Sagger for efficient siliconizing and preparation method of sagger

By adopting a split structure, the casing design and the fastening form and silicon carbide coating are used to solve the problem of damage caused by uneven stress in the existing carbon ceramic brake disc silicon seepage tooling, and the workpiece life is extended and the preparation cost is reduced.

CN119980130APending Publication Date: 2025-05-13SICHUAN HUIRUI CARBON BASED NEW MATERIAL TECH CO LTD
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Patent Information

Application Number
CN202510113024.6
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-01-24
Publication Date
2025-05-13

AI Technical Summary

Technical Problem

The existing carbon ceramic brake disc silicon seepage tooling is prone to damage due to uneven stress during the high-temperature silicon seepage process, and the production process is cumbersome, which increases the preparation cost.

Method used

A cassette design adopts a split structure, in which the cassette ring and the bottom plate are combined by snapping form, an annular flange and a radial gap are provided to accommodate the expansion or contraction deformation, and a silicon carbide coating is applied to the cassette ring and the inner wall of the base plate.

Benefits of technology

It effectively avoids damage caused by uneven stress, simplifies the production process of the tooling, reduces the preparation cost, and increases the life of the silhouette.

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Abstract

The invention relates to the technical field of thermal field parts for siliconing of carbon ceramic brake discs, and discloses a sagger for efficient siliconing and a preparation method thereof, a sagger ring and a bottom plate are buckled to form a split sagger structure for siliconing, an R angle generated by connection of a ring wall and a plate is avoided, and the sagger is prevented from being damaged. Therefore, the risk that a siliconizing sagger tool is damaged due to uneven tensile stress caused by different thicknesses of the sagger bottom plate and the sagger ring in the high-temperature siliconizing process is avoided; the split type sagger can be opened when the silicon material is cooled and expanded in a self-splicing mode, the radial gap formed between the annular flange and the sagger ring needs to contain the deformation difference value of the sagger ring and the bottom plate, it is guaranteed that large stress is not generated between the sagger ring and the sagger bottom plate before and after siliconizing, and therefore the integrity of the sagger is protected to a great extent, and the service life of the sagger is prolonged. The sagger is prevented from being damaged due to stress, and the service life of the sagger is prolonged; and in addition, a guarantee is provided for taking out the brake disc subsequently, and the risk of accidents in the siliconizing process is reduced.
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Description

Technical Field

[0001] The invention relates to the technical field of thermal field components for siliconizing a carbon-ceramic brake disc, and discloses a sagger for high-efficiency siliconizing and a preparation method thereof. Background Art

[0002] The industrial production of carbon ceramic brake discs requires the use of siliconization technology to siliconize brake discs made of carbon-carbon composite materials. During the production process, a certain amount of high-purity silicon needs to be added as the silicon source for the siliconization process. The tooling commonly used to hold silicon materials on the market is a graphite crucible. However, before using the graphite crucible for siliconization each time, it is necessary to apply anti-sticking material on the surface and lay graphite paper. The process is cumbersome, and the graphite crucible will fail as the silicon erodes.

[0003] Therefore, in the patent CN117756545A, a carbon-ceramic crucible for siliconizing carbon-ceramic brake discs and its preparation method, a new tooling is proposed to replace the graphite material tooling as a new carbon-ceramic brake disc siliconizing tooling. Some weaknesses of graphite products are avoided to a certain extent. However, the tooling still has some potential defects. For example, the tooling proposed in the patent is a woven carbon-carbon preform, which is made through several processes. The preform manufacturing process of the tooling proposed in the article is relatively cumbersome, and it is necessary to customize a wooden mold of a specific size and shape, and it is necessary to use a complex needling process, especially the variable thickness connection and variable angle needling process used at the rounded corners, which invisibly increases the preparation cost. In addition, due to the one-piece molded tooling, it is easy to have uneven density during the deposition process, resulting in internal stress distribution. During use, as the temperature rises and falls, the expansion and contraction between different densities of the saggers are different, thereby generating tensile stress. This repeated accumulation will cause cracking and damage if the stress is too large and exceeds the tolerance range. When the tooling is in the process of siliconizing and the silicon liquid melts, if there is an emergency and the power is cut off, causing the furnace to stop and cool down, the tooling will cool down and shrink, while the silicon liquid will cool down and expand. Under the condition of two-phase force, the tooling will be cracked by the gradually solidified and expanded silicon liquid, causing damage to the tooling.

[0004] In the study of sagger structure design, it was found that Figure 5 The bottom plate of the sagger structure formed by the combination of the traditional split sagger ring and the sagger bottom plate is in the form of a flat plate, the needling process is plane needling, and the carbon fiber cloth is laid in a two-dimensional plane 0° and 90° alternating layer. The sagger ring is a closed ring, and the carbon fiber preform will be added with circumferential reinforcing carbon fiber winding during the weaving process for three-dimensional circumferential needling, so that during the heat expansion of the sagger ring, the circumferential carbon fiber has a strong restraining effect on the expansion of the sagger ring, and the expansion generated is lower than that of the sagger bottom plate, and there is a difference in the expansion between the two. In addition, if the furnace is stopped during the siliconizing process, the silicone liquid in the sagger and the brake disc are not easy to separate. If the overall siliconizing tooling is used, it may be completely damaged and cannot be used.

[0005] In addition, if Figure 6 The figure shows a traditional integrated sagger structure with R angle (rounded corner), in which the R angle is set between the ring wall and the bottom plate, and the different thicknesses at the connection between the bottom plate and the sagger ring make the needling process at the R angle high, and different sizes of needles need to be used for needling at different angles, which increases the difficulty of production. The existence of the R angle increases the overall strength of the tooling to a certain extent, but it is easy to break under the influence of internal stress, which is contrary to the original design intention. Summary of the invention

[0006] The object of the present invention is to provide a sagger for efficient siliconizing and a preparation method thereof, which can prevent the sagger from being damaged due to stress and prolong the service life of the sagger.

[0007] In order to achieve the above technical effects, the technical solution adopted by the present invention is:

[0008] A sagger for efficient siliconizing comprises a sagger ring and a base plate, wherein the sagger ring is placed on the base plate to form a split-structure sagger structure; an annular flange protruding toward the upper surface of the base plate is provided on the base plate, the bottom surface of the sagger ring is coaxially fitted and installed with the annular flange, and a radial gap is provided between the annular flange and the sagger ring to accommodate the expansion or contraction deformation of the sagger ring.

[0009] Furthermore, the sagger ring includes a carbon-carbon sagger ring blank, and the bottom plate includes a carbon-carbon round plate blank; the carbon-carbon sagger ring blank and the carbon-carbon round plate blank are both prepared by alternately needling and stacking carbon fiber cloth and carbon fiber mesh to form a composite cloth structure.

[0010] Further, the radial clearance between the annular flange and the sagger ring is Wherein L is the radial clearance between the annular flange and the sagger ring; D is the inner diameter of the effective charging area of ​​the sagger structure, that is, the inner diameter of the sagger ring; T1 is the working temperature during siliconization, T0 is the ambient temperature, α1 is the average expansion coefficient of the bottom plate, α2 is the average expansion coefficient of the sagger ring, and h is the wall thickness of the sagger ring.

[0011] Furthermore, the carbon fiber cloth in the composite cloth structure accounts for 30% to 50% by weight, and the carbon fiber mesh accounts for 50% to 70% by weight; the composite cloth structure of the carbon-carbon sagger ring embryo and the carbon-carbon circular plate embryo is also subjected to carbon deposition and densification treatment by chemical vapor deposition, the gas used in the chemical vapor deposition is alkane gas, and the density of the carbon-carbon sagger ring embryo and the carbon-carbon circular plate embryo is 1.1 to 1.8 g / cm 3 between.

[0012] Furthermore, the inner wall of the sagger structure formed by the sagger ring and the bottom plate is also provided with a silicon carbide coating.

[0013] Furthermore, the raw material components of the silicon carbide coating include 60% to 70% silicon carbide, 3% to 5% carbon powder, 10% to 15% silicon powder, and 10% to 18% resin; after the raw material components are evenly mixed, they are cured at 200 to 300°C, and then sintered at a high temperature of 1500 to 1700°C to form the silicon carbide coating.

[0014] Furthermore, a notch is provided at the middle and upper part of the sagger ring, and the notch is used as an outlet for silicon vapor during silicon removal.

[0015] In order to achieve the above technical effects, the present invention also provides a method for preparing a sagger for efficient siliconizing, which is used to prepare the sagger for efficient siliconizing, comprising:

[0016] S1. Alternately needle-punch a carbon fiber cloth and a carbon fiber web to form a composite cloth, attach the composite cloth to a universal barrel-shaped mold, and continuously needle-punch to obtain a sagger ring preform; after continuously needle-punching the composite cloth into a flat plate, a flat plate preform is formed for preparing a sagger bottom plate;

[0017] S2, using a chemical vapor deposition process to perform carbon deposition and densification on the sagger ring preform and the flat plate preform to obtain two carbon-carbon embryos, a carbon-carbon sagger ring and a carbon-carbon base plate;

[0018] S3, subjecting the carbon-carbon embryo to high temperature treatment, wherein the high temperature treatment temperature is between 1800 and 2200° C.;

[0019] S4. According to the structural dimensions of the sagger ring and the bottom plate, the sagger ring preform after high temperature treatment is fine-processed to form a sagger ring structure, and the flat plate preform after high temperature treatment is fine-processed to form a bottom plate structure with an annular flange.

[0020] Further, the radial clearance between the annular flange and the sagger ring is Wherein L is the radial clearance between the annular flange and the sagger ring; D is the inner diameter of the effective charging area of ​​the sagger structure, that is, the inner diameter of the sagger ring; T1 is the working temperature during siliconization, T0 is the ambient temperature, α1 is the average expansion coefficient of the bottom plate, α2 is the average expansion coefficient of the sagger ring, and h is the wall thickness of the sagger ring.

[0021] Furthermore, the inner wall of the sagger structure formed by the sagger ring and the bottom plate is also provided with a silicon carbide coating; the raw material components of the silicon carbide coating include 60% to 70% silicon carbide, 3% to 5% carbon powder, 10% to 15% silicon powder, and 10% to 18% resin; after the raw material components are evenly mixed, they are cured at 200 to 300°C, and then sintered at a high temperature of 1500 to 1700°C to form the silicon carbide coating.

[0022] Compared with the prior art, the present invention has the following beneficial effects: the present invention forms a split-type siliconizing sagger structure by fastening the sagger ring and the bottom plate, thereby avoiding the R angle generated by the contact between the ring wall and the plate, thereby avoiding the risk of damaging the siliconizing sagger tooling due to uneven tensile stress caused by the different thicknesses of the sagger bottom plate and the sagger ring during high-temperature siliconizing; and the spliced ​​combination of the split sagger itself can be opened when the silicon material cools and expands, and the radial gap set between the annular flange and the sagger ring needs to be able to accommodate the difference in deformation of the sagger ring and the bottom plate, ensuring that no large force is generated between the sagger ring and the sagger bottom plate before and after siliconizing, thereby protecting the integrity of the sagger to a great extent, avoiding damage to the sagger due to stress, and improving the life of the sagger. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 This is a schematic diagram of the structure of a sagger for efficient siliconizing in Example 1 or 2;

[0024] Figure 2 It is a cross-sectional structural diagram of the sagger for efficient siliconizing in Example 1 or 2;

[0025] Figure 3 It is a cross-sectional structural diagram of the sagger for efficient siliconizing in Example 3;

[0026] Figure 4 It is a cross-sectional structural diagram of the sagger for efficient siliconizing in Example 4;

[0027] Figure 5 This is a schematic diagram of the installation of a traditional split sagger ring and sagger bottom plate;

[0028] Figure 6 This is a schematic diagram of the traditional integrated sagger structure with R angle;

[0029] Among them, 1. sagger ring; 101. first step; 2. bottom plate; 201. outer edge; 3. annular flange; 4. radial gap; 5. notch. DETAILED DESCRIPTION

[0030] The present invention is further described in detail below in conjunction with the embodiments and drawings. However, it should not be understood that the scope of the above subject matter of the present invention is limited to the following embodiments, and all technologies realized based on the content of the present invention belong to the scope of the present invention.

[0031] Example 1

[0032] See also Figure 1 , Figure 2 and Figure 6A sagger for efficient siliconizing comprises a sagger ring 1 and a base plate 2, wherein the sagger ring 1 is placed on the base plate 2 to form a split sagger structure; the base plate 2 is provided with an annular flange 3 protruding toward the upper surface of the base plate 2, the bottom surface of the sagger ring 1 is coaxially fitted and installed with the annular flange 3, and a radial gap 4 is provided between the annular flange 3 and the sagger ring 1 to accommodate the expansion or contraction deformation of the sagger ring 1.

[0033] In this embodiment, the sagger ring 1 and the bottom plate 2 are buckled to form a split siliconizing sagger structure, thereby avoiding the R angle (such as Figure 6 As shown in the figure, by removing the R angle and replacing it with a splicing structure, the risk of damaging the siliconizing sagger tooling due to uneven tensile stress caused by different thicknesses of the sagger bottom plate 2 and the sagger ring 1 during high-temperature siliconizing is avoided; and the split sagger itself can be opened when the silicon material cools and expands, and the radial gap 4 set between the annular flange 3 and the sagger ring 1 needs to be able to accommodate the difference in deformation of the sagger ring 1 and the bottom plate 2, ensuring that no large force is generated between the sagger ring 1 and the sagger bottom plate 2 before and after siliconizing, thereby protecting the integrity of the sagger to a great extent, avoiding damage to the sagger due to stress, and increasing the life of the sagger; and providing protection for the subsequent removal of the brake disc, reducing the risk of accidents during the siliconizing process. In addition, the split sagger has extremely strong interchangeability, and the component parts can be replaced in time, avoiding the problem of having to replace the entire tooling once damaged, and reducing the consumption of tooling.

[0034] Figure 1 The figure shows a type of sagger tooling for efficient siliconizing in this embodiment. The main body of the sagger tooling for efficient siliconizing includes two parts, namely a sagger ring 1 and a sagger bottom plate 2. The sagger bottom plate 2 has an annular flange 3 for buckling the bottom plate 2 and the sagger ring 1. Correspondingly, a corresponding first step 101 is provided at the bottom opening edge of the sagger ring 1. The buckling method is as follows: Figure 2 As shown; a radial gap 4 is provided between the outer wall of the annular flange 3 and the inner wall of the first step 101.

[0035] The top opening of the sagger ring 1 has circumferentially arranged notches 5, which are used as the outlet for silicon vapor during silicon removal. The sagger bottom plate 2 slightly exceeds the outer diameter of the sagger ring 1, forming a Figure 2 The outer edge 201 shown is used to assist the lifting and transportation of the sagger tooling. This embodiment is only one form of the sagger tooling for efficient siliconizing. The sagger tooling for efficient siliconizing in the present invention includes but is not limited to this form, and the protection scope of the present invention is not limited thereto.

[0036] Example 2

[0037] See also Figure 1 and Figure 2A sagger for efficient siliconizing comprises a sagger ring 1 and a base plate 2, wherein the sagger ring 1 is placed on the base plate 2 to form a split sagger structure; the base plate 2 is provided with an annular flange 3 protruding toward the upper surface of the base plate 2, the bottom surface of the sagger ring 1 is coaxially fitted and installed with the annular flange 3, and a radial gap 4 is provided between the annular flange 3 and the sagger ring 1 to accommodate the expansion or contraction deformation of the sagger ring 1.

[0038] The method for preparing a sagger for efficient siliconizing in this embodiment comprises the following steps:

[0039] S1. Alternately needle-punch the carbon fiber cloth and the carbon fiber mesh tire to form a composite cloth, attach the composite cloth to a universal barrel-shaped mold, and continuously needle-punch to obtain a sagger ring 1 preform. Use the same process to make a universal flat plate preform, and after needle-punching the flat plate, the sagger bottom plate 2 can be made. The inner diameter of the sagger ring 1 is between 300 and 500 mm, and the size of the sagger bottom plate 2 is selected according to the sagger ring 1. The thickness of the sagger ring 1 is between 8 and 20 mm, and the wall thickness of the sagger bottom plate 2 is about 5 to 15 mm.

[0040] In this embodiment, the carbon fiber cloth in the composite cloth structure accounts for 30% to 50% by mass, and the carbon fiber web accounts for 50% to 70% by mass.

[0041] S2, using chemical vapor deposition process to carbonize and densify the two sagger preforms to obtain carbon-carbon sagger ring 1 and carbon-carbon sagger bottom two carbon-carbon embryos, the gas used in chemical vapor deposition is alkane gas, the density of the carbon-carbon sagger ring 1 embryo and the carbon-carbon round plate embryo is 1.1-1.8g / cm 3 between.

[0042] The hydrocarbon gas used for vapor deposition to provide a carbon source includes at least one of methane, ethane, propylene, ethylene, acetylene and the like. In the vapor deposition carbonization process of this embodiment, the flow rate of the hydrocarbon gas introduced is 180-230 L / min, and the hydrocarbon gas that can be used is natural gas. Natural gas is selected mainly because it is easy to obtain, low in price, and suitable for industrial production.

[0043] S3. Performing high temperature treatment on the carbon-carbon embryo with density reaching the standard, wherein the high temperature treatment temperature is between 1800 and 2200° C., so as to facilitate subsequent processing.

[0044] S4, finishing the sagger ring 1 and the sagger bottom plate 2 according to their sizes, the product still consists of two parts after finishing, and can be assembled into a sagger;

[0045] In this embodiment, the sagger bottom plate 2 is in the form of a flat plate, the needling process is plane needling, and the carbon fiber cloth is laid in a two-dimensional plane with alternating layers of 0° and 90°; and the sagger ring 1 is a closed ring, and the carbon fiber preform will be added with circumferential reinforcing carbon fiber winding and three-dimensional circumferential needling during the weaving process, so that when the sagger ring 1 is heated and expanded, the circumferential carbon fiber has a strong restraining effect on the expansion of the sagger ring 1, and the expansion generated is lower than that of the sagger bottom plate 2, and there is a difference in the expansion between the two. Therefore, the radial gap 4 between the annular flange 3 and the sagger ring 1 in this embodiment is based on Wherein L is the radial gap 4 between the annular flange 3 and the sagger ring 1; D is the inner diameter of the effective area of ​​the sagger structure for charging, that is, the inner diameter of the sagger ring 1; T1 is the working temperature during siliconization, T0 is the ambient temperature, α1 is the average expansion coefficient of the bottom plate 2, α2 is the average expansion coefficient of the sagger ring 1, and h is the wall thickness of the sagger ring 1. It is ensured that there is no large force between the sagger ring 1 and the sagger bottom plate 2 before and after siliconization.

[0046] In this embodiment, during actual production, the inner diameter of the effective area of ​​the sagger charging, that is, the inner diameter D of the sagger ring 1 can be in the range of 300-500mm according to the sizes of different carbon ceramic disks to be siliconized; the working temperature T1 during siliconization is in the range of 1500-1700°C according to the siliconization process curve of different process requirements; the ambient temperature T0 is in the range of 5-35°C; the wall thickness h of the sagger ring 1 is in the range of 12-20mm.

[0047] The average expansion coefficient α1 of the sagger bottom plate 2 is divided into three temperature stages according to the siliconizing process temperature required by different processes:

[0048] ①At 1500-1575℃, the value is 4.9×10 -6 / ℃;

[0049] ②At 1575-1650℃, the value is 5.4×10 -6 / ℃;

[0050] ③At 1650-1700℃, the value is 5.9×10 -6 / ℃;

[0051] The average expansion coefficient α2 of the sagger ring 1 is divided into three temperature stages according to the siliconizing process temperature required by different processes:

[0052] ①At 1500-1575℃, the value is 4.1×10 -6 / ℃;

[0053] ②At 1575-1650℃, the value is 4.6×10 -6 / ℃;

[0054] ③At 1650-1700℃, the value is 5.1×10 -6 / ℃.

[0055] In addition, in this embodiment, a notch 5 may be provided at the middle and upper part of the sagger ring 1, and the notch 5 is used as an outlet for silicon vapor during silicon removal.

[0056] S5, the inner wall of the sagger ring 1 and the upper surface of the bottom plate 2 are coated with silicon carbide coating, and sent into an oven. After curing and forming at 200-300°C, check whether the coating is suitable, and then sinter the sagger with the inner surface coated with silicon carbide coating at 1500-1700°C to form the silicon carbide coating.

[0057] In this embodiment, the components of the silicon carbide coating are: 60% to 70% silicon carbide, 3% to 5% carbon powder, 10% to 15% silicon powder, 10% to 18% phenolic or furan resin, alcohol, etc. The purpose of applying the silicon carbide coating is to prevent the carbon ceramic plate and the sagger tooling from sticking together after siliconization, so as to facilitate separation.

[0058] Example 3

[0059] Figure 3 It is a type of sagger tooling for efficient siliconization in this embodiment. The main body of the sagger tooling for efficient siliconization includes two parts, namely the sagger ring 1 and the sagger bottom plate 2. A female head for splicing the sagger wall is provided on a section of the sagger ring 1, and the male head on the sagger bottom plate 2 corresponds to the annular flange 3. A radial gap 4 is provided between the outer wall of the female head and the inner wall of the male head. The outer edge 201 of the sagger bottom plate 2 is slightly wider than the sagger ring 1, forming a Figure 3 The outer edge 201 is shown. At the other end of the sagger ring 1, four notches 5 are circumferentially provided. This embodiment is only one form of the sagger tooling for efficient siliconizing. The sagger tooling for efficient siliconizing in the present invention includes but is not limited to this form, and the protection scope of the present invention is not limited thereto.

[0060] Example 4

[0061] Figure 4 It is a type of sagger tooling for efficient siliconizing in this embodiment. The main body of the sagger tooling for efficient siliconizing includes two parts, namely, a sagger ring 1 and a sagger bottom plate 2. The sagger bottom plate 2 has an annular flange 3 for buckling the bottom plate 2 and the sagger ring 1. The sagger ring 1 ensures that the bottom end surface is flat and directly matches the end surface on the bottom plate 2. The buckling method is as follows Figure 4 As shown; a radial gap 4 is provided between the inner wall of the sagger ring 1 and the outer wall of the annular flange 3. There are circumferentially arranged notches 5 on the other side of the sagger ring 1, which are used as the outlet of silicon vapor during silicon removal. This embodiment is only one form of a sagger tooling for efficient siliconization. The sagger tooling for efficient siliconization in the present invention includes but is not limited to this form, and the protection scope of the present invention is not limited thereto.

[0062] The above are only preferred embodiments of the present invention and are not intended to limit the present invention. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. A sagger for efficient siliconizing, characterized in that: It comprises a sagger ring and a base plate, wherein the sagger ring is placed on the base plate to form a split-structure sagger structure; an annular flange protruding toward the upper surface of the base plate is provided on the base plate, the bottom surface of the sagger ring is coaxially fitted and installed with the annular flange, and a radial gap is provided between the annular flange and the sagger ring to accommodate the expansion or contraction deformation of the sagger ring.

2. The sagger for efficient siliconizing according to claim 1, characterized in that: The sagger ring comprises a carbon-carbon sagger ring blank, and the bottom plate comprises a carbon-carbon round plate blank; the carbon-carbon sagger ring blank and the carbon-carbon round plate blank are both prepared by alternately needling and stacking carbon fiber cloth and carbon fiber mesh to form a composite cloth structure.

3. The sagger for efficient siliconizing according to claim 2, characterized in that: The radial clearance between the annular flange and the sagger ring is based on Wherein L is the radial clearance between the annular flange and the sagger ring; D is the inner diameter of the effective charging area of ​​the sagger structure, that is, the inner diameter of the sagger ring; T1 is the working temperature during siliconization, T0 is the ambient temperature, α1 is the average expansion coefficient of the bottom plate, α2 is the average expansion coefficient of the sagger ring, and h is the wall thickness of the sagger ring.

4. The sagger for efficient siliconizing according to claim 2, characterized in that: The carbon fiber cloth in the composite cloth structure accounts for 30% to 50% by weight, and the carbon fiber mesh accounts for 50% to 70% by weight; the composite cloth structure of the carbon-carbon sagger ring embryo and the carbon-carbon circular plate embryo is also subjected to carbon deposition and densification treatment by chemical vapor deposition, and the gas used in the chemical vapor deposition is alkane gas, and the density of the carbon-carbon sagger ring embryo and the carbon-carbon circular plate embryo is 1.1 to 1.8 g / cm 3 between.

5. The sagger for efficient siliconizing according to claim 4, characterized in that: The inner wall of the sagger structure formed by the sagger ring and the bottom plate is also provided with a silicon carbide coating.

6. The sagger for efficient siliconizing according to claim 5, characterized in that: The raw material components of the silicon carbide coating include 60% to 70% silicon carbide, 3% to 5% carbon powder, 10% to 15% silicon powder, and 10% to 18% resin; the raw material components are evenly mixed, cured at 200 to 300° C., and then subjected to high-temperature siliconization and sintering at 1500 to 1700° C. to form the silicon carbide coating.

7. The sagger for efficient siliconizing according to claim 1, characterized in that: A notch is arranged at the middle and upper part of the sagger ring, and the notch is used as an outlet for silicon vapor during silicon removal.

8. A method for preparing a high-efficiency siliconizing sagger, used for preparing the high-efficiency siliconizing sagger according to claim 1, characterized in that: include: S1, alternately needling a carbon fiber cloth and a carbon fiber web to form a composite cloth, attaching the composite cloth to a universal barrel-shaped mold, and continuously needling to obtain a sagger ring preform; After the composite cloth is continuously needled out of a flat plate, a flat plate preform is formed for preparing a sagger bottom plate; S2, using a chemical vapor deposition process to perform carbon deposition and densification on the sagger ring preform and the flat plate preform to obtain two carbon-carbon embryos, a carbon-carbon sagger ring and a carbon-carbon base plate; S3, subjecting the carbon-carbon embryo to high temperature treatment, wherein the high temperature treatment temperature is between 1800 and 2200° C.; S4. According to the structural dimensions of the sagger ring and the bottom plate, the sagger ring preform after high temperature treatment is fine-processed to form a sagger ring structure, and the flat plate preform after high temperature treatment is fine-processed to form a bottom plate structure with an annular flange.

9. The method for preparing a sagger for efficient siliconizing according to claim 8, characterized in that: The radial clearance between the annular flange and the sagger ring is based on Wherein L is the radial clearance between the annular flange and the sagger ring; D is the inner diameter of the effective charging area of ​​the sagger structure, that is, the inner diameter of the sagger ring; T1 is the working temperature during siliconization, T0 is the ambient temperature, α1 is the average expansion coefficient of the bottom plate, α2 is the average expansion coefficient of the sagger ring, and h is the wall thickness of the sagger ring.

10. The method for preparing a sagger for efficient siliconizing according to claim 8, characterized in that: The inner wall of the sagger structure formed by the sagger ring and the bottom plate is also provided with a silicon carbide coating; the raw material components of the silicon carbide coating include 60% to 70% silicon carbide, 3% to 5% carbon powder, 10% to 15% silicon powder, and 10% to 18% resin; the raw material components are evenly mixed, cured at 200 to 300° C., and then sintered at a high temperature of 1500 to 1700° C. to form the silicon carbide coating.