Signal generation structure

Abstract

The invention provides a signal generation structure which can be applied to the technical field of generation and processing of terahertz signals. The system comprises: an injection network for converting a received initial signal into a differential input signal; the harmonic oscillator is used for carrying out oscillation according to the frequency of the differential input signal and generating a harmonic signal of a target frequency band; the power amplification network is used for performing power amplification on the received harmonic signal to generate a target signal; the harmonic oscillator comprises a first transistor, a second transistor and a parallel connection unit, an emitting electrode or a source electrode of the first transistor and an emitting electrode or a source electrode of the second transistor are both connected to the parallel connection unit, and a collecting electrode or a drain electrode of the first transistor and a collecting electrode or a drain electrode of the second transistor are connected to a power amplification network. The parallel unit comprises a capacitor and a resistor which are connected in parallel.

Description

Technical Field

[0001] The present disclosure relates to the technical field of terahertz signal generation and processing, and more specifically, to a signal generation structure. Background Art

[0002] The terahertz (THz) frequency band is located between microwaves and infrared light. Due to its advantages such as shorter wavelength and higher frequency, it is now widely used in high-resolution imaging, ultra-high-speed wireless communications, precision spectral analysis, biomedical testing, etc. However, the development of high-performance terahertz signal sources is still in the development stage.

[0003] In the process of implementing the concept of the present disclosure, the inventors discovered that the terahertz signal source generated in the related art has at least the technical problems of narrow bandwidth, low flatness of output power, and high phase noise. Summary of the invention

[0004] In view of this, the present disclosure provides a signal generating structure.

[0005] One aspect of the present disclosure provides a signal generation structure, including:

[0006] An injection network is used to convert the received initial signal into a differential input signal; a harmonic oscillator is used to oscillate according to the frequency of the differential input signal to generate a harmonic signal of a target frequency band; a power amplifier network is used to power amplify the received harmonic signal to generate a target signal; wherein the harmonic oscillator includes: a first transistor, a second transistor and a parallel unit, the emitter or source of the first transistor and the emitter or source of the second transistor are both connected to the parallel unit, the collector or drain of the first transistor and the collector or drain of the second transistor are connected to the power amplifier network, and the parallel unit includes a capacitor and a resistor in parallel.

[0007] According to an embodiment of the present disclosure, the harmonic oscillator also includes: a first inductor and a second inductor, wherein the base or gate of the first transistor is connected to the first end of the first inductor, the second end of the first inductor is connected to the first end of the second inductor, and the second end of the second inductor is connected to the base or gate of the second transistor.

[0008] According to an embodiment of the present disclosure, the power amplification network includes: a plurality of parallel amplification units, each of which includes: a power divider for converting a received harmonic signal into a differential input signal; and a multi-stage amplifier for performing multi-stage amplification processing on the differential input signal to obtain an amplified signal.

[0009] According to an embodiment of the present disclosure, the power amplification network further includes: a power synthesizer, which is used to synthesize the amplified signals obtained by each amplification unit to obtain a target signal.

[0010] According to an embodiment of the present disclosure, the type of the power divider includes one of the following: a three-conductor balun power divider, a Wilkinson power divider.

[0011] According to an embodiment of the present disclosure, the type of the power combiner includes one of the following: a three-conductor balun power combiner, a transformer structure power combiner, and a Lange coupler structure power combiner.

[0012] According to an embodiment of the present disclosure, the structure of the injection network includes a Marchand balun structure.

[0013] According to an embodiment of the present disclosure, the target frequency band includes a terahertz frequency band.

[0014] According to an embodiment of the present disclosure, the type of the multi-stage amplifier includes a three-stage power amplifier.

[0015] According to an embodiment of the present disclosure, the first transistor and the second transistor are of the same type, and the type of the first transistor and the second transistor includes one of the following: NPN-type triode, metal oxide semi-conductor field effect transistor, gallium nitride high electron mobility transistor, indium phosphide high electron mobility transistor.

[0016] According to an embodiment of the present disclosure, the injection network converts the initial signal of the external input into a differential input signal and sends it to the harmonic oscillator. The differential input signal will frequency pull the harmonic oscillator and lock the harmonic oscillator at the frequency of the differential input signal for oscillation. The power amplifier network performs power amplification on the harmonic signal of the target frequency band generated by the harmonic oscillator to obtain the target signal. Since the emitter or source of the first transistor and the emitter or source of the second transistor in the harmonic oscillator are both connected to the capacitor and the resistor in parallel, the parallel structure is equivalent to a low-quality factor passive device, thereby reducing the quality factor of the harmonic oscillator, thereby improving the locked frequency range in the target frequency band, so that it is easier to achieve overdriving of the power amplifier network. At the same time, the collector or drain of the first transistor and the collector or drain of the second transistor are connected to the power amplifier network. The differential structure adopted makes the fundamental waves cancel each other, thereby achieving higher fundamental wave suppression performance. The structure is simple and occupies a small area, so a signal with high bandwidth and flattened gain can be obtained. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] The above and other objects, features and advantages of the present disclosure will become more apparent through the following description of the embodiments of the present disclosure with reference to the accompanying drawings, in which:

[0018] Figure 1 The schematic diagram of the architecture of a direct oscillation terahertz source is shown schematically.

[0019] Figure 2The schematic diagram of the architecture of a frequency-doubling terahertz source with an amplification-frequency-doubling chain structure is shown schematically.

[0020] Figure 3 The schematic diagram of the architecture of a frequency-doubling terahertz source with a frequency-doubling-amplification chain structure is shown schematically.

[0021] Figure 4 The schematic diagram of the architecture of a frequency-doubling terahertz source with an injection-locked frequency multiplier structure is shown schematically.

[0022] Figure 5 The schematic diagram schematically shows the architecture of the signal generation structure according to the embodiment of the present disclosure.

[0023] Figure 6 The diagram schematically shows a curve showing a change in the impedance phase of a resonant network with respect to frequency according to an embodiment of the present disclosure.

[0024] Figure 7a The schematic diagram shows the gain compression principle of the power amplifier network after overdriving.

[0025] Figure 7b The diagram schematically shows a curve showing a change in output power of a harmonic oscillator according to an embodiment of the present disclosure as a function of frequency.

[0026] Figure 7c The graph schematically shows a curve of the gain of an amplifier network according to an embodiment of the present disclosure varying with frequency.

[0027] Figure 7d The figure schematically shows a curve showing a change in target signal power over frequency according to an embodiment of the present disclosure.

[0028] Figure 8a The figure schematically shows the connection relationship between the first inductor, the first transistor and the parallel unit according to the embodiment of the present disclosure.

[0029] Figure 8b A partial equivalent circuit diagram of a harmonic oscillator is schematically shown.

[0030] Fig. 9 The circuit diagram of the signal generating structure according to the embodiment of the present disclosure is schematically shown. DETAILED DESCRIPTION

[0031] Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. However, it should be understood that these descriptions are exemplary only and are not intended to limit the scope of the present disclosure. In the following detailed description, for ease of explanation, many specific details are set forth to provide a comprehensive understanding of the embodiments of the present disclosure. However, it is apparent that one or more embodiments may also be implemented without these specific details. In addition, in the following description, descriptions of known structures and technologies are omitted to avoid unnecessary confusion of the concepts of the present disclosure.

[0032] The terms used herein are only for describing specific embodiments and are not intended to limit the present disclosure. The terms "comprise", "include", etc. used herein indicate the existence of features, steps, operations and / or components, but do not exclude the existence or addition of one or more other features, steps, operations or components.

[0033] All terms (including technical and scientific terms) used herein have the meanings commonly understood by those skilled in the art unless otherwise defined. It should be noted that the terms used herein should be interpreted as having a meaning consistent with the context of this specification and should not be interpreted in an idealized or overly rigid manner.

[0034] When using expressions such as "at least one of A, B, and C, etc.", they should generally be interpreted according to the meaning of the expression commonly understood by those skilled in the art (for example, "a system having at least one of A, B, and C" should include but is not limited to a system having A alone, B alone, C alone, A and B, A and C, B and C, and / or A, B, C, etc.).

[0035] Due to the high signal frequency and complex electromagnetic characteristics of the terahertz band, terahertz technology is still in the development stage. The performance of the terahertz source directly determines the key parameters of the application system, such as the range and resolution. Therefore, the development of high-performance terahertz sources is crucial to promote the practical application of terahertz technology.

[0036] The solid-state terahertz source in the related technology is usually composed of an oscillator, a frequency multiplier, a power amplifier and other devices, and is divided into two types: a direct oscillation type terahertz source and a frequency multiplication type terahertz source.

[0037] Figure 1 The schematic diagram of the architecture of a direct oscillation terahertz source is shown schematically.

[0038] like Figure 1 As shown, the embodiment 100 includes a voltage controlled oscillator (VCO) 110 and a power amplifier 120 , wherein the voltage controlled oscillator (VCO) 110 is internally composed of a negative resistance network 111 and a resonant network 112 .

[0039] Among them, the resonant frequency of the resonant network determines the output frequency of the oscillator, and the negative resistance network compensates for the loss caused by the resonant network. The two work together to generate a terahertz frequency signal, which is amplified by the power amplifier and output. In order to maintain high gain in the terahertz frequency band to maintain oscillation, active devices need to have a higher maximum oscillation frequency, and passive devices such as capacitors and inductors will deteriorate the phase noise performance of the output signal due to their low quality factor. At the same time, the tuning range of tuning devices in the terahertz frequency band, such as varactor diodes, will be limited, resulting in a narrow output signal bandwidth and poor flatness of the output signal power.

[0040] Figure 2 The schematic diagram of the architecture of a frequency-doubling terahertz source with an amplification-frequency-doubling chain structure is shown schematically.

[0041] like Figure 2 As shown, the low-frequency signal is first amplified by the power amplifier 210 and then multiplied to the terahertz frequency band by the frequency multiplier 220 for output.

[0042] Even if a terahertz signal exceeding the maximum oscillation frequency of the transistor can be generated, the frequency multiplier 220 will transmit the fundamental signal while generating the harmonic signal, resulting in poor harmonic suppression performance. At the same time, the output power of the frequency multiplier 210 is often limited and cannot reach the saturated output power of the active device.

[0043] To achieve higher output power and better harmonic suppression performance, the related technology also uses a frequency multiplication-amplification chain (MAC) structure.

[0044] Figure 3 The schematic diagram of the architecture of a frequency-doubling terahertz source with a frequency-doubling-amplification chain structure is shown schematically.

[0045] like Figure 3 As shown, the low-frequency signal is first multiplied by the frequency multiplier 310 to a frequency close to the terahertz frequency band, and then further enhanced by the power amplifier 320.

[0046] However, considering that the gain of active devices in the terahertz frequency band is low and the harmonic signal power output by the frequency multiplier is low, more amplifiers need to be cascaded to achieve higher power output, which will lead to lower system efficiency, increased power consumption, and increased design complexity. At the same time, the amplifier will also amplify the noise signal, so when the input signal power is low, the phase noise performance of the output signal will also deteriorate.

[0047] Figure 4 The schematic diagram of the architecture of a frequency-doubling terahertz source with an injection-locked frequency multiplier structure is shown schematically.

[0048] like Figure 4As shown, the structure includes an injection network 410 and an oscillator 420. The oscillator 420 and the above Figure 1 The VCO structure is similar to that in the embodiment, including a negative resistance network 421 and a resonant network 422. The injection network 410 injects an external current into the oscillator 420. If the frequency of the injected signal differs from the free oscillation frequency of the oscillator 420, and the difference is within a certain range, the injected signal produces a frequency pulling effect on the oscillator 420, so that the frequency of the oscillator 420 is locked to the frequency of the injected signal, and outputs the fundamental wave or harmonic of the oscillation signal to generate a terahertz signal.

[0049] However, under this structure, the locking range in the terahertz frequency band is often relatively narrow, resulting in limited bandwidth of the generated terahertz signal. At the same time, when the oscillator deviates from its free oscillation frequency, the output power decreases rapidly, thus affecting the gain flatness of the output signal.

[0050] In view of this, an embodiment of the present disclosure provides a signal generation structure, characterized by comprising:

[0051] An injection network is used to convert the received initial signal into a differential input signal; a harmonic oscillator is used to oscillate according to the frequency of the differential input signal to generate a harmonic signal of a target frequency band; a power amplifier network is used to power amplify the received harmonic signal to generate a target signal; wherein the harmonic oscillator includes: a first transistor, a second transistor and a parallel unit, the emitter or source of the first transistor and the emitter or source of the second transistor are both connected to the parallel unit, the collector or drain of the first transistor and the collector or drain of the second transistor are connected to the power amplifier network, and the parallel unit includes a capacitor and a resistor in parallel.

[0052] Figure 5 The schematic diagram of the architecture of the signal generation structure according to the embodiment of the present disclosure is shown schematically. It should be noted that: Figure 5 What is shown is merely an example of a system architecture to which the embodiments of the present disclosure can be applied, in order to help those skilled in the art understand the technical content of the present disclosure, but it does not mean that the embodiments of the present disclosure cannot be used in other devices, systems, environments or scenarios.

[0053] like Figure 5 As shown, the structure 500 includes an injection network 510 , a harmonic oscillator 520 and a power amplification network 530 , wherein the harmonic oscillator 520 includes a first transistor 521 , a second transistor 522 and a parallel unit 523 .

[0054] According to an embodiment of the present disclosure, the injection network 510 is used to convert the received single-ended initial signal from the outside into a differential input signal, while avoiding the interference of itself and the external circuit on the performance of the harmonic oscillator 520. The differential input signal will frequency pull the harmonic oscillator 520 and lock it to oscillate in the frequency range of the differential input signal, generating a harmonic signal of the target frequency band.

[0055] According to the embodiment of the present disclosure, since the differential mode point is ideally grounded, the DC power supply is fed in through the common mode point, thereby avoiding the parasitic effect of the grounding circuit in the terahertz frequency band from negatively affecting the overall performance of the harmonic oscillator 520. Therefore, compared with the cross-coupling structure, a higher oscillation frequency can be achieved, which is more suitable for applications in the terahertz frequency band.

[0056] According to an embodiment of the present disclosure, a capacitor C is connected to the emitter or source. E With resistor R E The parallel unit formed by parallel connection is equivalent to a passive device with a low quality factor, which effectively reduces the quality factor of the entire resonant network.

[0057] According to an embodiment of the present disclosure, the locking frequency range is determined by the oscillation current intensity of the harmonic oscillator 520, the current intensity of the differential input signal, and the resonant network impedance phase characteristic. When the oscillation current intensity and the current intensity of the differential input signal are fixed, the flatter the resonant network impedance phase is near the free oscillation frequency, the wider its locking range is.

[0058] Figure 6 The diagram schematically shows a curve showing a change in the impedance phase of a resonant network with respect to frequency according to an embodiment of the present disclosure.

[0059] like Figure 6 As shown, the horizontal axis is frequency and the vertical axis is the impedance phase of the resonant network.

[0060] By comparison, it can be seen that the signal generation structure of the present application with the addition of a parallel unit has a relatively flatter trend in the variation of the resonant network impedance phase with frequency than the terahertz wave source generation structure in the related art.

[0061] According to the embodiments of the present disclosure, the harmonic signal can overdrive the power amplifier network 530, and the power amplifier network 530 will produce a gain compression effect when overdriven, thereby achieving the technical effect of improving the overall gain flatness. The power amplifier network 530 can isolate the fundamental signal, so that the influence of the power amplifier network 530 on the oscillation frequency and output power of the harmonic oscillator 520 is minimized, and finally the target signal is saturated and output.

[0062] Figure 7a The schematic diagram shows the gain compression principle of the power amplifier network after overdriving.

[0063] like Figure 7a As shown in the figure, the horizontal axis is the power of the input power amplifier network, and the vertical axis is the power of the output power amplifier network. Overdriving can increase the signal amplitude of the input power amplifier network to a linear response area, so that the power amplifier network works in the saturation area. In the saturation area, the power output of the power amplifier network is usually maintained at a certain saturation value. At this time, the output power is no longer proportional to the input power, resulting in a gain compression effect.

[0064] In order to better reflect the technical effect that can be achieved by the signal generation structure of the embodiment of the present disclosure, the following will be Figure 7b~Figure 7d Provide detailed explanation.

[0065] Figure 7b The diagram schematically shows a curve showing a change in output power of a harmonic oscillator according to an embodiment of the present disclosure as a function of frequency.

[0066] like Figure 7b As shown, the horizontal axis is the frequency, the vertical axis on the left is the output power of the harmonic oscillator of the present application, and the vertical axis on the right is the output power of the oscillator in the related art.

[0067] By comparison, it can be seen that the locking range of the oscillator in the related art is narrow, resulting in a narrow bandwidth of the terahertz source finally generated, while the 3dB bandwidth of the present application is 272Ghz~294Ghz.

[0068] Figure 7c The graph schematically shows a curve of the gain of an amplifier network according to an embodiment of the present disclosure varying with frequency.

[0069] like Figure 7c As shown, the horizontal axis is frequency, the vertical axis is gain, the 3dB gain low frequency point is 267GHz, and the high frequency point is 307GHz.

[0070] Figure 7d The figure schematically shows a curve showing a change in target signal power over frequency according to an embodiment of the present disclosure.

[0071] like Figure 7d As shown, the horizontal axis is the frequency, the vertical axis is the power of the target signal source, and the 3dB power low frequency point extends to 261GHz. Figure 7b 272Ghz~294Ghz and Figure 7c The 267 GHz~307 GHz band achieves further broadbandization.

[0072] According to an embodiment of the present disclosure, the injection network converts the initial signal of the external input into a differential input signal and sends it to the harmonic oscillator. The differential input signal will frequency pull the harmonic oscillator and lock the harmonic oscillator at the frequency of the differential input signal for oscillation. The power amplifier network performs power amplification on the harmonic signal of the target frequency band generated by the harmonic oscillator to obtain the target signal. Since the emitter or source of the first transistor and the emitter or source of the second transistor in the harmonic oscillator are both connected to the capacitor and the resistor in parallel, the parallel structure is equivalent to a low-quality factor passive device, thereby reducing the quality factor of the harmonic oscillator, thereby improving the locked frequency range in the target frequency band, so that it is easier to achieve overdriving of the power amplifier network. At the same time, the collector or drain of the first transistor and the collector or drain of the second transistor are connected to the power amplifier network. The differential structure adopted makes the fundamental waves cancel each other, thereby achieving higher fundamental wave suppression performance. The structure is simple and occupies a small area, so a signal with high bandwidth and flattened gain can be obtained.

[0073] According to an embodiment of the present disclosure, the structure of the injection network includes a Marchand balun structure.

[0074] According to an embodiment of the present disclosure, when the injection network is difficult to effectively isolate the external driving circuit from the harmonic oscillator, it will cause the oscillation frequency to shift. Therefore, a Marchand balun structure can be used as an injection network connected to the emitter or source of the first transistor and the second transistor.

[0075] According to the embodiments of the present disclosure, the injection network of the Marchand balun structure makes the impedance from the transistor emitter to the input end appear as a large inductor connected in series, which can effectively isolate the impedance change and ensure the stable operation of the harmonic oscillator.

[0076] According to an embodiment of the present disclosure, the harmonic oscillator also includes: a first inductor and a second inductor, wherein the base or gate of the first transistor is connected to the first end of the first inductor, the second end of the first inductor is connected to the first end of the second inductor, and the second end of the second inductor is connected to the base or gate of the second transistor.

[0077] The following takes the NPN transistor in the SiGe BiCMOS process as the first transistor as an example. Figure 8a and Figure 8b The principle that the parallel-connected units reduce the quality factor of the entire harmonic oscillator 520 is explained.

[0078] Figure 8a The figure schematically shows the connection relationship between the first inductor, the first transistor and the parallel unit according to the embodiment of the present disclosure.

[0079] like Figure 8aAs shown, the base of the first transistor 521 is connected to the first end of the first inductor 810 , and the emitter is connected to the parallel unit 523 .

[0080] According to the embodiments of the present disclosure, the carriers inside the first transistor are transmitted between the emitter, the base and the collector. The base serves as the common terminal of the input and output. Most of the carriers injected by the emitter flow to the collector through the base. In this process, the current regulation effect of the base causes the connection relationship between the base and the external circuit to be similar to that of a negative resistance from the perspective of the equivalent circuit.

[0081] Figure 8b A partial equivalent circuit diagram of a harmonic oscillator is schematically shown.

[0082] like Figure 8b As shown, the partial circuit viewed from the base of the first transistor is equivalent to a negative resistor R e With equivalent capacitance C e series, therefore, the equivalent capacitance C e Together with the first inductor 810 , a resonant network is formed.

[0083] According to an embodiment of the present disclosure, the first transistor and the second transistor are of the same type, and the type of the first transistor and the second transistor includes one of the following: NPN transistor, metal oxide semi-field effect transistor, gallium nitride high electron mobility transistor, indium phosphide high electron mobility transistor.

[0084] According to the embodiments of the present disclosure, for terahertz signals in lower frequency bands such as 0.1THz~0.2THz, MOS tubes using CMOS process can also be used, and for application scenarios with higher power requirements, gallium nitride high electron mobility transistors (GaN HEMTs) can be used, and for application scenarios with higher frequencies, indium phosphide high electron mobility transistors (InP HEMTs) can be used.

[0085] According to an embodiment of the present disclosure, the target frequency band includes a terahertz frequency band.

[0086] According to an embodiment of the present disclosure, the target frequency band may also include other frequency bands besides the terahertz frequency band.

[0087] According to an embodiment of the present disclosure, the power amplification network includes: a plurality of parallel amplification units, each of which includes: a power divider for converting a received harmonic signal into a differential input signal; a multi-stage amplifier for performing multi-stage amplification processing on the differential input signal to obtain an amplified signal, and the type of the multi-stage amplifier includes a three-stage power amplifier.

[0088] According to an embodiment of the present disclosure, the type of the power divider includes one of the following: a three-conductor balun power divider, a Wilkinson power divider.

[0089] According to the embodiments of the present disclosure, since the harmonic signal output by the injection-locked frequency multiplier composed of the injection network and the harmonic oscillator has a high power itself, a multi-stage amplifier with only a small number of amplifier stages can enter an over-driven state, and the output power of the injection-locked frequency multiplier will drop sharply when the output signal is higher than the free oscillation frequency, but the reduction in output power for signals lower than the free oscillation frequency is relatively gentle. Therefore, when designing, the free oscillation frequency of the harmonic oscillator should be offset to the low frequency of the multi-stage amplifier frequency band, so that the low frequency point can be extended to a lower frequency while maintaining the high frequency point of the 3dB bandwidth of the overall circuit, thereby enhancing the flatness of the gain and output power and widening the frequency band. With the support of the high output power of the low-quality factor injection-locked frequency multiplier of the previous stage, the number of amplifier amplification stages and the number of synthesis paths of the amplification unit can be freely expanded according to demand.

[0090] According to an embodiment of the present disclosure, the power amplification network further includes: a power synthesizer, which is used to synthesize the amplified signals obtained by each amplification unit to obtain a target signal.

[0091] According to an embodiment of the present disclosure, the type of the power combiner includes one of the following: a three-conductor balun power combiner, a transformer structure power combiner, and a Lange coupler structure power combiner.

[0092] The following takes two amplification units and a three-stage power amplifier as an example. Fig. 9 The signal generation structure is further described.

[0093] Fig. 9 The circuit diagram of the signal generating structure according to the embodiment of the present disclosure is schematically shown.

[0094] like Fig. 9 As shown, the structure includes an injection network 510, a harmonic oscillator 520 and a power amplification network 530. The structure of the harmonic oscillator 520 has been described above and will not be repeated here. The power amplification network 530 includes a plurality of amplification units 531, each of which includes a cascaded power divider 531 (1) and a three-stage amplifier PA. The power synthesizer 532 synthesizes the signals amplified by the plurality of amplification units and outputs a target signal.

[0095] The circuit diagrams, simulation diagrams and block diagrams in the accompanying drawings illustrate the architecture, functions and operations that may be implemented according to the structures of various embodiments of the present disclosure. In this regard, each box in the circuit diagram and the block diagram may represent a part of a module. It should also be noted that each box in the block diagram, as well as the combination of boxes in the block diagram, may be implemented by a dedicated hardware-based system that performs a specified function or operation, or may be implemented by a combination of dedicated hardware and computer instructions. It will be appreciated by those skilled in the art that the features recorded in the various embodiments of the present disclosure may be combined and / or combined in a variety of ways, even if such combinations or combinations are not explicitly described in the present disclosure. In particular, without departing from the spirit and teachings of the present disclosure, the features recorded in the various embodiments of the present disclosure may be combined and / or combined in a variety of ways. All of these combinations and / or combinations fall within the scope of the present disclosure.

[0096] The embodiments of the present disclosure are described above. However, these embodiments are only for illustrative purposes and are not intended to limit the scope of the present disclosure. Although the embodiments are described above, this does not mean that the measures in the various embodiments cannot be used in combination to advantage. Without departing from the scope of the present disclosure, those skilled in the art may make a variety of substitutions and modifications, which should all fall within the scope of the present disclosure.

Claims

1. A signal generation structure, characterized in that: include: An injection network for converting the received initial signal into a differential input signal; A harmonic oscillator, used to oscillate according to the frequency of the differential input signal to generate a harmonic signal of a target frequency band; A power amplification network, used for amplifying the power of the received harmonic signal to generate a target signal; The harmonic oscillator includes: a first transistor, a second transistor and a parallel unit, the emitter or source of the first transistor and the emitter or source of the second transistor are both connected to the parallel unit, the collector or drain of the first transistor and the collector or drain of the second transistor are connected to the power amplification network, and the parallel unit includes a capacitor and a resistor in parallel.

2. The structure according to claim 1, characterized in that: The harmonic oscillator further comprises: A first inductor and a second inductor, wherein a base or a gate of the first transistor is connected to a first end of the first inductor, a second end of the first inductor is connected to a first end of the second inductor, and a second end of the second inductor is connected to a base or a gate of the second transistor.

3. The structure according to claim 1, characterized in that: The power amplification network comprises: A plurality of parallel-connected amplifying units, each of which comprises: A power divider, used for converting the received harmonic signal into a differential input signal; The multi-stage amplifier is used to perform multi-stage amplification processing on the differential input signal to obtain an amplified signal.

4. The structure according to claim 3, characterized in that The power amplification network also includes: A power synthesizer is used to synthesize the amplified signals obtained by each of the amplifying units to obtain the target signal.

5. The structure according to claim 4, characterized in that: The type of the power divider includes one of the following: a three-conductor balun power divider and a Wilkinson power divider.

6. The structure according to claim 4, characterized in that The type of the power combiner includes one of the following: a three-conductor balun power combiner, a transformer structure power combiner, and a Lange coupler structure power combiner.

7. The structure according to claim 1, characterized in that The structure of the injection network includes a Marchand balun structure.

8. The structure according to claim 1, characterized in that The target frequency band includes a terahertz frequency band.

9. The structure according to claim 3, characterized in that: The type of multi-stage amplifier includes a three-stage power amplifier.

10. The structure according to claim 1, characterized in that The first transistor and the second transistor are of the same type, and the type of the first transistor and the second transistor includes one of the following: NPN transistor, metal oxide semi-conductor field effect transistor, gallium nitride high electron mobility transistor, indium phosphide high electron mobility transistor.

Images