Semiconductor laser chip with lower waveguide layer for inhibiting space hole burning

Abstract

The semiconductor laser chip comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer and an upper limiting layer in sequence from bottom to top, and the lower waveguide layer is the lower waveguide layer for inhibiting space hole burning; the lower waveguide layer for inhibiting space hole burning comprises a first lower waveguide layer for inhibiting space hole burning and a second lower waveguide layer for inhibiting space hole burning; the descending angle from the peak position of the volume elastic modulus of the first suppression space hole burning lower waveguide layer to the direction of the lower limiting layer is alpha, and the ascending angle from the valley position of the volume elastic modulus of the second suppression space hole burning lower waveguide layer to the direction of the lower limiting layer is beta. By designing the volume elastic modulus, density change angle and distribution of the first suppression space hole-burning lower waveguide layer and the second suppression space hole-burning lower waveguide layer, the problems of dislocation density uniformity, fault uniformity and the like in the active layer and the waveguide layer are reduced.

Description

Technical Field

[0001] The invention relates to the technical field of semiconductor optoelectronic devices, in particular to a semiconductor laser chip with a lower waveguide layer for suppressing spatial hole burning. Background Art

[0002] Lasers are widely used in laser display, laser TV, laser projector, communication, medical treatment, weapons, guidance, ranging, spectral analysis, cutting, precision welding, high-density optical storage and other fields. There are many types of lasers, and the classification methods are also diverse, mainly including solid, gas, liquid, semiconductor and dye types of lasers; compared with other types of lasers, all-solid-state semiconductor ultraviolet lasers have the advantages of small size, high efficiency, light weight, good stability, long life, simple and compact structure, and miniaturization.

[0003] There are significant differences between lasers and nitride semiconductor light-emitting diodes.

[0004] 1) Laser is generated by stimulated radiation of carriers, the spectrum half-width is small, the brightness is very high, and the output power of a single laser can be in the W level, while nitride semiconductor light-emitting diodes are spontaneously radiated, and the output power of a single light-emitting diode is in the mW level;

[0005] 2) The current density of the laser is up to KA / cm 2 , which is more than 2 orders of magnitude higher than that of nitride light-emitting diodes, resulting in stronger electron leakage, more serious Auger recombination, stronger polarization effect, more serious electron-hole mismatch, and more serious efficiency attenuation Droop effect;

[0006] 3) The spontaneous transition radiation of the light-emitting diode is incoherent light that transitions from a high energy level to a low energy level without any external influence, while the laser is stimulated transition radiation, and the energy of the induced photon should be equal to the difference in the energy level of the electron transition, producing the same coherent light as the photon and the induced photon;

[0007] 4) Different principles: When an external voltage is applied to a light-emitting diode, electron holes jump to the active layer or pn junction to produce radiative recombination light, while a laser can only emit when the lasing conditions are met. The carrier distribution in the active region must be reversed, and the stimulated radiation light oscillates back and forth in the resonant cavity. The propagation in the gain medium amplifies the light, and the threshold condition is met so that the gain is greater than the loss, and finally the laser is output.

[0008] Nitride semiconductor ultraviolet lasers have the following problems: spatial hole burning effect, the interaction between carriers and lasing modes causes a gain saturation effect, the carrier distribution is distorted by the field, causing the refractive index waveguide to change and produce a light field contraction process; frequency hole burning effect, the effect of reducing standing waves due to the interaction between the resonant cavity and the active area material. The inversion of the number distribution of particles in the active layer is spatially uneven, the spatial distribution of the carrier concentration of radiation recombination is uneven, and the standing wave excited in the resonant cavity interferes with the inversion of the number distribution of particles, causing frequency hole burning in the local gain spectrum to produce a spatial hole burning effect, making the laser spectrum wider and containing several modes in the emitted light wave; as the current increases, the stimulated radiation is enhanced, and the carrier concentration in the center of the active area decreases, which will also cause spatial hole burning in the local gain distribution and reduce the gain-guided waveguide effect. Summary of the invention

[0009] The present invention proposes a semiconductor laser chip with a lower waveguide layer for suppressing spatial hole burning. By designing the bulk elastic modulus and density variation angle and distribution of the first lower waveguide layer for suppressing spatial hole burning and the second lower waveguide layer for suppressing spatial hole burning, the problems of uniformity of dislocation density and uniformity of stacking faults in the active layer and the waveguide layer are reduced.

[0010] The present invention provides a semiconductor laser chip with a lower waveguide layer for suppressing spatial hole burning, which comprises, from bottom to top, a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer, and an upper limiting layer, wherein the lower waveguide layer is a lower waveguide layer for suppressing spatial hole burning; the lower waveguide layer for suppressing spatial hole burning comprises a first lower waveguide layer for suppressing spatial hole burning and a second lower waveguide layer for suppressing spatial hole burning;

[0011] The peak position of the bulk elastic modulus of the first waveguide layer under the spatial hole burning suppression has a descending angle α toward the lower limiting layer, the valley position of the bulk elastic modulus of the second waveguide layer under the spatial hole burning suppression has a rising angle β toward the lower limiting layer, and the peak position of the bulk elastic modulus of the second waveguide layer under the spatial hole burning suppression has a descending angle γ toward the active layer, wherein: 30°≤β≤γ≤α≤90°, the angle is the inclination angle of the tangent along the curve;

[0012] The descending angle of the peak position of the density of the waveguide layer under the first spatial hole burning suppression toward the lower limiting layer is θ, the descending angle of the peak position of the density of the waveguide layer under the second spatial hole burning suppression toward the lower limiting layer is δ, and the rising angle of the valley position of the density of the waveguide layer under the second spatial hole burning suppression toward the active layer is σ, wherein: 20°≤δ≤σ≤θ≤90°;

[0013] The rising angle of the valley position of the separation energy of the waveguide layer under the first spatial hole burning suppression toward the lower limiting layer is φ, the rising angle of the valley position of the separation energy of the waveguide layer under the second spatial hole burning suppression toward the lower limiting layer is ψ, and the descending angle of the peak position of the separation energy of the waveguide layer under the second spatial hole burning suppression toward the active layer is μ, wherein: 25°≤ψ≤μ≤φ≤90°;

[0014] The rising angle of the valley position of the polarization optical phonon energy of the first spatial hole burning suppression waveguide layer toward the lower limiting layer is ρ, the rising angle of the valley position of the polarization optical phonon energy of the second spatial hole burning suppression waveguide layer toward the lower limiting layer is ω, and the falling angle of the peak position of the polarization optical phonon energy of the second spatial hole burning suppression waveguide layer toward the active layer is ε, wherein: 15°≤ω≤ε≤ρ≤90°.

[0015] Preferably, the volume elastic modulus of the waveguide layer under the first suppression of spatial hole burning, the descending angle of the peak position of the density toward the lower limiting layer, and the rising angle of the valley position of the separation energy and polarization optical phonon energy of the waveguide layer under the first suppression of spatial hole burning toward the lower limiting layer have the following relationship: 15°≤ρ≤θ≤φ≤α≤90°.

[0016] Preferably, the rising angle of the valley position of the volume elastic modulus, separation energy and polarization optical phonon energy of the second waveguide layer under the spatial hole burning suppression toward the lower limiting layer, and the descending angle of the peak position of the density of the second waveguide layer under the spatial hole burning suppression toward the lower limiting layer have the following relationship: 5°≤ω≤δ≤ψ≤β≤90°.

[0017] Preferably, the descending angle of the peak position of the volume elastic modulus, separation energy and polarization optical phonon energy of the waveguide layer under the second spatial hole burning suppression toward the active layer, and the rising angle of the valley position of the density of the waveguide layer under the second spatial hole burning suppression toward the active layer have the following relationship: 10°≤ε≤σ≤μ≤γ≤90°.

[0018] Preferably, the descending angle of the peak position of the volume elastic modulus and density of the waveguide layer under the first spatial hole burning suppression toward the lower limiting layer, the rising angle of the valley position of the separation energy and polarization optical phonon energy of the waveguide layer under the first spatial hole burning suppression toward the lower limiting layer, the rising angle of the volume elastic modulus, separation energy, and valley position of the polarization optical phonon energy of the waveguide layer under the second spatial hole burning suppression toward the lower limiting layer, the descending angle of the peak position of the density of the waveguide layer under the second spatial hole burning suppression toward the lower limiting layer, the descending angle of the volume elastic modulus, separation energy, and peak position of the polarization optical phonon energy of the waveguide layer under the second spatial hole burning suppression toward the active layer, and the rising angle of the valley position of the density of the waveguide layer under the second spatial hole burning suppression toward the active layer have the following relationship: 5°≤ω≤δ≤ψ≤β≤ε≤σ≤μ≤γ≤ρ≤θ≤φ≤α≤90°.

[0019] Preferably, the lower waveguide layer for suppressing spatial hole burning is any one or any combination of InGaN, GaN, InN, AlInGaN, AlInN, InGaN / GaN superlattice, InGaN / AlGaN superlattice, InGaN / AlInGaN superlattice, InGaN / AlInN superlattice, GaN / AlGaN superlattice, and GaN / AlInGaN superlattice, and has a thickness of 10 to 1000 nm.

[0020] Preferably, the bulk elastic modulus distribution of the first waveguide layer under the spatial hole burning suppression is a linear function distribution, and the bulk elastic modulus distribution of the second waveguide layer under the spatial hole burning suppression has a function y=A+B*a x (a>1) curve distribution; the density distribution of the waveguide layer under the first suppression of spatial hole burning is a linear function distribution, and the density distribution of the waveguide layer under the second suppression of spatial hole burning has a function y=C+D*x -b (b>1 odd number) the third quadrant curve distribution; the separation energy distribution of the first waveguide layer under the suppression of spatial hole burning is a linear function distribution, and the separation energy distribution of the second waveguide layer under the suppression of spatial hole burning has a function y=E+F*c x (c>1) curve distribution; the polarization optical phonon energy distribution of the first waveguide layer under the spatial hole burning suppression is a line number function distribution, and the polarization optical phonon energy distribution of the second waveguide layer under the spatial hole burning suppression has a function y=G+H*d x (d>1) curve distribution; the volume elastic modulus distribution, density distribution, separation energy distribution, and polarization optical phonon energy distribution of the second waveguide layer under the spatial hole burning suppression have the following relationship: d≤b≤c≤a, and C≤E≤G≤A.

[0021] Preferably, the active layer is a periodic structure composed of a well layer and a barrier layer, the number of periods is 3≥m≥1, and the well layer is any one of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, diamond or the like. Any combination, with a thickness of 10 to 100 angstroms, and the barrier layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, with a thickness of 10 to 200 angstroms.

[0022] Preferably, the lower limiting layer, the lower waveguide layer, the electron blocking layer and the upper limiting layer are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN and diamond.

[0023] Preferably, the substrate comprises sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, Mo, TiW, CuW, Cu, sapphire / AlN composite substrate, diamond, graphene, sapphire / SiN x , Sapphire / SiO2 / SiN x Composite substrate, sapphire / SiN x Any one of a / SiO2 composite substrate, a magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

[0024] Compared with the prior art, the semiconductor laser chip with a lower waveguide layer for suppressing spatial hole burning provided by an embodiment of the present invention has the beneficial effect of: by designing the volume elastic modulus and density change angle and distribution of the first lower waveguide layer for suppressing spatial hole burning and the second lower waveguide layer for suppressing spatial hole burning, the problems of uniformity of dislocation density and uniformity of stacking faults in the active layer and the waveguide layer are reduced, the frequency hole burning caused by the interaction between the lower waveguide light field and the resonant cavity, which causes the reduction of standing waves, is reduced, the light field contraction effect is suppressed, and the spatial hole burning and mode hopping problems are suppressed.

[0025] At the same time, the change angle and distribution of the separation energy and polarization optical phonon energy of the first lower waveguide layer for suppressing spatial hole burning and the second lower waveguide layer for suppressing spatial hole burning are designed to reduce the phonon-induced interface state density between the lower waveguide layer and the active layer, reduce the distortion of the carrier distribution caused by the field, improve the spatial uniformity of the inversion of the particle number distribution, enhance the uniformity of the spatial distribution of the carrier concentration of laser radiation recombination, suppress the frequency hole burning and spatial hole burning problems caused by the local gain spectrum of the laser, improve the injection and transport efficiency of the carriers, further improve the laser light power and improve the aging light attenuation, and reduce the threshold current density of the laser. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 1 is a schematic structural diagram of a semiconductor laser chip with a lower waveguide layer for suppressing spatial hole burning according to an embodiment of the present invention;

[0027] Figure 2 This is a SIMS secondary ion mass spectrum of the structure of a semiconductor laser chip with a lower waveguide layer for suppressing spatial hole burning according to an embodiment of the present invention;

[0028] Figure 3 This is a SIMS secondary ion mass spectrum of a semiconductor laser chip having a lower waveguide layer for suppressing spatial hole burning according to an embodiment of the present invention (partially enlarged view);

[0029] Figure 4 This is a TEM lens electron microscope image of a semiconductor laser chip having a lower waveguide layer for suppressing spatial hole burning according to an embodiment of the present invention;

[0030] Figure 5 This is a TEM lens electron microscope image (partial magnified image) of a semiconductor laser chip having a lower waveguide layer for suppressing spatial hole burning according to an embodiment of the present invention;

[0031] Figure 6 This is a TEM lens electron microscope image (partial magnified image) of a semiconductor laser chip having a lower waveguide layer for suppressing spatial hole burning according to an embodiment of the present invention;

[0032] Figure 7 This is a TEM lens electron microscope image (partial magnified image) of a semiconductor laser chip having a lower waveguide layer for suppressing spatial hole burning according to an embodiment of the present invention;

[0033] Figure 8 This is a TEM lens electron microscope image (partial magnified image) of a semiconductor laser chip having a lower waveguide layer for suppressing spatial hole burning according to an embodiment of the present invention;

[0034] Fig. 9 This is a TEM lens electron microscope image (partial magnified image) of a semiconductor laser chip having a lower waveguide layer for suppressing spatial hole burning according to an embodiment of the present invention;

[0035] Reference numerals: 100: substrate; 101: lower confinement layer; 102: lower waveguide layer; 103: active layer; 104: upper waveguide layer, 105: electron blocking layer, 106: upper confinement layer. DETAILED DESCRIPTION

[0036] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0037] In order to solve the above problems, a semiconductor laser chip with a lower waveguide layer for suppressing spatial hole burning provided in an embodiment of the present application will be introduced and described in detail through the following specific embodiments.

[0038] Reference Figure 1-9 The present invention provides a semiconductor laser chip with a lower waveguide layer for suppressing spatial hole burning, which comprises, from bottom to top, a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106, wherein the lower waveguide layer 102 is a lower waveguide layer for suppressing spatial hole burning; the lower waveguide layer for suppressing spatial hole burning comprises a first lower waveguide layer for suppressing spatial hole burning and a second lower waveguide layer for suppressing spatial hole burning;

[0039] The peak position of the bulk elastic modulus of the first waveguide layer under the spatial hole burning suppression has a descending angle α toward the lower limiting layer 101, the valley position of the bulk elastic modulus of the second waveguide layer under the spatial hole burning suppression has a rising angle β toward the lower limiting layer 101, and the peak position of the bulk elastic modulus of the second waveguide layer under the spatial hole burning suppression has a descending angle γ toward the active layer 103, wherein: 30°≤β≤γ≤α≤90°, and the angle is the inclination angle of the tangent along the curve;

[0040] The peak value position of the density of the waveguide layer under the first spatial hole burning suppression has a descending angle of θ toward the lower limiting layer 101, the peak value position of the density of the waveguide layer under the second spatial hole burning suppression has a descending angle of δ toward the lower limiting layer 101, and the valley value position of the density of the waveguide layer under the second spatial hole burning suppression has a rising angle of σ toward the active layer 103, wherein: 20°≤δ≤σ≤θ≤90°;

[0041] The rising angle of the valley position of the separation energy of the waveguide layer under the first spatial hole burning suppression toward the lower limiting layer 101 is φ, the rising angle of the valley position of the separation energy of the waveguide layer under the second spatial hole burning suppression toward the lower limiting layer 101 is ψ, and the falling angle of the peak position of the separation energy of the waveguide layer under the second spatial hole burning suppression toward the active layer 103 is μ, wherein: 25°≤ψ≤μ≤φ≤90°;

[0042] The rising angle of the valley position of the polarization optical phonon energy of the waveguide layer under the first spatial hole burning suppression toward the lower limiting layer 101 is ρ, the rising angle of the valley position of the polarization optical phonon energy of the waveguide layer under the second spatial hole burning suppression toward the lower limiting layer 101 is ω, and the falling angle of the peak position of the polarization optical phonon energy of the waveguide layer under the second spatial hole burning suppression toward the active layer 103 is ε, wherein: 15°≤ω≤ε≤ρ≤90°.

[0043] The volume elastic modulus of the waveguide layer under the first spatial hole burning suppression layer, the descending angle of the peak position of the density toward the lower limiting layer 101, and the rising angle of the valley position of the separation energy and polarization optical phonon energy of the waveguide layer under the first spatial hole burning suppression layer toward the lower limiting layer 101 have the following relationship: 15°≤ρ≤θ≤φ≤α≤90°.

[0044] The rising angle of the valley position of the volume elastic modulus, separation energy, and polarization optical phonon energy of the waveguide layer under the second spatial hole burning suppression method toward the lower limiting layer 101, and the descending angle of the peak position of the density of the waveguide layer under the second spatial hole burning suppression method toward the lower limiting layer 101 have the following relationship: 5°≤ω≤δ≤ψ≤β≤90°.

[0045] The descending angle of the peak position of the volume elastic modulus, separation energy, and polarization optical phonon energy of the waveguide layer under the second spatial hole burning suppression toward the active layer 103, and the rising angle of the valley position of the density of the waveguide layer under the second spatial hole burning suppression toward the active layer 103 have the following relationship: 10°≤ε≤σ≤μ≤γ≤90°.

[0046] The first method for suppressing the spatial hole burning has the following relationship: a decreasing angle of the peak position of the volume elastic modulus and density of the waveguide layer under the spatial hole burning suppression toward the lower limiting layer 101, a rising angle of the valley position of the separation energy and polarization optical phonon energy of the waveguide layer under the spatial hole burning suppression toward the lower limiting layer 101, a decreasing angle of the peak position of the density of the waveguide layer under the spatial hole burning suppression toward the lower limiting layer 101, a decreasing angle of the volume elastic modulus, separation energy and peak position of the polarization optical phonon energy of the waveguide layer under the spatial hole burning suppression toward the active layer 103, and a rising angle of the valley position of the density of the waveguide layer under the spatial hole burning suppression toward the active layer 103: 5°≤ω≤δ≤ψ≤β≤ε≤σ≤μ≤γ≤ρ≤θ≤φ≤α≤90°.

[0047] The present invention reduces the problems of uniformity of dislocation density and uniformity of stacking faults in the active layer and the waveguide layer by designing the volume elastic modulus and density variation angle and distribution of the first and second lower waveguide layers for suppressing spatial hole burning, reduces the frequency hole burning caused by the interaction between the lower waveguide light field and the resonant cavity, suppresses the light field contraction effect, and suppresses the problems of spatial hole burning and mode hopping.

[0048] At the same time, the separation energy and polarization optical phonon energy change angle and distribution of the first and second waveguide layers for suppressing spatial hole burning are designed to reduce the phonon-induced interface state density between the lower waveguide layer and the active layer, reduce the distortion of the carrier distribution caused by the field, improve the spatial uniformity of the inversion of the number of particles, enhance the uniformity of the spatial distribution of the carrier concentration of laser radiation recombination, suppress the frequency hole burning and spatial hole burning caused by the local gain spectrum of the laser, and improve the injection and transport efficiency of carriers, further improve the laser light power and improve the aging light decay, and reduce the threshold current density of the laser. The specific comparison data is shown in the following table:

[0049] project Conventional laser Laser of the present invention Range of change Slope efficiency (W / A) 1.32 2.07 57％ 10000H aging light decay 26％ 5％ -81％ <![CDATA[Threshold current density (kA / cm 2 )]]> 2.4 0.86 -64％ Optical power(W) 4.8 7.69 60％

[0050] In the present invention, the active layer 103 is a periodic structure composed of a well layer and a barrier layer, the number of periods is 3≥m≥1, and the well layer is any one of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond. The barrier layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, with a thickness of 10 to 200 angstroms.

[0051] In the present invention, the lower confinement layer 101, the lower waveguide layer 102, the electron blocking layer 105, and the upper confinement layer 106 are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond.

[0052] In the present invention, the substrate 100 includes sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, Mo, TiW, CuW, Cu, sapphire / AlN composite substrate, diamond, graphene, sapphire / SiN x , Sapphire / SiO2 / SiN x Composite substrate, sapphire / SiN x Any one of a / SiO2 composite substrate, a magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

[0053] The above is only a preferred embodiment of the present invention. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the technical principles of the present invention. These improvements and modifications should also be regarded as the scope of protection of the present invention.

Claims

1. A semiconductor laser chip having a lower waveguide layer for suppressing spatial hole burning, comprising, from bottom to top, a substrate (100), a lower confinement layer (101), a lower waveguide layer (102), an active layer (103), an upper waveguide layer (104), an electron blocking layer (105), and an upper confinement layer (106), characterized in that: The lower waveguide layer (102) is a lower waveguide layer for suppressing spatial hole burning; the lower waveguide layer for suppressing spatial hole burning comprises a first lower waveguide layer for suppressing spatial hole burning and a second lower waveguide layer for suppressing spatial hole burning; The peak position of the bulk elastic modulus of the first waveguide layer under the spatial hole burning suppression has a descending angle α toward the lower limiting layer (101), the valley position of the bulk elastic modulus of the second waveguide layer under the spatial hole burning suppression has a rising angle β toward the lower limiting layer (101), and the peak position of the bulk elastic modulus of the second waveguide layer under the spatial hole burning suppression has a descending angle γ toward the active layer (103), wherein: 30°≤β≤γ≤α≤90°, and the angle is the inclination angle of the tangent along the curve; The descending angle of the peak position of the density of the first waveguide layer under the spatial hole burning suppression toward the lower limiting layer (101) is θ, the descending angle of the peak position of the density of the second waveguide layer under the spatial hole burning suppression toward the lower limiting layer (101) is δ, and the rising angle of the valley position of the density of the second waveguide layer under the spatial hole burning suppression toward the active layer (103) is σ, wherein: 20°≤δ≤σ≤θ≤90°; The rising angle of the valley position of the separation energy of the first waveguide layer under the spatial hole burning suppression toward the lower limiting layer (101) is φ, the rising angle of the valley position of the separation energy of the second waveguide layer under the spatial hole burning suppression toward the lower limiting layer (101) is ψ, and the falling angle of the peak position of the separation energy of the second waveguide layer under the spatial hole burning suppression toward the active layer (103) is μ, wherein: 25°≤ψ≤μ≤φ≤90°; The rising angle of the valley position of the polarization optical phonon energy of the first spatial hole burning suppression waveguide layer toward the lower limiting layer (101) is ρ, the rising angle of the valley position of the polarization optical phonon energy of the second spatial hole burning suppression waveguide layer toward the lower limiting layer (101) is ω, and the falling angle of the peak position of the polarization optical phonon energy of the second spatial hole burning suppression waveguide layer toward the active layer (103) is ε, wherein: 15°≤ω≤ε≤ρ≤90°.

2. The semiconductor laser chip having a lower waveguide layer for suppressing spatial hole burning according to claim 1, characterized in that: The volume elastic modulus and the descending angle of the peak position of the density of the waveguide layer under the first spatial hole burning suppression toward the lower limiting layer (101), and the rising angle of the valley position of the separation energy and the polarization optical phonon energy of the waveguide layer under the first spatial hole burning suppression toward the lower limiting layer (101) have the following relationship: 15°≤ρ≤θ≤φ≤α≤90°.

3. The semiconductor laser chip having a lower waveguide layer for suppressing spatial hole burning according to claim 1, characterized in that: The rising angle of the valley position of the volume elastic modulus, separation energy, and polarization optical phonon energy of the second spatial hole burning suppression waveguide layer toward the lower limiting layer (101), and the falling angle of the peak position of the density of the second spatial hole burning suppression waveguide layer toward the lower limiting layer (101) have the following relationship: 5°≤ω≤δ≤ψ≤β≤90°.

4. The semiconductor laser chip having a lower waveguide layer for suppressing spatial hole burning according to claim 1, characterized in that: The descending angle of the peak position of the volume elastic modulus, separation energy, and polarization optical phonon energy of the waveguide layer under the second spatial hole burning suppression toward the active layer (103), and the rising angle of the valley position of the density of the waveguide layer under the second spatial hole burning suppression toward the active layer (103) have the following relationship: 10°≤ε≤σ≤μ≤γ≤90°.

5. A semiconductor laser chip with a lower waveguide layer for suppressing spatial hole burning according to claims 2-4, characterized in that: The first method for suppressing the decrease angle of the peak position of the bulk elastic modulus and density of the waveguide layer under the spatial hole burning toward the lower limiting layer (101), the first method for suppressing the increase angle of the valley position of the separation energy and polarization optical phonon energy of the waveguide layer under the spatial hole burning toward the lower limiting layer (101), the second method for suppressing the increase angle of the bulk elastic modulus, separation energy and valley position of the polarization optical phonon energy of the waveguide layer under the spatial hole burning toward the lower limiting layer (101), the second method for suppressing the decrease angle of the peak position of the density of the waveguide layer under the spatial hole burning toward the lower limiting layer (101), the second method for suppressing the decrease angle of the bulk elastic modulus, separation energy and peak position of the polarization optical phonon energy of the waveguide layer under the spatial hole burning toward the active layer (103), and the second method for suppressing the increase angle of the valley position of the density of the waveguide layer under the spatial hole burning toward the active layer (103) have the following relationship: 5°≤ω≤δ≤ψ≤β≤ε≤σ≤μ≤γ≤ρ≤θ≤φ≤α≤90°.

6. The semiconductor laser chip with a lower waveguide layer for suppressing spatial hole burning according to claim 1, characterized in that: The lower waveguide layer for suppressing spatial hole burning is any one or any combination of InGaN, GaN, InN, AlInGaN, AlInN, InGaN / GaN superlattice, InGaN / AlGaN superlattice, InGaN / AlInGaN superlattice, GaN / AlInGaN superlattice, and GaN / AlInGaN superlattice, and has a thickness of 10 to 1000 nm.

7. The semiconductor laser chip with a lower waveguide layer for suppressing spatial hole burning according to claim 1, characterized in that: The bulk elastic modulus distribution of the first spatial hole burning suppression waveguide layer is a linear function distribution, and the bulk elastic modulus distribution of the second spatial hole burning suppression waveguide layer has a function y=A+B*a x (a>1) curve distribution; the density distribution of the waveguide layer under the first suppression of spatial hole burning is a linear function distribution, and the density distribution of the waveguide layer under the second suppression of spatial hole burning has a function y=C+D*x -b (b>1 odd number) the third quadrant curve distribution; the separation energy distribution of the first waveguide layer under the suppression of spatial hole burning is a linear function distribution, and the separation energy distribution of the second waveguide layer under the suppression of spatial hole burning has a function y=E+F*c x (c>1) curve distribution; the polarization optical phonon energy distribution of the first waveguide layer under the spatial hole burning suppression is a line number function distribution, and the polarization optical phonon energy distribution of the second waveguide layer under the spatial hole burning suppression has a function y=G+H*d x (d>1) curve distribution; the volume elastic modulus distribution, density distribution, separation energy distribution, and polarization optical phonon energy distribution of the second waveguide layer under the spatial hole burning suppression have the following relationship: d≤b≤c≤a, and C≤E≤G≤A.

8. The semiconductor laser chip with a lower waveguide layer for suppressing spatial hole burning according to claim 1, characterized in that: The active layer (103) is a periodic structure composed of a well layer and a barrier layer, the number of periods is 3≥m≥1, and the well layer is any one of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, diamond or the like. Any combination, with a thickness of 10 to 100 angstroms, and the barrier layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, with a thickness of 10 to 200 angstroms.

9. The semiconductor laser chip with a lower waveguide layer for suppressing spatial hole burning according to claim 1, characterized in that: The lower confinement layer (101), the lower waveguide layer (102), the electron blocking layer (105), and the upper confinement layer (106) are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond.

10. The semiconductor laser chip having a lower waveguide layer for suppressing spatial hole burning according to claim 1, characterized in that: The substrate (100) includes sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, Mo, TiW, CuW, Cu, sapphire / AlN composite substrate, diamond, graphene, sapphire / SiN x , Sapphire / SiO2 / SiN x Composite substrate, sapphire / SiN x Any one of a / SiO2 composite substrate, a magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

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