the first heat dissipation substrate 130 by the second bonding member 460, Figure 7B and Figure 7C The process shown is similar to Figure 6C The processes shown in the figure are the same, so the detailed description is omitted.

[0111] Then, if Fig.7D As shown, the second heat dissipation substrate 140 is bonded to the semiconductor die 110 and the guide stack 420 by using the third bonding member 170. Fig. 7E As shown, the molding member 180 is injected into the space between the first heat dissipation substrate 130 and the second heat dissipation substrate 140. Fig.7D and Fig. 7E The process shown is similar to Fig. 6E and Fig. 6F The processes shown in the figure are the same, so the detailed description is omitted.

[0112] It is understood by those skilled in the art that the present invention can be implemented in other specific forms without changing the technical concept or essential technical features of the present invention.

[0113] Therefore, the embodiments described above should be understood as illustrative rather than restrictive in their entirety. The protection scope of the present invention is limited by the appended claims, rather than the specific embodiments, and all changes or modifications derived from the meaning and scope of the claims and their equivalent concepts should be understood to fall within the scope of the present invention to be protected.

Claims

1. A semiconductor module with a double-sided heat dissipation structure, wherein: include: The first heat dissipation substrate and the second heat dissipation substrate are arranged facing each other; a guide stack, which is disposed between the first heat dissipation substrate and the second heat dissipation substrate and is patterned to form an opening area for mounting a semiconductor die; and A semiconductor die is mounted in the opening area.

2. The semiconductor module with a double-sided heat dissipation structure according to claim 1, wherein: Also includes: A substrate, a first surface of which is formed with the guide stack, and a second surface opposite to the first surface is bonded to the first heat dissipation substrate; as well as, A first bonding member bonds the second surface of the substrate to the first heat dissipation substrate.

3. The semiconductor module with a double-sided heat dissipation structure according to claim 2, wherein: Also includes: A second bonding member is formed in a region of the first surface of the substrate that is exposed by the opening region, and bonds the semiconductor die to the first surface of the substrate.

4. The semiconductor module with a double-sided heat dissipation structure according to claim 2, wherein: The first heat dissipation substrate includes a first metal wiring layer, which is bonded to the substrate via the first bonding member and has circuit wiring of a predetermined shape formed in a pattern. The substrate has the same pattern as the circuit wiring pattern of the first metal wiring layer.

5. The semiconductor module with a double-sided heat dissipation structure according to claim 1, wherein: The first heat dissipation substrate comprises: a first substrate; A first metal wiring layer formed on a first surface of the first substrate; and a first heat dissipation metal layer formed on the second surface of the first substrate, The guide stack is combined on the first metal wiring layer.

6. The semiconductor module with a double-sided heat dissipation structure according to claim 5, wherein: Also includes: A second bonding member is formed in a region of the first metal wiring layer exposed by the opening region, bonding the semiconductor die to the first metal wiring layer.

7. A method for manufacturing a semiconductor module having a double-sided heat dissipation structure, wherein: include: The step of forming a guide stack having an opening area for mounting a semiconductor die on a substrate to thereby manufacture a guide assembly; The step of bonding the second surface of the substrate to a first heat dissipation substrate; The step of mounting the semiconductor die in an area corresponding to the opening area in the first surface of the substrate; as well as The step of combining a second heat dissipation substrate on the semiconductor die and the guide stack.

8. The method for manufacturing a semiconductor module with a double-sided heat dissipation structure according to claim 7, wherein: The steps of manufacturing the guide assembly include: The step of placing the substrate in a cavity of a mold having a pattern for forming the opening area; and The step of forming the guide stack on the substrate by injecting epoxy molding compound into the cavity.

9. A method for manufacturing a semiconductor module having a double-sided heat dissipation structure, wherein: include: The step of forming a guide stack having an opening area for mounting a semiconductor bare chip on a first heat dissipation substrate; The step of mounting the semiconductor bare chip in the area of ​​the first heat dissipation substrate exposed by the opening area; as well as The step of bonding a second heat dissipation substrate to the semiconductor die and the guide stack.

10. The method for manufacturing a semiconductor module with a double-sided heat dissipation structure according to claim 9, wherein: Also includes: A step of injecting a molding member into a space between the first heat dissipation substrate and the second heat dissipation substrate.

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