Substrate standby unit, substrate processing system, and substrate processing method

Abstract

The invention provides a substrate standby part, a substrate processing system and a substrate processing method, which can improve production capacity. A substrate standby unit waits for a substrate on which a first liquid film is adhered on the upper surface and the lower surface, the substrate standby unit comprising: a processing liquid supply unit that supplies a processing liquid to the upper surface of the substrate; a mass measurement unit that measures the mass of the substrate; a first imaging unit that acquires an upper surface image, which is an image of the upper surface of the substrate; and a control unit that performs control to form a second liquid film by causing the processing liquid supply unit to supply a first amount of the processing liquid to the upper surface of the substrate; a mass calculation unit that calculates the mass of the second liquid film on the basis of the mass of the substrate measured by the mass measurement unit; causing the first imaging unit to acquire the upper surface image; and determining the state of the second liquid film on the basis of the upper surface image when the quality of the second liquid film is equal to or greater than a first threshold value.

Description

Technical Field

[0001] The present disclosure relates to a substrate standby unit, a substrate processing system and a substrate processing method. Background Art

[0002] A substrate processing system having a batch processing unit, a single-wafer processing unit, and an interface unit is known (for example, see Patent Document 1). The interface unit transfers a substrate from the batch processing unit to the single-wafer processing unit. The interface unit has: a pure water supply unit that forms a pure water liquid film on the upper surface of the substrate; and a load sensor that measures the mass of the liquid film formed on the upper surface of the substrate.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Publication No. 2023-129235 Summary of the invention

[0006] Problem that the invention aims to solve

[0007] The present disclosure provides a technology capable of detecting a defect in a coating process with high accuracy.

[0008] Solutions for solving problems

[0009] A substrate standby unit in one embodiment of the present invention allows a substrate having a first liquid film attached to its upper and lower surfaces to wait, and the substrate standby unit comprises: a processing liquid supply unit, which supplies processing liquid to the upper surface of the substrate; a mass measuring unit, which measures the mass of the substrate; a first camera unit, which acquires an image of the upper surface of the substrate, i.e., an upper surface image; and a control unit, wherein the control unit performs the following controls: causing the processing liquid supply unit to supply a first amount of the processing liquid to the upper surface of the substrate to form a second liquid film; calculating the mass of the second liquid film based on the mass of the substrate measured by the mass measuring unit; causing the first camera unit to acquire the upper surface image; and determining the state of the second liquid film based on the upper surface image when the mass of the second liquid film is greater than a first threshold.

[0010] Effects of the Invention

[0011] According to the present disclosure, a coating process defect can be detected with high accuracy. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 It is a top view showing a substrate processing system according to an embodiment.

[0013] Figure 2 1 is a side view showing the second transfer station.

[0014] Figure 3 It is a top view showing an example of a mounting table.

[0015] Figure 4 It is a top view showing another example of the mounting table.

[0016] Figure 5 is a top view showing the arrangement of pins.

[0017] Figure 6 1 is a flowchart showing a substrate processing method according to an embodiment.

[0018] Figure 7 This is a flowchart showing a first example of the operation of the second transfer station.

[0019] Figure 8 FIG. 1 is a diagram showing a first example of the operation of the second transfer station.

[0020] Fig. 9 FIG. 2 is a diagram showing a first example of the operation of the second transfer station.

[0021] Fig.10 FIG. 3 is a diagram showing a first example of the operation of the second transfer station.

[0022] Fig.11 FIG. 4 is a diagram showing a first example of the operation of the second transfer station.

[0023] Fig.12 FIG. 5 is a diagram showing a first example of the operation of the second transfer station.

[0024] Fig.13 FIG. 6 is a diagram showing a first example of the operation of the second transfer station.

[0025] Fig.14 FIG. 7 is a diagram showing a first example of the operation of the second transfer station.

[0026] Fig.15 This is a flowchart showing a second example of the operation of the second transfer station.

[0027] Fig.16 FIG. 1 is a diagram showing a second example of the operation of the second transfer station.

[0028] Fig.17 FIG. 2 is a diagram showing a second example of the operation of the second transfer station.

[0029] Fig.18 FIG. 3 is a diagram showing a second example of the operation of the second transfer station.

[0030] Fig.19 FIG. 4 is a diagram showing a second example of the operation of the second transfer station.

[0031] Fig. 20 FIG. 5 is a diagram showing a second example of the operation of the second transfer station.

[0032] Fig.21 FIG. 6 is a diagram showing a second example of the operation of the second transfer station.

[0033] Fig. 22 FIG. 7 is a diagram showing a second example of the operation of the second transfer station.

[0034] Fig.23 This is a flowchart showing a third example of the operation of the second transfer station.

[0035] Fig.24 FIG. 1 is a diagram showing a third example of the operation of the second transfer station.

[0036] Fig.25 FIG. 2 is a diagram showing a third example of the operation of the second transfer station.

[0037] Fig.26 FIG. 3 is a diagram showing a third example of the operation of the second transfer station.

[0038] Fig. 27 FIG. 4 is a diagram showing a third example of the operation of the second transfer station.

[0039] Fig.28 FIG. 5 is a diagram showing a third example of the operation of the second transfer station.

[0040] Fig.29 FIG. 6 is a diagram showing a third example of the operation of the second transfer station. DETAILED DESCRIPTION

[0041] Hereinafter, non-limiting exemplary embodiments of the present disclosure will be described with reference to the accompanying drawings. In all the accompanying drawings, the same or corresponding components or parts are marked with the same or corresponding reference numerals, and repeated descriptions are omitted.

[0042] 〔Substrate processing system〕

[0043] Reference Figure 1 A substrate processing system 1 according to the embodiment will be described. Figure 1 It is a top view showing the substrate processing system 1 according to the embodiment.

[0044] like Figure 1 As shown, the substrate processing system 1 includes a loading and unloading unit 2 , a first interface unit 3 , a batch processing unit 4 , a second interface unit 5 , a single wafer processing unit 6 , and a control device 9 .

[0045] The loading and unloading section 2 serves as both a loading section and an unloading section. Therefore, the substrate processing system 1 can be miniaturized. The loading and unloading section 2 includes a load port 21 , a stocker 22 , a loader 23 , and a cassette transport device 24 .

[0046] The loading port 21 is arranged on the negative side of the loading and unloading section 2 in the X-axis direction. A plurality of loading ports 21 (for example, four) are arranged along the Y-axis direction. However, there is no particular limitation on the number of loading ports 21. A box C is placed on the loading port 21. The box C is used to accommodate a plurality of (for example, 25) substrates W, which are loaded and unloaded relative to the loading port 21. Inside the box C, the substrates W are held horizontally, and in the vertical direction, the substrates W are held at a second pitch P2 (P2 = N × P1) which is N times the first pitch P1. N is a natural number greater than 2, and is 2 in the present embodiment, but may also be greater than 3.

[0047] A plurality of (e.g., four) storage devices 22 are arranged along the Y-axis direction at the center of the loading / unloading section 2 in the X-axis direction. A plurality of (e.g., two) storage devices 22 are arranged adjacent to the first interface section 3 along the Y-axis direction at the positive side of the loading / unloading section 2 in the X-axis direction. The storage devices 22 may also be arranged in multiple layers in the vertical direction. The storage devices 22 are used to temporarily store the cassettes C containing the substrates W before cleaning, the cassettes C that are empty after the substrates W are taken out, and the like. There is no particular limitation on the number of storage devices 22.

[0048] The loader 23 is adjacent to the first interface unit 3 and is arranged at a position on the positive side of the loading and unloading unit 2 in the X-axis direction. The loader 23 is loaded with the cassette C. The loader 23 is provided with a cover opening and closing mechanism (not shown) for opening and closing the cover of the cassette C. A plurality of loaders 23 may be provided. The loaders 23 may also be arranged in multiple layers in the vertical direction.

[0049] The cassette transport device 24 transports the cassette C between the load port 21, the stocker 22, and the loader 23. The cassette transport device 24 is, for example, a multi-joint transport robot.

[0050] The first interface 3 is disposed on the positive side of the loading / unloading section 2 in the X-axis direction. The first interface 3 transfers substrates W between the loading / unloading section 2, the batch processing section 4, and the single wafer processing section 6. The first interface 3 includes a substrate transfer device 31, a substrate group forming section 32, and a first transfer stage 33.

[0051] The substrate transfer device 31 transfers the substrate W between the cassette C placed on the loader 23, the substrate group forming portion 32, and the first transfer station 33. The substrate transfer device 31 is composed of a multi-axis (e.g., six-axis) arm robot, and has a substrate holding arm 31a at its front end. The substrate holding arm 31a has a plurality of holding claws (not shown) that can hold a plurality of (e.g., 25) substrates W. The substrate holding arm 31a can take any position and posture in a three-dimensional space while holding the substrate W with the holding claws.

[0052] The substrate group forming section 32 is disposed on the positive side in the X-axis direction of the first interface section 3. The substrate group forming section 32 forms a substrate group L by holding a plurality of substrates W at a first pitch P1.

[0053] The first transfer station 33 is adjacent to the wafer processing unit 6 and is disposed on the positive side of the first interface unit 3 in the Y-axis direction. The first transfer station 33 receives the substrate W from the fourth transfer device 61 and temporarily stores the substrate W before transferring the substrate W to the loading / unloading unit 2.

[0054] The batch processing unit 4 is arranged on the positive side of the first interface unit 3 in the X-axis direction. The loading and unloading unit 2, the first interface unit 3 and the batch processing unit 4 are arranged in the order of the loading and unloading unit 2, the first interface unit 3 and the batch processing unit 4 from the negative side in the X-axis direction to the positive side in the X-axis direction. The batch processing unit 4 uniformly processes a substrate group L containing a plurality of (e.g., 50 or 100) substrates W at a first pitch P1. One substrate group L is composed of, for example, substrates W of M boxes C. M is a natural number greater than 2. M may be a natural number the same as N or a natural number different from N. The batch processing unit 4 has a liquid tank 41, a rinse tank 42, a first conveying device 43, a processing tool 44 and a driving device 45.

[0055] The chemical tank 41 and the rinse tank 42 are arranged along the X-axis direction. For example, the chemical tank 41 and the rinse tank 42 are arranged in the order of the chemical tank 41 and the rinse tank 42 from the positive side of the X-axis direction to the negative side of the X-axis direction. The chemical tank 41 and the rinse tank 42 are also collectively referred to as a processing tank. The number of chemical tanks 41 and the rinse tank 42 is not limited to Figure 1 For example, the drug tank 41 and the rinse tank 42 are Figure 1 It can be one group, but it can also be multiple groups.

[0056] The chemical tank 41 is used to store chemical solutions, and the substrate group L is immersed in the chemical solutions. The chemical solution is, for example, an aqueous phosphoric acid solution (H3PO4). The aqueous phosphoric acid solution selectively etches the silicon oxide film and the silicon nitride film to remove them. The chemical solution is not limited to an aqueous phosphoric acid solution. For example, it may be DHF (dilute hydrofluoric acid), BHF (a mixture of hydrofluoric acid and ammonium fluoride), dilute sulfuric acid, SPM (a mixture of sulfuric acid, hydrogen peroxide and water), SC1 (a mixture of ammonia, hydrogen peroxide and water), SC2 (a mixture of hydrochloric acid, hydrogen peroxide and water), TMAH (a mixture of tetramethylammonium hydroxide and water), a plating solution, etc. The chemical solution may be a chemical solution for stripping treatment or plating treatment. There is no particular limitation on the number of chemical solutions, and it may be multiple.

[0057] The rinse liquid tank 42 is used to store a first rinse liquid in which the substrate group L is immersed. The first rinse liquid is pure water for removing the chemical solution from the substrate W, for example, DIW (deionized water).

[0058] The first conveying device 43 includes a guide rail 43a and a first conveying arm 43b. The guide rail 43a is arranged at a position closer to the negative side of the Y-axis direction than the processing tank. The guide rail 43a extends from the first interface part 3 to the batch processing part 4 in the horizontal direction (X-axis direction). The first conveying arm 43b moves in the horizontal direction (X-axis direction) along the guide rail 43a. The first conveying arm 43b can also move in the vertical direction and can also rotate around the vertical axis. The first conveying arm 43b uniformly conveys the substrate group L between the first interface part 3 and the batch processing part 4.

[0059] The processing tool 44 receives and holds the substrate group L from the first transfer arm 43b. The processing tool 44 holds the plurality of substrates W at a first pitch P1 in the Y-axis direction and holds the plurality of substrates W vertically.

[0060] The driving device 45 moves the treatment tool 44 in the X-axis direction and the Z-axis direction. The treatment tool 44 immerses the substrate group L in the chemical solution stored in the chemical solution tank 41, then immerses the substrate group L in the first rinse solution stored in the rinse solution tank 42, and then transfers the substrate group L to the first conveying device 43.

[0061] The number of units of the treatment tool 44 and the driving device 45 is one in this embodiment, but may be more than one. In the latter case, one unit immerses the substrate group L in the drug solution stored in the drug solution tank 41, and the other unit immerses the substrate group L in the first rinse solution stored in the rinse solution tank 42. In this case, the driving device 45 only needs to move the treatment tool 44 in the Z-axis direction, and does not need to move the treatment tool 44 in the X-axis direction.

[0062] The second interface 5 is disposed on the positive side in the Y-axis direction of the batch processing unit 4. The second interface 5 transfers the substrate W between the batch processing unit 4 and the single wafer processing unit 6. The second interface 5 includes a dipping tank 51, a second transfer device 52, a third transfer device 53, and a second transfer station 54.

[0063] The immersion tank 51 is arranged outside the moving range of the first conveying arm 43b. For example, the immersion tank 51 is arranged at a position offset to the positive side in the Y-axis direction relative to the processing tank. The immersion tank 51 is used to store the second rinsing liquid, and the substrate group L is immersed in the second rinsing liquid. The second rinsing liquid is, for example, DIW (deionized water). The substrate W is held in the second rinsing liquid before being lifted from the second rinsing liquid by the third conveying device 53. Since the substrate W is present below the liquid surface of the second rinsing liquid, the surface tension of the second rinsing liquid does not act on the substrate W, which can prevent the concave-convex pattern of the substrate W from collapsing.

[0064] The second transfer device 52 includes a Y-axis driving device 52a, a Z-axis driving device 52b, and a second transfer arm 52c.

[0065] The Y-axis drive device 52a is disposed at a position on the positive side of the second interface portion 5 in the X-axis direction. The Y-axis drive device 52a extends from the second interface portion 5 to the batch processing portion 4 in the horizontal direction (Y-axis direction). The Y-axis drive device 52a moves the Z-axis drive device 52b and the second transfer arm 52c in the Y-axis direction. The Y-axis drive device 52a may include a ball screw.

[0066] The Z-axis driving device 52b is movably mounted on the Y-axis driving device 52a. The Z-axis driving device 52b moves the second transfer arm 52c in the Z-axis direction. The Z-axis driving device 52b may include a ball screw.

[0067] The second transport arm 52c is movably mounted on the Z-axis drive device 52b. The second transport arm 52c receives and holds the substrate group L from the first transport arm 43b. The second transport arm 52c holds a plurality of substrates W at a first pitch P1 in the Y-axis direction, and holds the plurality of substrates W in the vertical direction. The second transport arm 52c moves in the Y-axis direction and the Z-axis direction through the Y-axis drive device 52a and the Z-axis drive device 52b. The second transport arm 52c is configured to be movable between a plurality of positions including a handover position, an immersion position, and a standby position.

[0068] The delivery position is a position where the first transfer arm 43b and the second transfer arm 52c deliver the substrate group L. The delivery position is a position on the negative side in the Y-axis direction and the positive side in the Z-axis direction.

[0069] The immersion position is a position where the substrate group L is immersed in the immersion tank 51. The immersion position is a position on the positive side in the Y-axis direction and on the negative side in the Z-axis direction relative to the handover position.

[0070] The standby position is a position for the second conveying arm 52c to wait when the substrate group L is not handed over and the substrate group L is immersed in the dipping tank 51. The standby position is located directly below the handover position (negative side in the Z-axis direction) and is a position that does not hinder the movement of the first conveying arm 43b. In this case, the second conveying arm 52c can be moved to the handover position only by moving upward (positive side in the Z-axis direction), so the production capacity is improved. The standby position can also be the same position as the dipping position. In this case, it is possible to prevent particles that may be generated as the first conveying device 43 moves from adhering to the second conveying arm 52c. The standby position can also be a position directly above the dipping position (positive side in the Z-axis direction). In this way, by setting the standby position at a position different from the handover position, it is possible to prevent the first conveying arm 43b from contacting the second conveying arm 52c.

[0071] While the first transfer device 43 is operating, the second transfer device 52 moves the second transfer arm 52c to the impregnation position or the standby position. This prevents the first transfer arm 43b from contacting the second transfer arm 52c.

[0072] The third transport device 53 is composed of a multi-axis (e.g., six-axis) arm robot, and has a third transport arm 53a at its front end. The third transport arm 53a has a holding claw (not shown) that can hold a substrate W. The third transport arm 53a can take any position and posture in a three-dimensional space while holding the substrate W with the holding claw. The third transport device 53 transports the substrate W between the second transfer station 54 and the second transport arm 52c in the immersion position. At this time, since the immersion tank 51 is arranged outside the moving range of the first transport arm 43b, the first transport arm 43b and the third transport arm 53a do not interfere with each other. As a result, one of the first transport device 43 and the third transport device 53 can be operated independently regardless of the operating state of the other. Therefore, the first transport device 43 and the third transport device 53 can be operated at any timing, so the time required to transport the substrate W can be shortened. As a result, the productivity of the substrate processing system 1 is improved.

[0073] The second transfer station 54 is adjacent to the single-chip processing unit 6 and is arranged at a position close to the negative side of the second interface unit 5 in the X-axis direction. The second transfer station 54 receives the substrate W from the third conveying device 53 and temporarily stores the substrate W before transferring the substrate W to the single-chip processing unit 6. The substrate W taken out from the immersion tank 51 is placed on the second transfer station 54. Preferably, the substrate W placed on the second transfer station 54 is in a state where the surface is wetted by the second rinse liquid, for example. In this case, the surface tension of the second rinse liquid will not act on the substrate W, and the concave-convex pattern of the substrate W can be suppressed from collapsing. The number of the second transfer stations 54 can be one or more. The details of the second transfer station 54 will be described later.

[0074] The single-wafer processing section 6 is arranged on the negative side of the second interface section 5 in the X-axis direction and on the positive side of the Y-axis direction of the loading / unloading section 2, the first interface section 3, and the batch processing section 4. The single-wafer processing section 6 processes the substrates W one by one. The single-wafer processing section 6 includes a fourth conveying device 61, a liquid processing device 62, and a drying device 63.

[0075] The fourth transport device 61 includes a guide rail 61a and a fourth transport arm 61b. The guide rail 61a is arranged at a position close to the negative side of the single-wafer processing unit 6 in the Y-axis direction. The guide rail 61a extends in the horizontal direction (X-axis direction) in the single-wafer processing unit 6. The fourth transport arm 61b moves in the horizontal direction (X-axis direction) and the vertical direction along the guide rail 61a, and rotates around the vertical axis. The fourth transport arm 61b transports the substrate W between the second transfer station 54, the liquid processing device 62, the drying device 63 and the first transfer station 33. The number of the fourth transport arm 61b can be one or more. In the latter case, the fourth transport device 61 transports a plurality of (for example, five) substrates W in a unified manner.

[0076] The liquid processing device 62 is arranged at a position close to the positive side of the X-axis direction and the positive side of the Y-axis direction of the single-chip processing unit 6. The liquid processing device 62 is a single-chip type, and processes the substrates W one by one using the processing liquid. The liquid processing device 62 is arranged in multiple layers (for example, three layers) in the vertical direction (Z-axis direction). Thus, multiple substrates W can be processed simultaneously using the processing liquid. The processing liquid can be of multiple types, for example, pure water such as DIW and a dry liquid with a lower surface tension than pure water. The dry liquid can be, for example, an alcohol such as IPA (isopropyl alcohol).

[0077] The drying device 63 is arranged adjacent to the negative side of the liquid processing device 62 in the X-axis direction. In this case, the end face of the single-chip processing unit 6 on the positive side in the Y-axis direction can be arranged to be flush or approximately flush with the end face of the second interface unit 5 on the positive side in the Y-axis direction. Therefore, almost no useless space is generated, so the occupied area of ​​the substrate processing system 1 can be reduced. In contrast, when the drying device 63 is arranged adjacent to the positive side in the Y-axis direction of the liquid processing device 62, the end face of the single-chip processing unit 6 on the positive side in the Y-axis direction protrudes more than the end face of the second interface unit 5 on the positive side in the Y-axis direction, which may generate useless space. The drying device 63 is a single-chip type, and uses a supercritical fluid to dry the substrates W one by one. The drying device 63 is arranged in multiple layers (for example, three layers) in the vertical direction. Thus, multiple substrates W can be dried at the same time.

[0078] Alternatively, both the liquid processing device 62 and the drying device 63 may not be monolithic, or the liquid processing device 62 may be monolithic and the drying device 63 may be batch-type. The drying device 63 may also use a supercritical fluid to uniformly dry a plurality of substrates W. The number of substrates W uniformly processed in the drying device 63 may be greater than the number of substrates W uniformly processed in the liquid processing device 62, but may also be less. Devices other than the liquid processing device 62 and the drying device 63 may also be arranged in the monolithic processing unit 6.

[0079] The control device 9 is, for example, a computer, and includes a CPU (Central Processing Unit) 91 and a recording medium 92 such as a memory. The recording medium 92 stores a program for controlling various processes performed in the substrate processing system 1. The control device 9 controls the operation of the substrate processing system 1 by causing the CPU 91 to execute the program stored in the recording medium 92. The control device 9 includes an input interface 93 and an output interface 94. The control device 9 receives a signal from the outside through the input interface 93, and sends a signal to the outside through the output interface 94.

[0080] The above-mentioned program is stored in a computer-readable recording medium, for example, and is installed from the recording medium to the recording medium 92 of the control device 9. As a computer-readable recording medium, for example, a hard disk (HD), a floppy disk (FD), a compact disk (CD), a magneto-optical disk (MO), a memory card, etc. can be cited. In addition, the program can also be downloaded from a server via the Internet and installed in the recording medium 92 of the control device 9. The control device 9 is an example of a control unit, and functions as a part of the substrate standby unit.

[0081] In the substrate processing system 1 , the substrate W is transferred from the loading / unloading section 2 to the first interface section 3 , the batch processing section 4 , the second interface section 5 , and the single wafer processing section 6 in this order, and is then returned to the loading / unloading section 2 .

[0082] [Details of the structure of the second transfer station]

[0083] Reference Figures 2 to 5 The structure of the second transfer station 54 will be described in detail. Figure 2 1 is a side view showing the second delivery station 54 . Figure 3 It is a plan view showing an example of the mounting table 111 . Figure 4 It is a plan view showing another example of the mounting table 111 . Figure 5 1 is a plan view showing the arrangement of the pin 115 .

[0084] like Figure 2 As shown, the second transfer stage 54 includes a substrate holding portion 110 , a pure water supply portion 120 , a first imaging portion 131 , and a second imaging portion 132 .

[0085] The substrate holding unit 110 includes a mounting table 111 , a suction channel 112 , an ejector 113 , a pin supporting member 114 , a plurality of pins 115 , a load sensor 116 , an arm 117 , and a driving source 118 .

[0086] The mounting table 111 has a disk-like shape. The mounting table 111 holds the substrate W horizontally. Figure 3 As shown, the stage 111 has a plurality of suction holes 111h. The plurality of suction holes 111h are used to remove the first liquid film LF1 attached to the lower surface of the substrate W by suction. The plurality of suction holes 111h are used to adsorb the substrate W. Each suction hole 111h is configured to be connected to a suction channel 112, for example, and the suction force can be adjusted uniformly. Each suction hole 111h can also be configured to be connected to different suction channels 112 and the suction force can be adjusted individually. In this case, it is easy to adsorb a substrate W with warpage. For example, in the case of a substrate W with warpage that is convex, it is easy to adsorb the substrate W by starting suction from the outer periphery of the stage 111 toward the center. For example, in the case of a substrate W with warpage that is convex, it is easy to adsorb the substrate W by starting suction from the center of the stage 111 toward the outer periphery. The plurality of suction holes 111h can be arranged in a concentric circle or in a radial shape. The number and arrangement of the plurality of suction holes 111h are not limited to Figure 3 Example shown.

[0087] like Figure 4 As shown, the mounting table 111 may also have a plurality of grooves 111a arranged in a concentric circle. Each suction hole 111h is formed on the bottom surface of any groove among the plurality of grooves 111a. Each suction hole 111h is connected to any groove among the plurality of grooves 111a at the upper end. The mounting table 111 has a plurality of grooves 111a, thereby making it easy to uniformly suction the substrate W.

[0088] The suction flow path 112 allows the plurality of suction holes 111h to communicate with the ejector 113. The suction flow path 112 functions as a part of the suction mechanism.

[0089] The ejector 113 sucks the first liquid film LF1 attached to the lower surface of the substrate W through the plurality of suction holes 111h and the suction channel 112, and adsorbs the substrate W onto the mounting table 111. The ejector 113 functions as a part of the suction mechanism.

[0090] The pin support member 114 is provided below the mounting table 111 . The pin support member 114 has a disk-like shape and supports a plurality of pins 115 .

[0091] A plurality of pins 115 are provided on the pin support member 114. Figure 3 As shown in FIG. 1 , the number of the pins 115 is three. The number of the pins 115 may be four or more. The plurality of pins 115 supports the substrate W from below the substrate W above the pin support member 114 .

[0092] The load sensor 116 is provided at the tip of the arm 117. The pin support member 114 is provided on the load sensor 116. The load sensor 116 measures the mass including the pin support member 114, the pins 115, and the substrate W. The load sensor 116 is an example of a mass measuring unit.

[0093] The arm 117 supports the load sensor 116 .

[0094] The driving source 118 moves the arm 117 up and down. As a result, the arm 117, the load cell 116, the pin support member 114, the pin 115, and the substrate W are moved up and down relative to the mounting table 111. The driving source 118 may include a stepping motor.

[0095] The pure water supply unit 120 includes a nozzle 121, a pure water supply line 122, and a return line 123. The pure water supply line 122 is connected to the nozzle 121. The nozzle 121 ejects pure water supplied through the pure water supply line 122. A branch point 124 is provided in the pure water supply line 122. The return line 123 is connected to the branch point 124. Even during a period when pure water is not ejected from the nozzle 121, pure water flows in a portion of the pure water supply line 122 upstream of the branch point 124 and in the return line 123. The pure water supply unit 120 supplies a first amount of pure water to the upper surface of the substrate W to form a pure water liquid film, i.e., a second liquid film LF2, on the upper surface of the substrate W. The pure water supply unit 120 is an example of a processing liquid supply unit.

[0096] The first camera unit 131 is disposed above the mounting table 111. The first camera unit 131 captures the upper surface of the substrate W mounted on the mounting table 111 and the substrate W supported by the plurality of pins 115 to obtain an image of the upper surface of the substrate W, i.e., an upper surface image. The first camera unit 131 may include a camera to generate an image. The first camera unit 131 may also include a laser light source and a camera to generate an image by a light sectioning method. Figure 2 In the example, the number of the first imaging unit 131 is one, but the number of the first imaging unit 131 may be two or more.

[0097] The second camera unit 132 is disposed on the side of the mounting table 111. The second camera unit 132 captures the lower surface of the substrate W supported by the pins 115 to obtain an image of the lower surface of the substrate W, i.e., a lower surface image. The second camera unit 132 may include a camera to generate an image. The second camera unit 132 may also include a laser light source and a camera to generate an image by a light cutting method. Figure 2 In the example, the number of the second imaging unit 132 is one, but the number of the second imaging unit 132 may be two or more.

[0098] The second transfer stage 54 functions as a part of the substrate standby section.

[0099] [Operation of the substrate processing system]

[0100] Reference Figure 6 The operation of the substrate processing system 1 according to the embodiment, that is, the substrate processing method will be described. Figure 6 1 is a flow chart showing a substrate processing method according to an embodiment of the present invention. Figure 6 Processing shown.

[0101] First, the cassette C is loaded into the loading and unloading section 2 with a plurality of substrates W therein, and is placed on the loading port 21. The substrates W are held horizontally and at a second pitch P2 (P2 = N × P1) in the vertical direction inside the cassette C. N is a natural number greater than or equal to 2, and is 2 in the present embodiment, but may be 3 or greater.

[0102] Next, the cartridge transport device 24 transports the cartridge C from the load port 21 to the loader 23. The lid of the cartridge C transported to the loader 23 is opened by the lid opening and closing mechanism.

[0103] Next, the substrate transfer device 31 receives the substrate W contained in the cassette C ( Figure 6 S1) and transported to the substrate group forming part 32.

[0104] Next, the substrate group forming unit 32 holds a plurality of substrates W at a first pitch P1 (P1=P2 / N) to form a substrate group L ( Figure 6One substrate group L is composed of, for example, substrates W of M boxes C. Since the pitch of the substrates W is narrowed from the second pitch P2 to the first pitch P1, the number of substrates W that can be processed at one time can be increased.

[0105] Next, the first transport device 43 receives the substrate group L from the substrate group forming portion 32 and transports the substrate group L to the treatment tool 44 .

[0106] Next, the treatment tool 44 begins to descend from the top of the chemical solution tank 41, and the substrate group L is immersed in the chemical solution to perform chemical solution treatment ( Figure 6 Then, the treatment tool 44 rises to lift the substrate group L from the liquid medicine, and then moves horizontally (towards the negative side in the X-axis direction) toward the top of the rinse liquid tank 42.

[0107] Next, the treatment tool 44 begins to descend from the top of the rinse liquid tank 42, and the substrate group L is immersed in the first rinse liquid to perform the rinse liquid treatment ( Figure 6 Then, the processing tool 44 rises to lift the substrate group L from the first rinse liquid. Next, the first conveying device 43 receives the substrate group L from the processing tool 44 and transfers it to the second conveying device 52.

[0108] Next, the second transfer arm 52c of the second transfer device 52 moves in the horizontal direction (toward the positive side in the Y-axis direction) and starts to descend from the top of the immersion tank 51 so that the substrate group L is immersed in the second rinse liquid ( Figure 6 Before the substrate group L is lifted from the second rinse liquid by the third transport device 53, the plurality of substrates W are kept in the second rinse liquid. Since the substrates W are below the liquid surface of the second rinse liquid, the surface tension of the second rinse liquid does not act on the substrates W, thereby preventing the concave-convex pattern of the substrates W from collapsing.

[0109] Next, the third transport device 53 transports the substrates W of the substrate group L held by the second transport arm 52c in the second rinse liquid to the second transfer stage 54. The third transport device 53 transports the substrates W to the second transfer stage 54 one by one, for example.

[0110] Next, the fourth transfer device 61 receives the substrate W from the second transfer stage 54 and transfers the substrate W to the liquid processing device 62 .

[0111] Next, the liquid processing device 62 processes the substrates W one by one using liquid ( Figure 6 The liquid may be of multiple types, for example, pure water such as DIW and a drying liquid having a lower surface tension than pure water. The drying liquid may be, for example, an alcohol such as IPA. The liquid processing device 62 sequentially supplies pure water and drying liquid to the upper surface of the substrate W to form a liquid film of the drying liquid.

[0112] Next, the fourth transport device 61 receives the substrate W from the liquid processing device 62 and holds the substrate W horizontally with the liquid film of the drying liquid facing upward. The fourth transport device 61 transports the substrate W from the liquid processing device 62 to the drying device 63 .

[0113] Next, the drying device 63 uses the supercritical fluid to dry the substrates W one by one ( Figure 6 S5). The drying liquid can be replaced by the supercritical fluid, thereby suppressing the collapse of the concave-convex pattern of the substrate W caused by the surface tension of the drying liquid. The supercritical fluid requires a pressure-resistant container, so in order to miniaturize the pressure-resistant container, single-chip processing is performed instead of batch processing.

[0114] In addition, the drying device 63 is a single-chip type in this embodiment, but it can also be a batch type as described above. The batch type drying device 63 uses a supercritical fluid to uniformly dry a plurality of substrates W on which a liquid film is formed. The single-chip drying device 63 has one transfer arm for holding the substrate W, while the batch type drying device 63 has a plurality of transfer arms.

[0115] Next, the fourth transfer device 61 receives the substrate W from the drying device 63 and transfers the substrate W to the first transfer stage 33 .

[0116] Next, the substrate transfer device 31 receives the substrate W from the first transfer station 33 and stores it in the cassette C ( Figure 6 The cassette C is unloaded from the loading / unloading section 2 in a state where a plurality of substrates W are accommodated therein.

[0117] [Action of the second transfer station]

[0118] (first example)

[0119] Reference Figures 7 to 14 A first example of the operation of the second transfer station 54 will be described. Figure 7 This is a flowchart showing a first example of the operation of the second transfer station 54 . Figures 8 to 14 1 is a diagram showing a first example of the operation of the second transfer station 54. Figures 8 to 14 In each of the figures, Figure (a) is a side view showing the second transfer station 54, and Figure (b) is a cross-sectional view of the substrate W shown in Figure (a). Figure 7 Processing shown.

[0120] In step S101, when the substrate W is transported to the second transfer station 54 by the third transport device 53, Figure 8 As shown in (a), the substrate W is placed on three pins 115. Figure 8 As shown in (b), on the upper surface and the lower surface of the substrate W, a liquid film of the second rinse liquid, that is, a first liquid film LF1 is formed.

[0121] In step S102 , the load sensor 116 measures a first mass which is a mass including the pin supporting member 114 , the pins 115 , the substrate W, the first liquid film LF1 attached to the upper surface of the substrate W, and the first liquid film LF1 attached to the lower surface of the substrate W. The load sensor 116 sends the measured first mass to the control device 9 .

[0122] In step S103, Fig. 9 As shown in (a) of FIG. 1 , the nozzle 121 sprays a first amount of pure water toward the upper surface of the substrate W. As a result, as shown in FIG. Fig. 9 As shown in (b), a pure water liquid film, namely, a second liquid film LF2 is formed on the upper surface of the substrate W.

[0123] In step S104, Fig.10 As shown in (a), the nozzle 121 stops spraying pure water toward the substrate W. At this time, Fig.10 As shown in (b), the state where the second liquid film LF2 is formed on the upper surface of the substrate W is maintained. Next, the load sensor 116 measures the mass of the pin support member 114, the pin 115, the substrate W, the first liquid film LF1 attached to the upper surface of the substrate W, the first liquid film LF1 attached to the lower surface of the substrate W, and the second liquid film LF2, that is, the second mass. The load sensor 116 sends the measured second mass to the control device 9. The control device 9 calculates the mass of the second liquid film LF2 by subtracting the first mass from the second mass.

[0124] In step S105, the control device 9 determines whether the mass of the second liquid film LF2 is above the first threshold value. The first threshold value is set, for example, as the lower limit mass of the monitoring range. When the mass of the second liquid film LF2 is above the first threshold value ("Yes" in step S105), the control device 9 causes the processing to enter step S106. When the mass of the second liquid film LF2 is less than the first threshold value ("No" in step S105), the control device 9 causes the processing to enter step S121. In step S121, the nozzle 121 again sprays pure water in an amount that is insufficient for the target value toward the upper surface of the substrate W. After step S121, the control device 9 returns the processing to step S104.

[0125] In step S106, if Fig.11 As shown in (a) of FIG. 1 , the driving source 118 lowers the arm 117 to lower the load sensor 116, the pin support member 114, the pin 115, and the substrate W, so that the substrate W is placed on the mounting table 111. At this time, as shown in FIG. Fig.11 As shown in (b), the state in which the second liquid film LF2 is formed on the upper surface of the substrate W is maintained.

[0126] In step S107, Fig.12As shown in (a) of FIG. 1 , the ejector 113 sucks the first liquid film LF1 attached to the lower surface of the substrate W through the suction channel 112, and adsorbs the substrate W onto the mounting table 111. As a result, as shown in FIG. Fig.12 As shown in (b), the first liquid film LF1 attached to the lower surface of the substrate W is removed. Step S107 may be started before step S106 or in the middle of step S106, but is preferably performed after step S106, that is, after the substrate W is placed on the stage 111. This is because if suction is started by the ejector 113 in a state where there is a gap between the stage 111 and the substrate W, the air in the gap is sucked and the suction efficiency is easily reduced.

[0127] In step S108, Fig.12 As shown in (a), the first camera unit 131 captures the upper surface of the substrate W placed on the stage 111 to obtain an image of the upper surface of the substrate W, i.e., an upper surface image. The first camera unit 131 sends the obtained upper surface image to the control device 9. Step S108 may be performed before step S107, or may be performed simultaneously with step S107.

[0128] In step S109, if Fig.13 As shown in (a), the driving source 118 raises the arm 117 to raise the load sensor 116, the pin supporting member 114, the pin 115 and the substrate W, and supports the substrate W using the pin 115, so that the substrate W is separated from the mounting table 111. Fig.13 As shown in (b), the state in which the second liquid film LF2 is formed on the upper surface of the substrate W is maintained.

[0129] In step S110, the load sensor 116 measures the mass of the pin support member 114, the pin 115, the substrate W, the first liquid film LF1 attached to the upper surface of the substrate W, and the second liquid film LF2, that is, the third mass. Fig.13 As shown in (b), since the first liquid film LF1 attached to the lower surface of the substrate W is removed, the third mass does not include the mass of the first liquid film LF1 attached to the lower surface of the substrate W. The load sensor 116 sends the measured third mass to the control device 9. The control device 9 calculates the mass of the first liquid film LF1 removed from the lower surface of the substrate W by subtracting the third mass from the second mass.

[0130] In step S111, Fig.13As shown in (a), the second imaging unit 132 captures the lower surface of the substrate W supported by the pins 115 to obtain an image of the lower surface of the substrate W, i.e., a lower surface image. The second imaging unit 132 sends the obtained lower surface image to the control device 9. Step S111 may be performed before step S110, or may be performed simultaneously with step S110.

[0131] In step S112, the control device 9 determines whether the mass of the second liquid film LF2 is greater than the second threshold value. The second threshold value is a value greater than the first threshold value. The second threshold value is set, for example, to a value greater than the upper limit mass of the monitoring range. The second threshold value is set, for example, to a value smaller than the mass when the possibility of dripping of the second liquid film LF2 attached to the upper surface of the substrate W becomes higher when the fourth conveying device 61 conveys the substrate W at a normal conveying speed. When the mass of the second liquid film LF2 is greater than the second threshold value ("Yes" in step S112), the control device 9 causes the processing to enter step S113. When the mass of the second liquid film LF2 is less than the second threshold value ("No" in step S112), the control device 9 causes the processing to enter step S131.

[0132] In step S113, the control device 9 determines whether the state of the second liquid film LF2 is normal based on the upper surface image, and determines whether the state of the lower surface of the substrate W is normal based on the lower surface image. For example, when the control device 9 recognizes that the second liquid film LF2 is formed on the entire upper surface of the substrate W based on the upper surface image, the control device 9 determines that the state of the second liquid film LF2 is normal. For example, when the control device 9 recognizes that the second liquid film LF2 is not formed on a part of the upper surface of the substrate W (for example, the periphery, the central part) based on the upper surface image, the control device 9 determines that the state of the second liquid film LF2 is abnormal. For example, when the control device 9 recognizes that the first liquid film LF1 is not left on the lower surface of the substrate W based on the lower surface image, the control device 9 determines that the state of the lower surface of the substrate W is normal. For example, when the control device 9 recognizes that the first liquid film LF1 is left on a part of the lower surface of the substrate W (for example, the periphery, the central part) based on the lower surface image, the control device 9 determines that the state of the lower surface of the substrate W is abnormal. The control device 9 may store the state of the second liquid film LF2 (eg, normal or abnormal information) and the lower surface state of the substrate W (eg, normal or abnormal information) in association with the information for identifying the substrate W.

[0133] When the state of the second liquid film LF2 is normal and the state of the lower surface of the substrate W is normal, as shown in FIG. Fig.14As shown in (a), the control device 9 sends a command to the fourth transport device 61 to transport the substrate W supported by the pins 115 at a low speed (step S114), and the process is terminated. In this case, it is possible to suppress the second liquid film LF2 from dripping from the substrate W when the fourth transport device 61 transports the substrate W. Low-speed transport refers to transporting the substrate W at a speed slower than normal transport in which the substrate W is transported at a normal speed. The transport speed of the low-speed transport may be less than half of the transport speed of the normal transport.

[0134] When the state of the second liquid film LF2 is normal and the state of the lower surface of the substrate W is abnormal, the control device 9 returns the process to step S106. In this case, since the substrate W with the first liquid film LF1 remaining on the lower surface of the substrate W is not carried out from the second transfer stage 54, it is possible to prevent the first liquid film LF1 from dripping from the lower surface of the substrate W in the single-wafer processing unit 6. In addition, the process returns to step S106, so the first liquid film LF1 attached to the lower surface of the substrate W is removed again in step S107.

[0135] When the state of the second liquid film LF2 is abnormal and the state of the lower surface of the substrate W is normal, as shown in FIG. Fig.14 As shown in (a), the control device 9 sends a command to the fourth conveying device 61 to convey the substrate W supported by the pins 115 at a low speed (step S115), and the processing is terminated. When the mass of the second liquid film LF2 is above the second threshold value and the state of the second liquid film LF2 is abnormal, if pure water is sprayed again on the upper surface of the substrate W, the second liquid film LF2 is likely to drip from the substrate W when the fourth conveying device 61 conveys the substrate W. Therefore, the substrate W is conveyed to the next liquid processing device 62 without spraying pure water on the upper surface of the substrate W again, and is processed in the liquid processing device 62 as soon as possible. As a result, it is easy to suppress the second liquid film LF2 from dripping from the substrate W during conveyance, and it is easy to suppress the collapse of the concave-convex pattern caused by drying.

[0136] When the state of the second liquid film LF2 is abnormal and the state of the lower surface of the substrate W is abnormal, as shown in FIG. Fig.14 As shown in (a), the control device 9 sends a command to the fourth conveying device 61 to convey the substrate W supported by the pins 115 at a low speed (step S116), and the processing is terminated. When the mass of the second liquid film LF2 is above the second threshold value and the state of the second liquid film LF2 is abnormal, if pure water is sprayed again on the upper surface of the substrate W, the second liquid film LF2 is likely to drip from the substrate W when the fourth conveying device 61 conveys the substrate W. Therefore, the substrate W is conveyed to the next liquid processing device 62 without spraying pure water on the upper surface of the substrate W again, and is processed in the liquid processing device 62 as soon as possible. As a result, it is easy to suppress the second liquid film LF2 from dripping from the substrate W during conveyance, and it is easy to suppress the collapse of the concave-convex pattern caused by drying.

[0137] In step S131 , the control device 9 determines whether the state of the second liquid film LF2 is normal based on the upper surface image, and determines whether the state of the lower surface of the substrate W is normal based on the lower surface image. The determination in step S131 may be the same as the determination in step S113 .

[0138] When the state of the second liquid film LF2 is normal and the state of the lower surface of the substrate W is normal, as shown in FIG. Fig.14 As shown in (a), the control device 9 sends a command to the fourth conveying device 61 to normally convey the substrate W supported by the pins 115 (step S132), and the processing is terminated. In step S132, since the mass of the second liquid film LF2 is less than the second threshold value, the second liquid film LF2 will not drip from the substrate W or will hardly drip even if the fourth conveying device 61 normally conveys the substrate W.

[0139] When the state of the second liquid film LF2 is normal and the state of the lower surface of the substrate W is abnormal, the control device 9 returns the process to step S106. In this case, since the substrate W with the first liquid film LF1 remaining on the lower surface of the substrate W is not carried out from the second transfer stage 54, it is possible to prevent the first liquid film LF1 from dripping from the lower surface of the substrate W in the single-wafer processing unit 6. In addition, since the process returns to step S106, the first liquid film LF1 attached to the lower surface of the substrate W is removed again in step S107.

[0140] When the state of the second liquid film LF2 is abnormal and the state of the lower surface of the substrate W is normal, the nozzle 121 again sprays pure water of an amount less than the upper limit mass of the monitoring range toward the upper surface of the substrate W (step S133), and the control device 9 returns the process to step S104. In this case, the state of the second liquid film LF2 can be improved within the range where the mass of the second liquid film LF2 does not exceed the second threshold value.

[0141] When the state of the second liquid film LF2 is abnormal and the state of the lower surface of the substrate W is abnormal, the nozzle 121 again ejects pure water of an amount less than the upper limit mass of the monitoring range toward the upper surface of the substrate W (step S134), and the control device 9 returns the process to step S104. In this case, the state of the second liquid film LF2 can be improved within the range where the mass of the second liquid film LF2 does not exceed the second threshold value.

[0142] According to the first example of the operation of the second transfer station 54 described above, when the quality of the second liquid film LF2 is equal to or greater than the first threshold, the control device 9 determines the state of the second liquid film LF2 based on the upper surface image. In this case, coating process defects can be detected with high accuracy.

[0143] According to the first example of the operation of the second transfer stage 54, the second liquid film LF2 is formed on the upper surface of the substrate W (step S103) immediately after the load cell 116 measures the first mass (step S102). Therefore, it is easy to prevent the upper surface of the substrate W from drying.

[0144] (Second example)

[0145] Reference Figures 15 to 22 A second example of the operation of the second transfer station 54 will be described. Fig.15 1 is a flowchart showing a second example of the operation of the second delivery station 54 . Figures 16 to 22 2 is a diagram showing a second example of the operation of the second transfer station 54. Figures 16 to 22 In each of the figures, Figure (a) is a side view showing the second transfer station 54, and Figure (b) is a cross-sectional view of the substrate W shown in Figure (a). Fig.15 Processing shown.

[0146] In step S201, when the substrate W is transported to the second transfer station 54 by the third transport device 53, Fig.16 As shown in (a), the substrate W is placed on three pins 115. Fig.16 As shown in (b), on the upper surface and the lower surface of the substrate W, a liquid film of the second rinse liquid, that is, a first liquid film LF1 is formed.

[0147] In step S202 , the load sensor 116 measures a first mass which is a mass including the pin supporting member 114 , the pins 115 , the substrate W, the first liquid film LF1 attached to the upper surface of the substrate W, and the first liquid film LF1 attached to the lower surface of the substrate W. The load sensor 116 sends the measured first mass to the control device 9 .

[0148] In step S203, if Fig.17 As shown in (a) of FIG. 1 , the driving source 118 lowers the arm 117 to lower the load sensor 116, the pin support member 114, the pin 115, and the substrate W, so that the substrate W is placed on the mounting table 111. At this time, as shown in FIG. Fig.17 As shown in (b), the first liquid film LF1 is formed on the upper surface and the lower surface of the substrate W.

[0149] In step S204, Fig.18 As shown in (a) of FIG. 1 , the ejector 113 sucks the first liquid film LF1 attached to the lower surface of the substrate W through the suction channel 112, and adsorbs the substrate W onto the mounting table 111. As a result, as shown in FIG. Fig.18As shown in (b), the first liquid film LF1 attached to the lower surface of the substrate W is removed. Step S204 may be started before step S203 or in the middle of step S203, but is preferably performed after step S203, that is, after the substrate W is placed on the stage 111. This is because if suction is started by the ejector 113 in a state where there is a gap between the stage 111 and the substrate W, the air in the gap is sucked and the suction efficiency is easily reduced.

[0150] In step S205, Fig.19 As shown in (a), the driving source 118 raises the arm 117 to raise the load sensor 116, the pin supporting member 114, the pin 115 and the substrate W, and supports the substrate W using the pin 115, so that the substrate W is separated from the mounting table 111. Fig.19 As shown in (b), the first liquid film LF1 remains on the upper surface of the substrate W.

[0151] In step S206, the load sensor 116 measures the mass of the pin support member 114, the pins 115, the substrate W, and the first liquid film LF1 attached to the upper surface of the substrate W, that is, the fourth mass. Fig.19 As shown in (b), since the first liquid film LF1 attached to the lower surface of the substrate W is removed, the fourth mass does not include the mass of the first liquid film LF1 attached to the lower surface of the substrate W. The load sensor 116 sends the measured fourth mass to the control device 9. The control device 9 calculates the mass of the first liquid film LF1 removed from the lower surface of the substrate W by subtracting the fourth mass from the first mass.

[0152] In step S207, Fig.19 As shown in (a), the second imaging unit 132 captures the lower surface of the substrate W supported by the pins 115 to obtain an image of the lower surface of the substrate W, i.e., a lower surface image. The second imaging unit 132 sends the obtained lower surface image to the control device 9. Step S207 may be performed before step S206, or may be performed simultaneously with step S206.

[0153] In step S208, Fig. 20 As shown in (a) of FIG. 1 , the nozzle 121 sprays a first amount of pure water toward the upper surface of the substrate W. As a result, as shown in FIG. Fig. 20 As shown in (b), the second liquid film LF2 is formed on the upper surface of the substrate W.

[0154] In step S209, if Fig.21 As shown in (a), the nozzle 121 stops spraying pure water toward the substrate W. At this time, Fig.21As shown in (b), the state where the second liquid film LF2 is formed on the upper surface of the substrate W is maintained. Next, the load sensor 116 measures the mass of the pin support member 114, the pin 115, the substrate W, the first liquid film LF1 attached to the upper surface of the substrate W, and the second liquid film LF2, i.e., the fifth mass. Fig.21 As shown in (b), since the first liquid film LF1 attached to the lower surface of the substrate W is removed, the fifth mass does not include the mass of the first liquid film LF1 attached to the lower surface of the substrate W. The load sensor 116 sends the measured second mass to the control device 9. The control device 9 calculates the mass of the second liquid film LF2 by subtracting the fourth mass from the fifth mass.

[0155] In step S210, Fig.21 As shown in (a), the first imaging unit 131 captures the upper surface of the substrate W supported by the pins 115 to obtain an image of the upper surface of the substrate W, that is, an upper surface image. The first imaging unit 131 sends the obtained upper surface image to the control device 9. Step S210 may be performed before step S209 or simultaneously with step S209.

[0156] In step S211, the control device 9 determines whether the mass of the second liquid film LF2 is greater than the first threshold value. When the mass of the second liquid film LF2 is greater than the first threshold value ("Yes" in step S211), the control device 9 causes the process to enter step S212. When the mass of the second liquid film LF2 is less than the first threshold value ("No" in step S211), the control device 9 causes the process to enter step S221. In step S221, the nozzle 121 again sprays pure water in an amount that is less than the target value toward the upper surface of the substrate W. After step S221, the control device 9 returns the process to step S209.

[0157] In step S212, the control device 9 determines whether the mass of the second liquid film LF2 is greater than the second threshold value. When the mass of the second liquid film LF2 is greater than the second threshold value ("Yes" in step S21), the control device 9 causes the process to proceed to step S213. When the mass of the second liquid film LF2 is less than the second threshold value ("No" in step S212), the control device 9 causes the process to proceed to step S231.

[0158] In step S213, the control device 9 determines whether the state of the second liquid film LF2 is normal based on the upper surface image, and determines whether the state of the lower surface of the substrate W is normal based on the lower surface image. The determination in step S213 may be the same as the determination in step S113.

[0159] When the state of the second liquid film LF2 is normal and the state of the lower surface of the substrate W is normal, as shown in FIG. Fig. 22As shown in (a), the control device 9 sends a command to the fourth transport device 61 to transport the substrate W supported by the pins 115 at a low speed (step S214), and the process is terminated. In this case, the second liquid film LF2 can be suppressed from dripping from the substrate W when the fourth transport device 61 transports the substrate W.

[0160] When the state of the second liquid film LF2 is normal and the state of the lower surface of the substrate W is abnormal, the control device 9 causes the process to enter step S241. In steps S241 to S245, the control device 9 performs the same process as steps S203 to S207, and returns the process to step S209. In this case, the substrate W with the first liquid film LF1 left on the lower surface of the substrate W is not carried out from the second transfer stage 54, so that the first liquid film LF1 can be prevented from dripping from the lower surface of the substrate W in the single-wafer processing unit 6. In addition, since the process enters step S241, the first liquid film LF1 attached to the lower surface of the substrate W is removed again in step S242.

[0161] When the state of the second liquid film LF2 is abnormal and the state of the lower surface of the substrate W is normal, as shown in FIG. Fig. 22 As shown in (a), the control device 9 sends a command to the fourth conveying device 61 to convey the substrate W supported by the pins 115 at a low speed (step S215), and the processing is terminated. When the mass of the second liquid film LF2 is above the second threshold value and the state of the second liquid film LF2 is abnormal, if pure water is sprayed again on the upper surface of the substrate W, the second liquid film LF2 is likely to drip from the substrate W when the fourth conveying device 61 conveys the substrate W. Therefore, the substrate W is conveyed to the next liquid processing device 62 without spraying pure water on the upper surface of the substrate W again, and is processed in the liquid processing device 62 as soon as possible. As a result, it is easy to suppress the second liquid film LF2 from dripping from the substrate W during conveyance, and it is easy to suppress the collapse of the concave-convex pattern caused by drying.

[0162] When the state of the second liquid film LF2 is abnormal and the state of the lower surface of the substrate W is abnormal, as shown in FIG. Fig. 22 As shown in (a), the control device 9 sends a command to the fourth conveying device 61 to convey the substrate W supported by the pins 115 at a low speed (step S216), and the processing is terminated. When the mass of the second liquid film LF2 is above the second threshold value and the state of the second liquid film LF2 is abnormal, if pure water is sprayed again on the upper surface of the substrate W, the second liquid film LF2 is likely to drip from the substrate W when the fourth conveying device 61 conveys the substrate W. Therefore, the substrate W is conveyed to the next liquid processing device 62 without spraying pure water on the upper surface of the substrate W again, and is processed in the liquid processing device 62 as soon as possible. As a result, it is easy to suppress the second liquid film LF2 from dripping from the substrate W during the conveyance, and it is easy to suppress the collapse of the concave-convex pattern caused by drying.

[0163] In step S231 , the control device 9 determines whether the state of the second liquid film LF2 is normal based on the upper surface image, and determines whether the state of the lower surface of the substrate W is normal based on the lower surface image. The determination in step S231 may be the same as the determination in step S213 .

[0164] When the state of the second liquid film LF2 is normal and the state of the lower surface of the substrate W is normal, as shown in FIG. Fig. 22 As shown in (a), the control device 9 sends a command to the fourth conveying device 61 to normally convey the substrate W supported by the pins 115 (step S232), and the processing is terminated. In step S232, since the mass of the second liquid film LF2 is less than the second threshold value, the second liquid film LF2 will not drip from the substrate W or will hardly drip even if the fourth conveying device 61 normally conveys the substrate W.

[0165] When the state of the second liquid film LF2 is normal and the state of the lower surface of the substrate W is abnormal, the control device 9 causes the process to enter step S241. In steps S241 to S245, the control device 9 performs the same process as steps S203 to S207, and returns the process to step S209. In this case, the substrate W with the first liquid film LF1 left on the lower surface of the substrate W is not carried out from the second transfer stage 54, so that the first liquid film LF1 can be prevented from dripping from the lower surface of the substrate W in the single-wafer processing unit 6. In addition, since the process enters step S241, the first liquid film LF1 attached to the lower surface of the substrate W is removed again in step S242.

[0166] When the state of the second liquid film LF2 is abnormal and the state of the lower surface of the substrate W is normal, the nozzle 121 again sprays pure water of an amount less than the upper limit mass of the monitoring range toward the upper surface of the substrate W (step S233), and the control device 9 returns the process to step S209. In this case, the state of the second liquid film LF2 can be improved within the range where the mass of the second liquid film LF2 does not exceed the second threshold value.

[0167] When the state of the second liquid film LF2 is abnormal and the state of the lower surface of the substrate W is abnormal, the nozzle 121 again ejects pure water of an amount less than the upper limit mass of the monitoring range toward the upper surface of the substrate W (step S234), and the control device 9 returns the process to step S209. In this case, the state of the second liquid film LF2 can be improved within the range where the mass of the second liquid film LF2 does not exceed the second threshold value.

[0168] According to the second example of the operation of the second transfer station 54 described above, when the quality of the second liquid film LF2 is equal to or greater than the first threshold, the control device 9 determines the state of the second liquid film LF2 based on the upper surface image. In this case, coating process defects can be detected with high accuracy.

[0169] In addition, according to the second example of the operation of the second transfer station 54, after the ejector 113 removes the first liquid film LF1 attached to the lower surface of the substrate W by suction (step S204), pure water is sprayed onto the upper surface of the substrate W (step S208). Therefore, it is possible to prevent the second liquid film LF2 formed on the outer peripheral portion of the substrate W from being sucked away and disappearing.

[0170] (Third example)

[0171] Reference Figure 23 to Figure 29 A third example of the operation of the second transfer station 54 will be described. Fig.23 This is a flowchart showing a third example of the operation of the second transfer station 54 . Figure 24 to Figure 29 2 is a diagram showing a third example of the operation of the second transfer station 54. Figure 24 to Figure 29 In each of the figures, Figure (a) is a side view showing the second transfer station 54, and Figure (b) is a cross-sectional view of the substrate W shown in Figure (a). Fig.23 Processing shown.

[0172] In step S301, when the substrate W is transported to the second transfer station 54 by the third transport device 53, Fig.24 As shown in (a), the substrate W is placed on three pins 115. Fig.24 As shown in (b), on the upper surface and the lower surface of the substrate W, a liquid film of the second rinse liquid, that is, a first liquid film LF1 is formed.

[0173] In step S302 , the load sensor 116 measures a first mass which is a mass including the pin supporting member 114 , the pins 115 , the substrate W, the first liquid film LF1 attached to the upper surface of the substrate W, and the first liquid film LF1 attached to the lower surface of the substrate W. The load sensor 116 sends the measured first mass to the control device 9 .

[0174] In step S303, Fig.25 As shown in (a) of FIG. 1 , the driving source 118 lowers the arm 117 to lower the load sensor 116, the pin support member 114, the pin 115, and the substrate W, so that the substrate W is placed on the mounting table 111. At this time, as shown in FIG. Fig.25 As shown in (b), the first liquid film LF1 is formed on the upper surface and the lower surface of the substrate W.

[0175] In step S304, Fig.26As shown in (a) of FIG. 1 , the ejector 113 sucks the first liquid film LF1 attached to the lower surface of the substrate W through the suction channel 112, and adsorbs the substrate W onto the mounting table 111. As a result, as shown in FIG. Fig.26 As shown in (b), the first liquid film LF1 attached to the lower surface of the substrate W is removed. Step S304 may be started before step S303 or in the middle of step S303, but is preferably performed after step S303, that is, after the substrate W is placed on the stage 111. This is because if suction is started by the ejector 113 in a state where there is a gap between the stage 111 and the substrate W, the air in the gap is sucked and the suction efficiency is easily reduced.

[0176] In step S305, Fig.26 As shown in (a), the nozzle 121 sprays a first amount of pure water toward the upper surface of the substrate W. As a result, Fig.26 As shown in (b), the second liquid film LF2 is formed on the upper surface of the substrate W. At this time, since the substrate W is adsorbed on the mounting table 111, even in the case of a warped substrate W, pure water can be sprayed toward the upper surface of the substrate W while keeping the upper surface of the substrate W flat. Therefore, it is easy to uniformly form the second liquid film LF2 on the entire upper surface of the substrate W.

[0177] In step S306, the nozzle 121 stops spraying pure water toward the substrate W. Fig.26 As shown in (b), the state where the second liquid film LF2 is formed on the upper surface of the substrate W is maintained. Fig.26 As shown in (a), the first camera unit 131 captures the upper surface of the substrate W placed on the stage 111 to obtain an image of the upper surface of the substrate W, i.e., an upper surface image. The first camera unit 131 sends the acquired upper surface image to the control device 9. After step S306 is completed, the control device 9 may not proceed to step S307, but maintain the state in which the substrate W is adsorbed on the stage 111 until there is an instruction to transport the substrate W to the single-wafer processing unit 6. In this case, the partial loss of the second liquid film LF can be suppressed.

[0178] In step S307, Fig. 27 As shown in (a), the driving source 118 raises the arm 117 to raise the load sensor 116, the pin supporting member 114, the pin 115 and the substrate W, and supports the substrate W using the pin 115, so that the substrate W is separated from the mounting table 111. Fig. 27 As shown in (b), the state in which the second liquid film LF2 is formed on the upper surface of the substrate W is maintained.

[0179] In step S308, the load sensor 116 measures the mass of the pin support member 114, the pin 115, the substrate W, the first liquid film LF1 attached to the upper surface of the substrate W, and the second liquid film LF2, that is, the sixth mass. Fig.28 As shown in (b), since the first liquid film LF1 attached to the lower surface of the substrate W is removed, the sixth mass does not include the mass of the first liquid film LF1 attached to the lower surface of the substrate W. The load sensor 116 sends the measured sixth mass to the control device 9. The control device 9 calculates the mass of the second liquid film LF2 by subtracting the first mass and the specified mass from the sixth mass. The specified mass can be the estimated mass, which is the mass of the first liquid film LF1 removed from the lower surface of the substrate W. Fig.23 The predetermined mass is determined in advance before the start of the process shown. In the third example, the mass of the first liquid film LF1 removed from the lower surface of the substrate W is not calculated, so the predetermined mass is used.

[0180] In step S309, if Fig.28 As shown in (a), the second imaging unit 132 captures the lower surface of the substrate W supported by the pins 115 to obtain an image of the lower surface of the substrate W, that is, a lower surface image. The second imaging unit 132 sends the obtained lower surface image to the control device 9. Step S309 may be performed before step S308, or may be performed simultaneously with step S308.

[0181] In step S311, the control device 9 determines whether the mass of the second liquid film LF2 is greater than the first threshold value. When the mass of the second liquid film LF2 is greater than the first threshold value ("Yes" in step S311), the control device 9 causes the process to enter step S312. When the mass of the second liquid film LF2 is less than the first threshold value ("No" in step S311), the control device 9 causes the process to enter step S321. In step S321, the nozzle 121 again sprays pure water in an amount that is less than the target value toward the upper surface of the substrate W. After step S321, the control device 9 returns the process to step S308.

[0182] In step S312, the control device 9 determines whether the mass of the second liquid film LF2 is greater than the second threshold value. When the mass of the second liquid film LF2 is greater than the second threshold value ("Yes" in step S312), the control device 9 causes the process to proceed to step S313. When the mass of the second liquid film LF2 is less than the second threshold value ("No" in step S312), the control device 9 causes the process to proceed to step S331.

[0183] In step S313, the control device 9 determines whether the state of the second liquid film LF2 is normal based on the upper surface image, and determines whether the state of the lower surface of the substrate W is normal based on the lower surface image. The determination in step S313 may be the same as the determination in step S113.

[0184] When the state of the second liquid film LF2 is normal and the state of the lower surface of the substrate W is normal, as shown in FIG. Fig.29 As shown in (a), the control device 9 sends a command to the fourth transport device 61 to transport the substrate W supported by the pins 115 at a low speed (step S314), and the process ends. In this case, the second liquid film LF2 can be suppressed from dripping from the substrate W when the fourth transport device 61 transports the substrate W.

[0185] When the state of the second liquid film LF2 is normal and the state of the lower surface of the substrate W is abnormal, the control device 9 causes the process to enter step S341. In steps S341, S342, and S343, the control device 9 performs the same processes as steps S303, S342, and S307, and returns the process to step S308. In this case, the substrate W with the first liquid film LF1 left on the lower surface of the substrate W is not carried out from the second transfer stage 54, so that the first liquid film LF1 can be prevented from dripping from the lower surface of the substrate W in the single-wafer processing unit 6. In addition, since the process enters step S341, the first liquid film LF1 attached to the lower surface of the substrate W is removed again in step S342.

[0186] When the state of the second liquid film LF2 is abnormal and the state of the lower surface of the substrate W is normal, as shown in FIG. Fig.29 As shown in (a), the control device 9 sends a command to the fourth conveying device 61 to convey the substrate W supported by the pins 115 at a low speed (step S315), and the processing is terminated. When the mass of the second liquid film LF2 is above the second threshold value and the state of the second liquid film LF2 is abnormal, if pure water is sprayed again on the upper surface of the substrate W, the second liquid film LF2 is likely to drip from the substrate W when the fourth conveying device 61 conveys the substrate W. Therefore, the substrate W is conveyed to the next liquid processing device 62 without spraying pure water on the upper surface of the substrate W again, and is processed in the liquid processing device 62 as soon as possible. As a result, it is easy to suppress the second liquid film LF2 from dripping from the substrate W during conveyance, and it is easy to suppress the collapse of the concave-convex pattern caused by drying.

[0187] When the state of the second liquid film LF2 is abnormal and the state of the lower surface of the substrate W is abnormal, as shown in FIG. Fig.29As shown in (a), the control device 9 sends a command to the fourth conveying device 61 to convey the substrate W supported by the pins 115 at a low speed (step S316), and the processing is terminated. When the mass of the second liquid film LF2 is above the second threshold value and the state of the second liquid film LF2 is abnormal, if pure water is sprayed again on the upper surface of the substrate W, the second liquid film LF2 is likely to drip from the substrate W when the fourth conveying device 61 conveys the substrate W. Therefore, the substrate W is conveyed to the next liquid processing device 62 without spraying pure water on the upper surface of the substrate W again, and is processed in the liquid processing device 62 as soon as possible. As a result, it is easy to suppress the second liquid film LF2 from dripping from the substrate W during conveyance, and it is easy to suppress the collapse of the concave-convex pattern caused by drying.

[0188] In step S331 , the control device 9 determines whether the state of the second liquid film LF2 is normal based on the upper surface image, and determines whether the state of the lower surface of the substrate W is normal based on the lower surface image. The determination in step S331 may be the same as the determination in step S313 .

[0189] When the state of the second liquid film LF2 is normal and the state of the lower surface of the substrate W is normal, as shown in FIG. Fig.29 As shown in (a), the control device 9 sends a command to the fourth conveying device 61 to normally convey the substrate W supported by the pins 115 (step S332), and the processing is terminated. In step S332, since the mass of the second liquid film LF2 is less than the second threshold value, the second liquid film LF2 will not drip from the substrate W or will hardly drip even if the fourth conveying device 61 normally conveys the substrate W.

[0190] When the state of the second liquid film LF2 is normal and the state of the lower surface of the substrate W is abnormal, the control device 9 causes the process to enter step S341. In steps S341, S342, and S343, the control device 9 performs the same processes as steps S303, S342, and S307, and returns the process to step S308. In this case, since the substrate W with the first liquid film LF1 left on the lower surface of the substrate W is not carried out from the second transfer stage 54, it is possible to prevent the first liquid film LF1 from dripping from the lower surface of the substrate W in the single-wafer processing unit 6. In addition, since the process enters step S341, the first liquid film LF1 attached to the lower surface of the substrate W is removed again in step S342.

[0191] When the state of the second liquid film LF2 is abnormal and the state of the lower surface of the substrate W is normal, the nozzle 121 again ejects pure water of an amount less than the upper limit mass of the monitoring range toward the upper surface of the substrate W (step S333), and the control device 9 returns the process to step S308. In this case, the state of the second liquid film LF2 can be improved within the range where the mass of the second liquid film LF2 does not exceed the second threshold value.

[0192] When the state of the second liquid film LF2 is abnormal and the state of the lower surface of the substrate W is abnormal, the nozzle 121 again ejects pure water of an amount less than the upper limit mass of the monitoring range toward the upper surface of the substrate W (step S334), and the control device 9 returns the process to step S308. In this case, the state of the second liquid film LF2 can be improved within the range where the mass of the second liquid film LF2 does not exceed the second threshold value.

[0193] According to the third example of the operation of the second transfer station 54 described above, when the quality of the second liquid film LF2 is equal to or greater than the first threshold, the control device 9 determines the state of the second liquid film LF2 based on the upper surface image. In this case, coating process defects can be detected with high accuracy.

[0194] In addition, according to the third example of the operation of the second transfer stage 54, the nozzle 121 sprays pure water toward the upper surface of the substrate W while the substrate W is adsorbed on the mounting table 111. Therefore, even in the case of a warped substrate W, pure water can be sprayed toward the upper surface of the substrate W while the upper surface of the substrate W is flat. Therefore, it is easy to uniformly form the second liquid film LF2 on the entire upper surface of the substrate W.

[0195] The embodiments disclosed herein are to be considered in all respects as illustrative and non-restrictive. The embodiments described above may be omitted, replaced, or modified in various ways without departing from the appended claims and the gist thereof.

[0196] Description of Reference Numerals

[0197] 9: control device; 54: second transfer station; 110: substrate holding portion; 116: load sensor; 120: pure water supply portion; 131: first camera portion; LF1: first liquid film; LF2: second liquid film; W: substrate.

Claims

1. A substrate standby unit, characterized in that: A substrate having a first liquid film attached to an upper surface and a lower surface is made to wait, wherein the substrate waiting section comprises: a processing liquid supplying unit for supplying a first amount of processing liquid to the upper surface of the substrate to form a second liquid film; a mass measuring unit configured to measure the mass of the second liquid film; A first camera unit, which obtains an image of the upper surface of the substrate, namely, an upper surface image; as well as A liquid film state determination unit determines a state of the second liquid film using the upper surface image.

2. A substrate standby unit for allowing a substrate having a first liquid film attached to an upper surface and a lower surface to stand by, the substrate standby unit comprising: a processing liquid supplying unit, which supplies the processing liquid to the upper surface of the substrate; a mass measuring unit for measuring the mass of the substrate; A first imaging unit, which acquires an image of the upper surface of the substrate, namely, an upper surface image; and Control Department, in, The control unit performs the following control: causing the processing liquid supply unit to supply a first amount of the processing liquid to the upper surface of the substrate to form a second liquid film; calculating the mass of the second liquid film based on the mass of the substrate measured by the mass measuring unit; enabling the first camera unit to acquire the upper surface image; as well as When the mass of the second liquid film is equal to or greater than a first threshold, the state of the second liquid film is determined based on the upper surface image.

3. The substrate standby unit according to claim 2, wherein: A suction mechanism is also provided, wherein the suction mechanism sucks the lower surface of the substrate. The control unit further controls the suction mechanism to suction the lower surface of the substrate to remove the first liquid film attached to the lower surface of the substrate.

4. The substrate standby unit according to claim 3, wherein: Calculating the mass of the second liquid film includes: measuring a first mass of the substrate including the first liquid film attached to the upper surface and the first liquid film attached to the lower surface and excluding the second liquid film; measuring a second mass of the substrate including the first liquid film attached to the upper surface, the first liquid film attached to the lower surface, and the second liquid film; and The mass of the second liquid film is calculated based on the first mass and the second mass.

5. The substrate standby unit according to claim 3, wherein: Calculating the mass of the second liquid film includes: measuring a fourth mass of the substrate including the first liquid film attached to the upper surface and excluding the second liquid film and the first liquid film attached to the lower surface; measuring a fifth mass of the substrate including the second liquid film and the first liquid film attached to the upper surface and excluding the first liquid film attached to the lower surface; and The mass of the second liquid film is calculated based on the fourth mass and the fifth mass.

6. The substrate standby unit according to claim 3, wherein: Calculating the mass of the second liquid film includes: measuring a first mass of the substrate including the first liquid film attached to the upper surface and the first liquid film attached to the lower surface and excluding the second liquid film; measuring a sixth mass of the substrate including the second liquid film and the first liquid film attached to the upper surface and excluding the first liquid film attached to the lower surface; and The mass of the second liquid film is calculated based on the first mass and the sixth mass.

7. The substrate standby unit according to claim 3, wherein: A mounting table is also provided, and the mounting table holds the substrate horizontally. The mounting table has a plurality of suction holes connected to the suction mechanism.

8. The substrate standby unit according to claim 7, further comprising: a plurality of pins supporting the substrate; and A driving source is provided for raising and lowering the plurality of pins relative to the mounting table.

9. The substrate standby unit according to any one of claims 2 to 8, wherein: A second imaging unit is further provided for acquiring an image of the lower surface of the substrate, that is, a lower surface image.

10. The substrate standby unit according to claim 9, wherein: The control unit changes a process on the substrate based on the upper surface image and the lower surface image.

11. A substrate processing system, A substrate standby unit according to claim 1 is provided.

12. A substrate processing method, comprising: supplying a first amount of processing liquid to the upper surface of the substrate having the first liquid film attached to the upper surface and the lower surface to form a second liquid film; measuring the mass of the substrate on which the second liquid film is formed; calculating the mass of the second liquid film based on the mass; Acquiring an image of the upper surface of the substrate, i.e., an upper surface image; as well as When the mass of the second liquid film is equal to or greater than a first threshold, the state of the second liquid film is determined based on the upper surface image.

Images