Anti-shake die bonding method

Abstract

The invention relates to the technical field of die bonding, and particularly discloses an anti-shake die bonding method, which comprises the following steps of: jacking up a wafer on a thin film, so that the wafer is separated from the thin film; fixing the wafer which is jacked up on a substrate; transversely moving the thin film so as to carry out jacking operation on the next wafer; wherein when the thin film is transversely moved, the thin film is continuously adsorbed downwards, so that the thin film is prevented from shaking. The anti-shake die bonding method provided by the invention can effectively solve the problems that the film shakes when the die bonding swing arm of the existing die bonding equipment swings, the positioning of the wafer on the film is not facilitated, and finally the poor die bonding is caused.

Description

Technical Field

[0001] The present invention relates to the technical field of die bonding, and in particular to an anti-shake die bonding method. Background Art

[0002] The incoming wafers are fixed on the film, which is then stretched tight on the wafer ring.

[0003] The crystal bonding equipment includes a crystal ring fixing mechanism for placing a crystal ring, a pin mechanism located below the crystal ring and lifting the wafer upward to separate from the film, and a crystal bonding swing arm for moving the lifted wafer to a substrate.

[0004] Existing ejector mechanisms include:

[0005] An ejector cap, wherein a plurality of ejector crystal adsorption holes are arranged on the top of the ejector cap;

[0006] The ejector body is located in the ejector cap and is slidably arranged up and down relative to the ejector cap.

[0007] When performing the die bonding operation, the steps are as follows:

[0008] ① The top crystal adsorption hole sucks the film downward to prevent the film from moving upward with the ejector pin during the subsequent top crystal process;

[0009] ② The ejector body moves upward, pierces the adsorbed film, and then lifts the wafer directly above the ejector body upward until it is separated from the film;

[0010] ③ The bonding arm takes away the lifted wafer and moves it to the substrate;

[0011] ④ After the ejector pin body retracts downward, the top crystal adsorption hole breaks the vacuum to release the film, and the crystal ring fixing mechanism moves the crystal ring, so that the next wafer moves to the top of the ejector pin body;

[0012] ⑤ The ejector body pushes up a wafer again. Synchronously, after the wafer is fixed, the wafer fixing arm returns to the wafer removal position and removes the lifted wafer.

[0013] In the above process, the efficiency of crystal bonding is very high. Therefore, the crystal bonding swing arm is almost constantly swinging back and forth, which is equivalent to constantly fanning the film, causing the film to shake up and down. The film shaking will affect the camera's visual positioning accuracy of the chip. Therefore, when the crystal ring fixing mechanism moves the crystal ring, the geometric center of the chip cannot be just above the ejector body. When the ejector body subsequently lifts the chip upward, it cannot directly push to the geometric center of the chip and is prone to deflection. After the chip is deflected, the crystal bonding swing arm is likely to damage the chip when taking the crystal, which eventually leads to poor crystal bonding.

[0014] Therefore, the existing die bonding method needs to be improved to solve the problem that the film will shake when the die bonding swing arm swings, which is not conducive to positioning the chip on the film and ultimately leads to poor die bonding.

[0015] The above information disclosed in this Background section is included only for enhancement of understanding of the background of the present disclosure and therefore it may contain information that does not form the prior art that is currently known to a person of ordinary skill in the art. Summary of the invention

[0016] One object of the present invention is to provide an anti-shake crystal bonding method, which can effectively solve the problem that the crystal bonding swing arm of the existing crystal bonding equipment will cause the film to shake when swinging, which is not conducive to positioning the chip on the film and ultimately leads to poor crystal bonding.

[0017] To achieve the above objectives, the present invention provides an anti-shake die bonding method, comprising:

[0018] Lifting the wafer on the film upwards so that the wafer is separated from the film;

[0019] Fixing the lifted wafer to a substrate;

[0020] The film is moved laterally so as to lift up the next wafer; wherein, when the film is moved laterally, the film is continuously sucked downward to limit the shaking of the film.

[0021] Optionally, the step of lifting the wafer on the film upwards so that the wafer is separated from the film comprises:

[0022] Adsorbing and fixing the film downward with a first suction force;

[0023] After the film is pierced upward, the corresponding wafer is pushed upward so that the wafer is separated from the film.

[0024] Optionally, when the film is moved laterally, the film is continuously adsorbed downward to limit the film from shaking, specifically:

[0025] When the film is moved laterally, the film is continuously sucked downward by a second suction force to limit the film from shaking;

[0026] Wherein, the first suction force is greater than the second suction force.

[0027] Optionally, the anti-shake die bonding method is performed by a die bonding device, and the die bonding device includes:

[0028] An ejector pin inner cap, wherein the top surface of the ejector pin inner cap is provided with a pinhole and a plurality of top crystal adsorption holes;

[0029] An ejector outer sleeve, the ejector outer sleeve is sleeved on the outside of the ejector inner cap and cooperates with the ejector inner cap to surround and form an anti-shake adsorption cavity with an opening facing upward;

[0030] The ejector body is located in the ejector inner cap and extends upward through the needle hole after being driven.

[0031] Optionally, the first suction force is N1, the second suction force is N2, the sum of the suction forces of the top crystal adsorption holes is N3, and the suction force at the upper opening of the anti-shake adsorption cavity is N4, wherein N2=N4.

[0032] Optional, N1=N3.

[0033] Optionally, the transverse movement of the film to lift the next wafer includes:

[0034] First switch the anti-shake adsorption chamber to the vacuum suction state, and then switch the top crystal adsorption hole to the vacuum breaking state.

[0035] Optional, N1=N3+N4.

[0036] Optionally, the transverse movement of the film to lift the next wafer includes:

[0037] The top crystal adsorption hole is switched to a vacuum breaking state and the vacuum suction state of the anti-shake adsorption chamber is maintained.

[0038] Optionally, the upper opening of the anti-shake adsorption cavity is in an annular structure, and the pinhole and each of the top crystal adsorption holes are located in the annular structure.

[0039] The beneficial effect of the present invention is that it provides an anti-shake crystal bonding method, which continuously adsorbs the film downward when the film is moved horizontally to limit the shaking of the film, thereby effectively solving the problem that the crystal bonding swing arm of the existing crystal bonding equipment will cause the film to shake when swinging, which is not conducive to positioning the chip on the film and ultimately leads to poor crystal bonding. BRIEF DESCRIPTION OF THE DRAWINGS

[0040] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative labor.

[0041] Figure 1 A schematic diagram of the structure of a die bonding device provided in an embodiment;

[0042] Figure 2A schematic diagram of the structure of the ejector mechanism provided in the embodiment;

[0043] Figure 3 A cross-sectional schematic diagram of a dual-zone ejector pin unit provided in an embodiment;

[0044] Figure 4 A cross-sectional schematic diagram of an ejector mechanism provided in an embodiment;

[0045] Figure 5 A flow chart of the anti-shake die bonding method provided in the embodiment.

[0046] In the figure:

[0047] 1. Crystal ring fixing mechanism;

[0048] 2. Ejector mechanism;

[0049] 201, dual-zone suction ejector pin unit; 2011, ejector inner cap; 2011a, pinhole; 2011b, ejector crystal suction hole; 2012, ejector outer sleeve; 2012a, anti-shake suction cavity; 2012b, annular structure; 2013, ejector body; 2014, ejector base; 2014a, ejector pin suction channel lower section; 2015, cap base; 2015a, ejector pin suction channel upper section; 2016, ejector reset spring; 2017, anti-shake suction air pipe joint; 2018, ejector crystal suction air pipe joint;

[0050] 202, vertical direct drive mechanism; 2021, cam; 2022, rotary drive mechanism;

[0051] 3. Crystal fixing swing arm. DETAILED DESCRIPTION

[0052] The reference to "embodiment" in the present invention means that the specific features, structures or characteristics described in conjunction with the embodiment may be included in at least one embodiment of the present invention. The word "embodiment" appearing in various places in the specification does not necessarily refer to the same embodiment, nor does it particularly limit its independence or association with other embodiments. In principle, in the present invention, as long as there is no technical contradiction or conflict, the various technical features mentioned in each embodiment can be combined in any way to form a corresponding implementable technical solution.

[0053] Unless otherwise defined, the technical terms used herein have the same meanings as those generally understood by those skilled in the art to which the present invention belongs; the use of relevant terms herein is only for describing specific embodiments and is not intended to limit the present invention.

[0054] In the description of the present invention, the term "and / or" is an expression used to describe the logical relationship between objects, indicating that three relationships may exist, for example, A and / or B, which means: A exists, B exists, and A and B exist at the same time. In addition, the character " / " in this article generally indicates that the objects before and after are in a logical relationship of "or".

[0055] In the present invention, terms such as "first" and "second" are merely used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship of quantity, priority or sequence between these entities or operations.

[0056] Without further restrictions, in the present invention, the words "include", "comprises", "has" or other similar expressions used in sentences are intended to cover non-exclusive inclusion. These expressions do not exclude the presence of additional elements in the process, method or product including the elements, so that the process, method or product including a series of elements may include not only those limited elements, but also other elements not explicitly listed, or also include elements inherent to such process, method or product.

[0057] Similar to the understanding in the Examination Guidelines, in the present invention, expressions such as "greater than", "less than", "exceed" and the like are understood to exclude the number itself; expressions such as "above", "below", "within" and the like are understood to include the number itself. In addition, in the description of the embodiments of the present invention, the meaning of "multiple" is more than two (including two), and similar expressions related to "multiple" are also understood in this way, such as "multiple groups", "multiple times", etc., unless otherwise clearly and specifically limited.

[0058] In the description of the embodiments of the present invention, the space-related expressions used, such as "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "vertical", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc., indicate the orientation or position relationship based on the orientation or position relationship shown in the specific embodiments or drawings, and are only for the convenience of describing the specific embodiments of the present invention or facilitating the reader's understanding, and do not indicate or imply that the referred device or component must have a specific position, a specific orientation, or be constructed or operated in a specific orientation, and therefore cannot be understood as a limitation on the embodiments of the present invention.

[0059] Unless otherwise expressly specified or limited, in the description of the embodiments of the present invention, the terms such as "install", "connect", "connect", "fix", "set" and the like used should be understood in a broad sense. For example, the "connection" can be a fixed connection, a detachable connection, or an integrated setting; it can be a mechanical connection, an electrical connection, or a communication connection; it can be a direct connection, or an indirect connection through an intermediate medium; it can be the internal connection of two elements or the interaction relationship between two elements. For those skilled in the art of the technical field to which the present invention belongs, the specific meanings of the above terms in the embodiments of the present invention can be understood according to the specific circumstances.

[0060] Example 1

[0061] The present embodiment provides a dual-zone suction ejector pin unit 201, an ejector pin mechanism 2 and a wafer bonding device, which are suitable for wafer bonding operation scenarios in semiconductor manufacturing. It can effectively solve the problem that the film will shake when the wafer bonding swing arm 3 of the existing wafer bonding device swings, which is not conducive to positioning the wafer on the film and ultimately leads to poor wafer bonding.

[0062] See also Figure 1 In this embodiment, the crystal bonding equipment includes a crystal ring fixing mechanism 1 for placing the crystal ring, a pin mechanism 2 located below the crystal ring and lifting the wafer upward to separate from the film, and a crystal bonding swing arm 3 for moving the lifted wafer to the substrate.

[0063] See also Figure 2 The ejector mechanism 2 includes a double-divided suction ejector unit 201 for adsorbing the film, and a vertical direct drive mechanism 202 for driving the double-divided suction ejector unit 201 to lift the wafer on the film upward.

[0064] See also Figure 3 The double-differentiation ejector pin unit 201 includes an ejector pin inner cap 2011 , an ejector pin outer sleeve 2012 , and an ejector pin body 2013 .

[0065] The top surface of the ejector pin inner cap 2011 is provided with a pinhole 2011a and a plurality of top crystal adsorption holes 2011b; the ejector pin outer sleeve 2012 is sleeved on the outside of the ejector pin inner cap 2011, and cooperates with the ejector pin inner cap 2011 to surround and form an anti-shake adsorption cavity 2012a with an opening facing upward; the ejector pin body 2013 is located in the ejector pin inner cap 2011, and is driven by the vertical direct drive mechanism 202 to extend upward through the pinhole 2011a, so as to pierce the film and lift the corresponding chip upward.

[0066] When the dual-zone ejector pin unit 201 provided in this embodiment needs to perform a die bonding operation, the die bonding process is as follows:

[0067] (1) The upper opening of the anti-shake adsorption cavity 2012a and the top crystal adsorption hole 2011b together suck the film downward to prevent the film from moving upward with the ejector pin during the subsequent top crystal process;

[0068] (2) The ejector pin body 2013 is driven to move upward, pierces the adsorbed film, and then lifts the wafer directly above the ejector pin body 2013 upward until it is separated from the film;

[0069] (3) The bonding arm 3 takes away the lifted wafer and moves it to the substrate;

[0070] (4) After the ejector body 2013 retracts downward, the top crystal adsorption hole 2011b breaks the vacuum to release the film, but the anti-shake adsorption cavity 2012a maintains the vacuum suction state to absorb the film;

[0071] (5) The crystal ring fixing mechanism 1 moves the crystal ring so that the next crystal moves to the top of the ejector pin body 2013;

[0072] (6) The ejector body 2013 lifts up another wafer, and synchronously, after the wafer is fixed, the wafer fixing arm 3 returns to the wafer removal position and removes the lifted wafer.

[0073] In the above process, when the crystal ring drives the film to move horizontally, the anti-shake adsorption chamber 2012a continuously adsorbs the film, suppressing the up and down shaking of the film, reducing the difficulty of the camera to visually locate the wafer, thereby improving the visual positioning accuracy, so that the crystal ring fixing mechanism 1 can move the geometric center of the wafer horizontally to just above the ejector body 2013. When the ejector body 2013 subsequently lifts the wafer upward, it can directly push to the geometric center of the wafer, and it is not easy to push off, thereby avoiding the wafer from being damaged due to the tilt of the wafer when the crystal bonding swing arm 3 takes the wafer, and finally reducing the poor bonding.

[0074] Therefore, the dual-zone ejector pin unit 201 provided by the present invention can effectively solve the problem that the film may shake when the crystal bonding swing arm 3 of the existing crystal bonding equipment swings, which is not conducive to positioning the wafer on the film and ultimately leads to poor crystal bonding.

[0075] In this embodiment, the upper opening of the anti-shake adsorption chamber 2012a is in the form of an annular structure 2012b, and the pinhole 2011a and each of the top crystal adsorption holes 2011b are located in the annular structure 2012b. Designing the upper opening of the anti-shake adsorption chamber 2012a as an annular structure 2012b surrounding the pinhole 2011a and each of the top crystal adsorption holes 2011b is beneficial for the anti-shake adsorption chamber 2012a to adsorb the film in a larger area under the limited top surface area of ​​the dual-zone suction pin unit 201, thereby further improving the anti-shake effect.

[0076] Optionally, the dual-differentiation ejector pin unit 201 further includes an ejector pin base 2014 , a cylinder cap base 2015 , and an ejector pin return spring 2016 .

[0077] The ejector body 2013 is slidably mounted on the ejector base 2014; the tube cap base 2015 is mounted on the ejector base 2014, the ejector outer sleeve 2012 and the ejector inner cap 2011 are both mounted on the upper end of the tube cap base 2015, and the tube cap base 2015 blocks the lower end opening of the anti-shake adsorption cavity 2012a. The ejector return spring 2016 is sleeved on the ejector body 2013 and located below the ejector base 2014, and is used to drive the ejector body 2013 to slide downward relative to the ejector inner cap 2011 to be flush with or below the pinhole 2011a.

[0078] Optionally, an upper section 215a of an ejector adsorption channel connected to each of the ejector crystal adsorption holes 2011b is provided between the ejector base 2014 and the ejector body 2013 and the tube cap base 2015.

[0079] The outer side of the ejector base 2014 is provided with an ejector adsorption channel lower section 2014a connected to the ejector adsorption channel upper section 2015a, and an ejector crystal adsorption air pipe joint 2018 connected to the ejector adsorption channel lower section 2014a;

[0080] The side wall of the ejector outer sleeve 2012 is connected to an anti-shake adsorption air pipe joint 2017 which is connected to the anti-shake adsorption chamber 2012a.

[0081] Furthermore, the ejector mechanism 2 also includes a top crystal adsorption vacuum pump and an anti-shake adsorption vacuum pump.

[0082] The suction port of the top crystal adsorption vacuum pump is connected to each top crystal adsorption hole 2011b of the ejector inner cap 2011 through the top crystal adsorption air pipe joint 2018; the suction port of the anti-shake adsorption vacuum pump is connected to the anti-shake adsorption chamber 2012a through the anti-shake adsorption air pipe joint 2017.

[0083] In this embodiment, the suction force of the upper opening of the anti-shake adsorption cavity 2012a is smaller than the suction force of each of the top crystal adsorption holes 2011b.

[0084] The main function of the top crystal adsorption hole 2011b is to fix the film and ensure that the film does not rise with the wafer when the ejector pin lifts the wafer. Therefore, the top crystal adsorption hole 2011b needs a strong suction force to firmly grasp the film.

[0085] The anti-shake adsorption chamber 2012a is mainly used for adsorbing thin films, but it is necessary to ensure that the thin films can move laterally when being adsorbed, so as to move the next wafer laterally to the top of the ejector pin body 2013. If the suction force of the anti-shake adsorption chamber 2012a is too strong, the thin films may be pulled due to the strong suction force of the anti-shake adsorption chamber 2012a when the wafer ring fixing mechanism 1 drives the wafer ring to move laterally, causing the wafer to shift or deflect, so that the wafer cannot be accurately lifted up, thereby affecting the quality of the solid crystal.

[0086] That is, the function of the anti-shake adsorption chamber 2012a is mainly to suppress the shaking of the film, rather than to fix the film. Therefore, it only needs sufficient suction to stabilize the film, and does not require excessive suction. Appropriate suction can balance the various forces in the crystal bonding process and ensure that the wafer can be lifted and moved smoothly.

[0087] Therefore, in order to prevent the top crystal adsorption hole 2011b from excessively pulling the film when the wafer ring moves horizontally, after the ejector pin body 2013 lifts the wafer, the top crystal adsorption hole 2011b needs to be vacuum-broken so that the top crystal adsorption hole 2011b releases the film.

[0088] Therefore, the suction force of the upper opening of the anti-shake adsorption cavity 2012a is smaller than the suction force of each top crystal adsorption hole 2011b, which can ensure the smooth progress of the crystal bonding process, improve the crystal bonding accuracy, and protect the film and the chip from damage.

[0089] See also Figure 4 Optionally, the vertical direct drive mechanism 202 includes a cam 2021 located below the ejector body 2013, and a rotary drive mechanism 2022 for driving the cam 2021 to rotate. When the rotary drive mechanism 2022 drives the cam 2021 to rotate, if the convex portion of the cam 2021 abuts against the ejector body 2013, the ejector body 2013 can be pushed up to eject the wafer upward; if the equal diameter portion of the cam 2021 abuts against the ejector body 2013, the ejector return spring 2016 can drive the ejector body 2013 to slide downward to be flush with or below the pinhole 2011a, so as to avoid scratching the film when the film moves laterally.

[0090] In summary, the die bonding equipment provided in this embodiment has the following advantages:

[0091] ① Improved die bonding accuracy: The design of the dual-differentiation ejector pin unit 201 effectively suppresses the shaking of the film during the die bonding process, reduces the difficulty of visual positioning of the wafer by the camera, improves the visual positioning accuracy, and thus improves the die bonding accuracy.

[0092] ② Reduced defective crystal bonding: The ejector pin body 2013 can directly push the geometric center of the wafer, avoiding damage to the wafer due to deflection and reducing the occurrence of defective crystal bonding.

[0093] ③ Avoid tearing the film: Through reasonable distribution of suction force, avoid excessive suction during the lateral movement of the film, which may cause damage to the film.

[0094] ④ Increase the anti-shake adsorption area: The upper end opening of the anti-shake adsorption cavity 2012a is designed to be a ring structure 2012b surrounding the pinhole 2011a and each of the top crystal adsorption holes 2011b, so that the anti-shake adsorption cavity 2012a can adsorb the film in a larger area, further improving the anti-shake effect.

[0095] Example 2

[0096] This embodiment provides an anti-shake die bonding method, which is performed by the die bonding equipment provided in Embodiment 1 and has the same functions and beneficial effects.

[0097] In this embodiment, the anti-shake die bonding method includes:

[0098] S10: lifting the wafer on the film upwards so that the wafer is separated from the film;

[0099] S20: fixing the lifted wafer onto a substrate;

[0100] S30: Transversely move the film so as to lift up the next wafer; wherein, when the film is transversely moved, the film is continuously sucked downward to limit the film from shaking.

[0101] The anti-shake crystal bonding method provided in this embodiment continuously adsorbs the film downward when the film is moved horizontally to limit the shaking of the film, thereby effectively solving the problem that the crystal bonding swing arm 3 of the existing crystal bonding equipment may cause the film to shake when it swings, which is not conducive to positioning the chip on the film and ultimately leads to poor crystal bonding.

[0102] In this embodiment, step S10 includes:

[0103] S101: fix the film downward by sucking it with a first suction force;

[0104] S102: After piercing the film upward, the corresponding wafer is lifted upward so that the wafer is separated from the film.

[0105] Accordingly, step S30 is specifically as follows:

[0106] When the film is moved laterally, the film is continuously sucked downward by a second suction force to limit the film from shaking;

[0107] Wherein, the first suction force is greater than the second suction force.

[0108] In this embodiment, the first suction force is N1, the second suction force is N2, the sum of the suction forces of the top crystal adsorption holes 2011b is N3, and the suction force at the upper opening of the anti-shake adsorption cavity 2012a is N4, wherein N2=N4.

[0109] As an optional implementation, N1=N3.

[0110] When N1=N3, it is equivalent to that during the entire crystal bonding process, the top crystal adsorption hole 2011b and the anti-shake adsorption chamber 2012a alternately enter the vacuum suction state. Specifically, when it is necessary to pierce the film and lift the wafer upward to detach from the film, it is necessary to first switch the top crystal adsorption hole 2011b to the vacuum suction state to fix the film, and switch the anti-shake adsorption chamber 2012a to the vacuum breaking state; and when it is necessary to move the film horizontally, it is necessary to first switch the anti-shake adsorption chamber 2012a to the vacuum suction state to achieve the film horizontal movement anti-shake, and then switch the top crystal adsorption hole 2011b to the vacuum breaking state to prevent the film from being torn.

[0111] It should be noted that if "the top crystal adsorption hole 2011b is first switched to the vacuum breaking state, and then the anti-shake adsorption chamber 2012a is switched to the vacuum suction state", then there is a time difference in which there is no suction to fix the film "after the top crystal adsorption hole 2011b is switched to the vacuum breaking state and before the anti-shake adsorption chamber 2012a is switched to the vacuum suction state", and the film will shake violently during this period due to the huge change in suction. In this embodiment, "the anti-shake adsorption chamber 2012a is first switched to the vacuum suction state to achieve lateral movement anti-shake of the film, and then the top crystal adsorption hole 2011b is switched to the vacuum breaking state to avoid tearing the film", which can avoid the occurrence of violent shaking of the film due to excessive suction changes.

[0112] As another optional implementation, N1=N3+N4.

[0113] When N1=N3+N4, it is equivalent to that during the entire crystal bonding process, the anti-shake adsorption chamber 2012a is always in a vacuum suction state, and only the top crystal adsorption hole 2011b will change between vacuum suction and vacuum breaking. Specifically, when it is necessary to pierce the film and lift the wafer upward to detach from the film, the top crystal adsorption hole 2011b needs to be switched to the vacuum suction state so as to firmly adsorb and fix the film downward; and when it is necessary to move the film horizontally, the top crystal adsorption hole 2011b needs to be switched to the vacuum breaking state to prevent the first suction force from being too large and tearing the film when the film moves horizontally.

[0114] It should be noted that the anti-shake adsorption chamber 2012a and the top crystal adsorption hole 2011b simultaneously adsorb and fix the film downward, which can reduce the suction force requirements of each of the top crystal adsorption holes 2011b, and further reduce the parameter requirements of the top crystal adsorption vacuum pump, thereby reducing the equipment cost;

[0115] Moreover, frequent switching between vacuum suction and vacuum breaking will reduce the service life of related valve components, so that the anti-shake adsorption chamber 2012a is always in a vacuum suction state, which can effectively reduce the number of actions of related valve components and thus extend the service life of the equipment.

[0116] Therefore, the anti-shake adsorption chamber 2012a is always in a vacuum suction state during the entire crystal bonding operation process, which can not only reduce the equipment cost but also extend the service life of the equipment.

[0117] On the basis of Example 1, for the features not explained in this example, the explanation in Example 1 is adopted and will not be repeated here.

[0118] Finally, it should be noted that although the above embodiments have been described in the specification and drawings of this application, this does not limit the scope of patent protection of this application. All technical solutions generated by replacing or modifying equivalent structures or equivalent processes based on the essential concept of this application using the contents recorded in the specification and drawings of this application, as well as directly or indirectly implementing the technical solutions of the above embodiments in other related technical fields, are included in the scope of patent protection of this application.

Claims

1. A method for anti-shake die bonding, characterized in that: include: Lifting the wafer on the film upwards so that the wafer is separated from the film; Fixing the lifted wafer to a substrate; The film is moved laterally so as to lift up the next wafer; wherein, when the film is moved laterally, the film is continuously sucked downward to limit the shaking of the film.

2. The anti-shake die bonding method according to claim 1, characterized in that: The step of lifting the wafer on the film upwards so that the wafer is separated from the film comprises: Adsorbing and fixing the film downward with a first suction force; After the film is pierced upward, the corresponding wafer is pushed upward so that the wafer is separated from the film.

3. The anti-shake die bonding method according to claim 2, characterized in that: When the film is moved laterally, the film is continuously adsorbed downward to limit the film from shaking, specifically: When the film is moved laterally, the film is continuously sucked downward by a second suction force to limit the film from shaking; Wherein, the first suction force is greater than the second suction force.

4. The anti-shake die bonding method according to claim 3, characterized in that: The anti-shake die bonding method is performed by a die bonding device, and the die bonding device includes: An ejector pin inner cap, wherein the top surface of the ejector pin inner cap is provided with a pinhole and a plurality of top crystal adsorption holes; An ejector outer sleeve, the ejector outer sleeve is sleeved on the outside of the ejector inner cap and cooperates with the ejector inner cap to surround and form an anti-shake adsorption cavity with an opening facing upward; The ejector body is located in the ejector inner cap and extends upward through the needle hole after being driven.

5. The anti-shake die bonding method according to claim 4, characterized in that: The first suction force is N1, the second suction force is N2, the sum of the suction forces of the top crystal adsorption holes is N3, and the suction force at the upper opening of the anti-shake adsorption cavity is N4, wherein N2=N4.

6. The anti-shake die bonding method according to claim 5, characterized in that: N1=N3.

7. The anti-shake die bonding method according to claim 6, characterized in that: The step of laterally moving the film so as to lift the next wafer comprises: First switch the anti-shake adsorption chamber to the vacuum suction state, and then switch the top crystal adsorption hole to the vacuum breaking state.

8. The anti-shake die bonding method according to claim 5, characterized in that: N1=N3+N4.

9. The anti-shake die bonding method according to claim 8, characterized in that: The step of laterally moving the film so as to lift the next wafer comprises: The top crystal adsorption hole is switched to a vacuum breaking state and the vacuum suction state of the anti-shake adsorption chamber is maintained.

10. The anti-shake die bonding method according to claim 4, characterized in that: The upper end opening of the anti-shake adsorption cavity is in an annular structure, and the pinhole and each of the top crystal adsorption holes are located in the annular structure.

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