Impact pit quantorization method and device, electronic equipment and storage medium

Abstract

The invention relates to the technical field of impact pits, in particular to an impact pit quantitative method and device, electronic equipment and a storage medium. Acquiring initial size information of a plurality of simulated impact pits generated by impact on the target object; the initial size information comprises an initial depth and an initial radius; obtaining the maximum stress value corresponding to each simulated impact pit; and according to the relationship between the initial depth and each maximum stress value and the relationship between the initial radius and each maximum stress value, generating a target equivalent relationship corresponding to the impact pit in the impact simulation. And the accuracy of the generated target equivalent relationship is ensured. And therefore, the impact pits in the impact simulation can be quantified. Therefore, the quantitative relationship between the size and stress characteristics between the non-standard impact simulation impact pit defect and the standard impact simulation impact pit defect can be established according to the target equivalent relationship.

Description

Technical Field

[0001] The present invention relates to the field of impact pit technology, and in particular to an impact pit equivalent method, device, electronic equipment and storage medium. Background Art

[0002] In the field of modern engineering, the performance and safety of mechanical load-bearing structural parts have attracted much attention. Traditionally, the service life of structural parts is mostly determined by the safe life method, which is based on the assumption that the structure is in an ideal state without defects for design and evaluation. However, in reality, structural parts will inevitably be affected by various factors and produce defects during their entire life cycle, from raw material processing to manufacturing process and then to commissioning. The existence of these defects has a significant impact on the performance and service life of structural parts, and may even endanger the safety of the structure.

[0003] The defect tolerance safe life design method has emerged as a more advanced and reliable design concept. Based on the safe life design method, it fully considers the defects and damages generated during the processing and manufacturing process and during the service life of the structural parts, so that it is closer to the actual working conditions and can more effectively predict the fatigue strength and service life of the structural parts. Among the many possible defect forms, impact defects are particularly common. The main scenarios for their occurrence include accidental collisions during processing operations and accidental drops of tools during maintenance. These situations often lead to impact simulation impact pit defects on the surface of parts.

[0004] The presence of impact simulated impact pit defects not only changes the geometric shape of the part surface, but more importantly, it will cause complex changes in the stress state in the local area of ​​the defect. Specifically, the impact simulated impact pit defects will cause local residual stress, and due to the sudden change in geometry, a stress concentration effect will be formed around the simulated impact pit. When the structural part is subjected to fatigue load, the local high stress field caused by the stress concentration effect and the residual stress field are superimposed on each other, jointly determining the local stress state of the simulated impact pit, which in turn has a key control effect on the fatigue life of the material.

[0005] Therefore, how to quantify the impact pits produced by impact simulation has become an urgent problem to be solved. Summary of the invention

[0006] In view of this, the present invention provides a method, device, electronic device and storage medium for impact pit equivalent quantity to solve the problem of impact pit equivalent quantity.

[0007] In a first aspect, the present invention provides a method for quantifying impact pits, the method comprising:

[0008] Acquire initial size information of a plurality of simulated impact pits generated by impacting a target object; the initial size information includes an initial depth and an initial radius;

[0009] Obtaining the maximum stress value corresponding to each simulated impact pit;

[0010] According to the relationship between the initial depth and the initial radius and each maximum stress value, a target equivalent relationship corresponding to the impact dent of the impact simulation is generated.

[0011] The impact pit equivalence method provided in the embodiment of the present application obtains the initial size information of multiple simulated impact pits generated by impacting the target object; obtains the maximum stress value corresponding to each simulated impact pit; generates the target equivalent relationship corresponding to the impact simulated impact pit according to the relationship between the initial depth and the initial radius and each maximum stress value, thereby ensuring the accuracy of the generated target equivalent relationship. This achieves the equivalence of the impact simulated impact pit. Therefore, a quantitative relationship between the size and stress characteristics of the non-standard impact simulated impact pit defect and the standard impact simulated impact pit defect can be established based on the target equivalent relationship. In the defect tolerance design, the complex and diverse impact simulated impact pit defects can be unified into standard sizes for research and analysis, which simplifies the research process and improves efficiency.

[0012] In an optional implementation, obtaining initial size information of a plurality of simulated impact pits generated by impacting a target object includes:

[0013] Acquire a target material corresponding to the target object;

[0014] According to the target material, determine the material dynamic deformation constitutive parameters corresponding to the target material;

[0015] According to the dynamic deformation constitutive parameters of the material, the impact on the target object is simulated in the preset finite element analysis software to generate various simulated impact pits;

[0016] The initial size information corresponding to each simulated impact pit is obtained; wherein the initial size information corresponding to each simulated impact pit is different.

[0017] The impact pit equivalent method provided in the embodiment of the present application obtains the target material corresponding to the target object; according to the target material, the material dynamic deformation constitutive parameters corresponding to the target material are determined, thereby ensuring the accuracy of the determined material dynamic deformation constitutive parameters. Thus, the accuracy and true value of each simulated impact pit generated by simulating the impact on the target object in the preset finite element analysis software according to the material dynamic deformation constitutive parameters can be ensured. The initial size information corresponding to each simulated impact pit is obtained, thereby ensuring the accuracy of the initial size information corresponding to each simulated impact pit obtained.

[0018] In an optional implementation, obtaining the maximum stress value corresponding to each simulated impact pit includes:

[0019] Obtain the maximum static load that the target object can bear;

[0020] Add the maximum static load to each simulated impact pit;

[0021] Obtain the defect stress field of each simulated impact pit under the maximum static load condition;

[0022] For each simulated impact pit, the defect stress field is analyzed to determine the maximum stress value corresponding to the simulated impact pit.

[0023] The impact pit equivalence method provided in the embodiment of the present application obtains the maximum static load that the target object can withstand; adds the maximum static load to each simulated impact pit; obtains the defect stress field of each simulated impact pit under the maximum static load condition; analyzes the defect stress field for each simulated impact pit, and determines the maximum stress value corresponding to the simulated impact pit, thereby ensuring the accuracy of the determined maximum stress value corresponding to the simulated impact pit.

[0024] In an optional implementation, analyzing the defect stress field to determine the maximum stress value corresponding to the simulated impact pit includes:

[0025] Based on the preset finite element analysis software, the defect stress field data of each simulated impact pit under the maximum static load condition is obtained; the defect stress field data includes the distribution information of each component of the stress tensor in the entire simulation area;

[0026] Preprocess the defect stress field data to generate target stress field data;

[0027] Determine the node stress data corresponding to each node in the simulated impact pit according to the target stress field data;

[0028] Compare the stress components of each node in different directions to determine the principal stress value of each node;

[0029] The principal stress values ​​corresponding to each node are compared, and the largest principal stress value is determined as the maximum stress value.

[0030] The impact pit quantification method provided in the embodiment of the present application is based on the preset finite element analysis software to obtain the defect stress field data of each simulated impact pit under the maximum static load condition, thereby ensuring the accuracy of the acquired defect stress field data. The defect stress field data is preprocessed to generate target stress field data, thereby ensuring the accuracy of the generated target stress field data. According to the target stress field data, the node stress data corresponding to each node in the simulated impact pit is determined to ensure the accuracy of the determined node stress data. The stress components of each node in different directions are compared to determine the principal stress value of each node to ensure the accuracy of the determined principal stress value of each node. Then, the principal stress values ​​corresponding to each node are compared, and the largest principal stress value is determined as the maximum stress value, thereby ensuring the accuracy of the determined maximum stress value.

[0031] In an optional implementation, generating a target equivalent relationship corresponding to the impact simulation impact pit according to the relationship between the initial depth and the initial radius and each maximum stress value, includes:

[0032] Normalizing each initial depth, each initial radius, and each maximum stress value to generate each target depth, each target radius, and each target maximum stress value;

[0033] According to the relationship between the target depth and the target radius and each target maximum stress value, a target equivalent relationship corresponding to the impact simulation impact pit is generated.

[0034] The impact pit equivalent method provided in the embodiment of the present application performs normalization processing on each initial depth, each initial radius and each maximum stress value, generates each target depth, each target radius and each target maximum stress value, and ensures the accuracy of each target depth, each target radius and each target maximum stress value. According to the relationship between the target depth and target radius and each target maximum stress value, the target equivalent relationship corresponding to the impact simulation impact pit is generated, and the accuracy of the target equivalent relationship corresponding to the generated impact simulation impact pit is ensured.

[0035] In an optional implementation, a target equivalent relationship corresponding to the impact simulation impact pit is generated according to the relationship between the target depth and the target radius and each target maximum stress value, including:

[0036] According to the relationship between each target depth and each target maximum stress value, each target depth and each target maximum stress value are fitted to generate a first equivalent relationship function between the depth and the maximum stress value;

[0037] According to the relationship between each target radius and each target maximum stress value, each target radius and each target maximum stress value are fitted to generate a second equivalent relationship function between the radius and the maximum stress value;

[0038] A target equivalence relationship is generated according to the first equivalence relationship function and the second equivalence relationship function.

[0039] The impact pit equivalent method provided in the embodiment of the present application fits each target depth and each target maximum stress value according to the relationship between each target depth and each target maximum stress value, generates a first equivalent relationship function between the depth and the maximum stress value, and ensures the accuracy of the generated first equivalent relationship function. According to the relationship between each target radius and each target maximum stress value, each target radius and each target maximum stress value are fitted to generate a second equivalent relationship function between the radius and the maximum stress value, and ensures the accuracy of the generated second equivalent relationship function. According to the first equivalent relationship function and the second equivalent relationship function, a target equivalent relationship is generated, and the accuracy of the generated target equivalent relationship is ensured.

[0040] In an optional implementation, generating a target equivalence relationship according to the first equivalence relationship function and the second equivalence relationship function includes:

[0041] The first equivalence relationship function and the second equivalence relationship function are multiplied to generate a target equivalence relationship.

[0042] The impact pit equivalence method provided in the embodiment of the present application multiplies the first equivalent relationship function and the second equivalent relationship function to generate a target equivalent relationship, thereby ensuring the accuracy of the generated target equivalent relationship.

[0043] In a second aspect, the present invention provides an impact pit equivalent device, the device comprising:

[0044] A first acquisition module is used to acquire initial size information of a plurality of simulated impact pits generated by impacting a target object; the initial size information includes an initial depth and an initial radius;

[0045] The second acquisition module is used to obtain the maximum stress value corresponding to each simulated impact pit;

[0046] The generation module is used to generate a target equivalent relationship corresponding to the impact simulation impact pit according to the relationship between the initial depth and the initial radius and each maximum stress value.

[0047] In a third aspect, the present invention provides an electronic device, comprising: a memory and a processor, the memory and the processor being communicatively connected to each other, the memory storing computer instructions, and the processor executing the impact pit quantification method of the first aspect or any corresponding embodiment thereof by executing the computer instructions.

[0048] In a fourth aspect, the present invention provides a computer-readable storage medium having computer instructions stored thereon, the computer instructions being used to enable a computer to execute the impact pit quantification method of the first aspect or any corresponding embodiment thereof.

[0049] In a fifth aspect, the present invention provides a computer program product, including computer instructions, wherein the computer instructions are used to enable a computer to execute the impact pit equivalent method of the first aspect or any corresponding embodiment thereof. BRIEF DESCRIPTION OF THE DRAWINGS

[0050] In order to more clearly illustrate the specific implementation methods of the present invention or the technical solutions in the prior art, the drawings required for use in the specific implementation methods or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are some implementation methods of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0051] Figure 1 is a schematic flow chart of a method for quantifying impact pits according to an embodiment of the present invention;

[0052] Figure 2 is a flow chart of another impact pit equivalent method according to an embodiment of the present invention;

[0053] Figure 3 is a schematic flow chart of another impact pit equivalent method according to an embodiment of the present invention;

[0054] Figure 4 is a schematic diagram of a finite element simulation result of an impact pit impact process according to an embodiment of the present invention;

[0055] Figure 5 is a schematic diagram of a finite element simulation result of monotonic stretching after impact according to an embodiment of the present invention;

[0056] Figure 6 is a schematic diagram of the fitting result of “normalized size-normalized stress feature” according to an embodiment of the present invention;

[0057] Figure 7 is a structural block diagram of an impact pit equivalent quantification device according to an embodiment of the present invention;

[0058] Figure 8 It is a schematic diagram of the hardware structure of the electronic device according to an embodiment of the present invention. DETAILED DESCRIPTION

[0059] In order to make the purpose, technical solution and advantages of the embodiments of the present invention clearer, the technical solution in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the present invention.

[0060] In the field of modern engineering, the performance and safety of mechanical load-bearing structural parts have attracted much attention. Traditionally, the service life of structural parts is mostly determined by the safe life method, which is based on the assumption that the structure is in an ideal state without defects for design and evaluation. However, in reality, structural parts will inevitably be affected by various factors and produce defects during their entire life cycle, from raw material processing to manufacturing process and then to commissioning. The existence of these defects has a significant impact on the performance and service life of structural parts, and may even endanger the safety of the structure.

[0061] The defect tolerance safe life design method has emerged as a more advanced and reliable design concept. Based on the safe life design method, it fully considers the defects and damages generated during the processing and manufacturing process and during the service life of the structural parts, so that it is closer to the actual working conditions and can more effectively predict the fatigue strength and service life of the structural parts. Among the many possible defect forms, impact defects are particularly common. The main scenarios for their occurrence include accidental collisions during processing operations and accidental drops of tools during maintenance. These situations often lead to impact simulation impact pit defects on the surface of parts.

[0062] The main defect forms considered in defect tolerance design include impact, scratches, corrosion, and composite defects. The main background of impact defects is the drop of tools during processing and maintenance, which leads to impact simulated impact pit defects on the surface of parts. Impact simulated impact pit defects will cause local residual stress and stress concentration effect in the defect. Under fatigue load, the local stress field caused by the stress concentration effect is superimposed on the residual stress field, which jointly determines the local stress state of the simulated impact pit and controls the fatigue life of the material.

[0063] The presence of impact simulated impact pit defects not only changes the geometric shape of the part surface, but more importantly, it will cause complex changes in the stress state in the local area of ​​the defect. Specifically, the impact simulated impact pit defects will cause local residual stress, and due to the sudden change in geometry, a stress concentration effect will be formed around the simulated impact pit. When the structural part is subjected to fatigue load, the local high stress field caused by the stress concentration effect and the residual stress field are superimposed on each other, jointly determining the local stress state of the simulated impact pit, which in turn has a key control effect on the fatigue life of the material.

[0064] However, the shape and size of the impact simulated impact pit defects during the service life of structural parts are not fixed, but are affected by a combination of factors. Different geometric shapes of impact objects, such as spherical, cylindrical or conical impact objects, will leave simulated impact pits of different shapes on the surface of parts; changes in the impact angle will cause differences in the shape and depth distribution of the simulated impact pits; the speed of the impact directly affects the depth and size of the simulated impact pits. These factors are intertwined, resulting in great diversity in the shape and size of the impact simulated impact pit defects between different structural parts, or even the same structural part under different service conditions. Faced with such complex and diverse impact simulated impact pit defect situations, it is almost impossible to study each real impact simulated impact pit defect one by one, whether from the perspective of time cost, economic cost or research feasibility.

[0065] In the research framework of defect tolerance design methods, in order to simplify the research process and improve research efficiency, a standardized defect model is urgently needed to carry out related research work. After a lot of research and practice, it was found that the spherical impact simulation impact pit defect was determined to be a standard defect shape suitable for defect tolerance design method research because of its relatively regular geometric shape, easy analysis and simulation, etc. By establishing an equivalent method for impact simulation impact pit defects, actual impact simulation impact pit defects of various sizes and shapes can be equivalently converted into spherical impact simulation impact pit defects with a specified depth or specified radius. In this way, researchers only need to conduct in-depth research on this standard defect to obtain the defect tolerance characteristics of materials or structures, without the need to conduct tedious and unrealistic studies on all possible size defects one by one. The establishment of this method is of great significance to promote the development of defect tolerance design research and improve the design reliability and safety of structural parts.

[0066] It should be noted that the method for quantifying impact pits provided in the embodiments of the present application may be implemented as a device for quantifying impact pits, and the device for quantifying impact pits may be implemented as part or all of an electronic device through software, hardware, or a combination of software and hardware, wherein the electronic device may be a server or a terminal, wherein the server in the embodiments of the present application may be a single server or a server cluster composed of multiple servers, and the terminal in the embodiments of the present application may be a smart phone, a personal computer, a tablet computer, a wearable device, an intelligent robot, or other intelligent hardware devices. In the following method embodiments, the execution subject is an electronic device as an example for explanation.

[0067] According to an embodiment of the present invention, an embodiment of an impact pit quantification method is provided. It should be noted that the steps shown in the flowchart of the accompanying drawings can be executed in a computer system such as a set of computer executable instructions, and although a logical order is shown in the flowchart, in some cases, the steps shown or described can be executed in an order different from that shown here.

[0068] In this embodiment, a method for quantifying impact pits is provided, which can be used in the above-mentioned electronic equipment. Figure 1 is a flow chart of a method for quantifying impact pits according to an embodiment of the present invention. Figure 1 As shown, the process includes the following steps:

[0069] Step S101, obtaining initial size information of a plurality of simulated impact pits generated by impacting a target object.

[0070] The initial size information includes an initial depth and an initial radius.

[0071] Specifically, the electronic device can receive initial size information of multiple simulated impact pits generated by impacting a target object input by a user, and can also receive initial size information of multiple simulated impact pits generated by impacting a target object sent by other devices. The electronic device can also perform a simulated impact on the target object, generate multiple simulated impact pits, and obtain initial size information of multiple simulated impact pits.

[0072] The embodiment of the present application does not specifically limit the manner in which the electronic device obtains initial size information of multiple simulated impact pits generated by impacting the target object.

[0073] Optionally, the electronic device may receive user input to determine the standard size of the impact simulated impact pit defect according to the implementation background, that is, the standard depth and standard radius of the impact simulated impact pit defect. Then, the multiple simulated impact pits acquired by the electronic device may include at least one simulated impact pit with an initial depth equal to the standard depth and an initial radius greater than the standard radius, at least one simulated impact pit with an initial depth equal to the standard depth and an initial radius equal to the standard radius, at least one simulated impact pit with an initial depth equal to the standard depth and an initial radius less than the standard radius, at least one simulated impact pit with an initial depth greater than the standard depth and an initial radius equal to the standard radius, and at least one simulated impact pit with an initial depth less than the standard depth and an initial radius greater than the standard radius.

[0074] This step will be described in detail below.

[0075] Step S102, obtaining the maximum stress corresponding to each simulated impact pit.

[0076] Specifically, the electronic device can receive the maximum stress corresponding to each simulated impact pit input by the user, the electronic device can also receive the maximum stress corresponding to each simulated impact pit sent by other devices, and the electronic device can also calculate the maximum stress corresponding to each simulated impact pit based on each simulated impact pit obtained by simulation.

[0077] The embodiment of the present application does not specifically limit the manner in which the electronic device obtains the maximum stress corresponding to each simulated impact pit.

[0078] This step will be described in detail below.

[0079] Step S103 , generating a target equivalent relationship corresponding to the impact simulation impact pit according to the relationship between the initial depth and the initial radius and each maximum stress value.

[0080] Specifically, the electronic device can fit the functional relationship between the initial depth and the maximum stress value and the functional relationship between the initial radius and each maximum stress value, respectively, and then generate a target equivalent relationship corresponding to the impact simulation impact pit based on the proposed functional relationship between the initial depth and the maximum stress value and the functional relationship between the initial radius and each maximum stress value.

[0081] This step will be described in detail below.

[0082] The impact pit equivalence method provided in the embodiment of the present application obtains the initial size information of multiple simulated impact pits generated by impacting the target object; obtains the maximum stress value corresponding to each simulated impact pit; generates the target equivalent relationship corresponding to the impact simulated impact pit according to the relationship between the initial depth and the initial radius and each maximum stress value, thereby ensuring the accuracy of the generated target equivalent relationship. This achieves the equivalence of the impact simulated impact pit. Therefore, a quantitative relationship between the size and stress characteristics of the non-standard impact simulated impact pit defect and the standard impact simulated impact pit defect can be established based on the target equivalent relationship. In the defect tolerance design, the complex and diverse impact simulated impact pit defects can be unified into standard sizes for research and analysis, which simplifies the research process and improves efficiency.

[0083] In this embodiment, a method for quantifying impact pits is provided, which can be used in the above-mentioned electronic equipment. Figure 2 is a flow chart of a method for quantifying impact pits according to an embodiment of the present invention. Figure 2 As shown, the process includes the following steps:

[0084] Step S201, obtaining initial size information of a plurality of simulated impact pits generated by impacting a target object.

[0085] The initial size information includes an initial depth and an initial radius.

[0086] Specifically, the above step S201 may include the following steps:

[0087] Step S2011, obtaining the target material corresponding to the target object.

[0088] Specifically, the electronic device may receive a target material corresponding to a target object input by a user, and may also receive a target material corresponding to a target object sent by other devices.

[0089] Step S2012: determining the material dynamic deformation constitutive parameters corresponding to the target material according to the target material.

[0090] Specifically, the electronic device can query the material dynamic deformation constitutive parameters corresponding to the target material in the deformation constitutive parameter database according to the target material.

[0091] Step S2013, simulating the impact on the target object in a preset finite element analysis software according to the dynamic deformation constitutive parameters of the material, and generating various simulated impact pits.

[0092] Specifically, the electronic device can use preset 3D modeling software (such as SolidWorks, CATIA, etc.) to create a geometric model based on the actual shape and size of the target object. During the modeling process, the electronic device can fully consider the structural characteristics of the target object, including complex curved surfaces, holes, chamfers and other details, to ensure that the geometric model can accurately reflect the true form of the target object. For example, for aircraft engine parts with complex internal flow channels, the geometry of the flow channels needs to be constructed in detail to ensure the accuracy of subsequent simulations.

[0093] Then, the electronic device imports the constructed geometric model into the preset finite element analysis software (such as Abaqus, ANSYS, etc.), and the electronic device repairs and simplifies the geometric model corresponding to the target material in the preset finite element analysis software environment. Repair possible geometric defects (such as gaps, overlapping surfaces, etc.) to ensure the smooth division of finite element meshes; at the same time, according to the focus of the analysis and the limitation of computing resources, appropriately simplify some detail features that have little effect on the overall mechanical behavior, and improve the computing efficiency without significantly affecting the computing accuracy.

[0094] In the finite element analysis software, the electronic device assigns corresponding material properties to the geometric model based on the dynamic deformation constitutive parameters of the material corresponding to the target material previously determined. In addition to the constitutive parameters, other basic physical properties of the material, such as density, Poisson's ratio, etc., need to be set. For some anisotropic materials, it is necessary to accurately input the material parameters in different directions to truly simulate the differences in the mechanical properties of the material in different directions. Considering the dynamic response characteristics of the material during the impact process, the corresponding material behavior description is set in the software according to the dynamic deformation constitutive model of the material. For example, for materials using the Johnson-Cook constitutive model, it is necessary to input various parameters in the model (yield strength, hardening coefficient, strain rate sensitivity coefficient, temperature softening coefficient, etc.) in the software so that the finite element model can accurately simulate the dynamic deformation and stress-strain relationship of the material under impact loading.

[0095] Next, the electronic device performs finite element meshing on the geometric model of the target object based on the preset meshing algorithm and unit type. Different mesh density strategies are adopted according to the structural characteristics and stress distribution of the target object. In areas where stress concentration is expected (such as areas where impact simulation impact pits may be formed, structural mutations, etc.), a finer mesh is used to accurately capture stress changes; in areas where stress changes are relatively gentle, the mesh size is appropriately increased to reduce the amount of calculation while ensuring calculation accuracy. The mesh quality is checked and optimized to ensure that quality indicators such as the mesh distortion rate and aspect ratio meet the calculation requirements. High-quality meshes help improve the stability and accuracy of finite element calculations and avoid deviations or non-convergence in calculation results due to mesh quality problems. For example, the mesh quality in key areas can be improved by adjusting the mesh node distribution, local encryption or re-division.

[0096] The electronic device determines the type of impact load (such as concentrated force, distributed force, impact velocity, etc.) and loading method according to the actual impact situation. If there is actual measured impact load data (such as data obtained by sensors in similar impact tests), it can be directly converted into load boundary conditions in the finite element model; if there is a lack of actual data, the size, direction and action time of the impact load can be reasonably set based on experience or reference to relevant standards. For example, for a tool drop impact scenario, the impact velocity can be calculated based on parameters such as the mass of the tool and the drop height, and loaded as a concentrated force to the corresponding position of the target object. Considering the dynamic characteristics of the impact load, a suitable loading curve is used to describe the change process of the load over time. Common loading curves include half-sine waves, triangular waves, trapezoidal waves, etc. According to the actual characteristics of the impact, a suitable waveform is selected, and its amplitude, period and other parameters are determined. For example, for instantaneous impact events, a half-sine wave loading curve can be used, the amplitude of which represents the maximum load of the impact, and the period reflects the duration of the impact.

[0097] In addition, the electronic device applies accurate boundary conditions in the finite element model according to the constraints of the target object during the actual impact process. If the target object is subject to fixed constraints in a certain direction (such as a structural member mounted on a base that cannot move in that direction), the displacement constraint is set to zero in the corresponding direction; for the case where some degrees of freedom are restricted (such as only being able to rotate around a certain axis), the corresponding rotation constraint is applied. Consider the contact problems that may exist during the impact process and set reasonable contact algorithms and parameters. If there is a collision or contact between the target object and other components, define the contact pair and set the contact properties, including parameters such as friction coefficient and contact stiffness. For example, when simulating the impact collision between two metal parts, determine the appropriate friction coefficient based on the surface state and lubrication conditions of the material to accurately simulate the effect of friction on the impact response during the contact process.

[0098] After completing the finite element model setting, the electronic device uses high-performance computing resources (such as cluster computing, cloud computing, etc.) to perform simulation calculations to generate various simulated impact pits.

[0099] Step S2014, obtaining initial size information corresponding to each simulated impact pit.

[0100] Among them, the initial size information corresponding to each simulated impact pit is different.

[0101] Specifically, after completing the impact simulation and generating the simulated impact dent, the electronic device extracts the node coordinates and unit information related to the simulated impact dent from the preset finite element model.

[0102] Then, the surface range of the simulated impact pit is determined according to the material deformation and stress distribution. In the finite element model, the nodes and units of the simulated impact pit surface are identified by setting criteria such as stress threshold, deformation threshold or geometric shape characteristics. For example, the area where the stress exceeds a certain multiple of the material yield strength is defined as the simulated impact pit surface, or the simulated impact pit surface is determined based on the node displacement exceeding a certain value. The identified simulated impact pit surface nodes and units are marked to provide basic data for the subsequent calculation of the size of the simulated impact pit.

[0103] The electronic device determines a reference plane for calculating the depth of the simulated impact pit according to the geometric shape and impact direction of the target object. Usually, a plane perpendicular to the impact direction and passing through the original surface of the target object is selected as the reference plane. For target objects with complex shapes, it may be necessary to make a reasonable selection according to the specific situation to ensure the accuracy of the depth calculation and the clarity of the physical meaning. Then, the electronic device calculates the distance from the node to the reference plane: for each node on the surface of the simulated impact pit, its vertical distance to the reference plane is calculated. Through the node coordinates and the reference plane equation, the distance value can be calculated using the spatial geometric relationship. During the calculation process, attention should be paid to the consistency of the coordinate system and the control of the calculation accuracy. The electronic device sorts the distances from all nodes on the surface of the simulated impact pit to the reference plane, and takes the maximum value as the depth value of the simulated impact pit. The node position corresponding to this maximum value is usually located at the deepest part of the simulated impact pit, and its distance to the reference plane is the maximum depression degree of the simulated impact pit in this direction, reflecting the depth characteristics of the simulated impact pit.

[0104] In addition, the electronic device calculates the center position of the simulated impact pit according to the distribution of the nodes on the surface of the simulated impact pit. A common method is to calculate the average value of the coordinates of the nodes on the surface of the simulated impact pit as an approximate estimate of the center position. For simulated impact pits with relatively regular shapes, this method can provide a relatively accurate center position; for irregular pits, more complex geometric algorithms can be used, such as a fitting method based on the least squares method, to find the center of a best fitting circle as the pit center.

[0105] Then, for each node on the surface of the simulated impact pit, calculate its distance to the center of the simulated impact pit. Use the node coordinates and center coordinates to calculate according to the distance formula between two points. Sort the distances from all nodes on the surface of the simulated impact pit to the center, and take the maximum value as the radius value of the simulated impact pit. The node position corresponding to this maximum value is usually located at the farthest point from the edge of the simulated impact pit, and its distance to the center is approximately the radius of the pit, reflecting the size characteristics of the pit in the plane direction. For non-circular pits, characteristic dimensions in multiple directions (such as major axis, minor axis length, etc.) can be calculated to describe their shape and size characteristics.

[0106] Step S202, obtaining the maximum stress corresponding to each simulated impact pit.

[0107] Specifically, the above step S202 may include the following steps:

[0108] Step S2021, obtaining the maximum static load that the target object can withstand.

[0109] Specifically, the electronic device may receive the maximum static load that the target object can withstand, which is input by the user, or may calculate the maximum static load that the target object can withstand according to the material characteristics and structural characteristics corresponding to the target object.

[0110] Step S2022, adding a maximum static load to each simulated impact pit.

[0111] Specifically, in the finite element analysis software, the electronic device can apply the obtained maximum static load to the simulated impact pit model in an appropriate manner. If the maximum static load is a concentrated force, it can be applied directly to the pit surface or related key parts; if it is a distributed force, uniform or non-uniform distribution loading is performed in the corresponding area according to the actual load distribution.

[0112] The electronic device can define the direction and mode of action of the maximum static load to match the actual stress of the target object in use. For example, if the target object is subjected to vertical pressure in reality, the maximum static load should also be applied in the vertical direction in the finite element model. At the same time, the loading rate of the load is considered. For static loads, a slow loading method is generally used to avoid the influence of dynamic effects.

[0113] Step S2023, obtaining the defect stress field of each simulated impact pit under the maximum static load condition.

[0114] Specifically, the electronic device calculates the simulated impact pit model after adding the maximum static load. During the calculation process, the electronic device can solve the equilibrium equation of the structure according to the material properties, geometric shape, boundary conditions and loading conditions of the model to obtain the displacement field and stress field of the simulated impact pit under the maximum static load.

[0115] Step S2024, analyzing the defect stress field for each simulated impact pit to determine the maximum stress value corresponding to the simulated impact pit.

[0116] Specifically, the “analyzing the defect stress field to determine the maximum stress value corresponding to the simulated impact pit” in the above step S2024 may include the following steps:

[0117] Step a1, based on the preset finite element analysis software, obtain the defect stress field data of each simulated impact pit under the maximum static load condition.

[0118] The defect stress field data includes the distribution information of each component of the stress tensor in the entire simulation area.

[0119] Specifically, the electronic device can add appropriate calculation parameters in the preset finite element analysis software, including the solver type (such as implicit solver or explicit solver, selected according to the nonlinear degree and dynamic characteristics of the problem), iterative algorithm (such as Newton-Raphson iteration method, etc.), convergence criteria (such as stress convergence criteria, displacement convergence criteria, etc., to ensure the accuracy and stability of the calculation results) and time step (for dynamic problems or nonlinear problems, the time step is reasonably selected to ensure the balance between calculation accuracy and calculation efficiency). Then, according to the finite element theory and the set calculation parameters, the geometric model corresponding to the simulated impact pit is numerically calculated to obtain the defect stress field data of the simulated impact pit under the maximum static load condition.

[0120] Step a2, preprocessing the defect stress field data to generate target stress field data.

[0121] Specifically, the electronic device checks the acquired defect stress field data to see if there are any problems such as missing data, abnormal values ​​(such as stress values ​​that are too large or too small, beyond a reasonable range), or data discontinuity. For nodes or units with missing data, interpolation algorithms (such as linear interpolation, cubic spline interpolation, etc.) are used to reasonably supplement them according to the stress distribution of surrounding nodes; for abnormal values, by comparing with the stress values ​​of adjacent nodes and combining with physical models for judgment, if it is determined to be erroneous data, appropriate methods are used to correct it (such as taking the average value of the stress of adjacent nodes to replace the abnormal value) to ensure the integrity and reliability of the data.

[0122] In order to reduce the fluctuation of stress field data caused by calculation errors and discretization effects, electronic equipment can use data smoothing and filtering technology to process the original data. For example, the moving average method, Gaussian filtering method, etc. are used to smooth the stress field data. Under the premise of not changing the overall trend and characteristics of the stress field, the noise level of the data is reduced, and the stress distribution is made more continuous and smooth, which is convenient for subsequent analysis and accurate identification of stress concentration areas.

[0123] In addition, according to the needs of the analysis, the electronic device can also perform coordinate transformation on the stress field data. For example, if the local coordinate system used in the finite element model is inconsistent with the global coordinate system used in the subsequent analysis, the components of the stress tensor in the local coordinate system need to be transformed to the global coordinate system to ensure the compatibility and consistency of the data in different analysis stages and different software modules. At the same time, the processed data is converted into a unified data format to facilitate subsequent data reading, processing and analysis operations.

[0124] Step a3, determining the node stress data corresponding to each node in the simulated impact pit according to the target stress field data.

[0125] Specifically, the electronic device can calculate the node stress data corresponding to each node in the simulated impact pit through a preset calculation method based on the finite element theory. The preset calculation method may include a weighted average method based on unit stress, a node stress calculation method based on shape function, etc. The weighted average method performs a weighted average on the unit stress according to the size, shape and connection relationship of the unit with the node, and distributes the result to the node; the method based on shape function uses the value of the unit shape function at the node to extrapolate the stress at the unit integration point to the node. Select an appropriate node stress calculation method based on the characteristics of the model and the calculation accuracy requirements.

[0126] Specifically, the electronic device can traverse all nodes of the simulated impact pit according to the preset calculation method and calculate the stress component of each node. For each node, all adjacent units are considered, and the stress value (including normal stress and shear stress) of the node in each direction is calculated according to the stress state of the unit and the geometric relationship between the node and the unit. The calculated node stress values ​​are stored in order according to the node number to form a node stress data set, in which the stress data of each node contains the stress component information of the node in different directions, which provides basic data for the subsequent determination of the principal stress value.

[0127] Step a4, comparing the magnitudes of the stress components of each node in different directions to determine the principal stress value of each node.

[0128] Specifically, the magnitude and direction of the principal stress can be determined by solving the eigenvalues ​​and eigenvectors of the stress tensor. For a three-dimensional stress state, let the stress tensor be Its principal stresses σ1, σ2, and σ3 satisfy the characteristic equation |σ-λI|=0 (where λ is the principal stress value and I is the unit matrix). Solving this equation can obtain the three principal stress values.

[0129] For each node, the electronic device substitutes the node stress component into the above characteristic equation and solves for three principal stress values ​​σ1, σ2, and σ3 (arranged in order from large to small). At the same time, the direction of the principal stress can be determined by solving the eigenvector, which represents the direction cosine of the principal stress direction relative to the original coordinate system. In actual calculations, numerical calculation methods (such as Jacobi iteration method, QR decomposition method, etc.) can be used to solve eigenvalue and eigenvector problems to ensure the accuracy and efficiency of the calculation. The calculated principal stress values ​​and corresponding direction information are associated with the node numbers and stored for subsequent analysis and comparison.

[0130] Step a5: compare the principal stress values ​​corresponding to each node, and determine the largest principal stress value as the maximum stress value.

[0131] Specifically, the electronic device may compare the principal stress values ​​corresponding to the nodes, and determine the largest principal stress value as the maximum stress value.

[0132] Step S203 , generating a target equivalent relationship corresponding to the impact simulation impact pit according to the relationship between the initial depth and the initial radius and each maximum stress value.

[0133] For details about this step, please refer to the above description of step S103, which will not be elaborated here.

[0134] The impact pit equivalent method provided in the embodiment of the present application obtains the target material corresponding to the target object; according to the target material, the material dynamic deformation constitutive parameters corresponding to the target material are determined, thereby ensuring the accuracy of the determined material dynamic deformation constitutive parameters. Thus, the accuracy and true value of each simulated impact pit generated by simulating the impact on the target object in the preset finite element analysis software according to the material dynamic deformation constitutive parameters can be ensured. The initial size information corresponding to each simulated impact pit is obtained, thereby ensuring the accuracy of the initial size information corresponding to each simulated impact pit obtained. The maximum static load that the target object can bear is obtained; the maximum static load is added to each simulated impact pit; the defect stress field of each simulated impact pit under the maximum static load condition is obtained; for each simulated impact pit, based on the preset finite element analysis software, the defect stress field data of each simulated impact pit under the maximum static load condition is obtained, thereby ensuring the accuracy of the defect stress field data obtained. The defect stress field data is preprocessed to generate the target stress field data, thereby ensuring the accuracy of the generated target stress field data. According to the target stress field data, the node stress data corresponding to each node in the simulated impact pit is determined, thereby ensuring the accuracy of the determined node stress data. Compare the stress components of each node in different directions to determine the principal stress value of each node, thereby ensuring the accuracy of the principal stress value of each node. Then, compare the principal stress values ​​corresponding to each node, and determine the largest principal stress value as the maximum stress value, thereby ensuring the accuracy of the maximum stress value.

[0135] In this embodiment, a method for quantifying impact pits is provided, which can be used in the above-mentioned electronic equipment. Figure 3 is a flow chart of a method for quantifying impact pits according to an embodiment of the present invention. Figure 3 As shown, the process includes the following steps:

[0136] Step S301, obtaining initial size information of a plurality of simulated impact pits generated by impacting a target object.

[0137] The initial size information includes an initial depth and an initial radius.

[0138] For details about this step, please refer to the above description of step S201, which will not be elaborated here.

[0139] Step S302, obtaining the maximum stress corresponding to each simulated impact pit.

[0140] For details about this step, please refer to the above description of step S202, which will not be elaborated here.

[0141] Step S303 : generating a target equivalent relationship corresponding to the impact simulation impact pit according to the relationship between the initial depth and the initial radius and each maximum stress value.

[0142] Specifically, the above step S303 may include the following steps:

[0143] Step S3031 , normalizing each initial depth, each initial radius, and each maximum stress value to generate each target depth, each target radius, and each target maximum stress value.

[0144] Specifically, the electronic device may respectively normalize each initial depth, each initial radius, and each maximum stress value to generate each target depth, each target radius, and each target maximum stress value.

[0145] For example, let the depth and radius of the standard simulated impact pit be h0 and r0 respectively, let the depth and radius of the non-standard simulated impact pit be h and r respectively, then the normalized depth and radius of the impact pit defect are The normalized depth and radius of the standard simulated impact pit are The maximum stress value of the standard simulated impact pit is σ0, and the maximum stress value of the non-standard simulated impact pit is σ. Then the normalized stress of the impact pit defect is The normalized stress of the standard simulated impact dent is

[0146] Step S3032, generating a target equivalent relationship corresponding to the impact simulation impact pit according to the relationship between the target depth and the target radius and each target maximum stress value.

[0147] Specifically, the above step S3032 may include the following steps:

[0148] Step b1, fitting each target depth and each target maximum stress value according to the relationship between each target depth and each target maximum stress value, and generating a first equivalent relationship function between the depth and the maximum stress value.

[0149] Specifically, the electronic device may fit each target depth and each target maximum stress value using a preset fitting method according to the relationship between each target depth and each target maximum stress value, and generate a first equivalent relationship function between the depth and the maximum stress value.

[0150] The preset fitting method may be a least squares fitting method or other multiplication fitting methods.

[0151] Exemplarily, the electronic device fits each target depth and each target maximum stress value based on the least squares fitting method, and generates a first equivalent relationship function between the depth and the maximum stress value:

[0152] Step b2, fitting each target radius and each target maximum stress value according to the relationship between each target radius and each target maximum stress value, and generating a second equivalent relationship function between the radius and the maximum stress value.

[0153] Specifically, the electronic device may use a preset fitting method to fit each target radius and each target maximum stress value according to the relationship between each target radius and each target maximum stress value, and generate a second equivalent relationship function between the radius and the maximum stress value.

[0154] The preset fitting method may be a least squares fitting method or other multiplication fitting methods.

[0155] Exemplarily, the electronic device fits each target radius and each target maximum stress value based on the least squares fitting method to generate a second equivalent relationship function between the radius and the maximum stress value:

[0156] Step b3, generating a target equivalence relationship according to the first equivalence relationship function and the second equivalence relationship function.

[0157] Specifically, the above step b3 may include the following steps:

[0158] The first equivalence relationship function and the second equivalence relationship function are multiplied to generate a target equivalence relationship.

[0159] Specifically, the electronic device may multiply the first equivalence relationship function and the second equivalence relationship function to generate a target equivalence relationship.

[0160] Exemplarily, the sub-device may multiply the first equivalent relationship function and the second equivalent relationship function to generate a target equivalent relationship of

[0161] The impact pit equivalent method provided in the embodiment of the present application performs normalization processing on each initial depth, each initial radius and each maximum stress value, respectively, generates each target depth, each target radius and each target maximum stress value, and ensures the accuracy of each target depth, each target radius and each target maximum stress value. Then, according to the relationship between each target depth and each target maximum stress value, each target depth and each target maximum stress value are fitted to generate a first equivalent relationship function between depth and maximum stress value, and the accuracy of the generated first equivalent relationship function is ensured. According to the relationship between each target radius and each target maximum stress value, each target radius and each target maximum stress value are fitted to generate a second equivalent relationship function between radius and maximum stress value, and the accuracy of the generated second equivalent relationship function is ensured. The first equivalent relationship function and the second equivalent relationship function are multiplied to generate a target equivalent relationship, and the accuracy of the generated target equivalent relationship is ensured.

[0162] In order to better introduce the impact pit equivalent method provided in the embodiment of the present application, the embodiment of the present application provides a specific embodiment.

[0163] This embodiment is the equivalent quantity of the impact pit defect of TC4 titanium alloy. Titanium alloy TC4 is a commonly used structural material in the aviation industry. Its application scenarios include load-bearing components of aircraft and helicopters, fan and compressor blades of aircraft engines, casings, etc. For these application scenarios, titanium alloy components have impact pits caused by service, maintenance, etc., and there are defect tolerance issues. Therefore, in this example, TC4 titanium alloy is selected for detailed description of the present invention.

[0164] Step 1: Select the defect tolerance design of the helicopter transmission system as the background to determine that the standard impact pit defect size of TC4 titanium alloy is 6mm in diameter and 0.25mm in depth.

[0165] Step 2: Use Johnson-Cook constitutive model to describe the dynamic deformation behavior of TC4 titanium alloy. According to the published literature, the Johnson-Cook constitutive model of TC4 titanium alloy contains parameters, namely parameter A = 954.74: quasi-static initial yield stress of the material, parameter B = 340.4: hardening coefficient, parameter n = 0.49: hardening exponent, parameter C = 0.0503: strain rate sensitive parameter; temperature softening control parameter m = 0.52.

[0166] Step 3, use Abaqus / Explicit to perform finite element simulation of the impact process. Use punches with radii of 1mm, 2mm, 3mm, 4mm, and 5mm and impact speeds of 1.08m / s, 1.55m / s, 1.95m / s, 2.35m / s, and 2.55m / s (the corresponding impact pit defect depths are 0.16mm, 0.2mm, 0.25mm, 0.3mm, and 0.345mm, respectively) to perform finite element simulation to obtain impact pit defects of different sizes and the corresponding residual stress fields. For example, Figure 4 Shown are the finite element simulation results of the impact pit impact process.

[0167] Step 4: Abaqus / Standard is used to perform a post-impact monotonic tensile finite element simulation, the Predefined Field in Abaqus is used to read the residual stress field in step 3, the Import Model method in Abaqus is used to read the geometric configuration of the material containing the impact defect in step 3, and the maximum load in the fatigue load is used to perform a static finite element simulation to obtain the stress field of the metamaterial containing the impact pit defect. For example, Figure 5 Shown are the finite element simulation results of monotonic tension following impact.

[0168] Step 5: In the finite element calculation results, select the first principal stress as the display object, identify the node with the maximum first principal stress in the stress field, and record the node number.

[0169] Step 6: Extract the first principal stress of the node in step 5.

[0170] Step 7: The impact pit defect depth obtained by the finite element simulation of the impact process is divided by the standard depth to obtain the normalized depth, and the impact pit defect radius is divided by the standard radius to obtain the normalized radius. The normalized depths of the impact pit defects are 0.65, 0.8, 1.0, 1.2, and 1.4, respectively, and the normalized radii are 0.333, 0.667, 1.0, 1.33, and 1.667, respectively.

[0171] Step 8: Divide the stress characteristics obtained from the monotonic tensile finite element simulation after impact by the stress characteristics of the standard impact pit defect to obtain the normalized stress characteristics, which are 1.71, 1.65, 1.62, 1.66, 1.8, 1.66, 1.61, 1.62, 1.69, and 1.76, respectively.

[0172] Step 9: Use a cubic polynomial function The least squares fitting of the "normalized depth-normalized stress characteristic" data is performed, and the cubic polynomial function is also used. The least squares fitting of the "normalized radius-normalized stress characteristic" data is performed to obtain the coefficients and constants in the cubic function. The cubic polynomial function of "normalized depth-normalized stress characteristic" is: The cubic polynomial function of "normalized radius-normalized stress characteristic" is

[0173] Step 10: Multiply the two polynomial functions obtained in step 9 to construct a mathematical expression of "normalized size-normalized stress characteristics". The coefficients and constants of the two polynomial functions obtained in step 9 are used as the initial points of fitting, and the coefficients and constants in the mathematical expression of "normalized size-normalized stress characteristics" are obtained by least square fitting. The mathematical expression of "normalized size-normalized stress characteristics" thus obtained is:

[0174]

[0175] The above formula is the established equivalent formula. For example, Figure 6 Shown is the fitting result of “normalized size-normalized stress characteristics”.

[0176] For example, the depth of the existing non-standard defect is h = 0.18mm, the radius is r = 2mm, and the equivalent radius is r = 3mm and the depth is h = 0.1884mm. In addition, there is a non-standard defect with a depth of h = 0.32mm and a radius of r = 2mm. The equivalent radius is r = 3mm and the depth is h = 0.3151mm.

[0177] In this embodiment, an impact pit quantification device is also provided, which is used to implement the above embodiments and preferred embodiments, and the descriptions that have been made will not be repeated. As used below, the term "module" can be a combination of software and / or hardware that implements a predetermined function. Although the devices described in the following embodiments are preferably implemented in software, the implementation of hardware, or a combination of software and hardware, is also possible and conceivable.

[0178] This embodiment provides a device for quantifying impact pits, such as Figure 7 As shown, including:

[0179] The first acquisition module 401 is used to acquire initial size information of a plurality of simulated impact pits generated by impacting a target object; the initial size information includes an initial depth and an initial radius;

[0180] The second acquisition module 402 is used to obtain the maximum stress value corresponding to each simulated impact pit;

[0181] The generating module 403 is used to generate a target equivalent relationship corresponding to the impact dent of the impact simulation according to the relationship between the initial depth and the initial radius and each maximum stress value.

[0182] In some optional embodiments, the first acquisition module 401 is specifically used to acquire a target material corresponding to a target object; determine material dynamic deformation constitutive parameters corresponding to the target material based on the target material; simulate the impact on the target object in a preset finite element analysis software based on the material dynamic deformation constitutive parameters to generate various simulated impact pits; acquire initial size information corresponding to each simulated impact pit; wherein the initial size information corresponding to each simulated impact pit is different.

[0183] In some optional embodiments, the second acquisition module 402 is specifically used to obtain the maximum static load that the target object can withstand; add the maximum static load to each simulated impact pit; obtain the defect stress field of each simulated impact pit under the maximum static load condition; for each simulated impact pit, analyze the defect stress field to determine the maximum stress value corresponding to the simulated impact pit.

[0184] In some optional embodiments, the second acquisition module 402 is specifically used to obtain defect stress field data of each simulated impact pit under the maximum static load condition based on a preset finite element analysis software; the defect stress field data includes distribution information of each component of the stress tensor in the entire simulation area; the defect stress field data is preprocessed to generate target stress field data; based on the target stress field data, the node stress data corresponding to each node in the simulated impact pit is determined; the stress component size of each node in different directions is compared to determine the principal stress value of each node; the principal stress values ​​corresponding to each node are compared to determine the largest principal stress value as the maximum stress value.

[0185] In some optional embodiments, the generation module 403 is specifically used to normalize each initial depth, each initial radius and each maximum stress value, respectively, to generate each target depth, each target radius and each target maximum stress value; based on the relationship between the target depth and the target radius and each target maximum stress value, respectively, to generate a target equivalent relationship corresponding to the impact simulation impact pit.

[0186] In some optional embodiments, the generation module 403 is specifically used to fit each target depth and each target maximum stress value according to the relationship between each target depth and each target maximum stress value, and generate a first equivalent relationship function between the depth and the maximum stress value; according to the relationship between each target radius and each target maximum stress value, fit each target radius and each target maximum stress value to generate a second equivalent relationship function between the radius and the maximum stress value; based on the first equivalent relationship function and the second equivalent relationship function, generate a target equivalent relationship.

[0187] In some optional implementations, the generation module 403 is specifically configured to multiply the first equivalent relationship function and the second equivalent relationship function to generate a target equivalent relationship.

[0188] The further functional description of each of the above modules and units is the same as that of the above corresponding embodiments and will not be repeated here.

[0189] The impact pit quantification device in this embodiment is presented in the form of a functional unit, where the unit refers to an ASIC (Application Specific Integrated Circuit) circuit, a processor and memory that executes one or more software or fixed programs, and / or other devices that can provide the above functions.

[0190] The embodiment of the present invention also provides an electronic device having the above Figure 7 The impact pits shown serve as a quantifying device.

[0191] See also Figure 8 , Figure 8 is a schematic diagram of the structure of an electronic device provided by an optional embodiment of the present invention, such as Figure 8 As shown, the electronic device includes: one or more processors 10, a memory 20, and interfaces for connecting various components, including high-speed interfaces and low-speed interfaces. The various components are connected to each other using different buses for communication, and can be installed on a common mainboard or installed in other ways as needed. The processor can process instructions executed in the electronic device, including instructions stored in or on the memory to display graphical information of the GUI on an external input / output device (such as a display device coupled to the interface). In some optional embodiments, if necessary, multiple processors and / or multiple buses can be used together with multiple memories and multiple memories. Similarly, multiple electronic devices can be connected, and each device provides some necessary operations (for example, as a server array, a group of blade servers, or a multi-processor system). Figure 8 A processor 10 is taken as an example.

[0192] The processor 10 may be a central processing unit, a network processor or a combination thereof. The processor 10 may further include a hardware chip. The hardware chip may be a dedicated integrated circuit, a programmable logic device or a combination thereof. The programmable logic device may be a complex programmable logic device, a field programmable gate array, a general purpose array logic or any combination thereof.

[0193] The memory 20 stores instructions executable by at least one processor 10, so that at least one processor 10 executes the method shown in the above embodiment.

[0194] The memory 20 may include a program storage area and a data storage area, wherein the program storage area may store an operating system, an application required for at least one function; the data storage area may store data created according to the use of the electronic device, etc. In addition, the memory 20 may include a high-speed random access memory, and may also include a non-transient memory, such as at least one disk storage device, a flash memory device, or other non-transient solid-state storage device. In some optional embodiments, the memory 20 may optionally include a memory remotely arranged relative to the processor 10, and these remote memories may be connected to the electronic device via a network. Examples of the above-mentioned network include, but are not limited to, the Internet, an intranet, a local area network, a mobile communication network, and combinations thereof.

[0195] The memory 20 may include a volatile memory, such as a random access memory; the memory may also include a non-volatile memory, such as a flash memory, a hard disk or a solid state drive; the memory 20 may also include a combination of the above types of memory.

[0196] The electronic device further includes an input device 30 and an output device 40. The processor 10, the memory 20, the input device 30 and the output device 40 may be connected via a bus or other means. Figure 8 The example of connecting through bus is taken in the following.

[0197] The input device 30 can receive input digital or character information, and generate key signal input related to the user settings and function control of the electronic device, such as a touch screen, a keypad, a mouse, a track pad, a touch pad, an indicator rod, one or more mouse buttons, a trackball, a joystick, etc. The output device 40 may include a display device, an auxiliary lighting device (e.g., an LED) and a tactile feedback device (e.g., a vibration motor), etc. The above-mentioned display device includes but is not limited to a liquid crystal display, a light emitting diode, a display and a plasma display. In some optional embodiments, the display device can be a touch screen.

[0198] The embodiment of the present invention also provides a computer-readable storage medium. The method according to the embodiment of the present invention can be implemented in hardware, firmware, or can be implemented as a computer code that can be recorded in a storage medium, or can be implemented as a computer code that is originally stored in a remote storage medium or a non-temporary machine-readable storage medium and will be stored in a local storage medium through a network download, so that the method described herein can be stored in such software processing on a storage medium using a general-purpose computer, a dedicated processor, or programmable or dedicated hardware. Among them, the storage medium can be a magnetic disk, an optical disk, a read-only storage memory, a random access memory, a flash memory, a hard disk or a solid-state hard disk, etc.; further, the storage medium can also include a combination of the above types of memories. It can be understood that a computer, a processor, a microprocessor controller, or programmable hardware includes a storage component that can store or receive software or computer code. When the software or computer code is accessed and executed by a computer, a processor, or hardware, the method shown in the above embodiment is implemented.

[0199] A part of the present invention may be applied as a computer program product, such as a computer program instruction, which, when executed by a computer, can call or provide the method and / or technical solution according to the present invention through the operation of the computer. Those skilled in the art should understand that the existence of computer program instructions in computer-readable media includes, but is not limited to, source files, executable files, installation package files, etc., and accordingly, the way in which computer program instructions are executed by a computer includes, but is not limited to: the computer directly executes the instruction, or the computer compiles the instruction and then executes the corresponding compiled program, or the computer reads and executes the instruction, or the computer reads and installs the instruction and then executes the corresponding installed program. Here, the computer-readable medium may be any available computer-readable storage medium or communication medium accessible to the computer.

[0200] Although the embodiments of the present invention have been described in conjunction with the accompanying drawings, those skilled in the art may make various modifications and variations without departing from the spirit and scope of the present invention, and such modifications and variations are all within the scope defined by the appended claims.

Claims

1. A method for quantifying impact pits, characterized in that: The method comprises: Acquire initial size information of a plurality of simulated impact pits generated by impacting a target object; the initial size information includes an initial depth and an initial radius; Obtaining the maximum stress value corresponding to each of the simulated impact pits; According to the relationship between the initial depth and the initial radius and each of the maximum stress values, a target equivalent relationship corresponding to the impact simulation impact pit is generated.

2. The method according to claim 1, characterized in that: The obtaining of initial size information of a plurality of simulated impact pits generated by impacting the target object comprises: Acquire a target material corresponding to the target object; According to the target material, determining a material dynamic deformation constitutive parameter corresponding to the target material; According to the dynamic deformation constitutive parameters of the material, simulating the impact on the target object in a preset finite element analysis software to generate each of the simulated impact pits; The initial size information corresponding to each of the simulated impact pits is obtained; wherein the initial size information corresponding to each of the simulated impact pits is different.

3. The method according to claim 1, characterized in that The obtaining of the maximum stress value corresponding to each of the simulated impact pits comprises: Obtaining a maximum static load that the target object can bear; adding the maximum static load to each of the simulated impact pits; Obtaining the defect stress field of each of the simulated impact pits under the maximum static load condition; For each of the simulated impact pits, the defect stress field is analyzed to determine the maximum stress value corresponding to the simulated impact pit.

4. The method according to claim 3, characterized in that The analyzing the defect stress field to determine the maximum stress value corresponding to the simulated impact pit includes: Based on the preset finite element analysis software, defect stress field data of each simulated impact pit under the maximum static load condition is obtained; the defect stress field data includes distribution information of each component of the stress tensor in the entire simulation area; Performing data preprocessing on the defect stress field data to generate target stress field data; Determining node stress data corresponding to each node in the simulated impact pit according to the target stress field data; Compare the magnitudes of the stress components of each node in different directions to determine the principal stress value of each node; The principal stress values ​​corresponding to the nodes are compared, and the largest principal stress value is determined as the maximum stress value.

5. The method according to claim 1, characterized in that The generating a target equivalent relationship corresponding to the impact simulation impact pit according to the relationship between the initial depth and the initial radius and each of the maximum stress values, comprises: Normalizing each of the initial depths, each of the initial radii, and each of the maximum stress values ​​to generate each target depth, each target radius, and each target maximum stress value; According to the relationship between the target depth and the target radius and each of the target maximum stress values, a target equivalent relationship corresponding to the impact simulation impact pit is generated.

6. The method according to claim 5, characterized in that The generating a target equivalent relationship corresponding to the impact simulation impact pit according to the relationship between the target depth and the target radius and each target maximum stress value, comprises: According to the relationship between each target depth and each target maximum stress value, each target depth and each target maximum stress value are fitted to generate a first equivalent relationship function between the depth and the maximum stress value; According to the relationship between each target radius and each target maximum stress value, each target radius and each target maximum stress value are fitted to generate a second equivalent relationship function between the radius and the maximum stress value; The target equivalence relationship is generated according to the first equivalence relationship function and the second equivalence relationship function.

7. The method according to claim 6, characterized in that The generating the target equivalence relationship according to the first equivalence relationship function and the second equivalence relationship function includes: The first equivalence relationship function and the second equivalence relationship function are multiplied to generate the target equivalence relationship.

8. An impact pit equivalent device, characterized in that: The device comprises: A first acquisition module is used to acquire initial size information of a plurality of simulated impact pits generated by impacting a target object; the initial size information includes an initial depth and an initial radius; A second acquisition module is used to obtain the maximum stress value corresponding to each of the simulated impact pits; A generating module is used to generate a target equivalent relationship corresponding to the impact simulation impact pit according to the relationship between the initial depth and the initial radius and each of the maximum stress values.

9. An electronic device, characterized in that: include: A memory and a processor, wherein the memory and the processor are communicatively connected to each other, the memory stores computer instructions, and the processor executes the impact pit quantification method according to any one of claims 1 to 7 by executing the computer instructions.

10. A computer-readable storage medium, characterized in that: The computer-readable storage medium stores computer instructions, and the computer instructions are used to enable a computer to execute the impact pit equivalent method according to any one of claims 1 to 7.

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