Chip transfer and die bonding method

Abstract

The invention discloses a chip transfer and die bonding method. The method comprises the following steps: providing a transfer substrate of which the front side bears a plurality of chips; moving the transfer substrate so as to respectively place the plurality of chips on a circuit substrate; applying gas with preset pressure to the back surface of the transfer substrate, so that the plurality of chips are pressed by the gas through the transfer substrate to be in close contact with the circuit substrate; the plurality of chips are fixed on the circuit substrate; and removing the transfer substrate. Therefore, when a transfer substrate bearing a plurality of chips is sucked on the bottom end of the bearing body through air suction of the plurality of air suction openings, air with preset pressure can be guided into the second accommodating space of the bearing body through the air inlet opening; therefore, the gas with the preset pressure is averagely pressed on the back surface of the transfer substrate.

Description

Technical Field

[0001] The invention relates to a chip transfer and die bonding method using a chip transfer module. Background Art

[0002] In the prior art, the LED chip can be transferred from one carrier to another by a pick-up and placement action of a nozzle or a push-up action of a pin, and then the LED chip is mounted on a circuit substrate by an external heating method (such as a reflow furnace). Summary of the invention

[0003] The technical problem to be solved by the present invention is to provide a chip transfer and die bonding method in view of the deficiencies of the prior art.

[0004] In order to solve the above-mentioned technical problems, another technical solution adopted by the present invention is to provide a chip transfer and die bonding method, which includes: providing a transfer substrate carrying a plurality of chips on the front side; moving the transfer substrate to place the plurality of chips on the circuit substrate respectively; applying a gas with a predetermined pressure to the back side of the transfer substrate so that the plurality of chips are pressurized by the gas through the transfer substrate and are in close contact with the circuit substrate; fixing the plurality of chips on the circuit substrate; and removing the transfer substrate.

[0005] The beneficial effect of the present invention lies in that the chip transfer and solidification method provided by the present invention can be achieved through the technical scheme of "providing a transfer substrate carrying multiple chips on the front side", "moving the transfer substrate to place the multiple chips on the circuit substrate respectively", "applying gas with a predetermined pressure to the back side of the transfer substrate so that the multiple chips are pressurized by the gas through the transfer substrate and are in close contact with the circuit substrate", "fixing the multiple chips on the circuit substrate" and "removing the transfer substrate", so that when the transfer substrate carrying multiple chips is adsorbed on the bottom end of the carrier body through the exhaust of the multiple suction openings of the first gas guide structure and the second accommodating space is closed, the gas with a predetermined pressure can be introduced into the second accommodating space of the carrier body through the at least one air inlet opening of the second gas guide structure, so that the gas with a predetermined pressure is evenly pressed on the back side of the transfer substrate.

[0006] To further understand the features and technical contents of the present invention, please refer to the following detailed description and drawings of the present invention. However, the drawings provided are only for reference and description and are not intended to limit the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0007] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for describing the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other embodiments can be obtained based on these drawings without paying creative work.

[0008] Figure 1 A schematic diagram of a three-dimensional exploded view of a chip transfer module provided in a first embodiment of the present invention from a viewing angle.

[0009] Figure 2 A three-dimensional combined schematic diagram of a chip transfer module provided by the first embodiment of the present invention from a viewing angle.

[0010] Figure 3 It is a schematic exploded perspective view of the chip transfer module provided by the first embodiment of the present invention from another viewing angle.

[0011] Figure 4 A three-dimensional combination schematic diagram of another viewing angle of the chip transfer module provided by the first embodiment of the present invention.

[0012] Figure 5 The chip transfer module provided by the first embodiment of the present invention is Figure 4 Schematic cross-sectional view of the VV section line.

[0013] Figure 6 The chip transfer module provided by the first embodiment of the present invention is Figure 4 Schematic cross-sectional view of section line VI-VI.

[0014] Figure 7 A functional block diagram of a chip transfer module provided by a first embodiment of the present invention, wherein a plurality of first gas guiding channels are gas-connected to a gas extraction device.

[0015] Figure 8 A functional block diagram of a second gas guiding structure of a chip transfer module provided by the first embodiment of the present invention being gas-connected to a gas supply device.

[0016] Fig. 9 This is a flow chart of a chip transfer and die bonding method provided in a second embodiment of the present invention.

[0017] Fig.10 It is a schematic diagram of a chip transfer and die bonding device provided in a second embodiment of the present invention.

[0018] Fig.11 Schematic diagram of steps S102 , S104 and S106 of the chip transfer and die bonding method provided in the second embodiment of the present invention.

[0019] Fig.12 It is a schematic diagram of step S108 of the chip transfer and die bonding method provided in the second embodiment of the present invention.

[0020] Reference numerals

[0021] D Chip transfer and die bonding equipment

[0022] M1 Baseboard Carrying Module

[0023] M2 Chip Transfer Module

[0024] M3 Laser Generation Module

[0025] 1 Carrying body

[0026] 1000 Screw blind hole

[0027] 1001 First Storage Space

[0028] 1002 Second storage space

[0029] 2 Light-transmitting elements

[0030] 2000 Exposed Parts

[0031] 3. First gas guide structure

[0032] 30 nozzle

[0033] 3000 Inhalation opening

[0034] 3001 First gas guide channel

[0035] 4 Second gas guide structure

[0036] 4000 Air intake opening

[0037] 4001 Second gas guide channel

[0038] 5 Gas leakage prevention structure

[0039] 51 First gas leak-proof ring

[0040] 52 Second gas leak-proof ring

[0041] 6 Top pressure plate

[0042] 6000 Screw Through Hole

[0043] 6001 Through opening

[0044] T screw

[0045] P Circuit board

[0046] S Transfer Substrate

[0047] S1001 front

[0048] S1002 back

[0049] H Adhesive layer

[0050] C Chip

[0051] B Conductive soldering layer

[0052] D1 Vacuum Extractor

[0053] D2 air supply device DETAILED DESCRIPTION

[0054] The following is an explanation of the implementation methods of the "chip transfer module and chip transfer and solid crystal device and method" disclosed in the present invention through specific specific embodiments. Those skilled in the art can understand the advantages and effects of the present invention from the contents disclosed in this specification. The present invention can be implemented or applied through other different specific embodiments, and the details in this specification can also be modified and changed in various ways based on different viewpoints and applications without departing from the concept of the present invention. In addition, the drawings of the present invention are only simple schematic illustrations and are not depicted according to actual dimensions. It is stated in advance. The following implementation methods will further explain the relevant technical contents of the present invention in detail, but the disclosed contents are not intended to limit the scope of protection of the present invention. In addition, the term "or" used in this article may include any one or more combinations of the associated listed items depending on the actual situation.

[0055] First embodiment

[0056] See also Figures 1 to 8 As shown, the first embodiment of the present invention provides a chip transfer module M2 , which includes: a carrier body 1 , a light-transmitting element 2 , a first gas guiding structure 3 and a second gas guiding structure 4 .

[0057] First, combine Figure 1 , Figure 3 , Figure 5 and Figure 6 As shown, the carrier body 1 includes a first accommodating space 1001 and a second accommodating space 1002. For example, the first accommodating space 1001 and the second accommodating space 1002 can be formed on the top and bottom of the carrier body 1, respectively, and the first accommodating space 1001 and the second accommodating space 1002 can be separated by the light-transmitting element 2 and are not connected to each other. However, the present invention is not limited to the above examples.

[0058] Furthermore, combined Figure 2 , Figure 3 , Figure 5 and Figure 6As shown, the light-transmitting element 2 is disposed in the first accommodation space 1001 of the carrier body 1, and the light-transmitting element 2 has an exposed portion 2000 corresponding to the second accommodation space 1002 of the carrier body 1 (that is, the exposed portion 2000 of the light-transmitting element 2 is exposed relative to the second accommodation space 1002 of the carrier body 1, and is not shielded by the solid part of the carrier body 1). For example, the light-transmitting element 2 can be made of any light-transmitting material (such as quartz), and the light-transmitting element 2 can be an inorganic light-transmitting material, a polymer light-transmitting material, or a light-transmitting composite material. However, the present invention is not limited to the above examples.

[0059] In addition, combined Figure 2 , Figure 5 , Figure 6 and Figure 7 As shown, the first gas guiding structure 3 is disposed in the carrier body 1, and the first gas guiding structure 3 includes a plurality of suction openings 3000 protruding from the carrier body 1. For example, the first gas guiding structure 3 includes a plurality of suction nozzles 30 protruding from the bottom end portion of the carrier body 1, and the plurality of suction openings 3000 are respectively disposed on the plurality of suction nozzles 30. Furthermore, the first gas guiding structure 3 has a plurality of first gas guiding channels 3001 (such as Figure 5 ), and the plurality of first gas guiding channels 3001 can be gas-connected to the gas extraction device D1 (as shown in FIG. Figure 7 As shown in FIG. 1 , when the gas extraction device D1 extracts gas from the plurality of first gas guide channels 3001 , the plurality of suction nozzles 30 can be used to suck the transfer substrate. However, the present invention is not limited to the above-mentioned examples.

[0060] In addition, combined Figure 4 , Figure 6 and Figure 8 As shown, the second gas guiding structure 4 is disposed in the carrier body 1, and the second gas guiding structure 4 includes at least one gas inlet opening 4000 connected to the second accommodation space 1002 of the carrier body 1. For example, the second gas guiding structure 4 has at least one second gas guiding channel 4001 connected to the at least one gas inlet opening 4000, and the at least one second gas guiding channel 4001 can be connected to the gas supply device D2. Thereby, when the gas is input into the at least one second gas guiding channel 4001 through the gas supply device D2, the gas can be filled into the second accommodation space 1002 of the carrier body 1 through the at least one gas inlet opening 4000. However, the present invention is not limited to the above examples.

[0061] For example, combining Figure 1 , Figure 3 , Figure 5 and Figure 6As shown, the chip transfer module M2 of the first embodiment of the present invention further includes a gas leak-proof structure 5, and the gas leak-proof structure 5 includes a first gas leak-proof ring 51 disposed in the first accommodation space 1001 of the carrier body 1 and a second gas leak-proof ring 52 disposed on the bottom end of the carrier body 1. Furthermore, the first gas leak-proof ring 51 (such as an O-ring) is disposed between the carrier body 1 and the light-transmitting element 2 to prevent the gas located in the second accommodation space 1002 of the carrier body 1 from leaking into the first accommodation space 1001 of the carrier body 1. In addition, the second gas leak-proof ring 52 (such as an O-ring) partially protrudes from the bottom end of the carrier body 1. However, the present invention is not limited to the above-mentioned examples.

[0062] For example, combining Figure 1 , Figure 3 , Figure 5 and Figure 6 As shown, the chip transfer module M2 of the first embodiment of the present invention further includes at least one top pressure plate 6, and the top pressure plate 6 can be fixed in the first accommodation space 1001 of the carrier body 1 by a plurality of screws T, so as to press against the light-transmitting element 2 and apply a predetermined pressure to the light-transmitting element 2 (at this time, the first gas leak-stop ring 51 will be compressed by the light-transmitting element 2). More specifically, the carrier body 1 has a plurality of screw blind holes 1000 arranged in the first accommodation space 1001, the top pressure plate 6 has a plurality of screw through holes 6000 corresponding to the plurality of screw blind holes 1000, and each screw T can pass through the corresponding screw through hole 6000 and be connected to the carrier body 1 through the corresponding screw blind hole 1000, thereby fixing the top pressure plate 6 on the carrier body 1. In addition, the top pressing plate 6 has a through opening 6001 corresponding to the exposed portion 2000 of the light-transmitting element 2, so as to expose the exposed portion 2000 of the light-transmitting element 2 (that is, the exposed portion 2000 of the light-transmitting element 2 is exposed relative to the through opening 6001 of the top pressing plate 6, and is not shielded by the solid part of the top pressing plate 6). In addition, when the present invention uses a plurality of top pressing plates 6 that can cooperate with each other, the plurality of top pressing plates 6 can cooperate with each other to provide the through opening 6001 corresponding to the exposed portion 2000 of the light-transmitting element 2.

[0063] Second embodiment

[0064] See also Figures 9 to 12 As shown, the second embodiment of the present invention provides a chip transfer and die bonding device D and a chip transfer and die bonding method.

[0065] like Fig. 9As shown, a chip transfer and die bonding method provided by the second embodiment of the present invention includes: first, providing a transfer substrate S with a plurality of chips C on the front side S1001 (step S100); then, adsorbing and moving the transfer substrate S to place the plurality of chips C on the circuit substrate P respectively (step S102); then, applying a gas with a predetermined pressure to the back side S1002 of the transfer substrate S, so that the plurality of chips C are in close contact with the circuit substrate P through "the transfer substrate S is pressurized by the gas" (step S104); next, fixing the plurality of chips C on the circuit substrate P (step S106); then, removing the transfer substrate S (step S108). It is worth noting that before step S102, the plurality of conductive contacts of the plurality of chips C will respectively correspond to the plurality of conductive welding layers B (such as solder balls or solder paste) located on the circuit substrate P. In step S102, the step of "placing the plurality of chips C on the circuit substrate P respectively" belongs to the "first stage pressing of the plurality of chips C to the plurality of conductive welding layers B of the circuit substrate P". In step S104, the step of "applying a gas having a predetermined pressure to the back side of the transfer substrate S S1002" belongs to the "second stage pressing of the plurality of chips C to the plurality of conductive soldering layers B of the circuit substrate P". Thereby, the plurality of chips C can be in close contact with the plurality of conductive soldering layers B of the circuit substrate P (that is, the conductive contact of each chip C can be closely attached to the plurality of conductive soldering layers B of the circuit substrate P without gaps), thereby improving the electrical connection effect between the chip C and the circuit substrate P.

[0066] like Fig.10 As shown, a chip transfer and die bonding device D provided in the second embodiment of the present invention includes: a substrate carrying module M1, a chip transfer module M2 and a laser generating module M3. The substrate carrying module M1 can be used to carry a circuit substrate P, the chip transfer module M2 can be used to transfer a plurality of chips C to the circuit substrate P, and the laser generating module M3 can be used to fix the plurality of chips C on the circuit substrate P. In addition, the chip transfer module M2 includes a carrying body 1, a light-transmitting element 2, a first gas guiding structure 3 and a second gas guiding structure 4.

[0067] For example, combining Fig. 9 and Fig.10As shown, a plurality of chips C can be adhered to the adhesive layer H of the transfer substrate S, and the circuit substrate P can be carried by the substrate carrying module M1. In addition, the transfer substrate S carrying a plurality of chips C can be adsorbed by the first gas guiding structure 3 through the exhaust of the first gas guiding structure 3 of the chip transfer module M2. Further, through the exhaust of the plurality of suction openings 3000 of the first gas guiding structure 3, the transfer substrate S carrying a plurality of chips C can be adsorbed on the bottom end of the carrier body 1 and the second accommodating space 1002 is closed. It is worth noting that when the transfer substrate S carrying a plurality of chips C is adsorbed on the bottom end of the carrier body 1 and the second accommodating space 1002 is closed by the exhaust of the plurality of suction openings 3000 of the first gas guiding structure 3, the second gas leak-proof ring 52 is arranged between the carrier body 1 and the transfer substrate S, which can be used to prevent the gas in the second accommodating space 1002 of the carrier body 1 from leaking to the outside of the carrier body 1.

[0068] For example, combining Fig. 9 and Fig.11 As shown, in step S104, gas with a predetermined pressure can be introduced through the second gas guide structure 4 of the chip transfer module M2 and applied to the back side S1002 of the transfer substrate S. More specifically, when the transfer substrate S carrying a plurality of chips C is adsorbed on the bottom end of the carrier body 1 and the second accommodation space 1002 is closed by "exhausting gas from the plurality of suction openings 3000 of the first gas guide structure 3", gas with a predetermined pressure can be introduced into the second accommodation space 1002 of the carrier body 1 through "at least one gas inlet opening 4000 of the second gas guide structure 4", so that the gas with a predetermined pressure can be evenly pressed on the back side S1002 of the transfer substrate S, thereby enabling the plurality of chips C to be closely contacted with the circuit substrate P through "the transfer substrate S is evenly pressed by the gas" (that is, the conductive contact of each chip C can be closely abutted against the plurality of conductive welding layers B of the circuit substrate P without gaps), thereby improving the electrical connection effect between the chip C and the circuit substrate P (improving the product yield).

[0069] For example, combining Fig. 9 and Fig.11 As shown, in step S106, the plurality of chips C can be fixed on the circuit substrate P by irradiation of the laser generating module M3. More specifically, when the laser beam generated by the laser generating module M3 can sequentially pass through the light-transmitting element 2, the transfer substrate S (light-transmitting substrate) and the chip C and project onto the plurality of conductive soldering layers B between the chip C and the circuit substrate P, the plurality of conductive soldering layers B can be cured by irradiation of the laser beam generated by the laser generating module M3, thereby fixing the plurality of chips C on the circuit substrate P.

[0070] For example, combining Fig. 9 and Fig.12 As shown, in step S108, the transfer substrate S can be detached from the multiple chips C fixed on the circuit substrate P by the support of the chip transfer module M2. More specifically, after the multiple chips C are fixed on the circuit substrate P by the irradiation of the laser beam generated by the laser generating module M3, since the "binding force" provided by the multiple conductive welding layers B to the chips C (or the "binding force" between the multiple conductive welding layers B and the chips C) is greater than the "adhesion force" provided by the adhesive layer H of the transfer substrate S to the chips C (or the "adhesion force" between the adhesive layer H of the transfer substrate S and the chips C), the transfer substrate S can be detached from the multiple chips C fixed on the circuit substrate P by the support of the chip transfer module M2.

[0071] Advantageous Effects of Embodiments

[0072] One beneficial effect of the present invention is that the chip transfer and die bonding device D and the chip transfer module M2 provided by the present invention can be realized by "the carrier body 1 includes a first accommodating space 1001 and a second accommodating space 1002", "the light-transmitting element 2 is arranged in the first accommodating space 1001 of the carrier body 1", "the first gas guiding structure 3 is arranged in the carrier body 1, and the first gas guiding structure 3 includes a plurality of gas suction openings 3000 protruding from the carrier body 1" and "the second gas guiding structure 4 is arranged in the carrier body 1, and the second gas guiding structure 4 includes a gas connection The technical solution of "at least one air inlet opening 4000 in the second accommodating space 1002 of the carrier body 1" is adopted, so that when the transfer substrate S carrying a plurality of chips C is adsorbed on the bottom end of the carrier body 1 and the second accommodating space 1002 is closed through the gas suction of the plurality of air suction openings 3000 of the first gas guiding structure 3, the gas with a predetermined pressure can be introduced into the second accommodating space 1002 of the carrier body 1 through the at least one air inlet opening 4000 of the second gas guiding structure 4, so that the gas with a predetermined pressure is evenly pressed on the back side S1002 of the transfer substrate S. Therefore, the plurality of chips C can be closely contacted with the circuit substrate P through "the transfer substrate S is evenly pressurized by the gas", thereby improving the electrical connection effect between the chip C and the circuit substrate P.

[0073] Another beneficial effect of the present invention is that the chip transfer and solidification method provided by the present invention can be achieved through the technical scheme of "providing a transfer substrate S carrying multiple chips C on the front side S1001", "moving the transfer substrate S to place the multiple chips C on the circuit substrate P respectively", "applying gas with a predetermined pressure to the back side S1002 of the transfer substrate S so that the multiple chips C are pressurized by the gas through the transfer substrate S and are in close contact with the circuit substrate P", "fixing the multiple chips C on the circuit substrate P" and "removing the transfer substrate S", so that when the transfer substrate S carrying multiple chips C is adsorbed on the bottom end of the carrier body 1 and the second accommodating space 1002 is closed by the exhaust of the multiple suction openings 3000 of the first gas guiding structure 3, the gas with a predetermined pressure can be introduced into the second accommodating space 1002 of the carrier body 1 through at least one air inlet opening 4000 of the second gas guiding structure 4, so that the gas with a predetermined pressure is evenly pressed on the back side S1002 of the transfer substrate S. Therefore, the plurality of chips C can be brought into close contact with the circuit substrate P by “the transfer substrate S being uniformly pressurized by the gas”, thereby improving the electrical connection effect between the chips C and the circuit substrate P.

[0074] The contents disclosed above are only preferred feasible embodiments of the present invention, and are not intended to limit the scope of the claims of the present invention. Therefore, all equivalent technical changes made using the contents of the present invention description and drawings are included in the scope of the claims of the present invention.

Claims

1. A chip transfer and die bonding method, characterized in that: It includes: providing a transfer substrate having a plurality of chips on its front side; Moving the transfer substrate to place the plurality of chips on the circuit substrate respectively; Applying a gas with a predetermined pressure to the back side of the transfer substrate, so that the plurality of chips are pressed by the gas through the transfer substrate and are in close contact with the circuit substrate; Fixing a plurality of the chips on the circuit substrate; as well as The transfer substrate is removed.

2. The chip transfer and die bonding method according to claim 1, characterized in that: in, The transfer substrate carrying the plurality of chips is adsorbed by the exhaust of the first gas guide structure of the chip transfer module, and the gas with the predetermined pressure is introduced through the second gas guide structure of the chip transfer module and applied to the back side of the transfer substrate.

3. The chip transfer and die bonding method according to claim 2, characterized in that: in, The plurality of chips are fixed on the circuit substrate by being irradiated by the light source generated by the laser generating module, and the transfer substrate is detached from the plurality of chips fixed on the circuit substrate by being carried by the chip transfer module.

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