Temperature sensor for rapid calibration and calibration method of temperature sensor

Abstract

The invention provides a temperature sensor for rapid calibration and a calibration method of the temperature sensor, and the temperature sensor comprises a bias module which is used for providing a bias current for a temperature sensing module; the temperature sensing module is used for determining a first VBE voltage and a second VBE voltage according to the bias current, generating a voltage signal in positive correlation with the temperature through a VBE voltage difference between the first VBE voltage and the second VBE voltage, and transmitting the voltage signal to the analog-to-digital conversion module and the instrument amplifier respectively; the analog-to-digital conversion module is used for determining a first temperature value through the voltage signal and the original reference voltage of the temperature sensor; the instrument amplifier is used for determining a second temperature value through the voltage signal; wherein the temperature difference value between the first temperature value and the second temperature value is used for calibrating the original reference voltage to obtain the target reference voltage. According to the embodiment of the invention, the environment requirement for temperature sensor chip calibration can be greatly reduced, the calibration time of the chip is shortened, and the production efficiency of the chip is improved.

Description

Technical Field

[0001] The present disclosure relates to the technical field of temperature sensors, and in particular to a temperature sensor for rapid calibration and a calibration method for the temperature sensor. Background Art

[0002] Temperature sensors are one of the most widely used sensors at present. There are a large number of scenarios that require monitoring and controlling temperature, including but not limited to industry, medical applications, food and environmental monitoring, etc. Temperature sensors manufactured using standard CMOS processes are very attractive due to their low cost and digital interface characteristics. However, if not calibrated, the accuracy of commercially available temperature sensors is relatively poor, resulting in large measurement errors within the industrial temperature range (-40°C to 125°C), which cannot meet application requirements. Therefore, temperature sensors usually require calibration before entering the market.

[0003] Traditional calibration methods require a stable and accurate ambient temperature, which results in high calibration costs. At the same time, traditional calibration methods also require the sensor chip to reach the same temperature as the reference thermometer, a process that usually takes more than ten minutes, greatly reducing chip production efficiency. Summary of the invention

[0004] In view of this, the present disclosure proposes a temperature sensor for rapid calibration and a temperature sensor calibration method to solve the problem in the related art that the temperature sensor calibration time is long, resulting in low sensor chip production efficiency.

[0005] The first embodiment of the present disclosure proposes a temperature sensor for rapid calibration, wherein the temperature sensor includes a bias module, a temperature sensing module, an analog-to-digital conversion module, and an instrument amplifier:

[0006] A bias module, used for providing a bias current for the temperature sensing module;

[0007] a temperature sensing module, used for determining a first VBE voltage and a second VBE voltage according to the bias current, generating a voltage signal positively correlated with temperature through a VBE voltage difference between the first VBE voltage and the second VBE voltage, and transmitting the voltage signal to an analog-to-digital conversion module and an instrument amplifier respectively;

[0008] The analog-to-digital conversion module is used to determine a first temperature value through the voltage signal and an original reference voltage of the temperature sensor;

[0009] The instrument amplifier is used to determine a second temperature value through the voltage signal;

[0010] The temperature difference between the first temperature value and the second temperature value is used to calibrate the original reference voltage to obtain a target reference voltage.

[0011] The disclosed embodiment determines a first temperature value by using the voltage signal and the original reference voltage of the temperature sensor through an analog-to-digital conversion module; determines a second temperature value by using the voltage signal through the instrument amplifier; and calibrates the original reference voltage by using the temperature difference between the first temperature value and the second temperature value to obtain a target reference voltage, which can greatly reduce the environmental requirements for the calibration of the temperature sensor chip and reduce the calibration time of the chip, thereby improving chip production efficiency.

[0012] In an embodiment of the present disclosure, the bias module includes a first PNP transistor and a second PNP transistor;

[0013] The base and collector of the first PNP transistor are connected via a first node, and the emitter of the first PNP transistor is connected to the positive input terminal of the operational amplifier via a first resistor;

[0014] The base of the second PNP transistor is connected to the second node through the second resistor, the collector of the second PNP transistor is connected to the second node, and the second node is connected to the first node; the emitter of the second PNP transistor is connected to the negative input terminal of the operational amplifier; and the output terminal of the operational amplifier is connected to the temperature sensing module.

[0015] In the embodiment of the present disclosure, the emitter of the first PNP transistor is connected to the first terminal of the first DEM module, and the emitter of the second PNP transistor is connected to the second terminal of the first DEM module.

[0016] In the disclosed embodiment, the positive input terminal of the operational amplifier is connected to the first resistor through a first chopping module, and the negative input terminal of the operational amplifier is connected to the emitter of the second PNP transistor through the first chopping module.

[0017] In the embodiment of the present disclosure, the temperature sensing module includes a third PNP transistor and a fourth PNP transistor;

[0018] The base and collector of the third PNP transistor are connected via a third node, and the emitter of the third PNP transistor is connected to the output terminal of the operational amplifier;

[0019] The base and collector of the fourth PNP transistor are connected via a fourth node, the emitter of the fourth PNP transistor is connected to the output end of the operational amplifier, and the fourth node is connected to the third node.

[0020] In the embodiment of the present disclosure, the emitter of the third PNP transistor is connected to the output end of the operational amplifier through the first end of the second DEM module; the emitter of the fourth PNP transistor is connected to the output end of the operational amplifier through the second end of the second DEM module.

[0021] The embodiment of the second aspect of the present disclosure provides a temperature sensor calibration method, which is implemented based on the temperature sensor for rapid calibration described in the embodiment of the second aspect; the method includes:

[0022] Acquire a first temperature value through an instrumentation amplifier;

[0023] Obtaining a second temperature value quantized by an analog-to-digital converter;

[0024] According to the temperature difference between the first temperature value and the second temperature value, adjusting the reference voltage of the temperature sensor from the original reference voltage to the target reference voltage;

[0025] A third temperature value quantized by the analog-to-digital converter based on the target reference voltage is obtained.

[0026] An embodiment of a third aspect of the present disclosure provides a temperature sensor calibration device, including:

[0027] A first temperature value acquisition module, used for acquiring a first temperature value through an instrument amplifier;

[0028] A second temperature value acquisition module, used to acquire a second temperature value quantized by the analog-to-digital converter;

[0029] A reference voltage adjustment module, configured to adjust a reference voltage of the temperature sensor from an original reference voltage to a target reference voltage according to a temperature difference between the first temperature value and the second temperature value;

[0030] The third temperature value acquisition module is used to acquire a third temperature value quantized by the analog-to-digital converter based on the target reference voltage.

[0031] An embodiment of the fourth aspect of the present disclosure provides a computer device, which includes a memory and a processor, wherein the memory and the processor are communicatively connected to each other, the memory stores computer instructions, and the processor executes the temperature sensor calibration method described in the second aspect by executing the computer instructions.

[0032] An embodiment of the fifth aspect of the present disclosure provides a computer-readable storage medium, on which computer instructions are stored, and the computer instructions are used to enable a computer to execute the temperature sensor calibration method described in the second aspect.

[0033] Additional aspects and advantages of the present disclosure will be given in part in the following description and in part will become apparent from the following description or be learned through practice of the present disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] By reading the detailed description of the preferred embodiment below, various other advantages and benefits will become clear to those of ordinary skill in the art. The accompanying drawings are only used for the purpose of illustrating the preferred embodiment and are not considered to be limitations of the present disclosure. In addition, the same reference symbols are used to represent the same components throughout the accompanying drawings.

[0035] In the attached picture:

[0036] Figure 1 A schematic diagram of the structure of a temperature sensor for rapid calibration provided by an embodiment of the present disclosure is shown;

[0037] Figure 2 A schematic diagram of the structure of another temperature sensor for rapid calibration provided by an embodiment of the present disclosure is shown;

[0038] Figure 3 A schematic diagram of the structure of another temperature sensor for rapid calibration provided by an embodiment of the present disclosure is shown;

[0039] Figure 4 shows the AΔV provided by an embodiment of the present disclosure BE Schematic diagram of temperature change;

[0040] Figure 5 A schematic diagram showing a flow chart of a temperature sensor calibration method provided by an embodiment of the present disclosure;

[0041] Figure 6 A schematic diagram of the structure of a computer device provided by an embodiment of the present disclosure is shown;

[0042] Figure 7 A schematic diagram of a storage medium provided by an embodiment of the present disclosure is shown. DETAILED DESCRIPTION

[0043] The exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. Although the exemplary embodiments of the present disclosure are shown in the accompanying drawings, it should be understood that the present disclosure can be implemented in various forms and should not be limited by the embodiments described herein. On the contrary, these embodiments are provided in order to enable a more thorough understanding of the present disclosure and to fully convey the scope of the present disclosure to those skilled in the art.

[0044] It should be noted that, unless otherwise specified, the technical terms or scientific terms used in the present disclosure should have the common meanings understood by those skilled in the art to which the present disclosure belongs.

[0045] The following describes the technical scenarios involved in the embodiments of the present disclosure.

[0046] The calibration of traditional temperature sensor chips requires that the temperature of each packaged sensor be the same as that of a reference thermometer. On the one hand, this means that a relatively accurate ambient temperature is required for calibration, and it costs a lot to form an accurate and stable ambient temperature. On the other hand, since the sensor is not at the required temperature when entering the calibration equipment, it usually takes more than ten minutes for the sensor chip to reach the same temperature as the reference thermometer. This stabilization time greatly reduces chip production efficiency.

[0047] Compared with the traditional temperature sensor calibration method, the present invention uses a voltage calibration method to obtain the actual temperature value of the chip by measuring the voltage value of the chip △VBE. The temperature sensor chip can be calibrated based on this temperature value. This calibration method does not require a particularly precise ambient temperature, which reduces the calibration cost. At the same time, the traditional calibration method requires waiting for more than ten minutes for the sensor chip to reach the same temperature as the reference thermometer to complete the chip calibration. The present invention does not require the sensor chip to reach the same temperature as the reference thermometer. It only takes a few seconds to measure the chip's own temperature to complete the calibration. This calibration method greatly improves chip production efficiency.

[0048] In this embodiment, a temperature sensor for rapid calibration is provided. Figure 1 is a schematic diagram of the structure of a temperature sensor for rapid calibration according to an embodiment of the present disclosure, such as Figure 1 As shown, the temperature sensor includes a bias module, a temperature sensing module, an analog-to-digital conversion module and an instrument amplifier:

[0049] The bias module is used to provide a bias current for the temperature sensing module.

[0050] In some specific embodiments, the bias module can be understood as Figure 2 A bias circuit in which the bias circuit comprises a first PNP transistor Q1 and a second PNP transistor Q2 (forming a current mirror); wherein the base and collector of the first PNP transistor Q1 are connected via a first node W1, and the emitter of the first PNP transistor Q1 is connected to the positive input terminal of the operational amplifier E1 via a first resistor Rb;

[0051] The base of the second PNP transistor Q2 is connected to the second node W2 through the second resistor Rb / p, the collector of the second PNP transistor Q2 is connected to the second node W2, and the second node W2 is connected to the first node W1; the emitter of the second PNP transistor Q2 is connected to the negative input terminal of the operational amplifier E1; the output terminal of the operational amplifier E1 is connected to the temperature sensing module.

[0052] In the embodiment of the present disclosure, the current source current ratio of the bias circuit is p:1, and the bias current on the second PNP transistor Q2 is p:1 to the bias current on the first PNP transistor Q1, thereby forming a voltage △VBE1 on the first resistor Rb, thereby forming a bias current that is positively correlated with temperature.

[0053] A compensation resistor with a resistance of Rb / p is connected in series to the base of Q2, and the voltage formed on Rb is:

[0054]

[0055] Among them, β is the current amplification factor of the transistor, and the bias current formed is:

[0056]

[0057] This current can be used to compensate for the temperature measurement error caused by the limited current gain β of the transistor in the temperature sensing circuit.

[0058] In some specific embodiments, the emitter of the first PNP transistor Q1 is connected to the first terminal of the first DEM module DEM1, and the emitter of the second PNP transistor Q2 is connected to the second terminal of the first DEM module DEM2.

[0059] In the disclosed embodiment, in order to reduce the temperature measurement error caused by the mismatch of the current mirror formed by the first PNP transistor Q1 and the second PNP transistor Q2, the current mirror in the bias circuit adopts the dynamic element matching (DEM) technology. After using the DEM technology, the bias circuit has a total of p+1 groups of unit current sources, each of which is used as the bias current of Q1 in one cycle, and the other p groups of unit current sources are used as the bias current of Q2. After p+1 cycles, a cycle is formed. Considering the offset of the current mirror tube, a total of p+1 groups of bias currents are formed. By averaging the p+1 groups of bias currents, the first-order error can be eliminated.

[0060] In some specific embodiments, the positive input terminal of the operational amplifier E1 is connected to the first resistor Rb through the first chopping module chop1, and the negative input terminal of the operational amplifier E1 is connected to the emitter of the second PNP transistor Q2 through the first chopping module chop1.

[0061] In the embodiment of the present disclosure, the operational amplifier E1 in the bias circuit uses a chopping technique, which can eliminate the temperature error caused by the offset of the operational amplifier E1.

[0062] The temperature sensing module is used to determine a first VBE voltage and a second VBE voltage according to the bias current, generate a voltage signal positively correlated with temperature through a VBE voltage difference between the first VBE voltage and the second VBE voltage, and transmit the voltage signal to an analog-to-digital conversion module and an instrument amplifier, respectively.

[0063] In some specific embodiments, the temperature sensing module can be understood as Figure 2 The temperature sensing circuit comprises a third PNP transistor Q3 and a fourth PNP transistor Q4;

[0064] The base and collector of the third PNP transistor Q3 are connected via a third node W3, and the emitter of the third PNP transistor Q3 is connected to the output terminal of the operational amplifier (eg Figure 3 shown).

[0065] The base and collector of the fourth PNP transistor Q4 are connected via a fourth node, and the emitter of the fourth PNP transistor Q4 is connected to the output terminal of the operational amplifier (eg Figure 3 As shown), the fourth node W4 is connected to the third node W3.

[0066] In the embodiment of the present disclosure, the bias current ratio of the two PNP transistors in the temperature sensing circuit is p:1, the bias current on the fourth PNP transistor Q4 and the bias current on the third PNP transistor Q3 are p:1, and the base collector voltage formed on the third PNP transistor Q3 and the fourth PNP transistor Q4 is V BE1 With V BE2 , V BE2 With V BE1 The voltage difference is the PTAT voltage ΔV BE The voltage has a good linear relationship with the temperature, so it can be used for temperature measurement.

[0067] In some specific embodiments, the emitter of the third PNP transistor Q3 is connected to the output end of the operational amplifier through the first end of the second DEM module DEM2; the emitter of the fourth PNP transistor Q4 is connected to the output end of the operational amplifier through the second end of the second DEM module DEM2.

[0068] In the embodiment of the present disclosure, the temperature sensing circuit also uses DEM technology, which can eliminate the ΔV caused by the misalignment of the current mirror tube. BE Error. AΔV BE Variation with temperature, e.g. Figure 4 As shown in the figure, since the dynamic element matching technology is used in the circuit, this technology can reduce the circuit offset, and it can be considered that AΔV in each chip BE The linear relationship with temperature is consistent

[0069] The analog-to-digital conversion module is used to determine a first temperature value according to the voltage signal and an original reference voltage of the temperature sensor.

[0070] In the embodiment of the present disclosure, the analog-to-digital conversion module can be understood as Figure 2 The ADC module in the ADC uses a two-order incremental Sigma Delta ADC. Due to oversampling and noise shaping techniques, the Sigma Delta ADC can achieve a higher effective number of bits to meet the quantization accuracy requirements of temperature information. The downsampling filter and calibration algorithm of the Sigma Delta ADC can be partially implemented using the on-chip digital circuit.

[0071] In some specific embodiments, the analog-to-digital conversion module determines the first temperature value through the voltage signal and the original reference voltage of the temperature sensor, as shown below:

[0072] Two PNP transistors biased at a current ratio of p:1, the difference between their base and collector voltages can produce a voltage ΔV that is positively correlated with temperature. BE Multiply this voltage by a suitable multiple α to obtain αΔV BE , the ratio of this value to the reference voltage μ is linearly related to temperature.

[0073]

[0074] After μ is digitized by an analog-to-digital converter, a linear adjustment is performed to obtain the first temperature value Temp1:

[0075] Temp1=A·μ+B

[0076] In the formula, A is generally around 600, and B is generally around -273.

[0077] The instrument amplifier is used to determine a second temperature value through the voltage signal.

[0078] In the embodiment of the present disclosure, the instrument amplifier is used to connect to a high-precision source meter to measure the AΔV after being amplified by the on-chip instrument amplifier through the high-precision source meter outside the temperature sensor chip. BE , the measurement needs to measure AΔV of p+1 cycles BE , and take the average of the results. BE The linearity between the chip and temperature is high, which can eliminate the influence of non-ideal characteristics on AΔV BE After the influence of BE The voltage value can accurately reflect the temperature value of the chip at this time, and obtain the second temperature value Temp2 of the chip.

[0079]

[0080] After obtaining the first temperature value Temp1 and the second temperature value Temp2, the original reference voltage V ref1 Calibrate and get the target reference voltage V ref2 .

[0081] After obtaining the target reference voltage V ref2 After that, the analog-to-digital conversion module ADC can be based on the target reference voltage V ref2 The third temperature value obtained by quantization.

[0082] Corresponding to the above implementation of the temperature sensor for rapid calibration, a temperature sensor calibration method is provided in this embodiment. The method is implemented based on the temperature sensor for rapid calibration described in the above embodiment. The steps of the calibration method include:

[0083] Step S101, obtaining a first temperature value through an instrument amplifier.

[0084] Step S102, obtaining a second temperature value quantized by an analog-to-digital converter.

[0085] Step S103: adjusting a reference voltage of the temperature sensor from an original reference voltage to a target reference voltage according to a temperature difference between the first temperature value and the second temperature value.

[0086] Step S104 , obtaining a third temperature value quantized by the analog-to-digital converter based on the target reference voltage.

[0087] In the embodiment of the present disclosure, a high-precision source meter outside the sensor chip is used to measure the AΔV after being amplified by the on-chip instrumentation amplifier. BE , the measurement needs to measure AΔV of p+1 cycles BE , and take the average of the results. BE The linearity between the chip and temperature is high, which can eliminate the influence of non-ideal characteristics on AΔV BE After the influence of BE The voltage value can accurately reflect the temperature value of the chip at this time, and obtain the actual temperature value Temp2 of the chip. The second step is to measure the temperature value Temp1 inside the chip after quantization by ADC. Since the time interval between the first step and the second step is only about a few hundred milliseconds, the temperature of the chip can be considered to remain unchanged during this period of time. At this time, the reference voltage Vref1 on the chip is not calibrated, so the temperature value Temp1 obtained is an erroneous temperature value and cannot reflect the actual temperature of the chip at this time. The reference voltage adjustment value is obtained based on the difference between Temp1 and Temp2. ​​The third step is to adjust the reference voltage to obtain the reference voltage V ref2, so that the temperature value quantized by ADC at this time is Temp2.

[0088]

[0089] In the above formula, Temp2 is the actual chip temperature value measured in the first step, Temp1 is the temperature value quantized by ADC in the second step, and V ref2 is the uncalibrated reference voltage, V ref1 is the calibrated reference voltage.

[0090] The temperature sensor for rapid calibration provided by the above-mentioned embodiment of the present disclosure and the calibration method of the temperature sensor provided by the embodiment of the present disclosure are based on the same inventive concept and have the same beneficial effects as the method adopted, run or implemented by the application program stored therein.

[0091] The present invention also provides a specific embodiment, as shown below:

[0092] Figure 4 AΔV BE Schematic diagram of temperature change. Since the circuit uses dynamic component matching technology, this technology can reduce circuit offset. It can be considered that AΔV in each chip BE The linear relationship with temperature is consistent.

[0093] Figure 2 The following is the circuit diagram of the temperature sensor. The temperature sensor circuit can be divided into bias circuit, temperature sensing circuit, two-order incremental Sigma Delta ADC, instrument amplifier, and digital downsampling filter. These five parts are integrated in the chip. The output of the instrument amplifier leads to two pins, which can be used for high-precision source meter measurement A△VBE outside the chip during calibration. The current source current ratio of the bias circuit is p:1, and the bias current on Q2 is p:1 with the bias current on Q1, thus forming a voltage △V on the resistor Rb. BE1 , thus forming a bias current that is positively correlated with temperature. In order to reduce the temperature measurement error caused by the current mirror mismatch, the current mirror in the bias circuit adopts the dynamic element matching (DEM) technology. After using the DEM technology, the bias circuit has a total of p+1 groups of unit current sources. Each current source serves as the bias current of Q1 in one cycle, and the other p groups of unit current sources serve as the bias current of Q2. After p+1 cycles, a cycle is formed. Considering the offset of the current mirror tube, a total of p+1 groups of bias currents are formed. The p+1 groups of bias currents are averaged to eliminate the first-order error. At the same time, the op amp in the bias circuit uses chopping technology, which can eliminate the temperature error caused by the offset of the op amp. A compensation resistor with a resistance of Rb / p is connected in series to the base of Q2, and the voltage formed on Rb is:

[0094]

[0095] Among them, β is the current amplification factor of the transistor, and the bias current formed is:

[0096]

[0097] This current can be used to compensate for the temperature measurement error caused by the limited current gain β of the transistor in the temperature sensing circuit.

[0098] The bias current ratio of the two PNP transistors in the temperature sensing circuit is p:1. The bias current on Q4 and the bias current on Q3 are also p:1. The base-collector voltage formed on Q3 and Q4 is V BE1 With V BE2 , V BE2 With V BE1 The voltage difference is the PTAT voltage ΔV BE The voltage has a good linear relationship with the temperature, so it can be used for temperature measurement. The temperature sensing circuit also uses DEM technology, which can eliminate the ΔV caused by the misalignment of the current mirror tube. BE error.

[0099] The ADC uses a two-order incremental Sigma Delta ADC. Due to oversampling and noise shaping techniques, the Sigma Delta ADC can achieve a higher effective number of bits to meet the quantization accuracy requirements of temperature information. The downsampling filter and calibration algorithm of the Sigma Delta ADC can be partially implemented using the on-chip digital circuit.

[0100] The temperature sensor quantization scheme is as follows: two PNP transistors biased at a current ratio of p:1, the difference between their base and collector voltages can generate a voltage △VBE that is positively correlated with temperature. Multiplying this voltage by a suitable multiple α, we get α△VBE, the ratio of this value to the reference voltage μ is linearly related to temperature.

[0101]

[0102] After μ is digitized by an analog-to-digital converter, a linear adjustment is performed to obtain the temperature output:

[0103] D out =A·μ+B

[0104] In the formula, A is generally around 600, and B is generally around -273.

[0105] The traditional calibration method requires the chip to be placed in a stable and accurate ambient temperature. It usually takes more than ten minutes for the chip to reach the same temperature as the environment. After the chip temperature stabilizes, the reference voltage V is obtained by calibrating the high-precision reference voltage on the chip. ref, trim, and the following formula is satisfied, the calibration is completed. In the following formula, Temp is the ambient temperature, and A and B can be obtained by linear fitting of the test data of small batch chips at different temperature values.

[0106]

[0107] In this design, the chip temperature Temp is directly measured, and then the chip reference voltage is calibrated to obtain the reference voltage Vref,trim, thereby completing the temperature calibration. On the one hand, this method does not require a more accurate ambient temperature, which can reduce the test cost. On the other hand, it does not require a long calibration time, which improves the chip production efficiency. The temperature Temp can be measured by a high-precision source meter after the instrument amplifier amplifies the AΔV BE Because the temperature sensing circuit uses DEM technology, the measurement of AΔV BE p+1 periods should be measured and the average value should be taken.

[0108] The instrumentation amplifier uses a classic three-op-amp instrumentation amplifier with programmable gain to make the amplification factor of the instrumentation amplifier more accurate, and the use of chopping modulation technology can reduce low-frequency noise and offset voltage.

[0109] Figure 5 This is the temperature calibration flow chart. During calibration, the ambient temperature should be kept relatively stable. The ambient temperature does not need to be too accurate. The first step is to use an off-chip high-precision source meter to measure AΔV after being amplified by the on-chip instrumentation amplifier. BE , the measurement needs to measure AΔV of p+1 cycles BE , and take the average of the results. BE The linearity between the chip and temperature is high, which can eliminate the influence of non-ideal characteristics on AΔV BE After the influence of BE The voltage value can accurately reflect the temperature value of the chip at this time, and obtain the actual temperature value Temp2 of the chip. The second step is to measure the temperature value Temp1 inside the chip after quantization by ADC. Since the time interval between the first step and the second step is only about a few hundred milliseconds, the temperature of the chip can be considered to remain unchanged during this period of time. At this time, the reference voltage Vref1 on the chip has not been calibrated, so the obtained temperature value Temp1 is an erroneous temperature value and cannot reflect the actual temperature of the chip at this time. The reference voltage adjustment value is obtained based on the difference between Temp1 and Temp2. ​​The third step is to obtain the reference voltage Vref2 by adjusting the reference voltage, so that the temperature value quantized by ADC at this time is Temp2.

[0110]

[0111] In the above formula, Temp2 is the actual chip temperature value measured in the first step, Temp1 is the temperature value quantized by ADC in the second step, and Vref1 is the uncalibrated reference voltage, V ref2 is the calibrated reference voltage.

[0112] The disclosed embodiment realizes the voltage difference ΔV by building an instrument amplifier in the sensor chip. BE Amplify A times, the gain of the instrument amplifier is programmable to achieve accurate amplification function. BE The voltage value can be measured by an off-chip high-precision source meter. Since the temperature sensing circuit uses dynamic component matching technology, the measured AΔV BE Basically corresponding to the temperature, according to AΔV BE The value of can be used to get the temperature of the chip at this time. The temperature value obtained by the chip and the actual temperature value of the chip measured in the previous step can be used to get the reference voltage calibration value. Then the reference voltage is adjusted according to the reference voltage calibration value to complete the calibration. This calibration method can complete the chip calibration in just a few seconds, which greatly improves the chip production efficiency.

[0113] The present disclosure also provides a computer device to perform the temperature sensor calibration method. Figure 6 , which shows a schematic diagram of a computer device provided by some embodiments of the present disclosure. Figure 6 As shown, the computer device 6 includes: a processor 600, a memory 601, a bus 602 and a communication interface 603, wherein the processor 600, the communication interface 603 and the memory 601 are connected via the bus 602; the memory 601 stores a computer program that can be run on the processor 600, and when the processor 600 runs the computer program, the calibration method of the temperature sensor provided in the aforementioned embodiment of the present disclosure is executed.

[0114] The memory 601 may include a high-speed random access memory (RAM), and may also include a non-volatile memory (non-volatile memory), such as at least one disk storage. The communication connection between the system network element and at least one other network element is realized through at least one communication interface 603 (which may be wired or wireless), and the Internet, wide area network, local area network, metropolitan area network, etc. may be used.

[0115] The bus 602 may be an ISA bus, a PCI bus, or an EISA bus, etc. The bus may be divided into an address bus, a data bus, a control bus, etc. The memory 601 is used to store programs, and the processor 600 executes the programs after receiving the execution instruction. The temperature sensor calibration method disclosed in the above embodiment may be applied to the processor 600, or implemented by the processor 600.

[0116] The processor 600 may be an integrated circuit chip with signal processing capabilities. In the implementation process, each step of the above method can be completed by the hardware integrated logic circuit in the processor 600 or the instruction in the form of software. The above processor 600 can be a general-purpose processor, including a central processing unit (CPU), a network processor (NP), etc.; it can also be a digital signal processor (DSP), an application-specific integrated circuit (ASIC), a field-programmable gate array (FPGA) or other programmable logic devices, discrete gates or transistor logic devices, discrete hardware components. The methods, steps and logic block diagrams disclosed in the embodiments of the present disclosure can be implemented or executed. The general-purpose processor can be a microprocessor or the processor can also be any conventional processor. The steps of the method disclosed in conjunction with the embodiments of the present disclosure can be directly embodied as a hardware decoding processor to be executed, or a combination of hardware and software modules in the decoding processor can be executed. The software module can be located in a mature storage medium in the field such as a random access memory, a flash memory, a read-only memory, a programmable read-only memory or an electrically erasable programmable memory, a register, etc. The storage medium is located in the memory 601, and the processor 600 reads the information in the memory 601 and completes the steps of the above method in combination with its hardware.

[0117] The computer device provided in the embodiment of the present disclosure and the calibration method of the temperature sensor provided in the embodiment of the present disclosure are based on the same inventive concept and have the same beneficial effects as the methods adopted, run or implemented therein.

[0118] The present disclosure also provides a computer-readable storage medium corresponding to the temperature sensor calibration method provided in the above embodiment. Figure 7 The computer-readable storage medium shown is a CD 30 on which a computer program (ie, a program product) is stored. When the computer program is run by a processor, the temperature sensor calibration method provided in any of the aforementioned embodiments is executed.

[0119] It should be noted that examples of the computer-readable storage medium may also include, but are not limited to, phase change memory (PRAM), static random access memory (SRAM), dynamic random access memory (DRAM), other types of random access memory (RAM), read-only memory (ROM), electrically erasable programmable read-only memory (EEPROM), flash memory or other optical or magnetic storage media, which are not listed here one by one.

[0120] The computer-readable storage medium provided in the above-mentioned embodiment of the present disclosure and the temperature sensor calibration method provided in the embodiment of the present disclosure are based on the same inventive concept, and have the same beneficial effects as the method adopted, run or implemented by the application program stored therein.

[0121] It should be noted that:

[0122] In the description provided herein, a large number of specific details are described. However, it is understood that the embodiments of the present disclosure can be practiced without these specific details. In some instances, well-known structures and technologies are not shown in detail so as not to obscure the understanding of this description.

[0123] Similarly, it should be understood that in order to streamline the present disclosure and aid in understanding one or more of the various inventive aspects, in the above description of the exemplary embodiments of the present disclosure, the various features of the present disclosure are sometimes grouped together into a single embodiment, figure, or description thereof. However, the disclosed method should not be interpreted as reflecting the following schematic diagram: the claimed disclosure requires more features than the features explicitly recited in each claim. More specifically, as reflected in the claims below, the inventive aspects lie in less than all the features of the single embodiment disclosed above. Therefore, the claims that follow the specific embodiment are hereby expressly incorporated into the specific embodiment, with each claim itself serving as a separate embodiment of the present disclosure.

[0124] In addition, those skilled in the art will appreciate that, although some embodiments described herein include certain features included in other embodiments but not other features, the combination of features of different embodiments is meant to be within the scope of this disclosure and form different embodiments. For example, in the claims below, any one of the claimed embodiments may be used in any combination.

[0125] The above is only a preferred specific implementation of the present disclosure, but the protection scope of the present disclosure is not limited thereto. Any changes or substitutions that can be easily thought of by any technician familiar with the technical field within the technical scope disclosed in the present disclosure should be included in the protection scope of the present disclosure. Therefore, the protection scope of the present disclosure should be based on the protection scope of the claims.

Claims

1. A temperature sensor for rapid calibration, characterized in that: The temperature sensor includes a bias module, a temperature sensing module, an analog-to-digital conversion module and an instrument amplifier: A bias module, used for providing a bias current for the temperature sensing module; a temperature sensing module, used for determining a first VBE voltage and a second VBE voltage according to the bias current, generating a voltage signal positively correlated with temperature through a VBE voltage difference between the first VBE voltage and the second VBE voltage, and transmitting the voltage signal to an analog-to-digital conversion module and an instrument amplifier respectively; The analog-to-digital conversion module is used to determine a first temperature value through the voltage signal and an original reference voltage of the temperature sensor; The instrument amplifier is used to determine a second temperature value through the voltage signal; The temperature difference between the first temperature value and the second temperature value is used to calibrate the original reference voltage to obtain a target reference voltage.

2. The temperature sensor according to claim 1, characterized in that: The bias module includes a first PNP transistor and a second PNP transistor; The base and collector of the first PNP transistor are connected via a first node, and the emitter of the first PNP transistor is connected to the positive input terminal of the operational amplifier via a first resistor; The base of the second PNP transistor is connected to the second node through the second resistor, the collector of the second PNP transistor is connected to the second node, and the second node is connected to the first node; the emitter of the second PNP transistor is connected to the negative input terminal of the operational amplifier; and the output terminal of the operational amplifier is connected to the temperature sensing module.

3. The temperature sensor according to claim 2, characterized in that: The emitter of the first PNP transistor is connected to the first terminal of the first DEM module, and the emitter of the second PNP transistor is connected to the second terminal of the first DEM module.

4. The temperature sensor according to claim 3, characterized in that: The positive input terminal of the operational amplifier is connected to the first resistor through a first chopping module, and the negative input terminal of the operational amplifier is connected to the emitter of the second PNP transistor through the first chopping module.

5. The temperature sensor according to claim 2, characterized in that: The temperature sensing module includes a third PNP transistor and a fourth PNP transistor; The base and collector of the third PNP transistor are connected via a third node, and the emitter of the third PNP transistor is connected to the output terminal of the operational amplifier; The base and collector of the fourth PNP transistor are connected via a fourth node, the emitter of the fourth PNP transistor is connected to the output end of the operational amplifier, and the fourth node is connected to the third node.

6. The temperature sensor according to claim 5, characterized in that: The emitter of the third PNP transistor is connected to the output end of the operational amplifier through the first end of the second DEM module; the emitter of the fourth PNP transistor is connected to the output end of the operational amplifier through the second end of the second DEM module.

7. A method for calibrating a temperature sensor, characterized in that: The method is implemented based on the temperature sensor for rapid calibration according to any one of claims 1 to 6; the method comprises: Acquire a first temperature value through an instrumentation amplifier; Obtaining a second temperature value quantized by an analog-to-digital converter; According to the temperature difference between the first temperature value and the second temperature value, adjusting the reference voltage of the temperature sensor from the original reference voltage to the target reference voltage; A third temperature value quantized by the analog-to-digital converter based on the target reference voltage is obtained.

8. A temperature sensor calibration device, characterized in that: The device comprises: A first temperature value acquisition module, used for acquiring a first temperature value through an instrument amplifier; A second temperature value acquisition module, used to acquire a second temperature value quantized by the analog-to-digital converter; A reference voltage adjustment module, used for adjusting a reference voltage of the temperature sensor from an original reference voltage to a target reference voltage according to a temperature difference between the first temperature value and the second temperature value; The third temperature value acquisition module is used to acquire a third temperature value quantized by the analog-to-digital converter based on the target reference voltage.

9. A computer device, characterized in that: include: A memory and a processor, wherein the memory and the processor are communicatively connected to each other, the memory stores computer instructions, and the processor executes the temperature sensor calibration method according to claim 7 by executing the computer instructions.

10. A computer-readable storage medium, characterized in that: The computer-readable storage medium stores computer instructions, and the computer instructions are used to enable a computer to execute the temperature sensor calibration method according to claim 7.

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