Perovskite layer manufacturing method, perovskite cell, cell assembly and photovoltaic system

Abstract

The invention is suitable for the technical field of solar cells, and provides a manufacturing method of a perovskite layer, a perovskite cell, a cell module and a photovoltaic system. The manufacturing method of the perovskite layer comprises the following steps: providing a substrate of a to-be-manufactured perovskite layer; preheating a process chamber of the vacuum drying equipment to a preset temperature; preparing a perovskite precursor film on a substrate by using the perovskite precursor solution; putting the substrate on which the perovskite precursor film is manufactured into the preheated process chamber; performing vacuum drying treatment on the perovskite precursor film in the process chamber; purging the perovskite precursor film subjected to vacuum drying treatment by using purging gas in a process chamber; and carrying out annealing treatment on the perovskite precursor film which is purged by the purge gas to form a perovskite layer. Therefore, poor quality of the perovskite layer and difficulty in large-area mass production caused by the anti-solvent can be avoided, and cost reduction, efficiency improvement and large-area mass production are facilitated.

Description

Technical Field

[0001] The present application belongs to the technical field of solar cells, and in particular relates to a method for manufacturing a perovskite layer, a perovskite cell, a cell assembly and a photovoltaic system. Background Art

[0002] Solar cell power generation is a sustainable source of clean energy. It uses the photovoltaic effect of semiconductor pn junction to convert sunlight into electrical energy. Solar cells include perovskite cells, which use the perovskite layer as a light-absorbing layer to achieve photoelectric conversion.

[0003] The perovskite layer is a polycrystalline semiconductor material. The crystallization quality of the perovskite layer directly determines the power generation efficiency of the perovskite battery. In the related art, an anti-solvent is usually used to regulate the crystallization after the perovskite precursor film is formed. However, the perovskite layer formed in this way has poor quality and is difficult to mass-produce on a large scale.

[0004] Based on this, how to make the perovskite layer to improve the quality of the perovskite layer and achieve large-scale mass production has become an urgent problem to be solved. Summary of the invention

[0005] The present application provides a method for manufacturing a perovskite layer, a perovskite cell, a cell assembly and a photovoltaic system, aiming to solve the problem of how to manufacture a perovskite layer to improve the quality of the perovskite layer and achieve large-scale mass production.

[0006] The method for manufacturing a perovskite layer provided in the present application comprises:

[0007] Providing a substrate on which a perovskite layer is to be formed;

[0008] Preheating the process chamber of the vacuum drying equipment to a preset temperature;

[0009] Using a perovskite precursor solution, forming a perovskite precursor film on the substrate;

[0010] placing the substrate with the perovskite precursor film formed thereon into the preheated process chamber;

[0011] performing vacuum drying treatment on the perovskite precursor film in the process chamber;

[0012] Purging the vacuum dried perovskite precursor film in the process chamber using a purge gas;

[0013] The perovskite precursor film purged with the purge gas is annealed to form a perovskite layer.

[0014] Optionally, in the step of preheating the process chamber of the vacuum drying equipment to a preset temperature range, the preset temperature is 30°C-50°C.

[0015] Optionally, performing a vacuum drying process on the perovskite precursor film in the process chamber comprises:

[0016] Pumping the pressure in the process chamber from normal pressure to a preset pressure;

[0017] The process chamber is pressurized for a preset period of time.

[0018] Optionally, in the step of evacuating the gas pressure in the process chamber from normal pressure to a preset pressure, the preset pressure is 10Pa-30Pa, and the evacuation time is 20s-25s.

[0019] Optionally, in the step of maintaining the process chamber pressure for a preset time period, the preset time period is less than or equal to 15 seconds.

[0020] Optionally, after the step of purging the vacuum-dried perovskite precursor film in the process chamber with a purge gas, and before the step of annealing the perovskite precursor film purged with the purge gas, the manufacturing method includes:

[0021] The gas pressure in the process chamber is restored to normal pressure.

[0022] Optionally, in the step of purging the perovskite precursor film after vacuum drying in the process chamber using a purge gas, the purge gas includes at least one of nitrogen, helium, neon, argon, krypton, xenon, and radon.

[0023] The perovskite cell provided in the present application, wherein the perovskite layer of the perovskite cell is manufactured by any of the above-mentioned methods for manufacturing a perovskite layer.

[0024] The battery assembly provided in the present application includes the above-mentioned perovskite battery.

[0025] The photovoltaic system provided in the present application includes the above-mentioned battery assembly.

[0026] The perovskite layer manufacturing method, perovskite cell, cell assembly and photovoltaic system of the embodiments of the present application, since the substrate manufactured with the perovskite precursor film is placed in a process chamber preheated to a preset temperature for vacuum drying and purge gas purging, and the perovskite precursor film after the purge gas is annealed, the crystallization and growth of the perovskite precursor film can be regulated without the anti-solvent, thereby avoiding the poor quality of the perovskite layer and difficulty in large-scale mass production caused by the anti-solvent, which is beneficial to reducing costs, improving efficiency and achieving large-scale mass production. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] Figure 1 is a schematic flow chart of a method for manufacturing a perovskite layer according to an embodiment of the present application;

[0028] Figure 2 is a schematic flow chart of a method for manufacturing a perovskite layer according to an embodiment of the present application;

[0029] Figure 3 is a schematic flow chart of a method for manufacturing a perovskite layer according to an embodiment of the present application;

[0030] Figure 4 This is a SEM electron microscope image of a perovskite layer made by a method for making a perovskite layer in the related art;

[0031] Figure 5 This is a SEM electron microscope image of a perovskite layer made by a method for making a perovskite layer in the related art;

[0032] Figure 6 This is a SEM electron microscope image of a perovskite layer made by a method for making a perovskite layer in the related art;

[0033] Figure 7 This is a SEM electron microscope image of a perovskite layer made by a method for making a perovskite layer according to an embodiment of the present application;

[0034] Figure 8 This is a SEM electron microscope image of a perovskite layer made by a method for making a perovskite layer according to an embodiment of the present application;

[0035] Fig. 9 This is a SEM electron microscope image of a perovskite layer made by a method for making a perovskite layer according to an embodiment of the present application. DETAILED DESCRIPTION

[0036] In order to make the purpose, technical solutions and advantages of the present application clearer, the present application is further described in detail below in conjunction with the accompanying drawings and embodiments. Examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements with the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present application, and should not be construed as limiting the present application. In addition, it should be understood that the specific embodiments described herein are only used to explain the present application and are not intended to limit the present application.

[0037] In the description of the present application, it should be understood that the terms "length", "width", "up", "down", "left", "right", "horizontal", "top", "bottom", etc., indicating the orientation or position relationship are based on the orientation or position relationship shown in the accompanying drawings, and are only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.

[0038] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of this application, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0039] In the description of this application, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection, an electrical connection, or mutual communication; it can be a direct connection, or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0040] In the present application, unless otherwise clearly specified and limited, a first feature being "above" or "below" a second feature may include that the first and second features are in direct contact, or may include that the first and second features are not in direct contact but are in contact through another feature between them. Moreover, a first feature being "above", "above" and "above" a second feature includes that the first feature is directly above and obliquely above the second feature, or simply indicates that the first feature is higher in level than the second feature. A first feature being "below", "below" and "below" a second feature includes that the first feature is directly below and obliquely below the second feature, or simply indicates that the first feature is lower in level than the second feature.

[0041] The disclosure below provides many different embodiments or examples to realize the different structures of the present application. In order to simplify the disclosure of the present application, the parts and settings of specific examples are described below. Of course, they are only examples, and the purpose is not to limit the present application. In addition, the present application can repeat reference numbers and / or reference letters in different examples, and this repetition is for the purpose of simplification and clarity, and does not indicate the relationship between the various embodiments and / or settings discussed in itself. In addition, the various specific processes and examples of materials provided by the present application, but those of ordinary skill in the art can be aware of the application of other processes and / or the use scenarios of other materials.

[0042] In the present application, since the substrate with the perovskite precursor film is placed in a process chamber preheated to a preset temperature for vacuum drying and purge gas purging, and the perovskite precursor film after the purge gas is annealed, the crystallization and growth of the perovskite precursor film can be regulated without the anti-solvent, avoiding the poor quality of the perovskite layer and difficulty in large-scale mass production caused by the anti-solvent, which is beneficial to reducing costs, improving efficiency and achieving large-scale mass production.

[0043] See also Figure 1 , the method for manufacturing the perovskite layer of the embodiment of the present application comprises:

[0044] Step S11: providing a substrate on which a perovskite layer is to be fabricated;

[0045] Step S12: preheating a process chamber of a vacuum drying device (VCD) to a preset temperature;

[0046] Step S13: using the perovskite precursor solution to form a perovskite precursor film on the substrate;

[0047] Step S14: placing the substrate with the perovskite precursor film into a preheated process chamber;

[0048] Step S15: performing vacuum drying treatment on the perovskite precursor film in a process chamber;

[0049] Step S16: using a purge gas to purge the vacuum dried perovskite precursor film in the process chamber;

[0050] Step S18: annealing the perovskite precursor film after being purged with the purge gas to form a perovskite layer.

[0051] The method for preparing the perovskite layer in the embodiment of the present application, since the substrate prepared with the perovskite precursor film is placed in a process chamber preheated to a preset temperature for vacuum drying and purging with a purge gas, and the perovskite precursor film after purging with the purge gas is annealed, it is possible to regulate the crystallization and growth of the perovskite precursor film without an anti-solvent, thereby avoiding the poor quality of the perovskite layer and difficulty in large-scale mass production caused by the anti-solvent, which is beneficial to reducing costs, improving efficiency, and achieving large-scale mass production.

[0052] Specifically, in step S11, the substrate may be a subcell in a stacked cell, a glass substrate, an electron transport layer, a hole transport layer, a SAM layer, or other film layers of a solar cell such as a passivation layer, an anti-reflection layer, and a suede layer. The specific form of the substrate is not limited here.

[0053] In some optional embodiments, in step S12, the preset temperature is 30°C-50°C. For example, 30°C, 32°C, 35°C, 36°C, 38°C, 40°C, 42°C, 45°C, 46°C, 48°C, and 50°C. In this way, the temperature of the process chamber after preheating is in a suitable range. After the substrate with the perovskite precursor film is placed in the preheated process chamber, the precursor solute molecules can be better dispersed in the solvent. At the same time, the adhesion of the precursor solute molecules to the lower interface can be increased, thereby reducing the lower interface defects. If the preset temperature is too low, the dispersion effect of the precursor solute molecules in the solvent and the adhesion to the lower interface are poor. If the preset temperature is too high, it will induce thin film nucleation growth and the grain size will be uncontrollable. The preset temperature is 30°C-50°C, which is beneficial to improving the quality of the perovskite layer.

[0054] Specifically, in step S13, a wet process can be used to make a perovskite precursor film using a perovskite precursor solution. Further, a one-step method can be used to apply the perovskite precursor solution to a substrate. It is understood that a two-step method can also be used, in which the perovskite precursor solution includes an inorganic perovskite solution and an organic solution, and the inorganic perovskite solution is first applied to the substrate, and then the organic solution is applied. The coating process includes at least one of a spin coating process, a blade coating process, a spray coating process, an inkjet process, and a slit coating process.

[0055] Specifically, in step S14, one or more substrates with perovskite precursor films may be placed in a preheated process chamber. Multiple substrates with perovskite precursor films may be placed in multiple preheated process chambers. The corresponding relationship between the substrates with perovskite precursor films and the process chambers is not limited herein.

[0056] Specifically, in step S15, the perovskite precursor film is subjected to a vacuum drying treatment in the process chamber, which can promote the formation of suitable seed crystals on the surface of the perovskite precursor film and also allow the solvent to evaporate to form a dry film.

[0057] In some optional embodiments, in step S16, the purge gas includes at least one of nitrogen, helium, neon, argon, krypton, xenon, and radon. In this way, a variety of purge gases are provided, which ensure that the purge gas does not react with the perovskite and avoids reducing the quality of the perovskite layer, so that the purge gas can adapt to more actual production scenarios.

[0058] For example, the purge gas includes nitrogen. For another example, the purge gas includes nitrogen, helium, neon, argon, krypton, xenon and radon. For another example, the purge gas includes nitrogen, helium and neon. This is not limited here.

[0059] Specifically, when there are multiple types of purge gases, the multiple purge gases may be used to perform purge sequentially, or the multiple purge gases may be used to perform purge simultaneously, which is not limited here.

[0060] In some optional embodiments, in step S16, the purge rate is 0.2L / min-5L / min. For example, 0.2L / min, 0.5L / min, 0.8L / min, 1L / min, 2L / min, 3L / min, 4L / min, 5L / min. In this way, the purge rate of nitrogen is within a suitable range, which can avoid the purge effect being not obvious due to too small a purge rate, and can also avoid the quality of the perovskite layer being reduced due to too large a purge rate.

[0061] In some optional embodiments, in step S18, the annealing temperature is 100°C-150°C, and the annealing time is 10min-15min. In this way, the annealing temperature and time are within a suitable range, so that the heat absorbed by the perovskite precursor film is within a suitable range, which can avoid the difficulty of perovskite crystallization caused by too little heat, and can also avoid the waste of energy and increase in cost caused by too much heat.

[0062] Specifically, the thermal annealing temperature is, for example, 100°C, 110°C, 120°C, 130°C, 140°C, or 150°C.

[0063] Preferably, the thermal annealing temperature is 160° C.-170° C. For example, 160° C., 162° C., 165° C., 168° C., 170° C. Thus, further optimizing the thermal annealing temperature is beneficial to further reduce the cost and improve the quality of the perovskite layer.

[0064] Specifically, the thermal annealing time is, for example, 10 min, 11 min, 12 min, 13 min, 14 min, or 15 min.

[0065] Preferably, the thermal annealing time is 12 min-13 min. For example, 12 min, 12.2 min, 12.5 min, 12.8 min, 13 min. Thus, further optimizing the thermal annealing time is conducive to further improving the production efficiency and improving the quality of the perovskite layer.

[0066] See also Figure 2 In some optional embodiments, step S15 includes:

[0067] Step S151: evacuating the pressure in the process chamber from normal pressure to a preset pressure;

[0068] Step S152: Maintaining the pressure in the process chamber for a preset time.

[0069] In this way, vacuum drying is achieved by evacuating to a preset pressure and maintaining the pressure, so that the perovskite forms an intermediate phase and the solvent in the perovskite precursor film is volatilized, so that the quality of the perovskite layer is better.

[0070] In some optional embodiments, in step S151, the preset pressure is 10Pa-30Pa, and the vacuuming time is 20s-25s. In this way, the vacuuming rate is within a suitable range, which can avoid the failure of the perovskite to form an intermediate phase due to a low vacuuming rate, and the volatilization of organic matter during subsequent annealing due to heat, and can also avoid the cracking of the perovskite film due to a high vacuuming rate, and the low efficiency of the manufactured perovskite battery.

[0071] Specifically, the preset pressure is, for example, 10Pa, 12Pa, 15Pa, 18Pa, 20Pa, 22Pa, 25Pa, 28Pa, and 30Pa.

[0072] Specifically, the vacuuming time is, for example, 20 s, 21 s, 22 s, 23 s, 24 s, or 25 s.

[0073] In some optional embodiments, in step S152, the preset duration is less than or equal to 15s. For example, 1s, 2s, 5s, 8s, 10s, 12s, 15s. In this way, the duration of the pressure holding is within an appropriate range, which can avoid the situation where the solvent in the perovskite precursor film is removed too much due to the pressure holding for too long, and the grains do not grow large when the subsequent crystal growth requires the cooperation of the solvent, and can avoid the deterioration of the light transmittance, which affects the current and efficiency of the perovskite battery.

[0074] Preferably, the preset time length is 10 seconds, so that the quality of the perovskite layer is better.

[0075] See also Figure 3 In some optional embodiments, after step S16 and before step S18, the manufacturing method includes:

[0076] Step S17: restore the gas pressure in the process chamber to normal pressure.

[0077] In this way, when the purged perovskite precursor film is taken out of the process chamber, the perovskite precursor film will not be suddenly exposed to normal pressure, which can avoid the damage of the perovskite layer caused by the sudden change of pressure, and can avoid the adverse effect of the preset pressure on annealing. In this way, the quality of the perovskite layer is better.

[0078] Specifically, at least one of air, nitrogen, helium, neon, argon, krypton, xenon and radon can be introduced into the process chamber. In this way, a variety of gases that can be introduced into the process chamber to restore to normal pressure are provided, and when the process chamber is restored to normal pressure, it can be ensured that the gas does not react with the perovskite and avoid reducing the quality of the perovskite layer.

[0079] The following table is the test data of the perovskite battery formed by the perovskite layer made by the method for making a perovskite layer of the related art and an embodiment of the present application. The perovskite layer made by the method for making a perovskite layer of the related art uses an anti-solvent to regulate crystallization after forming a perovskite precursor film. The perovskite layer made by the method for making a perovskite layer of the present application places the substrate made with the perovskite precursor film into a process chamber preheated to a preset temperature for vacuum drying and purge with a purge gas, and anneals the perovskite precursor film after the purge with the purge gas.

[0080]

[0081]

[0082] Obviously, compared with the related art, the perovskite battery formed by the perovskite layer made by the manufacturing method of the embodiment of the present application has increased open circuit voltage (Voc), short circuit current (Isc), maximum output (Pmax) of the battery corresponding to the optimal working point, optimal operating voltage (Vpmax), optimal operating current (Ipmax), parallel resistance (Rsh), short circuit current density (Jsc), fill factor (FF), conversion efficiency (η), and greatly reduced series resistance (Rs). Obviously, the perovskite battery formed by the perovskite layer made by the manufacturing method of the present application has better electrical performance.

[0083] Please also read Figure 4 , Figure 5 and Figure 6 , Figure 4 , Figure 5 and Figure 6 This is a SEM electron microscope image of a perovskite layer made by a method for making a perovskite layer in the related art. Obviously, in the related art, although the spin-coating anti-solvent can regulate the nucleation mechanism of the perovskite precursor film, resulting in a small difference in the surface thermal energy of the nucleated perovskite and less annealing. However, the anti-solvent regulation of crystallization has high operational requirements and the anti-solvent also removes a considerable amount of organic halides, destroying the film microstructure and leaving lead iodide that cannot be converted into perovskite.

[0084] Please also read Figure 7 , Figure 8 and Fig. 9 , Figure 7 , Figure 8 and Fig. 9 This is a SEM electron microscope image of a perovskite layer made by a method for making a perovskite layer according to an embodiment of the present application. Obviously, in the present application, the optical properties of the perovskite layer and the electrical properties of the perovskite cell are better than those of the related art.

[0085] In the perovskite cell of the embodiment of the present application, the perovskite layer is manufactured by any of the above-mentioned methods for manufacturing a perovskite layer.

[0086] The perovskite cell of the embodiment of the present application places the substrate with the perovskite precursor film into a process chamber preheated to a preset temperature for vacuum drying and purge gas purging, and the perovskite precursor film after purging with the purge gas is annealed. Therefore, the crystallization and growth of the perovskite precursor film can be regulated without the anti-solvent, thereby avoiding the poor quality of the perovskite layer and difficulty in large-scale mass production caused by the anti-solvent, which is beneficial to reducing costs, improving efficiency and achieving large-scale mass production.

[0087] The battery assembly of the embodiment of the present application includes the above-mentioned perovskite battery.

[0088] In the battery assembly of the embodiment of the present application, since the substrate produced with the perovskite precursor film is placed in a process chamber preheated to a preset temperature for vacuum drying and purge gas purging, and the perovskite precursor film after the purge gas is annealed, the crystallization and growth of the perovskite precursor film can be regulated without the anti-solvent, thereby avoiding the poor quality of the perovskite layer and difficulty in large-scale mass production caused by the anti-solvent, which is beneficial to reducing costs, improving efficiency and achieving large-scale mass production.

[0089] Specifically, the perovskite cell can be a stacked cell or a single cell, which is not limited here.

[0090] The photovoltaic system of the embodiment of the present application includes the above-mentioned battery assembly.

[0091] The photovoltaic system of the embodiment of the present application places the substrate with the perovskite precursor film into a process chamber preheated to a preset temperature for vacuum drying and purge gas purging, and anneals the perovskite precursor film after purging with the purge gas. Therefore, the crystallization and growth of the perovskite precursor film can be regulated without the anti-solvent, thereby avoiding the poor quality of the perovskite layer and difficulty in large-scale mass production caused by the anti-solvent, which is beneficial to reducing costs, improving efficiency and achieving large-scale mass production.

[0092] In this embodiment, the photovoltaic system can be applied to photovoltaic power stations, such as ground power stations, rooftop power stations, water power stations, etc., and can also be applied to equipment or devices that use solar energy to generate electricity, such as user solar power supplies, solar street lights, solar cars, solar buildings, etc. Of course, it can be understood that the application scenarios of the photovoltaic system are not limited to this, that is to say, the photovoltaic system can be applied in all fields that require solar energy to generate electricity. Taking the photovoltaic power generation system network as an example, the photovoltaic system may include a photovoltaic array, a junction box and an inverter. The photovoltaic array may be an array combination of multiple battery components. For example, multiple battery components can form multiple photovoltaic arrays. The photovoltaic array is connected to the junction box. The junction box can converge the current generated by the photovoltaic array. The converged current flows through the inverter and is converted into the alternating current required by the mains power grid, and then connected to the mains network to realize solar power supply.

[0093] In the description of this specification, the description with reference to the terms "some embodiments", "illustrative embodiments", "examples", "specific examples", or "some examples" means that the specific features, structures, materials or characteristics described in conjunction with the embodiments or examples are included in at least one embodiment or example of the present application. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner.

[0094] In addition, the above are only preferred embodiments of the present application and are not intended to limit the present application. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present application should be included in the protection scope of the present application.

Claims

1. A method for preparing a perovskite layer, characterized in that: include: Providing a substrate on which a perovskite layer is to be formed; Preheating the process chamber of the vacuum drying equipment to a preset temperature; Using a perovskite precursor solution, forming a perovskite precursor film on the substrate; placing the substrate with the perovskite precursor film formed thereon into the preheated process chamber; performing vacuum drying treatment on the perovskite precursor film in the process chamber; Purging the vacuum dried perovskite precursor film in the process chamber using a purge gas; The perovskite precursor film purged with the purge gas is annealed to form a perovskite layer.

2. The method for preparing a perovskite layer according to claim 1, characterized in that: In the step of preheating the process chamber of the vacuum drying equipment to a preset temperature range, the preset temperature is 30°C-50°C.

3. The method for preparing a perovskite layer according to claim 1, characterized in that: The perovskite precursor film is subjected to vacuum drying in the process chamber, comprising: Pumping the pressure in the process chamber from normal pressure to a preset pressure; The process chamber is pressurized for a preset period of time.

4. The method for preparing a perovskite layer according to claim 3, characterized in that: In the step of evacuating the air pressure in the process chamber from normal pressure to a preset pressure, the preset pressure is 10Pa-30Pa, and the evacuation time is 20s-25s.

5. The method for preparing a perovskite layer according to claim 3, characterized in that: In the step of maintaining the process chamber pressure for a preset time period, the preset time period is less than or equal to 15 seconds.

6. The method for preparing a perovskite layer according to claim 3, characterized in that: After the step of purging the vacuum dried perovskite precursor film in the process chamber with a purge gas, and before the step of annealing the perovskite precursor film purged with the purge gas, the manufacturing method includes: The gas pressure in the process chamber is restored to normal pressure.

7. The method for preparing a perovskite layer according to claim 1, characterized in that: In the step of purging the vacuum-dried perovskite precursor film in the process chamber with a purge gas, the purge gas includes at least one of nitrogen, helium, neon, argon, krypton, xenon, and radon.

8. A perovskite battery, characterized in that: The perovskite layer of the perovskite cell is made by the method for making a perovskite layer according to any one of claims 1 to 7.

9. A battery assembly, characterized in that: Comprising the perovskite cell as described in claim 8.

10. A photovoltaic system, characterized in that: A battery assembly comprising the battery assembly of claim 9.

Images