Manufacturing method of tungsten through hole

Abstract

The invention provides a method for manufacturing a tungsten through hole, which comprises the following steps of: providing equipment comprising a first cavity and a second cavity which are communicated through a vacuum transmission channel, arranging a cooling device in the vacuum transmission channel, placing a substrate with a through hole in the surface in the first cavity, and introducing first gas into the first cavity to deposit a tungsten film layer, the intermediate structure comprises a substrate and a tungsten film layer, the tungsten film layer covers the surface of the substrate and fills the through hole, the first cavity, the vacuum conveying channel and the second cavity are pumped to the same preset vacuum degree, and the intermediate structure is conveyed into the second cavity through the vacuum conveying channel; and second gas is introduced into the second cavity to etch and remove the tungsten film layer outside the through hole, the tungsten through hole is formed, vacuum breaking is carried out, and the substrate with the tungsten through hole is taken out from the equipment. According to the manufacturing method of the tungsten through hole, the tungsten etching efficiency can be effectively improved, the risk of generating defects is reduced, and the yield of chips is improved.

Description

Technical Field

[0001] The invention belongs to the technical field of semiconductor integrated circuit manufacturing, and relates to a method for manufacturing a tungsten through hole. Background Art

[0002] Metal tungsten has been widely used in large-scale integrated circuits as through holes and contact holes between metal layers due to its low resistivity and good high-temperature stability. Its manufacturing process mainly includes two key steps: tungsten film deposition and tungsten film etching, and this process needs to be carried out on two different devices. Due to the involvement of multiple devices, the manufacturing efficiency of tungsten through holes and tungsten contact holes is low, and defects are easily introduced, thus affecting the yield rate of chips.

[0003] Therefore, how to provide a method for manufacturing a tungsten through hole to improve the efficiency of tungsten etching and the yield rate of chips has become an important problem that needs to be solved urgently by those skilled in the art.

[0004] It should be noted that the above introduction to the technical background is only for the convenience of providing a clear and complete description of the technical solutions of the present application and for the convenience of understanding by those skilled in the art. It cannot be considered that the above technical solutions are well known to those skilled in the art simply because they are described in the background technology section of the present application. Summary of the invention

[0005] In view of the above-mentioned shortcomings of the prior art, an object of the present invention is to provide a method for manufacturing a tungsten through hole, so as to solve the problems of low manufacturing efficiency, easy introduction of defects and poor chip yield of the tungsten through hole in the prior art.

[0006] To achieve the above-mentioned object and other related objects, the present invention provides a method for manufacturing a tungsten through hole, comprising the following steps:

[0007] Provided is a device, comprising a first cavity and a second cavity connected through a vacuum transmission channel, wherein a first isolation door is provided between the first cavity and the vacuum transmission channel, a second isolation door is provided between the second cavity and the vacuum transmission channel, and a cooling device is provided inside the vacuum transmission channel;

[0008] Providing a substrate with through holes on its surface, and placing the substrate in the first cavity;

[0009] Introducing a first gas into the first cavity to deposit a tungsten film layer, thereby obtaining an intermediate structure including the substrate and the tungsten film layer, wherein the tungsten film layer covers the surface of the substrate and fills the through hole;

[0010] Performing vacuum pumping to make the first cavity, the vacuum transmission channel and the second cavity reach the same vacuum degree;

[0011] Opening the first isolation door, the cooling device and the second isolation door in a preset order, and transferring the intermediate structure into the second cavity through the vacuum transfer channel within a predetermined cooling time;

[0012] The second isolation door is closed, and a second gas is introduced into the second chamber to etch and remove the tungsten film layer outside the through hole, and at least a portion of the tungsten film layer in the through hole is retained to form a tungsten through hole;

[0013] The vacuum is broken and the substrate having the tungsten through-hole formed therein is taken out from the device.

[0014] Optionally, the base includes a substrate and a dielectric layer located on the substrate, and the through hole is opened in the dielectric layer.

[0015] Optionally, breaking the vacuum and removing the substrate having the tungsten through hole formed thereon from the device comprises the following steps:

[0016] breaking the vacuum of the second cavity;

[0017] The substrate formed with the tungsten through hole is moved out of the second chamber.

[0018] Optionally, the vacuum transfer channel includes a transfer cavity and a third cavity, a third isolation door is provided between the third cavity and the transfer cavity, and breaking the vacuum and taking out the substrate with the tungsten through hole formed thereon from the device includes the following steps:

[0019] Open the second isolation door and the third isolation door in a preset order, and transfer the substrate formed with the tungsten through hole into the third chamber through the transfer chamber;

[0020] closing the second isolation door and the third isolation door to break the vacuum of the third cavity;

[0021] The substrate formed with the tungsten through hole is moved out of the third cavity.

[0022] Optionally, a first RF source and a second RF source are provided in the second cavity, the first RF source is used to ionize the second gas to form plasma, and the second RF source is used to control the plasma to move toward the substrate.

[0023] Optionally, during the etching process, the power range of the first RF source is 100W-3000W, the frequency range of the first RF source is 400Khz-70 Mhz, the power range of the second RF source is 10W-1000W, and the frequency range of the second RF source is 400Khz-70 Mhz.

[0024] Optionally, the first gas includes a deposition gas and an inert gas, the deposition gas includes tungsten hexafluoride and silane, and the inert gas includes at least one of hydrogen, nitrogen, argon and helium.

[0025] Optionally, the second gas includes an etching gas and an inert gas, the etching gas includes sulfur hexafluoride, and the inert gas includes at least one of helium and argon.

[0026] Optionally, the step of transferring the intermediate structure into the second cavity through the vacuum transfer channel comprises:

[0027] Opening the first isolation door to transfer the intermediate structure from the first cavity to the vacuum transfer channel;

[0028] closing the first insulating door, opening the cooling device, cooling the intermediate device, and transferring the intermediate structure to the second insulating door;

[0029] The cooling device is turned off, the second insulating door is opened, and the intermediate structure is placed in the second cavity.

[0030] Optionally, an upper surface of the tungsten through hole is lower than an upper surface of the substrate.

[0031] As described above, the manufacturing method of the tungsten through hole of the present invention includes: providing a device including a first cavity and a second cavity connected by a vacuum transmission channel, and a cooling device is provided in the vacuum transmission channel, placing a substrate with a through hole on the surface in the first cavity, introducing a first gas into the first cavity to deposit a tungsten film layer, obtaining an intermediate structure including a substrate and a tungsten film layer, and the tungsten film layer covers the surface of the substrate and fills the through hole, evacuating the first cavity, the vacuum transmission channel and the second cavity to the same preset vacuum degree, transmitting the intermediate structure to the second cavity through the vacuum transmission channel, introducing a second gas into the second cavity to etch and remove the tungsten film layer outside the through hole to form a tungsten through hole, breaking the vacuum and taking out the substrate with the tungsten through hole from the device. The manufacturing method of the tungsten through hole of the present invention can effectively improve the efficiency of tungsten etching, reduce the risk of defects, and improve the yield rate of chips. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] Figure 1 The schematic diagram shows a structure obtained after forming a substrate, a dielectric layer and a through hole in a tungsten through hole manufacturing method.

[0033] Figure 2 A schematic diagram showing a structure obtained after forming a tungsten film layer in a tungsten through hole manufacturing method.

[0034] Figure 3 A schematic diagram showing a structure obtained after forming a tungsten through hole in a tungsten through hole manufacturing method is shown.

[0035] Figure 4 The process flow chart of the tungsten through hole manufacturing method of the present invention is shown as follows

[0036] Figure 5 It is a schematic structural diagram of the equipment in the method for manufacturing tungsten through-holes of the present invention.

[0037] Figure 6 It is a schematic diagram showing the placement of a substrate in a first cavity in the method for manufacturing a tungsten through hole of the present invention.

[0038] Figure 7 It is a schematic diagram showing the structure obtained after forming a tungsten film layer in the tungsten through hole manufacturing method of the present invention.

[0039] Figure 8 It is a schematic diagram showing the placement of the intermediate structure in the second cavity in the method for manufacturing a tungsten through hole of the present invention.

[0040] Fig. 9 It is a schematic diagram showing a structure obtained after forming a tungsten through hole in the tungsten through hole manufacturing method of the present invention.

[0041] Fig.10 Another schematic diagram of the structure obtained after forming a tungsten through hole in the tungsten through hole manufacturing method of the present invention is shown.

[0042] Fig.11 It is a schematic diagram showing a working state of the equipment in the tungsten through hole manufacturing method of the present invention.

[0043] Description of Reference Numerals

[0044] 101 Substrate

[0045] 102 dielectric layer

[0046] 103 Through Hole

[0047] 104 Deposition Equipment

[0048] 105 Deposition Chamber

[0049] 106 Tungsten film

[0050] 107 Etching Equipment

[0051] 108 Etching chamber

[0052] 109 Tungsten Via

[0053] 201 Base

[0054] 2011 Substrate

[0055] 2012 Dielectric Layer

[0056] 202 Through Hole

[0057] 203 Equipment

[0058] 204 First cavity

[0059] 205 Tungsten Film

[0060] 206 Vacuum transfer channel

[0061] 2061 Transmission Chamber

[0062] 2062 The third cavity

[0063] 2063 The Third Isolation Gate

[0064] 2064 Cooling Device

[0065] 207 Second cavity

[0066] 208 The First Isolation Gate

[0067] 209 Second Isolation Gate

[0068] 210 Tungsten Via

[0069] Steps S1 to S7 DETAILED DESCRIPTION

[0070] See also Figures 1 to 4 , which is a schematic diagram showing the structure of each step of a tungsten through hole manufacturing method, wherein at least the following steps are included:

[0071] (1) Figure 1 As shown, a substrate 101 is first provided, and a dielectric layer 102 is provided on the substrate 101, and a through hole 103 is opened in the dielectric layer 102;

[0072] (2) Figure 2 As shown, the substrate 101 is placed in a deposition chamber 105 in a deposition device 104, and a tungsten film 106 is deposited. The tungsten film 106 covers the dielectric layer 102 and fills the through hole 103, thereby obtaining an intermediate structure.

[0073] (3) Figure 3 As shown, the intermediate structure is then placed in an etching chamber 108 in an etching device 107 , and the tungsten film 106 is etched to form a tungsten through hole 109 .

[0074] The above tungsten through hole manufacturing method involves many devices, which makes the manufacturing efficiency of the tungsten through hole low, and different steps are completed in multiple different devices, each device needs to be vacuumed and broken at least once, which causes the chip to be exposed to the atmosphere for too long when transferred between different devices, thereby increasing the risk of defects and reducing the yield rate of the chip.

[0075] The inventors of the present application have improved the method for preparing tungsten through-holes, so that the tungsten film deposition step and the tungsten film etching step can be completed in one device, thereby improving the tungsten etching efficiency. Only one vacuum breaking is required, which reduces the number of vacuum breakings in the tungsten through-hole manufacturing process, reduces the risk of defects, and improves the chip yield.

[0076] The following describes the embodiments of the present invention through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present invention.

[0077] It should be emphasized that the term “include / comprises” when used herein refers to the presence of features, integers, steps or components, but does not exclude the presence or addition of one or more other features, integers, steps or components.

[0078] Features described and / or illustrated with respect to one embodiment may be used in the same or similar manner in one or more other embodiments, combined with features in other embodiments, or substituted for features in other embodiments.

[0079] For example, when describing the embodiments of the present invention in detail, for the sake of convenience, the schematic diagrams showing the device structure will not be partially enlarged according to the general scale, and the schematic diagrams are only examples, which should not limit the scope of protection of the present invention. In addition, in actual production, the three-dimensional dimensions of length, width and depth should be included.

[0080] For ease of description, spatially relative terms such as "under", "below", "below", "below", "above", "on", etc. may be used herein to describe the relationship of one element or feature shown in the drawings to other elements or features. It will be understood that these spatially relative terms are intended to encompass other orientations of the device in use or operation in addition to the orientation depicted in the drawings. In addition, when a layer is referred to as being "between" two layers, it can be the only layer between the two layers, or one or more intervening layers may also be present.

[0081] In the context of the present application, a structure in which a first feature is described as being "above" a second feature may include embodiments in which the first and second features are in direct contact, and may also include embodiments in which additional features are formed between the first and second features, such that the first and second features may not be in direct contact.

[0082] It should be noted that the illustrations provided in this embodiment are only used to illustrate the basic concept of the present invention in a schematic manner, and therefore the illustrations only show components related to the present invention rather than being drawn according to the number, shape and size of components in actual implementation. In actual implementation, the type, quantity and proportion of each component may be changed arbitrarily, and the component layout may also be more complicated.

[0083] See also Figure 4 , which is a process flow chart of the tungsten through hole manufacturing method of the present invention, comprises the following steps:

[0084] S1: Provide a device, the device comprising a first cavity and a second cavity connected through a vacuum transmission channel, a first isolation door is provided between the first cavity and the vacuum transmission channel, a second isolation door is provided between the second cavity and the vacuum transmission channel, and a cooling device is provided inside the vacuum transmission channel;

[0085] S2: providing a substrate with through holes on its surface, and placing the substrate in the first cavity;

[0086] S3: introducing a first gas into the first chamber to deposit a tungsten film layer, thereby obtaining an intermediate structure including the substrate and the tungsten film layer, wherein the tungsten film layer covers the surface of the substrate and fills the through hole;

[0087] S4: performing vacuuming so that the first cavity, the vacuum transmission channel and the second cavity reach the same vacuum degree;

[0088] S5: opening the first isolation door, the cooling device and the second isolation door in a preset order, and transferring the intermediate structure into the second cavity through the vacuum transfer channel within a predetermined cooling time;

[0089] S6: closing the second isolation door, and introducing a second gas into the second chamber to etch away the tungsten film layer outside the through hole, and retaining at least a portion of the tungsten film layer in the through hole to form a tungsten through hole;

[0090] S7: breaking the vacuum and taking out the substrate having the tungsten through-hole formed thereon from the device.

[0091] The following will be combined Figures 5 to 7 , and detailedly describe the various steps of the tungsten through hole manufacturing method of the present invention.

[0092] First, please refer to Figure 5, execute step S1: provide a device 203, the device 203 includes a first cavity 204 and a second cavity 207 connected by a vacuum transmission channel 206, and a first isolation door 208 is provided between the first cavity 204 and the vacuum transmission channel 206, a second isolation door 209 is provided between the second cavity 207 and the vacuum transmission channel 206, and a cooling device is provided inside the vacuum transmission channel.

[0093] Specifically, the existence of the first isolation door 208 and the second isolation door 209 ensures that the process reaction gases and pressure states in the first chamber 204 and the second chamber 207 do not affect each other. That is, when a tungsten film layer is deposited in the first chamber 204, the reaction gas in the first chamber 204 is blocked by the first isolation door 208 and will not enter the second chamber 207 to affect other subsequent processes. When a tungsten film layer is etched in the second chamber 207, the reaction gas in the second chamber 207 is blocked by the second isolation door 209 and will not leak into the first chamber 204. Please refer to Figure 6 , executing step S2: providing a substrate 201 with a through hole 202 on its surface, and placing the substrate 201 in the first cavity 204;

[0094] As an example, the base 201 includes a substrate 2011 and a dielectric layer 2012 located on the substrate 2011 , and the through hole 202 is opened in the dielectric layer 2012 .

[0095] As an example, the material of the substrate 2011 can be silicon, silicon germanium, silicon carbide or other suitable substrate materials.

[0096] As an example, forming the dielectric layer 2012 on the substrate 2011 includes the following steps:

[0097] (1) cleaning the substrate 2011 to remove dirt on the surface of the substrate 2011;

[0098] (2) The dielectric layer 2012 is deposited on the substrate 2011 by a deposition process. The deposition process may be any one of chemical vapor deposition, physical vapor deposition, low pressure chemical vapor deposition or atomic layer deposition.

[0099] As an example, the material of the dielectric layer 2012 may be one or more of silicon nitride, silicon oxynitride or other dielectric materials. In the present embodiment, the material of the dielectric layer 2012 is silicon oxide.

[0100] As an example, opening the through hole 202 in the dielectric layer 2012 includes the following steps:

[0101] (1) forming a mask layer on the surface of the dielectric layer 2012 by spin coating or other suitable methods;

[0102] (2) patterning the mask layer using a photolithography process;

[0103] (3) Dry etching and / or wet etching is performed on the dielectric layer 2012 based on the patterned mask layer to obtain the through hole 202.

[0104] As an example, the through hole 202 partially penetrates the dielectric layer 2012, and is used to connect electrical components surface-mounted on the substrate 2011 or to connect two adjacent metal conductive layers. In some other embodiments, the through hole 202 may also completely penetrate the dielectric layer 2012, and is used to vertically connect electrical components and metal conductive layers on different layers.

[0105] Please see again Figure 7 , execute the step S3: introduce the first gas into the first cavity 204 to deposit a tungsten film layer, thereby obtaining an intermediate structure including the substrate 201 and the tungsten film layer 205 , wherein the tungsten film layer 205 covers the surface of the substrate 201 and fills the through hole 202 .

[0106] As an example, in the step of depositing the tungsten film layer 205 , the pressure of the first chamber 204 is set to be less than 100000 mT.

[0107] As an example, the first gas includes a deposition gas and an inert gas, the deposition gas includes tungsten hexafluoride and silane, the inert gas includes at least one of hydrogen, nitrogen, argon and helium, and the specific gas combination and ratio in the first gas are not limited and depend on the specific requirements for deposition.

[0108] Specifically, during the deposition of the tungsten film layer 205, tungsten halides are usually used as tungsten source gases. These gases are introduced into the heated first cavity 204, decomposed at a certain temperature or react chemically with other reaction gases, so as to deposit and form the tungsten film layer 205 on the surface of the substrate 201. In this embodiment, tungsten hexafluoride is used as the tungsten source gas, and hydrogen is injected into the second cavity 207. At high temperature, tungsten hexafluoride will decompose to generate tungsten atoms and fluorine atoms. The tungsten atoms generated by the decomposition are the basic substances for forming the tungsten film layer. At the same time, hydrogen reacts with fluorine atoms to generate hydrogen fluoride gas, so that tungsten atoms are deposited on the surface of the substrate 201. As the reaction continues, tungsten atoms are continuously deposited, diffused and crystallized on the surface of the substrate 201, so as to gradually form the continuous tungsten film layer 205.

[0109] Please see again Figure 7, execute the step S4: evacuate the first cavity 204, the vacuum transfer channel 206 and the second cavity 207 to achieve the same vacuum degree, so that the first cavity 204, the vacuum transfer channel 206 and the second cavity 207 together constitute a transfer space that is always in a vacuum state, thereby improving the quality of the tungsten film layer 205. This is because if the substrate 201 is in contact with the outside air, it is easy to introduce impurity defects, causing the tungsten film layer 205 to oxidize, thereby reducing the quality of the tungsten film layer 205.

[0110] As an example, after the vacuuming step, the vacuum degree of the first cavity 204 may range from 0Pa to 133Pa, for example, 30Pa, 45Pa, 55Pa, 90Pa, 115Pa, 130Pa, etc., the vacuum degree of the vacuum transfer channel 206 may range from 0Pa to 133Pa, for example, 30Pa, 45Pa, 55Pa, 90Pa, 115Pa, 130Pa, etc., and the vacuum degree of the second cavity 207 may range from 0Pa to 133Pa, for example, 30Pa, 45Pa, 55Pa, 90Pa, 115Pa, 130Pa, etc.

[0111] As an example, when performing the vacuum pumping step, the first cavity 204, the vacuum transfer channel 206 and the second cavity 207 respectively have respective exhaust ports and vacuum pumping devices, that is, three independently working vacuum pumps, and the three vacuum pumps perform exhaust simultaneously, so that the first cavity 204, the vacuum transfer channel 206 and the second cavity 207 are all in the same vacuum state. The exhaust step is performed after the deposition of the tungsten film layer 205 is completed, so that the first gas remaining in the first cavity 204 can also be extracted from the first cavity 204 while the vacuum pumping is performed, thereby preventing cross contamination between the first cavity 204 and the second cavity 207.

[0112] Please see again Figure 8 , perform step S5: open the first isolation door 208, the cooling device and the second isolation door 209 in a preset order, and transfer the intermediate structure to the second cavity 207 through the vacuum transfer channel 206 within a predetermined cooling time. As an example, the step of transferring the intermediate structure to the second cavity 207 through the vacuum transfer channel 206 includes:

[0113] (1) opening the first isolation door 208 to transfer the intermediate structure from the first chamber 204 to the vacuum transfer channel 206;

[0114] (2) closing the first isolation door 208, opening the cooling device, cooling the intermediate structure, and transferring the intermediate structure to the second isolation door 209;

[0115] (3) Turn off the cooling device, open the second isolation door 209 , and place the intermediate structure in the second cavity 207 .

[0116] Specifically, the temperature of the deposition process in the first cavity 204 is relatively high. After the tungsten film layer 205 is formed on the substrate 201, in order to avoid affecting the subsequent processes, the intermediate structure needs to be cooled. The cooling device is located in the vacuum transfer channel 206, and can reduce the intermediate structure to the required low temperature state within a predetermined cooling time. During the cooling process, the robotic arm in the vacuum transfer channel 206 will transfer the intermediate structure to the second cavity 207, thereby shortening the entire process time and improving the preparation efficiency of the tungsten through hole. In this embodiment, the cooling device uses gas (such as nitrogen) as a cooling medium, and works in conjunction with the vacuum pump of the vacuum transfer channel 206 to ensure that the vacuum degree of the vacuum transfer channel 206 remains within the required range.

[0117] As an example, the diameter of the vacuum delivery channel 206 is greater than the height of the intermediate structure.

[0118] As an example, the first cavity 204 has a first supporting platform, and the first supporting platform is used to support and fix the substrate 201. The second cavity 207 has a second supporting platform, and the first supporting platform is used to support and fix the intermediate structure. The vacuum transfer channel 206 is on the same horizontal plane as the first supporting platform and the second supporting platform, so that the intermediate structure on which the tungsten film layer 205 is deposited in the first cavity 204 can be more conveniently transferred to the second cavity 207.

[0119] As an example, the transmission method of the vacuum channel can be any one of conveyor belt transmission, robotic arm transmission and electromagnetic transmission. In this embodiment, the intermediate structure is transmitted by a robotic arm, and the first cavity 204, the vacuum transmission channel 206 and the second cavity 207 are provided with robotic arms (not shown in the figure) that cooperate with each other to transmit the intermediate structure, so as to realize the transmission of the intermediate structure.

[0120] Please see again Fig. 9 , execute the step S6: close the second isolation door 109, and introduce the second gas into the second chamber 207 to etch and remove the tungsten film layer 205 outside the through hole 202, and at least a portion of the tungsten film layer 205 in the through hole 202 is retained to form a tungsten through hole 210.

[0121] As an example, a first RF source and a second RF source are disposed in the second cavity 207 , wherein the first RF source is used to ionize the second gas to form plasma, and the second RF source is used to control the plasma to move toward the substrate 201 .

[0122] As an example, during the etching of the tungsten film layer 205, the power range of the first RF source is 100W to 3000W, such as 200W, 500W, 1200W, 1700W, 2400W, 2700W, etc., and the frequency range of the first RF source is 400Khz to 70Mhz, such as 700Khz, 950Khz, 2000Khz, 5Mhz, 12Mhz. , 30Mhz, 45Mhz, etc., the power range of the second RF source is 10W~1000W, for example, 20W, 50W, 120W, 370W, 640W, 870W, etc., and the frequency range of the second RF source is 400Khz~70Mhz, for example, 700Khz, 950Khz, 2000Khz, 5Mhz, 12Mhz, 30Mhz, 45Mhz, etc.

[0123] As an example, in the step of etching the tungsten film layer 205 , the pressure of the second chamber 207 is set to be less than 1000 mT.

[0124] As an example, the second gas includes an etching gas and an inert gas, the etching gas includes sulfur hexafluoride, and the inert gas includes at least one of helium and argon. The specific gas combination and ratio in the second gas are not limited and depend on the specific requirements for etching. In the present embodiment, the etching gas includes sulfur hexafluoride and oxygen, and the inert gas includes argon. The flow rate range of sulfur hexafluoride is 10 sccm to 100 sccm, such as 30 sccm, 45 sccm, 75 sccm, 90 sccm, etc., and the flow rate range of argon is 100 sccm to 1000 sccm, such as 300 sccm, 450 sccm, 550 sccm, 850 sccm, 900 sccm, etc. In other embodiments, the etching gas may only include sulfur hexafluoride.

[0125] Then, the step S7 is performed: breaking the vacuum and taking out the substrate 201 with the tungsten through hole 210 formed thereon from the device 203 .

[0126] As an example, see Fig. 9 , breaking the vacuum and taking out the substrate 201 formed with the tungsten through hole 210 from the device 203 comprises the following steps:

[0127] (1) breaking the vacuum of the second cavity 207 (i.e., restoring the second cavity 207 to atmospheric pressure);

[0128] (2) The substrate 201 formed with the tungsten through hole 210 is moved out of the second chamber 207 .

[0129] Specifically, the first cavity 204 and the second cavity 207 are located in the same device 203, the intermediate structure is transferred by the vacuum transfer channel 206, and the deposition step of the tungsten film layer 205 and the etching step of the tungsten film layer 205 are completed in one device, thereby improving the etching efficiency of the tungsten film layer 205. In addition, the entire manufacturing method only needs to break the vacuum once, thereby avoiding the tungsten through hole 210 from contacting external gas during the preparation process, reducing the risk of defects, and improving the yield rate of the chip requiring the tungsten through hole 210.

[0130] Specifically, when the vacuum breaking operation is performed on the second cavity 207, the vacuum transfer channel 206 still maintains a vacuum state. In the case where the tungsten through hole 210 needs to be prepared multiple times, the substrate 201 can be placed in the second cavity 207 in the vacuum breaking state. It is only necessary to evacuate the second cavity 207 and then transfer the substrate 201 to the first cavity 204 through the vacuum transfer channel 206 for the preparation process, which can further reduce the number of vacuuming times and improve work efficiency.

[0131] As an example, see Fig.10 In another embodiment, the vacuum transfer channel 206 includes a transfer cavity 2061 and a third cavity 2062, a third isolation door 2063 is provided between the third cavity 2062 and the transfer cavity 2061, the cooling device 2064 is located in the transfer cavity 2061, and breaking the vacuum and taking out the substrate 201 formed with the tungsten through hole 210 from the device 203 includes the following steps:

[0132] (1) opening the second isolation door 209 and the third isolation door 2063 in a preset order, and transferring the substrate 201 formed with the tungsten through hole 210 to the third chamber 2062 through the transfer chamber 2051;

[0133] (2) closing the second isolating door 209 and the third isolating door 2063 to break the vacuum of the third chamber 2062 (i.e., restoring the third chamber 2062 to atmospheric pressure);

[0134] (3) The substrate 201 formed with the tungsten through hole 210 is moved out of the third cavity 2062 .

[0135] Specifically, the third cavity 2062 is used to take and place the substrate 201, and the transfer cavity 2061, the first cavity 204 and the second cavity 207 are always kept in a vacuum state. The entire manufacturing method only needs to break the vacuum once, which avoids the tungsten through hole 210 from contacting external gas during the preparation process, reduces the risk of defects, and improves the yield rate of the chip requiring the tungsten through hole 210. In addition, please refer to Fig.11 , which is a schematic diagram of a working state of the equipment in the tungsten through hole manufacturing method of the present invention. After the intermediate structure is transferred to the second chamber 207, the new substrate 201 to be processed can enter the first chamber 204 through the third chamber 2062 and the transfer chamber 2061 for deposition, which can further improve the preparation efficiency of the tungsten through hole 210. That is, the first chamber 204 and the second chamber 207 can work at the same time, which can further shorten the time when batch processing products and improve the processing efficiency of products.

[0136] As an example, the upper surface of the tungsten through hole 210 is lower than the upper surface of the substrate 201 , so that the tungsten film layer 205 on the dielectric layer 2012 can be completely removed to prevent the tungsten film layer 205 from remaining and affecting the performance of the chip.

[0137] In summary, the manufacturing method of the tungsten through hole of the present invention includes: providing a device including a first cavity and a second cavity connected by a vacuum transmission channel, and a cooling device is provided in the vacuum transmission channel, placing a substrate with a through hole on the surface in the first cavity, introducing a first gas into the first cavity to deposit a tungsten film layer, obtaining an intermediate structure including a substrate and a tungsten film layer, and the tungsten film layer covers the surface of the substrate and fills the through hole, evacuating the first cavity, the vacuum transmission channel and the second cavity to the same preset vacuum degree, transmitting the intermediate structure to the second cavity through the vacuum transmission channel, introducing a second gas into the second cavity to etch and remove the tungsten film layer outside the through hole to form a tungsten through hole, breaking the vacuum and taking out the substrate with the tungsten through hole from the device. The manufacturing method of the tungsten through hole of the present invention can effectively reduce the number of vacuum breaks in the reaction chamber, improve the efficiency of tungsten etching, reduce the risk of defects, and improve the yield rate of the chip. Therefore, the present invention effectively overcomes the various shortcomings of the prior art and has a high industrial utilization value.

[0138] The above embodiments are merely illustrative of the principles and effects of the present invention, and are not intended to limit the present invention. Anyone familiar with the art may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by a person of ordinary skill in the art without departing from the spirit and technical concept disclosed by the present invention shall still be covered by the claims of the present invention.

Claims

1. A method for manufacturing a tungsten through hole, characterized in that: The following steps are involved: Provided is a device, comprising a first cavity and a second cavity connected through a transfer channel, a first isolation door is provided between the first cavity and the vacuum transfer channel, a second isolation door is provided between the second cavity and the vacuum transfer channel, and a cooling device is provided inside the vacuum transfer channel; Providing a substrate with through holes on its surface, and placing the substrate in the first cavity; Introducing a first gas into the first cavity to deposit a tungsten film layer, thereby obtaining an intermediate structure including the substrate and the tungsten film layer, wherein the tungsten film layer covers the surface of the substrate and fills the through hole; Performing vacuum pumping to make the first cavity, the vacuum transmission channel and the second cavity reach the same vacuum degree; Opening the first isolation door, the cooling device and the second isolation door in a preset order, and transferring the intermediate structure into the second cavity through the vacuum transfer channel within a predetermined cooling time; The second isolation door is closed, and a second gas is introduced into the second chamber to etch and remove the tungsten film layer outside the through hole, and at least a portion of the tungsten film layer in the through hole is retained to form a tungsten through hole; The vacuum is broken and the substrate having the tungsten through-hole formed therein is taken out from the device.

2. The method for manufacturing a tungsten through hole according to claim 1, characterized in that: The base comprises a substrate and a dielectric layer located on the substrate, and the through hole is opened in the dielectric layer.

3. The method for manufacturing a tungsten through hole according to claim 1, characterized in that: Breaking the vacuum and taking out the substrate having the tungsten through hole formed thereon from the device comprises the following steps: breaking the vacuum of the second cavity; The substrate formed with the tungsten through hole is moved out of the second chamber.

4. The method for manufacturing a tungsten through hole according to claim 1, characterized in that: The vacuum transmission channel includes a transmission cavity and a third cavity, a third isolation door is provided between the third cavity and the transmission cavity, and breaking the vacuum and taking out the substrate with the tungsten through hole formed therein from the device includes the following steps: Open the second isolation door and the third isolation door in a preset order, and transfer the substrate formed with the tungsten through hole into the third chamber through the transfer chamber; closing the second isolation door and the third isolation door to break the vacuum of the third cavity; The substrate formed with the tungsten through hole is moved out of the third cavity.

5. The method for manufacturing a tungsten through hole according to claim 1, characterized in that: A first RF source and a second RF source are disposed in the second cavity. The first RF source is used to ionize the second gas to form plasma, and the second RF source is used to control the plasma to move toward the substrate.

6. The method for manufacturing a tungsten through hole according to claim 5, characterized in that: During the etching process, the power range of the first RF source is 100W-3000W, the frequency range of the first RF source is 400Khz-70 Mhz, the power range of the second RF source is 10W-1000W, and the frequency range of the second RF source is 400Khz-70 Mhz.

7. The method for manufacturing a tungsten through hole according to claim 1, characterized in that: The first gas includes a deposition gas and an inert gas. The deposition gas includes tungsten hexafluoride and silane. The inert gas includes at least one of hydrogen, nitrogen, argon and helium.

8. The method for manufacturing a tungsten through hole according to claim 1, characterized in that: The second gas includes an etching gas and an inert gas, the etching gas includes sulfur hexafluoride, and the inert gas includes at least one of helium and argon.

9. The method for manufacturing a tungsten through hole according to claim 1, characterized in that: The step of transferring the intermediate structure into the second cavity through the vacuum transfer channel comprises: Opening the first isolation door to transfer the intermediate structure from the first cavity to the vacuum transfer channel; closing the first insulating door, opening the cooling device, cooling the intermediate structure, and transferring the intermediate structure to the second insulating door; The cooling device is turned off, the second insulating door is opened, and the intermediate structure is placed in the second cavity.

10. The method for manufacturing a tungsten through hole according to claim 1, characterized in that: An upper surface of the tungsten through hole is lower than an upper surface of the substrate.

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