Semiconductor wafer cutting equipment and method thereof

Abstract

The invention discloses semiconductor wafer cutting equipment and a method thereof, and relates to the technical field of wafer cutting, the semiconductor wafer cutting equipment comprises a protective shell, a crystal bar supporting assembly and a cutting assembly are arranged in the protective shell, the crystal bar supporting assembly is located above the cutting assembly, and the cutting assembly is located above the crystal bar supporting assembly. A cutting liquid supply device is further arranged in the protective shell, the cutting liquid supply device is used for supplying liquid to the cutting part of the crystal bar, the cutting liquid supply device is installed between the crystal bar supporting assembly and the cutting assembly, a diamond curing mechanism is arranged on the cutting assembly, and the diamond curing mechanism is used for curing the diamond. The diamond curing mechanism is used for supplementing diamond particles to the diamond steel wire and curing the diamond particles, and the diamond particle slurry is filled with a material which is rapidly cured after being irradiated by ultraviolet light, so that the diamond particle slurry can be rapidly cured after being irradiated by the light curing lamp, and the diamond particles are prevented from being washed away by cutting liquid as much as possible.

Description

Technical Field

[0001] The present invention relates to the technical field of wafer cutting, and in particular to a semiconductor wafer cutting device and a method thereof. Background Art

[0002] In the field of semiconductor manufacturing, wafer cutting is a key process step, the purpose of which is to cut large-sized crystal rods into thin wafers for subsequent processing and manufacturing. With the development of semiconductor materials, especially the widespread application of hard materials such as silicon carbide (SiC), traditional cutting technology faces increasing challenges. The Mohs hardness of SiC material is as high as 9.2, close to the hardness of diamond, which makes it difficult for traditional cutting tools and methods to complete the cutting task efficiently and accurately.

[0003] At present, diamond wire cutting technology is one of the main methods for cutting high-hardness materials. Diamond wire is made by embedding diamond particles on steel wire and cutting the crystal rod using high-speed reciprocating motion. However, in actual operation, diamond particles are easy to fall off during high-speed cutting, resulting in changes in the cutting ability and diameter of the cutting wire, which in turn affects the cutting quality, such as the flatness, curvature and warpage of the wafer. In addition, the heat generated during the cutting process will also have an adverse effect on the cutting quality and equipment life. Summary of the invention

[0004] The present invention provides a semiconductor wafer cutting device and a method thereof, aiming to solve the problems mentioned in the above-mentioned prior art.

[0005] To achieve the above object, the present invention provides the following technical solutions: A semiconductor wafer cutting device comprises a protective shell, wherein a crystal rod supporting assembly and a cutting assembly are arranged inside the protective shell, wherein the crystal rod supporting assembly is located above the cutting assembly, wherein a cutting liquid supply device is also arranged inside the protective shell, wherein the cutting liquid supply device is used to supply liquid to a crystal rod cutting portion, wherein the cutting liquid supply device is installed between the crystal rod supporting assembly and the cutting assembly, wherein a diamond curing mechanism is arranged on the cutting assembly, wherein the diamond curing mechanism is used to supplement diamond particles onto a diamond steel wire and to curing the diamond particles.

[0006] As an optional solution of the semiconductor wafer cutting device of the present invention, the crystal rod support assembly includes a lifting assembly installed at the top of the protective shell, the lifting assembly is used to control the lifting of the crystal rod support assembly, the crystal rod support assembly also includes a mounting seat, a mounting groove is provided in the upper middle part of the mounting seat, and four groups of guide pillars are slidably provided around the mounting seat, and the upper ends of the four groups of guide pillars are installed at the top of the protective shell; The lifting assembly includes a hydraulic cylinder mounted on the top of the protective housing, and the lower telescopic end of the hydraulic cylinder is mounted in a mounting groove above the mounting seat; A limiting slide groove is provided below the mounting seat, a dovetail seat is slidably provided in the limiting slide groove, the dovetail seat comprises a metal seat provided in a T shape, the metal seat is limitedly slidably installed in the limiting slide groove, both sides of the metal seat are limited by limiting blocks, a fixing groove for fixing the crystal rod is provided below the metal seat, a threaded screw is threadedly connected to the side surface of the metal seat, one end of the threaded screw is connected to a clamping block, and a rotating handle is provided at the other end of the threaded screw.

[0007] As an optional solution of the semiconductor wafer cutting equipment described in the present invention, the cutting assembly includes two groups of rollers arranged in parallel, and wire grooves are evenly opened on the rollers. A take-up wheel and a pay-off wheel are arranged on both sides of the rollers, and the take-up wheel, the pay-off wheel and the wire grooves of the rollers are wound with diamond wire.

[0008] As an optional solution of the semiconductor wafer cutting equipment described in the present invention, the cutting liquid supply device includes a liquid supply box, the outlet end of the liquid supply box is connected to a liquid supply pipe, the other end of the liquid supply pipe is connected to a liquid supply tray, and a liquid outlet is opened on the side of the liquid supply tray, and the liquid outlet supplies liquid toward the contact surface between the diamond wire and the crystal rod.

[0009] As an optional solution of the semiconductor wafer cutting equipment described in the present invention, the diamond curing mechanism includes a rectangular box body coated on the outside of the upper diamond wire, the rectangular box body includes a loading area and a curing area, the rectangular box body is evenly provided with threading holes on the side of the loading area, the threading holes are inclined holes, and the hole spacing of the threading holes at one end close to the crystal rod is greater than the hole spacing at the other end, the loading area is provided with a storage bin above the threading holes, the storage bin is filled with diamond particle slurry, a feeding channel is provided between the storage bin and the threading holes, and a circle of the curing area is installed with a light curing lamp, and the light curing lamp is used to cure the diamond particle slurry on the diamond wire.

[0010] As an optional solution of the semiconductor wafer cutting equipment described in the present invention, a downward pressure control mechanism is arranged in the feed channel, and the downward pressure control mechanism includes a plug tube slidably arranged in the feed channel, and a plug cap is connected to the top of the feed channel through a support rod, and the plug cap and the upper end of the plug tube match each other, and the lower end of the plug tube is connected to a feed ring, and the inner circle of the feed ring is provided with a circle of discharge holes, and the diamond wire passes through the feed ring.

[0011] As an optional solution of the semiconductor wafer cutting equipment described in the present invention, a scraper assembly is provided at one end of the threading hole, and the scraper assembly includes a fixed plate arranged in the threading hole, springs are connected to the two sides of the fixed plate, and the other end of the spring is connected to the upper and lower sides of the threading hole in the loading area, and a mounting hole is opened in the middle of the fixed plate, and a scraper is installed in the mounting hole, and the scraper is arranged below the diamond wire.

[0012] A cutting method for semiconductor wafer cutting equipment, the cutting process is as follows: a. Replace the roller with a groove pitch of 0.45mm-0.55mm on the cutting machine; b. Wind the 0.10mm-0.14mm diamond wire into the roller groove and adjust the tension to evenly distribute the tension on the steel wire mesh; c. Add the diamond slurry with a density of 0.8kg / m³-1.2kg / m³ into the cutting fluid supply device of the equipment and circulate it evenly; d. Put the 6-8 inch crystal ingot on the machine to be cut, stick the crystal ingot to the dovetail seat, put the crystal ingot facing downwards, on the dovetail seat, and put it into the cutting chamber of the equipment; e. Pass the diamond wire around the diamond curing mechanism; f. Set cutting parameters according to the cross-sectional area and length of the crystal rod, including the amount of wire used for a single piece, cutting time, mortar flow, mortar temperature, wire mesh tension, feed speed, feed position, wire mesh speed, etc.; g. Start cutting and monitor the mortar temperature, cutting flow and crystal rod wire bow during the cutting process; h. After cutting is completed, the cutting chamber descending device is slowly raised to lift the dovetail seat and the cut wafer off the wire mesh; i. Remove the cut wafers from the machine, remove the glue and collect the wafers. Pay attention to SiC cutting wafers and C / Si surface identification.

[0013] As an optional process solution of the semiconductor wafer cutting device of the present invention, the preparation process of the diamond particle slurry filled in the diamond curing mechanism is as follows: Step 1: Take the required amount of prepolymer, active diluent and photoinitiator in proportion and pour them into a mixing barrel, then stir them thoroughly; Step 2: Take the required diamond particles and add them into the mixing barrel, and fully mix them into the prepolymer, active diluent and photoinitiator; Step 3: Stir and mix thoroughly for 36 hours to ensure that the diamond particles are evenly dispersed in the prepolymer, reactive diluent and photoinitiator to ensure the subsequent cutting quality; Step 4: Pour the mixed diamond particle slurry into the storage bin to add diamond particles to the diamond wire.

[0014] Technical effects and advantages of the present invention: 1. By setting a diamond curing mechanism on the cutting component, diamond particles can be added to the diamond wire in real time, and the added diamond particles can be quickly cured. Specifically, the diamond curing mechanism includes a feeding area and a curing area. The feeding area evenly coats the diamond particle slurry on the diamond wire through the feeding channel, and the curing area quickly cures the slurry through a light curing lamp. This design effectively solves the problem of diamond particles easily falling off during high-speed cutting, ensuring that the cutting ability of the diamond wire at the input and output ends is consistent, thereby significantly improving the cutting stability. At the same time, the cured diamond particles are firmly attached to the diamond wire, reducing the steel wire diameter deviation caused by particle shedding, further improving the flatness, curvature and warping of the wafer after cutting, and meeting the requirements of high-precision cutting.

[0015] 2. In the cutting process of this case, diamond particles were embedded in the steel wire after nickel plating, and the wire reel and roller were rotated at high speed to drive the steel wire to reciprocate and cut at high speed to cut the crystal rod into slices. However, the Mohs hardness of SiC material is 0.04, and the Mohs hardness of diamond is 0.03. During the high-speed cutting process of the diamond wire, the diamond particles embedded in the steel wire are very easy to fall off, resulting in deviations in the cutting ability and diameter of the diamond wire at the inlet and outlet ends, and it is difficult to control the flatness, curvature and warping of the product. During the process of cutting the crystal rod, the contact position between the crystal rod and the diamond wire will be pressed, making the two sides of the diamond wire inclined. In addition, during the process of cutting the crystal rod, the diamond wire embedded in the steel wire will be pressed, making the two sides of the diamond wire inclined. The diamond particles on the wire will fall off, which will affect the subsequent cutting. In the present application, the diamond wire passes through the threading hole of the rectangular box body. Since the threading hole is inclined, it is convenient for the diamond wire to pass through. Diamond particle slurry is stored in the storage bin. The diamond particle slurry flows into the threading hole through the feed channel due to gravity. During the process of cutting the crystal rod, the diamond wire moves downward and presses the feed ring, which is connected to the insert tube, so that the insert tube can be driven to move downward. When the insert tube moves downward, the opening at the upper end of the insert tube falls off from the plug cap, so that the diamond particle slurry can flow into the insert tube and the feed ring. The feed ring can coat the diamond wire with the diamond particle slurry.

[0016] 3. In this case, after the diamond wire is coated with diamond particle slurry, since the diamond particle slurry is in a fluid state, the diamond particle slurry is easy to fall off the diamond wire when the diamond wire is cut with the crystal rod and flushed with the cutting fluid. Therefore, the diamond particle slurry needs to be quickly solidified to fix the diamond particle slurry on the diamond wire. The diamond particle slurry is filled with a material that solidifies quickly after being exposed to light. Therefore, the diamond particle slurry can be quickly solidified by being exposed to a light curing lamp to prevent the diamond particles from being washed away by the cutting fluid as much as possible.

[0017] 4. The cutting liquid supply device is installed between the crystal rod support assembly and the cutting assembly, and can directly supply liquid to the contact surface between the diamond wire and the crystal rod to achieve precise cooling. The crystal rod support assembly can stably fix the crystal rod and control its downward movement through the cooperation of the lifting assembly and the dovetail seat, ensuring that the contact position between the crystal rod and the diamond wire is always in the optimal cooling area during the cutting process. This structural design not only effectively reduces the high temperature generated by friction during the cutting process, avoids thermal damage to the material and overheating of the equipment, but also improves the cooling efficiency and reduces resource waste through the recycling of the cutting liquid. In addition, the uniform supply of cutting liquid further ensures the stability of the cutting process, extends the service life of the diamond wire, and reduces the equipment maintenance cost. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 It is a structural schematic diagram of the present invention; Figure 2 It is a schematic diagram of the local structure of the present invention; Figure 3 It is a schematic diagram of the structure of the crystal rod support assembly and the cutting assembly of the present invention; Figure 4 It is a front view of the crystal rod support assembly and the cutting assembly of the present invention; Figure 5 It is a schematic diagram of the structure of the liquid supply tray of the present invention; Figure 6 It is a schematic diagram of the structure of the diamond solidification mechanism of the present invention; Figure 7 It is a schematic diagram of the internal cross-sectional structure of a rectangular box body of the present invention; Figure 8 For the present invention Figure 7 The enlarged structural diagram at A in the middle; Fig. 9 It is a schematic diagram of the diamond wire structure of the present invention.

[0019] Description of the numbers in the figure: 1. Protective shell; 2. Crystal rod support assembly; 21. Mounting seat; 22. Mounting slot; 23. Guide column; 24. Limiting slide slot; 25. Dovetail seat; 251. Metal seat; 252. Limiting block; 253. Fixing slot; 254. Threaded screw; 255. Clamping block; 256. Rotating handle; 3. Cutting assembly; 31. Roller; 32. Wire slot; 33. Take-up wheel; 34. Pay-off wheel; 35. Diamond wire; 4. Cutting liquid supply device; 41. Liquid supply box; 42. Liquid supply pipe; 43. Liquid supply tray; 44. Liquid outlet; 5. Diamond curing mechanism; 51, rectangular box body; 511, loading area; 512, curing area; 513, threading hole; 514, storage bin; 515, feeding channel; 516, light curing lamp; 517, downward pressure control mechanism; 5171, insert tube; 5172, support rod; 5173, plug cap; 519, feeding ring; 5110, discharge hole; 5111, scraper assembly; 5112, fixing plate; 5113, spring; 5115, mounting hole; 5116, scraper; 6, lifting assembly; 61, hydraulic cylinder; 7, crystal rod. DETAILED DESCRIPTION

[0020] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0021] Example 1 Please see attached Figure 1 , Figure 2 , Figure 3 and Figure 4 A semiconductor wafer cutting device comprises a protective shell 1, wherein a crystal rod supporting assembly 2 and a cutting assembly 3 are arranged inside the protective shell 1, wherein the crystal rod supporting assembly 2 is located above the cutting assembly 3, and a cutting liquid supply device 4 is also arranged inside the protective shell 1, wherein the cutting liquid supply device 4 is used to supply liquid to the crystal rod cutting part, and the cutting liquid supply device 4 is installed between the crystal rod supporting assembly 2 and the cutting assembly 3, and a diamond curing mechanism 5 is arranged on the cutting assembly 3, wherein the diamond curing mechanism 5 is used to add diamond particles to the diamond steel wire and to curing the diamond particles.

[0022] The crystal rod support assembly 2 can fix the crystal rod and drive the crystal rod to move downward, so that the crystal rod contacts the cutting assembly 3, thereby cutting the crystal rod. In order to prevent the temperature of the cutting contact position from being too high during the cutting process, the cutting liquid supply device 4 is used to cool the cutting position; During the cutting process, diamond particles are embedded in steel wire after nickel coating. The wire retracting and unreeling wheels and rollers rotate at high speed, driving the steel wire to reciprocate and cut at high speed to cut the crystal rod into slices. However, the Mohs hardness of SiC material is 9.2, and the Mohs hardness of diamond is 10. During the high-speed cutting process of diamond wire 35, the diamond particles embedded in the steel wire are very easy to fall off, resulting in deviations in the cutting ability and steel wire diameter of the diamond wire 35 at the input and output ends, making it difficult to control the flatness, curvature and warping of the product.

[0023] The diamond solidification mechanism 5 can be used to add diamond particles to the diamond wire 35, and the added diamond particles can also be solidified on the diamond wire 35 to prevent them from falling off as much as possible, thereby greatly improving the stability of subsequent cutting and improving the flatness, curvature and warping of the product.

[0024] Example 2 Please see attached Figure 1-5 The crystal rod support assembly 2 includes a lifting assembly 6 installed at the top of the protective shell 1, and the lifting assembly 6 is used to control the lifting of the crystal rod support assembly 2. The crystal rod support assembly 2 also includes a mounting seat 21, and a mounting groove 22 is provided in the upper middle part of the mounting seat 21, and four groups of guide pillars 23 are slidably provided around the mounting seat 21, and the upper ends of the four groups of guide pillars 23 are installed at the top of the protective shell 1; The lifting assembly 6 includes a hydraulic cylinder 61 mounted on the top of the protective housing 1, and the lower telescopic end of the hydraulic cylinder 61 is mounted in the mounting groove 22 above the mounting seat 21; A limit slide groove 24 is provided below the mounting seat 21, and a dovetail seat 25 is slidably provided in the limit slide groove 24. The dovetail seat 25 includes a T-shaped metal seat 251, which is slidably installed in the limit slide groove 24. Both sides of the metal seat 251 are limited by limit blocks 252. A fixing groove 253 for fixing the crystal rod 7 is provided below the metal seat 251. A threaded screw 254 is threadedly connected to the side of the metal seat 251, one end of the threaded screw 254 is connected to a clamping block 255, and the other end of the threaded screw 254 is provided with a rotating handle 256.

[0025] The cutting assembly 3 includes two sets of rollers 31 arranged in parallel, and wire grooves 32 are evenly opened on the rollers 31. A wire take-up wheel 33 and a wire pay-off wheel 34 are arranged on both sides of the roller 31. The wire take-up wheel 33, the wire pay-off wheel 34 and the wire grooves 32 of the roller 31 are wound with diamond wire 35.

[0026] The cutting liquid supply device 4 includes a liquid supply box 41, the outlet end of the liquid supply box 41 is connected to a liquid supply pipe 42, a liquid supply pump is installed on the liquid supply pipe 42, the other end of the liquid supply pipe 42 is connected to a liquid supply tray 43, and a liquid outlet 44 is provided on the side of the liquid supply tray 43, and the liquid outlet 44 supplies liquid toward the contact surface between the diamond wire 35 and the crystal rod 7.

[0027] When in use, the crystal rod 7 is fixed in the fixing groove 253, and then the rotating handle 256 is turned to make the clamping block 255 clamp and fix the crystal rod 7 on the dovetail seat 25, and then the liquid supply pump is started so that the cutting liquid in the liquid supply box 41 can be cooled toward the position where the crystal rod 7 contacts the cutting component 3. After starting, the roller 31, the wire-paying wheel 34 and the wire-taking wheel 33 in the cutting component 3 respectively pay out and take up the wire, and the diamond wire 35 cuts the crystal rod 7 into sheets during high-speed operation.

[0028] Example 3 Please see attached Figure 6 , Figure 7 , Figure 8 and Fig. 9 The diamond curing mechanism 5 includes a rectangular box body 51 coated on the outer side of the upper diamond wire 35. Both sides of the rectangular box body 51 are fixed on the inner side wall of the protective shell 1. The rectangular box body 51 includes a feeding area 511 and a curing area 512. The rectangular box body 51 is evenly provided with threading holes 513 on the side of the feeding area 511. The threading holes 513 are inclined holes, and the hole spacing of one end of the threading holes 513 close to the crystal rod 7 is greater than the hole spacing of the other end. The feeding area 511 is located above the threading holes 513 and a storage bin 514 is provided. The storage bin 514 is filled with diamond particle slurry. A feeding channel is provided between the storage bin 514 and the threading holes 513. 515, a downward pressure control mechanism 517 is arranged in the feeding channel 515, and the downward pressure control mechanism 517 includes a plug tube 5171 slidably arranged in the feeding channel 515, a plug cap 5173 is connected to the upper end of the feeding channel 515 through a support rod 5172, the plug cap 5173 and the upper end of the plug tube 5171 match each other, the lower end of the plug tube 5171 is connected to a feeding ring 519, the inner circle of the feeding ring 519 is provided with a circle of discharge holes 5110, the diamond wire 35 passes through the feeding ring 519, and a circle of curing area 512 is installed with a light curing lamp 516, and the light curing lamp 516 is used to cure the diamond particle slurry on the diamond wire 35.

[0029] In the process of cutting the crystal rod 7, the position where the crystal rod 7 contacts the diamond wire 35 will be pressed, so that the two sides of the diamond wire 35 are set at an angle, and the diamond particles embedded in the steel wire 35 will fall off during the process of cutting the crystal rod 7, which will affect the subsequent cutting. In the present application, the diamond wire 35 passes through the threading hole 513 of the rectangular box body 51. Since the threading hole 513 is set at an angle, it is convenient for the diamond wire 35 to pass through. Diamond particle slurry is stored in the storage bin 514. The diamond particle slurry is fed into the storage bin 514 by the feeder due to gravity. The channel 515 flows into the threading hole 513. As the diamond wire 35 is cutting the crystal rod 7, the diamond wire 35 moves downward in an inclined manner, pressing the feed ring 519. The feed ring 519 is connected to the insert tube 5171, thereby driving the insert tube 5171 to move downward. When the insert tube 5171 moves downward, the opening at the upper end of the insert tube 5171 falls off from the plug cap 5173, so that the diamond particle slurry can flow into the insert tube 5171 and the feed ring 519. The feed ring 519 can coat the diamond wire 35 with the diamond particle slurry. After the cutting is completed, the diamond wire 35 is not suppressed by the crystal rod 7, so that the two sides of the diamond wire 35 move upward, and the diamond wire 35 can drive the feed ring 519 and the insert tube 5171 to move upward, so that the upper end of the insert tube 5171 blocks the plug cap 5173 to prevent the diamond particle slurry stored in the storage bin 514 from flowing out.

[0030] A scraper assembly 5111 is provided at one end of the threading hole 513, and the scraper assembly 5111 includes a fixed plate 5112 arranged in the threading hole 513, and springs 5113 are connected to both sides of the fixed plate 5112, and the other end of the spring 5113 is connected to the feeding area 511 located at the upper and lower sides of the threading hole 513, and a mounting hole 5115 is opened in the middle of the fixed plate 5112, and a scraper 5116 is installed in the mounting hole 5115, and the scraper 5116 is arranged below the diamond wire 35, and a collecting tank is arranged below the threading hole 513; The diamond wire 35 passes through the scraper 5116, which is an elastic steel sheet, and can scrape off the excess diamond particle slurry under the diamond wire 35, and then drop it into the collection tank below; After the diamond wire 35 is coated with the diamond particle slurry, since the diamond particle slurry is in a fluid state, the diamond particle slurry is easy to fall off the diamond wire 35 when the diamond wire 35 is cut with the crystal rod 7 and flushed with the cutting fluid. Therefore, the diamond particle slurry needs to be quickly solidified to fix the diamond particle slurry on the diamond wire 35. The diamond particle slurry is filled with a material that is quickly solidified after being exposed to light. Therefore, the diamond particle slurry can be quickly solidified by being irradiated by the light curing lamp 516 to prevent the diamond particles from being washed away by the cutting fluid as much as possible.

[0031] Example 4 A process for semiconductor wafer cutting equipment, the cutting process is as follows: a. Replace the roller 31 with a groove pitch of 0.45mm-0.55mm on the cutting machine; b. Wind the 0.10mm-0.14mm diamond wire 35 into the roller wire groove 32, and adjust the tension to evenly distribute the tension to the steel wire mesh; c. Add the diamond slurry with a density of 0.8kg / m³-1.2kg / m³ into the cutting liquid supply device 4 of the equipment and circulate it evenly; d. Put the 6-8 inch crystal ingot on the machine to be cut, stick the crystal ingot to the dovetail seat 25, and put the crystal ingot facing downward on the dovetail seat 25 into the cutting chamber of the equipment; e. Pass the diamond wire 35 around the diamond curing mechanism 5; f. Set cutting parameters according to the cross-sectional area and length of the crystal rod, including the amount of wire used for a single piece, cutting time, mortar flow, mortar temperature, wire mesh tension, feed speed, feed position, wire mesh speed, etc.; g. Start cutting and monitor the mortar temperature, cutting flow and crystal rod wire bow during the cutting process; h. After cutting is completed, the cutting chamber descending device is slowly raised to lift the dovetail seat 25 and the cut wafer off the wire mesh; i. Remove the cut wafers from the machine, remove the glue and collect the wafers. Pay attention to SiC cutting wafers and C / Si surface identification.

[0032] Example 5 The preparation process of diamond particle slurry is as follows: Step 1: Take the required amount of prepolymer, active diluent and photoinitiator in proportion and pour them into a mixing barrel, then stir them thoroughly; Step 2: Take the required diamond particles and add them into the mixing barrel, and fully mix them into the prepolymer, active diluent and photoinitiator; Step 3: Stir and mix thoroughly for 36 hours to ensure that the diamond particles are evenly dispersed in the prepolymer, reactive diluent and photoinitiator to ensure the subsequent cutting quality; Step 4: Pour the mixed diamond particle slurry into the storage bin 514 to replenish diamond particles to the diamond wire 35 .

[0033] The diamond particle slurry obtained above can be directly coated on the diamond wire 35, and through the irradiation of ultraviolet light, a rapid curing process can be achieved between 0.01s and 0.05s. In the cutting process of the diamond wire 35, the speed of the wire is generally 10-15m / s, so between 0.008s and 0.02s, and the distance of the diamond wire 35 is about 10cm. In this distance, the ultraviolet light can make the diamond particles adhere to the diamond wire 35, and it is not easy to fall off, which greatly improves the subsequent cutting quality.

[0034] It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device.

[0035] The above is only a preferred embodiment of the present invention. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the technical principles of the present invention. These improvements and modifications should also be regarded as the scope of protection of the present invention.

Claims

1. A semiconductor wafer cutting device, comprising a protective shell, wherein a crystal rod support assembly and a cutting assembly are arranged inside the protective shell, wherein the crystal rod support assembly is located above the cutting assembly, and wherein: A cutting liquid supply device is also provided in the protective shell, and the cutting liquid supply device is used to supply liquid to the cutting part of the crystal rod. The cutting liquid supply device is installed between the crystal rod support component and the cutting component, and the cutting component is provided with a diamond curing mechanism; The diamond curing mechanism comprises a rectangular box body coated on the outer side of the upper diamond wire, the rectangular box body comprises a feeding area and a curing area, the rectangular box body is evenly provided with threading holes on the side of the feeding area, the threading holes are inclined holes, and the hole spacing of one end of the threading hole close to the crystal rod is greater than the hole spacing of the other end, the feeding area is provided with a storage bin above the threading holes, the storage bin is filled with diamond particle slurry, a feeding channel is provided between the storage bin and the threading hole, and a circle of the curing area is installed with a light curing lamp, and the light curing lamp is used to perform a curing treatment on the diamond particle slurry on the diamond wire.

2. A semiconductor wafer cutting device according to claim 1, characterized in that: The crystal rod support assembly includes a lifting assembly installed at the top of the protective shell, and the lifting assembly is used to control the lifting of the crystal rod support assembly. The crystal rod support assembly also includes a mounting seat, a mounting groove is provided in the upper middle part of the mounting seat, and four groups of guide pillars are slidably provided around the mounting seat, and the upper ends of the four groups of guide pillars are installed at the top of the protective shell; The lifting assembly includes a hydraulic cylinder mounted on the top of the protective housing, and the lower telescopic end of the hydraulic cylinder is mounted in a mounting groove above the mounting seat; A limiting slide groove is provided below the mounting seat, a dovetail seat is slidably provided in the limiting slide groove, the dovetail seat comprises a metal seat provided in a T shape, the metal seat is limitedly slidably installed in the limiting slide groove, both sides of the metal seat are limited by limiting blocks, a fixing groove for fixing the crystal rod is provided below the metal seat, a threaded screw is threadedly connected to the side surface of the metal seat, one end of the threaded screw is connected to a clamping block, and a rotating handle is provided at the other end of the threaded screw.

3. The semiconductor wafer cutting device according to claim 1, characterized in that: The cutting assembly comprises two groups of rollers arranged in parallel, and wire grooves are evenly opened on the rollers. A wire take-up wheel and a wire pay-off wheel are arranged on both sides of the rollers, and the wire take-up wheel, the wire pay-off wheel and the wire grooves of the rollers are wound with diamond wires.

4. The semiconductor wafer cutting device according to claim 1, characterized in that: The cutting liquid supply device comprises a liquid supply box, the outlet end of the liquid supply box is connected to a liquid supply pipe, the other end of the liquid supply pipe is connected to a liquid supply tray, a liquid outlet is provided on the side of the liquid supply tray, and the liquid outlet supplies liquid toward the contact surface between the diamond wire and the crystal rod.

5. The semiconductor wafer cutting device according to claim 1, characterized in that: A downward pressure control mechanism is arranged in the feed channel, and the downward pressure control mechanism includes a plug tube slidably arranged in the feed channel, a plug cap is connected to the top of the feed channel through a support rod, the plug cap and the upper end of the plug tube match each other, the lower end of the plug tube is connected to a feed ring, the inner ring of the feed ring is provided with a circle of discharge holes, and the diamond wire passes through the feed ring.

6. The semiconductor wafer cutting device according to claim 5, characterized in that: A scraper assembly is provided at one end of the threading hole, and the scraper assembly includes a fixed plate arranged in the threading hole, springs are connected to the two sides of the fixed plate, and the other end of the spring is connected to the upper and lower sides of the threading hole in the feeding area. A mounting hole is opened in the middle of the fixed plate, and a scraper is installed in the mounting hole. The scraper is arranged below the diamond wire.

7. A method for cutting a semiconductor wafer using the semiconductor wafer cutting device according to any one of claims 1 to 6, characterized in that: The cutting process is as follows: a. Replace the roller with a groove pitch of 0.45mm-0.55mm on the cutting machine; b. Wind the 0.10mm-0.14mm diamond wire into the roller groove and adjust the tension to evenly distribute the tension on the steel wire mesh; c. Add the diamond slurry with a density of 0.8kg / m³-1.2kg / m³ into the cutting fluid supply device of the equipment and circulate it evenly; d. Put the 6-8 inch crystal ingot on the machine to be cut, stick the crystal ingot to the dovetail seat, put the crystal ingot facing downwards, on the dovetail seat, and put it into the cutting chamber of the equipment; e. Pass the diamond wire around the diamond curing mechanism; f. Set cutting parameters according to the cross-sectional area and length of the crystal rod, including the amount of wire used for a single piece, cutting time, mortar flow, mortar temperature, wire mesh tension, feed speed, feed position, wire mesh speed, etc.; g. Start cutting and monitor the mortar temperature, cutting flow and crystal rod wire bow during the cutting process; h. After cutting is completed, the cutting chamber descending device is slowly raised to lift the dovetail seat and the cut wafer off the wire mesh; i. Remove the cut wafers from the machine, remove the glue and collect the wafers. Pay attention to SiC cutting wafers and C / Si surface identification.

8. The cutting method of semiconductor wafer cutting equipment according to claim 7, characterized in that: The preparation process of the diamond particle slurry filled in the diamond curing mechanism is as follows: Step 1: Take the required amount of prepolymer, active diluent and photoinitiator in proportion and pour them into a mixing barrel, then stir them thoroughly; Step 2: Take the required diamond particles and add them into the mixing barrel, and fully mix them into the prepolymer, active diluent and photoinitiator; Step 3: Stir and mix thoroughly for 36 hours to ensure that the diamond particles are evenly dispersed in the prepolymer, reactive diluent and photoinitiator to ensure the subsequent cutting quality; Step 4: Pour the mixed diamond particle slurry into the storage bin to add diamond particles to the diamond wire.

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