A single-cavity fully automatic rapid annealing equipment

Abstract

This invention discloses a single-cavity fully automatic rapid annealing device in the field of wafer annealing technology, comprising a frame, an annealing furnace installed within the frame, and the annealing furnace including: a furnace body installed within the frame with a furnace door at one end, a drive structure installed at the bottom of the furnace body, and an opening and closing electric cylinder installed between the furnace door and the furnace body; a quartz support with a movable support attached to its top via a snap-fit; an irradiation element installed on top of the movable support, with a wafer carrier eccentrically positioned on top of the irradiation element; a transmission structure installed within the movable support and capable of axially sliding connection with the drive structure; a heating source installed on top of the furnace body; a lampshade with a cavity inside; and a synchronization structure installed between the lampshade and the transmission structure. The device can drive the wafer to rotate around the center of the irradiation area and rotate on its own axis, allowing each part of the wafer to sequentially pass through the high-heat zone at the center of the irradiation area, improving the uniformity of wafer heating; simultaneously, it can shorten the distance between the wafer and the heating source, reducing wafer heating efficiency.

Description

Technical Field

[0001] This invention relates to the field of wafer annealing technology, specifically to a single-cavity fully automatic rapid annealing device. Background Technology

[0002] Rapid annealing furnaces utilize infrared lamps as a heat source, heating wafers or materials to 300℃-1200℃ in a very short time through extremely rapid heating rates. This eliminates internal defects in the wafers or materials, improving product performance. It is a type of equipment used in semiconductor chip manufacturing, commonly used for ion implantation annealing, rapid annealing after ITO coating, and oxide and nitride growth. Rapid annealing furnaces are key equipment in semiconductor chip manufacturing processes. Conventional annealing furnaces in existing technologies have slow heating rates;

[0003] Because the light intensity of the infrared lamp gradually decreases from the center to the periphery, the heat emitted by the infrared lamp is also higher in the center than around the periphery. Currently, some wafers are placed in a fixed position in the center of the infrared lamp irradiation area (some of which involve wafer rotation). This causes the temperature of the part of the wafer in the center of the infrared lamp irradiation area to be higher than that of the periphery, resulting in uneven heating of the wafer as a whole. This can easily cause stress concentration on the wafer, leading to cracking or damage. Summary of the Invention

[0004] The technical problem of this invention is to provide a single-cavity fully automatic rapid annealing device.

[0005] To achieve the above objectives, the present invention provides the following technical solution: a single-cavity fully automatic rapid annealing device, comprising a frame, wherein a crystal boat platform, a robotic arm, a cooling station, an annealing furnace, a wafer carrier, and a lifting mechanism are installed within the frame; the annealing furnace includes:

[0006] The furnace body is installed within a frame and has a furnace door at one end. A drive structure is installed at the bottom of the furnace body, and an electric cylinder for opening and closing is installed between the furnace door and the furnace body.

[0007] A quartz bracket is installed inside the furnace door, and a movable bracket is attached to the top via a snap fastener.

[0008] An irradiation element is mounted on top of a movable support, and the wafer carrier is eccentrically positioned on top of the irradiation element;

[0009] The transmission structure is installed in the movable bracket and can be axially slidably connected to the drive structure to drive the wafer carrier to rotate and rotate around the axis of the irradiation element;

[0010] The heating source is installed on the top of the furnace body;

[0011] A lampshade is installed on the top of the furnace body and located outside the heating source. A cavity is provided inside the lampshade. The gas in the cavity adjusts the height of the lampshade by thermal expansion and contraction, thereby changing the beam angle of the heating source.

[0012] The synchronous structure is installed between the lamp cover and the transmission structure; when the height of the lamp cover changes, the synchronous structure changes the height of the wafer carrier in the same direction proportionally through the transmission structure.

[0013] As a further embodiment of the present invention, the lampshade includes a fixing member fixed to the furnace body, a movable member slidably disposed on the fixing member, a movable ring fixed to the fixing member slidably disposed inside the movable member, the space enclosed by the movable ring and the movable member is a cavity two, the cavity one is enclosed by the movable ring, the movable member and the fixing member, and a horn cover is fixedly disposed at the bottom of the movable member.

[0014] As a further aspect of the present invention, the synchronization structure includes:

[0015] Lever 1 is rotatably mounted on the lower surface of the top of the furnace body, and is connected to the movable part via a sliding groove; as the height of the lampshade changes, lever 1 rotates around the hinge point with the furnace body, and the height of the outer end changes proportionally.

[0016] The vertical rod is vertically slidably mounted on the side wall of the furnace body, and its top is connected to the lever via a sliding groove;

[0017] Lever 2 is rotatably mounted on the upper surface of the bottom of the furnace body, and its outer end is connected to the vertical rod through a sliding groove. The inner end of lever 2 can drive the movable support to rise and fall through the drive structure and transmission structure. When the height of the vertical rod changes, the hinge point between lever 2 and the furnace body rotates, and the height of the inner end changes proportionally.

[0018] As a further aspect of the present invention, the transmission structure includes:

[0019] A transmission gear ring is coaxially fixed with the irradiation element and has a transmission gear that rotates around the axis of the irradiation element meshing on its inner side. A boss is axially slidable on the top of the transmission gear via a key. A return spring is provided between the boss and the transmission gear. The boss is assembled with a wafer carrier via a key.

[0020] A drive shaft is rotatably mounted coaxially with the irradiated element. The drive shaft drives the boss to rotate via a connector. A drive groove is provided on the bottom side wall of the drive shaft. The drive structure can press down on the boss and drive it to rotate through the drive groove.

[0021] As a further embodiment of the present invention, the driving structure includes: a driving motor installed at the bottom of the furnace body, a driving shaft slidably connected to the output shaft of the driving motor via a key, a rotating ring rotatably provided on the side wall of the driving shaft, the rotating ring being connected to a lever two via a sliding shaft, a transmission component fixedly provided at the top of the driving shaft, and the transmission component pressing down and driving the transmission shaft to rotate via a transmission groove.

[0022] As a further embodiment of the present invention, a cover plate is rotatably provided on the top of the irradiation element, the cover plate is connected to the drive shaft by a connector, the cover plate is eccentrically provided with a positioning groove that matches the wafer carrier, the side wall of the positioning groove is connected to a clamping cavity, and a clamping element is slidably provided in the clamping cavity.

[0023] As a further embodiment of the present invention, the quartz bracket is fixedly provided with a limiting member for limiting the movable bracket, and a U-shaped snap-fit ​​member is snapped into the limiting member, and the snap-fit ​​member is fixedly provided with the movable bracket.

[0024] As a further embodiment of the present invention, a sliding rheostat is installed between the vertical rod and the furnace body. The sliding rheostat slider and the resistance column are fixed to the vertical rod and the furnace body respectively. The sliding rheostat is electrically connected to the drive motor and is used to adjust the input current of the drive motor and change the speed of the drive motor.

[0025] Compared with the prior art, the present invention has the following beneficial effects:

[0026] In this invention, the driving structure drives the wafer carrier to rotate simultaneously around the axis of the irradiation element via a transmission structure. The wafer on the wafer carrier rotates slowly, allowing each part of the wafer to pass through the center of the irradiation area in sequence, ensuring uniform heating between the center and the periphery of the wafer and preventing wafer cracking and damage due to stress concentration. Simultaneously, the wafer also rotates around the axis of the irradiation element, allowing it to contact each part of the irradiation area sequentially, preventing uneven heating of the wafer due to uneven distribution of irradiation light from the heating source, and further preventing wafer cracking and damage due to stress concentration.

[0027] In this invention, as the power of the heating source increases, the temperature around the heating source also increases. The gas inside the cavity expands due to heat, causing the lampshade to rise. The lampshade, through a synchronous structure, drives the wafer carrier to rise proportionally, shortening the distance between the wafer and the heating source, reducing heat loss, improving wafer heating efficiency, and shortening wafer heating time. The rising of the lampshade also increases the beam angle of the heating source, ensuring that the irradiated area on the irradiation device always overlaps with it. This prevents the irradiated area from failing to cover the irradiation device, which could cause some wafers to be outside the irradiated area for a short time, resulting in excessive temperature differences on the wafer and causing it to crack and break. Attached Figure Description

[0028] To more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0029] Figure 1 This is a schematic diagram of the overall structure of the present invention;

[0030] Figure 2 This is a schematic diagram of the overall internal structure of the present invention;

[0031] Figure 3 This is a schematic diagram of the annealing furnace door in the closed state of the present invention;

[0032] Figure 4 This is a schematic diagram of the annealing furnace door in the open state of the present invention;

[0033] Figure 5 This is a schematic diagram of the structure of the annealing furnace door in the open state of the present invention;

[0034] Figure 6 This is a schematic cross-sectional view of the annealing furnace door in the closed state of the present invention;

[0035] Figure 7 For the present invention Figure 6 Enlarged structural diagram at point A in the middle;

[0036] Figure 8 This is a schematic diagram of the movement trajectory of the wafer carrier disk in this invention;

[0037] Figure 9 This is a schematic diagram of the movement trajectory of the wafer carrier disk in this invention;

[0038] Figure 10 This is a schematic diagram of the synchronization structure and its connection relationship of the present invention;

[0039] Figure 11 This is a schematic diagram of the cross-sectional structure of the irradiated part of the present invention;

[0040] Figure 12 For the present invention Figure 11 Enlarged structural diagram at point B;

[0041] Figure 13 For the present invention Figure 11 Enlarged structural diagram at point C;

[0042] Figure 14 This is a schematic diagram of the vertical rod and its connection structure according to the present invention;

[0043] Figure 15 This is a schematic diagram of the connection relationship between the drive shaft and the transmission shaft of the present invention;

[0044] Attached Figures: 1. Frame; 11. Crystal Boat Platform; 12. Robotic Arm; 13. Cooling Station; 14. Wafer Carrier; 15. Lifting Mechanism; 16. Sliding Rheostat; 2. Annealing Furnace; 21. Furnace Body; 22. Furnace Door; 23. Opening / Closing Electric Cylinder; 24. Quartz Support; 25. Movable Support; 4. Heating Source; 41. Lampshade; 42. Cavity One; 43. Movable Components; 44. Movable Ring; 45. Cavity Two; 46. Fixing Components; 47. Horn Cover; 5. Synchronization Structure; 51. Lever 1; 52. Vertical rod; 53. Lever 2; 6. Transmission structure; 61. Transmission gear ring; 62. Transmission gear; 63. Boss; 64. Return spring; 65. Transmission shaft; 66. Transmission groove; 7. Drive structure; 71. Drive motor; 72. Drive shaft; 73. Rotary ring; 74. Sliding shaft; 75. Transmission component; 8. Irradiation component; 81. Cover plate; 82. Positioning groove; 83. Clamping cavity; 84. Clamping component; 91. Limiting component; 92. Snap-fit ​​component. Detailed Implementation

[0045] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0046] Please see Figures 1-15 The present invention provides a technical solution: a single-cavity fully automatic rapid annealing device, comprising a frame 1, wherein a crystal boat platform 11, a robotic arm 12, a cooling station 13, an annealing furnace 2, a wafer carrier 14, and a lifting mechanism 15 are installed within the frame 1.

[0047] See Figure 1-4 Crystal Boat Platform 11: Crystal Boat Platform 11 is a device for placing crystal boat boxes. The crystal boat boxes are manually placed on Crystal Boat Platform 11. Crystal Boat Platform 11 is equipped with material box detection and wafer bump detection.

[0048] The robotic arm 12 is mainly used as a component for transporting wafers;

[0049] After each wafer is removed from the wafer carrier, its center position will be slightly off. Before placing each wafer into annealing furnace 2, it needs to be placed on a wafer calibrator for centering and calibration. This ensures that each wafer is placed in the same position in annealing furnace 2.

[0050] Because the temperature inside the annealing furnace 2 is generally quite high after the wafer is annealed at high temperature, a robotic arm 12 is needed to pick up the annealed wafer and place it onto the cooling station 13 for cooling.

[0051] All valves in the vacuum system are programmed and interlocked. When power is off, the valves automatically close to protect the pressure inside the furnace.

[0052] Annealing furnace 2 has an internal water-cooling structure. Annealing furnace 2 is made of aluminum alloy. The inner wall of annealing furnace 2 is gold-plated; during rapid annealing, the gold plating reflects light and heat, preventing temperature loss within the furnace.

[0053] The wafer carrier disk 14 is made of silicon carbide, which has excellent thermal conductivity and high temperature resistance, and can improve the temperature uniformity during the wafer heat treatment process.

[0054] The power regulator mainly adjusts the power of the heating source 4. By changing the power of the heating source 4, the brightness of the light emitted by the heating source 4 is changed, thereby changing the radiant heat on the wafer.

[0055] The cooling water circuit has one inlet and one outlet. A ball valve controls the flow of the cooling water to protect against leaks in the internal piping. The circuit is also equipped with a flow switch; an alarm will sound if the water flow is insufficient. The cooling water is distributed to each area of ​​the machine requiring cooling via a distribution manifold.

[0056] The lifting mechanism 15 supports the wafer carrier 14 on the quartz support 24 of the furnace door 22. During the wafer loading and unloading process, the lifting mechanism 15 below lifts the wafer. The robotic arm 12 can then perform the loading and unloading operations.

[0057] Thermocouples are used to detect the real-time temperature of a product;

[0058] During operation, the wafer is manually placed on the wafer platform 11. The robotic arm 12 removes the wafer from the wafer box and transfers it to the wafer calibrator for alignment and positioning. After positioning, the wafer is transferred to the quartz holder 24 by the robotic arm 12. The furnace door 22 is closed, and the heat treatment process begins. After the process is completed, the robotic arm 12 transfers the wafer back to the cooling station 13 for cooling. After cooling, the robotic arm 12 transfers the wafer back to the wafer box.

[0059] The annealing furnace 2 includes:

[0060] The furnace body 21 is installed inside the frame 1 and has a furnace door 22 at its end. A drive structure 7 is installed at the bottom of the furnace body 21, and an opening and closing electric cylinder 23 is installed between the furnace door 22 and the furnace body 21.

[0061] A quartz support 24 is installed inside the furnace door 22, and a movable support 25 is attached to the top via a snap-fit ​​mechanism. Quartz material has good light transmission, is resistant to high temperatures, and does not easily absorb heat. It mainly serves as a support for the wafer carrier 14; the product is placed on the quartz support 24 and is transferred into the furnace body 21 during the closing of the furnace door 22.

[0062] The irradiation element 8 is mounted on the top of the movable support 25, and the wafer carrier 14 is eccentrically disposed on the top of the irradiation element 8;

[0063] The transmission structure 6 is installed in the movable bracket 25 and can be axially slidably connected to the drive structure 7, for driving the wafer carrier disk 14 to rotate and rotate around the axis of the irradiation element 8.

[0064] Heating source 4 is installed on the top of furnace body 21;

[0065] The lampshade 41 is installed on the top of the furnace body 21 and is located outside the heating source 4. A cavity 42 is provided inside the lampshade 41. The gas in the cavity 42 adjusts the height of the lampshade 41 by thermal expansion and contraction, thereby changing the beam angle of the heating source 4.

[0066] Synchronization structure 5 is installed between lamp cover 41 and transmission structure 6; when the height of lamp cover 41 changes, synchronization structure 5 changes the height of wafer carrier disk 14 in the same direction proportionally through transmission structure 6.

[0067] For details, see Figure 5-9 The furnace door 22 is closed to seal the furnace body 21. The vacuum pump is connected to the vacuum pipe to evacuate the furnace body 21. After the furnace body 21 is relatively vacuumed, the heating source 4 is powered on and the input power of the heating source 4 is adjusted by the power regulator so that the output power of the heating source 4 first rises at a constant speed. When the temperature of the wafer detected by the thermocouple reaches 1200°C, the power of the heating source 4 then decreases at a constant speed. The furnace body 21 is then cooled by the cooling water circuit. After the cooling is completed, the vacuum pipe is opened to connect the furnace body 21 with the outside. The furnace door 22 is opened by the opening and closing electric cylinder 23. The quartz support 24 and the wafer carrier 14 that carries the wafer are pulled out from the furnace body 21. The lifting mechanism 15 lifts the movable support 25 and the wafer. The robotic arm 12 takes out the wafer and places it in the cooling station 13 for cooling. After the wafer is cooled, it is placed back into the crystal boat box.

[0068] After the furnace door 22 is closed, the heating source 4 irradiates the irradiation element 8 (the irradiation area of ​​the heating source 4 coincides with that of the irradiation element 8, providing localized heating, which can reduce the wear and tear on the components inside the furnace body 21, and simultaneously ensure the uniformity of heating and shorten the cooling time). The transmission structure 6 is connected to the drive structure 7, and the drive structure 7 drives the wafer carrier disk 14 to rotate through the transmission structure 6, while simultaneously rotating around the axis of the irradiation element 8 (i.e., around O1). See [link to relevant documentation]. Figure 8The wafer on the wafer carrier 14 rotates slowly, allowing each part of the wafer to pass through the high-heat zone in the center of the irradiation area in sequence. This ensures that the center and the surrounding area of ​​the wafer are heated evenly, preventing the wafer from cracking and being damaged due to stress concentration. At the same time, the wafer also rotates around the axis of the irradiation element 8, allowing the wafer to come into contact with each part of the irradiation area in sequence. This prevents uneven heating of the wafer due to uneven distribution of the irradiation light from the heating source 4, further preventing the wafer from cracking and being damaged due to stress concentration.

[0069] See Figure 9 As the power of the heating source 4 increases, the temperature around the heating source 4 also increases. The gas inside the cavity 42 expands due to heat, causing the lamp cover 41 to rise. The lamp cover 41 drives the wafer carrier disk 14 to rise proportionally through the synchronization structure 5, shortening the distance between the wafer and the heating source 4, reducing heat loss, improving the heating efficiency of the wafer, and shortening the heating time of the wafer. The rise of the lamp cover 41 also increases the beam angle of the heating source 4, ensuring that the irradiated area on the irradiator 8 always overlaps with it. This prevents the irradiated area from failing to cover the irradiator 8, which would cause some wafers to be outside the irradiated area for a short time, resulting in excessive temperature difference in the wafer and causing the wafer to crack and be damaged.

[0070] As a further embodiment of the present invention, the lampshade 41 includes a fixing member 46 fixed to the furnace body 21, a movable member 43 slidably disposed on the fixing member 46, a movable ring 44 fixed to the fixing member 46 slidably disposed inside the movable member 43, and the space enclosed by the movable ring 44 and the movable member 43 is a cavity 2 45 (the cavity 2 45 is connected to the outside and is not marked in the figure), the cavity 1 42 is enclosed by the movable ring 44, the movable member 43 and the fixing member 46, and a horn cover 47 is fixedly disposed at the bottom of the movable member 43;

[0071] For details, see Figure 6 and Figure 7 When the power of heating source 4 increases, the gas in both cavity 1 (42) and cavity 2 (45) expands. The gas in cavity 2 (45) is discharged to the outside, while the gas in cavity 1 (42) cannot be discharged. The gas in cavity 1 (42) expands and pushes the movable part 43 to rise, which can drive the irradiation element 8 to rise and fall through the drive structure 7 and the transmission structure 6. It can also increase the beam angle of heating source 4. Conversely, when the power of heating source 4 decreases, the irradiation element 8 falls, and the beam angle of heating source 4 decreases. This allows the beam angle of heating source 4 to be adjusted in real time according to the output power of heating source 4, and the light emitted by heating source 4 can be aligned with the movable irradiation element 8 in real time, improving the uniformity and accuracy of temperature control.

[0072] As a further aspect of the present invention, the synchronization structure 5 includes:

[0073] Lever 51 is rotatably mounted on the lower top surface of the furnace body 21. Lever 51 is connected to the movable part 43 via a sliding groove. When the height of the lampshade 41 changes, lever 51 rotates around the hinge point with the furnace body 21, and the height of the outer end changes proportionally.

[0074] The vertical rod 52 is vertically slidably mounted on the side wall of the furnace body 21, and its top is connected to the lever 51 via a sliding groove;

[0075] Lever 2 53 is rotatably mounted on the upper surface of the bottom of the furnace body 21, and its outer end is connected to the vertical rod 52 through a sliding groove. The inner end of lever 2 53 can drive the movable support 25 to rise and fall through the drive structure 7 and the transmission structure 6. When the height of the vertical rod 52 changes, the hinge point between lever 2 53 and the furnace body 21 rotates, and the height of the inner end changes proportionally.

[0076] For details, see Figure 10 When the movable part 43 rises, the inner end of lever 51 rises accordingly. Lever 51 rotates around the hinge point with the furnace body 21, and the outer end of lever 51 descends. As can be seen from the figure, the hinge point of lever 51 with the furnace body 21 is close to the movable part 43. Therefore, the moving distance of the outer end of lever 51 is proportionally increased compared with the inner end.

[0077] The outer end of lever 1 51 drives the vertical rod 52 to descend, the vertical rod 52 presses down the outer end of lever 2 53 to descend, lever 2 53 rotates around the hinge point with the furnace body 21, and the inner end of lever 2 53 rises. As can be seen from the figure, the hinge point of lever 2 53 with the furnace body 21 is close to the vertical rod 52. Therefore, the moving distance of the inner end of lever 2 53 is proportionally increased compared with the outer end.

[0078] The inner end of lever 2 53 drives the movable support 25 to rise through the drive structure 7 and the transmission structure 6, so that the wafer can rise synchronously with the movable part 43. The distance of the movable part 43 rising is increased proportionally twice through lever 1 51 and lever 2 53, so that the distance of the movable support 25 and the movable part 43 rising proportionally increases. This ensures that the wafer rises further, improves the wafer heating speed, and matches the irradiation area, avoiding the irradiation area being too large or too small, which could cause heat loss or uneven heating.

[0079] As a further aspect of the present invention, the transmission structure 6 includes:

[0080] A transmission gear ring 61 is coaxially fixed with the irradiation element 8 and has a transmission gear 62 that rotates around the axis of the irradiation element 8 meshing on its inner side. A boss 63 is axially slidably provided on the top of the transmission gear 62 via a key. A return spring 64 is provided between the boss 63 and the transmission gear 62. The boss 63 is assembled with the wafer carrier disk 14 via a key.

[0081] The drive shaft 65 is coaxially rotatably arranged with the irradiation element 8. The drive shaft 65 drives the boss 63 to rotate through the connecting piece. The bottom side wall of the drive shaft 65 is provided with a drive groove 66. The drive structure 7 can press down on the boss 63 through the drive groove 66 and drive it to rotate.

[0082] For details, see Figure 10-13 The drive structure 7 drives the drive shaft 65 to rotate, and the drive shaft 65 drives the boss 63 to rotate around the axis of the irradiation element 8. The boss 63 drives the drive gear 62 and the wafer carrier 14 to rotate around the axis of the irradiation element 8, so that the wafer can contact each position of the irradiation area in turn. At the same time, the drive gear 62 rotates under the action of the drive gear ring 61, which makes the wafer carrier 14 rotate, so that each part of the wafer passes through the center of the irradiation area in turn, ensuring that the center of the wafer and the surrounding area are heated evenly.

[0083] When the furnace door 22 is closed, the drive structure 7 presses down the boss 63 through the transmission groove 66, causing the wafer carrier 14 to descend into the irradiation element 8, lowering the wafer's center of gravity and reducing the wafer's stability.

[0084] After the furnace door 22 is opened, the drive structure 7 disengages from the transmission groove 66, and the reset spring 64 fixes the boss 63 out, fixing the wafer irradiation part 8 in place, making it convenient for the robotic arm 12 to grasp it.

[0085] As a further embodiment of the present invention, the drive structure 7 includes: a drive motor 71 installed at the bottom of the furnace body 21, a drive shaft 72 slidably connected to the output shaft of the drive motor 71 via a key, a rotating ring 73 rotatably provided on the side wall of the drive shaft 72, the rotating ring 73 being connected to a lever 53 via a sliding shaft 74, and a transmission component 75 fixedly provided at the top of the drive shaft 72, the transmission component 75 being pressed down through a transmission groove 66 and driving the transmission shaft 65 to rotate;

[0086] For details, see Figure 10-13 The drive motor 71 drives the drive shaft 72 to rotate through the output shaft, the drive shaft 72 drives the transmission component 75 to rotate, and the transmission component 75 presses down on the transmission shaft 65 through the key on the inner side wall and drives the transmission shaft 65 to rotate, thereby reducing the wafer height and driving the wafer to rotate.

[0087] When the furnace door 22 is closed, the transmission shaft 65 and the drive shaft 72 are coaxial. When the furnace body 21 is evacuated, the pressure inside the furnace body 21 decreases, the moving part 43 rises, and the inner end of the lever 53 rises proportionally. The lever 53 drives the rotating ring 73 to rise through the sliding shaft 74. The rotating ring 73 drives the drive shaft 72 to rise along the output shaft of the drive motor 71. At the same time, the drive shaft 72 moves closer to the transmission shaft 65, so that the transmission part 75 and the transmission groove 66 partially overlap. When the drive shaft 72 rotates, the drive shaft 72 can drive the transmission shaft 65 to rotate and descend through the transmission part 75 and the transmission groove 66, thereby realizing the rotation and descent of the wafer. The vacuuming is used to complete the partial overlap of the transmission shaft 65 and the transmission part 75, reducing the assembly difficulty between the two.

[0088] As a further embodiment of the present invention, a cover plate 81 is rotatably provided on the top of the irradiation element 8. The cover plate 81 is connected to the drive shaft 65 by a connector. The cover plate 81 is eccentrically provided with a positioning groove 82 that matches the wafer carrier 14. The side wall of the positioning groove 82 is connected to a clamping cavity 83. A clamping element 84 is slidably provided in the clamping cavity 83.

[0089] Specifically, the drive shaft 65 can drive the cover plate 81 to rotate around the axis of the irradiator 8 through the connector. The cover plate 81 supports the wafer carrier 14 and can ensure the stability of the rotation of the wafer carrier 14.

[0090] The diameter of the positioning groove 82 is larger than that of the wafer carrier 14, which facilitates the descent of the wafer carrier 14 and avoids obstruction of the wafer carrier 14 falling into the positioning groove 82, thus preventing the wafer carrier 14 from detaching from the boss 63 and affecting the rotation of the wafer carrier 14.

[0091] As the temperature rises, the gas in the space enclosed by the clamping cavity 83 and the outer end face of the clamping member 84 expands due to heat, causing the clamping member 84 to move closer to the wafer carrier 14, shortening the gap between the wafer carrier 14 and the positioning groove 82, which can further improve the stability of the wafer carrier 14 during rotation. It should be noted that the clamping member 84 does not contact the wafer carrier 14 to avoid affecting the rotation of the wafer carrier 14.

[0092] As a further embodiment of the present invention, the quartz bracket 24 is fixedly provided with a limiting member 91 for limiting the movable bracket 25, and a U-shaped snap-fit ​​member 92 is snapped into the limiting member 91, and the snap-fit ​​member 92 is fixedly provided with the movable bracket 25.

[0093] Specifically, the quartz holder 24 can be quickly snapped onto or separated from the movable holder 25 via the snap-fit ​​92, making it convenient for the robotic arm 12 to pick up the wafer.

[0094] As a further embodiment of the present invention, a sliding rheostat 16 is installed between the vertical rod 52 and the furnace body 21. The sliding rheostat 16 has its slider and resistance column fixed to the vertical rod 52 and the furnace body 21 respectively. The sliding rheostat 16 is electrically connected to the drive motor 71 and is used to adjust the input current of the drive motor 71 and change the speed of the drive motor 71.

[0095] Specifically, when the vertical rod 52 descends, the slider of the sliding rheostat 16 and the resistance column generate relative displacement, changing the input current of the drive motor 71 electrically connected to it, thereby controlling the rotation of the drive motor 71. That is, the smaller the distance between the wafer and the heating source 4, the greater the relative displacement between the slider of the sliding rheostat 16 and the resistance column, the faster the speed of the drive motor 71, and the faster the wafer rotates, thus avoiding damage to the wafer due to excessive temperature difference.

Claims

1. A single-cavity fully automatic rapid annealing device, comprising a frame (1), wherein a crystal boat platform (11), a robotic arm (12), a cooling station (13), an annealing furnace (2), a wafer carrier (14), and a lifting mechanism (15) are installed within the frame (1), characterized in that: The annealing furnace (2) includes: The furnace body (21) is installed inside the frame (1) and has a furnace door (22) at the end. A drive structure (7) is installed at the bottom of the furnace body (21), and an opening and closing electric cylinder (23) is installed between the furnace door (22) and the furnace body (21). Quartz bracket (24) is installed inside the furnace door (22), and a movable bracket (25) is installed on the top by a buckle. An irradiation element (8) is mounted on top of a movable support (25), and the wafer carrier disk (14) is eccentrically positioned on top of the irradiation element (8); The transmission structure (6) is installed in the movable bracket (25) and can be axially slidably connected to the drive structure (7) for driving the wafer carrier disk (14) to rotate and rotate around the axis of the irradiation element (8); The heating source (4) is installed on the top of the furnace body (21); The lampshade (41) is installed on the top of the furnace body (21) and is located outside the heating source (4). A cavity (42) is provided inside the lampshade (41). The gas in the cavity (42) adjusts the height of the lampshade (41) by thermal expansion and contraction, thereby changing the beam angle of the heating source (4). Synchronous structure (5) is installed between lamp cover (41) and transmission structure (6); when the height of lamp cover (41) changes, synchronous structure (5) changes the height of wafer carrier disk (14) in the same direction proportionally through transmission structure (6).

2. The single-cavity fully automatic rapid annealing equipment according to claim 1, characterized in that: The lampshade (41) includes a fixing member (46) fixed to the furnace body (21). The fixing member (46) has a movable member (43) slidably disposed therein. A movable ring (44) fixed to the fixing member (46) is slidably disposed inside the movable member (43). The space enclosed by the movable ring (44) and the movable member (43) is a cavity two (45). The cavity one (42) is enclosed by the movable ring (44), the movable member (43) and the fixing member (46). A horn cover (47) is fixedly disposed at the bottom of the movable member (43).

3. The single-cavity fully automatic rapid annealing equipment according to claim 2, characterized in that: The synchronization structure (5) includes: Lever 1 (51) is rotatably mounted on the lower surface of the top of the furnace body (21). Lever 1 (51) is connected to the movable part (43) via a sliding groove. When the height of the lampshade (41) changes, lever 1 (51) rotates around the hinge point with the furnace body (21), and the height of the outer end changes proportionally. The vertical rod (52) is vertically slidably set on the side wall of the furnace body (21), and its top is connected to the lever (51) through a sliding groove; Lever 2 (53) is rotatably mounted on the upper surface of the bottom of the furnace body (21), and its outer end is connected to the vertical rod (52) through a sliding groove. The inner end of the lever 2 (53) can drive the movable support (25) to rise and fall through the drive structure (7) and the transmission structure (6). When the height of the vertical rod (52) changes, the hinge of the lever 2 (53) and the furnace body (21) rotates, and the height of the inner end changes proportionally.

4. The single-cavity fully automatic rapid annealing equipment according to claim 1, characterized in that: The transmission structure (6) includes: A transmission gear ring (61) is coaxially fixed with the irradiation element (8) and has a transmission gear (62) that rotates around the axis of the irradiation element (8) meshing on its inner side. A boss (63) is axially slidably provided on the top of the transmission gear (62) via a key. A return spring (64) is provided between the boss (63) and the transmission gear (62). The boss (63) is assembled with the wafer carrier (14) via a key. The drive shaft (65) is coaxially rotatably arranged with the irradiation element (8). The drive shaft (65) drives the boss (63) to rotate through the connector. The bottom side wall of the drive shaft (65) is provided with a drive groove (66). The drive structure (7) can press down on the boss (63) through the drive groove (66) and drive it to rotate.

5. The single-cavity fully automatic rapid annealing equipment according to claim 3, characterized in that: The drive structure (7) includes: a drive motor (71) installed at the bottom of the furnace body (21), the output shaft of the drive motor (71) is slidably connected to a drive shaft (72) via a key, a rotating ring (73) is rotatably provided on the side wall of the drive shaft (72), the rotating ring (73) is connected to a lever (53) via a sliding shaft (74), and a transmission component (75) is fixedly provided on the top of the drive shaft (72), the transmission component (75) is pressed down through a transmission groove (66) and drives the transmission shaft (65) to rotate.

6. The single-cavity fully automatic rapid annealing equipment according to claim 1, characterized in that: The top of the irradiation element (8) is rotatably provided with a cover plate (81). The cover plate (81) is connected to the drive shaft (65) by a connector. The cover plate (81) is eccentrically provided with a positioning groove (82) that matches the wafer carrier (14). The side wall of the positioning groove (82) is connected to a clamping cavity (83). A clamping element (84) is slidably provided in the clamping cavity (83).

7. The single-cavity fully automatic rapid annealing equipment according to claim 1, characterized in that: The quartz bracket (24) is fixedly provided with a limiting member (91) for limiting the movable bracket (25), and a U-shaped snap-fit ​​member (92) is snapped into the limiting member (91), and the snap-fit ​​member (92) is fixedly provided with the movable bracket (25).

8. A single-cavity fully automatic rapid annealing device according to claim 3, characterized in that: A sliding rheostat (16) is installed between the vertical rod (52) and the furnace body (21). The sliding rheostat (16) has its slider and resistance column fixed to the vertical rod (52) and the furnace body (21) respectively. The sliding rheostat (16) is electrically connected to the drive motor (71) and is used to adjust the input current of the drive motor (71) and change the speed of the drive motor (71).

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