Plasma processing apparatus and processing method thereof

Abstract

The invention provides a plasma processing apparatus which can grasp the state of a processed object subjected to plasma processing in real time. A plasma processing apparatus (1) is provided with: an antenna (8); a power source (9) for supplying a high-frequency current for generating a magnetic field to the antenna (8); an image capturing unit that captures an image of the inside of the processing chamber; and a control unit. The power supply (9) intermittently generates plasma by periodically increasing and decreasing the magnitude of the high-frequency current. The control unit controls the imaging unit so as to acquire, as a first image, an image of the inside of the processing chamber synchronized with quenching of the plasma.

Description

Technical Field

[0001] The present disclosure relates to a plasma processing device and a processing method thereof. Background Art

[0002] There is known a plasma processing apparatus that generates inductively coupled plasma in a vacuum container using an antenna disposed in the vacuum container. Depending on the type of the plasma processing apparatus, the plasma processing apparatus performs a predetermined plasma processing on a workpiece using the generated plasma.

[0003] In addition, in a plasma processing apparatus, there is known an apparatus that measures the thickness of a film formed on a workpiece when the plasma is turned off.

[0004] Prior art literature

[0005] Patent Literature

[0006] Patent Document 1: Japanese Patent Application Publication No. 2018-157120 Summary of the invention

[0007] Problems to be solved by the invention

[0008] There is room for improvement in understanding the state of an object being subjected to plasma processing in real time within a plasma processing apparatus.

[0009] The present disclosure has been made in view of the above-mentioned problems, and an object of the present disclosure is to provide a plasma processing apparatus capable of grasping the state of an object to be processed by plasma processing in real time.

[0010] Technical means of solving problems

[0011] In order to solve the above-mentioned problem, a plasma processing device according to one aspect of the present disclosure includes: a processing chamber; an antenna for generating a magnetic field for generating plasma inside the processing chamber; a power supply for supplying a high-frequency current for generating the magnetic field to the antenna; a first imaging unit for imaging the inside of the processing chamber; and a control unit, wherein the power supply intermittently generates the plasma by periodically increasing and decreasing the magnitude of the high-frequency current, and the control unit controls the first imaging unit to obtain an image of the inside of the processing chamber synchronized with the extinction of the plasma as a first image.

[0012] In addition, in the processing method of the plasma processing device disclosed in the present invention, the plasma processing device includes: a processing chamber; an antenna, which generates a magnetic field for generating plasma inside the processing chamber; a power supply, which supplies a high-frequency current for generating the magnetic field to the antenna; and a first camera, which photographs the interior of the processing chamber. The processing method of the plasma processing device includes: a plasma generating step, in which the plasma is intermittently generated by using the power supply to periodically increase and decrease the magnitude of the high-frequency current to generate the plasma; and a first image acquiring step, in which the first camera acquires an image of the interior of the processing chamber synchronized with the extinction of the plasma as a first image.

[0013] Effects of the Invention

[0014] According to an embodiment of the present disclosure, a plasma processing apparatus and a processing method of the plasma processing apparatus are provided, which can grasp the state of an object to be processed by plasma processing in real time. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] [ Figure 1 ] Figure 1 This is a diagram for explaining the structure of the plasma processing apparatus according to the first embodiment of the present disclosure.

[0016] [ Figure 2 ] Figure 2 yes Figure 1 Sectional view along line II-II.

[0017] [ Figure 3 ] Figure 3 Yes means Figure 1 A functional block diagram of the main structure of the plasma processing device shown.

[0018] [ Figure 4 ] Figure 4 Yes Figure 3 A diagram for explaining a specific example of display contents on the display unit shown in FIG.

[0019] [ Figure 5 ] Figure 5 Yes Figure 3 FIG. 2 is a diagram for explaining the operation timing of the imaging operation of the imaging unit shown in FIG.

[0020] [ Figure 6 ] Figure 6 This is a cross-sectional view illustrating the structure of a plasma processing apparatus according to a second embodiment of the present disclosure.

[0021] [ Figure 7 ] Figure 7 Yes means Figure 6 A functional block diagram of the main structure of the plasma processing device shown.

[0022] [ Figure 8 ] Figure 8 Yes Figure 7 A diagram for explaining a specific example of display contents on the display unit shown in FIG.

[0023] [ Fig. 9 ] Fig. 9 Yes Figure 7 FIG. 2 is a diagram for explaining the operation timing of the imaging operation of the imaging unit shown in FIG.

[0024] [ Fig.10 ] Fig.10 This is a diagram for explaining a specific example of display content on a display unit of a plasma processing apparatus according to a modified example of the present disclosure. DETAILED DESCRIPTION

[0025] [Implementation method 1]

[0026] Below, use Figures 1 to 3 Embodiment 1 of the present disclosure will be described in detail. Figure 1 This is a diagram for explaining the structure of the plasma processing apparatus 1 according to the first embodiment of the present disclosure. Figure 2 yes Figure 1 Sectional view along line II-II. Figure 3 Yes means Figure 1 1 is a functional block diagram of a main structure of the plasma processing apparatus 1 shown.

[0027] In the following description, a plasma processing device 1 is exemplified for explanation. The plasma processing device 1 performs a film forming process as a predetermined plasma process. The film forming process forms a predetermined film on the surface of a processed sample H1 as a processed object by a plasma CVD (Chemical Vapor Deposition) method using an inductively coupled plasma.

[0028] However, the present disclosure can be applied to a plasma processing device that performs, for example, a film forming process of forming a predetermined film on a processed sample H1 by a sputtering method as a predetermined plasma treatment. In addition, the present disclosure can be applied to a plasma processing device that performs a surface processing process of performing a predetermined process on the surface of the processed sample H1 using plasma, such as an etching process or an ashing process as a predetermined plasma treatment. In addition, in a plasma processing device that performs a sputtering method, a target material is, for example, disposed inside a plasma generation region HA described later.

[0029] <Structure of plasma processing apparatus 1>

[0030] like Figure 1As shown, the plasma processing apparatus 1 of the present embodiment 1 includes a housing 2, a flange 3, a vacuum cover 4, an antenna cover 5, and a stage 6. In addition, the plasma processing apparatus 1 includes an antenna 8, a control unit C, and a stage drive unit SD. Furthermore, in the plasma processing apparatus 1, the sample H1 to be processed is transported between the stage 6 and a known load lock chamber by a transport mechanism (not shown).

[0031] like Figure 2 As shown, the plasma processing device 1 is provided with a plurality of antennas 8, for example, four antennas 8, and a vacuum cover 4 and an antenna cover 5 are provided for each antenna 8. In addition, the plasma processing device 1 includes a photographing unit K and an illumination unit L. In addition, as shown Figure 3 As shown, the plasma processing apparatus 1 includes a display unit DP, an operation receiving unit TP, a communication interface unit IN, and a storage unit M.

[0032] The processed sample H1 may be, for example, a glass substrate or a synthetic resin substrate used in a liquid crystal panel display, an organic electroluminescence (EL) panel display, etc. In addition, the processed sample H1 may be a semiconductor substrate used for various purposes. In addition to forming a prescribed film such as a barrier (moisture-proof) film on the processed sample H1 by the prescribed plasma treatment, the plasma processing device 1 also etches or modifies the surface of at least a portion of the surface or coating. In addition, in addition to the processed sample H1, structures such as fixtures such as bolts or metal parts that are three-dimensional and have a relatively complex shape may also be used as processed objects.

[0033] <Case 2>

[0034] The housing 2 includes a housing body 2a, the housing body 2a is used to form a processing chamber for performing the prescribed plasma treatment on the processed sample H1, and a first opening 2b for connecting the inside of the processing chamber with the outside is provided at the upper part of the housing body 2a. In the plasma processing device 1 of the present embodiment, the housing 2 has a box-shaped housing body 2a with an upper opening, and a flange 3 having a plurality of openings is airtightly mounted on the upper surface side of the housing 2 (housing body 2a). In the plasma processing device 1, when the flange 3 is mounted on the housing body 2a, the opening of the flange 3 is included in the first opening 2b for connecting the inside of the processing chamber with the outside. In other words, when the flange 3 and the vacuum cover 4 are mounted on the upper surface side of the housing 2, the first opening 2b is blocked by the flange 3 and the vacuum cover 4.

[0035] <Flange 3>

[0036] like Figure 2As shown, the flange 3 includes, for example, a rectangular frame having two first sides 3a facing each other, and two second sides 3b (3b) that are orthogonal to the first sides 3a and facing each other. Figure 1 ). In addition, the flange 3 includes, for example, a third side portion 3c, a fourth side portion 3d, and a fifth side portion 3e provided on the inner side of the frame body from one of the second side portions 3b to the other second side portion 3b. In other words, both ends of the third side portion 3c, the fourth side portion 3d, and the fifth side portion 3e are formed continuously with the second side portion 3b. The third side portion 3c, the fourth side portion 3d, and the fifth side portion 3e may be formed between the two first side portions 3a so as to be parallel to the first side portion 3a.

[0037] In addition, the first side 3a, the second side 3b, the third side 3c, the fourth side 3d, and the fifth side 3e may respectively have a protrusion described later that protrudes toward the first opening 2b side. In addition, in the following description, the first side 3a, the second side 3b, the third side 3c, the fourth side 3d, and the fifth side 3e are collectively referred to as side 3h.

[0038] <Vacuum cover 4>

[0039] In addition, in the plasma processing device 1, the vacuum cover 4 that blocks the first opening 2b is configured to be installed in the first opening 2b in a detachable manner. That is, the vacuum cover 4 is airtightly installed on the flange 3 in a manner of blocking the first opening 2b, and is reversibly installed to be detachable from the flange 3. Here, the flange 3 may have a protrusion, and the protrusion is formed to gradually reduce the opening area of ​​the first opening 2b in a direction from the outside of the processing chamber toward the inside of the processing chamber. For example, the first side 3a, the third side 3c, the fourth side 3d, and the fifth side 3e may each have a first support portion protruding in a manner of locking the peripheral portion of the vacuum cover 4 inside the first opening 2b. The first support portion may be a part of the protrusion. In addition, the vacuum cover 4 is an example of an outer cover, which abuts on the upper surface of the second side 3b, and abuts on the upper surface of the first support portion among the first side 3a, the third side 3c, the fourth side 3d, and the fifth side 3e to be supported. The vacuum cover 4 is made of metal, for example.

[0040] <Radome 5>

[0041] In addition, in the plasma processing apparatus 1, the antenna cover 5 is supported inside the first opening 2b in a manner that it can be removed from the flange 3. Specifically, Figure 1 and Figure 2As shown, the antenna cover 5 includes, for example, an antenna housing portion 5a having a U-shaped cross section. In addition, the antenna cover 5 includes a cover support portion 5b and a cover opening portion 5c. The cover support portion 5b is a flange portion formed continuously from both ends of the antenna housing portion 5a having a U-shaped cross section and formed in a manner extending outward from the ends of the antenna housing portion 5a. That is, the cover support portion 5b has an outward flange shape.

[0042] Here, for example, the side portion 3h of the flange 3 may have a second support portion protruding inside the first opening 2b so as to lock the peripheral portion of the antenna cover 5. The second support portion is a part of the protruding portion, and protrudes further toward the inside of the first opening 2b than the first support portion (the protruding length is larger). When the antenna cover 5 is supported inside the first opening 2b, the cover support portion 5b is supported by (the second support portion of) the side portion 3h of the flange 3. In addition, the antenna cover 5 has a cover opening 5c ​​formed by being surrounded by the antenna accommodating portion 5a.

[0043] In addition, the antenna cover 5 is made of a dielectric material such as alumina, and constitutes an inner cover having dielectric properties. In addition, in the antenna cover 5, the antenna housing portion 5a is formed in a manner corresponding to the shape of the antenna 8. The antenna housing portion 5a is configured to cover a portion of the outer peripheral surface of the antenna 8 when the antenna 8 is installed. In addition, in the antenna cover 5, the cover support portion 5b is supported on the edge portion 3h of the flange 3 in a detachable manner. Furthermore, in the antenna cover 5, the cover opening portion 5c is provided in a manner opening on the vacuum cover 4 side. The cover opening portion 5c is an example of a second opening portion constituting a portion of the antenna housing space AK described later.

[0044] In addition, an antenna accommodation space AK surrounded by at least a vacuum cover 4 and an antenna cover 5 is formed in the housing 2. In the plasma processing device 1 of the present embodiment, the antenna accommodation space AK is also surrounded by the inner wall surface of the flange 3. The antenna accommodation space AK is an example of an enclosed space, and an antenna 8 for generating inductively coupled plasma is accommodated. However, in the antenna accommodation space AK, the size of the space is set to a size that cannot sustain the plasma generated by the antenna 8, and thus functions as a plasma non-generating area.

[0045] <Antenna 8>

[0046] The antenna 8 is cylindrical, for example, and is made of a metal material such as copper. One end and the other end of the antenna 8 are electrically insulated from the vacuum cover 4 via the antenna insulating portion 13A and the antenna insulating portion 13B, respectively, and are pulled out of the housing 2 in an airtight manner.

[0047] In addition, a cooler 12 is connected to the antenna 8, and the antenna 8 is cooled to a predetermined temperature by a cooling medium, such as cooling water, that circulates through the cooler 12. Specifically, the cooler 12 includes: a cooler body 12a, which includes a driving unit such as a pump (not shown) for circulating cooling water; and a pipe 12b, which is airtightly connected to the cooler body 12a. In addition, the pipe 12b is also arranged in the internal space of the antenna 8, and is configured to use the internal space of the antenna 8 as a circulation path for cooling water. That is, in the antenna 8, as shown in FIG. Figure 1 As indicated by arrows R1 and R2 , the antenna 8 is cooled by causing cooling water to flow through the inner space of the antenna 8 .

[0048] In addition, an impedance adjusting unit 10 and an impedance adjusting unit 11 are electrically connected to one end and the other end of the antenna 8, respectively. The impedance adjusting unit 10 includes a matching circuit (not shown), and one end of the antenna 8 is connected to the power supply 9 via the matching circuit. In addition, the impedance adjusting unit 11 includes a variable capacitor, and the other end of the antenna 8 is electrically grounded via the variable capacitor.

[0049] The power supply 9 supplies, for example, 13.56 MHz high frequency power to one end of the antenna 8 via the impedance adjuster 10. In the plasma processing apparatus 1, the control unit C controls the antenna 8 to efficiently supply high frequency power by changing the capacitance of the variable capacitor of the impedance adjuster 11.

[0050] In addition, in the first embodiment, the power source 9, the impedance adjustment unit 10, and the impedance adjustment unit 11 are provided for each antenna 8, and the control unit C can perform generation control of plasma generated in each antenna 8 by controlling the power source 9 for each antenna 8. Therefore, in the first embodiment, the control unit C can make the antenna 8 operate more appropriately and can reliably suppress the generation of plasma in the antenna accommodation space AK. As a result, in the first embodiment, the generation of damage to the antenna 8 can be more reliably suppressed.

[0051] In the first embodiment, each power source 9 is configured to intermittently generate plasma obtained by the antenna 8 by periodically increasing and decreasing the magnitude of the high-frequency current supplied to the corresponding antenna 8 .

[0052] In addition, in the housing 2, by installing the antenna cover 5 inside the first opening 2b, the internal space of the housing 2 is delimited and a plasma generation area HA is formed inside the housing body 2a. A stage 6 and a processed sample H1 supported by the stage 6 are arranged inside the plasma generation area HA, and the plasma generation area HA substantially constitutes the processing chamber. In other words, in the housing 2, the plasma generation area HA is separated from the plasma non-generation area by the antenna cover 5.

[0053] Furthermore, in the housing 2, the flange 3 and the vacuum cover 4 are respectively airtightly mounted to the housing body 2a and the flange 3, thereby forming a vacuum container including the processing chamber. Figure 1 As shown, in the housing 2, a vacuum pump PO is connected to the housing body 2a, and the control unit C controls the vacuum pump PO, whereby the interior of the plasma generation area HA is brought into a predetermined vacuum degree at least during plasma processing.

[0054] Specifically, in the shell 2, the vacuum pump PO is used to exhaust gas, so that the pressure in the plasma generation area HA is reduced, and the pressure in the antenna accommodation space AK is also reduced. The reason for this is that the portion where the antenna cover 5 and the shell 2 are connected to each other is not vacuum-sealed, and the plasma generation area HA and the antenna accommodation space AK are connected to each other via a gap. The antenna accommodation space AK is narrower than the plasma generation area HA and becomes an area where it is difficult to generate and maintain plasma (plasma non-generation area). When the antenna 8 is energized to generate plasma in the plasma generation area HA, the gas pressure in the antenna accommodation space AK can be the same as that in the plasma generation area HA, for example, 1Pa to 100Pa. In addition, if Figure 1 As shown, the housing 2 and the carrier 6 are electrically grounded respectively.

[0055] In addition, a pressure gauge (not shown) for detecting the pressure (vacuum degree) inside the plasma generation area HA is provided in the housing 2, and the control unit C controls the vacuum degree inside the plasma generation area HA using the detection result of the pressure gauge.

[0056] In addition, the housing 2 includes a processing gas supply unit (not shown) corresponding to the predetermined plasma processing, and the plasma processing is performed under the processing gas atmosphere. The processing gas supply unit introduces a processing gas including a film-forming gas for the film into the plasma generation area HA (processing chamber) of the housing 2. In addition, the processing gas is, for example, argon, hydrogen, nitrogen, silane or oxygen.

[0057] In addition, a temperature sensor (not shown) for detecting the temperature of the stage 6 is provided in the housing 2, and the detection result of the temperature sensor is output to the control unit C. Then, the control unit C controls the stage 6 to a predetermined set temperature during the plasma processing by performing feedback control using the input detection result of the temperature sensor.

[0058] In addition, if Figure 1As shown, a stage driving unit SD for driving the stage 6 is provided in the housing 2. The stage driving unit SD includes a driving mechanism such as a motor (not shown), and is configured to perform a predetermined driving operation on the stage 6 according to an instruction from the control unit C. Specifically, the stage driving unit SD causes the stage 6 with the processed sample H1 placed thereon to swing, rotate, or lift the stage 6, for example, inside the housing 2.

[0059] <Display unit DP and operation receiving unit TP>

[0060] The display unit DP includes a display device such as a liquid crystal display (not shown), and displays predetermined information to the user according to the instruction from the control unit C. The operation receiving unit TP is provided with predetermined operation members such as operation buttons (not shown), and receives the instructions from the user to the plasma processing apparatus 1 through the operation of the user, and notifies the control unit C. In addition to the above description, for example, a touch panel may be integrally provided in the display device of the display unit DP, so that the display unit DP also functions as the operation receiving unit TP of the plasma processing apparatus 1.

[0061] <Photography Department K and Lighting Department L>

[0062] like Figure 2 As illustrated, the photographing unit K and the lighting unit L are, for example, integrally provided on the fourth side portion 3d of the flange 3. The photographing unit K includes, for example, a photographing element such as a charge coupled device (CCD) or a complementary metal oxide semiconductor (CMOS). In the plasma processing device 1 of the first embodiment, the photographing unit K constitutes a first photographing unit for photographing the interior of the processing chamber. In addition, in the plasma processing device 1 of the first embodiment, the photographing unit K constitutes a second photographing unit for photographing the plasma generated inside the processing chamber. In other words, the plasma processing device 1 of the first embodiment includes the photographing unit K which is the first photographing unit and also serves as the second photographing unit. In addition, the lighting unit L includes, for example, a light emitting component such as a lamp or a light emitting diode (LED), and illuminates the interior of the processing chamber by emitting a predetermined illumination light from the light emitting component.

[0063] <Communication interface unit IN and storage unit M>

[0064] The communication interface IN performs bidirectional data communication with an external device (e.g., a computer terminal) of the plasma processing apparatus 1 via a wired or wireless network according to instructions from the control unit C. The storage unit M is a memory that is configured using, for example, a random access memory (RAM) or a nonvolatile memory (NVM) and that can read and write information. The storage unit M stores a predetermined program used in the control unit C and predetermined information such as data of a first image described later.

[0065] <Control Unit C>

[0066] The control unit C is a functional block that includes, for example, a central processing unit (CPU), a random access memory (RAM), a read only memory (ROM), etc., and performs information processing to control various parts of the plasma processing device 1. Specifically, the control unit C performs a predetermined control process on the plasma processing of the sample H1 to be processed in the plasma generation area HA.

[0067] In addition, if Figure 3 As shown, the control unit C includes a power control unit C1, a shooting control unit C2, an illumination control unit C3, a display control unit C4, a communication control unit C5, and a stage control unit C6. The power control unit C1 is a functional block for controlling the power supply 9. The shooting control unit C2 is a functional block for controlling the shooting unit K. The illumination control unit C3 is a functional block for controlling the illumination unit L.

[0068] The display control unit C4 is a functional block that controls the display unit DP. The communication control unit C5 is a functional block that controls the communication interface unit IN. The stage control unit C6 is a functional block that controls the stage drive unit SD. In the control unit C, according to instructions from the user received via the operation acceptance unit TP or the communication interface unit IN, the power control unit C1, the shooting control unit C2, the lighting control unit C3, the display control unit C4, the communication control unit C5 and the stage control unit C6 respectively control the power supply 9, the shooting unit K, the lighting unit L, the display unit DP, the communication interface unit IN and the stage drive unit SD.

[0069] <Operation Example of Plasma Processing Device 1>

[0070] See also below Figure 4 and Figure 5An operation example of the plasma processing apparatus 1 according to Embodiment 1 will be described in detail. In the following description, a specific example of the display operation in the display portion DP will be mainly described. Figure 4 Yes Figure 3 A diagram for explaining a specific example of display contents on the display unit DP shown. Figure 5 Yes Figure 3 FIG. 1 is a diagram for explaining the operation timing of the imaging operation of the imaging unit K shown in FIG.

[0071] In the plasma processing apparatus 1 of the first embodiment, when receiving a start instruction of a plasma processing operation from a user, first, the power supply control unit C1 controls the power supply 9 so that the magnitude of the high frequency current flowing to the antenna 8 is periodically increased or decreased.

[0072] In other words, the power control unit C1 controls the power supply 9 so that the magnitude of the high-frequency current changes in a manner that alternately becomes a prescribed first current value and a prescribed second current value according to a prescribed time interval. In addition, one of these first current values ​​and second current values ​​may be a zero value, and the power control unit C1 may also turn the power supply 9 on or off to supply the high-frequency current to the antenna 8 or stop the high-frequency current. Thus, in the plasma processing device 1 of the present embodiment 1, a plasma generation process of intermittently generating plasma is performed inside the shell (processing chamber) 2. In addition, when the power supply 9 is turned on or off, the plasma inside the shell 2 is lit or extinguished, respectively.

[0073] In addition, in the plasma generation process, the imaging control unit C2 of the control unit C controls the imaging unit K so that the imaging unit K images the plasma generated inside the processing chamber in synchronization with the lighting of the plasma. In other words, when the high-frequency current is turned on, the imaging unit K performs an imaging operation. Thus, in the plasma processing device 1 of the first embodiment, a second image acquisition process is performed to acquire an image of the plasma synchronized with the lighting of the plasma inside the processing chamber as a second image. The data of the second image acquired by the second image acquisition process is stored and maintained in the storage unit M.

[0074] Next, in the plasma processing apparatus 1 of the present embodiment 1, the imaging control unit C2 of the control unit C controls the imaging unit K to perform a first image acquisition process of acquiring an image of the interior of the processing chamber synchronized with the extinguishing of the plasma inside the processing chamber as a first image. In other words, when the high-frequency current is turned off, the imaging unit K performs an imaging operation. The data of the first image acquired by the first image acquisition process is stored and held in the storage unit M.

[0075] In addition, in the first image acquisition process, the lighting control unit C3 controls the lighting unit L so as to illuminate the interior of the processing chamber in synchronization with the extinction of the plasma. Thus, the imaging unit K can acquire a first image by imaging the processed sample H1 irradiated with a predetermined illumination light from the lighting unit L and at a predetermined illumination intensity. As a result, in the plasma processing device 1 of the first embodiment, the processed sample H1 subjected to plasma treatment is illuminated by the illumination light from the lighting unit L and captured as a first image, so that the first image can be acquired with high precision while eliminating the influence of the light emission of the plasma. Furthermore, in the plasma processing device 1 of the first embodiment, the lighting unit L synchronizes the acquisition timing of the first image acquired by the imaging unit K with the extinction of the plasma, so that a high-definition first image can be easily acquired.

[0076] Next, in the plasma processing apparatus 1 of the first embodiment, the display control unit C4 of the control unit C reads the data of the first image and the data of the second image from the storage unit M by referring to the storage unit M, and displays the first image and the second image in a row on the display unit DP.

[0077] In addition to the above description, the following configuration may be adopted, that is, the communication control unit C5 of the control unit C reads the data of the first image and the data of the second image from the storage unit M by referring to the storage unit M, and transmits at least the first image of the first image and the second image to the external device via the communication interface unit IN. As a result, the state of the plasma in the plasma treatment and the state of at least the sample H1 to be treated by the plasma treatment can be grasped in real time in the external device.

[0078] Specifically, if Figure 4 As shown in FIG. 1 , the display control unit C4 displays the second image and the first image in the first display area DP1 and the second display area DP2 set in the display unit DP, respectively. Figure 4 As shown, predetermined information such as plasma processing conditions is displayed in the third display area DP3 set in the display unit DP.

[0079] In addition, if Figure 5As shown, in the plasma processing device 1 of the present embodiment 1, the photographing action of the photographing unit K is performed synchronously with the plasma luminous intensity inside the processing chamber. Specifically, the power supply control unit C1 turns on the power supply 9 to make the high-frequency current flow through the antenna 8 and light up the plasma inside the shell 2. During the period TA when the plasma is lit inside the shell 2, the photographing unit K functions as the second photographing unit to photograph the plasma at the same timing as the lighting of the plasma. In addition, the power supply control unit C1 stops the supply of the high-frequency current to the antenna 8 and extinguishes the plasma by turning off the power supply 9. During the period TB when the plasma is extinguished inside the shell 2, the photographing unit K functions as the first photographing unit to photograph the inside of the processing chamber, that is, the processed sample H1 subjected to plasma treatment, at the same timing as the extinguishing of the plasma.

[0080] In addition, in the plasma processing apparatus 1 of the first embodiment, Figure 5 As shown, the period TA and the period TB are alternately set until the plasma treatment of the sample H1 is completed. In addition, regarding the specific time sizes of these periods TA and TB, for example, when the plasma treatment is a pulse plasma treatment in which the plasma is repeatedly turned on / off and the cycle is, for example, 1 msec, the values ​​are, for example, in the range of 0.9 msec to 0.1 msec and in the range of 0.1 msec to 0.9 msec, respectively. Specifically, for example, a plasma on time of 0.8 msec and a plasma off time of 0.2 msec can be set.

[0081] In the plasma processing apparatus 1 of the first embodiment configured as described above, the control unit C controls the imaging unit K to obtain an image of the interior of the housing (processing chamber) 2 synchronized with the extinguishing of the plasma as the first image. Thus, in the first embodiment, a plasma processing apparatus can be configured that can grasp the state of the sample to be processed (processed object) H1 to which the plasma processing is performed, for example, the state of the color tone or shape obtained from the actual image of the sample to be processed H1 in real time.

[0082] In addition, in the plasma processing apparatus 1 of the first embodiment, Figure 4 As shown, the first image and the second image are simultaneously displayed on the display unit DP, so that a more accurate state of the processed sample H1 can be grasped in real time.

[0083] [Implementation method 2]

[0084] use Figure 6 and Figure 7 Embodiment 2 of the present disclosure will be described in detail. Figure 6This is a cross-sectional view for explaining the structure of a plasma processing apparatus 1 according to a second embodiment of the present disclosure. Figure 7 Yes means Figure 6 1 is a functional block diagram of a main structure of the plasma processing apparatus 1. For convenience of description, components having the same functions as those described in the first embodiment are denoted by the same reference numerals, and description thereof will not be repeated.

[0085] The main difference between the second embodiment and the first embodiment is that the plasma emission monitor PM is provided in the casing 2 .

[0086] like Figure 6 As shown in FIG. 1 , in the plasma processing apparatus 1 of the second embodiment, the plasma emission monitor PM is provided in the housing body 2a. The plasma emission monitor PM monitors the plasma generated inside the housing 2 during the plasma processing. The plasma emission monitor PM is controlled by a monitor control unit C7 ( Figure 7 ) for control.

[0087] Specifically, the plasma emission monitor PM includes, for example, a light receiving element for detecting light from the plasma inside the housing 2, and a spectrometer (not shown) for spectroscopically splitting the detection light detected by the light receiving element. In the plasma emission monitor PM, the spectrometer obtains the wavelength spectrum of the light received by the light receiving element (i.e., the emission spectrum of the plasma), and outputs it to the monitor control unit C7. The monitor control unit C7 obtains the emission intensity of the plasma generated inside the housing 2 based on the required spectral intensity (the intensity of the required wavelength band in the wavelength spectrum).

[0088] In addition, the monitor control unit C7 also functions as an optical emission spectrometer and is configured to perform a predetermined spectroscopic analysis process on the detection light of the light receiving element. Thus, in the monitor control unit C7, when plasma is generated inside the housing 2, the elements and the concentrations of the elements contained in the plasma can be detected based on the spectroscopic analysis results. In addition, the emission intensity and spectroscopic analysis results of the plasma, the detection results of the plasma emission monitor PM, and the specific examples of predetermined emission data related to the plasma are provided.

[0089] In the plasma processing apparatus 1 of the second embodiment, the display control unit C4 displays, for example, the first image and the detection result of the plasma emission monitor PM side by side on the display unit DP.

[0090] <Operation Example of Plasma Processing Device 1>

[0091] Here, also refer to Figure 8 and Fig. 9 An operation example of the plasma processing apparatus 1 according to Embodiment 2 will be described in detail. In the following description, a specific example of the display operation in the display portion DP will be mainly described. Figure 8 Yes Figure 7 A diagram for explaining a specific example of display contents on the display unit DP shown. Fig. 9 Yes Figure 7 FIG. 1 is a diagram for explaining the operation timing of the imaging operation of the imaging unit K shown in FIG.

[0092] like Figure 8 As shown, the display control unit C4 displays the detection results of the plasma light emission monitor PM, such as the light emission spectrum and the first image, in the first display area DP1 and the second display area DP2 set in the display unit DP. Figure 8 As shown, in the third display area DP3 set in the display part DP, predetermined information such as plasma processing conditions is displayed.

[0093] In addition, the user can visually recognize the emission spectrum displayed in the first display area DP1 and recognize that the emission amount of light of a wavelength corresponding to a material such as silicon is reduced by the plasma treatment, for example. In other words, the user can understand the progress of the plasma treatment.

[0094] In addition, if Fig. 9 As shown, in the plasma processing apparatus 1 of the second embodiment, the imaging operation of the imaging unit K is performed synchronously with the plasma emission intensity inside the processing chamber. Specifically, during the period TC when the power supply control unit C1 turns on the power supply 9 and there is an output from the power supply 9, the imaging unit K functions as the second imaging unit to image the plasma generated inside the housing 2. In addition, during the period TD when the power supply control unit C1 turns off the power supply 9 and the output from the power supply 9 is zero, the imaging unit K functions as the first imaging unit to image the inside of the processing chamber, that is, the processed sample H1 subjected to plasma processing.

[0095] According to the above configuration, the plasma processing apparatus 1 of the second embodiment achieves the same effects as those of the first embodiment.

[0096] In addition, in the plasma processing apparatus 1 of the second embodiment, the predetermined emission data related to the plasma is acquired based on the detection result of the plasma emission monitor PM, so that the state of the plasma can be more accurately grasped, and thus the state of the processed sample H1 can be more accurately grasped. In addition, in the plasma processing apparatus 1 of the second embodiment, the first image and the detection result of the plasma emission monitor are simultaneously displayed on the display unit DP, so that a more accurate state of the processed sample H1 can be grasped in real time.

[0097] [Variation]

[0098] use Fig.10 Modifications of the present disclosure will be described in detail. Fig.10 This figure explains a specific example of the display content on the display unit DP of the plasma processing apparatus 1 according to the modification of the present disclosure. For convenience of description, components having the same functions as those described in the second embodiment are denoted by the same reference numerals, and their description will not be repeated.

[0099] The main difference between the modification example and the second embodiment is that the display control unit C4 displays a graph of the temporal change of the plasma emission intensity on the display unit DP.

[0100] In the plasma processing apparatus 1 of this modification, the monitor control unit C7 calculates the temporal change of the plasma emission intensity based on the detection result of the plasma emission monitor PM. Fig.10 As shown, the display control unit C4 displays, for example, a graph showing the temporal change in plasma emission intensity in the first display area DP1 set on the display unit DP.

[0101] According to the above configuration, the plasma processing apparatus 1 of this modification can achieve the same effects as those of the second embodiment.

[0102] Furthermore, in the above description, for example, Fig. 9 As shown in the figure, the case where the second image and the first image are photographed synchronously with the turning on and off of the power supply 9 is described. However, the present disclosure is not limited to this. For example, the plasma luminescence intensity may be detected, and the first image may be photographed at the time point when the detected value becomes below a predetermined threshold value. In addition, for example, the period of the plasma luminescence waveform may be detected, and the first image may be photographed synchronously with the period. Thus, even in the case of luminescence of free radicals with a relatively long lifespan remaining shortly after the supply of high-frequency current to the antenna 8 is stopped, it is possible to more reliably photograph at a timing with less noise when the plasma is extinguished.

[0103] In addition, in the above description, the case where the first image and the second image or the detection result of the plasma light emission monitor are displayed in parallel on the display unit DP is described, but the present disclosure is not limited in any way as long as the state of the object to be processed by the plasma treatment can be grasped in real time. For example, the first image, the second image and the detection result of the plasma light emission monitor may be displayed in parallel on the display unit DP.

[0104] In addition, in the above description, the structure using the imaging unit K that serves as both the first imaging unit and the second imaging unit is described, but the present disclosure is not limited thereto, and the first imaging unit and the second imaging unit may be constituted by separate imaging units. However, as in the above embodiment, the case where the imaging unit K that serves as both the first imaging unit and the second imaging unit is used is preferred in that the structure of the imaging unit that captures the interior of the processing chamber can be simplified, thereby simplifying the structure of the plasma processing apparatus 1.

[0105] In addition, in addition to the above description, the housing (processing chamber) 2 does not necessarily have to be a vacuum, and the housing 2 may be a structure that generates atmospheric pressure plasma or plasma in liquid, for example. In the above case, the sample H1 to be processed may be a part of the skin of various plants or animals, or a cell, etc., and the plasma processing device 1 not only performs surface modification of the sample H1 to be processed, but also supplies active species such as free radicals or ions activated by plasma to the surface or the inside. In the above case, it is very important to grasp the state of the sample H1 to be processed by plasma in real time, such as the color tone or shape obtained from the actual image of the sample H1 to be processed, so that the most preferred processing conditions can be further set or the plasma processing can be performed.

[0106] 〔Summarize〕

[0107] In order to solve the above-mentioned problem, a plasma processing device according to a first embodiment of the present disclosure includes: a processing chamber; an antenna for generating a magnetic field for generating plasma inside the processing chamber; a power supply for supplying a high-frequency current for generating the magnetic field to the antenna; a first imaging unit for imaging the inside of the processing chamber; and a control unit, wherein the power supply intermittently generates the plasma by periodically increasing and decreasing the magnitude of the high-frequency current, and the control unit controls the first imaging unit to obtain an image of the inside of the processing chamber synchronized with the extinction of the plasma as a first image.

[0108] With the above configuration, it is possible to provide a plasma processing apparatus capable of grasping the state of an object to be processed by plasma processing in real time.

[0109] The second embodiment of the present disclosure is a plasma processing apparatus according to the first embodiment, and further includes a lighting unit configured to illuminate the interior of the processing chamber.

[0110] According to the above configuration, the illumination unit can illuminate the object to be processed by plasma processing with predetermined illumination light, and thus the first image can be acquired with high definition.

[0111] In the third embodiment of the present disclosure, for example, the plasma processing apparatus of the second embodiment, the lighting unit may illuminate the interior of the processing chamber in synchronization with the extinguishing of the plasma.

[0112] According to the above configuration, the illumination unit synchronizes the timing of acquiring the first image by the first imaging unit with the extinguishing of the plasma, and thus can easily acquire the first image with high accuracy.

[0113] The fourth embodiment of the present disclosure may be a plasma processing apparatus such as any one of the first to third embodiments, and may further include a plasma luminescence monitor for monitoring plasma generated inside the processing chamber.

[0114] With the above structure, it is possible to obtain predetermined emission data related to the plasma based on the detection result of the plasma emission monitor, so that the state of the plasma and the state of the object to be processed can be more accurately grasped.

[0115] The fifth embodiment of the present disclosure, such as the plasma processing apparatus of the fourth embodiment, may further include a display unit, and the control unit arranges and displays the first image and the detection result of the plasma luminescence monitor on the display unit.

[0116] According to the above configuration, the first image and the detection result of the plasma emission monitor are simultaneously displayed on the display unit, so that a more accurate state of the object to be processed can be grasped in real time.

[0117] The sixth embodiment of the present disclosure, such as the plasma processing device of any one of the first to fifth embodiments, may further include a second shooting unit, which shoots the plasma, and the control unit controls the second shooting unit to obtain an image of the plasma synchronized with the lighting of the plasma as a second image.

[0118] According to the above configuration, since an image of the plasma synchronized with the lighting of the plasma is acquired as the second image, a more accurate state of the object to be processed can be grasped in real time.

[0119] In the seventh embodiment of the present disclosure, for example, the plasma processing apparatus of the sixth embodiment, the first imaging unit may also serve as the second imaging unit.

[0120] With the above configuration, the structure of the imaging unit that images the interior of the processing chamber can be simplified, and thus the structure of the plasma processing apparatus can be simplified.

[0121] The eighth embodiment of the present disclosure, such as the plasma processing apparatus of the sixth embodiment or the seventh embodiment, may further include a display unit, and the control unit arranges and displays the first image and the second image on the display unit.

[0122] According to the above configuration, since the first image and the second image are displayed on the display unit at the same time, a more accurate state of the object to be processed can be grasped in real time.

[0123] The ninth embodiment of the present disclosure, such as the plasma processing device of any one of the first to eighth embodiments, may further include a communication interface unit, which can be connected to an external device, and the control unit controls the communication interface unit to send the first image to the external device.

[0124] According to the above configuration, since the first image is transmitted to the external device via the communication interface unit, the state of the object to be processed by the plasma treatment can be grasped in real time in the external device.

[0125] In the processing method of the plasma processing device of the tenth embodiment of the present disclosure, the plasma processing device includes: a processing chamber; an antenna that generates a magnetic field for generating plasma inside the processing chamber; a power supply that supplies a high-frequency current for generating the magnetic field to the antenna; and a first imaging unit that images the inside of the processing chamber, and the processing method of the plasma processing device includes: a plasma generating step, in which the plasma is intermittently generated by periodically increasing and decreasing the magnitude of the high-frequency current using the power supply; and a first image acquisition step, in which the image of the inside of the processing chamber synchronized with the extinction of the plasma is acquired as a first image by the first imaging unit. In the above case, the same effect as the first embodiment is achieved.

[0126] The present disclosure is not limited to the above-described embodiments and modifications, and various modifications can be made within the scope of the claims. Embodiments obtained by appropriately combining technical means disclosed in different embodiments and modifications are also included in the technical scope of the present disclosure.

[0127] Description of Figure Numbers

[0128] 1: Plasma treatment device

[0129] 2: Shell (processing chamber)

[0130] 8: Antenna

[0131] 9: Power supply

[0132] C: Control Department

[0133] K: Shooting unit (first shooting unit, second shooting unit)

[0134] L: Lighting Department

[0135] PM: Plasma Luminescence Monitor

[0136] DP: Display unit

[0137] IN: Communication interface

Claims

1. A plasma processing device, comprising: Processing room; an antenna that generates a magnetic field for generating plasma inside the processing chamber; a power supply for supplying a high-frequency current to the antenna for generating the magnetic field; A first photographing unit, for photographing the interior of the processing chamber; and Control Department, The power supply The plasma is intermittently generated by periodically increasing and decreasing the magnitude of the high frequency current, The control unit The first imaging unit is controlled to acquire an image of the interior of the processing chamber synchronized with the extinguishing of the plasma as a first image. 2 . The plasma processing apparatus according to claim 1 , further comprising a lighting unit configured to illuminate the interior of the processing chamber.

3. The plasma processing apparatus according to claim 2, wherein: The lighting unit illuminates the interior of the processing chamber in synchronization with the extinction of the plasma. 4 . The plasma processing apparatus according to claim 1 , further comprising a plasma emission monitor configured to monitor plasma generated inside the processing chamber.

5. The plasma processing apparatus according to claim 4, further comprising a display unit, The control unit The first image and the detection result of the plasma emission monitor are displayed side by side on the display unit.

6. The plasma processing apparatus according to any one of claims 1 to 3, further comprising a second imaging unit configured to image the plasma. The control unit The second imaging unit is controlled to acquire an image of the plasma synchronized with lighting of the plasma as a second image.

7. The plasma processing apparatus according to claim 6, wherein: The first imaging unit also serves as the second imaging unit.

8. The plasma processing apparatus according to claim 6 or 7, further comprising a display unit, The control unit The first image and the second image are displayed side by side on the display unit.

9. The plasma processing apparatus according to any one of claims 1 to 3, further comprising a communication interface unit, wherein the communication interface unit can be connected to an external device. The control unit The communication interface unit is controlled to transmit the first image to the external device.

10. A processing method of a plasma processing device, the plasma processing device comprising: Processing room; an antenna that generates a magnetic field for generating plasma inside the processing chamber; a power supply for supplying a high-frequency current to the antenna for generating the magnetic field; and a first photographing unit for photographing the interior of the processing chamber. The processing method of the plasma processing device includes: a plasma generating step of intermittently generating the plasma by periodically increasing and decreasing the magnitude of the high frequency current using the power supply; as well as In the first image acquisition step, the first imaging unit acquires, as a first image, an image of the interior of the processing chamber synchronized with the extinguishing of the plasma.

Images