Method for testing high-power semiconductor laser bar

Abstract

The invention provides a method for testing a high-power semiconductor laser bar, and relates to the technical field of semiconductor lasers. The test method comprises the following steps: depositing a thin In film on the N surface of a high-power semiconductor laser bar, baking at high temperature, bonding the high-power semiconductor laser bar and a bottom plate into a whole by utilizing the characteristic of low melting point of In, enabling the high-power semiconductor laser bar to be in full contact with the bottom plate, and then forming a power-on test through a test power supply. The method solves the problem that the high-power semiconductor laser bar can only be tested after being packaged into a module, the method is simple to operate, the aging of the high-power semiconductor laser bar can be shortened by more than 50%, the material waste caused by unqualified test is avoided, and the manufacturing cost is reduced.

Description

Technical Field

[0001] The invention relates to the technical field of semiconductor lasers, in particular to a method for testing high-power semiconductor laser bars. Background Art

[0002] A high-power semiconductor laser is a device that uses semiconductor materials as working materials to generate lasers. It has the characteristics of high power, high brightness, high reliability and long life. High-power semiconductor lasers are usually used in military, medical, industrial processing, communications and other fields, and play an important role in these fields. With the advancement of technology, high-power semiconductor lasers are increasingly used in fiber laser and solid-state laser pump sources. Its high efficiency and long life make its application prospects in industrial processing and scientific research very broad. In the future, with the further development of technology, high-power semiconductor lasers will play an important role in more fields. High-power semiconductor laser bar is a device manufactured with advanced semiconductor technology. It has the characteristics of high power, high stability and long life. It is widely used in various industrial and scientific research fields.

[0003] High-power semiconductor laser bars usually adopt the brazing process to provide stable laser output. For example, the 808nm wavelength semiconductor laser bar adopts the HCS-mount brazing package, which can provide 250W laser power output and is suitable for industrial-grade laser applications. In addition, under the condition of 3% duty cycle, the output wavelength of the 808nm quasi-continuous wave laser diode array is controlled within the range of 808nm±1nm, the half-height full width is less than 3.5nm, and the peak power exceeds 11kW, which is suitable for various application scenarios. High-power semiconductor laser bars usually adopt InGaAs and AlGaAs epitaxial material systems, and the photoelectric conversion efficiency and output power are improved by designing and making conical structures. With the continuous advancement of laser technology, high-power semiconductor laser bars are more and more widely used in industries, scientific research and medical fields. With its high power, high stability and long life, high-power semiconductor laser bars have shown broad application prospects in many fields.

[0004] The existing method for screening high-power semiconductor laser bars requires first packaging the bars into modules and then performing aging screening on the modules. This testing method cannot determine the performance of the bars before packaging, so unqualified bars are also packaged, resulting in unnecessary waste and increased costs. Summary of the invention

[0005] In view of the above problems, the present application provides a method for testing high-power semiconductor laser bars, which solves the problem that high-power semiconductor laser bars need to be packaged into modules before they can be tested, thereby reducing manufacturing costs.

[0006] The technical solution adopted by the present invention to solve the technical problem is:

[0007] A method for testing a high-power semiconductor laser bar comprises the following steps:

[0008] S1, preparation of high power semiconductor laser bars;

[0009] S2, depositing an In film on the N-face of the high-power semiconductor laser bar;

[0010] S3, placing the high-power semiconductor laser bar on the base plate and bonding the In film to the base plate;

[0011] S4, heating, after the In film is melted, taking out the bottom plate with the high-power semiconductor laser bar, and cooling naturally until the In film is re-solidified;

[0012] S5, connecting the P surface of the high-power semiconductor laser bar to the positive electrode of the test power supply, connecting the bottom plate to the negative electrode of the test power supply, and using the test equipment to test the high-power semiconductor laser bar;

[0013] S6, heating, after the In film is softened, the high-power semiconductor laser bar is removed from the base plate, and the residual In on the base plate and the N surface of the high-power semiconductor laser bar is removed.

[0014] Furthermore, the high-power semiconductor laser bar prepared in step S1 includes a P-surface, an epitaxial layer, a substrate and an N-surface in sequence.

[0015] Furthermore, in step S2, the In film overflowing from around the high-power semiconductor laser bar needs to be scraped off.

[0016] Furthermore, in step S2, the deposition thickness of the In film is 0.1-0.4 μm.

[0017] Furthermore, in step S4, the heating temperature is 150-180° C., and the heating time is 10-15 minutes.

[0018] Furthermore, in step S4, the cooling time is 5-10 minutes.

[0019] Furthermore, in step S4, the bottom plate on which the high-power semiconductor laser bars are placed is heated by an oven.

[0020] Furthermore, in step S6, the heating temperature is 180-220° C., and the heating time is 1-2 minutes.

[0021] Furthermore, in step S6, heating is performed using a heating platform.

[0022] Further, in step S5, the test parameters include voltage, output power and wavelength.

[0023] The beneficial effects of the present invention are:

[0024] The embodiment of the present application provides a method for testing a high-power semiconductor laser bar, which deposits a thin In film on the N surface of the high-power semiconductor laser bar, and then bakes it at high temperature, using the low melting point of In to fully contact the high-power semiconductor laser bar with the base plate, and then conducts a power-on test through a test power supply. This method solves the problem that high-power semiconductor laser bars need to be packaged into modules before they can be tested. This method is simple to operate, and the aging time of high-power semiconductor laser bars can be shortened by more than 50%. There will be no waste of materials due to unqualified tests, which reduces manufacturing costs. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1 This is a side cross-sectional view of a high-power semiconductor laser bar during testing.

[0026] In the figure: 11, substrate; 12, epitaxial layer; 13, P-side; 14, N-side; 2, In film; 3, bottom plate; 4, test power supply; 41, positive electrode; 42, negative electrode. DETAILED DESCRIPTION

[0027] In order to enable those skilled in the art to better understand the technical solutions in the present application, the technical solutions in the embodiments of the present application will be described in detail below in conjunction with the drawings in the embodiments of the present application, and the described embodiments are only part of the embodiments of the present application, not all of the embodiments. All other embodiments obtained by those skilled in the art without creative work on the basis of the embodiments of the present application shall belong to the protection scope of the present application.

[0028] A method for testing a high-power semiconductor laser bar comprises the following steps:

[0029] S1, preparing a high-power semiconductor laser bar by conventional methods. The high-power semiconductor laser bar includes a P surface 13, an epitaxial layer 12, a substrate 11 and an N surface 14 from top to bottom.

[0030] S2, depositing an In film 2 on the N surface 14 of the high-power semiconductor laser bar, and using a blade to scrape off the In film 2 overflowing around the high-power semiconductor laser bar to avoid affecting the light-emitting area.

[0031] The thickness of the In film 2 is 0.1-0.4 μm. As a specific implementation, the thickness of the In film 2 in this embodiment is 0.2 μm.

[0032] S3, placing the high-power semiconductor laser bar on the base plate 3, and making the In film 2 and the base plate 3 fit together.

[0033] As a specific implementation manner, the bottom plate 3 described in this embodiment is made of metal material.

[0034] S4, heating is performed by a heating device at a temperature of 150-180°C for 10-15 minutes. After the In film 2 is melted, the bottom plate 3 with the high-power semiconductor laser bar is taken out of the heating device and cooled naturally until the In film 2 is re-solidified. Preferably, the cooling time is 5-10 minutes.

[0035] By providing the In film 2 and melting the In film 2 by heating, on the one hand, the high-power semiconductor laser bar can be fully in contact with the base plate 3 through the In film 2, thereby improving the conductivity; on the other hand, it can play a bonding role, thereby connecting the high-power semiconductor laser bar and the base plate 3 as a whole.

[0036] As a specific implementation, the heating device described in this embodiment is an oven.

[0037] As a specific implementation, in step S4 of this embodiment, the heating temperature of the heating device is 160° C., and the heating time is 15 minutes.

[0038] S5, connect the P surface 13 of the high power semiconductor laser bar to the positive electrode 41 of the test power supply 4, and connect the bottom plate 3 to the negative electrode 42 of the test power supply 4, so that the power supply is turned on. Figure 1 The high-power semiconductor laser bar emits light from the side, and the high-power semiconductor laser bar test results are obtained by testing using a test device. The test results include the voltage, output power and wavelength of the high-power semiconductor laser bar;

[0039] S6, placing the tested base plate 3 on a heating table for secondary heating, and after the In film 2 softens, removing the high-power semiconductor laser bar from the base plate 3 by a tool, and using a blade to remove the residual In on the base plate 3 and the N surface 14 of the high-power semiconductor laser bar.

[0040] As a specific implementation, in step S6 of this embodiment, the heating temperature of the heating stage is 180-220° C., and the heating time is 1-2 minutes.

[0041] According to the test results, those that meet the standards are qualified high-power semiconductor laser bars and can proceed with subsequent packaging operations normally; those that do not meet the standards are unqualified products.

[0042] Other embodiments obtained by those skilled in the art by combining, splitting, reorganizing, etc. the embodiments of the present application on the basis of the embodiments provided in the present application do not exceed the protection scope of the present application.

[0043] The above specific implementation methods have detailed the purpose, technical solutions and beneficial effects of the embodiments of the present application. The above are only specific implementation methods of the embodiments of the present application and are not used to limit the protection scope of the embodiments of the present application. That is, any modifications, equivalent substitutions, improvements, etc. made on the basis of the embodiments of the present application should be included in the protection scope of the embodiments of the present application.

Claims

1. A method for testing a high power semiconductor laser bar, characterized in that: The following steps are included: S1, preparation of high power semiconductor laser bars; S2, depositing an In film (2) on the N surface (14) of the high power semiconductor laser bar; S3, placing the high-power semiconductor laser bar on the base plate (3), and making the In film (2) fit the base plate (3); S4, heating, and after the In film (2) is melted, taking out the base plate (3) on which the high-power semiconductor laser bar is placed, and cooling naturally until the In film (2) is re-solidified; S5, connecting the P surface (13) of the high-power semiconductor laser bar to the positive electrode (41) of the test power supply (4), connecting the bottom plate (3) to the negative electrode (42) of the test power supply (4), and using the test equipment to test the high-power semiconductor laser bar; S6, heating, after the In film (2) is softened, removing the high-power semiconductor laser bar from the base plate (3), and removing the residual In on the base plate (3) and the N surface (14) of the high-power semiconductor laser bar.

2. A method for testing a high power semiconductor laser bar according to claim 1, characterized in that: The high-power semiconductor laser bar prepared in step S1 includes a P surface (13), an epitaxial layer (12), a substrate (11) and an N surface (14) in sequence.

3. The method for testing a high power semiconductor laser bar according to claim 1, characterized in that: In step S2, the In film (2) overflowing from the periphery of the high power semiconductor laser bar needs to be scraped off.

4. The method for testing a high power semiconductor laser bar according to claim 1, characterized in that: In step S2, the deposition thickness of the In film (2) is 0.1-0.4 μm.

5. The method for testing a high power semiconductor laser bar according to claim 1, characterized in that: In step S4, the heating temperature is 150-180° C. and the heating time is 10-15 minutes.

6. The method for testing a high power semiconductor laser bar according to claim 1, characterized in that: In step S4, the cooling time is 5-10 minutes.

7. The method for testing a high power semiconductor laser bar according to claim 1, characterized in that: In step S4, the bottom plate (3) on which the high-power semiconductor laser bars are placed is heated by an oven.

8. The method for testing a high power semiconductor laser bar according to claim 1, characterized in that: In step S6, the heating temperature is 180-220° C., and the heating time is 1-2 minutes.

9. The method for testing a high power semiconductor laser bar according to claim 1, characterized in that: In step S6, heating is performed using a heating stage.

10. The method for testing a high power semiconductor laser bar according to claim 1, characterized in that: In step S5, the test parameters include voltage, output power and wavelength.

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