Semiconductor purple light and ultraviolet band laser element

Abstract

The invention discloses a semiconductor purple light and ultraviolet band laser element which sequentially comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer from bottom to top, and an interlayer coherent hole tunneling layer is arranged between the upper waveguide layer and the upper limiting layer. The interlayer coherent hole tunneling layer comprises a first interlayer coherent hole tunneling layer, a second interlayer coherent hole tunneling layer and a third interlayer coherent hole tunneling layer. High-periodicity electrostatic potential is constructed, Feshbach molecular resonance is tuned to enhance interaction of excitons and holes residing in different layers in the laser, Mg acceptor activation energy of a p-type semiconductor is reduced, and the ionization efficiency of Mg is improved, so that the holes of the laser are induced to generate inter-layer coherent holes to be injected into an active layer in a tunneling manner, the hole injection efficiency of the active layer is improved, and the performance of the laser is improved. The matching degree and uniformity of electrons and holes of the active layer are improved, and the optical power and slope efficiency of the laser element are improved.

Description

Technical Field

[0001] The invention relates to the technical field of semiconductor optoelectronic devices, and in particular to a semiconductor laser element in the ultraviolet band. Background Art

[0002] Lasers are widely used in laser display, laser TV, laser projector, communication, medical treatment, weapons, guidance, ranging, spectral analysis, cutting, precision welding, high-density optical storage and other fields. There are many types of lasers, and the classification methods are also diverse, mainly including solid, gas, liquid, semiconductor and dye types of lasers; compared with other types of lasers, all-solid-state semiconductor lasers have the advantages of small size, high efficiency, light weight, good stability, long life, simple and compact structure, and miniaturization.

[0003] There are significant differences between lasers and nitride semiconductor light-emitting diodes. 1) Lasers are generated by stimulated radiation from carriers, with a small half-width spectrum and high brightness. The output power of a single laser can be in the W level, while nitride semiconductor light-emitting diodes emit spontaneous radiation, and the output power of a single light-emitting diode is in the mW level. 2) The current density of the laser is as high as KA / cm 2 , which is more than 2 orders of magnitude higher than that of nitride light-emitting diodes, resulting in stronger electron leakage, more serious Auger recombination, stronger polarization effect, more serious electron-hole mismatch, and more serious efficiency attenuation Droop effect; 3) Light-emitting diodes spontaneously radiate incoherent light from high energy levels to low energy levels without external effects, while lasers radiate stimulated transitions. The energy of induced photons should be equal to the difference in energy levels of electron transitions, generating photons and induced photons that are completely coherent light; 4) Different principles: light-emitting diodes produce radiation recombination and luminescence under the action of external voltage when electron holes transition to quantum wells or pn junctions, while lasers require lasing conditions to be met before they can be lased. The carrier inversion distribution in the active region must be met. The stimulated radiation light oscillates back and forth in the resonant cavity, and the propagation in the gain medium amplifies the light. The threshold condition is met so that the gain is greater than the loss, and finally the laser is output.

[0004] Nitride semiconductor lasers have the following problems: 1) The large internal lattice mismatch and strain cause strong polarization effects, and the QCSE quantum confinement Stark effect strongly limits the improvement of the laser's electro-lasing gain; 2) The internal defect density is high, the crystal quality is not ideal, the quantum well luminescence efficiency is low, and the high dislocation density will reduce the life of the laser; 3) The Mg acceptor activation energy of the p-type semiconductor is large, the ionization efficiency is low, the hole concentration is much lower than the electron concentration, and the hole mobility is much lower than the electron mobility, resulting in serious asymmetric mismatch between electrons and holes in the quantum well, electron leakage and carrier delocalization, more difficult hole transport in the quantum well, uneven carrier injection, uneven gain, broadening of the laser gain spectrum, and decreased peak gain. Summary of the invention

[0005] The present invention provides a semiconductor laser element in the ultraviolet band. The specific hole mobility distribution and electron effective mass distribution of the interlayer coherent hole tunneling layer are used to construct a highly periodic electrostatic potential, and the Feshbach molecular resonance is tuned to enhance the interaction between excitons and holes residing in different layers in the laser, reduce the activation energy of the Mg acceptor of the p-type semiconductor, and improve the ionization efficiency of Mg, thereby inducing the holes of the laser to generate interlayer coherent hole tunneling injection into the active layer, improving the hole injection efficiency of the active layer, improving the matching degree and uniformity of electrons and holes in the active layer, reducing the excitation threshold of the laser element, enhancing the limitation factor and peak gain, and improving the optical power and slope efficiency of the laser element.

[0006] The present invention provides a semiconductor ultraviolet band laser element, which comprises, from bottom to top, a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, and an upper confinement layer, wherein an interlayer coherent hole tunneling layer is provided between the upper waveguide layer and the upper confinement layer.

[0007] The interlayer coherent hole tunneling layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond;

[0008] The interlayer coherent hole tunneling layer includes a first interlayer coherent hole tunneling layer, a second interlayer coherent hole tunneling layer and a third interlayer coherent hole tunneling layer.

[0009] Preferably, the hole mobility distribution of the first interlayer coherent hole tunneling layer has a function y=A+B*x 2 / sinx curve distribution; the hole mobility distribution of the second interlayer coherent hole tunneling layer has a function y = C + E * e x / x first quadrant curve distribution; the hole mobility distribution of the third interlayer coherent hole tunneling layer has a function y=F+G*x / e x Curved distribution.

[0010] Preferably, the hole mobility of the first interlayer coherent hole tunneling layer is d, the hole mobility of the second interlayer coherent hole tunneling layer is e, and the hole mobility of the third interlayer coherent hole tunneling layer is f, wherein: 5<e<f<d<1000(cm 2 / V / s).

[0011] Preferably, the electron effective mass distribution of the first interlayer coherent hole tunneling layer has a function y=H+I*xJ*sinx curve distribution; the electron effective mass distribution of the second interlayer coherent hole tunneling layer has a function y=K+L*e x sinx first quadrant curve distribution; the electron effective mass distribution of the third interlayer coherent hole tunneling layer has a function y=M+N*e x +P*cosx second and third quadrant curve distribution.

[0012] Preferably, the electron effective mass of the first interlayer coherent hole tunneling layer is g, the electron effective mass of the second interlayer coherent hole tunneling layer is h, and the electron effective mass of the third interlayer coherent hole tunneling layer is i, wherein: 0.01<g<i<h<5.

[0013] Preferably, the electron affinity energy distribution of the first interlayer coherent hole tunneling layer has a function y=O+Q*x 2 -R*e x Curve distribution; the electron affinity energy distribution of the second interlayer coherent hole tunneling layer has a function y=S+x+a / x (a>0) third quadrant curve distribution; the electron affinity energy distribution of the third interlayer coherent hole tunneling layer has a function y=W+x 2 e x Curve distribution; the electron affinity of the first interlayer coherent hole tunneling layer is j, the electron affinity of the second interlayer coherent hole tunneling layer is k, and the electron affinity of the third interlayer coherent hole tunneling layer is l, wherein: 0.1<l<k<j<10(eV).

[0014] Preferably, the peak rate electric field distribution of the first interlayer coherent hole tunneling layer has a function y=U+V*x 2 -e x Curve distribution; The peak rate electric field distribution of the second interlayer coherent hole tunneling layer has a function y=Z+e x cos first two quadrant curve distribution; the peak rate electric field distribution of the third interlayer coherent hole tunneling layer has a function y=T+xe x Curve distribution; the peak rate electric field of the first interlayer coherent hole tunneling layer is m, the peak rate electric field of the second interlayer coherent hole tunneling layer is n, and the peak rate electric field of the third interlayer coherent hole tunneling layer is p, where: 20<m<p<n<1000 (kV / m).

[0015] Preferably, the active layer is a periodic structure composed of a well layer and a barrier layer, the number of periods is 3≥m≥1, and the well layer is any one of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN or Any combination, with a thickness of 10 to 100 angstroms, and the barrier layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN, with a thickness of 10 to 200 angstroms.

[0016] Preferably, the lower limiting layer, the lower waveguide layer, the upper waveguide layer and the upper limiting layer are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN.

[0017] Preferably, the substrate comprises sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiN x , Sapphire / SiO2 / SiN x Any one of a composite substrate, a magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

[0018] Compared with the prior art, the semiconductor ultraviolet band laser element provided by the embodiment of the present invention has the following beneficial effects:

[0019] 1. The specific hole mobility distribution and electron effective mass distribution of the interlayer coherent hole tunneling layer are used to construct a highly periodic electrostatic potential, tune the Feshbach molecular resonance to enhance the interaction between excitons and holes residing in different layers in the laser, reduce the activation energy of the Mg acceptor of the p-type semiconductor, and improve the ionization efficiency of Mg, thereby inducing the holes of the laser to generate interlayer coherent hole tunneling injection into the active layer, improve the hole injection efficiency of the active layer, improve the matching degree and uniformity of electrons and holes in the active layer, reduce the excitation threshold of the laser element, enhance the limitation factor and peak gain, and improve the optical power and slope efficiency of the laser element.

[0020] 2. The specific electron affinity energy distribution and peak rate electric field distribution of the interlayer coherent hole tunneling layer regulate the electric field distribution of the laser, suppress the QCSE quantum confinement Stark effect, enhance the carrier localization of the active layer, suppress the carrier capture by dislocations, reduce electron leakage, improve the luminescence efficiency and electro-lasing gain of the quantum well, improve the aging life of the laser, and reduce aging light decay. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 A schematic structural diagram of a semiconductor ultraviolet laser element provided by the present invention.

[0022] Figure 2 The present invention provides a SIMS secondary ion mass spectrum of a semiconductor ultraviolet laser element.

[0023] Markings in the figure: 100: substrate; 101: lower confinement layer; 102: lower waveguide layer; 103: active layer; 104: upper waveguide layer; 105: upper confinement layer; 106: interlayer coherent hole tunneling layer; 106a: first interlayer coherent hole tunneling layer; 106b: second interlayer coherent hole tunneling layer; 106c: third interlayer coherent hole tunneling layer. DETAILED DESCRIPTION

[0024] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0025] In order to solve the above problems, a semiconductor ultraviolet laser element provided in an embodiment of the present application will be introduced and explained in detail through the following specific embodiments.

[0026] Reference Figure 1-2The present invention provides a semiconductor ultraviolet band laser element, which includes, from bottom to top, a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, and an upper confinement layer 105, wherein an interlayer coherent hole tunneling layer 106 is provided between the upper waveguide layer 104 and the upper confinement layer 105.

[0027] The interlayer coherent hole tunneling layer 106 is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond;

[0028] The interlayer coherent hole tunneling layer 106 includes a first interlayer coherent hole tunneling layer 106a, a second interlayer coherent hole tunneling layer 106b and a third interlayer coherent hole tunneling layer 106c.

[0029] The hole mobility distribution of the first interlayer coherent hole tunneling layer 106a has a function y=A+B*x 2 / sinx curve distribution; the hole mobility distribution of the second interlayer coherent hole tunneling layer 106b has a function y=C+E*e x / x first quadrant curve distribution; the hole mobility distribution of the third interlayer coherent hole tunneling layer 106c has a function y=F+G*x / e x Curved distribution.

[0030] The hole mobility of the first interlayer coherent hole tunneling layer 106a is d, the hole mobility of the second interlayer coherent hole tunneling layer 106b is e, and the hole mobility of the third interlayer coherent hole tunneling layer 106c is f, wherein: 5<e<f<d<1000cm 2 / V / s.

[0031] The electron effective mass distribution of the first interlayer coherent hole tunneling layer 106a has a function y=H+I*xJ*sinx curve distribution; the electron effective mass distribution of the second interlayer coherent hole tunneling layer 106b has a function y=K+L*e x sinx first quadrant curve distribution; the electron effective mass distribution of the third interlayer coherent hole tunneling layer 106c has a function y=M+N*e x +P*cosx second and third quadrant curve distribution.

[0032] The electron effective mass of the first interlayer coherent hole tunneling layer 106a is g, the electron effective mass of the second interlayer coherent hole tunneling layer 106b is h, and the electron effective mass of the third interlayer coherent hole tunneling layer 106c is i, wherein: 0.01<g<i<h<5.

[0033] In summary, the specific hole mobility distribution and electron effective mass distribution of the interlayer coherent hole tunneling layer construct a highly periodic electrostatic potential, tune the Feshbach molecular resonance to enhance the interaction between excitons and holes residing in different layers in the laser, reduce the activation energy of the Mg acceptor of the p-type semiconductor, and improve the ionization efficiency of Mg, thereby inducing the holes of the laser to generate interlayer coherent hole tunneling injection into the active layer, improve the hole injection efficiency of the active layer, improve the matching degree and uniformity of electrons and holes in the active layer, reduce the excitation threshold of the laser element, enhance the limitation factor and peak gain, and improve the optical power and slope efficiency of the laser element.

[0034] The electron affinity energy distribution of the first interlayer coherent hole tunneling layer 106a has a function y=O+Q*x 2 -R*e x Curve distribution; the electron affinity energy distribution of the second interlayer coherent hole tunneling layer 106b has a function y=S+x+a / x (a>0) third quadrant curve distribution; the electron affinity energy distribution of the third interlayer coherent hole tunneling layer 106c has a function y=W+x 2 e x Curve distribution; the electron affinity of the first interlayer coherent hole tunneling layer 106a is j, the electron affinity of the second interlayer coherent hole tunneling layer 106b is k, and the electron affinity of the third interlayer coherent hole tunneling layer 106c is l, wherein: 0.1<l<k<j<10(eV).

[0035] The peak rate electric field distribution of the first interlayer coherent hole tunneling layer 106a has a function y=U+V*x 2 -e x Curve distribution; The peak rate electric field distribution of the second interlayer coherent hole tunneling layer 106b has a function y=Z+e x cos first two quadrant curve distribution; the peak rate electric field distribution of the third interlayer coherent hole tunneling layer 106c has a function y=T+xe x Curve distribution; the peak rate electric field of the first interlayer coherent hole tunneling layer 106a is m, the peak rate electric field of the second interlayer coherent hole tunneling layer 106b is n, and the peak rate electric field of the third interlayer coherent hole tunneling layer 106c is p, where: 20<m<p<n<1000 (kV / m).

[0036] In summary, the specific electron affinity energy distribution and peak rate electric field distribution of the interlayer coherent hole tunneling layer regulate the electric field distribution of the laser, suppress the QCSE quantum confinement Stark effect, enhance the carrier localization of the active layer, suppress the carrier capture by dislocations, reduce electron leakage, improve the luminescence efficiency and electro-lasing gain of the quantum well, improve the aging life of the laser, and reduce aging light decay.

[0037] The specific data are shown in the following table, which compares the data of the traditional laser and the laser of the present invention.

[0038] Blue Laser Project Conventional laser Laser of the present invention Range of change Slope efficiency (W / A) 0.8 1.43 79％ <![CDATA[Threshold current density (kA / cm 2 )]]> 2.4 0.68 -72％ Optical power(W) 1.5 2.3 53％ 1000H aging light decay 21％ 3.2％ -85％

[0039] In the present invention, the active layer 103 is a periodic structure composed of a well layer and a barrier layer, the number of periods is 3≥m≥1, and the well layer is any one of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN. any one or any combination thereof, with a thickness of 10 to 100 angstroms, and the barrier layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN, with a thickness of 10 to 200 angstroms.

[0040] In the present invention, the lower confinement layer 101, the lower waveguide layer 102, the upper waveguide layer 104, and the upper confinement layer 105 are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN.

[0041] In the present invention, the substrate 100 includes sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiN x , Sapphire / SiO2 / SiN x Any one of a composite substrate, a magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

[0042] The above is only a preferred embodiment of the present invention. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the technical principles of the present invention. These improvements and modifications should also be regarded as the scope of protection of the present invention.

Claims

1. A semiconductor ultraviolet band laser element, comprising, from bottom to top, a substrate (100), a lower confinement layer (101), a lower waveguide layer (102), an active layer (103), an upper waveguide layer (104), and an upper confinement layer (105), characterized in that: An interlayer coherent hole tunneling layer (106) is provided between the upper waveguide layer (104) and the upper confinement layer (105). The interlayer coherent hole tunneling layer (106) is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond; The interlayer coherent hole tunneling layer (106) comprises a first interlayer coherent hole tunneling layer (106a), a second interlayer coherent hole tunneling layer (106b) and a third interlayer coherent hole tunneling layer (106c).

2. A semiconductor ultraviolet laser element according to claim 1, characterized in that: The hole mobility distribution of the first interlayer coherent hole tunneling layer (106a) has a function y=A+B*x 2 / sinx curve distribution; the hole mobility distribution of the second interlayer coherent hole tunneling layer (106b) has a function y=C+E*e x / x first quadrant curve distribution; the hole mobility distribution of the third interlayer coherent hole tunneling layer (106c) has a function y=F+G*x / e x Curved distribution.

3. A semiconductor ultraviolet laser element according to claim 2, characterized in that: The hole mobility of the first interlayer coherent hole tunneling layer (106a) is d, the hole mobility of the second interlayer coherent hole tunneling layer (106b) is e, and the hole mobility of the third interlayer coherent hole tunneling layer (106c) is f, wherein: 5<e<f<d<1000(cm 2 / V / s).

4. The semiconductor ultraviolet laser element according to claim 1, characterized in that: The electron effective mass distribution of the first interlayer coherent hole tunneling layer (106a) has a function y=H+I*xJ*sinx curve distribution; the electron effective mass distribution of the second interlayer coherent hole tunneling layer (106b) has a function y=K+L*e x sinx first quadrant curve distribution; the electron effective mass distribution of the third interlayer coherent hole tunneling layer (106c) has a function y=M+N*e x +P*cosx second and third quadrant curve distribution.

5. The semiconductor ultraviolet laser element according to claim 4, characterized in that: The electron effective mass of the first interlayer coherent hole tunneling layer (106a) is g, the electron effective mass of the second interlayer coherent hole tunneling layer (106b) is h, and the electron effective mass of the third interlayer coherent hole tunneling layer (106c) is i, wherein: 0.01<g<i<h<5.

6. The semiconductor ultraviolet laser element according to claim 1, characterized in that: The electron affinity energy distribution of the first interlayer coherent hole tunneling layer (106a) has a function y=O+Q*x 2 -R*e x curve distribution; the electron affinity energy distribution of the second interlayer coherent hole tunneling layer (106b) has a function y=S+x+a / x (a>0) third quadrant curve distribution; the electron affinity energy distribution of the third interlayer coherent hole tunneling layer (106c) has a function y=W+x 2 e x Curve distribution; the electron affinity of the first interlayer coherent hole tunneling layer (106a) is j, the electron affinity of the second interlayer coherent hole tunneling layer (106b) is k, and the electron affinity of the third interlayer coherent hole tunneling layer (106c) is l, wherein: 0.1<l<k<j<10 (eV).

7. The semiconductor ultraviolet laser element according to claim 1, characterized in that: The peak rate electric field distribution of the first interlayer coherent hole tunneling layer (106a) has a function y=U+V*x 2 -e x Curve distribution; the peak rate electric field distribution of the second interlayer coherent hole tunneling layer (106b) has a function y=Z+e x cos first two quadrant curve distribution; the peak rate electric field distribution of the third interlayer coherent hole tunneling layer (106c) has a function y=T+xe x Curve distribution: the peak rate electric field of the first interlayer coherent hole tunneling layer (106a) is m, the peak rate electric field of the second interlayer coherent hole tunneling layer (106b) is n, and the peak rate electric field of the third interlayer coherent hole tunneling layer (106c) is p, wherein: 20<m<p<n<1000 (kV / m).

8. The semiconductor ultraviolet laser element according to claim 1, characterized in that: The active layer (103) is a periodic structure composed of a well layer and a barrier layer, the number of periods is 3≥m≥1, and the well layer is any one of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN or Any combination, with a thickness of 10 to 100 angstroms, and the barrier layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN, with a thickness of 10 to 200 angstroms.

9. The semiconductor ultraviolet laser element according to claim 1, characterized in that: The lower confinement layer (101), the lower waveguide layer (102), the upper waveguide layer (104), and the upper confinement layer (105) are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN.

10. The semiconductor ultraviolet laser element according to claim 1, characterized in that: The substrate (100) includes sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiN x , Sapphire / SiO2 / SiN x Any one of a composite substrate, a magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

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