Photoetching pattern error correction method and correction device

Abstract

The invention provides a photoetching pattern error correction method and correction device. The photoetching pattern error correction method comprises the steps that a light drawing paper comprising a plurality of transverse lines and vertical lines is designed, and the transverse lines and the vertical lines cover splicing positions and non-splicing positions between DMDs of an exposure machine; then the plate covered with the photoresist layer is placed on a working table of an exposure machine, and a light drawing paper is loaded into a DMD imaging system; and further starting an exposure program of the exposure machine, obtaining a line width variation and an exposure energy variation of each DMD based on the light drawing paper, completing DMD energy correction according to the line width variation and the exposure energy variation, and completing DMD splicing correction according to the line width variation. According to the invention, whether the production state is normal or not can be rapidly monitored, the test time is greatly saved, and the production efficiency is improved; moreover, the measurement precision is high, and the control of the production process is facilitated.

Description

Technical Field

[0001] The present application relates to the technical field of error correction, and in particular to a method and device for correcting photolithography pattern errors. Background Art

[0002] Currently, one of the common practices in the industry for monitoring exposure accuracy is to develop after exposure, and then use a microscope to measure the width of the photoresist layer after development. The measured results are then compared with the actual design results to determine whether the exposure parameters are normal. If the measured results differ greatly from the actual design, the exposure parameters need to be readjusted and the above steps need to be repeated for verification. This process will waste a lot of time and is inefficient.

[0003] Another approach is to perform an exposure scale test. The principle of this method is that for the same dry film, as long as the number of grids on the exposure scale is the same after exposure, the width of the photoresist layer after exposure can be considered consistent with the design value. The process steps of this method are also to expose first, then develop, and finally compare the number of energy grids on the exposure scale with the required value (the required value is generally a range) to see if they are consistent. If not, the exposure parameters are considered abnormal and need to be adjusted and optimized and re-verified. Because this method is compared with the naked eye and the required value is a range, this will lead to large fluctuations in line width during the production process, which is not conducive to the precision control of fine lines and is not conducive to the management and control of mass production. Summary of the Invention

[0004] In order to solve the above technical problems, the present application provides a photolithography pattern error correction method and correction device that can improve production efficiency and measurement accuracy.

[0005] Specifically, the present application provides a method for correcting photolithography pattern errors, comprising the following steps: Designing a photolithography drawing, wherein the photolithography drawing includes a plurality of horizontal lines and vertical lines, and the horizontal lines and vertical lines cover the splicing positions and non-splicing positions between the DMDs of the exposure machine; placing a plate covered with a photoresist layer on a work surface of the exposure machine, and loading the photolithography drawing into a DMD imaging system; and starting an exposure program of the exposure machine, obtaining a line width variation and an exposure energy variation of each DMD based on the photolithography drawing, so as to complete a DMD energy correction according to the line width variation and the exposure energy variation, and completing a DMD splicing correction according to the line width variation.

[0006] In the above technical solution, the width of the photoresist layer can be measured immediately after the board is exposed. There is no need to take the board out of the exposure machine for measurement, nor is it necessary to measure it after development. The normal production status can be quickly monitored, which greatly saves test time and improves production efficiency. Compared with the exposure ruler test, this method is not only more efficient, but also has higher measurement accuracy, which is more conducive to production process control.

[0007] Furthermore, the widths of the horizontal lines and the vertical lines are respectively a first preset micrometer and a second preset micrometer, the length of the horizontal lines is the maximum width of the DMD exposure area, and the length of the vertical lines is a preset millimeter.

[0008] In the above technical solution, setting the line width provides a unified standard, so that each DMD can be evaluated and compared under the same benchmark, making the measurement results comparable and accurate, and providing a reliable data basis for subsequent correction work.

[0009] Furthermore, the DMD imaging system includes several movable DMDs, and each DMD is controlled by a high-precision moving platform to move along the x and y directions of the plane.

[0010] In the above technical solution, because multiple DMD lenses are responsible for exposing different areas during the photolithography process, the stitching positions between the lenses are prone to errors, affecting the final image quality. The DMD that can move at the micron level allows the lenses to be moved precisely for subsequent correction.

[0011] Furthermore, before loading the optical drawing paper into the DMD imaging system, the method further includes: gridding the optical drawing paper.

[0012] In the above technical solution, gridding divides the photolithography paper into numerous tiny grid units, each of which can serve as an independent exposure control unit. During the photolithography process, the DMD imaging system can precisely control whether each grid is exposed and the exposure energy level.

[0013] Furthermore, the obtaining of the line width variation and exposure energy variation of each DMD includes: after the exposure program completes the exposure, starting a high-precision CCD measuring device to obtain the current line width of each DMD; comparing the current line width of each DMD with the line width designed in the photolithography paper through preset software to obtain the line width variation, and obtaining the exposure energy variation of each DMD based on the line width variation.

[0014] In the above technical solution, the high-precision CCD measuring device includes a CCD camera, a lens and a light source system. The wavelength range of the light source is between 570-600nm to protect the photoresist layer from reacting with the light source and causing failure. The high-precision CCD measuring device can measure the size of micron-level objects with a measurement accuracy of 1μm, and the high-precision CCD measuring device can automatically grab and measure objects at any specified position on the photographic drawing paper.

[0015] Furthermore, the DMD energy correction is completed, including: performing function fitting using the exposure energy change as an independent variable and the line width change as a dependent variable to obtain a functional relationship between the exposure energy change and the line width change, so as to correct the exposure energy of each DMD according to the functional relationship and the exposure energy of the exposure program.

[0016] In the above technical solution, the DMD exposure energy is adjusted based on a functional relationship between the change in line width at different energy intensities. The functional relationship varies for different types of photoresist layers and is obtained through function fitting. This makes the exposure energy correction more accurate and efficient.

[0017] Furthermore, for horizontal lines, the DMD stitching correction is completed, including: if the stitching between the same DMD is misaligned, the position of the exposure machine moving platform is adjusted based on the line width change and the misalignment direction; if the stitching between different DMDs is misaligned, the position of the DMD is adjusted through a high-precision moving platform based on the line width change and the misalignment direction.

[0018] In the above technical solution, the movement of the exposure machine moving platform can drive the entire DMD to fine-tune its position within a large range, and since it is aimed at the misalignment within the same DMD, the line width change and the misalignment direction can accurately reflect the position deviation of the DMD during the exposure process. By accurately analyzing this information to adjust the exposure machine moving platform, the problem of splicing misalignment within the same DMD can be accurately solved, making the line splicing within the same DMD more accurate, reducing defects such as line discontinuity and width inconsistency, and improving the quality of the lithography pattern within the same DMD area; the high-precision moving platform can achieve micron-level or even smaller displacement accuracy. For the splicing between different DMDs, it can make fine adjustments based on the line width change and the misalignment direction. Because the splicing between different DMDs may have more subtle position deviations, the high-precision moving platform can more flexibly calibrate the position of each DMD separately to ensure smooth line transitions at the splicing between different DMDs, avoiding problems such as splicing gaps or overlaps, thereby improving the quality of the splicing of the entire lithography pattern across DMDs.

[0019] Furthermore, for vertical lines, the DMD stitching correction is completed, including: if there is a line size error between the same DMD, adjusting the position of the exposure machine moving platform based on the line width change and the size error state; if there is a line size error between different DMDs, adjusting the position of the DMD through a high-precision moving platform based on the line width change and the size error state; wherein the size error state includes the current line width being greater than the line width designed in the photolithography paper, and the current line width being less than the line width designed in the photolithography paper.

[0020] In the above technical solution, vertical lines are also corrected by using an exposure machine mobile platform or a high-precision mobile platform, with high correction accuracy. At the same time, the line width change and dimensional error are accurately analyzed before correction, which further improves the correction accuracy and improves the quality of the lithography graphics.

[0021] Furthermore, based on the same concept, the present application also provides a lithography pattern error correction device, comprising: An exposure machine is used to expose a plate covered with a photoresist layer to obtain the line width variation and exposure energy variation of each DMD based on the photo-drawing paper loaded into the DMD imaging system; wherein the photo-drawing paper includes a plurality of horizontal lines and vertical lines, and the horizontal lines and vertical lines cover the splicing positions and non-splicing positions between the DMDs of the exposure machine; and is also used to complete DMD energy correction based on the line width variation and exposure energy variation.

[0022] The exposure machine moving platform is used to complete the stitching correction between the same DMD based on the line width change.

[0023] And, a high-precision mobile platform is used to complete the stitching correction between different DMDs based on the change in line width.

[0024] Furthermore, the correction device also includes: a host computer installed with preset software, used to compare the current line width of each DMD with the line width designed in the photolithography paper to obtain the line width change; and also used to obtain the exposure energy change of each DMD based on the line width change.

[0025] In the above technical solution, the photolithography pattern error correction is achieved through the mutual cooperation of the above components, the pattern consistency and accuracy are improved, and after the board is exposed, there is no need to take the board out of the exposure machine for measurement, nor is it necessary to measure it after development. The production status can be quickly monitored to see if it is normal, which greatly saves test time and improves production efficiency.

[0026] Compared with the prior art, the present invention has the following advantages: The present application first designs a photolithography drawing including a number of horizontal and vertical lines, wherein the horizontal and vertical lines cover the splicing positions and non-splicing positions between the DMDs of the exposure machine; then places a plate covered with a photoresist layer on the work surface of the exposure machine, and loads the photolithography drawing into the DMD imaging system; further starts the exposure program of the exposure machine, and then obtains the line width variation and exposure energy variation of each DMD based on the photolithography drawing, so as to complete the DMD energy correction according to the line width variation and exposure energy variation, and complete the DMD splicing correction according to the line width variation. The present application can quickly monitor whether the production status is normal, greatly saving test time and improving production efficiency; and the measurement accuracy is high, which is more conducive to production process control. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] Figure 1 This is a flow chart of the photolithography pattern error correction method described in this application.

[0028] Figure 2 This is a schematic diagram of the relationship between the exposure energy variation and the line variation described in this application.

[0029] Figure 3 This is a schematic diagram of the misalignment situation described in this application.

[0030] Figure 4 This is a schematic diagram of a preferred embodiment of the misalignment situation described in this application.

[0031] Figure 5 This is a schematic diagram of the dimensional error described in this application.

[0032] Figure 6 This is a schematic diagram of a preferred embodiment of the dimensional error situation described in this application.

[0033] Figure 7 This is a connection diagram of the photolithography pattern error correction device described in this application. DETAILED DESCRIPTION

[0034] A photolithography pattern error correction method and correction device of the present application will be further described in detail below with reference to specific embodiments and drawings.

[0035] See Figure 1 , the present application provides a method for correcting photolithography pattern errors, comprising the following steps S100-S300.

[0036] The following describes each step S100-S300 in detail.

[0037] S100: Designing a photolithography drawing paper, wherein the photolithography drawing paper includes a plurality of horizontal lines and vertical lines, and the horizontal lines and vertical lines cover the splicing positions and non-splicing positions between the DMDs of the exposure machine.

[0038] Furthermore, the widths of the horizontal lines and the vertical lines are respectively a first preset micrometer and a second preset micrometer, the length of the horizontal lines is the maximum width of the DMD exposure area, and the length of the vertical lines is a preset millimeter.

[0039] In a feasible embodiment, the width of the horizontal lines varies from tens of microns, and the length is the maximum width of the DMD exposure area; the width of the vertical lines varies from tens of microns, and the joints just divide the line width equally, and the length varies from several millimeters.

[0040] It should be noted that those skilled in the art can set the width and length of the above horizontal lines and vertical lines according to actual application requirements, and are not restricted here.

[0041] In the above technical solution, setting the line width provides a unified standard, so that each DMD can be evaluated and compared under the same benchmark, making the measurement results comparable and accurate, and providing a reliable data basis for subsequent correction work.

[0042] S200: placing a plate covered with a photoresist layer on a work surface of the exposure machine, and loading the photolithography paper into a DMD imaging system.

[0043] Furthermore, the DMD imaging system includes several movable DMDs, and each DMD is controlled by a high-precision moving platform to move along the x and y directions of the plane.

[0044] In the above technical solution, because multiple DMD lenses are responsible for exposing different areas during the photolithography process, the stitching positions between the lenses are prone to errors, affecting the final image quality. The DMD that can move at the micron level allows the lenses to be moved precisely for subsequent correction.

[0045] Furthermore, before loading the optical drawing paper into the DMD imaging system, the method further includes: gridding the optical drawing paper.

[0046] In a feasible embodiment, the photolithography paper is divided into grids of appropriate sizes according to the accuracy of the photolithography equipment, for example, 1 μm*1 μm; each grid is treated as an independent unit, and the gridding makes it easier to detect defects on the photolithography paper.

[0047] In the above technical solution, gridding divides the photolithography paper into numerous tiny grid units, each of which can serve as an independent exposure control unit. During the photolithography process, the DMD imaging system can precisely control whether each grid is exposed and the exposure energy level.

[0048] S300: Start the exposure program of the exposure machine, obtain the line width change and exposure energy change of each DMD based on the photolithography paper, complete DMD energy correction according to the line width change and exposure energy change, and complete DMD splicing correction according to the line width change.

[0049] Furthermore, the obtaining of the line width variation and exposure energy variation of each DMD includes: after the exposure program completes the exposure, starting a high-precision CCD measuring device to obtain the current line width of each DMD; comparing the current line width of each DMD with the line width designed in the photolithography paper through preset software to obtain the line width variation, and obtaining the exposure energy variation of each DMD based on the line width variation.

[0050] In a feasible embodiment, the high-precision CCD measuring device is installed on a marble gantry in an exposure machine, and the gantry is connected to the high-precision CCD measuring device through a first guide rail and a second guide rail. The first guide rail can be controlled by a host computer to move the high-precision CCD measuring device along the horizontal (x-axis) direction of the guide rail. The second guide rail is installed above the first guide rail, and the high-precision CCD measuring device can be controlled by the host computer to move along the vertical (z-axis) direction of the guide rail.

[0051] Among them, the high-precision CCD measuring device includes a CCD camera, a lens and a light source system; the lens is installed on the CCD camera, and the lens can be electrically zoomed and automatically zoomed. The light source system is a yellow light source, the light source intensity can be adjusted according to measurement needs, and the light source wavelength range is between 570-600nm.

[0052] Furthermore, several panels covered with photoresist layers are exposed using designed photolithography paper, and different panels are exposed using different exposure energies. After exposure, the line width of each panel is measured using the high-precision CCD measuring device. After the measurement is completed, the preset software of the host computer will automatically compare the actual measurement results of each DMD normal position line (i.e., the current line width) with the line width of the designed photolithography paper, and give the line width change.

[0053] In the above technical solution, the wavelength range of the light source is between 570-600nm to protect the photoresist layer from reacting with the light source and causing failure, and the high-precision CCD measuring device can measure the size of micron-level objects with a measurement accuracy of 1μm, and the high-precision CCD measuring device can automatically grasp and measure objects at any specified position on the photolithography paper.

[0054] Furthermore, the DMD energy correction is completed, including: performing function fitting using the exposure energy change as an independent variable and the line width change as a dependent variable to obtain a functional relationship between the exposure energy change and the line width change, so as to correct the exposure energy of each DMD according to the functional relationship and the exposure energy of the exposure program.

[0055] In a feasible embodiment, the exposure energy variation of each panel in the historical data is used as the independent variable and the line variation is used as the dependent variable to perform function fitting, and the functional relationship between the exposure energy variation and the line variation is obtained, as shown in FIG. Figure 2 shown.

[0056] Among them, ΔEn-1= En- En-1, ΔLn-1= Ln- Ln-1; use ΔEn-1 as the independent variable x and ΔLn-1 as the dependent variable y for function fitting, and we get y=f(x).

[0057] Furthermore, DMD exposure energy correction includes correcting the consistency between the lines designed by photo-drawing and the lines produced by photolithography, and correcting the energy differences between each DMD.

[0058] Among them, the line width change of each DMD is substituted into the fitting function relationship y=f(x) to solve the exposure energy change corresponding to each DMD; then the exposure energy of the corresponding DMD is adjusted according to the calculated exposure energy change and the exposure energy of the current exposure program.

[0059] If ΔEn-1>0, the exposure energy of the DMD is increased by ΔEn-1; if ΔEn-1<0, the exposure energy of the DMD is increased or decreased by |ΔEn-1|; through this adjustment, the exposure energy of each DMD is made consistent, thereby eliminating the problem of inconsistent lithography line width caused by energy difference.

[0060] In the above technical solution, the DMD exposure energy is adjusted based on a functional relationship between the change in line width at different energy intensities. The functional relationship varies for different types of photoresist layers and is obtained through function fitting. This makes the exposure energy correction more accurate and efficient.

[0061] Furthermore, for horizontal lines, the DMD stitching correction is completed, including: if the stitching between the same DMD is misaligned, the position of the exposure machine moving platform is adjusted based on the line width change and the misalignment direction; if the stitching between different DMDs is misaligned, the position of the DMD is adjusted through a high-precision moving platform based on the line width change and the misalignment direction.

[0062] In a feasible embodiment, the splicing correction includes misalignment correction and size error correction; splicing misalignment refers to the misalignment of graphics or lines at the splicing position. Figure 3 Several possible situations are shown in FIG.

[0063] Among them, see Figure 4 , taking DMD01 as the benchmark, let the deviation of other area lines compared with DMD001 be δ, and the upward deviation compared with DMD01 be recorded as -δ, and the reverse deviation be recorded as +δ, to reflect the misalignment direction; start the high-precision CCD measuring device to measure the misalignment errors of DMD01', DMD02, DMD02', DMD03, DMD03'.... compared with DMD01 and record them as δ1, δ2, δ3, δ4, δ5.... respectively; add δ1, δ3, δ5, δ6 to the y-axis of the exposure area graphic coordinates of DMD01', DMD02', DMD03'... respectively. δ7, δ9.... perform compensation correction, that is, the misalignment correction is completed by adjusting the exposure machine moving platform; the high-precision moving platforms corresponding to DMD2, DMD03, DMD04... are respectively controlled to adjust δ2, δ4, δ6, δ8, δ10... unit distances along the y-axis direction for correction, with negative values ​​adjusted along the negative direction of the y-axis and positive values ​​adjusted along the y-axis direction; at this point, the misalignment correction is completed.

[0064] It should be noted that Figure 4 Only part of the DMD is shown.

[0065] In the above technical solution, the movement of the exposure machine moving platform can drive the entire DMD to fine-tune its position within a large range, and since it is aimed at the misalignment within the same DMD, the line width change and the misalignment direction can accurately reflect the position deviation of the DMD during the exposure process. By accurately analyzing this information to adjust the exposure machine moving platform, the problem of splicing misalignment within the same DMD can be accurately solved, making the line splicing within the same DMD more accurate, reducing defects such as line discontinuity and width inconsistency, and improving the quality of the lithography pattern within the same DMD area; the high-precision moving platform can achieve micron-level or even smaller displacement accuracy. For the splicing between different DMDs, it can make fine adjustments based on the line width change and the misalignment direction. Because the splicing between different DMDs may have more subtle position deviations, the high-precision moving platform can more flexibly calibrate the position of each DMD separately to ensure smooth line transitions at the splicing between different DMDs, avoiding problems such as splicing gaps or overlaps, thereby improving the quality of the splicing of the entire lithography pattern across DMDs.

[0066] Furthermore, for vertical lines, the DMD stitching correction is completed, including: if there is a line size error between the same DMD, adjusting the position of the exposure machine moving platform based on the line width change and the size error state; if there is a line size error between different DMDs, adjusting the position of the DMD through a high-precision moving platform based on the line width change and the size error state; wherein the size error state includes the current line width being greater than the line width designed in the photolithography paper, and the current line width being less than the line width designed in the photolithography paper.

[0067] In a feasible embodiment, the size error refers to the inconsistency between the line width at the splicing position and the line width at the non-splicing position. Figure 5 Several possible situations are shown in FIG.

[0068] Among them, see Figure 6 , start the high-precision CCD measuring device to measure the line width a at the non-stitching position (multiple measurements can be taken and the average is taken); then measure the line width b at the stitching positions DMD0101, DMD0202, DMD0303..., and then subtract the line width at the non-stitching position from the line width of each stitching position value, obtaining the line width at each stitching position and recording it as β1, β3, β5...; β1, β3, β5... are added to the x-axis of the exposure area graphic coordinates of DMD01', DMD02', DMD03'... respectively for compensation correction.

[0069] To account for line size errors between different DMDs, another substrate with photoresist film is exposed according to the designed photolithography drawing. A high-precision CCD measuring device is activated to measure the line widths c at the splicing positions DMD0102, DMD0203, DMD0304, etc. The line widths at the non-splicing positions are then subtracted from the line widths at each splicing position, yielding line widths at each splicing position as β2, β4, β6, etc. The high-precision motion platforms for DMD2, DMD03, DMD04, etc. are respectively adjusted by δ2, δ4, δ6, etc. unit distances along the x-axis for correction. Positive values ​​are adjusted in the negative x-axis direction, and negative values ​​are adjusted in the positive x-axis direction. This completes the size error correction.

[0070] It should be noted that Figure 6 Only part of the DMD is shown.

[0071] In the above technical solution, vertical lines are also corrected by using an exposure machine mobile platform or a high-precision mobile platform, with high correction accuracy. At the same time, the line width change and dimensional error are accurately analyzed before correction, which further improves the correction accuracy and improves the quality of the lithography graphics.

[0072] Furthermore, after the above DMD exposure energy correction and stitching correction, the misalignment error and size error are greatly reduced, which can greatly improve the accuracy of the lithography pattern and the line consistency of the pattern.

[0073] Further, based on the same concept, see Figure 7 , the present application also provides a lithography pattern error correction device, comprising: An exposure machine is used to expose a plate covered with a photoresist layer to obtain the line width variation and exposure energy variation of each DMD based on the photo-drawing paper loaded into the DMD imaging system; wherein the photo-drawing paper includes a plurality of horizontal lines and vertical lines, and the horizontal lines and vertical lines cover the splicing positions and non-splicing positions between the DMDs of the exposure machine; and is also used to complete DMD energy correction based on the line width variation and exposure energy variation.

[0074] The exposure machine moving platform is used to complete the stitching correction between the same DMD based on the line width change.

[0075] And, a high-precision mobile platform is used to complete the stitching correction between different DMDs based on the change in line width.

[0076] Furthermore, the correction device also includes: a host computer installed with preset software, used to compare the current line width of each DMD with the line width designed in the photolithography paper to obtain the line width change; and also used to obtain the exposure energy change of each DMD based on the line width change.

[0077] Among them, before loading the photolithography paper into the DMD imaging system, the photolithography paper needs to be gridded. The DMD imaging system includes several DMD lenses, each of which can be controlled by a high-precision mobile platform and can move at the micron level along the x and y directions of the plane in a limited space; the exposure program of the exposure machine realizes exposure, and after the exposure is completed, the high-precision CCD measuring device is started to measure the line width of each DMD normal position. After the measurement is completed, the actual measurement result of each DMD normal position line is automatically compared with the designed line width of the photolithography paper through the preset software of the upper computer, and the line width change is given.

[0078] Among them, function fitting is also performed based on the exposure energy change and line width change in the historical data, and then function fitting is performed with the exposure energy change ΔEn-1 as the independent variable x and the line width change ΔLn-1 as the dependent variable y, and the obtained y=f(x).

[0079] After comparing the line width change, substitute y = f (x) to get the exposure energy change of the DMD at this time, and adjust the exposure energy of the DMD according to the calculated exposure energy change and the exposure energy of the current exposure program.

[0080] Furthermore, stitching correction includes misalignment correction and size error correction.

[0081] Among them, for horizontal lines, if the same DMD is misaligned, the position of the exposure machine's moving platform is adjusted based on the line width change and the misalignment direction; if different DMDs are misaligned, the position of the DMD is adjusted based on the line width change and the misalignment direction through a high-precision moving platform.

[0082] For vertical lines, if there is a line size error between the same DMD, the position of the exposure machine's mobile platform is adjusted based on the line width change and the size error status; if there is a line size error between different DMDs, the position of the DMD is adjusted through a high-precision mobile platform based on the line width change and the size error status; wherein the size error status includes the current line width being greater than the line width designed in the photolithography paper, and the current line width being less than the line width designed in the photolithography paper.

[0083] In the above technical solution, the photolithography pattern error correction is achieved through the mutual cooperation of the above components, the pattern consistency and accuracy are improved, and after the board is exposed, there is no need to take the board out of the exposure machine for measurement, nor is it necessary to measure it after development. The production status can be quickly monitored to see if it is normal, which greatly saves test time and improves production efficiency.

[0084] In summary, the present application provides a method and device for correcting photolithographic pattern errors; first, a photolithographic drawing paper including a plurality of horizontal lines and vertical lines is designed, wherein the horizontal lines and vertical lines cover the splicing positions and non-splicing positions between the DMDs of the exposure machine; then, a plate covered with a photoresist layer is placed on the work surface of the exposure machine, and the photolithographic drawing paper is loaded into the DMD imaging system; further, the exposure program of the exposure machine is started, and then the line width variation and exposure energy variation of each DMD are obtained based on the photolithographic drawing paper, so as to complete the DMD energy correction according to the line width variation and the exposure energy variation, and complete the DMD splicing correction according to the line width variation. The present application can quickly monitor whether the production status is normal, greatly saves test time, and improves production efficiency; and the measurement accuracy is high, which is more conducive to production process control.

[0085] Although example embodiments have been described herein with reference to the accompanying drawings, it should be understood that the above example embodiments are merely illustrative and are not intended to limit the scope of the present application. Various changes and modifications may be made therein by those skilled in the art without departing from the scope and spirit of the present application. All such changes and modifications are intended to be included within the scope of the present application as required by the appended claims.

[0086] Those skilled in the art will appreciate that the units and algorithm steps of each example described in conjunction with the embodiments disclosed herein can be implemented in electronic hardware, or a combination of computer software and electronic hardware. Whether these functions are performed in hardware or software depends on the specific application and design constraints of the technical solution. Professional and technical personnel can use different methods to implement the described functions for each specific application, but such implementation should not be considered beyond the scope of this application.

[0087] In the several embodiments provided in this application, it should be understood that the disclosed devices and methods can be implemented in other ways. For example, the device embodiments described above are merely illustrative. For example, the division of the units described is merely a logical function division. In actual implementation, other division methods may be used, such as combining or integrating multiple units or components into another device, or ignoring or not performing some features.

[0088] The various component embodiments of the present application can be implemented in hardware, or in a software module running on one or more processors, or in a combination thereof. Those skilled in the art will appreciate that a microprocessor or digital signal processor (DSP) can be used in practice to implement some or all of the functions of some modules according to the embodiments of the present application. The application can also be implemented as a part or all of a device program (e.g., a computer program and a computer program product) for performing the method described herein. Such a program implementing the present application can be stored on a computer-readable medium, or can have the form of one or more signals. Such a signal can be downloaded from an Internet website, or provided on a carrier signal, or provided in any other form.

[0089] It should be noted that, in this document, relational terms such as first and second, etc., are used only to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply the existence of any such actual relationship or order between these entities or operations. Moreover, the terms "comprises," "comprising," or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article, or device comprising a series of elements includes not only those elements, but also other elements not explicitly listed, or elements inherent to such process, method, article, or device. In the absence of further limitations, an element defined by the phrase "comprising a ..." does not exclude the presence of other identical elements in the process, method, article, or device comprising the element.

[0090] Although the present application is described in conjunction with the above specific embodiments, it is obvious that those skilled in the art can make many substitutions, modifications and variations based on the above content. Therefore, all such substitutions, improvements and variations are included in the spirit and scope of the appended claims.

Claims

1. A method for correcting photolithography pattern errors, characterized in that: The following steps are involved: Designing a photolithography drawing paper, wherein the photolithography drawing paper includes a plurality of horizontal lines and vertical lines, and the horizontal lines and vertical lines cover the splicing positions and non-splicing positions between the DMDs of the exposure machine; Placing the plate covered with the photoresist layer on the working table of the exposure machine, and loading the photo-drawing paper into the DMD imaging system; And, start the exposure program of the exposure machine, obtain the line width change and exposure energy change of each DMD based on the photolithography paper, complete DMD energy correction according to the line width change and exposure energy change, and complete DMD splicing correction according to the line width change.

2. The method for correcting photolithography pattern errors according to claim 1, characterized in that: The widths of the horizontal lines and the vertical lines are respectively the first preset micrometer and the second preset micrometer, the length of the horizontal lines is the maximum width of the DMD exposure area, and the length of the vertical lines is the preset millimeter.

3. The method for correcting photolithography pattern errors according to claim 1, characterized in that: The DMD imaging system comprises a plurality of movable DMDs, each of which is controlled by a high-precision moving platform to move along the x and y directions of the plane.

4. The method for correcting photolithography pattern errors according to claim 1, characterized in that: Before loading the optical drawing paper into the DMD imaging system, the method further includes: rasterizing the optical drawing paper.

5. The method for correcting photolithography pattern errors according to claim 4, characterized in that: The obtaining of the line width variation and exposure energy variation of each DMD comprises: After the exposure procedure completes the exposure, a high-precision CCD measuring device is started to obtain the current line width of each DMD; The current line width of each DMD is compared with the line width designed in the light drawing paper through preset software to obtain the line width change, and the exposure energy change of each DMD is obtained according to the line width change.

6. The method for correcting photolithography pattern errors according to claim 5, characterized in that: The DMD energy correction is completed, including: The exposure energy change is taken as the independent variable and the line width change is taken as the dependent variable for function fitting to obtain a functional relationship between the exposure energy change and the line width change, so as to correct the exposure energy of each DMD according to the functional relationship and the exposure energy of the exposure program.

7. The method for correcting photolithography pattern errors according to claim 5, characterized in that: For the horizontal lines, the DMD stitching correction is completed, including: If the same DMD is misaligned, the position of the exposure machine moving platform is adjusted based on the line width change and the misalignment direction; If there is a misalignment between the splicing of different DMDs, the position of the DMD is adjusted through a high-precision mobile platform based on the line width change and the misalignment direction.

8. The method for correcting photolithography pattern errors according to claim 5, characterized in that: For vertical lines, the DMD stitching correction is completed, including: If there is a line size error between the same DMD, adjusting the position of the exposure machine moving platform based on the line width variation and the size error state; If there is a line size error between different DMDs, adjusting the position of the DMD through a high-precision mobile platform based on the line width variation and the size error state; The size error state includes that the current line width is greater than the line width designed in the optical drawing paper, and the current line width is less than the line width designed in the optical drawing paper.

9. A correction device using the photolithography pattern error correction method according to any one of claims 1 to 8, characterized in that: include: An exposure machine, used for exposing a plate covered with a photoresist layer, so as to obtain a line width variation and an exposure energy variation of each DMD based on a photo-drawing drawing loaded into a DMD imaging system; wherein the photo-drawing drawing includes a plurality of horizontal lines and vertical lines, and the horizontal lines and vertical lines cover a splicing position and a non-splicing position between each DMD of the exposure machine; and also used for completing DMD energy correction according to the line width variation and the exposure energy variation; The exposure machine moving platform is used to complete the stitching correction between the same DMD based on the line width variation; And, a high-precision mobile platform is used to complete the stitching correction between different DMDs based on the change in line width.

10. The calibration device according to claim 9, characterized in that: The correction device further comprises: A host computer with preset software is installed, which is used to compare the current line width of each DMD with the line width designed in the light drawing paper to obtain the line width change; and is also used to obtain the exposure energy change of each DMD based on the line width change.

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