Encapsulant layer, composite film, method for forming the same, and encapsulation method for semiconductor device

Abstract

An embodiment of the present application provides an encapsulation adhesive layer, a composite film and a method for forming the same, and a method for encapsulating a semiconductor device. The encapsulation adhesive layer includes a bonding region and a bonding alignment region. The bonding alignment region is adjacent to the bonding region and protrudes relative to the edge of the bonding region. During the process of bonding the encapsulation adhesive layer, the positioning function of the bonding alignment region of the encapsulation adhesive layer itself is utilized to improve the bonding accuracy and yield of the encapsulation adhesive layer.

Description

Technical Field

[0001] This application relates to the technical field of encapsulation adhesives, and particularly to an encapsulation adhesive layer, a composite film, a method for forming the same, and a method for encapsulating a semiconductor device. Background Art

[0002] To ensure that semiconductor devices such as chips have a certain strength, it is necessary to bond an encapsulation adhesive layer as a protective film for the chip on the back of the chip including the circuit. The process of bonding the encapsulation adhesive layer on the back of the chip is as follows: an encapsulation adhesive layer is attached to a wafer including the chip, the encapsulation adhesive layer is cured, and finally the wafer and the encapsulation adhesive layer are cut to obtain a chip encapsulated with the encapsulation adhesive layer. Since the fitting accuracy of the encapsulation adhesive layer attached to the wafer will affect the effect of the encapsulated chip, it is necessary to improve the fitting accuracy of the encapsulation adhesive layer attached to the wafer. Summary of the Invention

[0003] Embodiments of the present application provide an encapsulation adhesive layer, a composite film, a method for forming the same, and a method for encapsulating a semiconductor device, so as to improve the fitting accuracy of the encapsulation adhesive layer and at least partially solve the above technical problems.

[0004] To achieve the above object, according to the first aspect of the embodiments of the present application, an encapsulation adhesive layer is provided. The encapsulation adhesive layer includes a fitting area and a fitting alignment area. The fitting alignment area is adjacent to the fitting area and protrudes relative to the edge of the fitting area.

[0005] According to the second aspect of the present application, embodiments of the present application provide a composite film, which includes the encapsulation adhesive layer and a dicing layer. The encapsulation adhesive layer and the dicing layer are stacked. The orthographic projection of the encapsulation adhesive layer on the dicing layer is located within the dicing layer.

[0006] According to the third aspect of the present application, embodiments of the present application further provide a method for forming a composite film, including:

[0007] Forming the above encapsulation adhesive layer;

[0008] Forming a dicing layer;

[0009] Attaching the encapsulation adhesive layer to the dicing layer.

[0010] According to the fourth aspect of the present application, embodiments of the present application further provide a method for encapsulating a semiconductor device, including:

[0011] Providing the above composite film and a wafer to be cut;

[0012] Attaching the wafer to be cut to the fitting area according to the fitting alignment area;

[0013] The to-be-cut wafer and the encapsulation adhesive layer are cut to obtain a plurality of encapsulated semiconductor devices. The encapsulated semiconductor devices include semiconductor devices and an encapsulation layer located on the semiconductor devices. The semiconductor devices are obtained by cutting the to-be-cut wafer, and the encapsulation layer is obtained by cutting the encapsulation adhesive layer.

[0014] In the encapsulation adhesive layer, composite film and its formation method, and semiconductor device encapsulation method according to some embodiments of the present application, during the process of attaching the encapsulation adhesive layer, the positioning function of the self-aligning region of the encapsulation adhesive layer is utilized to improve the attachment accuracy and yield rate of the encapsulation adhesive layer. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 It is a schematic plan view of the encapsulation adhesive layer provided by an embodiment of the present application;

[0016] Figure 2 It is a schematic plan view of the composite film provided by an embodiment of the present application;

[0017] Figure 3 It is a schematic cross-sectional structure view taken along the Figure 2 shown A-A' tangent line provided by an embodiment of the present application;

[0018] Figure 4 It is a schematic cross-sectional structure view taken along the Figure 2 shown A-A' tangent line provided by another embodiment of the present application;

[0019] Figure 5 It is a schematic flow chart of the formation method of the composite film provided by an embodiment of the present application;

[0020] Figures 6 to 17 It is a schematic view of the formation process of the composite film provided by an embodiment of the present application;

[0021] Figure 18 It is a schematic flow chart of the encapsulation method of the semiconductor device provided by an embodiment of the present application;

[0022] Figures 19 to 20 It is a schematic view of the encapsulation process of the semiconductor device provided by an embodiment of the present application;

[0023] Figures 21 to 26 It is an effect circuit diagram for detecting the internal structure of the to-be-cut wafer using infrared light in some embodiments and comparative examples.

[0024] The reference numerals are as follows:

[0025] 100, composite film;

[0026] 110, initial encapsulation adhesive layer; 11, encapsulation adhesive layer;

[0027] 111, attachment region;

[0028] 112. Bonding alignment area;

[0029] 112A. First arc edge; 112B. Second arc edge;

[0030] 21. Dicing layer; 22. Cutting tape; 23. Antistatic adhesive layer;

[0031] 30. Initial double-sided adhesive layer; 31. Double-sided adhesive layer;

[0032] 41. Release layer; 42. First release layer; 43. Second release layer;

[0033] G. Gap;

[0034] 51. Wafer to be diced;

[0035] 61. Iron frame;

[0036] 71. Infrared light detection component; 72. Infrared light emitter; 73. Infrared light receiver;

[0037] 81. Infrared light source; 82. Infrared imager; L1, L2, Infrared light. Detailed implementation manners

[0038] Next, the technical solutions in the embodiments of the present application will be clearly and completely described with reference to the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative efforts shall fall within the protection scope of the present application.

[0039] Refer to Figure 1 As shown, an encapsulation adhesive layer 11 is provided in an embodiment of the present application. The encapsulation adhesive layer 11 is used to encapsulate semiconductor devices such as wafers and chips, thereby playing a role in protecting the semiconductor devices.

[0040] The encapsulation adhesive layer 11 includes a bonding area 111 and a bonding alignment area 112. The bonding alignment area 112 is adjacent to the bonding area 111 and protrudes relative to the edge of the bonding area 111. In this way, during the process of bonding the encapsulation adhesive layer 11, the positioning function of the bonding alignment area 112 of the encapsulation adhesive layer 11 itself is utilized to improve the bonding accuracy and yield of the encapsulation adhesive layer 11.

[0041] It should be noted that, compared with additionally providing other structures to achieve the bonding and positioning of the encapsulation adhesive layer, the bonding alignment area 112 is provided on the encapsulation adhesive layer 11 in the embodiment of the present application, which not only simplifies the bonding process of the encapsulation adhesive layer 11, but also improves the bonding yield of the encapsulation adhesive layer 11.

[0042] In some embodiments, referring to Figure 1 As shown, the two fitting alignment regions 112 are respectively located on the opposite sides in the radial direction of the fitting region 111. The two fitting alignment regions 112 located on the opposite sides in the radial direction are respectively used to locate the starting point and the ending point of the fitting of the encapsulation adhesive layer 11 itself, thereby realizing the fitting positioning of the encapsulation adhesive layer 11 and improving the fitting accuracy and yield.

[0043] The principle of the two fitting alignment regions 112 to realize fitting positioning is that before the fitting region 111 of the encapsulation adhesive layer 11 is fitted to the structure to be encapsulated, infrared light moves from the region outside the encapsulation adhesive layer 11 to one fitting alignment region 112, and the transmittance of the infrared light undergoes the first mutation. Then, the infrared light moves from one fitting alignment region 112 into the fitting region 111 and then moves along the radial direction of the fitting region 111, and the structure to be encapsulated is fitted on the fitting region 111. Finally, after the entire structure to be encapsulated is fitted on the fitting region 111 of the encapsulation adhesive layer 11, the infrared light moves from the fitting region 111 to the other fitting alignment region 112 and then moves outside the encapsulation adhesive layer 11, and the transmittance of the infrared light undergoes the second mutation. Therefore, through the two mutations of the transmittance of the infrared light, it can be automatically judged that the wafer 51 to be cut is fitted to the fitting region 111 of the encapsulation adhesive layer 11, and the accuracy and yield of the fitting of the encapsulation adhesive layer 11 to the structure to be encapsulated are improved.

[0044] The shape of the fitting region 111 matches the shape of the structure to be encapsulated, which can improve the yield of the fitting of the encapsulation adhesive layer 11 to the structure to be encapsulated. In some embodiments, the fitting region 111 includes an arc-shaped edge to match the shape of the structure to be encapsulated such as a wafer, thereby improving the fitting yield of the encapsulation adhesive layer 11. Moreover, when forming the fitting region 111 by using a cutting process such as die cutting, the arc-shaped edge can reduce the difficulty of the cutting process such as die cutting.

[0045] The size of the fitting region 111 is larger than the size of the surface to be encapsulated of the structure to be encapsulated, so as to improve the problem that the accuracy of the fitting of the structure to be encapsulated to the fitting region 111 is low due to fitting deviation. For example, for an 8-inch wafer, the diameter of the fitting region 111 can be 200 mm - 240 mm. For a 12-inch wafer, the diameter of the fitting region 111 can be 300 mm - 340 mm.

[0046] In some embodiments, referring to Figure 1 As shown, the shape of the fitting region 111 can be circular. At this time, the edge of the fitting region 111 is an arc-shaped edge.

[0047] In some other embodiments, the fitting region 111 may include an arc-shaped edge and a positioning edge, and the arc-shaped edge is connected to the positioning edge to match the shape of the structure to be encapsulated with a positioning edge. In some other embodiments, the positioning edge can be a straight-edge.

[0048] In some embodiments, the fitting alignment area 112 includes an arc-shaped edge, which reduces the difficulty of forming the fitting alignment area 112 by cutting processes such as die-cutting.

[0049] In some embodiments, the fitting alignment area 112 includes a first arc-shaped edge 112A. The first arc-shaped edge 112A is adjacent to the edge of the fitting area 111 to achieve a smooth transition between the fitting area 111 and the fitting alignment area 112, and reduce the difficulty of switching between the fitting area 111 and the fitting alignment area 112 in cutting processes such as die-cutting.

[0050] In some embodiments, as Figure 1 shown, the first arc-shaped edge 112A is recessed towards the inside of the fitting alignment area 112.

[0051] In some embodiments, the fitting alignment area 112 further includes a second arc-shaped edge 112B. The second arc-shaped edge 112B is connected between two first arc-shaped edges 112A, which reduces the difficulty of forming the fitting alignment area 112 by cutting processes such as die-cutting.

[0052] In some embodiments, the second arc-shaped edge 112B protrudes away from the fitting alignment area 112.

[0053] In some embodiments, the curvature of the first arc-shaped edge 112A is smaller than the curvature of the second arc-shaped edge 112B, so that the curvature of the first arc-shaped edge 112A is larger, reducing the difficulty of forming the first arc-shaped edge 112A by cutting processes such as die-cutting. At the same time, the curvature of the second arc-shaped edge 112B is smaller, shortening the time for forming the curvature of the second arc-shaped edge 112B.

[0054] In some embodiments, referring to Figure 1 shown, the width W1 of the fitting alignment area 112 is 5 mm to 30 mm, reducing the risk that the fitting detection light such as infrared light cannot recognize the fitting alignment area 112, and at the same time shortening the manufacturing duration of the fitting alignment area 112.

[0055] In some embodiments, referring to Figure 1 shown, the length LG1 of the fitting alignment area 112 is 5 mm to 40 mm, reducing the risk that the fitting detection light such as infrared light cannot recognize the fitting alignment area 112, and at the same time shortening the manufacturing duration of the fitting alignment area 112.

[0056] Wherein, the width W1 of the fitting alignment area 112 is equal to the dimension of the fitting alignment area 112 along its width direction. The length LG1 of the fitting alignment area 112 is equal to the dimension of the fitting alignment area 112 along the radial direction of the fitting area 111. The direction corresponding to the width W1 of the fitting alignment area 112 is perpendicular to the direction corresponding to the length LG1 of the fitting alignment area 112.

[0057] In some embodiments, the thickness of the encapsulant layer 11 is 10 μm to 150 μm, ensuring the encapsulation effect of the encapsulant layer 11 on the semiconductor device and improving the transmittance of the encapsulant layer 11 to fitting detection light such as infrared light.

[0058] Optionally, the thickness of the encapsulant layer 11 is 15 μm to 100 μm, 20 μm to 80 μm, or 25 μm to 60 μm.

[0059] It can be understood that the thickness of the encapsulant layer 11 can take any value between 10 μm and 150 μm. For example, 20 μm, 25 μm, 30 μm, 35 μm, 40 μm, 50 μm, 60 μm, 70 μm, 80 μm, 90 μm, 100 μm, 110 μm, or 120 μm.

[0060] In some embodiments, the encapsulant layer 11 includes a modified epoxy resin and a curing agent. The modified epoxy resin includes bisphenol A epoxy resin and phenolic F-type epoxy resin. The bisphenol A epoxy resin and the phenolic F-type epoxy resin are compounded to reduce the thermal shrinkage rate of the encapsulant layer 11 and improve the problem that the transmittance is low when infrared light passes through both the encapsulant layer 11 and the dicing layer 21 below it due to a large difference in thermal shrinkage rate, and improve the image clarity of observing the internal structure of the semiconductor device encapsulated by the encapsulant layer 11 with internal detection light such as infrared light.

[0061] It should be noted that in the related art, the thermal shrinkage rate between the encapsulant layer and the dicing layer is large. For example, the difference between the two is greater than or equal to 0.22, resulting in wrinkles at the interface between the cured encapsulant layer and the dicing layer. After the infrared light passes through the wrinkles, diffuse reflection occurs, resulting in a low transmittance of the infrared light passing through the cured encapsulant layer and the dicing layer, and the image of observing the internal structure of the semiconductor device with internal detection light such as infrared light is relatively blurred.

[0062] It should be noted that the bisphenol A epoxy resin has good mechanical properties, electrical insulation properties, good toughness and adhesiveness, and the phenolic F-type epoxy resin has a high epoxy content and high viscosity, which is conducive to improving the crosslinking density of the cured product. When the two are compounded, while reducing the thermal shrinkage rate of the encapsulant layer 11, it ensures that the cured encapsulant layer 11 has good mechanical properties, electrical insulation properties, good toughness and adhesiveness.

[0063] In some embodiments, the bisphenol A epoxy resin may include at least one of liquid bisphenol A epoxy resin, solid bisphenol A epoxy resin, and modified bisphenol A epoxy resin. Exemplarily, the bisphenol A epoxy resin may be a modified bisphenol A epoxy resin.

[0064] In some embodiments, the mass percentage of the modified epoxy resin in the encapsulation adhesive layer 11 is 13% - 22%, which reduces the thermal shrinkage rate of the encapsulation adhesive layer 11 while taking into account the properties such as the viscosity of the cured encapsulation adhesive layer 11.

[0065] Optionally, the mass percentage of the modified epoxy resin in the encapsulation adhesive layer 11 is 15% - 18%, 17.5 - 18.5, 14% - 16%, 13% - 20% or 13% - 18%.

[0066] It can be understood that the mass percentage of the modified epoxy resin in the encapsulation adhesive layer 11 can be any value between 13% and 22%. For example, 13%, 14%, 15%, 16%, 17%, 18%, 19%, 20%, 21% or 22%.

[0067] In some embodiments, the mass ratio of bisphenol A epoxy resin to phenolic F-type epoxy resin is (10 - 14):(1 - 9), which reduces the thermal shrinkage rate of the encapsulation adhesive layer 11 itself and improves the problem that the inconsistent thermal shrinkage rates of the encapsulation adhesive layer 11 and the dicing layer 21 result in a low transmittance of infrared light passing through both.

[0068] Optionally, the mass ratio of bisphenol A epoxy resin to phenolic F-type epoxy resin is (10 - 14):(2 - 8). In this way, the thermal shrinkage rate of the encapsulation adhesive layer 11 itself is reduced, and the problem that the inconsistent thermal shrinkage rates of the encapsulation adhesive layer 11 and the dicing layer 21 result in a low transmittance of infrared light passing through both is improved. Moreover, this ratio also improves the transmittance of the encapsulation adhesive layer 11 itself to infrared light before curing, so as to improve the transmittance of the cured encapsulation adhesive layer 11 itself to infrared light.

[0069] It should be noted that in the practical process of using the compound of phenolic F-type epoxy resin and bisphenol A epoxy resin to reduce the thermal shrinkage rate of the encapsulation adhesive layer 11, the applicant found that the addition amount of phenolic F-type epoxy resin would affect the transmittance of the encapsulation adhesive layer 11 itself to infrared light before and after curing. Through analysis, it was found that because the color of phenolic F-type epoxy resin itself is light brownish yellow, this color would affect the transmittance of the encapsulation adhesive layer 11 itself to infrared light before curing, and thus affect the transmittance of the cured encapsulation adhesive layer 11 itself to infrared light.

[0070] Based on this discovery, the embodiments of the present application optimize the ratio of bisphenol A epoxy resin to phenolic F-type epoxy resin, so that the phenolic F-type epoxy resin has a suitable proportion in the modified epoxy resin, reducing the thermal shrinkage rate of the encapsulation adhesive layer 11 itself while improving the transmittance of the encapsulation adhesive layer 11 itself to infrared light before curing.

[0071] Optionally, the mass ratio of bisphenol A epoxy resin to phenolic F-type epoxy resin is (10 - 14):(3 - 6).

[0072] In some embodiments, in the encapsulant layer 11, the ratio of the mass of bisphenol A epoxy resin to the mass of phenolic F-type epoxy resin is 1.5 to 8. While reducing the thermal shrinkage rate of the encapsulant layer 11 itself, the transmittance of the encapsulant layer 11 itself to infrared light before curing is improved. Moreover, since the proportion of bisphenol A epoxy resin is relatively large, it can also ensure that the cured encapsulant layer 11 has good toughness and adhesiveness as well as good mechanical properties and electrical insulation properties.

[0073] Optionally, in the encapsulant layer 11, the ratio of the mass of bisphenol A epoxy resin to the mass of phenolic F-type epoxy resin is 1.8 to 6 or 2 to 4.

[0074] It can be understood that in the encapsulant layer 11, the ratio of the mass of bisphenol A epoxy resin to the mass of phenolic F-type epoxy resin can take any value between 1.5 and 8. For example, 1.5, 2, 3, 4, 5, 6, 7, or 8.

[0075] In some embodiments, the mass ratio of bisphenol A epoxy resin to phenolic F-type epoxy resin is (10 to 14):(1 to 9), and the epoxy equivalent of bisphenol A epoxy resin is 180 g / eq to 190 g / eq, and the epoxy equivalent of phenolic F-type epoxy resin is 220 g / eq to 240 g / eq. Two epoxy resins with reasonable epoxy equivalents are compounded in a suitable ratio, while reducing the thermal shrinkage rate of the encapsulant layer 11 itself, the transmittance of the encapsulant layer 11 itself to infrared light before curing is improved. Moreover, the compounding of two epoxy resins with different epoxy equivalents in a certain ratio also takes into account other properties of the encapsulant layer 11, such as storage modulus, glass transition temperature, adhesiveness, and coefficient of thermal expansion, etc.

[0076] It should be noted that for the encapsulant layer 11, the selection of the epoxy equivalent of the epoxy resin needs to consider the balance among various properties of the encapsulant layer 11, rather than simply making the epoxy equivalent higher or lower. Based on the premise that other properties of the encapsulant layer 11 meet the basic requirements, by selecting the epoxy equivalent of bisphenol A epoxy resin to be 180 g / eq to 190 g / eq and the epoxy equivalent of phenolic F-type epoxy resin to be 220 g / eq to 240 g / eq, while reducing the thermal shrinkage rate of the encapsulant layer 11 itself, the transmittance of the encapsulant layer 11 itself to infrared light before curing is improved.

[0077] It can be understood that the epoxy equivalent of bisphenol A epoxy resin can take at least one of the values between 180 g / eq and 190 g / eq. For example, 180 g / eq, 185 g / eq, or 190 g / eq.

[0078] It can be understood that the epoxy equivalent of the phenolic F-type epoxy resin can be at least one between 220 g / eq and 240 g / eq, such as 220 g / eq, 225 g / eq, 230 g / eq, 235 g / eq or 240 g / eq.

[0079] In some embodiments, the encapsulating adhesive layer 11 further includes phenoxy resin. The phenoxy resin has good flexibility and adhesiveness, which can improve the adhesiveness of the cured encapsulating adhesive layer 11 and the mechanical properties of the cured encapsulating adhesive layer 11 at the same time.

[0080] In some embodiments, the mass ratio of the phenoxy resin to the modified epoxy resin is (8 - 12):(13 - 22), which can improve the transmittance of the cured encapsulating adhesive layer 11 to infrared light, and at the same time take into account the properties such as the adhesiveness and mechanical properties of the cured encapsulating adhesive layer 11.

[0081] Optionally, the mass ratio of the phenoxy resin to the modified epoxy resin is (8 - 12):(15 - 20), or (8 - 12):(15 - 18).

[0082] In some embodiments, in the encapsulating adhesive layer 11, the ratio of the mass of the modified epoxy resin to the mass of the phenoxy resin is greater than 1 and less than or equal to 2.5, which can improve the transmittance of the cured encapsulating adhesive layer 11 to infrared light, and at the same time take into account the properties such as the adhesiveness and mechanical properties of the cured encapsulating adhesive layer 11.

[0083] Optionally, in the encapsulating adhesive layer 11, the ratio of the mass of the modified epoxy resin to the mass of the phenoxy resin is 1.2 - 2.2 or 1.5 - 1.8.

[0084] In some embodiments, the weight-average molecular weight of the phenoxy resin is 30000 g / mol - 40000 g / mol, which can improve the properties such as the adhesiveness and mechanical properties of the cured encapsulating adhesive layer 11.

[0085] It can be understood that the weight-average molecular weight of the phenoxy resin can be at least one between 30000 g / mol and 40000 g / mol, such as 30000 g / mol, 35000 g / mol or 40000 g / mol.

[0086] In some embodiments, the mass ratio of the curing agent to the modified epoxy resin is (16 - 20):(13 - 22), which can ensure that the modified epoxy resin can fully react and cure.

[0087] In some embodiments, the curing agent includes naphthol curing agents. The hydroxyl groups in the naphthol curing agents react with the epoxy groups in the epoxy resin, and through stepwise polymerization, the segments are crosslinked into a three-dimensional structure molecule, improving the strength of the cured encapsulation adhesive layer 11. In some embodiments, the hydroxyl equivalent of the naphthol curing agent is 100 g / eq to 120 g / eq.

[0088] In some embodiments, the encapsulation adhesive layer 11 further includes a curing accelerator. The mass ratio of the curing agent to the curing accelerator is (16 to 20):1, which can improve the strength of the cured encapsulation adhesive layer 11 while accelerating the curing reaction rate.

[0089] In some embodiments, at least one of phosphine curing accelerators. The phosphine curing accelerators may include, but are not limited to, triphenylphosphine.

[0090] In some embodiments, the encapsulation adhesive layer 11 further includes a colorant. The colorant is used to dye the encapsulation adhesive layer 11. The mass percentage of the colorant in the encapsulation adhesive layer 11 is 0.05% to 0.3%, to ensure the recognition of the printed marks on the structure to be encapsulated after encapsulation, and at the same time to improve the influence of the excessive proportion of the colorant on the transmittance of infrared light through the encapsulation adhesive layer 11 before and after curing.

[0091] Optionally, the mass percentage of the colorant in the encapsulation adhesive layer 11 is 0.05% to 0.25%, to ensure the recognition of the printed marks on the structure to be encapsulated after encapsulation, and at the same time to improve the influence of the excessive proportion of the colorant on the transmittance of infrared light through the encapsulation adhesive layer 11 before and after curing.

[0092] Optionally, the mass percentage of the colorant in the encapsulation adhesive layer 11 is 0.05% to 0.2%, 0.08% to 0.18 or 0.1% to 0.18%.

[0093] It can be understood that the mass percentage of the colorant in the encapsulation adhesive layer 11 can take any value between 0.05% and 0.25%, such as 0.05%, 0.1%, 0.15%, 0.2%, 0.23% or 0.25%.

[0094] In some embodiments, the colorant includes, but is not limited to, black colorants such as carbon black, to enhance the recognition of the printed marks on the structure to be encapsulated.

[0095] In some embodiments, the particle size of the colorant is 10 nanometers to 25 nanometers, to enhance the uniformity of the colorant dispersed in the encapsulation adhesive layer 11.

[0096] Optionally, the particle size of the colorant is 12 nanometers to 22 nanometers or 15 nanometers to 20 nanometers.

[0097] In some embodiments, the encapsulant layer 11 further includes a filler, which can improve the mechanical strength and glass transition temperature of the cured encapsulant layer 11.

[0098] In some embodiments, the mass percentage of the filler in the encapsulant layer 11 is 48% - 55%, ensuring that resins such as modified epoxy resins can infiltrate the filler, improving the bonding force between the filler and the resin, and enhancing the mechanical strength and glass transition temperature of the cured encapsulant layer 11.

[0099] In some embodiments, the D50 particle size of the filler is 0.2 μm - 1 μm, improving the dispersion uniformity of the filler and enhancing the mechanical strength and glass transition temperature of the cured encapsulant layer 11.

[0100] Optionally, the D50 particle size of the filler is 0.4 μm - 0.8 μm.

[0101] In some embodiments, the filler includes silica. In some embodiments, the silica may include spherical silica.

[0102] In some embodiments, the maximum light transmittance of the encapsulant layer 11 for light with wavelengths of 400 nm - 1100 nm is greater than or equal to 20%. Since the light transmittance of the encapsulant layer 11 before curing is usually greater than its maximum light transmittance after curing, increasing the light transmittance of the encapsulant layer 11 before curing for light with wavelengths of 400 nm - 1100 nm can increase the maximum light transmittance of the cured encapsulant layer 11 for light with wavelengths of 400 nm - 1100 nm.

[0103] Optionally, the maximum light transmittance of the encapsulant layer 11 for light with wavelengths of 400 nm - 1100 nm is greater than or equal to 25%, 30%, or 33%.

[0104] In some embodiments, the maximum light transmittance of the encapsulant layer 11 for light with wavelengths of 400 nm - 1100 nm is less than or equal to 60%, so as to facilitate the alignment during the lamination of the encapsulant layer by utilizing the difference in light transmittance between the encapsulant layer and other film layers.

[0105] Optionally, the maximum light transmittance of the encapsulant layer 11 for light with wavelengths of 400 nm - 1100 nm is 25% - 55%, 30% - 48%, or 33% - 45%.

[0106] Optionally, the maximum light transmittance of the encapsulant layer 11 for light with wavelengths of 400 nm - 1100 nm can take any value between 20% and 60%. For example, 20%, 25%, 30%, 33%, 35%, 40%, 45%, 50%, 55%, or 60%.

[0107] In some embodiments, the maximum transmittance of the encapsulant layer 11 to infrared light is greater than or equal to 20%, so as to improve the transmittance of the encapsulant layer 11 to infrared light before curing, and further improve the transmittance of the encapsulant layer 11 to infrared light after curing.

[0108] Optionally, the maximum transmittance of the encapsulant layer 11 to infrared light is greater than or equal to 25%, 30%, or 33%.

[0109] In some embodiments, the maximum transmittance of the encapsulant layer 11 to infrared light is less than or equal to 60%.

[0110] Optionally, the maximum transmittance of the encapsulant layer 11 to infrared light is 25% - 55%, 30% - 48%, or 33% - 45%.

[0111] Optionally, the maximum transmittance of the encapsulant layer 11 to infrared light can take any value between 20% and 60%. For example, 20%, 25%, 30%, 33%, 35%, 40%, 45%, 50%, 55%, or 60%.

[0112] In some embodiments, the wavelength of the infrared light can be 850 nanometers to 950 nanometers, but is not limited thereto.

[0113] In some embodiments, the maximum transmittance of the cured encapsulant layer 11 to light with a wavelength of 400 nm - 1100 nm is greater than or equal to 17.5%. The process parameters for curing the encapsulant layer 11 include: the temperature is 125°C - 135°C, and heating is for 1 hour - 3 hours. In this way, the image clarity of the internal structure of the semiconductor device encapsulated by the encapsulant layer 11 detected by infrared light is improved.

[0114] Optionally, the maximum transmittance of the cured encapsulant layer 11 to light with a wavelength of 400 nm - 1100 nm is greater than or equal to 23%, 25%, or 28%, further improving the image clarity of the internal structure of the semiconductor device encapsulated by the encapsulant layer 11 detected by infrared light.

[0115] In some embodiments, the maximum transmittance of the cured encapsulant layer 11 to infrared light is greater than or equal to 17.5%.

[0116] Optionally, the maximum transmittance of the cured encapsulant layer 11 to infrared light is greater than or equal to 23%, 25%, or 28%, further improving the image clarity of the internal structure of the semiconductor device encapsulated by the encapsulant layer 11 detected by infrared light.

[0117] Exemplarily, the process parameters for curing the encapsulant layer 11 include: the temperature is 130°C, and heating is for 2 hours.

[0118] In some embodiments, the thermal shrinkage rate of the encapsulant layer 11 when heated at 125°C to 135°C for 1 hour to 3 hours is 0.1% to 0.3%. By reducing the thermal shrinkage rate of the encapsulant layer 11, the problem that the infrared light has a relatively low transmittance when passing through both the encapsulant layer 11 and the dicing layer 21 below it due to a large difference in thermal shrinkage rates is improved, and the image clarity of the internal structure of the semiconductor device encapsulated by the encapsulant layer 11 detected by infrared light is enhanced.

[0119] Optionally, the thermal shrinkage rate of the encapsulant layer 11 when heated at 125°C to 135°C for 1 hour to 3 hours is 0.12% to 0.25%, 0.13% to 0.2%, or 0.15% to 0.25%.

[0120] It can be seen from this that the encapsulant layer 11 of the embodiment of the present application utilizes the positioning function of its own fitting alignment area 112 to improve the fitting accuracy and yield of the encapsulant layer 11. Moreover, in the embodiment of the present application, the components and component ratios of the encapsulant layer 11 are optimized to increase the maximum transmittance of the encapsulant layer 11 to light with a wavelength of 400 nm to 1100 nm before curing, ensuring that the transmittance of the fitting alignment area 112 to light with a wavelength of 400 nm to 1100 nm is within a suitable range, thereby improving the fitting accuracy of the encapsulant layer 11 fitted by infrared light and other fitting detection lights in cooperation with the fitting alignment area 112. In addition, the difference in thermal shrinkage rates between the encapsulant layer 11 and the dicing layer 21 is reduced, the transmittance of the encapsulant layer 11 to infrared light after curing is increased, and the image clarity of the internal structure of the semiconductor device encapsulated by the encapsulant layer 11 detected by infrared light is enhanced. In other words, the components and component ratios of the encapsulant layer 11 are optimized to meet the performance requirements of the encapsulant layer 11 before and after curing.

[0121] Refer to Figures 2 to 4 As shown in the figure, the embodiment of the present application also provides a composite film 100. This composite film 100 is not only used for the encapsulation of wafers in the field of advanced packaging, but also for the cutting of encapsulated wafers, simplifying the wafer encapsulation and cutting processes, improving the fitting accuracy and yield of the encapsulant layer 11. In addition, the composite film 100 also improves its adhesion to the iron frame 61, improving the encapsulation efficiency.

[0122] Refer to Figures 2 to 3 As shown in the figure, the composite film 100 includes the above-mentioned encapsulant layer 11 and dicing layer 21. The encapsulant layer 11 and the dicing layer 21 are laminated. The orthographic projection of the encapsulant layer 11 on the dicing layer 21 is located within the dicing layer 21. In this way, after the encapsulant layer 11 is attached to the structure to be encapsulated, when the encapsulated structure to be encapsulated and the encapsulant layer 11 need to be cut, the dicing layer 21 can provide a sufficiently large support area.

[0123] In some embodiments, the maximum transmittance of light with a wavelength of 400 nm to 1100 nm passing through the laminate formed by the scribing layer and the encapsulation adhesive layer is greater than or equal to 20%. In this way, it is ensured that the maximum transmittance of light with a wavelength of 400 nm to 1100 nm passing through the laminate formed by the scribing layer and the encapsulation adhesive layer is relatively large, which is beneficial to the relatively large maximum transmittance of the cured encapsulation adhesive layer 11 and the scribing layer to light with a wavelength of 400 nm to 1100 nm, and improves the image clarity of observing the internal structure of the semiconductor device with infrared light.

[0124] Optionally, the maximum transmittance of light with a wavelength of 400 nm to 1100 nm passing through the laminate formed by the scribing layer and the encapsulation adhesive layer is greater than or equal to 25%, 30%, or 33%.

[0125] In some embodiments, the maximum transmittance of light with a wavelength of 400 nm to 1100 nm passing through the laminate formed by the scribing layer and the encapsulation adhesive layer is less than or equal to 60%.

[0126] It can be understood that the maximum transmittance of light with a wavelength of 400 nm to 1100 nm passing through the laminate formed by the scribing layer and the encapsulation adhesive layer can take any value between 20% and 60%. For example, 20%, 25%, 30%, 33%, 35%, 40%, 45%, 50%, 55%, or 60%.

[0127] In some embodiments, the maximum transmittance of light with a wavelength of 400 nm to 1100 nm passing through the laminate formed by the scribing layer and the cured encapsulation adhesive layer is greater than or equal to 17.5%. The process parameters for curing the encapsulation adhesive layer include: a temperature of 125 °C to 135 °C and heating for 1 hour to 3 hours. In this way, the transmittance of infrared light passing through the laminate formed by the scribing layer and the cured encapsulation adhesive layer is also relatively large, and the image clarity of observing the internal structure of the semiconductor device with infrared light is improved.

[0128] Optionally, the maximum transmittance of light with a wavelength of 400 nm to 1100 nm passing through the laminate formed by the scribing layer and the cured encapsulation adhesive layer is greater than or equal to 23%, 25%, or 28%, further improving the image clarity of observing the internal structure of the semiconductor device with infrared light.

[0129] In some embodiments, refer to Figures 2 to 4As shown, the composite film 100 also includes a double-sided adhesive layer 31. The double-sided adhesive layer 31 is stacked with the dicing layer 21. The double-sided adhesive layer 31 is arranged around the bonding area 111. There is a gap G between the double-sided adhesive layer 31 and the edge of the bonding area 111. The bonding recognition area 112 is located in the gap G. In the process of cutting the structure to be packaged and the packaging adhesive layer 11, the double-sided adhesive layer 31 plays the role of bonding the iron frame and the dicing layer 21, thereby reducing the risk of the structure to be packaged on the dicing layer 21 falling off. Moreover, in the gap G between the double-sided adhesive layer 31 and the bonding area 111, the area other than the bonding recognition area 112 cannot achieve bonding positioning. In other words, the gap G between the double-sided adhesive layer 31 and the bonding area 111 cooperates with the bonding recognition area 112 to improve the bonding positioning accuracy of the bonding recognition area 112.

[0130] In some embodiments, see Figure 2 As shown, the double-sided adhesive layer 31 is in the shape of a ring. When the double-sided adhesive layer 31 is in the shape of a ring, the diameter of the inner circle of the double-sided adhesive layer 31 is greater than the diameter of the bonding area 111 of the packaging adhesive layer 11.

[0131] In some embodiments, the double-sided adhesive layer 31 has a color to enhance the recognition of the double-sided adhesive layer 31 and facilitate fixing the double-sided adhesive layer 31 on the iron frame. In some embodiments, the color of the double-sided adhesive layer 31 is selected from at least one of black, blue and white.

[0132] In some embodiments, see Figures 2 to 4 As shown, the laminating recognition area 112 partially overlaps with the double-sided adhesive layer 31 , which reduces the laminating accuracy requirement when the double-sided adhesive layer 31 and the packaging adhesive layer 11 are laminated, thereby reducing the difficulty of the process of forming the composite film 100 .

[0133] In some embodiments, see Figure 3 and Figure 4 As shown, along the radial direction of the bonding area 111, the size of the overlapped portion of the bonding recognition area 112 and the double-sided adhesive layer 31 is C. C is 1 micron to 40 microns. In this way, the bonding accuracy requirement when the double-sided adhesive layer 31 and the packaging adhesive layer 11 are bonded is reduced, and the difficulty of forming the bonding recognition area 112 is reduced.

[0134] In some embodiments, see Figure 3 As shown, when the bonding recognition area 112 partially overlaps with the double-sided adhesive layer 31 , part of the double-sided adhesive layer 31 may be located between part of the bonding recognition area 112 and the scribe layer 21 .

[0135] In other embodiments, see Figure 4 As shown, when the lamination recognition area 112 partially overlaps with the double-sided adhesive layer 31 , part of the lamination recognition area 112 may be located between the double-sided adhesive layer 31 and the scribe layer 21 .

[0136] In some embodiments, the thickness of the double-sided adhesive layer 31 is 20 um to 80 um. In this way, the double-sided adhesive layer 31 has an appropriate thickness, ensuring that it can provide sufficient adhesiveness during the process of bonding it to the iron frame 61 and during the high-temperature curing process of the encapsulation adhesive layer 11, reducing the risk of the double-sided adhesive layer 31 peeling off from the iron frame 61, and further reducing the risk of the structure to be encapsulated falling. Moreover, with an appropriate thickness, during the process of bonding the double-sided adhesive layer 31 to the iron frame 61 and during the high-temperature curing process of the encapsulation adhesive layer 11, it also reduces the risk that the double-sided adhesive layer 31 shrinks due to its excessive thickness, resulting in warping at the edge where the double-sided adhesive layer 31 is connected to the iron frame 61 and causing the double-sided adhesive layer 31 to peel off from the iron frame 61.

[0137] Optionally, the thickness of the double-sided adhesive layer 31 is 20 um to 60 um or 30 um to 50 um.

[0138] It can be understood that the thickness of the double-sided adhesive layer 31 can take any value between 20 um and 80 um. For example, 20 um, 30 um, 40 um, 50 um, 60 um, 70 um, or 80 um.

[0139] In some embodiments, the double-sided adhesive layer 31 includes a substrate layer and adhesive layers on both sides of the substrate layer.

[0140] In some embodiments, the substrate layer may include a polyethylene terephthalate layer, but is not limited thereto.

[0141] In some embodiments, the adhesive layer of the double-sided adhesive layer 31 may include any one of acrylic adhesive and silicone adhesive.

[0142] In some embodiments, the thermal shrinkage rate of the substrate layer of the double-sided adhesive layer 31 when heated at 125 °C to 135 °C for 1 h to 3 h is less than the thermal shrinkage rate of the encapsulation adhesive layer 11 when heated at 125 °C to 135 °C for 1 h to 3 h. In this way, the thermal shrinkage rate of the substrate layer is reduced, and the risk of the double-sided adhesive layer 31 peeling off from the iron frame 61 and warping at the edge during the high-temperature curing process of the encapsulation adhesive layer 11 is reduced. Moreover, when the fitting and positioning area 112 of the encapsulation adhesive layer 11 overlaps with the double-sided adhesive layer 31, the thermal shrinkage rate of the double-sided adhesive layer 31 is smaller, and the stress exerted by the double-sided adhesive layer 31 on the fitting and positioning area 112 of the encapsulation adhesive layer 11 is also smaller, reducing the risk of deformation of the fitting and positioning area 112.

[0143] In some embodiments, the thermal shrinkage rate of the substrate layer of the double-sided adhesive layer 31 when heated at 125 °C to 135 °C for 1 h to 3 h is 0.1% to 0.15%.

[0144] In some embodiments, the shrinkage rate of the dicing layer 21 when heated at 125°C to 135°C for 1 h to 3 h is less than that of the encapsulation adhesive layer 11 when heated at 125°C to 135°C for 1 h to 3 h. Thus, the risk of significant deformation of the dicing layer 21 during the high-temperature curing process of the encapsulation adhesive layer 11 is reduced, ensuring that the dicing layer 21 can provide a sufficiently large support area.

[0145] In some embodiments, the shrinkage rate of the dicing layer 21 when heated at 125°C to 135°C for 1 h to 3 h is HS1. The shrinkage rate of the encapsulation adhesive layer 11 when heated at 125°C to 135°C for 1 h to 3 h is HS2. The absolute value of the difference between HS2 and HS1 is less than 0.2%. Thus, the difference in shrinkage rate between the dicing layer 21 and the encapsulation adhesive layer 11 is small, improving the problem of wrinkles generated at the interface intersection between the two due to inconsistent shrinkage rates. After the encapsulation adhesive layer 11 is cured, the transmittance of infrared light passing through the dicing layer 21 and the encapsulation adhesive layer 11 is increased, improving the image clarity of observing the internal structure of the wafer using infrared light.

[0146] Optionally, the absolute value of the difference between HS2 and HS1 is less than 0.15%, 0.12%, 0.1%, 0.08%, 0.06% or 0.03%.

[0147] In some embodiments, the shrinkage rate of the base layer of the double-sided adhesive layer 31 when heated at 125°C to 135°C for 1 h to 3 h is HS3. The absolute value of the difference between HS3 and HS1 is less than the absolute value of the difference between HS2 and HS1. Thus, the shrinkage rate of the base layer of the double-sided adhesive layer 31 is reduced, and its high-temperature resistance is improved.

[0148] In some embodiments, the shrinkage rate of the dicing layer 21 when heated at 125°C to 135°C for 1 h to 3 h is 0.1% to 0.15%. Thus, the shrinkage rate of the dicing layer 21 is small, reducing the risk of significant deformation of the dicing layer 21 during the high-temperature curing process of the encapsulation adhesive layer 11.

[0149] In some embodiments, the shrinkage rate of the encapsulation adhesive layer 11 when heated at 125°C to 135°C for 1 h to 3 h is 0.1% to 0.3%. Thus, the shrinkage rates of the encapsulation adhesive layer 11 are all small, reducing the difference in shrinkage rate between the encapsulation adhesive layer 11 and the dicing layer 21.

[0150] Optionally, the shrinkage rate of the encapsulation adhesive layer 11 when heated at 125°C to 135°C for 1 h to 3 h is 0.12% to 0.25% or 0.15% to 0.2%.

[0151] In some embodiments, referring to Figures 2 to 4 As shown, the dicing layer 21 includes a cutting tape 22. The cutting tape 22 provides support for the cutting process of the wafer 51 to be cut.

[0152] In some embodiments, the cutting tape 22 includes, but is not limited to, a thermoplastic polyurethane layer (TPU).

[0153] In some embodiments, the thickness of the cutting tape 22 may be greater than the thickness of the encapsulation adhesive layer 11 to ensure that the cutting tape 22 provides sufficient support force.

[0154] In some embodiments, the thickness of the cutting tape 22 may be greater than the thickness of the double-sided adhesive layer 31 to ensure that the cutting tape 22 provides sufficient support force.

[0155] In some embodiments, the thickness of the cutting tape 22 is 30 mm to 200 mm to ensure that the cutting tape 22 provides sufficient support force. Optionally, the thickness of the cutting tape 22 is 100 mm to 200 mm.

[0156] In some embodiments, referring to Figures 2 to 4 As shown, the scribing layer 21 further includes an antistatic adhesive layer 23 to reduce the risk of damage to the structure to be encapsulated caused by static electricity. The antistatic adhesive layer 23 is located between the cutting tape 22 and the encapsulation adhesive layer 11.

[0157] In some embodiments, the peeling force between the antistatic adhesive layer 23 and the iron frame 61 is less than the peeling force between the double-sided adhesive layer 31 and the iron frame 61. Thus, the risk of the double-sided adhesive layer 31 falling off the iron frame 61 is reduced.

[0158] In some embodiments, the thickness of the antistatic adhesive layer 23 is less than the thickness of the double-sided adhesive layer 31 to enhance the adhesion between the double-sided adhesive layer 31 and the iron frame 61.

[0159] In some embodiments, the thickness of the antistatic adhesive layer 23 is less than the thickness of the cutting tape 22 to ensure that the cutting tape 22 provides sufficient support force.

[0160] In some embodiments, the antistatic adhesive layer 23 includes a pressure-sensitive adhesive layer and an antistatic material dispersed in the pressure-sensitive adhesive layer.

[0161] In some embodiments, the thickness of the pressure-sensitive adhesive layer is 5 mm to 50 mm.

[0162] In some embodiments, referring to Figures 2 to 4 As shown, the composite film 100 further includes a release layer 41. The release layer 41 is located on the side of the encapsulation adhesive layer 11 facing away from the scribing layer 21. The release layer 41 protects the encapsulation adhesive layer 11. When the composite film 100 needs to be used, the release layer 41 is peeled off to expose the encapsulation adhesive layer 11.

[0163] In some embodiments, the thickness of the release layer 41 is 5 mm to 300 mm.

[0164] In some embodiments, the release layer 41 and the base material layer of the double-sided adhesive layer 31 are made of the same material. In some embodiments, the release layer 41 may include polyethylene glycol terephthalate (PET).

[0165] It should be noted that when the cutting tape 22 includes a thermoplastic polyurethane layer and the release layer 41 includes polyethylene glycol terephthalate, if the fitting alignment area 112 of the encapsulation adhesive layer 11 is not provided, since the light transmittance between the cutting tape 22 and the release layer 41 it carries is approximate, it is impossible to effectively achieve the fitting positioning of the encapsulation adhesive layer. In other words, for the cutting tape 22 including a thermoplastic polyurethane layer and the release layer 41 including polyethylene glycol terephthalate, the setting of the fitting alignment area 112 can effectively achieve the fitting positioning of the encapsulation adhesive layer.

[0166] In some embodiments, when the release layer 41 and the base material layer of the double-sided adhesive layer 31 are made of the same material, the thermal shrinkage rate of the base material layer of the double-sided adhesive layer 31 heated at 125°C to 135°C for 1 h to 3 h is less than that of the release layer 41 heated at 125°C to 135°C for 1 h to 3 h. In this way, the thermal shrinkage rate of the base material layer of the double-sided adhesive layer 31 is reduced, the high-temperature resistance of the base material layer of the double-sided adhesive layer 31 is improved, and the risk of the double-sided adhesive layer 31 falling off from the iron frame 61 and edge warping during the high-temperature curing process of the encapsulation adhesive layer 11 is reduced.

[0167] It can be seen from this that for the composite film 100 of the embodiment of the present application, by adding the double-sided adhesive layer 31 in the composite film 100, the adhesion between the composite film 100 and the fixing structure such as the iron frame 61 is improved, and the risk of the double-sided adhesive layer 31 falling off from the iron frame 61 before and after the curing of the encapsulation adhesive layer 11 is reduced. Moreover, by optimizing the thickness and the base material layer of the double-sided adhesive layer 31, the risk of the double-sided adhesive layer 31 falling off from the iron frame 61 before and after the curing of the encapsulation adhesive layer 11 is further reduced. In addition, the positional relationship between the double-sided adhesive layer 31 and the fitting alignment area 112 of the encapsulation adhesive layer 11 improves the light transmittance of the cured encapsulation layer and the dicing layer 21 to infrared light, and improves the image clarity of the infrared light detecting the internal structure of the structure to be encapsulated.

[0168] The usage method of the composite film 100 in the embodiment of the present application is as follows: after the encapsulation adhesive layer 11 is attached to the surface of the wafer to be diced, the encapsulation adhesive layer 11 is cured. Then, the wafer is irradiated with infrared light from the side of the dicing layer 21 away from the encapsulation adhesive layer 11 to observe whether there are any abnormal fracture problems with the wafer to be diced 51.

[0169] Refer to Figure 5As shown in the figure, an embodiment of the present application further provides a method for forming a composite film 100, including:

[0170] Step S101: Form an encapsulation adhesive layer;

[0171] Step S104: Form a dicing layer;

[0172] Step S105: Bond the encapsulation adhesive layer and the dicing layer.

[0173] The following Figures 6 to 17 details the formation process of the composite film 100 according to the embodiment of the present application.

[0174] Refer to Figures 6 to 8 shown in the figure, and execute the above step S101.

[0175] Refer to Figure 6 shown in the figure, coat the encapsulation adhesive on the first release layer 42 to obtain an initial encapsulation adhesive layer 110 located on the first release layer 42.

[0176] Refer to Figure 7 and Figure 8 shown in the figure, cut the initial encapsulation adhesive layer 110 to obtain an encapsulation adhesive layer 11. The encapsulation adhesive layer 11 includes a bonding area 111 and a bonding alignment area 112. The bonding alignment area 112 is adjacent to the bonding area 111 and protrudes relative to the edge of the bonding area 111.

[0177] It should be noted that the components of the encapsulation adhesive layer 11 and the ratios of the components are as described above, and will not be elaborated here.

[0178] In some embodiments, the initial encapsulation adhesive layer 110 can be cut by a die-cutting process to obtain the encapsulation adhesive layer 11. In an exemplary embodiment, the initial encapsulation adhesive layer 110 is cut by a rotary knife, and the initial encapsulation adhesive layer 110 is cut into an outer ring part and the encapsulation adhesive layer 11. The outer ring part is disposed around the encapsulation adhesive layer 11. Then, the outer ring part is removed to obtain the encapsulation adhesive layer 11. It should be noted that during the cutting of the initial encapsulation adhesive layer 110, ensure that the first release layer 42 is not cut through.

[0179] In some embodiments, the die-cutting process can use at least one of a flat knife and a round knife. In an exemplary embodiment, the die-cutting process can use a round knife to reduce the difficulty of forming the encapsulation adhesive layer 11.

[0180] In some embodiments, refer to Figures 9 to 13 shown in the figure, before laminating the encapsulation adhesive layer and the dicing layer, the method further includes:

[0181] Step S102: Form a double-sided adhesive layer 31;

[0182] Step S103: Bond the double-sided adhesive layer 31 to the encapsulation adhesive layer 11. The double-sided adhesive layer 31 is disposed around the encapsulation adhesive layer 11, and there is a gap between the double-sided adhesive layer 31 and the bonding area 111. The bonding alignment area 112 is located in the gap and extends to overlap with the double-sided adhesive layer 31.

[0183] Refer to Figures 9 to 11 shown, and perform the above-mentioned step S102.

[0184] Refer to Figure 9 shown. Forming the double-sided adhesive layer 31 includes: providing a double-sided adhesive composite layer. The double-sided adhesive composite layer includes two second release layers 43 and an initial double-sided adhesive layer 30, and the initial double-sided adhesive layer 30 is located between the two second release layers 43.

[0185] Refer to Figure 10 and Figure 11 shown. Remove one second release layer 43, and use a die-cutting process to cut the initial double-sided adhesive layer 30 to obtain the double-sided adhesive layer 31, and the double-sided adhesive layer 31 is annular. In an exemplary embodiment, use a rotary knife to cut the initial double-sided adhesive layer 30, cut the initial double-sided adhesive layer 30 into a middle part and the double-sided adhesive layer 31, and the double-sided adhesive layer 31 is disposed around the middle part. Then, remove the middle part to obtain the double-sided adhesive layer 31. During the process of cutting the initial double-sided adhesive layer 30, ensure that the other second release layer 43 is not cut through.

[0186] In some embodiments, the die-cutting process can adopt at least one of a flat knife and a round knife. In an exemplary embodiment, the die-cutting process can adopt a round knife to reduce the difficulty of forming the double-sided adhesive layer 31.

[0187] In some embodiments, Figure 12 and Figure 13 shown, and perform the above-mentioned step S103.

[0188] In some embodiments, refer to Figure 12 shown. Bonding the double-sided adhesive layer 31 to the encapsulation adhesive layer 11 includes: bonding the double-sided adhesive layer 31 onto the encapsulation adhesive layer 11, and a part of the double-sided adhesive layer 31 overlaps with the bonding alignment area 112, and the part of the double-sided adhesive layer 31 that overlaps with the bonding alignment area 112 protrudes from other parts of the double-sided adhesive layer 31.

[0189] In some embodiments, refer to Figure 13 shown. Bonding the double-sided adhesive layer 31 to the encapsulation adhesive layer 11 includes: bonding the encapsulation adhesive layer 11 onto the double-sided adhesive layer 31, and a part of the double-sided adhesive layer 31 overlaps with the bonding alignment area 112, and the part of the bonding alignment area 112 that overlaps with the double-sided adhesive layer 31 protrudes from other parts of the bonding alignment area 112.

[0190] Refer to Figures 14 to 17As shown, the above steps S104 and S105 are executed.

[0191] In some embodiments, referring to Figure 14 and Figure 15 As shown, the above step S104, that is, forming the dicing layer 21, includes: providing a cutting tape 22; forming an antistatic adhesive layer 23 on the cutting tape 22.

[0192] In some embodiments, the antistatic adhesive layer 23 can be formed on the cutting tape 22 by processes such as coating.

[0193] The cutting tape 22 provides support for the cutting process of the wafer 51 to be cut. In some embodiments, the cutting tape 22 includes a thermoplastic polyurethane layer, but is not limited thereto.

[0194] In some embodiments, the thickness of the cutting tape 22 is 30 mm to 200 mm.

[0195] In some embodiments, the peeling force between the antistatic adhesive layer 23 and the iron frame 61 is less than the peeling force between the double-sided adhesive layer 31 and the iron frame 61. Thus, the risk of the double-sided adhesive layer 31 peeling off from the iron frame 61 is reduced.

[0196] In some embodiments, the antistatic adhesive layer 23 includes a pressure-sensitive adhesive layer and an antistatic material dispersed in the pressure-sensitive adhesive layer.

[0197] In some embodiments, the thickness of the pressure-sensitive adhesive layer is 5 mm to 50 mm.

[0198] In some embodiments, referring to Figure 12 , Figure 14 and Figure 16 As shown, the second release layer 43 below the double-sided adhesive layer 31 is removed, and the dicing layer 21 is bonded to the Figure 12 As shown double-sided adhesive layer 31 and the encapsulation adhesive layer 11 to obtain a composite film 100.

[0199] In some embodiments, referring to Figure 13 , Figure 15 and Figure 17 As shown, the second release layer 43 below the double-sided adhesive layer 31 is removed, and the dicing layer 21 is bonded to the Figure 13 As shown double-sided adhesive layer 31 and the encapsulation adhesive layer 11 to obtain a composite film 100.

[0200] It can be seen that for the method of forming the composite film 100 in the embodiments of the present application, the fitting accuracy requirement between the encapsulation adhesive layer 11 and the double-sided adhesive layer 31 is reduced, thereby simplifying the forming process of the composite film 100.

[0201] Referring to Figure 18 As shown, the embodiments of the present application further provide a packaging method for a semiconductor device, including:

[0202] Step S201: Provide the above composite film and the wafer to be cut;

[0203] Step S202: Bond the wafer to be cut to the bonding area according to the bonding alignment area;

[0204] Step S205: Cut the wafer to be cut and the encapsulation adhesive layer to obtain a plurality of encapsulated semiconductor devices. The encapsulated semiconductor devices include semiconductor devices and an encapsulation layer located on the semiconductor devices. The semiconductor devices are obtained by cutting the wafer to be cut, and the encapsulation layer is obtained by cutting the encapsulation adhesive layer 11.

[0205] For the encapsulation method of the semiconductor device according to the embodiment of the present application, in the bonding stage of the encapsulation adhesive layer, bonding the wafer to be cut to the bonding area based on the bonding alignment area of the encapsulation adhesive layer can improve the bonding accuracy and yield of the encapsulation adhesive layer. Moreover, after the encapsulation adhesive layer encapsulates the wafer to be cut, the wafer to be cut can also be cut, significantly improving the processing efficiency of the wafer.

[0206] Refer to Figure 19 As shown, perform the above step S201. Among them, the wafer 51 to be cut can be a 6-inch wafer, an 8-inch wafer, or a 12-inch wafer. The wafer 51 to be cut includes opposite front and back sides. The front side of the wafer 51 to be cut is provided with circuit elements such as device structures. The device structures include, but are not limited to, at least one of a memory device, a power device, and a sensor.

[0207] Continue to refer to Figure 19 As shown, perform the above step S202.

[0208] In step S202, an infrared light detection component 71 is used to detect the process of bonding the wafer 51 to be cut to the bonding area 111. The infrared light detection component 71 includes an infrared light emitter 72 and an infrared light receiver 73. The infrared light emitter 72 is located on the side of the scribing layer 21 away from the encapsulation adhesive layer 11. The infrared light receiver 73 is located on the side of the encapsulation adhesive layer 11 away from the scribing layer 21. The infrared light receiver 73 is used to receive the infrared light L1 emitted by the infrared light emitter 72. As described above, when the infrared light L1 passes through the encapsulation adhesive layer 11, there are two sudden changes in the transmittance, automatically confirming that the wafer 51 to be cut is bonded to the bonding area 111 of the encapsulation adhesive layer 11, improving the accuracy and yield of the bonding of the encapsulation adhesive layer 11 to the back side of the wafer 51 to be cut.

[0209] In step S202, the back side of the wafer 51 to be cut is bonded to the bonding area 111 of the encapsulation adhesive layer 11 to protect the back side of the wafer 51 to be cut.

[0210] After step S202, the method for packaging a semiconductor device further includes: step S203, that is, curing the encapsulation adhesive layer 11. The temperature for the curing treatment is 125°C to 135°C, and the time is 1 hour to 3 hours.

[0211] In some embodiments, referring to Figure 20 as shown, after step S203, the method for packaging a semiconductor device further includes: step S204, that is, using infrared light L2 to detect whether there are defects inside the diced wafer.

[0212] In some embodiments, using infrared light to detect whether there are defects inside the diced wafer includes:

[0213] Irradiating the wafer 51 to be diced with infrared light L2 emitted by an infrared light source 81 from the side of the dicing layer 21 facing away from the encapsulation adhesive layer 11;

[0214] Using an infrared imager 82 to receive the infrared light reflected by the wafer 51 to be diced, and judging whether there are defects inside the wafer 51 to be diced according to the image obtained from the reflected infrared light L2.

[0215] In some embodiments, the defects include cracks. If there are no cracks inside the wafer 51 to be diced, then continue to perform other subsequent steps.

[0216] In some embodiments, the infrared light L2 and the infrared light L1 can be the same or different.

[0217] In some embodiments, the method for packaging a semiconductor device further includes: printing an identification on the back of the wafer 51 to be diced. Among them, the identification can be printed on the back of the wafer 51 to be diced by laser.

[0218] After printing the identification on the back of the wafer 51 to be diced, the wafer 51 to be diced is diced, that is, the above-mentioned step S205 is executed, and a packaged semiconductor device is obtained, and then enter the sorting operation to screen the semiconductor devices attached with the encapsulation adhesive layer 11, that is, packaged semiconductor chips.

[0219] The performance of the encapsulation adhesive layer of the embodiments of the present application is verified below in combination with Examples 1 to 4 and Comparative Examples 1 to 2.

[0220] (1) The sources of the components of the encapsulation adhesive layer and the dicing layer in Table 1 are as follows:

[0221] Phenoxy resin: Hongchang Electronic Materials Co., Ltd., grade 017ME. The Mw of the phenoxy resin is 35000 g / mol.

[0222] Phenolic F-type epoxy resin: Shandong Deshang Chemical Co., Ltd., grades F44, F48, F51. The epoxy equivalent of the phenolic F-type epoxy resin is 220 g / eq to 240 g / eq.

[0223] Phenolic novolac epoxy resin: Shandong Pinshang New Materials Co., Ltd., grade NPPN-631. The epoxy equivalent of the phenolic novolac epoxy resin is 168 g / eq to 178 g / eq.

[0224] Bisphenol A-modified epoxy resin, Shenzhen Bominghan Electronics Co., Ltd., grade 187ME. The epoxy equivalent of the bisphenol A-modified epoxy resin is 180 g / eq to 190 g / eq.

[0225] Naphthol curing agent, Kenmet Materials Technology Co., Ltd., grade SN-395. The hydroxyl equivalent of the naphthol curing agent is 100 g / eq to 120 g / eq.

[0226] Triphenylphosphine, spherical silica, and carbon black are all commercially available. The D50 particle size of the spherical silica is 0.5 microns. The primary particle size of the carbon black is 20 nm.

[0227] The scribing layer is composed of a thermoplastic polyurethane layer and an antistatic adhesive layer. The antistatic adhesive layer is formed by coating on the thermoplastic polyurethane layer, and the thermoplastic polyurethane layer is purchased from Shanghai Hengning New Materials Co., Ltd.

[0228] (2)Thermal shrinkage rate test:

[0229] Sample preparation: Take one sample piece (area 10 cm * 10 cm) each of the scribing layer and the encapsulating adhesive layer. After peeling off the release film, lay them flat on a glass slide with the adhesive side up. Drill holes at the four corners of the sample, with the center of the hole 1 cm away from the edge and the hole diameter 0.5 cm * 0.5 cm.

[0230] Test method: After baking at 130 °C for 2 h, measure the dimensions of the sample before and after baking, and calculate the thermal shrinkage rate according to the formula. Thermal shrinkage rate = (distance before baking - distance after baking) / distance before baking * 100%.

[0231] (3)Transmittance test:

[0232] Test equipment: Transmittance measuring instrument

[0233] Sample preparation: Cut an initial sample piece with an area of approximately 400 mm × approximately 250 mm (including the scribing layer and the encapsulating adhesive layer on the scribing layer), and then heat and cure it at 130 °C for 2 hours to prepare the sample piece.

[0234] Test method: Place the initial sample wafer and the corresponding samples on a transmittance measuring instrument respectively. Measure the light transmittance in the wavelength range of 400 nm to 1100 nm, and take the maximum transmittance as the measured value.

[0235] (4) Image detection of the internal structure of the wafer to be cut:

[0236] Test equipment: MX63L Olympus machine

[0237] Sample preparation: Provide an initial sample wafer (including a scribing layer and an encapsulation adhesive layer located on the scribing layer), attach a chip on the encapsulation adhesive layer of the initial sample wafer, and then heat and cure at 130 °C for 2 hours to prepare the sample wafer.

[0238] Test method: Place the sample on the test equipment, irradiate the chip with infrared light with a wavelength of 900 nanometers, and obtain an image of the internal structure of the chip.

[0239] Table 1 Composition and test results of Examples 1 to 3 and Comparative Examples 1 to 3

[0240]

[0241] Combining Examples 1 to 4 and Comparative Examples 1 and 2, it can be seen that the compounding of phenolic F-type epoxy resin and bisphenol A-modified epoxy resin significantly reduces the difference in thermal shrinkage rate between the scribing layer and the encapsulation adhesive layer, thereby improving the light transmittance of the cured encapsulation adhesive layer and scribing layer to light with a wavelength of 400 nm to 1100 nm, especially the light transmittance to infrared light with a wavelength of 900 nanometers, and further improving the image clarity of observing the internal structure of the chip with infrared light.

[0242] And, combining Examples 1 to 2 and Example 4, it can be seen that within a certain range of the proportion of phenolic F-type epoxy resin and bisphenol A-modified epoxy resin, the laminate composed of the encapsulation adhesive layer and the scribing layer before curing has a greater light transmittance to light with a wavelength of 400 nm to 1100 nm. In addition, combining Examples 1 and 3, it can be seen that within a certain range of the mass percentage of carbon black, the laminate composed of the encapsulation adhesive layer and the scribing layer before curing has a greater light transmittance to light with a wavelength of 400 nm to 1100 nm.

[0243] The performance of the composite film of the embodiments of the present application is verified below in combination with specific Examples 5 to 6 and Comparative Examples 3 to 5.

[0244] The thickness requirements of the film layer and the material requirements of the double-sided tape in the composite films of Examples 5 to 6 and Comparative Examples 3 to 5 are shown in Table 2. The following tests are carried out on the examples and comparative examples:

[0245] ① Stick the double-sided adhesive layer of the composite film in Examples 5 to 6 and Comparative Examples 3 to 4, and the antistatic adhesive layer of the composite film in Comparative Example 5 on the iron frame with deep scratches, and observe whether the edges of the double-sided adhesive layer or the antistatic layer roll up and fall off from the iron frame;

[0246] ② After the film sticking is completed, place it at a temperature of 130 °C in an oven for 2 hours, and observe whether the edges of the double-sided adhesive layer or the antistatic layer roll up and fall off from the iron frame. The test results are shown in Table 3.

[0247] Among them, in Table 2 below, the release layer is purchased from Nan Ya Plastics; the encapsulating adhesive layer is designed with the components in Example 1. The cutting tape is commercially available, and the antistatic adhesive layer is formed by coating on the cutting tape. The double-sided adhesive layers of Examples 5, 6 and Comparative Examples 3 to 4 are purchased from Hongfujiu Double-sided Adhesive.

[0248] Table 2 Composition of the composite films in Examples 5 to 6 and Comparative Examples 3 to 5

[0249]

[0250] Table 3 Test results of the composite films in Examples 5 to 6 and Comparative Examples 3 to 5

[0251]

[0252] As can be seen from Table 2 and Table 3, in the composite film of the embodiments of the present application, the selection of the double-sided adhesive determines the workability of the composite film. Combining Examples 5 and 6 and Comparative Example 5, it can be seen that adding a double-sided adhesive film can improve the problem of the edge part of the iron frame falling off after operation. Combining Examples 5 and 6 and Comparative Examples 3 to 4, it can be seen that when the substrate layer of the double-sided adhesive exceeds a certain thickness or the substrate is ordinary PET, the double-sided adhesive is too hard, and the edge of the double-sided adhesive on the iron frame will fall off after heat curing. When the substrate layer of the double-sided adhesive uses a thinner and high-temperature low-shrinkage PET, it can operate normally and the double-sided adhesive layer will not fall off from the iron frame after the encapsulating adhesive layer is heat-cured.

[0253] The description of the above embodiments is only used to help understand the technical solution and its core idea of the present application; those of ordinary skill in the art should understand that: they can still modify the technical solutions recorded in the foregoing embodiments, or perform equivalent replacements on some of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. A composite film, characterized in that, Comprising: An encapsulation adhesive layer, including a bonding area and a bonding alignment area. The two bonding alignment areas are adjacent to the bonding area and protrude relative to the edge of the bonding area. The two bonding alignment areas are respectively located on the opposite sides in the radial direction of the bonding area; And A dicing layer, the encapsulation adhesive layer and the dicing layer are laminated, and the orthographic projection of the encapsulation adhesive layer on the dicing layer is located within the dicing layer.

2. The composite film according to claim 1, characterized in that, The shape of the bonding area is circular.

3. The composite film according to claim 1, characterized in that, The bonding alignment area includes an arc-shaped edge.

4. The composite film according to claim 1, characterized in that, The encapsulation adhesive layer includes a modified epoxy resin and a curing agent; the modified epoxy resin includes bisphenol A epoxy resin and phenolic F-type epoxy resin.

5. The composite film according to claim 4, wherein The mass percentage of the modified epoxy resin in the encapsulation adhesive layer is 13% - 22%; and / or, The mass ratio of bisphenol A epoxy resin to phenolic F-type epoxy resin is (10 - 14):(1 - 9); and / or, The epoxy equivalent of bisphenol A epoxy resin is 180 g / eq - 190 g / eq, and the epoxy equivalent of phenolic F-type epoxy resin is 220 g / eq - 240 g / eq.

6. The composite film according to claim 4 or 5, characterized in that, The encapsulation adhesive layer further includes a phenoxy resin, and the mass ratio of the phenoxy resin to the modified epoxy resin is (8 - 12):(13 - 22); and / or, The weight average molecular weight of the phenoxy resin is 30000 g / mol - 40000 g / mol; and / or, The mass ratio of the curing agent to the modified epoxy resin is (16 - 20):(13 - 22); and / or, The curing agent includes a naphthol-based curing agent; The encapsulation adhesive layer further includes a colorant, and the mass percentage of the colorant in the encapsulation adhesive layer is 0.05% - 0.25%; and / or, The colorant includes carbon black; and / or, The particle size of the colorant is 10 nanometers - 25 nanometers; and / or, The encapsulation adhesive layer further includes a curing accelerator, and the mass ratio of the curing agent to the curing accelerator is (16 - 20):1; and / or, The curing accelerator includes a phosphine-based curing accelerator; and / or, The encapsulation adhesive layer further includes a filler, and the mass percentage of the filler in the encapsulation adhesive layer is 48% - 55%; and / or, The particle size of the filler is 0.2 micrometers - 1 micrometer; and / or, The filler includes silica.

7. The composite film according to any one of claims 1 to 5, characterized in that, The thermal shrinkage rate of the encapsulation adhesive layer when heated at 125°C - 135°C for 1 hour - 3 hours is 0.1% - 0.3%; The maximum transmittance of the encapsulation adhesive layer to light with a wavelength of 400 nm - 1100 nm is greater than or equal to 20%; and / or, The maximum transmittance of the cured encapsulation adhesive layer to light with a wavelength of 400 nm - 1100 nm is greater than or equal to 17.5%. The process parameters for curing the encapsulation adhesive layer include: temperature 125°C - 135°C, heating for 1 hour - 3 hours.

8. The composite film according to claim 1, wherein The thermal shrinkage rate of the dicing layer when heated at 125°C - 135°C for 1 h - 3 h is less than the thermal shrinkage rate of the encapsulation adhesive layer when heated at 125°C - 135°C for 1 h - 3 h.

9. The composite film according to claim 1, characterized in that, The composite film further includes a double-sided adhesive layer, which is laminated with the scribing layer, disposed around the bonding area, having a gap between the double-sided adhesive layer and the edge of the bonding area, and the bonding alignment area is located in the gap.

10. The composite film according to claim 9, wherein, The maximum transmittance of light with a wavelength of 400 nm to 1100 nm passing through the laminate of the scribing layer and the encapsulation adhesive layer is greater than or equal to 20%; and / or, The maximum transmittance of light with a wavelength of 400 nm to 1100 nm passing through the laminate of the scribing layer and the cured encapsulation adhesive layer is greater than or equal to 17.5%. The process parameters for curing the encapsulation adhesive layer include: a temperature of 125°C to 135°C and heating for 1 hour to 3 hours; and / or, The bonding alignment area partially overlaps with the double-sided adhesive layer; and / or, The thickness of the double-sided adhesive layer is 20 μm to 80 μm; and / or, The thermal shrinkage rate of the scribing layer when heated at 125°C to 135°C for 1 h to 3 h is HS1, and the thermal shrinkage rate of the encapsulation adhesive layer when heated at 125°C to 135°C for 1 h to 3 h is HS2. The absolute value of the difference between HS2 and HS1 is less than 0.2%; and / or, The thermal shrinkage rate of the scribing layer when heated at 125°C to 135°C for 1 h to 3 h is 0.1% to 0.15%, and the thermal shrinkage rate of the encapsulation adhesive layer when heated at 125°C to 135°C for 1 h to 3 h is 0.1% to 0.3%; and / or, The scribing layer includes a cutting tape, and the cutting tape includes a thermoplastic polyurethane layer; and / or, The scribing layer further includes an antistatic adhesive layer, which is located between the cutting tape and the encapsulation adhesive layer.

11. A method for forming a composite film according to any one of claims 1 to 10, characterized in that, Comprising: Forming the encapsulation adhesive layer; Forming the scribing layer; Bonding the encapsulation adhesive layer and the scribing layer.

12. The method for forming the composite film according to claim 11, wherein Before laminating the encapsulation adhesive layer and the scribing layer, the method further includes: Forming a double-sided adhesive layer; Bonding the double-sided adhesive layer and the encapsulation adhesive layer. The double-sided adhesive layer is disposed around the encapsulation adhesive layer, having a gap between the double-sided adhesive layer and the bonding area, and the bonding alignment area is located in the gap and extends to overlap with the double-sided adhesive layer.

13. A packaging method for a semiconductor device, characterized in that, Comprising: Providing the composite film according to any one of claims 1 to 10 and a wafer to be cut; Bonding the wafer to be cut to the bonding area according to the bonding alignment area; Cutting the wafer to be cut and the encapsulation adhesive layer to obtain a plurality of encapsulated semiconductor devices. The encapsulated semiconductor devices include semiconductor devices and an encapsulation layer located on the semiconductor devices. The semiconductor devices are obtained by cutting the wafer to be cut, and the encapsulation layer is obtained by cutting the encapsulation adhesive layer.

Images