Novel radiant panel for enhancing infrared absorption based on PECVD (plasma enhanced chemical vapor deposition) technology

Abstract

The invention discloses a novel radiant panel for enhancing infrared absorption based on PECVD (plasma enhanced chemical vapor deposition) technology, which comprises a base material, and the base material comprises a radiant panel with thermal conductivity; the multiple sets of deposited films have the effect of increasing the base material strength or the radiation absorption efficiency; and the heat conduction pipe comprises a circulating water pipe, and the circulating water pipe is fixedly installed on one side of the base material and assembled with the base material for use. According to the novel radiant panel capable of enhancing infrared absorption, the infrared absorption, the heat conductivity coefficient and the radiation heat exchange efficiency of the radiant panel are remarkably improved by depositing multiple layers of thin films on the surface of the radiant panel, and the novel radiant panel has high infrared absorption efficiency, excellent heat stability, good durability and high adhesive force and is suitable for the field of high-efficiency radiation heat exchange.

Description

Technical Field

[0001] The invention relates to the technical field of radiation air conditioning systems, and in particular to a novel radiation panel with enhanced infrared absorption based on PECVD technology, which is particularly suitable for fields with high heat loads. Background Art

[0002] Traditional radiant panels usually use spraying high-radiant coatings to increase infrared emissivity, but their infrared absorption efficiency and thermal stability are limited by the physical and chemical properties of the coatings and cannot meet the needs of high-efficiency radiant heating. At the same time, due to the nature of the material, its thermal conductivity is low (<1 W / (m·K)).

[0003] Based on the above, it is an urgent need to develop a radiation panel with high infrared absorption efficiency, excellent thermal stability, durability and high equivalent conductivity. Therefore, the present invention proposes a new radiation panel with enhanced infrared absorption based on PECVD technology. Summary of the invention

[0004] The purpose of the present invention is to provide a new type of radiation plate with enhanced infrared absorption based on PECVD technology. By depositing multiple layers of films that enhance infrared absorption on the surface of the radiation plate, its infrared absorption efficiency, surface thermal conductivity and radiation heat exchange efficiency are improved, thereby solving the problems of low absorption efficiency and poor thermal stability in the prior art and solving the problems raised in the above-mentioned background technology.

[0005] To achieve the above-mentioned purpose, the present invention provides the following technical solutions: a new type of radiation plate with enhanced infrared absorption based on PECVD technology, comprising a substrate, wherein the substrate comprises a radiation plate with thermal conductivity; a deposited film, wherein multiple groups of the deposited films have the effect of increasing the strength of the substrate or the radiation absorption efficiency; and a heat pipe, wherein the heat pipe comprises a circulating water pipe, wherein the circulating water pipe is fixedly installed on one side of the substrate and assembled with the substrate for use.

[0006] A novel method for manufacturing an infrared radiation absorption plate based on PECVD technology, comprising:

[0007] Step S1: Select a substrate and perform impurity removal treatment on the surface of the substrate;

[0008] Step S2: using PECVD equipment to deposit and fuse the film with the substrate;

[0009] Step S21: depositing a base layer onto the surface of the metal steel plate under the conditions that the deposition gas is monosilane and oxygen and the deposition temperature is 350° C.;

[0010] Step S22: depositing the intermediate layer to the surface of the bottom layer under the condition that the deposition gas is methane and hydrogen and the deposition temperature is 500° C.;

[0011] Step S23: depositing a top layer film onto the surface of the middle layer under the conditions that the deposition gas is titanium chloride and oxygen and the deposition temperature is 550° C.;

[0012] Step S3: annealing the multilayer film in a nitrogen atmosphere at a temperature of 600° C. for 1 hour to form a radiation plate;

[0013] Step S4: The radiation panel and the circulating water pipe are assembled to complete the operation.

[0014] As a further solution of the present invention: a new type of radiation plate with enhanced infrared absorption based on PECVD technology, the substrate comprises a metal steel plate, and the thermal conductivity of the metal steel plate is 45-50 W / (m·K).

[0015] As a further solution of the present invention: a new type of radiation plate with enhanced infrared absorption based on PECVD technology, the deposited film includes a top film, a middle layer and a bottom layer, one side of the bottom layer is fixedly connected to the metal steel plate, the other side of the bottom layer is fixedly connected to the middle layer, and the side of the middle layer away from the bottom layer is fixedly connected to the top film.

[0016] As a further solution of the present invention: a new type of radiation plate with enhanced infrared absorption based on PECVD technology, the material of the top film is titanium dioxide, and the thickness of the top film is 80-100nm.

[0017] As a further solution of the present invention: a new type of radiation plate with enhanced infrared absorption based on PECVD technology, the material of the middle layer is silicon carbide, and the thickness of the middle layer is 400-500nm.

[0018] As a further solution of the present invention: a new type of radiation plate with enhanced infrared absorption based on PECVD technology, the material of the bottom layer is silicon dioxide, and the thickness of the silicon dioxide is 100-120nm.

[0019] As a further solution of the present invention: a new type of radiation plate with enhanced infrared absorption based on PECVD technology, the surface of the metal steel plate is free of pollutants and oxide layer after cleaning.

[0020] As a further solution of the present invention: a new type of radiation plate with enhanced infrared absorption based on PECVD technology, the deposited film is annealed at a temperature of 400-600°C and a time of 1-2h.

[0021] Compared with the prior art, the present invention has the following beneficial effects:

[0022] The present invention provides a new type of radiation plate with enhanced infrared absorption, which significantly improves its infrared absorption, thermal conductivity and radiation heat exchange efficiency by depositing multiple layers of thin films on the surface of the radiation plate. It has high infrared absorption efficiency, excellent thermal stability, good durability and high adhesion, and is suitable for the field of high-efficiency radiation heat exchange.

[0023] 1. The present invention has the characteristics of high infrared absorption efficiency: through the multi-layer thin film structure design, the absorption rate of the radiation plate in the infrared band can reach more than 90%, which significantly improves the radiation heat exchange efficiency.

[0024] 2. The present invention has the characteristic of excellent thermal stability: by adopting high-temperature stable materials such as titanium dioxide, silicon carbide and silicon dioxide, the film layer has stable performance at high temperatures and is suitable for high-temperature industrial environments.

[0025] 3. The present invention has the characteristics of good durability: the multi-layer film has high wear resistance and anti-aging performance, so that the infrared absorption performance is maintained well after long-term use.

[0026] 4. The present invention has the characteristic of high adhesion: the adhesion between the film layer and the steel plate is improved by the bottom layer of silicon dioxide, so that the film layer is not easy to peel off under high temperature and mechanical stress.

[0027] 5. The film formed by the present invention has higher density, thereby greatly improving its thermal conductivity (>30 W / (m·K)).

[0028] 6. The present invention has the characteristics of being easy to apply industrially: the PECVD technology is mature, the thin film deposition process is controllable, and it is suitable for large-scale industrial production. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] Figure 1 It is a schematic diagram of the structure of the radiation plate and the thin film deposited on its surface in an embodiment of the present invention;

[0030] Figure 2 It is a schematic diagram of the structure of depositing thin film materials in an embodiment of the present invention;

[0031] In the figure: 1. Top layer; 2. Middle layer; 3. Bottom layer; 4. Metal steel plate; 5. Circulating water pipe; 6. Titanium dioxide; 7. Silicon carbide; 8. Silicon dioxide. DETAILED DESCRIPTION

[0032] The technical solutions in the embodiments of the present invention will be described clearly and completely below in conjunction with the accompanying drawings.

[0033] In the embodiment of the present invention, please refer to Figure 1 and Figure 2A novel radiation plate with enhanced infrared absorption based on PECVD technology, comprising a substrate, the substrate comprising a radiation plate with thermal conductivity, the substrate comprising a metal steel plate 4, the thermal conductivity of the metal steel plate 4 is 45-50 W / (m·K), the surface of the metal steel plate 4 is free of pollutants and oxide layer after cleaning, specifically by mechanical cleaning, chemical cleaning or plasma cleaning, and ensuring that the surface of the metal steel plate 4 is free of pollutants or oxide layer;

[0034] Among them, mechanical cleaning can be carried out by ultrasonic cleaning or high-pressure water cleaning, chemical cleaning can remove residual oil stains with petroleum-based solvents, remove oxides with hydrochloric acid or sulfuric acid, and finally use neutralizing cleaning liquid to keep the pH value of the metal steel plate 4 close to 7.

[0035] Other embodiments of the present invention: please refer to Figure 1 and Figure 2 , and also includes deposited films. Multiple groups of the deposited films have the effect of increasing the strength of the substrate or the radiation absorption efficiency. In this embodiment, plasma enhanced chemical vapor deposition (PECVD) technology is used to deposit a multilayer film on the surface of the radiation plate. The deposited film includes a top film 1, an intermediate layer 2 and a bottom layer 3. One side of the bottom layer 3 is fixedly connected to the metal steel plate 4, and the other side of the bottom layer 3 is fixedly connected to the intermediate layer 2. The side of the intermediate layer 2 away from the bottom layer 3 is fixedly connected to the top film 1.

[0036] The material of the top film 1 is titanium dioxide 6, and the thickness of the top film 1 is 80-100nm. The top film 1 can reduce infrared reflection and enhance the overall absorption effect;

[0037] The material of the intermediate layer 2 is silicon carbide 7, and the thickness of the intermediate layer 2 is 400-500nm. The intermediate layer 2 can significantly improve the infrared absorption efficiency;

[0038] The material of the bottom layer 3 is silicon dioxide 8, and the thickness of the silicon dioxide 8 is 100-120nm. The silicon dioxide 8 can improve the adhesion and thermal stability between the film and the steel plate.

[0039] Other embodiments of the present invention: please refer to Figure 1 , and also includes a heat conduction pipe, which includes a circulating water pipe 5. The circulating water pipe 5 is fixedly installed on one side of the substrate and assembled with the substrate to match the condenser, condensation fins or air cooler and other equipment.

[0040] Other embodiments of the present invention: A novel method for manufacturing an infrared absorption radiation plate based on PECVD technology, which mainly uses plasma enhanced chemical vapor deposition PECVD technology to deposit a multilayer film on the surface of the radiation plate, specifically including:

[0041] Step S1: Select a substrate and perform impurity removal treatment on the surface of the substrate;

[0042] Step S2: using PECVD equipment to deposit and fuse the film with the substrate;

[0043] Step S21: depositing the bottom layer 3 onto the surface of the metal steel plate 4 under the conditions of monosilane and oxygen as the deposition gas and a deposition temperature of 350° C., so as to improve the adhesion and thermal stability of the film to the steel plate;

[0044] Step S22: depositing the intermediate layer 2 to the surface of the bottom layer 3 under the condition that the deposition gas is methane and hydrogen and the deposition temperature is 500° C., so as to significantly improve the infrared absorption efficiency;

[0045] Step S23: depositing the top film 1 onto the surface of the intermediate layer 2 under the conditions that the deposition gas is titanium chloride and oxygen and the deposition temperature is 550° C., so as to reduce infrared reflection and enhance the overall absorption effect;

[0046] Step S3: annealing the multilayer film in a nitrogen atmosphere at a temperature of 400-600° C. for 1 hour to form a radiation plate, so as to improve the crystal structure and adhesion of the film layer;

[0047] Step S4: The radiation panel and the circulating water pipe 5 are assembled to complete the operation.

[0048] In addition, after the multi-layer thin film deposition is completed, this embodiment can also simulate and experiment to optimize the thickness and deposition parameters of each thin film layer to ensure that the film layer has the best infrared absorption performance.

[0049] Working principle of the present invention: The present invention deposits multiple layers of infrared absorption-enhancing thin films on the surface of the radiation plate to improve its infrared absorption efficiency, surface thermal conductivity and radiation heat exchange efficiency.

[0050] What is described above is only a preferred specific implementation manner of the present invention, but the protection scope of the present invention is not limited thereto. Any technician familiar with the technical field can make equivalent replacements or changes according to the technical scheme and inventive concept of the present invention within the technical scope disclosed by the present invention, which should be covered by the protection scope of the present invention.

Claims

1. A new type of radiation panel with enhanced infrared absorption based on PECVD technology, characterized in that: The invention comprises a substrate, wherein the substrate comprises a radiation plate having thermal conductivity; Depositing thin films, wherein the plurality of deposited thin films have an effect of increasing substrate strength or radiation absorption efficiency; and A heat conduction pipe, the heat conduction pipe comprising a circulating water pipe (5), the circulating water pipe (5) being fixedly mounted on one side of a substrate and assembled with the substrate for use.

2. According to claim 1, a new type of radiation panel with enhanced infrared absorption based on PECVD technology is characterized in that: The substrate comprises a metal steel plate (4), and the thermal conductivity of the metal steel plate (4) is 45-50 W / (m·K).

3. According to claim 2, a new type of radiation panel with enhanced infrared absorption based on PECVD technology is characterized in that: The deposited thin film comprises a top film (1), an intermediate layer (2) and a bottom layer (3), one side of the bottom layer (3) is fixedly connected to a metal steel plate (4), the other side of the bottom layer (3) is fixedly connected to the intermediate layer (2), and the side of the intermediate layer (2) away from the bottom layer (3) is fixedly connected to the top film (1).

4. According to claim 3, a new type of radiation panel with enhanced infrared absorption based on PECVD technology is characterized in that: The material of the top film (1) is titanium dioxide (6), and the thickness of the top film (1) is 80-100 nm.

5. According to claim 4, a new type of radiation panel with enhanced infrared absorption based on PECVD technology is characterized in that: The material of the intermediate layer (2) is silicon carbide (7), and the thickness of the intermediate layer (2) is 400-500 nm.

6. The novel radiation panel with enhanced infrared absorption based on PECVD technology according to claim 5 is characterized in that: The material of the bottom layer (3) is silicon dioxide (8), and the thickness of the silicon dioxide (8) is 100-120 nm.

7. The novel radiation panel with enhanced infrared absorption based on PECVD technology according to claim 6 is characterized in that: After cleaning, the surface of the metal steel plate (4) is free of pollutants and oxide layers.

8. The novel radiation panel with enhanced infrared absorption based on PECVD technology according to claim 7 is characterized in that: The deposited film is subjected to an annealing treatment at a temperature of 400-600° C. for a time of 1-2 hours.

9. A method for manufacturing a novel PECVD-based enhanced infrared absorption radiation plate according to claims 1-8, characterized in that: include Step S1: Select a substrate and perform impurity removal treatment on the surface of the substrate; Step S2: using PECVD equipment to deposit and fuse the film with the substrate; Step S3: annealing the multilayer film in a nitrogen atmosphere at a temperature of 600° C. for 1 hour to form a radiation plate; Step S4: The radiation panel and the circulating water pipe (5) are assembled to complete the operation.

10. The novel radiation panel with enhanced infrared absorption based on PECVD technology according to claim 9 is characterized in that: The step S2 includes Step S21: depositing the bottom layer (3) onto the surface of the metal steel plate (4) under the conditions that the deposition gas is monosilane and oxygen and the deposition temperature is 350° C.; Step S22: depositing the intermediate layer (2) onto the surface of the bottom layer (3) under the conditions that the deposition gas is methane and hydrogen and the deposition temperature is 500° C.; Step S23: depositing the top film (1) onto the surface of the intermediate layer (2) under the conditions that the deposition gas is titanium chloride and oxygen and the deposition temperature is 550°C.

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