High-precision trap state distributed scanning system for ceramic dielectric

Abstract

The invention belongs to the technical field of novel dielectric characterization, and particularly discloses a high-precision trap state distributed scanning system for a ceramic dielectric. The system comprises a constant charge trap excitation source and a trap state measurement control system, the trap state measurement control system comprises a plate electrode and a needle electrode, and the constant charge trap excitation source is used for exciting the needle electrode to carry out dielectric barrier discharge on the surface of a dielectric to be measured during system measurement so as to generate de-trapping current; the trap state measurement control system is used for controlling the needle electrode to move according to a preset path so as to discharge each scanning position point on the surface of the dielectric medium to be measured one by one, and synchronously measuring de-trapping current data of each scanning position point; and based on the de-trapping current data of each scanning position point, generating a two-dimensional trap state distribution diagram of the to-be-measured dielectric surface. According to the invention, the measurement of the trap state space distribution on the surface of the ceramic dielectric can be effectively realized, and the measurement effects of high efficiency, accuracy, controllability and low cost are achieved.

Description

Technical Field

[0001] The present application belongs to the field of novel dielectric characterization technology, and more specifically, relates to a high-precision trap state distributed scanning system for ceramic dielectrics. Background Art

[0002] The trap state is a mesoscopic state between the macroscopic and microscopic. Among them, deep and shallow traps exist in dielectric materials, manifested as different local energy levels, which can capture and release charge carriers, thus significantly affecting the charge distribution and dielectric properties of the dielectric. Measuring the distribution of trap states on the surface of dielectric materials is crucial to understanding the charge capture, migration and release mechanisms. By characterizing the distribution of trap states on the surface of materials, the interfacial / surface properties of dielectrics and their impact on the overall electrical properties can be deeply analyzed, which provides a solid scientific basis for the design and optimization of dielectric materials.

[0003] At present, the existing surface trap state measurement technology of ceramic dielectric materials mainly focuses on uniform measurement at the macroscopic level. Although it can reveal the relationship between the trap state density and energy on the material surface, it cannot effectively capture the specific spatial distribution of the material trap states at different positions. This limitation makes it difficult to precisely control the electrical properties of the material, especially when targeted optimization of specific properties is required. This also limits the in-depth understanding of the complex electrical behavior inside the material.

[0004] Therefore, how to effectively measure the spatial distribution of trap states on the surface of ceramic dielectrics has become a technical problem that needs to be solved urgently in the industry. Summary of the invention

[0005] In view of the defects of the prior art, the purpose of this application is to achieve effective measurement of the spatial distribution of trap states on the surface of ceramic dielectrics, aiming to solve the problem that the prior art mainly focuses on uniform measurement at the macroscopic level of ceramic dielectrics and cannot effectively capture the specific spatial distribution of material trap states at different positions.

[0006] To achieve the above objectives, in a first aspect, the present application provides a high-precision trap state distributed scanning system for ceramic dielectrics, comprising: Constant charge trap excitation source and trap state measurement control system; The trap state measurement control system comprises a measurement electrode, and the measurement electrode comprises a flat electrode and a needle electrode; the needle electrode is vertically arranged above the flat electrode according to a preset interval; a side of the flat electrode facing the needle electrode is used to fix the dielectric to be measured, so that the dielectric to be measured is located directly below the needle electrode; The positive electrode of the constant charge trap excitation source is connected to the needle electrode, and the negative electrode is connected to the plate electrode, and is used to excite the needle electrode to perform dielectric barrier discharge on the surface of the dielectric to be measured to generate a trapping current when the system is measuring; The trap state measurement control system is used to control the needle electrode to move along a preset path to discharge each scanning position point on the surface of the dielectric to be tested one by one, and synchronously measure the trap current data of each scanning position point, so as to generate a two-dimensional trap state distribution map of the surface of the dielectric to be tested based on the trap current data of each scanning position point.

[0007] Optionally, the trap state measurement control system comprises a trap state measurement system and a control calculation system, and the trap state measurement system comprises a test chamber, a needle electrode moving platform and an electrical measurement device; The needle electrode moving platform is fixed inside the test chamber; a needle electrode mounting portion is provided on the needle electrode moving platform for fixing the needle electrode; The needle electrode moving platform is connected to the control computing system and is used to control the needle electrode to move above the surface of the dielectric to be tested along a preset path under the control of the control computing system; The electrical measuring device is connected to the measuring electrode and the control computing system respectively, and is used to measure the trapping current data and the discharge voltage data of each scanning position point, and transmit the trapping current data and the discharge voltage data of each scanning position point to the control computing system; The control and calculation system is used to generate a two-dimensional trap state distribution diagram of the surface of the dielectric to be tested by using the trap current data and the discharge voltage data of each of the scanning position points.

[0008] Optionally, an air inlet pipe is provided on the outer wall of the test chamber; the air inlet pipe is used to introduce a specified protective gas into the test chamber.

[0009] Optionally, the needle electrode moving platform is an XY dual-axis platform, and the XY dual-axis platform includes two linear slide modules on the X axis and one linear slide module on the Y axis; Wherein, each of the linear slide modules comprises a rolling screw, a linear guide and a slider, wherein the linear guide is used to support the slider and guide the slider to move; the slider is provided with a threaded through-hole so that the rolling screw can pass through the slider; a motor connecting plate and a coupling are installed at the end of each linear slide module, wherein the motor connecting plate is used to fix the servo motor, and the coupling is used to connect the servo motor and the rolling screw so as to convert the rotational motion of the servo motor into the linear motion of the slider; an encoder is provided on the shaft end of the servo motor, which rotates synchronously with the servo motor and is used to monitor the running status of the servo motor; Among them, the two linear slide modules on the X-axis are fixed by guide rods and couplings, the linear slide module on the Y-axis is fixed on the sliders of the two linear slide modules on the X-axis, and the slider of the linear slide module on the Y-axis is fixedly connected to the needle electrode mounting part.

[0010] Optionally, the control computing system includes a servo driver, a controller and a measurement and control unit connected in sequence; The servo driver is connected to each servo motor and encoder on the XY dual-axis platform; the measurement and control unit is connected to the electrical measurement device in the trap state measurement and control system; The measurement and control unit is used to send control instructions to the controller; The controller is used to respond to the control instruction, control the servo driver to drive each servo motor on the XY dual-axis platform to operate, so as to control the needle electrode in the trap state measurement control system to move according to a preset path, and discharge each scanning position point on the surface of the dielectric to be measured one by one, and measure the trap current data and discharge voltage data of each scanning position point; The measurement and control unit is also used to analyze and process the trap current data and discharge voltage data of each scanning position point according to the isothermal current decay method to generate a two-dimensional trap state distribution map of the surface of the dielectric to be measured.

[0011] Optionally, the control computing system further comprises a switch module; a first input end of the switch module is connected to the positive electrode of the constant charge trap excitation source, an output end of the switch module is connected to the needle electrode, and a second input end of the switch module is connected to the controller; The controller is used to control the switch state of the switch module to control the discharge of the needle electrode.

[0012] Optionally, the constant charge trap excitation source includes a friction nanogenerator and a rotary motor; The rotating motor is connected to the linkage shaft of the friction nanogenerator through a coupling, so as to provide mechanical energy input to the friction nanogenerator; The friction nanogenerator comprises two symmetrically arranged independent rotating structures, each of which comprises a stator and a rotor; In each of the independent rotating structures, a layer of electrode film is attached to the surface of the stator facing the rotor, and the electrode film layer is evenly divided into a plurality of fan-shaped units, which are divided into two groups of inner and outer complementary electrode groups; wherein the inner electrode group is formed by radially arranging the fan-shaped units around the axis, and the inner and outer electrode groups are separated by fine grooves; The rotor comprises a plurality of fan-shaped blades, and the area of ​​the fan-shaped blades is the same as the area of ​​the fan-shaped unit; A polymer film layer is attached to the surface of the blades on the rotor facing the stator, which serves as a friction layer of the friction nanogenerator.

[0013] Optionally, the system further comprises: a mesoscopic regulation guidance system; The mesoscopic regulatory guidance system is used for: Obtaining a two-dimensional trap state distribution map of the surface of the dielectric to be tested; Based on the two-dimensional trap state distribution map, determining the trap state performance defects existing on the surface of the dielectric to be tested; According to the trap state performance defects, modification strategy information of the dielectric to be tested is output.

[0014] Optionally, the mesoscopic regulation guidance system is specifically used for: When it is determined that the trap state performance defect is that the density of the trap center in the shallow trap region exceeds a first threshold, outputting the modification strategy information is: adjusting the sintering time and temperature of the dielectric to be tested during the preparation process; Or, when it is determined that the trap state performance defect is that the area of ​​the shallow trap region is less than the second threshold, and the trap center density of the shallow trap region is less than the third threshold, the modification strategy information is output as: during the preparation process of the dielectric to be tested, the duration of plasma treatment of the surface of the dielectric to be tested is extended to the target duration.

[0015] In a second aspect, the present application provides a control method for a high-precision trap state distributed scanning system for ceramic dielectrics as described in any of the above, comprising: Controlling the needle electrode in the trap state measurement control system to move along a preset path, and during the movement, using the constant charge trap excitation source to excite the needle electrode to perform dielectric barrier discharge on the surface of the dielectric to be measured, so as to generate a trap current; Discharging each scanning position point on the surface of the dielectric to be tested one by one, and synchronously measuring the detrapping current data of each scanning position point; Based on the trap current data of each of the scanning position points, a two-dimensional trap state distribution map of the surface of the dielectric to be tested is generated.

[0016] In general, the above technical solutions conceived by this application have the following beneficial effects compared with the prior art: The present application provides a high-precision trap state distributed scanning system for ceramic dielectrics. By utilizing a constant charge trap excitation source to provide a stable excitation source and combining it with an automated control method, a single needle electrode is automatically moved and accurately scanned on the surface of the dielectric to be tested. The system can automatically perform scanning path planning, dielectric barrier discharge positioning, discharge control, and discharge data collection, and efficiently generate a two-dimensional trap state distribution map of the surface of the dielectric to be tested. The system can effectively measure the spatial distribution of trap states on the surface of ceramic dielectrics, has an efficient, accurate, controllable, and low-cost measurement effect, and is suitable for electrical property analysis and material modification on the surfaces of various ceramic dielectric materials. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 This is one of the structural schematic diagrams of the high-precision trap state distributed scanning system for ceramic dielectrics provided in the embodiments of the present application; Figure 2 is a schematic diagram of the structure of a constant charge trap excitation source provided in an embodiment of the present application; Figure 3 This is the second structural schematic diagram of the high-precision trap state distributed scanning system for ceramic dielectrics provided in the embodiment of the present application; Figure 4 is a schematic diagram of the structure of the needle electrode moving platform provided in an embodiment of the present application; Figure 5 This is the third structural schematic diagram of the high-precision trap state distributed scanning system for ceramic dielectrics provided in the embodiment of the present application; Figure 6 It is a schematic diagram of the execution flow of a high-precision trap state distributed scanning system for ceramic dielectrics provided in an embodiment of the present application; Figure 7 It is a schematic diagram of the process of the mesoscopic control technology of carbon ceramic resistors provided in the embodiment of the present application; Figure 8 It is a schematic diagram of the trap state test results of the unmodified FEP coating on the surface of the carbon ceramic resistor provided by the present application; Fig. 9 It is a schematic diagram of the trap state distribution on the surface of the FEP coating after the surface of the carbon ceramic resistor provided by the present application is modified; Fig.10 It is a flow chart of a control method of a high-precision trap-state distributed scanning system provided in an embodiment of the present application. DETAILED DESCRIPTION

[0018] In order to make the purpose, technical solution and advantages of the present application more clearly understood, the present application is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and are not used to limit the present application.

[0019] The terms "first" and "second" in the specification and claims of this application are used to distinguish different objects rather than to describe a specific order of objects. For example, a first threshold and a second threshold are used to distinguish different threshold information rather than to describe a specific order of thresholds.

[0020] In the embodiments of the present application, words such as "exemplary" or "for example" are used to indicate examples, illustrations or descriptions. Any embodiment or design described as "exemplary" or "for example" in the embodiments of the present application should not be interpreted as being more preferred or more advantageous than other embodiments or designs. Specifically, the use of words such as "exemplary" or "for example" is intended to present related concepts in a specific way.

[0021] In the description of the embodiments of the present application, unless otherwise specified, “plurality” means two or more than two. For example, a plurality of fan-shaped units refers to two or more than two fan-shaped units, etc.

[0022] The embodiments of the present application are described below in conjunction with the drawings in the embodiments of the present application.

[0023] Figure 1 is one of the structural schematic diagrams of the high-precision trap state distributed scanning system for ceramic dielectrics provided in the embodiments of the present application, such as Figure 1 As shown, including: Constant charge trap excitation source 1 and trap state measurement control system 2; The trap state measurement control system 2 includes a measurement electrode, which includes a flat plate electrode 211 and a needle electrode 212. The needle electrode 212 is vertically arranged above the flat plate electrode 211 according to a preset interval; the side of the flat plate electrode 211 facing the needle electrode 212 is used to fix the dielectric 3 to be measured, so that the dielectric 3 to be measured is located directly below the needle electrode 212; The positive electrode of the constant charge trap excitation source 1 is connected to the needle electrode 212, and the negative electrode is connected to the plate electrode 211, and is used to excite the needle electrode 212 to perform dielectric barrier discharge on the surface of the dielectric 3 to be measured during system measurement to generate a trapping current; The trap state measurement control system 2 is used to control the needle electrode 212 to move along a preset path so as to discharge each scanning position point on the surface of the dielectric 3 to be tested one by one, and synchronously measure the trap current data of each scanning position point, so as to generate a two-dimensional trap state distribution map of the surface of the dielectric 3 to be tested based on the trap current data of each scanning position point.

[0024] Specifically, the preset spacing described in the embodiment of the present application refers to the distance between the needle tip of the needle electrode and the surface of the dielectric to be measured, which can be specifically determined by the discharge characteristics of the dielectric to be measured. For example, for ceramic dielectrics, it can generally be 1 mm.

[0025] The preset path described in the embodiment of the present application refers to a needle electrode scanning path pre-set by a control program. Specifically, a serpentine scanning strategy can be adopted, that is, the route divided for the surface of the dielectric to be tested, the odd rows move from left to right, and the even rows move from right to left, so as to reduce extra travel and improve measurement efficiency.

[0026] In an embodiment of the present application, the trap state distributed scanning system may specifically include two major parts: a constant charge trap excitation source and a trap state measurement and control system. The constant charge trap excitation source is used to drive the dielectric barrier discharge on the surface of the dielectric to be tested, thereby stimulating the bound charges in the dielectric surface traps and generating a stable detrapping current.

[0027] Among them, in the trap state measurement control system, there are two types of measurement electrodes, a flat plate electrode and a needle electrode. The needle electrode is vertically arranged above the flat plate electrode at a preset interval. The dielectric to be measured is arranged on the side of the flat plate electrode facing the needle electrode during measurement, so that it is located directly below the needle electrode. In this way, the positive terminal of the constant charge trap excitation source is connected to the needle electrode, and the negative terminal is connected to the flat plate electrode to form an electrical circuit. When the constant charge trap excitation source generates electricity, the excitation needle electrode performs dielectric barrier discharge on the surface of the dielectric to be measured directly below it to generate a trapping current.

[0028] In the embodiment of the present application, the measuring needle electrode may adopt a high-precision Kelvin probe (radius of curvature ≤ 10 nm) to ensure micron-level measurement accuracy.

[0029] Furthermore, in an embodiment of the present application, the trap state measurement control system can control a single needle electrode to move along a preset path through an internal control program, so as to gradually and accurately locate and scan each scanning position point on the entire surface of the dielectric to be tested. During the scanning process, the needle electrode can synchronously discharge each scanning position point on the surface of the dielectric to be tested one by one, and the internal measurement device can synchronously and accurately collect and measure the trap current data of each scanning position point. Before measurement, the measurement system can specifically use a sampling frequency of 10kHz to avoid aliasing of multiple discharge current waveforms.

[0030] Ultimately, the trap state measurement and control system can analyze and image the trap current data at each scanning position to generate a two-dimensional trap state distribution map of the dielectric surface to be tested.

[0031] In the embodiments of the present application, only one needle electrode needs to be automatically controlled to scan and discharge the surface of the dielectric to be tested, and to collect data, thereby finally completing the imaging of the two-dimensional trap state distribution map on the surface of the dielectric to be tested. There is no need to use too many needle electrodes for fixed-point detection, which eliminates the tedious procedures of manufacturing needle electrode arrays and can also save a lot of manufacturing costs. The operation is simple and reliable.

[0032] The high-precision trap state distributed scanning system for ceramic dielectrics of the embodiment of the present application utilizes a constant charge trap excitation source to provide a stable excitation source, and combines it with an automated control method to automatically move and accurately scan a single needle electrode on the surface of the dielectric to be tested. It can automatically perform scanning path planning, dielectric barrier discharge positioning, discharge control, and discharge data collection, and efficiently generate a two-dimensional trap state distribution map of the surface of the dielectric to be tested. It can effectively realize the measurement of the spatial distribution of trap states on the surface of ceramic dielectrics, has an efficient, accurate, controllable, and low-cost measurement effect, and is suitable for electrical property analysis and material modification of various ceramic dielectric material surfaces.

[0033] Figure 2 is a schematic diagram of the structure of the constant charge trap excitation source provided in the embodiment of the present application, such as Figure 2 As shown, the constant charge trap excitation source 1 includes a friction nanogenerator 11 and a rotary motor 12; The rotating motor 12 is connected to the linkage rotating shaft 111 of the friction nanogenerator 11 through a coupling 121, and is used to provide mechanical energy input to the friction nanogenerator 11; The friction nanogenerator 11 includes two symmetrically arranged independent rotating structures 112, each of which includes a stator 1121 and a rotor 1122; In each independent rotating structure 112, a layer of electrode film is attached to the surface of the stator 1121 facing the rotor 1122, and the electrode film layer is evenly divided into a plurality of fan-shaped units, which are divided into two groups of inner and outer complementary electrode groups; wherein the inner electrode group is formed by radially arranging the fan-shaped units around the axis, and the inner and outer electrode groups are separated by fine grooves; The rotor 1122 includes a plurality of fan-shaped blades, and the area of ​​the fan-shaped blades is the same as the area of ​​the fan-shaped unit; A polymer film layer is attached to the blade surface of the rotor 1122 facing the stator, which serves as the friction layer of the friction nanogenerator.

[0034] Specifically, in an embodiment of the present application, a constant charge trap excitation source is composed of a friction nanogenerator and a rotary motor, which can generate high voltage and stable charge transfer, which is used to drive dielectric barrier discharge, stimulate bound charges in the surface traps of the dielectric to be tested, and generate stable detrapping current.

[0035] Further, in an embodiment of the present application, the rotating motor is connected to the linkage shaft of the friction nanogenerator through a coupling to provide mechanical energy input for the friction nanogenerator. The friction nanogenerator comprises two symmetrically arranged independent rotating structures, each consisting of a stator and a rotor. The stator is composed of a layer of thin film electrode material attached to an acrylic plate, and the electrode film layer can be evenly divided into 10 sectors, divided into two groups of inner and outer complementary electrode groups. The inner electrode group is formed by radially arranging the same sector-shaped units around the axis, and the inner and outer electrodes are separated by fine grooves, and the adjacent electrode groups are arranged complementary in structure. The rotor is composed of blades made of acrylic plate, and its area is the same as that of the corresponding inner electrode. The surface of the rotor blade is coated with a plasma-etched polymer film to form a nanostructure, which serves as the friction layer of the friction nanogenerator to increase the charge density and output voltage on the film surface.

[0036] Optionally, in an embodiment of the present application, the electrode material used for the electrode film layer of the stator can be selected from metals or metal alloys with excellent conductivity and wear resistance, wherein the metals include but are not limited to gold, silver, copper, aluminum, platinum, palladium, nickel, titanium, chromium, and manganese, and the alloys include but are not limited to aluminum alloys, copper alloys, lead alloys, magnesium alloys, titanium alloys, molybdenum alloys, beryllium alloys, manganese alloys, tin alloys, nickel alloys, zinc alloys, and gallium alloys.

[0037] Optionally, in an embodiment of the present application, the polymer film material used for the polymer film layer of the rotor can be a polymer with a high triboelectric effect, including but not limited to the following film materials: polydimethylsiloxane, polyethylene, polypropylene, polyvinylidene fluoride, polytetrafluoroethylene, polyvinyl chloride, polychloroprene, polyimide, polyformaldehyde, ethyl cellulose, polyamide, melamine formaldehyde, polycarbonate, polymethacrylate, phenolic resin, cellulose, polyisobutylene, polychloroether, cellulose acetate, polyethanol butyral, fiber sponge, ethylene glycol ester, styrene propylene copolymer, polystyrene, polyvinyl alcohol, polyvinyl alcohol, polybisphenol carbonate, polyester, polyethylene terephthalate, and its thickness is not less than 50μm.

[0038] Further, in an embodiment of the present application, two identical independent rotating structures are mounted on a linkage shaft in a vertically symmetrical manner, and the centers of the rotor and stator are aligned, the rotor is located inside, and the stator is located outside, and the rotor is connected to the motor shaft through a flange mounting journal. A sponge material buffer layer and a spring bracket are introduced between the rotor and the stator, in order to keep the friction layer on the rotor in close contact with the electrode on the stator, thereby improving the stability of charge transfer and electrical output. The electrodes on the two stators are connected in series with copper wires, and a pair of discharge electrodes are led out.

[0039] In the system of the embodiment of the present invention, the high voltage is provided by an independent friction nanomotor, which is designed as a sandwich structure and consists of two symmetrical rotating structures. Each structure consists of a stator and a rotor, a layer of copper electrode is laid on the upper surface of the stator, and the surface of the rotor is coated with an electronegative fluorinated ethylene propylene (FEP) film material. The rotor is composed of a group of 5 radially arranged fan-shaped units, and the central angle of each fan-shaped unit is 36°. The stator is composed of two complementary copper electrodes, which are separated by fine grooves. One group of electrodes is formed by radial arrangement of fan-shaped units connected to each other at one end, which is the same as the rotor structure. The external rotating motor drives the shaft to rotate the rotor wrapped with a friction electrification layer. During the rotation of the rotor, its surface contacts the stator copper electrode. Due to the friction electrification and electrostatic induction effects, a potential difference is generated on the two groups of copper electrodes, thereby generating a stable high voltage.

[0040] Figure 3 This is a second structural diagram of a high-precision trap state distributed scanning system for ceramic dielectrics provided in an embodiment of the present application. Based on the content of the above embodiment, as an optional embodiment, Figure 3 As shown, the trap state measurement control system 2 includes a trap state measurement system 21 and a control computing system 22, and the trap state measurement system 21 includes a test chamber 213, a needle electrode moving platform 214 and an electrical measurement device 215; The needle electrode moving platform 214 is fixed inside the test chamber 213; a needle electrode mounting portion 2147 is provided on the needle electrode moving platform 214 for fixing the needle electrode 212; The needle electrode moving platform 214 is connected to the control computing system 22 and is used to control the needle electrode 212 to move above the surface of the dielectric 3 to be tested along a preset path under the control of the control computing system 22; The electrical measuring device 215 is connected to the measuring electrode and the control computing system 22 respectively, and is used to measure the trapping current data and the discharge voltage data of each scanning position point, and transmit the trapping current data and the discharge voltage data of each scanning position point to the control computing system 22; The control and calculation system 22 is used to generate a two-dimensional trap state distribution diagram of the surface of the dielectric to be tested by using the trap current data and the discharge voltage data of each scanning position point.

[0041] Specifically, in an embodiment of the present application, the trap state measurement control system includes two major systems: a trap state measurement system and a control computing system. The trap state measurement system includes a test chamber, a needle electrode moving platform and an electrical measuring device. The needle electrode moving platform is a control platform for controlling the needle electrode to perform scanning discharge, which can be specifically implemented by a mechanical moving structure.

[0042] More specifically, the needle electrode moving platform is fixed inside the test chamber; a needle electrode mounting portion is provided on the needle electrode moving platform for fixing the needle electrode.

[0043] Based on the content of the above embodiment, as an optional embodiment, an air inlet pipe is provided on the outer wall of the test chamber 213 ; the air inlet pipe is used to introduce a specified protective gas into the test chamber 213 .

[0044] Specifically, in an embodiment of the present application, the test chamber includes a shell, and an air inlet pipe is arranged on the wall of the shell. The shell of the test chamber can be made of acrylic material, and its upper cover is detachable, which is convenient for replacing the sample, and the test chamber maintains good air tightness after the upper cover is closed. An air inlet pipe with a diameter of 8 mm can be arranged on the outer wall of the test chamber for introducing a specified protective gas, such as high-purity argon, so that a good dielectric barrier discharge effect can be achieved on the surface of the dielectric to be tested.

[0045] Furthermore, in an embodiment of the present application, the needle electrode moving platform is connected to a control computing system, which is used to provide control instructions to control the operation of the needle electrode moving platform, thereby enabling the needle electrode moving platform to control the needle electrode fixed thereon to move and position above the surface of the dielectric to be tested according to a preset path.

[0046] Figure 4 is a schematic diagram of the structure of the needle electrode moving platform provided in the embodiment of the present application, such as Figure 4 As shown, in the embodiment of the present application, the needle electrode moving platform 214 can adopt an XY dual-axis platform, and the XY dual-axis platform includes two linear slide modules on the X axis and one linear slide module on the Y axis; Each linear slide module 2140 includes a rolling screw 2141, a linear guide 2142 and a slider 2143, wherein the linear guide 2142 is used to support the slider 2143 and guide the slider 2143 to move; the slider 2143 is built with a threaded through hole so that the rolling screw 2141 passes through the slider 2143; a motor connecting plate and a coupling 2145 are installed at the end of each linear slide module 2140, wherein the motor connecting plate is used to fix the servo motor 2144, and the coupling 2145 is used to connect the servo motor 2144 and the rolling screw 2141 to convert the rotational motion of the servo motor 2144 into the linear motion of the slider 2143; an encoder is provided on the shaft end of the servo motor 2144, which rotates synchronously with the servo motor and is used to monitor the operating status of the servo motor; Among them, the two linear slide modules on the X-axis are fixed by guide rods 2146 and couplings 2145, the linear slide module on the Y-axis is fixed on the sliders 2143 of the two linear slide modules on the X-axis, and the slider 2143 of the linear slide module on the Y-axis is fixedly connected to the needle electrode mounting part 2147.

[0047] Specifically, in the embodiment of the present application, the XY dual-axis platform includes a linear slide module, a servo motor and an encoder. The XY dual-axis platform is fixed inside the test chamber, and can be specifically constructed by combining three linear slide modules into an "I" structure. The two linear slide modules of the X-axis are fixed by guide rods and couplings, and the linear slide module on the Y-axis is fixed on the sliders of the two X-axis. The slider on the Y-axis is used to fix the needle electrode mounting part, and the needle electrode mounting part can specifically adopt an electrode fixing frame.

[0048] Further, in an embodiment of the present application, each linear slide module mainly includes a rolling screw, a linear guide and a slider. The linear guide is used to support the slider and guide it to move along a fixed path. In addition, a motor connecting plate and a coupling are installed at the end of the linear slide module. The motor connecting plate is used to fix the servo motor, and the servo motor and the rolling screw are connected through the coupling, so that when the motor rotates, the rolling screw can be driven to rotate. After the rolling screw rotates, it can push the slider forward or backward, thereby converting the rotational motion of the servo motor into the linear motion of the slider.

[0049] Further, in the embodiment of the present application, the servo motor is connected to the linear slide module through a coupling, and is used to drive the corresponding linear slide module, accurately control the linear movement of the slider, and then control the precise movement of the needle electrode fixed on the linear slide module on the Y axis. The encoder is installed at the shaft end of the servo motor, which rotates synchronously with the servo motor, monitors the actual rotation position of the servo motor in real time, and feeds back the relevant position information to the controller in the control calculation system.

[0050] More specifically, during measurement, the measuring needle electrode is fixed on the slider of the Y axis. The measuring needle electrode adopts a high-precision Kelvin probe with a curvature radius of 5 nm. The Kelvin probe is directly opposite to the flat electrode below. Before measurement, the dielectric to be measured is placed and fixed on the flat electrode, and the distance between the flat electrode and the needle electrode is adjusted to maintain a constant distance. The servo motor drives the linear module to control the needle electrode to move on the two-dimensional plane of the plate electrode.

[0051] The servo motor can use an AC servo motor with an encoder, and the working mode selects the position control mode. The movement distance and speed of the motor are controlled by the number and frequency of external input pulses. The servo motor driver receives the pulse command from the PLC controller and drives the movement of the servo motor. The servo motor is equipped with an encoder to feed back the actual position and speed of the motor to the servo driver to achieve closed-loop control of the servo motor. The linear module advances 50mm when the servo motor rotates one circle, and the accuracy of the XY dual-axis reaches 5μm. The load capacity of the linear module of the XY dual-axis platform is 10kg, the repeatability accuracy is ±0.05mm, the stroke length is 100mm, and the maximum speed is 2m / s.

[0052] The system of the embodiment of the present application, by introducing the mechanical control structure of the XY dual-axis platform, can realize rapid and precise positioning of the needle electrode in the X-axis and Y-axis directions, thereby ensuring that the needle electrode can accurately reach the point to be tested and improving the accuracy of scanning detection; at the same time, it can ensure that the needle electrode can perform scanning detection in different positions and directions. This flexibility enables the needle electrode to adapt to samples of various complex shapes and sizes, thereby expanding the application scope of scanning detection.

[0053] Furthermore, in an embodiment of the present application, the electrical measurement device is implemented using a programmable electrometer and a high-voltage probe. The needle electrode lead-out terminal is connected to the constant charge trap excitation source lead-out terminal, and a programmable electrometer is connected in series in the measurement loop to measure the discharge current and the transferred charge, and a high-voltage probe is connected at both ends of the measurement electrode to measure the discharge voltage.

[0054] In this way, by connecting the electrical measuring device to the measuring electrode and the control computing system respectively, the electrical measuring device can synchronously measure the trap current data and discharge voltage data of each scanning position point, and transmit the trap current data and discharge voltage data of each scanning position point to the control computing system. The control computing system can then use the trap current data and discharge voltage data of each scanning position point to generate a two-dimensional trap state distribution map of the surface of the dielectric to be measured.

[0055] The system of the embodiment of the present application utilizes a trap state measurement system and a control computing system to design a trap state measurement control system, thereby separating system measurement from control. This can improve system measurement accuracy and stability, while also facilitating system maintenance and upgrades, and promoting system modular design.

[0056] Figure 5 3 is a schematic diagram of the structure of a high-precision trap state distributed scanning system for ceramic dielectrics provided in an embodiment of the present application. Figure 5 As shown, the control computing system 22 includes a servo driver 221, a controller 222 and a measurement and control unit 223 connected in sequence; The servo driver 221 is connected to each servo motor and encoder on the XY dual-axis platform; the measurement and control unit 223 is connected to the electrical measurement device 215 in the trap state measurement control system; The measurement and control unit 223 is used to send control instructions to the controller 222; The controller 222 is used to respond to the control instruction, control the servo driver 221 to drive each servo motor on the XY dual-axis platform to operate, so as to control the needle electrode 212 in the trap state measurement control system 2 to move according to the preset path, and discharge each scanning position point on the surface of the dielectric 3 to be measured one by one, and measure the trap current data and discharge voltage data of each scanning position point; The measurement and control unit 223 is also used to analyze and process the trap current data and discharge voltage data of each scanning position point according to the isothermal current decay method, and generate a two-dimensional trap state distribution map of the surface of the dielectric to be measured.

[0057] Specifically, in the embodiments of the present application, the control and computing system may specifically adopt a PLC control system, the controller may adopt a PLC controller, and the measurement and control unit may specifically be implemented using a PC.

[0058] In a specific embodiment of the present application, the PLC control system specifically adopts the control method of "PC + PLC controller" to realize the automatic operation of the system. The PC is responsible for providing the user interface and advanced control functions, and is connected to the PLC controller to issue instructions and control the system. The PLC controller is responsible for real-time control of the servo motor to ensure the precise movement and positioning of the needle electrode in the experiment. The measurement system can automatically perform the path planning of the needle electrode, automatically move the needle electrode to the specified position according to the preset path, and automatically complete the discharge operation and data collection during the test. The automated integration of the system can effectively improve the accuracy and efficiency of experimental operations, simplify the corresponding test process, and realize the automation and intelligence of operations.

[0059] Among them, the PC in the PLC control system can provide a human-computer interaction platform through a graphical user interface, determine the motion trajectory of the measuring needle electrode, process the discharge voltage and current data obtained after measurement, calculate the trap state distribution on the material surface and draw a two-dimensional distribution map of the trap state.

[0060] The PLC controller receives control instructions from the PC and transmits them to the servo motor driver to control the movement of each servo motor on the XY dual-axis platform, and adjusts the motor position accuracy through semi-closed loop feedback through the encoder.

[0061] Based on the content of the above embodiment, as an optional embodiment, the control computing system further includes a switch module; the first input end of the switch module is connected to the positive electrode of the constant charge trap excitation source, the output end of the switch module is connected to the needle electrode, and the second input end of the switch module is connected to the controller; The controller is used to control the switch state of the switch module to control the needle electrode discharge.

[0062] Specifically, in an embodiment of the present application, the switch module adopts an IGBT switch module, and the PLC controller can also control the switch state of the IGBT switch module, thereby controlling the discharge of the measuring electrode, and effectively realizing automatic discharge control during the movement and scanning of the needle electrode.

[0063] Furthermore, the servo motor driver can receive instructions from the PLC to achieve precise control of the servo motor, and receive information fed back by the encoder to adjust the operating state of the motor.

[0064] It should be noted that in the embodiments of the present application, the PLC controller can be connected to the PC via an Ethernet port, connected to the servo motor driver via optical fiber, and connected to the external switch module via an optoelectronic isolation module to ensure electrical isolation and safe operation of the system.

[0065] In an embodiment of the present application, the PLC control system can adopt a multi-level PID control method to achieve precise control. The multi-level PID control structure includes a PLC layer and a servo motor driver layer. The PLC layer is composed of a position loop PID and a speed feedforward control, and the servo motor driver layer includes a speed loop PID and a current loop PID. The servo motor driver operating mode selects the position speed mode, and the PLC sends an analog ±10V speed instruction, so that the PLC can take over the PID control of the position loop and the speed loop. The current loop is retained inside the driver, and this built-in loop is used to achieve fast torque control. The encoder at the motor end provides internal closed-loop feedback for the servo driver to monitor the rotation position of the motor in real time. At the same time, a linear grating ruler is added as an external feedback system to directly measure the position of the slider and send the feedback signal to the PLC to achieve full closed-loop control.

[0066] Furthermore, the position loop PID control is implemented through the PLC control system, which calculates the error between the target position and the actual position and outputs the speed command. The speed loop PID control is implemented by the servo motor driver, which outputs the corresponding acceleration command according to the error between the target speed and the actual speed. The current loop PID is built into the servo motor driver and is responsible for adjusting the motor current according to the acceleration command to accurately control the torque. The speed feedforward control calculates the feedforward speed signal based on the lead of the screw and the motor constant, compensates for the system response time, and reduces the burden of PID control.

[0067] In the PLC control system, the real-time error is calculated through the encoder feedback position signal. When the error exceeds the set threshold, the PLC starts the fine-tuning control mode and enters the low-speed adjustment state to ensure that the needle electrode can accurately stop at the target scanning position point.

[0068] In the PLC control system, the S-curve acceleration and deceleration algorithm is combined to control the movement of the needle electrode. The speed can be calculated every 1ms, and the running speed of the servo motor can be adjusted according to the S-curve formula to constrain its maximum acceleration, avoid sudden speed changes, and ensure that the needle electrode accelerates and decelerates smoothly along the predetermined trajectory. At the same time, the PLC control system calculates the target position at the current time point every 1ms according to the 1ms interpolation cycle, and dynamically adjusts the speed and acceleration of the motor to gradually approach the target point to achieve high-precision path tracking.

[0069] Figure 6: is a schematic diagram of the execution flow of the high-precision trap state distributed scanning system for ceramic dielectrics provided in an embodiment of the present application, such as Figure 6 As shown in the figure, it can be mainly divided into two parts. The first is sample preparation and measurement preparation. After coating the surface of the carbon ceramic resistor with polyperfluoroethylene propylene (FEP) coating, it is dried and placed on the flat electrode. After closing the upper cover of the test chamber, a certain pressure of argon gas is introduced into the chamber to achieve the best dielectric barrier discharge effect. Next, the trap state measurement operation is performed on its surface.

[0070] Specifically, before the measurement begins, the movement path of the needle electrode probe needs to be set first. Exemplarily, the dielectric to be tested is a disc structure with a diameter of 50 mm. The dielectric to be tested is divided into a 5*5 array, and the horizontal and vertical distances between each scanning position point are 8 mm. The scanning position point in the upper left corner of the dielectric to be tested is set as the starting point (1,1), and the coordinates of the 25 scanning position points are drawn on the PC. When sorting the PC path, a serpentine scanning strategy is adopted, that is, odd rows move from left to right, and even rows move from right to left, so as to reduce extra travel and improve measurement efficiency. The Kelvin probe moves to each array point in turn according to the set path. The step distance of each movement is calculated by the PC. The PC sends the path information to the PLC controller and controls the movement of the servo motor through the PLC. The coordinates of the scanning position point are calculated by the following formula: ; in, Represents the row and column numbers of the matrix respectively ( ), The physical coordinates of the scan position point.

[0071] Start the system, the PC sends an initialization command to the servo motor driver through the PLC controller, controls the servo motor of the XY dual-axis platform to perform the origin return operation, and starts the Kelvin probe at the starting position. After reaching the target point, the needle electrode remains stable, providing a precise physical position for the discharge operation. The constant charge trap excitation source is externally connected to the Kelvin probe. After the needle electrode is stably positioned at the target point, the PLC controller controls the external switch module to close and start the discharge. During the discharge process, the high-voltage probe and electrometer acquisition system measure the discharge voltage and de-trapping current data of each scanning position point, record the data and transmit it to the PC for storage and extraction of the de-trapping current.

[0072] In the embodiment of the present application, during the needle electrode movement scanning process, the residence time of the needle electrode is determined according to the electron relaxation time of the trap current, and the delay instruction is transmitted to the PLC controller. After the discharge is completed, the PLC controller controls the external switch to disconnect and controls the needle electrode to move to the next point (1, 2), continues to discharge and measure, and repeats the above operation until the measurement of all N=25 scanning positions is completed, and the trap current data and discharge voltage data of each scanning position are analyzed and processed to generate a two-dimensional distribution map of the trap energy level on the surface of the dielectric to be tested, that is, a two-dimensional trap state distribution map.

[0073] Furthermore, in the embodiments of the present application, the movement and residence time of the needle electrode need to be dynamically adjusted according to the release time of the trapped electrons of the material. By precisely controlling the residence time of the needle electrode at each scanning position, the system can capture the release characteristics of trapped electrons at each point, and further realize the fine analysis and regulation of the electrical properties of the material surface.

[0074] Specifically, it is necessary to first obtain the current signal of each scanning position point from the trap state measurement system in real time, that is, the trap state electron detrapping current. This current signal reflects the process of the trapped state electron being released from the bound state to the conduction band state. The electron release time constant can be obtained by fitting the real-time detrapping current data.

[0075] ; in, is the detrapping current, is the peak current, is the time constant of the detrapping current decay, that is, the electron release time constant.

[0076] After calculating the electron release time constant τ at each scanning position, the system needs to ensure that the time the needle electrode stays matches the electron release time constant at that point. For a certain scanning position, the time the needle electrode stays can be set to a multiple of the discharge current cycle at that point to ensure that the needle electrode can stay at each scanning position for a long enough time to ensure that multiple sets of trap current data are obtained in order to accurately capture the trap state information. Among them, the discharge current cycle refers to the end time of the first trap current to the end time of the next trap current.

[0077] The selection of the scale factor (multiplier) will affect the accuracy and scanning speed of the system. A larger scale factor value helps to capture the information of the release of trapped electrons for a longer time, but may reduce the scanning speed; a smaller scale factor value can increase the scanning speed, but may sacrifice some accuracy. In the embodiment of the present invention, the scale factor is 10.

[0078] Furthermore, the PC calculates the electron release time constant of each point based on the real-time data returned by the trap state measurement system, and passes the dwell time instruction to the PLC controller. The PLC controller adjusts the dwell time of the needle electrode according to the instruction to ensure that the measurement of each scanning position can cover enough discharge cycles. This adjustment process is real-time, ensuring that the dwell time of each scanning position matches the trap state characteristics of that point.

[0079] At the same time, during the measurement process, the PC can also synchronously receive the measurement data sent by the electrical measurement device and associate the data with the corresponding point coordinates. Finally, all the data are stored in the database, and the trap energy level and trap density of each point are calculated according to the isothermal current decay method to generate a two-dimensional trap state distribution map of the surface trap state of the dielectric to be measured.

[0080] During scanning, path planning and needle electrode movement will continue to follow the predetermined path, and the dwell time will be adjusted according to the actual measurement at each scanning position. Since the electron release time constant at each point is different, the PLC controller will dynamically adjust the dwell time at each point to ensure that sufficient de-trapping current data can be collected at each point, thereby generating a high-precision two-dimensional trap state distribution map.

[0081] The system of the embodiment of the present application adopts a PLC control system and a multi-level PID control method to achieve automatic movement and precise positioning of a high-precision probe, and by considering the movement and residence time of the probe to match the electron release time constant, it ensures that longer-term trap state electron release information is captured and sufficient trap current data is obtained, thereby improving the generation accuracy of the two-dimensional trap state distribution map.

[0082] Based on the content of the above embodiment, as an optional embodiment, it also includes: a mesoscopic regulation guidance system; Mesoscopic regulatory guidance systems are used to: Obtaining a two-dimensional trap state distribution map on the surface of the dielectric to be tested; Based on the two-dimensional trap state distribution map, determine the trap state performance defects existing on the surface of the dielectric to be tested; According to the trap state performance defects, the modification strategy information of the dielectric to be tested is output.

[0083] Specifically, in the embodiments of the present application, a guidance system for mesoscopic regulation of carbon ceramic resistors is also provided.

[0084] Figure 7 : is a flow chart of the mesoscopic control technology of carbon ceramic resistor provided in the embodiment of the present application, such as Figure 7As shown, the specific implementation steps of mesoscopic regulation are: first, the preparation of carbon ceramic resistors, specifically selecting appropriate proportions of carbon powder, calcined alumina aggregate, clay and additives, using a ball mill to fully mix the prepared materials, and the ball milling time is 12 hours; then, the mixed raw materials are made into uniform particles, and a suitable mold is selected for pressing and forming; then, the pressed embryo is sintered in a high-temperature furnace, the sintering temperature is 1200°C, and the sintering atmosphere is a reducing atmosphere; after cooling, the FEP coating is evenly coated on the surface of the carbon ceramic resistor, and then heated and cured. Finally, the aforementioned high-precision trap state distributed scanning system can be used to perform trap state distributed scanning imaging of the carbon ceramic resistor, and the trap state distribution on the surface of its FEP coating can be measured to analyze the charge migration characteristics of the material.

[0085] In an embodiment of the present application, the mesoscopic control guidance system can obtain a two-dimensional trap state distribution map of the surface of the dielectric to be tested, perform image analysis on the material properties of the dielectric surface to be tested, analyze the trap state density and energy level distribution in a specific trap area, and determine the trap state performance defects on the surface of the dielectric to be tested. These data directly reflect the local heterogeneity of the charge migration path and electrical properties of the material, and provide an important basis for the direction of performance control. Using these test results, the material preparation process can be optimized.

[0086] In this embodiment, the trap state performance defect can represent that the density of trap centers in the shallow trap region on the surface of the dielectric to be tested, or the size of the region, or the trap state distribution information, etc. do not meet the actual performance requirements.

[0087] In the embodiment of the present application, according to the analyzed trap state performance defects, the system can output modification strategy information corresponding to the dielectric to be tested.

[0088] Based on the content of the above embodiment, as an optional embodiment, the mesoscopic regulation guidance system is specifically used for: When it is determined that the trap state performance defect is that the density of the trap center in the shallow trap region exceeds the first threshold, the modification strategy information is output as follows: adjusting the sintering time and temperature of the dielectric to be tested during the preparation process; Or, when it is determined that the trap state performance defect is that the area of ​​the shallow trap region is less than the second threshold, and the trap center density of the shallow trap region is less than the third threshold, the output modification strategy information is: during the preparation process of the dielectric to be tested, the duration of plasma treatment of the surface of the dielectric to be tested is extended to the target duration.

[0089] Specifically, in the embodiments of the present application, according to the analysis results of the guidance system on the two-dimensional trap state distribution map on the surface of the dielectric to be tested, guiding modification strategy information can be output to guide technicians to optimize the material preparation process.

[0090] It should be noted that the first threshold, the second threshold and the third threshold can be determined according to the performance requirements of the ceramic dielectric material actually prepared. When the density of the trap centers in the shallow trap region exceeds the first threshold, it means that the area of ​​the shallow trap region is too large; when the area of ​​the shallow trap region is less than the second threshold and the density of the trap centers in the shallow trap region is less than the third threshold, it means that the area of ​​the shallow trap region is too small and the density of the trap centers is too small.

[0091] Alternatively, the modulation method includes adjusting the sintering time and temperature to change the microstructure and density of the material, which directly affects the energy level and distribution area of ​​the trap state. For example, in some cases, increasing the sintering temperature may increase the density of the material, reduce grain boundary defects, and thus reduce the density of trap states.

[0092] Alternatively, the selection and concentration adjustment of dopants are also important means of regulation. By introducing or controlling additional traps, the electrical properties of the material can be further optimized. For example, doping Mn-based metal oxides can adjust the electrical properties and trap state distribution of the material by introducing defect dipoles. The appropriate doping concentration can balance the introduction of trap states with the improvement of the material's electrical properties, thereby enhancing its dielectric properties without affecting the structural integrity of the material.

[0093] Optionally, by using specific surface treatment processes such as plasma treatment, ordered microstructures can be formed on the surface of the material. These structures can locally regulate the distribution of trap states and further improve the performance consistency and stability of the material.

[0094] In the embodiment of the present application, when it is determined that the trap state performance defect is that the area of ​​the shallow trap region is less than the second threshold, and the density of the trap center in the shallow trap region is less than the third threshold, the output modification strategy information is: during the preparation process of the dielectric to be tested, the duration of plasma treatment on the surface of the dielectric to be tested is extended to the target duration, indicating that the area of ​​the shallow trap region on the surface of the dielectric to be tested measured at this time is too small, and the density of the trap center is too small, therefore, the distribution of the trap state can be directionally regulated by extending the FEP coating process time. Then, the system can be used again to measure the distribution of trap states on the surface of the modified FEP coating to verify the effectiveness of the regulation.

[0095] In one embodiment of the present application, during the preparation of the carbon ceramic resistor, the plasma treatment time for the FEP coating surface is 60 seconds. During the optimization of the material preparation process, the plasma treatment time for the FEP coating surface is extended to 600 seconds.

[0096] Figure 8 : is a schematic diagram of the trap state test results of the unmodified FEP coating on the surface of the carbon ceramic resistor provided by the present application, such as Figure 8As shown, the sample before modification is fixed on a flat electrode, and the distribution of surface trap states is measured using a high-precision dielectric trap state distribution scanning imaging system to obtain a trap state distribution map of the sample surface. Figure 8 It can be seen that the trap energy level shows a distribution characteristic that increases from the center to the periphery, the shallow trap area is small, and the energy level density of the trap center is small. In order to increase the surface shallow trap energy level density, the plasma treatment time is extended during the preparation of carbon ceramic resistors. The modified FEP coating is again measured by a high-precision dielectric trap state distributed scanning imaging system to measure the surface trap state distribution state.

[0097] Fig. 9 Schematic diagram of the trap state distribution on the surface of the FEP coating after the surface of the carbon ceramic resistor provided by the present application is modified. Figure 8 By comparison, it was found that after extending the plasma treatment time, the density of shallow trap energy levels on the FEP coating surface increased significantly, and the shallow trap area diffused.

[0098] The system of the embodiment of the present application can accurately characterize the two-dimensional trap state distribution on the surface of the dielectric material through high-precision dielectric trap state distributed scanning imaging, and provide scientific basis and technical support for material modification and optimization through image analysis results.

[0099] The control method of the high-precision trap state distributed scanning system provided by the present application is described below. The control method of the high-precision trap state distributed scanning system described below and the high-precision trap state distributed scanning system for ceramic dielectrics described above can be referenced to each other.

[0100] Fig.10 is a flow chart of a control method of a high-precision trap state distributed scanning system provided in an embodiment of the present application. It can be understood that it can be applied to any of the aforementioned high-precision trap state distributed scanning systems for ceramic dielectrics, such as Fig.10 As shown, the method includes: Step S1, controlling the needle electrode in the trap state measurement control system to move along a preset path, and during the movement, using a constant charge trap excitation source to excite the needle electrode to perform dielectric barrier discharge on the surface of the dielectric to be measured, so as to generate a trap current; Step S2, discharging each scanning position point on the surface of the dielectric to be tested one by one, and synchronously measuring the detrapping current data of each scanning position point; Step S3, generating a two-dimensional trap state distribution map of the surface of the dielectric to be tested based on the trap current data of each scanning position point.

[0101] It should be understood that the method in the above embodiment is applied to the aforementioned high-precision trap-state distributed scanning system, and its implementation principle and technical effect are similar to those described in the above system. The detailed process of the method can refer to the corresponding description process in the above system, and will not be repeated here.

[0102] The control method of the high-precision trap state distributed scanning system of the embodiment of the present application uses a constant charge trap excitation source to provide a stable excitation source, and combines it with an automated control method to automatically move and accurately scan a single needle electrode on the surface of a dielectric to be tested. It can automatically perform scanning path planning, dielectric barrier discharge positioning, discharge control, and discharge data collection, and efficiently generate a two-dimensional trap state distribution map of the surface of the dielectric to be tested. It can effectively realize the measurement of the spatial distribution of trap states on the surface of ceramic dielectrics, has an efficient, accurate, controllable, and low-cost measurement effect, and is suitable for electrical property analysis and material modification of the surfaces of various ceramic dielectric materials.

[0103] It is understandable that the processor in the embodiment of the present application may be a central processing unit (CPU), or other general-purpose processors, digital signal processors (DSP), application-specific integrated circuits (ASIC), field programmable gate arrays (FPGA) or other programmable logic devices, transistor logic devices, hardware components or any combination thereof. The general-purpose processor may be a microprocessor or any conventional processor.

[0104] The method steps in the embodiments of the present application can be implemented by hardware or by a processor executing software instructions. The software instructions can be composed of corresponding software modules, and the software modules can be stored in random access memory (RAM), flash memory, read-only memory (ROM), programmable read-only memory (PROM), erasable programmable read-only memory (EPROM), electrically erasable programmable read-only memory (EEPROM), registers, hard disks, mobile hard disks, CD-ROMs, or any other form of storage medium known in the art. An exemplary storage medium is coupled to the processor so that the processor can read information from the storage medium and write information to the storage medium. Of course, the storage medium can also be a component of the processor. The processor and the storage medium can be located in an ASIC.

[0105] In the above embodiments, it can be implemented in whole or in part by software, hardware, firmware or any combination thereof. When implemented by software, it can be implemented in whole or in part in the form of a computer program product. The computer program product includes one or more computer instructions. When the computer program instructions are loaded and executed on a computer, the process or function described in the embodiment of the present application is generated in whole or in part. The computer may be a general-purpose computer, a special-purpose computer, a computer network, or other programmable device. The computer instructions may be stored in a computer-readable storage medium or transmitted through the computer-readable storage medium. The computer instructions may be transmitted from a website site, computer, server or data center to another website site, computer, server or data center by wired (e.g., coaxial cable, optical fiber, digital subscriber line (DSL)) or wireless (e.g., infrared, wireless, microwave, etc.) means. The computer-readable storage medium may be any available medium that a computer can access or a data storage device such as a server or data center that includes one or more available media integrated. The available medium may be a magnetic medium (e.g., a floppy disk, a hard disk, a tape), an optical medium (e.g., a DVD), or a semiconductor medium (e.g., a solid-state drive (SSD)), etc.

[0106] It should be understood that the various numerical numbers involved in the embodiments of the present application are only used for the convenience of description and are not used to limit the scope of the embodiments of the present application.

[0107] It should be understood that expressions such as "including" and "may include" that may be used in the present application indicate the existence of the disclosed functions, operations, or constituent elements, and do not limit one or more additional functions, operations, and constituent elements. In the present application, terms such as "including" and / or "having" may be interpreted as indicating specific characteristics, numbers, operations, constituent elements, components, or combinations thereof, but may not be interpreted as excluding the existence or possibility of adding one or more other characteristics, numbers, operations, constituent elements, components, or combinations thereof.

[0108] In the description of the embodiments of the present application, it should be noted that, unless otherwise clearly specified and limited, the term "connection" should be understood in a broad sense. For example, "connection" can be a detachable connection or a non-detachable connection; it can be a direct connection or an indirect connection through an intermediate medium. Among them, "fixed connection" means that the two are connected to each other and the relative position relationship after the connection remains unchanged. "Rotational connection" means that the two are connected to each other and can rotate relative to each other after the connection. "Sliding connection" means that the two are connected to each other and can slide relative to each other after the connection. The directional terms mentioned in the embodiments of the present application, such as "upper", "lower", "inner", "outer", etc., are only reference to the directions of the accompanying drawings. Therefore, the directional terms used are for better and clearer explanation and understanding of the embodiments of the present application, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the embodiments of the present application.

[0109] In addition, in the embodiments of the present application, the mathematical concepts mentioned are symmetry, equality, parallelism, verticality, etc. These limitations are all for the current state of the art, rather than being absolutely strict definitions in a mathematical sense, and allow a small amount of deviation, approximation to symmetry, approximation to equality, approximation to parallelism, approximation to verticality, etc. are all possible. For example, A and B are parallel, which means that A and B are parallel or approximately parallel, and the angle between A and B can be between 0 and 10 degrees. A and B are perpendicular, which means that A and B are perpendicular or approximately perpendicular, and the angle between A and B can be between 80 and 100 degrees.

[0110] The above is only a specific implementation of the present application, but the protection scope of the present application is not limited thereto. Any person skilled in the art who is familiar with the present technical field can easily think of changes or substitutions within the technical scope disclosed in the present application, which should be included in the protection scope of the present application. Therefore, the protection scope of the present application should be based on the protection scope of the claims.

Claims

1. A high-precision trap state distributed scanning system for ceramic dielectrics, characterized in that: include: Constant charge trap excitation source and trap state measurement control system; The trap state measurement control system comprises a measurement electrode, and the measurement electrode comprises a flat electrode and a needle electrode; the needle electrode is vertically arranged above the flat electrode according to a preset interval; a side of the flat electrode facing the needle electrode is used to fix the dielectric to be measured, so that the dielectric to be measured is located directly below the needle electrode; The positive electrode of the constant charge trap excitation source is connected to the needle electrode, and the negative electrode is connected to the plate electrode, and is used to excite the needle electrode to perform dielectric barrier discharge on the surface of the dielectric to be measured to generate a trapping current when the system is measuring; The trap state measurement control system is used to control the needle electrode to move along a preset path to discharge each scanning position point on the surface of the dielectric to be tested one by one, and synchronously measure the trap current data of each scanning position point, so as to generate a two-dimensional trap state distribution map of the surface of the dielectric to be tested based on the trap current data of each scanning position point.

2. The high-precision trap state distributed scanning system for ceramic dielectrics according to claim 1, characterized in that: The trap state measurement control system comprises a trap state measurement system and a control calculation system, wherein the trap state measurement system comprises a test chamber, a needle electrode moving platform and an electrical measurement device; The needle electrode moving platform is fixed inside the test chamber; a needle electrode mounting portion is provided on the needle electrode moving platform for fixing the needle electrode; The needle electrode moving platform is connected to the control computing system and is used to control the needle electrode to move above the surface of the dielectric to be tested along a preset path under the control of the control computing system; The electrical measuring device is connected to the measuring electrode and the control computing system respectively, and is used to measure the trapping current data and the discharge voltage data of each scanning position point, and transmit the trapping current data and the discharge voltage data of each scanning position point to the control computing system; The control and calculation system is used to generate a two-dimensional trap state distribution diagram of the surface of the dielectric to be tested by using the trap current data and the discharge voltage data of each of the scanning position points.

3. The high-precision trap state distributed scanning system for ceramic dielectrics according to claim 2, characterized in that: An air inlet pipe is arranged on the outer wall of the test chamber; the air inlet pipe is used to introduce a designated protective gas into the test chamber.

4. The high-precision trap state distributed scanning system for ceramic dielectrics according to claim 2, characterized in that: The needle electrode moving platform is an XY dual-axis platform, and the XY dual-axis platform includes two linear slide modules on the X axis and one linear slide module on the Y axis; Wherein, each of the linear slide modules comprises a rolling screw, a linear guide and a slider, wherein the linear guide is used to support the slider and guide the slider to move; the slider is provided with a threaded through-hole so that the rolling screw can pass through the slider; a motor connecting plate and a coupling are installed at the end of each linear slide module, wherein the motor connecting plate is used to fix the servo motor, and the coupling is used to connect the servo motor and the rolling screw so as to convert the rotational motion of the servo motor into the linear motion of the slider; an encoder is provided on the shaft end of the servo motor, which rotates synchronously with the servo motor and is used to monitor the running status of the servo motor; Among them, the two linear slide modules on the X-axis are fixed by guide rods and couplings, the linear slide module on the Y-axis is fixed on the sliders of the two linear slide modules on the X-axis, and the slider of the linear slide module on the Y-axis is fixedly connected to the needle electrode mounting part.

5. The high-precision trap state distributed scanning system for ceramic dielectrics according to claim 4, characterized in that: The control computing system includes a servo driver, a controller and a measurement and control unit connected in sequence; The servo driver is connected to each servo motor and encoder on the XY dual-axis platform; the measurement and control unit is connected to the electrical measurement device in the trap state measurement and control system; The measurement and control unit is used to send control instructions to the controller; The controller is used to respond to the control instruction, control the servo driver to drive each servo motor on the XY dual-axis platform to operate, so as to control the needle electrode in the trap state measurement control system to move according to a preset path, and discharge each scanning position point on the surface of the dielectric to be measured one by one, and measure the trap current data and discharge voltage data of each scanning position point; The measurement and control unit is also used to analyze and process the trap current data and discharge voltage data of each scanning position point according to the isothermal current decay method to generate a two-dimensional trap state distribution map of the surface of the dielectric to be measured.

6. The high-precision trap state distributed scanning system for ceramic dielectrics according to claim 5, characterized in that: The control computing system further comprises a switch module; a first input end of the switch module is connected to the positive electrode of the constant charge trap excitation source, an output end of the switch module is connected to the needle electrode, and a second input end of the switch module is connected to the controller; The controller is used to control the switch state of the switch module to control the discharge of the needle electrode.

7. The high-precision trap state distributed scanning system for ceramic dielectrics according to any one of claims 1 to 6, characterized in that: The constant charge trap excitation source includes a friction nanogenerator and a rotary motor; The rotating motor is connected to the linkage shaft of the friction nanogenerator through a coupling, so as to provide mechanical energy input to the friction nanogenerator; The friction nanogenerator comprises two symmetrically arranged independent rotating structures, each of which comprises a stator and a rotor; In each of the independent rotating structures, a layer of electrode film is attached to the surface of the stator facing the rotor, and the electrode film layer is evenly divided into a plurality of fan-shaped units, which are divided into two groups of inner and outer complementary electrode groups; wherein the inner electrode group is formed by radially arranging the fan-shaped units around the axis, and the inner and outer electrode groups are separated by fine grooves; The rotor comprises a plurality of fan-shaped blades, and the area of ​​the fan-shaped blades is the same as the area of ​​the fan-shaped unit; A polymer film layer is attached to the surface of the blades on the rotor facing the stator, which serves as a friction layer of the friction nanogenerator.

8. The high-precision trap state distributed scanning system for ceramic dielectrics according to any one of claims 1 to 6, characterized in that: Also includes: Mesoscopic regulatory guidance system; The mesoscopic regulatory guidance system is used for: Obtaining a two-dimensional trap state distribution map of the surface of the dielectric to be tested; Based on the two-dimensional trap state distribution map, determining the trap state performance defects existing on the surface of the dielectric to be tested; According to the trap state performance defects, modification strategy information of the dielectric to be tested is output.

9. The high-precision trap state distributed scanning system for ceramic dielectrics according to claim 8, characterized in that: The mesoscopic regulation guidance system is specifically used for: When it is determined that the trap state performance defect is that the density of the trap center in the shallow trap region exceeds a first threshold, outputting the modification strategy information is: adjusting the sintering time and temperature of the dielectric to be tested during the preparation process; Or, when it is determined that the trap state performance defect is that the area of ​​the shallow trap region is less than the second threshold, and the trap center density of the shallow trap region is less than the third threshold, the modification strategy information is output as: during the preparation process of the dielectric to be tested, the duration of plasma treatment of the surface of the dielectric to be tested is extended to the target duration.

10. A control method for a high-precision trap state distributed scanning system for ceramic dielectrics according to any one of claims 1 to 9, characterized in that: include: Controlling the needle electrode in the trap state measurement control system to move along a preset path, and during the movement, using the constant charge trap excitation source to excite the needle electrode to perform dielectric barrier discharge on the surface of the dielectric to be measured, so as to generate a trap current; Discharging each scanning position point on the surface of the dielectric to be tested one by one, and synchronously measuring the detrapping current data of each scanning position point; Based on the trap current data of each of the scanning position points, a two-dimensional trap state distribution map of the surface of the dielectric to be tested is generated.

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