MOS tube testing device and testing method

Abstract

The invention provides an MOS transistor testing device and testing method. The MOS transistor testing device comprises a driving circuit, a testing platform circuit board, a main power loop power supply device, a direct current electronic load and a control module. The driving circuit is used for providing a driving power supply; the main power loop power supply equipment is used for providing a direct-current power supply; the control module is used for generating a current control signal; the DC electronic load is connected with the main power loop power supply equipment and the output end of the control module, and generates a test current signal based on the DC power supply and the output signal of the control module; the test platform circuit board is connected with the DC electronic load and the output end of the drive circuit, and is driven by the drive power supply to carry out a through-current limit test on the MOS transistor channel based on a current signal provided by the DC electronic load. According to the invention, the through-flow limit of the channel of the MOS tube in relative time is reflected, and the failure rate of the MOS tube is effectively reduced.

Description

Technical Field

[0001] The invention belongs to the technical field of testing equipment for MOS tubes of electrical components, and relates to a MOS tube testing device and a testing method. Background Art

[0002] At present, the semiconductor industry is in a rapid development stage, among which MOS tube (metal oxide semiconductor field effect tube) is a very common semiconductor device, involving a wide range of applications, almost covering all power electronic circuit designs, especially in some switching power supplies, motor controllers, BMS (battery management system) mobile power supply and other fields. However, in actual applications, MOS tubes are often in some abnormal working modes, such as power short circuit, motor phase short, stall, BMS overcurrent protection, etc. In these circuit abnormal working modes, there is often a large current flowing through the MOS tube. Therefore, in the actual application process, an overcurrent protection circuit will be set in the circuit, and in order to prevent transient overload from causing the overcurrent protection circuit to malfunction, therefore, the overcurrent protection circuit has a certain delay, and at the same time, because of the error of the current detection resistor, the delay of the current detection signal and the system response, this requires the MOS tube to be able to work safely within a relative time even under large currents.

[0003] Therefore, many semiconductor manufacturers currently use proprietary integrated equipment to test the channel current of MOS tubes in their specifications. Although this test equipment has the advantages of standardization and simple operation, it also has many shortcomings, such as:

[0004] 1. The current value obtained from the test is biased towards the theoretical value. Since the proprietary integrated device places the MOS tube to be tested in a coolant environment for testing, and the coolant is fixed at a temperature of 25°C. However, in actual application, the MOS tube will be restricted by the environment and heat dissipation conditions, and the test environment temperature cannot be guaranteed to remain constant at a fixed temperature of 25°C; and the on-resistance value of the MOS tube will change with the change of temperature. The specific change curve is that as the temperature rises, the on-resistance value will also increase, resulting in a decrease in the overcurrent capacity of the MOS tube. Therefore, the current value obtained by using the proprietary integrated device for testing is biased towards the theoretical value, and it will easily cause the MOS tube channel to overcurrent and fail when applied to the circuit.

[0005] 2. The current value tested by the integrated device does not have a specific time definition. In actual application, the MOS tube will be in an abnormal working mode. The large current in these abnormal working modes is instantaneous. The current limit of the MOS tube channel in different relative times is different. For example, the shorter the time flowing through the MOS tube, the greater the current value flowing through the MOS tube. However, this type of equipment does not have a specific definition of the overcurrent time of the MOS tube channel, which makes the MOS tube fail due to improper overcurrent time setting.

[0006] 3. Most of this type of equipment is imported and is relatively expensive. The purpose of the test equipment is relatively single, the test process is relatively inflexible, the test parameters cannot be adjusted at will according to actual applications, and it cannot be used for other test projects. The initial investment of this type of equipment is large, and the payback period is very long, so the cost performance is relatively low.

[0007] Often, because designers do not correctly and quickly grasp the safe operating range of MOS tubes within a relative time, it is easy for incorrect parameter settings to cause the MOS tube to fail due to too long a current flow time or too much current flowing through it during actual application.

[0008] Therefore, in order to make up for the shortcomings of MOS tube professional testing equipment in actual applications and ensure the normal working environment of MOS tubes, the current limit capability of the MOS tube channel in a relative time should be tested according to the actual application requirements. It is very important to test the power MOS tube in simulated application scenarios, which can help designers quickly and correctly grasp the current limit value of the MOS tube in a relative time, and reduce the failure rate caused by overcurrent in the MOS tube channel by improving the reliability of the MOS tube in actual applications.

[0009] It should be noted that the above introduction to the technical background is only for the convenience of providing a clear and complete description of the technical solutions of the present invention and for the convenience of understanding by those skilled in the art. It cannot be considered that the above technical solutions are well known to those skilled in the art simply because these solutions are described in the background technology section of the present invention. Summary of the invention

[0010] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a MOS tube test device and a test method, which are used to solve the problem in the prior art that the MOS tube will be restricted by the environment in which it is located, and the on-resistance value of the MOS tube to be tested will change with the change of temperature, thereby causing the overcurrent capacity of the MOS tube to be weakened; in addition, in actual application, there are also working modes such as overload and abnormal protection in the circuit, so this requires that the MOS tube can work safely within a relatively long time even under large current. However, the through-current time and through-current limit value of the MOS tube are biased towards the theoretical value, which can easily lead to the problem of MOS tube failure in actual application.

[0011] To achieve the above-mentioned purpose and other related purposes, the present invention provides a MOS tube testing device, which includes: a driving circuit, a test platform circuit board, a main power loop power supply device, a DC electronic load and a control module;

[0012] The driving circuit is used to provide driving power;

[0013] The main power circuit power supply device is used to provide a DC power supply;

[0014] The control module is used to generate a current control signal;

[0015] The DC electronic load is connected to the main power circuit power supply device and the output end of the control module, and generates a current signal required for the test based on the output signal of the DC power supply and the control module;

[0016] The test platform circuit board is connected to the DC electronic load and the output end of the driving circuit, and performs a through-current limit test on the channel of the MOS tube to be tested based on the current signal provided by the DC electronic load under the drive of the driving power supply; wherein the test platform circuit board includes: the MOS tube to be tested, a current detection device, a voltage detection device and a detection value display device;

[0017] The gate of the MOS tube to be tested is connected to the driving power supply, the drain of the MOS tube to be tested is connected to the DC electronic load, and the source of the MOS tube to be tested is grounded with the main power circuit power supply device; the current detection device is arranged between the drain of the MOS tube to be tested and the DC electronic load, and is used to detect the drain current of the MOS tube to be tested; the voltage detection device is connected in parallel between the drain and the source of the MOS tube to be tested, and is used to detect the drain-source voltage of the MOS tube to be tested; the detection value display device is connected to the output ends of the current detection device and the voltage detection device, and is used to display the drain current, drain-source voltage and flow time of the MOS tube to be tested.

[0018] Optionally, the test platform circuit board further includes a protection module, which is disposed between the driving power supply and the MOS tube to be tested and is used to protect the MOS tube to be tested.

[0019] Optionally, the protection module includes an anti-reverse diode D1, a first resistor R1 and a second resistor R2, the anode of the anti-reverse diode D1 is connected to the driving power supply, and the cathode of the anti-reverse diode D1 is connected to one end of the first resistor R1; the other end of the first resistor R1 is connected to the gate of the MOS tube to be tested; one end of the second resistor R2 is connected to the gate of the MOS tube to be tested, and the other end is grounded.

[0020] Optionally, the test platform circuit board further includes a test socket, and the lower half of the pin of the MOS tube to be tested is connected to the test socket, and the upper half is exposed to the outside, so that the MOS tube to be tested is in a suspended state.

[0021] Optionally, the DC electronic load includes a USB communication interface for receiving a current control signal generated by the control module.

[0022] Optionally, the control module includes a control unit and a USB communication unit; the control unit is used to generate a current control signal; the USB communication unit is connected to the control unit to transmit the current control signal to the DC electronic load.

[0023] The present invention further provides a MOS tube testing method, which is implemented based on the above MOS tube testing device. The MOS tube testing method at least includes:

[0024] A set current is provided to the MOS tube to be tested to detect whether the MOS tube to be tested fails within a set time; if the MOS tube to be tested fails, the set current is the limit current value of the MOS tube to be tested; if the MOS tube to be tested does not fail, the set current is increased and then re-detected whether the MOS tube to be tested fails within the set time; or a constant current is provided to the MOS tube to be tested to detect the failure time of the MOS tube to be tested.

[0025] Optionally, whether the MOS tube to be tested is failed is determined based on the drain-source voltage of the MOS tube to be tested.

[0026] Optionally, the failure time is from the start of voltage application to a turning point where the drain-source voltage of the MOS tube to be tested increases and then decreases.

[0027] As described above, the present invention provides a MOS tube testing device and a testing method, which have the following beneficial effects:

[0028] 1. During application design, it is convenient for designers to quickly grasp the safe working range of the channel of the MOS tube to be tested in a relative time, improve the reliability of the MOS tube to be tested in practical applications, and reduce the failure rate caused by channel overcurrent.

[0029] 2. During the test, the lower half of the pin of the MOS tube to be tested is connected to the test socket, and the upper half is exposed to the outside, so that the MOS tube to be tested can be in a suspended state, and the heating factor of the MOS tube to be tested will not be introduced during the test process, and the current limit range of the MOS tube channel to be tested can be fully and truly reflected.

[0030] 3. The MOS tube test device of the present invention has strong overall flexibility, and its five components are independent of each other. Among them, only the test platform circuit board is a special device for this test. The manufacturing process of the test platform circuit board is relatively simple, and the cost of the components used is less than 100 yuan; in addition, the equipment of the four parts of the driving power supply, the main power circuit power supply equipment, the DC electronic load and the control module are general conventional test equipment, and they can be connected to each other through wires and plugs. When this test is not performed, the equipment used in the four parts of the driving power supply, the main power circuit power supply equipment, the DC electronic load and the control module can be used for other testing purposes. Therefore, the overall flexibility is strong, the equipment utilization rate is higher, and the cost of the test equipment is reduced. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] Figure 1 Shown is a structural block diagram of the MOS tube testing device of the present invention.

[0032] Figure 2 Shown is a circuit diagram of the test platform circuit board of the present invention.

[0033] Figure 3 Shown is a structural block diagram of the control module of the present invention.

[0034] Component number description

[0035] 1 MOS tube test device

[0036] 11. Driving Circuit

[0037] 12 Test platform circuit board

[0038] Q1 MOS tube to be tested

[0039] 121 Current detection device

[0040] 122 Voltage detection device

[0041] 123 Detection value display device

[0042] 124 Protection module

[0043] 13 Main power circuit power supply equipment

[0044] 14 DC Electronic Load

[0045] 15 Control Module

[0046] 151 Control Unit

[0047] 152 USB communication unit DETAILED DESCRIPTION

[0048] The following is an explanation of the embodiments of the present invention by means of specific examples. People familiar with the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification.

[0049] See also Figures 1 to 3 . It should be noted that the structures, proportions, sizes, etc. illustrated in the drawings in this specification are only used to match the contents disclosed in the specification for people familiar with this technology to understand and read, and are not used to limit the limiting conditions for the implementation of the present invention, so they have no substantial technical significance. Any structural decoration, change in proportional relationship or adjustment of size should still fall within the scope of the technical content disclosed by the present invention without affecting the effects and purposes that can be achieved by the present invention. At the same time, the terms such as "upper", "lower", "left", "right", "middle" and "one" quoted in this specification are only for the convenience of description, and are not used to limit the scope of the implementation of the present invention. Changes or adjustments in their relative relationships should also be regarded as the scope of the implementation of the present invention without substantially changing the technical content.

[0050] like Figure 1 As shown, this embodiment provides a MOS tube test device 1, including: a drive circuit 11, a test platform circuit board 12, a main power loop power supply device 13, a DC electronic load 14 and a control module 15;

[0051] like Figure 1 As shown, the driving circuit 11 is used to provide driving power.

[0052] Specifically, in this embodiment, the driving circuit 11 only needs to provide a low-power DC power supply (compared to the DC power supply provided by the active loop power supply device 13) to ensure that the driving power supply can reach 20V / 2A. In actual use, the driving power supply can be arbitrarily set according to the test requirements and is not limited to this embodiment.

[0053] like Figure 1 As shown, the main power loop power supply device 13 is used to provide a DC power supply.

[0054] Specifically, in this embodiment, the main power loop power supply device 13 needs to output current and voltage to ensure that the output voltage and current can meet the test requirements. In this embodiment, the main power loop power supply device 13 uses a high-power DC power supply or a mobile battery pack during the test to provide a loop with instantaneous high current for the test of the test platform circuit board 12; in actual use, the main power loop power supply device 13 can be arbitrarily set according to needs, not limited to this embodiment.

[0055] like Figure 1 As shown, the control module 15 is used to generate a current control signal.

[0056] like Figure 3 As shown, the control module 15 includes a control unit 151 and a USB communication unit 152; the control unit 151 is used to generate a current control signal; the USB communication unit 152 is connected to the control unit 151, and is used to transmit the current control signal to the DC electronic load 14.

[0057] Specifically, in this embodiment, the control unit 151 is implemented by a computer, and the current value and the flow time required for the test are set by the upper computer program of the computer. In actual use, the control unit 151 can be set arbitrarily according to the test requirements, not limited to this embodiment. In this embodiment, the USB communication unit 152 is used to realize communication. In actual use, any communication method that can transmit the current control signal to the DC electronic load 14 is applicable to the present invention, and will not be described one by one here. In this embodiment, the current control signal is used to control the current output by the DC electronic load 14 and the duration of the loading current.

[0058] like Figure 1 As shown, the DC electronic load 14 is connected to the main power circuit power supply device 13 and the output end of the control module 15 , and generates the current signal required for the test based on the output signal of the DC power supply and the control module 15 .

[0059] Specifically, in this embodiment, the DC electronic load 14 includes a USB communication interface for receiving the current control signal generated by the control module 15. In actual use, any communication interface that can be connected to the communication unit in the control module 15 is applicable to the present invention and will not be described in detail here.

[0060] Specifically, in this embodiment, the DC electronic load 14 is connected to the USB communication line through the USB communication interface to receive the current control signal generated by the control module 15 , and the current is output to the test platform circuit board 12 through the DC electronic load 14 .

[0061] like Figure 2 As shown, the test platform circuit board 12 is connected to the DC electronic load 14 and the output end of the driving circuit 11, and a current limit test is performed on the channel of the MOS tube to be tested based on the current signal provided by the DC electronic load 14 under the drive of the driving power supply.

[0062] Specifically, Figure 2 As shown, the test platform circuit board 12 includes: a MOS tube Q1 to be tested, a current detection device 121, a voltage detection device 122 and a detection value display device 123. In this embodiment, the gate of the MOS tube Q1 to be tested is connected to the driving power supply VCC, the drain of the MOS tube Q1 to be tested is connected to the DC electronic load 14, and the source of the MOS tube Q1 to be tested is connected to the main power circuit power supply device 13 with a common ground GND, so as to realize the current backflow to the main power circuit power supply device 13, thereby forming a complete test circuit. The current detection device 121 is arranged between the drain of the MOS tube Q1 to be tested and the DC electronic load 14, and is used to detect the drain current of the MOS tube Q1 to be tested; as an example, the current detection device 121 is arranged as a sampling resistor, one end of which is connected to the drain of the MOS tube Q1 to be tested, and the other end is connected to the DC electronic load 14; as another example, the current detection device 121 is arranged as a current sensor, and the current sensor surrounds the wire connecting the drain of the MOS tube Q1 to be tested and the DC electronic load 14; in actual application, the current detection device 121 can be arranged as any device capable of detecting the drain current of the MOS tube Q1 to be tested according to the test requirements, and is not limited to this embodiment. The voltage detection device 122 is connected in parallel between the drain and source of the MOS tube Q1 to be tested, and is used to detect the drain-source voltage of the MOS tube Q1 to be tested. The detection value display device 123 is connected to the output ends of the current detection device 121 and the voltage detection device 122, and is used to display the drain current, drain-source voltage and flow time of the MOS tube Q1 to be tested; in this embodiment, the experimental instrument used by the detection value display device 123 is an oscilloscope, and the waveform diagram displayed by the oscilloscope can intuitively present the drain current, drain-source voltage, failure condition and failure time of the MOS tube Q1 to be tested. In actual use, the detection value display device 123 can be set to any device that can display the drain current and drain-source voltage of the MOS tube Q1 to be tested according to test requirements, and is not limited to this embodiment.

[0063] like Figure 2As shown, in this embodiment, the test platform circuit board 12 also includes a protection module 124, and the protection module 124 is arranged between the driving power supply VCC and the gate of the MOS tube Q1 to be tested, and is used to protect the MOS tube Q1 to be tested. As an example, the protection module 124 includes an anti-reverse diode D1, a first resistor R1 and a second resistor R2, the anode of the anti-reverse diode D1 is connected to the driving power supply VCC, and the cathode of the anti-reverse diode D1 is connected to one end of the first resistor R1; the other end of the first resistor R1 is connected to the gate of the MOS tube Q1 to be tested; one end of the second resistor R2 is connected to the gate of the MOS tube Q1 to be tested, and the other end is grounded. In actual use, any circuit structure that can protect the MOS tube Q1 to be tested is applicable to the protection module 124, not limited to this embodiment.

[0064] As another implementation of the present invention, the test platform circuit board 12 also includes a test socket, the lower half of the pin of the MOS tube Q1 to be tested is connected to the test socket, the upper half is exposed, and only the pin is electrically connected, so that the MOS tube Q1 to be tested is in a suspended state. Specifically, the MOS tube Q1 to be tested includes a chip body and a pin, wherein the pin is arranged below the chip body, the lower half of each pin is inserted into the corresponding jack of the test socket, and the chip body and the upper half of the pin are exposed and do not contact the test socket. Such a connection method makes the chip body of the MOS tube Q1 to be tested in a suspended state, thereby avoiding the MOS tube Q1 to be tested from heating up during the test process to affect the test results, and can fully and truly reflect the current limit range of the channel of the MOS tube Q1 to be tested.

[0065] like Figure 1 to Figure 2 As shown, the present invention further provides a MOS tube testing method, which is implemented based on the above-mentioned MOS tube testing device 1. The MOS tube testing method includes: providing a set current to the MOS tube Q1 to be tested, and detecting whether the MOS tube Q1 to be tested fails within a set time; if the MOS tube Q1 to be tested fails, the set current is the limit current value of the MOS tube Q1 to be tested; if the MOS tube Q1 to be tested does not fail, increasing the set current and re-detecting whether the MOS tube Q1 to be tested fails within the set time; or providing a constant current to the MOS tube Q1 to be tested, and detecting the failure time of the MOS tube Q1 to be tested.

[0066] As an implementation of the present invention, in this embodiment, the control unit 151 is connected to the USB communication interface of the DC electronic load 14 through the USB communication unit.

[0067] Specifically, the current limit (maximum current value) within the set current time is tested as follows:

[0068] In this embodiment, the control unit 151 sets the flow time (for example, the flow time is set to 60s) and the current size, and transmits the current control signal to the DC electronic load 14. The DC electronic load 14 generates the first current value required for the test based on the DC power supply and the signal output by the control module 15. The first current value flows through the MOS tube Q1 to be tested within the set flow time (60s), and the detection value display device 123 is used to check whether the MOS tube Q1 to be tested fails. If the curve of the drain-source voltage changing with time shown in the waveform diagram on the detection value display device 123 shows a sudden increase and a sharp decrease, the MOS tube Q1 to be tested fails at this time, and the first current value is the flow limit value of the MOS tube Q1 to be tested within the set flow time (60s). If it is not failed, the control unit 151 is set to increase the first current value to the second current value, the set flow time (60s) remains unchanged, the second current value flows through the MOS transistor Q1 to be tested within the set flow time (60s), and then check whether the MOS transistor Q1 to be tested is failed; if the MOS transistor Q1 to be tested is failed, the second current value is the flow limit value of the MOS transistor Q1 to be tested within the flow time (60s), if it is not failed, the control unit 151 continues to increase the second current value to the third current value, and re-check whether the MOS transistor Q1 to be tested is failed within the set flow time (60s); until the curve of the drain-source voltage changing with time presented in the waveform diagram on the detection value display device 123 suddenly increases and then drops sharply, at this time, the MOS transistor Q1 to be tested is failed, and the corresponding current value is the flow limit value of the MOS transistor Q1 to be tested that fails within the preset flow time (60s).

[0069] Since there is a capacitor in the actual application circuit, there is a difference between the drain current of the MOS tube Q1 to be tested detected by the current detection device 121 and the current value set by the control module 15. Therefore, in the actual test process, the current limit value for judging the failure of the MOS tube Q1 to be tested is determined by checking the current value displayed by the detection value display device 123.

[0070] Specifically, the current limit (maximum current time) of the set current is tested as follows:

[0071] In this embodiment, the control unit 151 sets the current (as an example, the current value is configured to be 200 mA) and the flow time (at this time, the flow time is greater than the failure time of the MOS tube to be tested), and the current control signal is transmitted to the DC electronic load 14. The DC electronic load 14 generates a preset current of 200 mA required for the test based on the DC power supply and the signal output by the control module 15. The preset current (200 mA) flows through the MOS tube to be tested Q1 within the flow time, and a curve of the drain-source voltage varying with time presented on the detection value display device 123 shows a turning point where the drain-source voltage suddenly rises and then drops sharply. At this time, the time interval from the time when the voltage is applied to the time when the turning point is generated is the failure time of the MOS tube to be tested Q1 when the current is 200 mA, that is, the entire test is completed.

[0072] In actual use, the flow time and the current value can be set according to the models of MOS tubes with different specifications for testing, and are not limited to this embodiment.

[0073] In summary, the present invention provides a MOS tube testing device and testing method, including: a driving circuit, a test platform circuit board, a main power loop power supply device, a DC electronic load and a control module; the driving circuit is connected to the test platform circuit board to provide a driving power supply for the MOS tube to be tested; the main power loop power supply device is used to provide a DC power supply for the test platform circuit board; the control module is used to generate a current control signal; the DC electronic load is connected to the output end of the main power loop power supply device and the control module, and generates a current signal required for the test based on the output signal of the DC power supply and the control module; the test platform circuit board is connected to the DC electronic load and the output end of the driving circuit, and under the drive of the driving power supply, a current limit test is performed on the channel of the MOS tube to be tested based on the current signal provided by the DC electronic load. The present invention completely and truly tests the through-current limit range of the MOS tube channel itself, improves the reliability of the MOS tube in practical applications, and reduces the failure rate caused by channel overcurrent; at the same time, the test platform circuit board used in the present invention is relatively simple to manufacture and costs less than 100 yuan. In addition, the three parts of the equipment, namely, the driving power supply, the main power circuit power supply equipment, the DC electronic load and the control module, are common laboratory test equipment and can be used for other test items. The equipment utilization rate is high and the cost of the test equipment is reduced. Therefore, the present invention effectively overcomes various shortcomings in the prior art and has a high industrial utilization value.

[0074] The above embodiments are merely illustrative of the principles and effects of the present invention, and are not intended to limit the present invention. Anyone familiar with the art may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by a person of ordinary skill in the art without departing from the spirit and technical concept disclosed by the present invention shall still be covered by the claims of the present invention.

Claims

1. A MOS tube testing device, characterized in that: The MOS tube test device comprises: a drive circuit, a test platform circuit board, a main power loop power supply device, a DC electronic load and a control module; The driving circuit is used to provide driving power; The main power circuit power supply device is used to provide a DC power supply; The control module is used to generate a current control signal; The DC electronic load is connected to the main power circuit power supply device and the output end of the control module, and generates a current signal required for the test based on the output signal of the DC power supply and the control module; The test platform circuit board is connected to the DC electronic load and the output end of the driving circuit, and performs a through-current limit test on the channel of the MOS tube to be tested based on the current signal provided by the DC electronic load under the drive of the driving power supply; wherein the test platform circuit board includes: the MOS tube to be tested, a current detection device, a voltage detection device and a detection value display device; The gate of the MOS tube to be tested is connected to the driving power supply, the drain of the MOS tube to be tested is connected to the DC electronic load, and the source of the MOS tube to be tested is grounded with the main power circuit power supply device; the current detection device is arranged between the drain of the MOS tube to be tested and the DC electronic load, and is used to detect the drain current of the MOS tube to be tested; the voltage detection device is connected in parallel between the drain and the source of the MOS tube to be tested, and is used to detect the drain-source voltage of the MOS tube to be tested; the detection value display device is connected to the output ends of the current detection device and the voltage detection device, and is used to display the drain current, drain-source voltage and flow time of the MOS tube to be tested.

2. The MOS tube testing device according to claim 1, characterized in that: The test platform circuit board also includes a protection module, which is arranged between the driving power supply and the MOS tube to be tested and is used to protect the MOS tube to be tested.

3. The MOS tube testing device according to claim 2, characterized in that: The protection module includes an anti-reverse diode D1, a first resistor R1 and a second resistor R2, wherein the anode of the anti-reverse diode D1 is connected to the driving power supply, and the cathode of the anti-reverse diode D1 is connected to one end of the first resistor R1; the other end of the first resistor R1 is connected to the gate of the MOS tube to be tested; one end of the second resistor R2 is connected to the gate of the MOS tube to be tested, and the other end is grounded.

4. The MOS tube testing device according to claim 1, characterized in that: The test platform circuit board also includes a test socket, the lower half of the pin of the MOS tube to be tested is connected to the test socket, and the upper half is exposed to the outside, so that the MOS tube to be tested is in a suspended state.

5. The MOS tube testing device according to claim 1, characterized in that: The DC electronic load includes a USB communication interface for receiving the current control signal generated by the control module.

6. The MOS tube testing device according to claim 1 or 5, characterized in that: The control module includes a control unit and a USB communication unit; the control unit is used to generate a current control signal; the USB communication unit is connected to the control unit and is used to transmit the current control signal to the DC electronic load.

7. A MOS tube testing method, implemented based on the MOS tube testing device according to any one of claims 1 to 6, characterized in that: The MOS tube testing method at least includes: Providing a set current to the MOS tube to be tested, and detecting whether the MOS tube to be tested fails within a set time; if the MOS tube to be tested fails, the set current is the limit current value of the MOS tube to be tested; if the MOS tube to be tested does not fail, increasing the set current and re-detecting whether the MOS tube to be tested fails within the set time; Alternatively, a constant current is provided to the MOS tube to be tested to detect the failure time of the MOS tube to be tested.

8. The MOS tube testing method according to claim 7, characterized in that: Whether the MOS tube to be tested fails is determined based on the drain-source voltage of the MOS tube to be tested.

9. The MOS tube testing method according to claim 8, characterized in that: The failure time starts from the application of voltage to the turning point where the drain-source voltage of the MOS tube to be tested increases and then decreases.

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