Method for influencing charged particle beam, multipole arrangement, and charged particle beam apparatus

Abstract

A method for influencing a charged particle beam (11) propagating along an optical axis (A) is described. The method comprises: directing a charged particle beam (11) through at least one opening (102) of a multipole device (100, 200), the multipole device comprising a first multipole (110, 210) having four or more first electrodes (111, 211) and a second multipole (120, 220) having four or more second electrodes (121, 221) arranged in a same cross-section, the first and second electrodes being alternately arranged around the at least one opening (102); and at least one of exciting the first multipole to provide a first field distribution for influencing the charged particle beam in a first manner and exciting the second multipole to provide a second field distribution for influencing the charged particle beam in a second manner. Furthermore, a multipole arrangement (100, 200) having a first multipole (110, 210) and a second multipole (120, 220) arranged on the same substrate, and a charged particle beam apparatus (500) having the multipole arrangement (100, 200) are provided.

Description

[0001] This application is a divisional application of the Chinese patent application (PCT application number PCT / EP2022 / 052996) with an application date of February 8, 2022, application number 202280012661.9, and name “Method for influencing a charged particle beam, a multipole device, and a charged particle beam device”. Technical Field

[0002] Embodiments described herein relate to charged particle beam equipment, for example, charged particle beam equipment for inspection system applications, test system applications, lithography system applications, defect review or critical dimension applications, and particularly to electron beam inspection equipment, and more particularly to scanning electron microscopes. Embodiments described herein further relate to multipole devices for affecting charged particle beams in charged particle beam equipment, and to methods for affecting charged particle beams with multipole devices. Specifically, embodiments described herein relate to multipole devices and methods for affecting electron beams in a particular manner (e.g., by deflecting, scanning and / or correcting electron beams), particularly in electronic inspection and imaging systems. Background Art

[0003] Modern semiconductor technology has created a high demand for sample structuring and detection in nanometer and even sub-nanometer scale. Micrometer and nanometer scale process control, inspection or structuring is usually completed by charged particle beams (e.g., electron beams), which are generated, shaped, deflected and focused in charged particle beam equipment (such as electron microscopes or electron beam pattern generators). For inspection purposes, charged particle beams provide better spatial resolution than, for example, photon beams.

[0004] Inspection equipment using charged particle beams, such as scanning electron microscopes (SEMs), has many functions in multiple industrial fields, including, but not limited to, inspection of electronic circuits during manufacture, exposure systems for lithography, detection systems, defect detection tools, and test systems for integrated circuits. In such particle beam systems, precision beam probes with high current density can be used. For example, in the case of a SEM, the primary electron beam generates signal particles, such as secondary electrons (SE) and / or backscattered electrons (BSE), that can be used for imaging and analyzing samples.

[0005] However, it is challenging to test and / or image samples quickly in compact charged particle beam devices. Specifically, various scanning deflectors, alignment deflectors, lenses, beam correctors and / or other beam optical components can be arranged in the vacuum housing of the charged particle beam device along the optical axis, and may take up a large amount of space. However, the space in the charged particle beam device, especially in the area near the object lens, is usually limited.

[0006] Some charged particle beam equipment use multipole devices (for example, electrostatic multipole) to carry out beam deflection and / or beam correction.High-order multipoles such as 16 poles or 32 poles can be used for different purposes, for example, as quadrupoles or as octopoles.But typical high-order multipoles are complicated devices, and it is challenging to reliably excite each of a large amount of electrodes to suitable voltage at the right time.Therefore, high-order multipoles are generally applicable to affect charged particle beams in a specific manner, for example, for correcting high-order aberrations.

[0007] In view of the above description, it would be useful to provide a compact multipole device that is suitable for flexibly and reliably influencing charged particle beams. In addition, it would be useful to provide a method that flexibly and reliably influencing the charged particle beams in a charged particle beam device even when there is only limited space. Finally, it would be useful to provide a charged particle beam device that is suitable for influencing charged particle beams in a desired manner in a limited space. Summary of the invention

[0008] In view of the above, a method for influencing a charged particle beam propagating along an optical axis, a multipole arrangement for influencing a charged particle beam propagating along an optical axis, and a charged particle beam device for examining or imaging a sample are provided according to the independent claims.

[0009] According to a first aspect, a method for influencing a charged particle beam propagating along an optical axis is provided. The method comprises: guiding the charged particle beam through at least one opening of a multipole device, the multipole device comprising a first multipole having four or more first electrodes and a second multipole having four or more second electrodes arranged in the same cross section, the four or more first electrodes and the four or more second electrodes being alternately arranged around the at least one opening; and at least one of the following steps: exciting the first multipole to provide a first field distribution for influencing the charged particle beam in a first manner, and exciting the second multipole to provide a second field distribution for influencing the charged particle beam in a second manner.

[0010] According to another aspect, a multipole device for influencing a charged particle beam propagating along an optical axis is provided. The multipole device comprises: a substrate having at least one opening for the charged particle beam, the at least one opening extending through the substrate along the optical axis; a first multipole, the first multipole comprising four or more first electrodes disposed on the substrate; a second multipole, the second multipole comprising four or more second electrodes disposed on the substrate, the four or more first electrodes and the four or more second electrodes being alternately arranged around the at least one opening; a first power supply arrangement, the first power supply arrangement being used to connect the first electrode to a first voltage supply; and a second power supply arrangement, the second power supply arrangement being used to connect the second electrode to a second voltage supply.

[0011] The first power supply arrangement can be configured to excite the first multipole to provide a first field distribution for affecting a charged particle beam in a first manner, for example, for deflecting a charged particle beam ("beam displacement"). The second power supply arrangement can be configured to excite the second multipole to provide a second field distribution for affecting a charged particle beam in a second manner, for example, for scanning a charged particle beam ("beam scanning"), wherein the first field distribution and the second field distribution can be superimposed on each other.

[0012] According to another aspect, a charged particle beam device for imaging and / or inspecting a sample with a charged particle beam, in particular an electron beam, is provided. The charged particle beam device may include: a charged particle beam source for generating a charged particle beam; an objective lens for focusing the charged particle beam on the sample; and a multipole device for influencing the charged particle beam, wherein the multipole device is configured according to any one of the embodiments described herein.

[0013] When the multipole device is arranged near or inside the objective, the charged particle beam device can provide a large field of view, thereby achieving a large beam displacement.

[0014] The multipole arrangement may comprise a first multipole for influencing the charged particle beam in a first way, for example suitable for beam deflection ("beam displacement"), and, in particular simultaneously with the beam displacement, a second multipole for influencing the charged particle beam in a second way, for example suitable for beam scanning ("beam scanning").

[0015] Embodiments also relate to devices for performing the disclosed methods, and include device components for performing the various method actions. The methods may be performed by hardware components, computers programmed by appropriate software, any combination of the two, or in any other manner. In addition, embodiments also relate to methods for operating the devices.

[0016] Further advantages, features, aspects and details that can be combined with the embodiments described herein are apparent from the dependent claims, the description and the drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] In order that the manner in which the above-recited features of the present disclosure may be understood in detail, a more particular description, briefly summarized above, may be had by reference to the embodiments. The accompanying drawings are associated with one or more embodiments and are described below.

[0018] Figure 1 a schematic diagram showing a multi-pole device according to embodiments described herein, the multi-pole device being adapted to operate according to any of the methods described herein;

[0019] Figure 2a schematic diagram showing a multi-pole device according to embodiments described herein, the multi-pole device being adapted to operate according to any of the methods described herein;

[0020] Figure 3a to Figure 3c In the first operating mode, Figure 2 a multipole device, wherein in a first operating mode the first multipole generates a dipole field;

[0021] Figure 3d shows the dipole field produced by a conventional octupole;

[0022] Figure 4 In the second operating mode Figure 2 a multipole device, wherein in a second operating mode, the first multipole generates a quadrupole field;

[0023] Figure 5 is a schematic diagram of a charged particle beam apparatus according to an embodiment described herein;

[0024] Figure 6 is a flow chart of a method for influencing a charged particle beam according to embodiments described herein; and

[0025] Figure 7 is a flow chart of a method for influencing a charged particle beam according to embodiments described herein. DETAILED DESCRIPTION

[0026] Reference will now be made in detail to various embodiments, one or more examples of which are illustrated in the accompanying drawings. In the following description of the drawings, the same reference numerals represent the same components. In general, only the differences between the various embodiments are described. Each example is provided in an illustrative manner and is not intended to be limiting. In addition, features shown or described as part of one embodiment may be used in other embodiments or combined with other embodiments to produce further embodiments. This specification is intended to encompass such modifications and variations.

[0027] Figure 1 is a schematic diagram of a multipole device 100 for influencing a charged particle beam propagating along an optical axis A according to embodiments described herein. The multipole device 100 comprises a substrate 103 having at least one opening 102 for the charged particle beam. The at least one opening 102 extends through the substrate 103 along the optical axis A.

[0028] The multipole device 100 includes a first multipole 110 and a second multipole 120, wherein the first multipole has four or more first electrodes 111 disposed on a substrate 103, and the second multipole has four or more second electrodes 121 disposed on the substrate 103. The first electrode 111 and the second electrode 121 can be arranged on the same main surface of the substrate 103, in particular, in the same cross section perpendicular to the optical axis A. Accordingly, a charged particle beam propagating through at least one opening 102 can be affected by the first multipole 110 and by the second multipole 120 in a beam interaction space located at or near the center of the at least one opening 102.

[0029] The first multipole 110 can be an electrostatic multipole or a magnetic multipole. The second multipole 120 can be an electrostatic multipole or a magnetic multipole. In some embodiments, both the first multipole 110 and the second multipole 120 are electrostatic multipoles. The electrostatic multipole is configured to affect the charged particle beam with an electric field, and the electrodes of the electrostatic multipole are typically typical conductors (e.g., conductors or tracks) that can be set at a predetermined potential. The magnetic multipole is configured to affect the charged particle beam with a magnetic field, and the electrodes of the magnetic multipole are typically magnets (e.g., coils) that can provide a predetermined magnetic field.

[0030] like Figure 1 Schematically depicted, the first electrodes 111 of the first multipole 110 can be arranged at equidistant angular positions around the at least one opening 102, and the second electrodes 121 of the second multipole 120 can be arranged at equidistant angular positions around the at least one opening 102. For example, if the first multipole 110 and the second multipole 120 are quadrupoles (e.g. Figure 1 As shown), the four first electrodes 111 can be arranged so that two adjacent first electrodes enclose an angle of 90° relative to the optical axis A (for example, the first electrodes are arranged at positions θ1=0°, 90°, 180°, 270°), and the four second electrodes 121 can be arranged so that two adjacent second electrodes enclose an angle of 90° relative to the optical axis A (for example, the second electrodes are arranged at positions θ2=45°, 135°, 225°, 315°).

[0031] Four or more first electrodes 111 and four or more second electrodes 121 are alternately arranged around at least one opening 102. In the figure, the first electrodes 111 are shown with a first cross-section line and the second electrodes 121 are shown with a second cross-section line, so that the alternating arrangement of the first electrodes 111 and the second electrodes 121 around at least one opening can be clearly seen.

[0032] Accordingly, the multipole device 100 comprises two different multipoles arranged on the same substrate in a staggered manner, wherein the substrate forms a support for the electrodes. Since the two different multipoles are arranged on the same substrate in the same profile and interact with the charged particle beam in the same beam interaction region, space can be saved and a compact multipole device can be provided. For example, a multipole device with at least two different multipoles can be placed in or near an objective lens that is usually limited in space.

[0033] "Multipole" can be understood as an arrangement of electrodes (e.g., electrodes for providing electric and / or magnetic fields) configured to affect a charged particle beam in a particular manner. The multipole of multipole device as described herein has at least four electrodes respectively. For example, the multipole can be a quadrupole with four electrodes, an octupole with eight electrodes, or a higher order multipole, such as 12 poles or 16 poles.

[0034] A quadrupole with four electrodes can naturally be used to generate a quadrupole field, for example, for aberration correction (e.g., astigmatism correction), but a quadrupole can also be used to generate a dipole field that can be applied in an optional direction. Accordingly, a quadrupole can be used as a beam deflector for deflecting a beam in an optional deflection direction. Similarly, an octopole can naturally be used to generate an octopole field, but an octopole can also be used to generate a quadrupole field that acts in an optional direction (e.g., for astigmatism correction), and an octopole can also be used to generate a dipole field that acts in an optional direction (e.g., for deflecting a charged particle beam in an optional deflection direction).

[0035] According to embodiments described herein, two multipoles (which are at least quadrupoles or higher order multipoles) are arranged in the same cross-section on the same substrate, so that a charged particle beam can be affected in at least two different ways within a small beam interaction space using one compact multipole device. For example, the first multipole can be configured for beam correction and the second multipole can be configured for beam alignment; or, the first multipole can be configured for deflecting the beam to a specific area of ​​interest on a sample ("beam shifting"), and the second multipole can be configured for scanning the beam in a specific area of ​​interest on the sample ("beam scanning"). Therefore, according to embodiments described herein, a flexible and compact multipole device is provided.

[0036] The multipole device 100 may further include a first power supply arrangement 116 and a second power supply arrangement 126, the first power supply arrangement 116 being used to connect the first electrode 111 of the first multipole 110 to the first voltage supply 115, and the second power supply arrangement 126 being used to connect the second electrode 121 of the second multipole 120 to the second voltage supply 125. Connecting each of the first multipole and the second multipole to a corresponding separate voltage supply is beneficial to the control of the corresponding multipole, and ensures that two different multipoles are actually provided. For example, when the first multipole and the second multipole are connected to different voltage supplies, it can be ensured that the first electrode 111 of the first multipole can be excited and controlled simultaneously using a corresponding predetermined voltage, and will not negatively affect the voltage supply of the second electrode of the second multipole, or be negatively affected by the voltage supply of the second electrode of the second multipole. In addition, the first voltage supply 115 can be specifically adapted for operation of the first multipole (the operation can be, for example, a strong and slowly varying beam deflection or a periodically constant beam deflection that is beneficially performed by a low-speed high-voltage power supply, also referred to herein as "beam displacement"), while the second voltage supply 125 can be specifically adapted for operation of the second multipole (the operation can be, for example, a rapid scanning of a charged particle beam that is beneficially performed by a high-speed low-voltage power supply, also referred to herein as "beam scanning").

[0037] Accordingly, even if Figure 1 The multipolar device 100 comprises a total of eight electrodes arranged around at least one opening 102, Figure 1 The multipole device is also substantially different from a conventional octopole, which has eight electrodes powered by a single voltage supply and can therefore only be excited in one way at a time, for example for deflection or for beam correction. In addition, since the conventional octopole is powered by a voltage supply with eight output terminals, voltage changes at some of the output terminals will also affect other output terminals, so that the conventional octopole only allows the application of one common field distribution provided by all electrodes of the octopole at a time. Compared with the conventional octopole, Figure 1 The multipole device 100 includes two different quadrupoles, which can be completely independently controlled and operated by connecting the two different quadrupoles to corresponding voltage supplies via corresponding power supply arrangements. Accordingly, each quadrupole can be customized for a specific job, and changes in the output voltage of the output terminal of the first voltage supply will not affect the output terminal of the second voltage supply, so that the first multipole and the second multipole can be independently controlled, thereby allowing more precise and reliable beam control.

[0038] Specifically, the first multipole 110 may be excited to provide a first field distribution for affecting the charged particle beam in a first manner, and the second multipole 120 may be excited (simultaneously or sequentially, as appropriate) to provide a second field distribution for affecting the charged particle beam in a second manner.

[0039] The multipole device 100 described herein can be used to influence a charged particle beam, in particular an electron beam, propagating along an optical axis A as described as follows: the charged particle beam can be guided through at least one opening 102 of the multipole device 100, wherein the multipole device 100 includes a first multipole 110 having four or more first electrodes 111 and a second multipole 120 having four or more second electrodes 121 arranged in a cross section, and the four or more first electrodes 111 and the four or more second electrodes 121 are alternately arranged around the at least one opening 102.

[0040] The first multipole 110 may be excited to provide a first field distribution for affecting the charged particle beam in a first manner. Simultaneously or sequentially, the second multipole 120 may be excited to provide a second field distribution for affecting the charged particle beam in a second manner.

[0041] Affecting the charged particle beam in a first manner can be selected from the group consisting of the following: beam deflection, beam scanning, aberration correction, stigmation, collimation, focusing, beam alignment, and blanking. Affecting the charged particle beam in a second manner can be selected from the group consisting of the following: beam deflection, beam scanning, aberration correction, stigmation, collimation, focusing, beam alignment, and blanking. The second manner is usually different from the first manner. For example, the first field distribution can cause the displacement of the charged particle beam to a specific area of ​​interest of the sample in the xy plane (which is the plane of the sample), and the second field distribution can cause the rapid scanning of the beam on the sample in the area of ​​interest. In another example, the first field distribution can cause the aberration correction of the charged particle beam, for example, astigmatism correction, and the second field distribution can cause the rapid beam scanning on the sample, or cause the beam alignment of the charged particle beam to propagate along a predetermined beam path. Other examples of affecting the charged particle beam in two different ways by two multipoles are possible.

[0042] In some embodiments that may be combined with other embodiments described herein, the first field distribution and / or the second field distribution can be selected from the group consisting of: a dipole field with an optional azimuth, a quadrupole field with an optional azimuth, and an octopole field. For example, the first field distribution can be a dipole field with an optional azimuth, so that the charged particle beam is deflected in a specific direction defined by the optional azimuth. For example, the second field distribution can be a rapidly changing dipole field for providing a beam scan on a sample (e.g., a raster scan in an xy plane defined by the sample).

[0043] In some embodiments that may be combined with other embodiments described herein, the first multipole 110 and the second multipole 120 are excited simultaneously to provide a first field distribution superimposed on the second field distribution. Therefore, the charged particle beam can be affected in two different ways by two superimposed field distributions applied by the first multipole and the second multipole at the same time. For example, the first field distribution can be a quadrupole field providing astigmatism correction, and the second field distribution can be a dipole field causing beam scanning, so that the charged particle beam is corrected and scanned by the multipole device at the same time.

[0044] In some embodiments, the first field distribution and / or the second field distribution are dipole fields. In other words, the first multipole (it includes at least four electrodes) is configured to apply the first dipole field on the charged particle beam, and / or, particularly simultaneously, the second multipole (it includes at least four electrodes) is configured to apply the second dipole field on the charged particle beam. The two dipole fields can have different intensities, directions and / or can change at different speeds. The two dipole fields can be applied for different purposes, for example, for beam deflection and orientation to a predetermined area of ​​interest ("beam displacement") on the sample, and for rapid scanning of the charged particle beam on the sample. Therefore, the two dipole fields can have substantial differences in intensity and speed of change, which will be described in further detail below.

[0045] In particular, the first field distribution may be a first dipole field and the second field distribution may be a second dipole field, the first dipole field being stronger than the second dipole field. For example, at least temporarily, the ratio between the maximum field strength of the first dipole field and the maximum field strength of the second dipole field is 5:1 or more, in particular 10:1, or even 20:1 or more. The maximum field strength of the dipole field is typically located at the position of the optical axis A, typically approximately in the center of the at least one opening 102.

[0046] In some embodiments, the first voltage supply 115 and the second voltage supply 125 can be different types of voltage supply. For example, the first voltage supply and the second voltage supply can be configured to provide different maximum output voltages and / or different maximum output voltage change speeds. In particular, the second voltage supply 125 can be applicable to an output voltage that changes faster than the first voltage supply 115. Alternatively or additionally, the first voltage supply 115 can be applicable to a maximum output voltage higher than the second voltage supply 125. For example, the first voltage supply 115 can be configured to be used for a maximum output voltage of 100V and / or a maximum voltage change speed lower than 1GHz (for example, in the MHz range). Alternatively or additionally, the second voltage supply 125 can be configured to be used for a maximum output voltage of 50V or less, especially 20V or less, or even 10V or less, and / or a maximum voltage change speed exceeding 1GHz. In particular, the first voltage supply 115 can be a low-speed high-voltage power supply, and / or the second voltage supply 125 can be a high-speed low-voltage power supply.

[0047] In some embodiments, the first power supply arrangement 116 is configured for a higher voltage than the second power supply arrangement 126. In particular, the first power supply arrangement 116 may include a high voltage connection between each of the first electrodes 111 and the first voltage supplier 115. For example, the high voltage connection may be applicable to a voltage of 100V or higher. The second power supply arrangement 126 may include a low voltage connection between each of the second electrodes 121 and the second voltage supplier 125. For example, the low voltage connection may be applicable to a voltage of 50V or less. In some embodiments, the cross-sectional area of ​​the high voltage connection is greater than the cross-sectional area of ​​the low voltage connection. Alternatively or additionally, the second power supply arrangement 126 may be configured as a high-speed connection between each of the second electrodes 121 and the second voltage supplier 125. For example, the high-speed connection of the second power supply arrangement 126 may be shielded and / or may have impedance matching, thereby allowing the voltage change speed in the GHz range to be reliably transmitted to the second electrode of the second multipole.

[0048] Figure 1 An embodiment of a multipole device 100 is shown, which comprises two independent quadrupoles arranged in a staggered manner in one cross section. Space can be saved, and charged particle beams can be influenced synchronously or sequentially in different ways in the same beam interaction space.

[0049] Figure 2 Another embodiment of a multipole device 200 for influencing a charged particle beam, in particular for influencing an electron beam, is shown according to embodiments described herein. Figure 1The multi-pole device 100 is similar to that in the embodiment of the present invention, so reference may be made to the above explanation and the description will not be repeated here.

[0050] The multipole device 200 comprises a substrate 103 having at least one opening 102 for a charged particle beam propagating along an optical axis A. Eight first electrodes 211 of a first multipole 210 are arranged on the substrate 103, and eight second electrodes 221 of a second multipole 220 are arranged on the substrate 103, in particular, on the same main surface of the substrate in an equiangular manner around the at least one opening 102. The eight first electrodes 211 and the eight second electrodes 221 are alternately arranged around the at least one opening 102.

[0051] therefore, Figure 2 The multipole device 200 includes two independent octopoles arranged in a cross section in a staggered manner. Space can be saved, and charged particle beams can be affected synchronously or sequentially in different ways in the same beam interaction space.

[0052] According to embodiments described herein, the first multipole 210 may be excited to provide a first field distribution for influencing the charged particle beam in a first manner, and the second multipole 220 may be excited to provide a second field distribution for influencing the charged particle beam in a second manner, in particular, the second manner being different from the first manner. For example, the first multipole 210 may apply a first dipole field on the charged particle beam for deflecting the charged particle beam to a region of interest, e.g., of a sample to be examined. The second multipole 220 may apply a second dipole field on the charged particle beam for scanning the charged particle beam over the sample, in particular over the region of interest, e.g., in a raster scan pattern. The charged particle beam may be excited in the manner described above with reference to Figure 1 The first field distribution can be superimposed on the second field distribution by exciting the first multipole and the second multipole simultaneously.

[0053] According to some embodiments described herein, the first multipole 210 is a first octupole having eight first electrodes 211, the second multipole 220 is a second octupole having eight second electrodes 221, and the first octupole and the second octupole are independent octupole that can be independently controlled and operated. Accordingly, the multipole device 200 includes a total of 16 poles arranged around at least one opening 102, eight first poles belonging to the first octupole and eight second poles belonging to the second octupole, wherein the eight poles of the first octupole and the eight poles of the second octupole are alternately arranged around the at least one opening 102.

[0054] In some embodiments, the first multipole 210 and the second multipole 220 are electrostatic multipoles, and the first electrode 211 and the second electrode 221 are conductive portions disposed on a substrate and configured to be respectively set at a predetermined potential. "Substrate" may be understood as a supporting body, such as a thin plate, for supporting the electrodes of the first multipole and the second multipole thereon. The substrate is not necessarily round (as depicted in the figure), but may also have different shapes. The substrate may include an insulator surface on which the electrodes are arranged.

[0055] The first multipole 210 can be configured to provide a first dipole field for deflecting the charged particle beam, in particular for directing the beam to a predetermined area of ​​interest of the sample within a predetermined time period ("beam displacement"), and the second multipole 220 can be configured to provide a second dipole field superimposed on the first dipole field for scanning the charged particle beam on the sample.

[0056] The multipole device 200 described herein allows the rapid scanning of the charged particle beam performed with a predetermined scanning pattern to be superimposed on the large beam deflection in a predetermined optional deflection direction performed by the first multipole, especially the slow deflection and rapid scanning of the charged particle beam are performed simultaneously. Typically, the deflection is relatively slow but a relatively high deflection voltage is used to deflect the charged particle beam to a predetermined area of ​​interest on the sample. Typically, the scanning voltage changes relatively quickly but has a relatively low maximum deflection voltage, for example, rapidly in a stepped or continuous change between -10V and +10V. Accordingly, it is beneficial to use two separately controllable eight poles, each of which is powered by a corresponding power supply arrangement and a corresponding voltage supply, so that each eight pole is customized according to the work to be performed. Two independently operated and controllable eight poles are provided according to the embodiments described herein, and the eight poles have electrodes arranged in the same profile.

[0057] A first voltage supply arrangement 116 may be provided for connecting the first electrode 211 with the first voltage supply 115, and a second voltage supply arrangement 126 may be provided for connecting the second electrode 221 with the second voltage supply 125. Thus, two independently controllable octopoles are arranged in a staggered manner in one cross section.

[0058] The first multipole and the second multipole may be excited simultaneously to provide a first field distribution and a second field distribution for synchronously affecting the charged particle beam in a first manner and a second manner.

[0059] Specifically, at least one or both of the first field distribution and the second field distribution may be a dipole field. The first field distribution may be a slowly varying or periodically constant dipole field, and the second field distribution may be a rapidly varying dipole field for scanning.

[0060] In some embodiments, the first field distribution is a first dipole field and the second field distribution is a second dipole field, the first dipole field being, at least temporarily, stronger than the second dipole field by, for example, 5 or more times, or 10 or more times. The first field distribution may be a dipole field that deflects the charged particle beam to a predetermined region of interest of the sample to be examined, and the second field distribution may be a dipole field that scans the charged particle beam over the sample, particularly in the region of interest.

[0061] In some embodiments, the first field distribution is maintained for a predetermined time (eg, one second or longer) to deflect the charged particle beam to a predetermined region of interest of the sample, while the second field distribution is changed to scan the charged particle beam over the predetermined region of interest.

[0062] After scanning the region of interest by changing the second field distribution (e.g., in a raster scanning manner), the first field distribution can be changed to be used to deflect the charged particle beam to a predetermined second region of interest of the sample to be inspected. The changed first field distribution can be maintained for a predetermined time (e.g., one second or longer) while the second field distribution is changed to scan the charged particle beam over the predetermined second region of interest.

[0063] The sample inspection procedure can then be performed accordingly by changing the first field distribution provided by the first multipole to direct the charged particle beam to different regions of interest. The first field distribution can be maintained for a predetermined time for each region of interest, so that the corresponding region of interest can be inspected by quickly changing the second field distribution to scan the charged particle beam in the corresponding region of interest on the sample. This allows inspection of large sample surfaces by correspondingly changing the dipole fields provided by the first and second multipoles.

[0064] Reliable beam deflection superimposed by fast beam scanning can be provided by connecting the first multipole to a first voltage supply suitable for relatively slow but large beam deflection and by connecting the second multipole to a second voltage supply suitable for fast voltage changes for beam scanning with a relatively low maximum voltage.

[0065] Figure 3a -c shows the first mode of operation. Figure 2 In the multipole device 200, in the first operating mode, a first field distribution, i.e., a first dipole field, is provided by the first electrode of the first multipole 210, while a small voltage or zero voltage V2-0 is applied to the second electrode of the second multipole 220. The dipole field can be provided by applying a voltage of V1*sin(θ1) to the first electrode of the first multipole, where θ1 refers to the angular position of the corresponding first electrode (the position of θ1=0 can be arbitrarily selected for applying a dipole field in an optional direction), and V1 is the maximum voltage provided by the first voltage supply 115 at a specific time. Figure 3aSchematically shown, the following voltage V is applied to the eight electrodes of the first multipole 210 to provide a dipole field: V1*sin0° = 0 V1*sin45° = +0.707*V1 V1*sin90° = +V1 V1*sin135° = +0.707*V1 V1*sin180° = 0 V1*sin225° = -0.707*V1 V1*sin270° = -V1 V1*sin315° = -0.707*V1 At the same time, a voltage smaller than the voltage V1 (for example, zero voltage, V2 = 0, as Figure 3a depicted) is applied to the eight second electrodes of the second multipole 220, and the resulting field distribution is Figure 3a depicted by electric field lines. As Figure 3a shown, an electric dipole field is generated in the central region of the multipole device 200 through which the optical axis A extends, such that the dipole field acts on a charged particle beam propagating along the optical axis A, causing a beam displacement in the x-y plane. Instead of Figure 3a V2 = 0 depicted in, it is also possible to apply a small variable voltage V2*sin(θ2) (in particular, where V2 < V1) to the second electrodes to cause beam scanning.

[0066] By adjusting the maximum voltage V1 provided by the first voltage supplier, the deflection intensity caused by the first multipole 210 can be appropriately set. In addition, if θ2 is replaced by θ2 + ε, where ε is a phase term, the deflection direction can be appropriately set in the x-y plane. The field distribution示例性 shown in Figure 3a causes a beam deflection in the x direction.

[0067] It should be noted that since the second electrodes of the second multipole 220 set at a relatively small potential or zero potential ( Figure 3a V2 ~ 0V in) are respectively arranged between two adjacent first electrodes of the first multipole 210, the dipole field generated by the first multipole 210 of the multipole device 200 is different from the dipole field generated by a conventional octupole (schematically depicted in Figure 3d ). Therefore, as Figure 3bAs schematically depicted by the continuous line in , the potential on the annular line having a radius r (r=electrode radius) and extending around the optical axis A changes repeatedly between V=V1*sin(θ1) and zero at the positions of the first electrode and the second electrode. It is worth noting that in order to simplify the calculation, the electrodes are modeled as infinitely small (i.e., point electrodes) here, and it is assumed that there is a linear voltage change between two adjacent electrodes.

[0068] Relatively speaking, if Figure 3b As schematically depicted by the dashed lines in , a conventional octupole relies on an angle θ on a circular line having a radius r around the optical axis A to produce a substantially sinusoidal-shaped potential.

[0069] Once the voltage on a circular wire with radius r (r=electrode radius) is known, the multipolar components of the resulting total field distribution at the location of the optical axis A can be calculated by Fourier analysis. Figure 3c Shows Figure 3a The intensity of the harmonics of the field distribution. Figure 3c As shown, the fundamental dipole has a coefficient of about 0.5 and all harmonics below the 7th order are zero, but a clearly visible 7th order harmonic with a coefficient of about -0.3 and a clearly visible 9th order harmonic with a coefficient less than 0.2 are produced. Since the field of the 7th order harmonic is related to R -6 (R is the distance of the electron from the optical axis A), the effect of the 7th order harmonic is extremely small and essentially negligible. The 9th order harmonic will also have a very small effect. Accordingly, according to the embodiments described herein, the first multipole 210 of the multipole device 200 can generate a generally good dipole field even when a relatively small voltage or zero voltage is simultaneously applied to the second electrode of the second multipole 220.

[0070] In some embodiments, the second dipole field is generated by the second multipole 220, while the first dipole field is generated by the first multipole. Specifically, a voltage of V2*sin(θ2) is applied to the second electrode of the second multipole, θ2 refers to the angular position of the corresponding second electrode (the position of θ2=0 can be arbitrarily selected or changed to apply a dipole field in an optional direction), and V2 is the maximum voltage provided by the second voltage supply at one time. The value of V2 can change rapidly (e.g., from -V2 to +V2) to scan the charged particle beam along a straight line on the sample. In addition, the value of V2*sin(θ2) can change rapidly to raster scan the charged particle beam in the xy plane on the area of ​​interest to be inspected.

[0071] In a typical embodiment, the maximum voltage V1 provided by the first voltage supplier (which causes a slow change or a periodic constant beam displacement) is significantly greater than the maximum voltage V2 provided by the second voltage supplier (which causes a fast beam scan), for example, 5 times or more greater, or 10 times or more greater. For example, the first voltage supplier is configured to provide a maximum voltage of 100V or greater, thereby allowing a large-angle beam displacement, while the second voltage supplier can be configured to provide a maximum voltage V2 of 20V or less, or 10V or less, thereby allowing a beam scan over a predetermined (small) region of interest of the sample, for example, in order to inspect the region of interest of the sample to look for defects in the region of interest.

[0072] Figure 4 The multipole device 200 in the second operation mode is shown, Figure 2 wherein the first field distribution (i.e., the quadrupole field) is provided by the first electrode of the first multipole, while a small voltage or zero voltage V2~0 is applied to the second electrode of the second multipole. The quadrupole field can be provided by applying voltages of +V1, 0, +V1, 0, -V1, 0, -V1, 0 in this order in the circumferential direction to the first electrode. For example, the quadrupole field can be used for astigmatism correction.

[0073] The simulation shows that the quadrupole field generated by the first multipole at the position of the optical axis A is quite good, even when a small voltage (V2<V1) or substantially zero voltage (V2~0) is simultaneously applied to the second electrode of the second multipole, for example, when used for scanning a charged particle beam or for providing higher-order correction.

[0074] Accordingly, it is shown that it is possible to simultaneously affect a charged particle beam in two ways by two multipoles (e.g., quadrupoles or octupoles), which are arranged in a staggered manner in one cross-section, and this has not been considered or confirmed before. According to the embodiments described herein, space can be saved and a compact and flexibly usable multipole device is provided.

[0075] It should be understood that the multipole device described herein may include more than two multipoles on the same substrate, for example, three independently operable quadrupoles, hexapoles or octupoles in the same cross-section. The "alternating" arrangement of the first electrode and the second electrode used herein is intended to include the alternating arrangement of the first electrode, the second electrode and the third electrode (or further electrodes) around the optical axis in the circumferential direction. In addition, the multipole can be a quadrupole or a higher-order multipole, especially an octupole, but can also be a dodecapole or a hexadecapole. In addition, the multipole device may also be configured for a multi-subbeam device. In the latter case, the substrate includes more than one opening, and the first electrodes and the second electrodes of two independently operable multipoles are alternately arranged around each of the more than one opening.

[0076] According to further aspects described herein, a charged particle beam device 500 for inspecting and / or imaging a sample 10 is provided. Figure 5 A schematic diagram of a charged particle beam device 500 for examining a sample 10 , for example with an electron beam, is shown.

[0077] The charged particle beam device 500 may be an electronic inspection device configured to inspect and / or image a sample 10 placed on a sample stage 560 , for example, a scanning electron microscope (SEM).

[0078] The charged particle beam device 500 comprises a charged particle beam source 505 for generating a charged particle beam 11 propagating along an optical axis A. The charged particle beam source 505 may be an electron source, such as a cold field emitter (CFE), a thermal field emitter (TFE) or other types of electron sources.

[0079] The charged particle beam device 500 includes an objective lens 520 configured to focus the charged particle beam 11 on the sample 10. The objective lens 520 may be a magnetic objective lens, an electrostatic objective lens, or a combined magnetic and electrostatic objective lens.

[0080] A sample 10 (eg a wafer, an electronic circuit or another substrate to be inspected) may be placed on a sample stage 560. The sample stage 560 may be moved in the plane of the sample, ie in the xy plane, and / or in the z direction of the optical axis A.

[0081] The charged particle beam device 500 may include a vacuum housing 501 in which the beam optical components of the charged particle beam device 500 are arranged. The vacuum housing 501 may be evacuated to a sub-atmospheric pressure of less than 1 mbar, for example, 10 -5 mbar or lower.

[0082] The charged particle beam device 500 may include further beam optical components, such as a focusing lens 510 for collimating the charged particle beam 11, an aberration corrector for correcting beam aberrations, a beam splitter 540 for separating signal particles (e.g., secondary electrons SE and / or backscattered electrons BSE) generated when the charged particle beam 11 impacts the sample 10 from the charged particle beam 11, and / or a detector 550 for detecting signal particles.

[0083] The charged particle beam apparatus 500 further comprises a multipole device 100 (or 200) according to any of the embodiments described herein.The multipole device 100 may be arranged such that the optical axis A extends through at least one opening 102 of the multipole device.

[0084] In some embodiments, which may be combined with other embodiments described herein, the multipole device 100 may be arranged adjacent to or within the objective 520. Arranging the multipole device 100 close to or even in the objective 520 is beneficial, since larger deflection angles are possible if the multipole device is arranged close to the sample 10. A charged particle beam apparatus with a large field of view (FOV) may be provided. Figure 5 The multipole device 100 is shown at a position 2 cm or less upstream of the objective lens. Figure 5 An alternative position of the multipole device 100 in the objective lens 520 is shown in dotted lines in FIG. In general, the distance between the multipole device 100 and the objective lens 520 along the optical axis A may be 5 cm or less, so that an electron beam inspection apparatus having a large FOV may be provided.

[0085] In some embodiments, which may be combined with other embodiments described herein, the multipole device 100 is configured to deflect the charged particle beam to a region of interest on the sample by applying a first dipole field to a first electrode of the first multipole 110. Furthermore, the multipole device 100 is configured to scan the charged particle beam in the region of interest on the sample by applying a second dipole field to a second electrode of the second multipole 120, such that the first dipole field and the second dipole field are superimposed on each other.

[0086] The first dipole field is generally larger than the second dipole field (e.g., 5 or more times, or 10 or more times larger), and the second dipole field typically changes faster than the first dipole field, thereby providing a fast scanning motion of the charged particle beam 11 over the sample (e.g., having a change rate of 1 GHz or more).

[0087] The first multipole 100 can deflect the charged particle beam to different areas of interest of the sample, and maintain the corresponding first dipole field for each area of ​​interest to be inspected for a predetermined period of time. The second dipole field 120 can quickly scan the charged particle beam over each area of ​​interest (e.g., in a raster scan pattern) so that each area of ​​interest can be inspected in detail.

[0088] Figure 6 is a flow chart for illustrating a method for influencing a charged particle beam according to embodiments described herein.

[0089] In box 610, a charged particle beam is guided through at least one opening of a multipole device, wherein the multipole device includes a first multipole having four or more first electrodes and a second multipole having four or more second electrodes, the first multipole and the second multipole are arranged in the same cross-section, and the four or more first electrodes and the four or more second electrodes are alternately arranged around the at least one opening.

[0090] In block 620, the first multipole is excited to provide a first field distribution for affecting the charged particle beam in a first manner. For example, the first field distribution may be a first dipole field, and the first manner may be a beam deflection of the charged particle beam to a predetermined region of interest of the sample. Alternatively, the first field distribution may be a quadrupole field, and the first manner may be an astigmatism correction or another aberration correction.

[0091] In block 630, a second multipole is excited to provide a second field distribution for affecting the charged particle beam in a second manner. For example, the second field distribution may be a second dipole field that may be rapidly varied for scanning the charged particle beam in a region of interest on the sample.

[0092] The excitation of the first multipole and the second multipole in blocks 620 and 630 can occur simultaneously, so that the charged particle beam is affected in two ways simultaneously by one multipole device. Specifically, by arranging two independently controlled multipoles in the same cross section on the same substrate, a "slow" beam deflection can be superimposed on a "fast" beam scan.

[0093] Figure 7 is a flow chart for illustrating a method for influencing a charged particle beam according to embodiments described herein.

[0094] In box 710, a charged particle beam is guided through at least one opening of a multipole device, wherein the multipole device includes a first multipole having four or more first electrodes and a second multipole having four or more second electrodes, the first multipole and the second multipole are arranged in the same cross-section, and the four or more first electrodes and the four or more second electrodes are alternately arranged around the at least one opening.

[0095] In block 720, the charged particle beam is deflected to a first region of interest (ROI) of the sample by applying a first dipole field to the first multipole. The first dipole field is maintained during block 730 for a period of, for example, 1 second or longer.

[0096] In block 730, the charged particle beam is scanned over the first region of interest (eg, in a raster scan pattern) by applying a rapidly varying scan field to the second multipole. The first region of interest is inspected, and, for example, defects of the sample in the first region of interest may be found.

[0097] In block 740, the charged particle beam is deflected to a second region of interest (ROI) of the sample by applying another dipole field to the first multipole. The remaining dipole field may be maintained during block 750 for a period of, for example, 1 second or longer.

[0098] In block 750, the charged particle beam is scanned over a second region of interest (eg, in a raster scan pattern) by applying a rapidly varying scan field to a second multipole. The second region of interest is inspected, and, for example, defects of the sample in the second region of interest may be found.

[0099] The method can be continued accordingly by examining further regions of interest of the sample.

[0100] Specifically, the following embodiments are described herein: Embodiment 1: A method for influencing a charged particle beam propagating along an optical axis, the method comprising: guiding the charged particle beam through at least one opening of a multipole device, the multipole device comprising a first multipole having four or more first electrodes and a second multipole having four or more second electrodes arranged in the same cross-section, the four or more first electrodes and the four or more second electrodes being alternately arranged around the at least one opening; and at least one or both of the following steps: exciting the first multipole to provide a first field distribution for influencing the charged particle beam in a first manner, and exciting the second multipole to provide a second field distribution for influencing the charged particle beam in a second manner. Embodiment 2: The method according to embodiment 1, wherein the first multipole is a first octupole comprising eight first electrodes, and / or the second multipole is a second octupole comprising eight second electrodes. In particular, the first multipole and the second multipole are octupole. Alternatively, the first multipole and the second multipole may be quadrupoles. Alternatively, the first multipole and the second multipole may be 16-poles. Embodiment 3: A method according to embodiment 1 or 2, wherein affecting the charged particle beam in a first manner and affecting the charged particle beam in a second manner are selected from the group consisting of: beam deflection, beam scanning, aberration correction, stigmation, collimation, focusing, beam alignment, and blanking. In particular, affecting the charged particle beam in a first manner may include beam deflection, and affecting the charged particle beam in a second manner may include beam scanning. Alternatively, beam deflection may be combined with aberration correction (e.g., stigmation). Embodiment 4: The method according to any one of embodiments 1 to 3, wherein the first field distribution and the second field distribution are selected from the group consisting of: a dipole field with a selectable azimuth angle, a quadrupole field with a selectable azimuth angle, and an octopole field. Embodiment 5: The method of any one of embodiments 1 to 4, wherein the first multipole and the second multipole are excited simultaneously to provide a first field distribution superimposed on the second field distribution. Embodiment 6: The method according to any one of embodiments 1 to 5, wherein at least one or both of the first field distribution and the second field distribution are dipole fields. In particular, both the first field distribution and the second field distribution may be dipole fields. Embodiment 7: The method according to any one of embodiments 1 to 6, wherein the first field distribution is a first dipole field and the second field distribution is a second dipole field, the first dipole field being stronger than the second dipole field. In particular, the ratio between the maximum field strength of the first dipole field and the maximum field strength of the second dipole field is 5:1 or greater, in particular 10:1. Embodiment 8: A method according to any one of embodiments 1 to 7, wherein a voltage of V1*sin(θ1) is applied to the first electrode of the first multipole, θ1 refers to the angular position of the corresponding first electrode in the circumferential direction, and V1 is an adjustable deflection voltage. Alternatively or additionally, a voltage of V2*sin(θ2) is applied to the second electrode of the second multipole, θ2 refers to the angular position of the corresponding second electrode in the circumferential direction, and V2 is a variable scanning voltage of 20V or less. Embodiment 9: The method according to any one of embodiments 1 to 8, wherein the first field distribution is a dipole field that deflects the charged particle beam, and the second field distribution is a dipole field that scans the charged particle beam over the sample. Beam deflection and scanning can be performed simultaneously by exciting both the first multipole and the second multipole. Embodiment 10: The method according to Embodiment 9, wherein the first field distribution is maintained for a predetermined time to deflect the charged particle beam to a first region of interest of the sample, while the second field distribution is changed to scan the charged particle beam over the first region of interest. Embodiment 11: The method according to embodiment 10 further comprises: changing the first field distribution to deflect the charged particle beam to a second region of interest of the sample, and then maintaining the first field distribution for a predetermined time while the second field distribution is changed to scan the charged particle beam over the second region of interest. Embodiment 12: A method according to any one of embodiments 1 to 11, wherein the first electrode of the first multipole is connected to a first voltage supplier, in particular to a low-speed high-voltage supplier, and the second electrode of the second multipole is connected to a second voltage supplier, in particular to a high-speed low-voltage supplier. The method according to the above-described embodiments may be performed by any of the multipole devices and / or charged particle beam apparatuses described herein. Embodiment 13: A multipole device for influencing a charged particle beam propagating along an optical axis, the multipole device comprising: a substrate having at least one opening for the charged particle beam, the at least one opening extending through the substrate along the optical axis; a first multipole, the first multipole comprising four or more first electrodes arranged on the substrate; a second multipole, the second multipole comprising four or more second electrodes arranged on the substrate, the four or more first electrodes and the four or more second electrodes being alternately arranged around the at least one opening; a first power supply arrangement, the first power supply arrangement being used to connect the first electrode to a first voltage supplier; and a second power supply arrangement, the second power supply arrangement being used to connect the second electrode to a second voltage supplier. The multipolar device may be configured to operate according to any of the methods described herein. Embodiment 14: The multipole device according to embodiment 13, wherein the first multipole is a first octopole comprising eight first electrodes, and / or the second multipole is a second octopole comprising eight second electrodes. Embodiment 15: The multipole device according to embodiment 13 or 14, wherein the first multipole and the second multipole are electrostatic multipoles, and the first electrode and the second electrode are conductive parts provided on the substrate and are configured to be set at a predetermined potential. Embodiment 16: A multipole device according to any one of embodiments 13 to 15, wherein the first voltage supply is a low-speed high-voltage supply, in particular configured for a maximum voltage of 100V or greater and a variation speed of less than 1GHz, and wherein the second voltage supply is a high-speed low-voltage power supply, in particular configured for a maximum voltage of 50V or less and a variation speed greater than 1GHz. Embodiment 17: A multipolar device according to any one of Embodiments 13 to 16, wherein the first power supply arrangement includes a high voltage connection between each of the first electrodes and the first voltage supply, and wherein the second power supply arrangement includes a high speed connection between each of the second electrodes and the second voltage supply. Embodiment 18: A multipole device according to any one of embodiments 13 to 16, wherein the first multipole is configured to provide a first dipole field for beam deflection, and the second multipole is configured to provide a second dipole field superimposed on the first dipole field, wherein the second dipole field is used to scan the charged particle beam on the sample. Embodiment 19: The multipole device according to any one of embodiments 13 to 18, wherein the first multipole and the second multipole are independently controllable multipoles. Embodiment 20: A charged particle beam device for inspecting or imaging a sample with a charged particle beam, the charged particle beam device comprising: a charged particle beam source, which is used to generate a charged particle beam; an objective lens, which is used to focus the charged particle beam on the sample; and a multipole device for influencing the charged particle beam according to any of the embodiments described herein. Embodiment 21: A charged particle beam apparatus according to Embodiment 20, wherein the multipole device is arranged adjacent to the objective lens or within the objective lens. Embodiment 22: The charged particle beam apparatus according to Embodiment 20 or 21, wherein the multipole device is configured to deflect the charged particle beam to a region of interest of the sample while scanning the charged particle beam over the region of interest.

[0101] While the foregoing is directed to embodiments, other and further embodiments may be devised without departing from the basic scope of the embodiments, and the scope of the embodiments is determined by the claims that follow.

Claims

1. A method for influencing a charged particle beam propagating along an optical axis, the method comprising the following steps: directing the charged particle beam through at least one opening of a multipole device, the multipole device comprising a first multipole having four or more first electrodes and a second multipole having four or more second electrodes arranged in a same cross-section, the four or more first electrodes and the four or more second electrodes being alternately arranged around the at least one opening; And at least one of the following steps: exciting the first multipole to provide a first field distribution for affecting the charged particle beam in a first manner, and The second multipole is excited to provide a second field distribution for affecting the charged-particle beam in a second manner. 2 . The method of claim 1 , wherein the first multipole is a first octopole comprising eight first electrodes, and the second multipole is a second octopole comprising eight second electrodes.

3. The method of claim 1 or 2, wherein affecting the charged particle beam in the first manner and affecting the charged particle beam in the second manner are selected from a group consisting of: beam deflection, beam scanning, aberration correction, astigmatism elimination, collimation, focusing, beam alignment, and blanking.

4. The method of any one of claims 1 to 3, wherein the first field distribution and the second field distribution are selected from the group consisting of: a dipole field with a selectable azimuth angle, a quadrupole field with a selectable azimuth angle, and an octopole field.

5. The method of any one of claims 1 to 4, wherein the first multipole and the second multipole are excited simultaneously to provide the first field distribution superimposed on the second field distribution for synchronously affecting the charged particle beam in the first manner and the second manner.

6. The method of any one of claims 1 to 5, wherein at least one or both of the first field distribution and the second field distribution are dipole fields.

7. The method of claim 6, wherein the first field distribution is a first dipole field and the second field distribution is a second dipole field, the first dipole field being stronger than the second dipole field, in particular, wherein, At least temporarily, a ratio between a maximum field strength of the first dipole field and a maximum field strength of the second dipole field is 5:1 or greater.

8. The method according to claim 6 or 7, wherein a voltage of V1*sin(θ1) is applied to the first electrodes of the first multipole, θ1 is the angular position of the corresponding first electrode in the circumferential direction, and V1 is an adjustable deflection voltage, and Wherein a voltage of V2*sin(θ2) is applied to the second electrodes of the second multipole, θ2 is an angular position of the corresponding second electrode in the circumferential direction, and V2 is a varying scanning voltage of 20 V or less.

9. The method of any one of claims 1 to 8, wherein the first field distribution is a dipole field that deflects the charged particle beam, and the second field distribution is a dipole field that scans the charged particle beam over a sample.

10. The method of claim 9, wherein the first field distribution is maintained for a predetermined time to deflect the charged particle beam to a predetermined first region of interest of the sample, while the second field distribution is changed to scan the charged particle beam over the predetermined first region of interest.

11. The method of claim 10, further comprising: The first field distribution is changed to deflect the charged particle beam to a second region of interest of the sample, and then the first field distribution is maintained for a predetermined time while the second field distribution is changed to scan the charged particle beam over the second region of interest.

12. A method as claimed in any one of claims 1 to 11, wherein the first electrode of the first multipole is connected to a first voltage supplier, in particular to a high-voltage power supply, which is configured to be used at least for voltages between 0V and 100V or more, and the second electrode of the second multipole is connected to a second voltage supplier different from the first voltage supplier, in particular to a high-speed power supply, which is configured to be used for a variation speed higher than 1 GHz.

13. A multipole device for influencing a beam of charged particles propagating along an optical axis, the multipole device comprising: a substrate having at least one opening for the charged particle beam, the at least one opening extending through the substrate along the optical axis; a first multipole comprising four or more first electrodes disposed on the substrate; a second multipole, the second multipole comprising four or more second electrodes disposed on the substrate, the four or more first electrodes and the four or more second electrodes being alternately arranged around the at least one opening; a first power supply arrangement for connecting the first electrode to a first voltage supply; as well as A second power supply arrangement for connecting the second electrode to a second voltage supply.

14. The multipole device of claim 13, wherein the first multipole is a first octopole comprising eight first electrodes, and the second multipole is a second octopole comprising eight second electrodes.

15. The multipole device according to claim 13 or 14, wherein the first multipole and the second multipole are electrostatic multipoles, and the first electrode and the second electrode are conductive portions provided on the substrate and are configured to be set at a predetermined potential.

16. A multipole device as claimed in any one of claims 13 to 15, wherein the first voltage supply is a low-speed high-voltage power supply, in particular configured for a maximum voltage of 100 V or more and a variation speed of less than 1 GHz, and wherein the second voltage supply is a high-speed low-voltage power supply, in particular configured for a maximum voltage of 50 V or less and a variation speed greater than 1 GHz.

17. A multipole device as described in any one of claims 13 to 16, wherein the first multipole is configured to provide a first dipole field for beam deflection, and the second multipole is configured to provide a second dipole field superimposed on the first dipole field, and the second dipole field is used to scan the charged particle beam on a sample.

18. The multipole device of any one of claims 13 to 17, wherein the first multipole and the second multipole are independently controllable multipoles.

19. A charged particle beam device for inspecting or imaging a sample with a charged particle beam, the charged particle beam device comprising: a charged particle beam source, the charged particle beam source being used to generate the charged particle beam; an objective lens, the objective lens being used to focus the charged particle beam on the sample; as well as A multipole device for influencing the charged particle beam as claimed in any one of claims 13 to 18.

20. Charged particle beam apparatus according to claim 19, wherein the multipole device is arranged adjacent to or within the objective lens.

21. The charged particle beam apparatus according to claim 19 or 20, wherein the multipole device is configured to deflect the charged particle beam to a region of interest of the sample while scanning the charged particle beam over the region of interest.

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