Method for manufacturing bonded light-emitting element wafer

Abstract

The present invention is a method for manufacturing a bonded light-emitting element wafer in which a defective portion has been removed, the method being characterized in that: the bonded light-emitting element wafer is formed from a plurality of bonded light-emitting elements; the method comprises the steps of: bonding a light-emitting element structure, which is a micro LED, to a substrate to be bonded, which is transparent to the laser light for LLO transfer, using an adhesive that absorbs the laser light for LLO transfer, to obtain a bonded wafer; a step of optically investigating a defective portion of the bonded wafer and creating map data for removal; and a step in which, on the basis of the removal map data, a removal laser beam is incident on a defective portion of the bonded wafer, and a portion included in the defective portion of the light-emitting element structure is sublimated, thereby removing the portion included in the defective portion of the light-emitting element structure, and obtaining a bonded light-emitting element wafer. As a result, provided is a method for manufacturing a bonded light-emitting element wafer, said method being capable of manufacturing a bonded light-emitting element wafer by selectively removing defective portions of a light-emitting element structure, which is a micro-LED, coupled to a wafer to be bonded via an adhesive.

Description

Technical Field

[0001] The present invention relates to a method for manufacturing a junction type light emitting element wafer, and more particularly to a method for manufacturing a junction type light emitting element wafer from which defective portions are removed. Background Art

[0002] A technology for bonding wafers via benzocyclobutene (BCB) is disclosed as a wafer for AlGaInP-based micro light-emitting diodes (micro LED, μ-LED).

[0003] In the above-mentioned wafers, since the wafers are bonded to each other, a bonding defect may occur due to the surface conditions of the bonding wafer and the bonded wafer, or the presence of foreign matter in the epitaxial layer or the bonding interface.

[0004] In most cases, the poorly bonded portion becomes a convex shape, which leads to a decrease in shape or size accuracy during the device structure manufacturing process, especially when processing by photolithography.

[0005] Furthermore, when a μ-LED die produced from a wafer having such a convex defective portion is transferred to a transfer substrate, uneven pressure is applied to the convex portion, causing transfer failure.

[0006] Therefore, when transferring a device from a wafer on which a junction-type μ-LED is formed, it is necessary to remove the defective portion that has become a convex shape before the transfer.

[0007] In the case of conventional LED dies based on discrete devices, there are various methods for physically removing defective parts.

[0008] For example, Patent Document 1 discloses a technique for holding crystal grains by adsorption. However, when holding by adsorption with a single plate, the premise is that the height of all crystal grains falls within a certain tolerance range. When a convex portion is generated on the wafer before device fabrication due to poor bonding, the height of the crystal grain after device processing will be uneven. Therefore, in the prior art illustrated here, defects will occur during displacement. In addition, since it is a batch displacement, it is not a technique that can selectively remove defective parts.

[0009] Patent Document 2 discloses a technique for picking up a crystal grain by electrostatic means. However, similarly to Patent Document 1, this method is based on the premise of picking up a crystal grain by a single plate-shaped jig and cannot be applied when a convex portion is generated.

[0010] Patent document 3 discloses a technique for optically detecting defects and mechanically removing defective grains. In order to mechanically remove defective grains, a certain size (150 μm□ (square) or more) is required, and this technique cannot be applied to μ-LED grains smaller than 100 μm□.

[0011] Furthermore, even if it is assumed that the defective die can be picked up by improving the technology of Patent Document 3, the defective portion will still be firmly bonded to the bonded wafer through the BCB, and the defective portion cannot be mechanically picked up while the BCB portion is maintained.

[0012] As described above, Patent Documents 1 to 3 do not disclose a technique for selectively removing defective portions in a μ-LED epitaxial layer portion firmly coupled to a bonded wafer via a BCB or in a μ-LED crystal grain after device processing.

[0013] Prior art literature

[0014] Patent Literature

[0015] Patent Document 1: Japanese Patent Application Publication No. 2021-019162

[0016] Patent Document 2: Japanese Patent Application Publication No. 2018-163900

[0017] Patent Document 3: Japanese Patent No. 5169509 Summary of the invention

[0018] 1. Technical issues to be resolved

[0019] In most cases, when the starting substrate is removed, as the epitaxial layer becomes convex on the side where the starting substrate is removed, the poor bonding portion becomes significant. In particular, the size of the convex poor portion caused by poor curing of BCB becomes a size of about 100 to 300 μm in height and about 500 to 5000 μm in width in diameter, causing adverse effects during photolithography. When photolithography is performed using contact exposure, the wafer and the photomask are tightly fitted in a vacuum state, so the mask will deform according to the total thickness variation of the wafer (the difference between the maximum and minimum thickness values ​​(Total Thickness Variation, TTV)). If there is a convex poor bonding portion, the incident light of the exposure source will be incident at an angle, and the pattern formed will deviate from the mask pattern, or be skewed, or become larger. This will cause the shape of components, electrodes, protective films, etc. to deviate from the design value, resulting in dimensional deviation and positional displacement. When such a component is transferred to a mounting substrate, a deviation from the pattern on the mounting substrate side will occur, so the mounting accuracy decreases and the defective rate increases. It is difficult to detect deviations from the design value using only photoluminescence (PL) property inspection or appearance inspection, and there are cases where abnormalities are not noticed until after assembly and power-on. If a defect is detected after assembly, reassembly work is required, resulting in increased assembly costs.

[0020] Furthermore, when μ-LED dies made from such a wafer are transferred to a transfer substrate, uneven pressure is applied to the convex portion, which can easily cause transfer failure.

[0021] Furthermore, even in the defective portion, the adhesive layer functions as an adhesive material, and the defective portion is not peeled off or separated due to vacuum adsorption or tensile strength of adhesion, and the defective portion can be maintained.

[0022] Furthermore, defective parts are not limited to defective bonding parts, but also include defective device characteristics parts. Such defective device characteristics parts are also difficult to detect using only PL characteristic inspection or appearance inspection, just like defective bonding parts. There are also cases where abnormalities are not noticed until after assembly and power-on.

[0023] The technical problem of the present invention is to disclose a technology that selectively removes only the defective part of the μ-LED epitaxial layer part firmly coupled to the bonded wafer via the BCB or the μ-LED crystal grain after device processing.

[0024] The present invention is completed to solve the above-mentioned technical problems, and its purpose is to provide a method for manufacturing a bonded light-emitting element wafer, which can selectively remove the defective part of the light-emitting element structure serving as a micro-LED coupled to the bonded wafer via an adhesive, thereby manufacturing a bonded light-emitting element wafer.

[0025] (II) Technical solution

[0026] In order to solve the above-mentioned technical problems, the present invention provides a method for manufacturing a bonded light-emitting element wafer, which is a method for manufacturing a bonded light-emitting element wafer with defective parts removed. The manufacturing method is characterized in that it has the following steps: a step of bonding a light-emitting element structure as a micro-LED to a bonded substrate transparent to the LLO transfer laser using an adhesive that absorbs laser lift-off (LLO) transfer laser to obtain a bonded wafer; a step of optically investigating the defective part of the bonded wafer to prepare removal map data; and a step of irradiating the defective part of the bonded wafer with a removal laser based on the removal map data to sublime the part of the light-emitting element structure contained in the defective part, thereby removing the part of the light-emitting element structure contained in the defective part to obtain a bonded light-emitting element wafer.

[0027] If the manufacturing method of the junction type light emitting element wafer of the present invention is such, it is possible to selectively remove the defective parts (such as the defective bonding parts and the defective parts of the element characteristics) in the light emitting element structure contained in the junction type light emitting element wafer by irradiating the laser. In addition, the manufacturing method of the junction type light emitting element wafer of the present invention can simply and selectively remove the defective parts of the light emitting element structure without using a mechanical method. That is, the manufacturing method of the junction type light emitting element wafer according to the present invention can simply manufacture a junction type light emitting element wafer with the defective parts of the light emitting element structure removed.

[0028] Preferably: in the process of preparing the removal map data, a photoluminescence spectrum of the bonded wafer is obtained, and first map data about the defective portion is prepared using the peak wavelength, peak intensity and / or peak half-width as a judgment basis, the bonded wafer is photographed from the bonded substrate side using a CCD camera, and second map data about the defective portion is prepared based on the color tone of the image obtained by the photography, and the surface of the light-emitting element structure of the bonded wafer is irradiated with a topology inspection laser from an inclined direction to obtain topology data, and topology map data about the defective portion is prepared based on the topology data, and the first map data, the second map data and the topology map data are used to prepare removal map data about the defective portion.

[0029] Based on the removal map data created in this manner, all the bonding defective portions and device characteristic defective portions in the light emitting device structure included in the junction type light emitting device wafer can be selectively and reliably removed.

[0030] When the removal map data is prepared before the element separation process, the topological map data is obtained, and it is synthesized with the first map data and the second map data to prepare the removal map data, and the laser removal is performed according to the removal map data, thereby selectively and reliably removing all the poor bonding parts and poor element characteristic parts in the light emitting element structure included in the junction type light emitting element wafer. Furthermore, by performing in this way, the poor photolithography precision parts around the poor parts of the light emitting element structure can be reduced.

[0031] Preferably, after the step of obtaining the junction type light emitting element wafer, there is a step of performing element separation processing.

[0032] Thus, a junction-type light-emitting element having no defective portion can be easily obtained.

[0033] Preferably, after the step of obtaining the bonded wafer and before the step of creating the removal map data, there is a step of performing a device separation process on the light emitting device structure of the bonded wafer.

[0034] By performing such a process on a bonded wafer including a light emitting element structure separated into elements, defective portions of the light emitting element structure can be simply and selectively removed without affecting good portions of the light emitting element structure.

[0035] By using such a method, it is possible to selectively and reliably remove all the bonding failure portions and device characteristic failure portions in the light emitting device structure included in the junction type light emitting device wafer.

[0036] At this time, it is preferred that: in the process of preparing the removal map data, a photoluminescence spectrum of the bonded wafer is obtained, and the peak wavelength, peak intensity and / or peak half-width are used as a judgment basis to prepare first map data about the defective part, the bonded wafer is photographed from the bonded substrate side using a CCD camera, and second map data about the defective part is prepared based on the color tone of the image obtained by the photography, the grain pattern surface of the light-emitting element structure of the bonded wafer is photographed using a camera, and whether it is good or not is judged based on the deviation from the basic pattern, and appearance inspection map data is prepared, and the first map data, the second map data and the appearance inspection map data are used to prepare removal map data for the defective part.

[0037] Based on the removal map data created in this manner, all the bonding failure portions and device characteristic failure portions in the light emitting device structure included in the junction type light emitting device wafer can be selectively and reliably removed after the device separation process.

[0038] Preferably, a laser having a wavelength greater than 360 nm and not greater than 680 nm is used as the removal laser.

[0039] Laser with a wavelength greater than 360nm and less than 680nm is a wavelength at which the EP layer can easily and efficiently absorb light and has an extremely small absorption coefficient for the light emitting element structure outside the EP layer. Therefore, it is possible to sublime only the portion of the light emitting element structure contained in the defective portion, thereby removing only the portion of the light emitting element structure contained in the defective portion.

[0040] Preferably, the removal laser is incident from the light emitting element structure side or the bonded substrate side.

[0041] Thus, only the defective portion can be irradiated with the removal laser with certainty, and only the portion of the light emitting element structure included in the defective portion can be removed by sublimating only the portion of the light emitting element structure included in the defective portion.

[0042] Preferably, the adhesive is selected from the group consisting of benzocyclobutene, silicone resin, epoxy resin, spin-on-glass (SOG), polyimide, and amorphous fluorine-based resin.

[0043] Such an adhesive can firmly bond the light emitting element structure to the bonded substrate and can be easily evaporated using a laser for LLO transfer.

[0044] Preferably, before removing the portion of the light emitting element structure included in the defective portion, a protective material is applied on the light emitting element structure.

[0045] Such a protective material can prevent the good portion of the light emitting element structure that should not be removed from being damaged by a receiving jig or the like when the bonded wafer is irradiated with laser light.

[0046] Preferably, a protective material containing polyvinyl acetate or a protective material containing polyvinyl alcohol is used as the protective material.

[0047] Such a protective material is preferable because it can be easily removed.

[0048] (III) Beneficial effects

[0049] As described above, the method for manufacturing a junction type light emitting element wafer of the present invention can selectively remove defective parts of the light emitting element structure contained in the junction type light emitting element wafer. That is, according to the method for manufacturing a junction type light emitting element wafer of the present invention, a junction type light emitting element wafer free of defective light emitting element structures can be manufactured. BRIEF DESCRIPTION OF THE DRAWINGS

[0050] Figure 1 It is a schematic cross-sectional view showing a part of the process of obtaining a bonded wafer in the first embodiment of the method for manufacturing a bonded light-emitting element wafer of the present invention.

[0051] Figure 2 It is a schematic cross-sectional view showing another part of the step of obtaining a bonded wafer in the first embodiment of the method for manufacturing a bonded light-emitting element wafer of the present invention.

[0052] Figure 3 It is a schematic cross-sectional view of a bonded wafer obtained in the step of obtaining a bonded wafer in the first embodiment of the method for manufacturing a bonded light-emitting element wafer of the present invention.

[0053] Figure 4 It is a schematic cross-sectional view showing a part of the process of obtaining a junction type light emitting element wafer in the first embodiment of the method for manufacturing a junction type light emitting element wafer of the present invention.

[0054] Figure 5 It is a schematic cross-sectional view showing irradiation with a laser beam for removal in the first embodiment of the method for manufacturing a junction-type light-emitting element wafer of the present invention.

[0055] Figure 6 It is a schematic cross-sectional view of a junction type light emitting element wafer obtained after removing a portion included in a defective portion in a light emitting element structure in the first embodiment of the method for manufacturing a junction type light emitting element wafer of the present invention.

[0056] Figure 7 It is a schematic cross-sectional view of a junction type light emitting element wafer after the element separation process in the first embodiment of the method for manufacturing a junction type light emitting element wafer of the present invention.

[0057] Figure 8 It is a schematic cross-sectional view showing a part of the protective film forming step in the first embodiment of the method for manufacturing a junction-type light-emitting element wafer of the present invention.

[0058] Fig. 9 It is a schematic cross-sectional view of a junction type light-emitting element wafer obtained in the first embodiment of the method for manufacturing a junction type light-emitting element wafer of the present invention.

[0059] Fig. 10A This is a part of the removal map data used in the first embodiment of the method for manufacturing a junction-type light-emitting element wafer of the present invention.

[0060] Fig. 10B It is a schematic plan view showing irradiation with a laser beam for removal in the first embodiment of the method for manufacturing a junction-type light-emitting element wafer of the present invention.

[0061] Fig. 10C It is a schematic plan view of the light emitting element structure after the portion included in the defective portion in the light emitting element structure is removed in the first embodiment of the method for manufacturing the junction type light emitting element wafer of the present invention. DETAILED DESCRIPTION

[0062] As described above, a method for manufacturing a bonded light emitting device wafer is sought to be developed, which can selectively remove a defective portion of a light emitting device structure as a micro LED coupled to a bonded wafer via an adhesive to manufacture a bonded light emitting device wafer.

[0063] The inventors of the present application have conducted intensive studies on the above-mentioned problems and have found that defective portions in a light emitting element structure included in a junction-type light emitting element wafer can be selectively removed by irradiating with laser light, thereby completing the present invention.

[0064] That is, the present invention is a method for manufacturing a bonded light-emitting element wafer, which is a method for manufacturing a bonded light-emitting element wafer with defective parts removed. The manufacturing method is characterized in that it has the following steps: a step of bonding a light-emitting element structure as a micro-LED to a bonded substrate transparent to the LLO transfer laser using an adhesive that absorbs the LLO transfer laser to obtain a bonded wafer; a step of optically investigating the defective part of the bonded wafer to prepare removal map data; and a step of irradiating the defective part of the bonded wafer with a removal laser based on the removal map data to sublime the part of the light-emitting element structure contained in the defective part, thereby removing the part of the light-emitting element structure contained in the defective part to obtain a bonded light-emitting element wafer.

[0065] Hereinafter, the present invention will be described in detail with reference to the drawings, but the present invention is not limited thereto.

[0066] [Method for manufacturing a junction-type light-emitting device wafer]

[0067] The manufacturing method of the bonded light-emitting element wafer of the present invention is a method for manufacturing a bonded light-emitting element wafer with defective parts removed, which has the following steps: a step of bonding a light-emitting element structure as a micro-LED to a bonded substrate transparent to the LLO transfer laser using an adhesive that absorbs the LLO transfer laser to obtain a bonded wafer; a step of optically investigating the defective parts of the bonded wafer to prepare removal map data; and a step of irradiating the defective parts of the bonded wafer with a removal laser based on the removal map data to sublime the part of the light-emitting element structure contained in the defective part, thereby removing the part of the light-emitting element structure contained in the defective part to obtain a bonded light-emitting element wafer.

[0068] Hereinafter, a method for manufacturing such a junction type light emitting element wafer will be described by giving a more detailed specific example.

[0069] (First embodiment)

[0070] <Steps for obtaining bonded wafer>

[0071] First, the process of obtaining a bonded wafer in the embodiment will be described.

[0072] First, in Figure 1After a first conductivity type GaAs buffer layer (not shown) is stacked on the first conductivity type GaAs substrate (starting substrate) 1, a 0.1 μm thick first conductivity type GaxIn 1－x P (0.4 ≤ x ≤ 0.6) first etching stop layer and 0.1 μm thick first conductivity type GaAs second etching stop layer, forming etching stop layer 2. Next, EPW (epitaxial wafer) 100 having light emitting element structure 3 as epitaxial functional layer is prepared, as shown in FIG. Figure 1 As shown, the EPW100 is a 1.0 μm thick first conductivity type (Al y Ga 1－y ) x In 1－x P (0.4≤x≤0.6, 0.6≤y≤1.0) first cladding layer 31, 0.6 μm thick undoped (Al y Ga 1－y ) x In 1－x P (0.4≤x≤0.6, 0≤y≤0.5) active layer 32, 1.0 μm thick second conductivity type (Al y Ga 1－y ) x In 1－x P (0.4≤x≤0.6, 0.6≤y≤1.0) second cladding layer 33, 0.1 μm thick second conductivity type Ga x In 1－x P (0.5≤x≤1.0) intermediate layer (not shown), and a second conductivity type GaP window layer 34. Here, the first cladding layer 31 to the second cladding layer 33 are referred to as a double heterogeneous (DH) structure. In addition, the light emitting element structure 3 is processed into an element (crystal) as a micro LED through processing in a subsequent stage.

[0073] The film thicknesses described above are merely examples, and the film thickness is only a parameter that changes according to the operating specifications of the device, and is of course not limited to the film thickness described here. In addition, each layer is not a single composition layer, and of course, it is conceptually possible to have multiple composition layers within the composition range described above. In addition, the level of carrier concentration is not uniform in each layer, and of course, it is conceptually possible to have multiple levels in each layer.

[0074] The active layer 32 may be composed of a single composition, and even a structure in which barrier layers and active layers are alternately stacked in multiple layers can have similar functions, and both can be selected.

[0075] Next, benzocyclobutene (BCB) 4 is spin-coated on EPW100 as an adhesive (thermosetting bonding member), and the light-emitting element structure 3 is overlapped with the sapphire wafer as the bonding substrate 5 through the adhesive 4 in a facing manner, and then thermally pressed to produce a Figure 2 The EPW bonding substrate 200 shown is obtained by bonding the light emitting element structure 3 of the EPW 100 and the sapphire wafer 5 via the BCB 4 .

[0076] In this embodiment, sapphire is used as the bonding substrate 5 , but the bonding substrate 5 is not limited to sapphire, and any material can be selected as long as the transmittance and flatness to the LLO laser described later are ensured. In addition to sapphire, quartz can also be selected.

[0077] In this embodiment, the BCB 4 is applied in a layered state, but the adhesive 4 is not limited to a layered state. Of course, the same result can be obtained even if photosensitive BCB is used and patterned into isolated islands, lines, or other shapes and then bonded.

[0078] Next, the GaAs starting substrate 1 is removed by wet etching to expose the first etching stop layer, and then the etchant is switched to remove the second etching stop layer. Thus, the etching stop layer 2 is removed to expose the first cladding layer 31, and the following is produced: Figure 3 As shown, a bonded wafer (EP bonded substrate) 10 is formed by bonding a light emitting element structure 3 including a DH layer and a window layer 34 to a bonded substrate 5 via an adhesive 4 .

[0079] When BCB is applied, for example, spin coating is used.

[0080] The thickness of the adhesive 4 and the designed film thickness of the BCB4 layer are preferably 0.1 to 2 μm. For example, it can be set to 0.6 μm. This allows for strong and sufficient bonding. When it is set to 0.1 μm or more, it is easy to control the thickness and improve the bonding yield, so it is preferred. When it is set to 2 μm or less, it is not easy to produce a crown, and during the laser lift-off (LLO) process when assembling the micro-LED, the process time can also be shortened when stripping and removing the BCB, so it is preferred.

[0081] <Process of creating map data for removal>

[0082] Next, a process is performed in which the defective portion of the bonded wafer 10 is optically inspected and map data for removal is created.

[0083] In this embodiment, first map data on the defective portion, topological map data on the defective portion, and second map data on the defective portion are created, and map data for removing the defective portion is created using these map data.

[0084] Next, acquisition of map data will be described.

[0085] [First map data]

[0086] First, the entire area of ​​the bonded wafer 10 is irradiated with a laser having a wavelength of 325 to 532 nm and a spot diameter of 100 μm from the EP layer side at a pitch of 25 μm, and a photoluminescence (PL) spectrum is collected to create the first map data. The laser wavelength can be selected from any of the aforementioned wavelengths, and in this embodiment, a solid-state laser having an oscillation wavelength of 532 nm is used.

[0087] In the present embodiment, the case where the laser irradiation is performed from the EP layer side is exemplified, but it is of course not limited to the form of irradiation from the EP layer, and the same data can be obtained even if the laser irradiation is performed through the sapphire substrate.

[0088] In this embodiment, the main wavelength of the electroluminescence (EL) of EPW100 is designed to be 632nm, the position within the range of 632±5nm is set as the qualified point, and the wavelength range other than this is set as the unqualified point, and the first map data about the defective part, especially the defective part of the element characteristics, is prepared.

[0089] In this embodiment, wavelength is illustrated as an investigation item for defective parts, but of course the judgment criterion is not limited to wavelength. In most cases, stress is applied to the convex defective part due to deformation, and cracks may occur. Or the half-width of the peak value increases due to greater stress, or the PL intensity decreases significantly due to cracks, so the PL intensity or half-width is used as the judgment criterion, or the first map data is prepared in addition to this. Of course, which of the intensity, wavelength, and half-width is set as the priority item, or whether to judge with OR conditions instead of AND, is a design matter, and is only a condition that can be determined according to the bonding state.

[0090] [Topological map data]

[0091] From the tilt direction Figure 3 The surface of the light emitting element structure 3 side of the bonded wafer 10 is irradiated with a laser having an oscillation wavelength of 532 nm. Using a system in which a light receiver is placed at the same angle as the incident angle of the laser in the direction of reflection, the entire surface of the wafer is irradiated with laser light at a pitch of 25 μm, and the deviation of the reflection angle is measured. In the convex part of the light emitting element structure 3, the reflection angle is offset upward, and in the concave part, the reflection angle is offset downward, so topological data is collected from the deviation of the reflection angle. The height tolerance is set as a threshold, and topological map data is created in which points falling within the tolerance are set as qualified points and points other than this are set as unqualified points.

[0092] [Second map data]

[0093] The CCD camera is used to monitor the bonding substrate (sapphire substrate) 5 from the side. Figure 3 The bonded wafer 10 is photographed, and qualified points and unqualified points are determined based on the color tone. Unqualified points with poor bonding tend to have a slightly whiter (lighter) color tone than points with uniform bonding. Whether it is qualified is determined based on the contrast difference, and second map data about defective parts, especially poorly bonded parts, is prepared to determine whether it is qualified with a 25μm pitch grid.

[0094] The defective parts of the first map data, topological map data and second map data obtained in the above manner are overlapped to generate map data for removal. Although the positions of the three map grids are different, the area defined as a defective part in any map is defined as a defective part to generate map data for removal.

[0095] <Step of irradiating a removal laser onto a defective portion of a bonded wafer based on removal map data, removing a portion of a light emitting element structure included in the defective portion, and obtaining a bonded light emitting element wafer>

[0096] In this process, a junction type light emitting element wafer is obtained according to the procedure described below.

[0097] First, if Figure 4 As shown, a protective material 6 is applied on the surface of the bonded wafer 10 from which the substrate is initially removed.

[0098] In this embodiment, as the protective material 6, Hogomax (trademark: a material containing propylene glycol monomethyl ether / polyvinyl alcohol according to SDS) manufactured by DISCO Corporation can be cited. The material of the protective material 6 is not limited to Hogomax, and any material can be selected as long as it has the function of a protective material and is a material that is easily removed. In addition to Hogomax, for example, polyvinyl acetate and polyvinyl alcohol are also suitable.

[0099] The protective material 6 is applied by spin coating.

[0100] The bonded wafer (EP bonded substrate) 10 coated with the protective material 6 is introduced into the laser processing unit, and the surface of the EP layer is irradiated with laser light according to the removal map data to remove defective portions by ablation as follows.

[0101] The bonding wafer 10 coated with the protective material 6 is introduced into the laser processing unit. When introduced, for example, the bonding wafer 10 is held by a bonding wafer receiving fixture and introduced into the laser processing unit. The bonding wafer receiving fixture is provided with an opening area in the center, and the edge of the opening area serves as a wafer receiving groove. When held, the light emitting element structure is located in the opening area.

[0102] In addition, when introducing, the bonding wafer 10 is introduced in a manner that the coated surface of the protective material 6 faces upward. In the present embodiment, the case where the coated surface of the protective material 6 faces upward is exemplified, but it is not limited to the state of facing upward, and it can also be set in a manner that the coated surface faces the lower surface or the side surface. Among them, when facing the upper surface, the laser ablation processing device generally has a structure with a laser irradiation port on the upper side (ceiling direction) of the substrate introduction part (wafer setting (wafer set) part), so the configuration of the removal laser (ablation laser) and the substrate introduction part in the device is the same as that of the previous device, which is easy to design and can use the existing device, which is advantageous in this regard.

[0103] Next, from the light emitting element structure 3 side of the bonded wafer 10 , a region defined as a defective portion is irradiated with a removal laser based on the removal map data obtained previously.

[0104] Fig. 10A 2 shows a part of an example of the removal map data. Fig. 10A The removal map data shown is drawn with the defective portion 10A of the bonded wafer 10 as the center. The defective portion 10A includes a defective portion of the light emitting device structure 3 .

[0105] In this embodiment, if Fig. 10B As shown, the defective portion 10A is irradiated with a removal laser multiple times. Thus, multiple laser irradiation areas (each time) 81 are generated, and a laser irradiation area 82 consisting almost entirely of the defective portion 10A is generated. In another embodiment, all defective portions 10A of the bonded wafer 10 (including the defective portion of the light emitting element structure 3) can be irradiated with a removal laser.

[0106] Figure 5 The following state is shown: the removal laser 83 emitted by the laser head 8 is incident from the light emitting element structure 3 side, and the portion of the light emitting element structure 3 included in the defective portion 10A of the bonded wafer 10 absorbs the removal laser 83, and the portion of the light emitting element structure 3 included in the defective portion 10A sublimates into gas and disappears, and the convex defective portion of the light emitting element structure 3 disappears. The defective portion disappears almost along the laser irradiation direction, so that the influence on the adjacent good portion of the light emitting element structure 3 can be suppressed to a minimum.

[0107] That is, by irradiating the defective portion 10A of the bonded wafer 10 with the removal laser, the portion (defective portion) included in the defective portion 10A of the bonded wafer 10 in the light emitting element structure 3 can be removed.

[0108] In this embodiment, the case of irradiating the EP layer surface with laser light is illustrated, but it is of course not limited to the case of irradiating the EP layer surface, and the same effect can be obtained even if irradiating from the sapphire substrate side which does not absorb the laser light. In addition, if the wavelength of the removal laser light is used, it will hardly be absorbed by the adhesive 4.

[0109] As the removal laser 83, a laser (visible light) having a wavelength greater than 360 nm and less than 680 nm can be used. For example, Argonne having a wavelength of 514.5 nm can be used. ＋ Excimer laser.

[0110] Laser with a wavelength greater than 360nm and less than 680nm is a wavelength at which the EP layer can easily and efficiently absorb light, and is a wavelength with an extremely small absorption coefficient for the light-emitting element structure except for the EP layer. Therefore, it is possible to sublime only the portion of the light-emitting element structure contained in the defective portion, thereby removing only the portion of the light-emitting element structure contained in the defective portion.

[0111] In addition, the difference between the removal laser 83 and the PL map or topology map measurement laser is that there is a difference in laser output. When the removal laser 83 as in the present embodiment is a continuous wave (CW) laser, the density after focusing is generally 100 mW / cm 2 ~100TW / cm 2 At 10kW / cm 2 Under the conditions of energy density above 1 kW / cm, the temperature of the epitaxial layer will rise excessively. Therefore, in the case of PL or topography measurement, the energy density of 1 kW / cm 2 The following low-power laser was used to perform PL or topological measurement.

[0112] Previously stated Fig. 10B This is a conceptual diagram of using the above-mentioned removal laser to remove the poorly bonded part. Fig. 10B As shown in FIG. 1 , the removal laser is irradiated along the outline of the removal area (the portion of the light emitting element structure 3 included in the defective portion 10A of the bonded wafer 10). Fig. 10C As shown, a region 35 with a minimum area from which the defective portion is removed can be obtained. In other words, only a slight protrusion which can be said to be almost only the defective portion can be completely removed.

[0113] After laser irradiation, Fig. 10CAs shown in the figure, the defective bonding area can be removed with the minimum area. By irradiating with laser, the part slightly outside the irradiated area is etched and removed. The boundary of the etched and removed part is determined by the heat transfer of the epitaxial layer, so it is several μm wider than the irradiated area and falls below 10 μm. Since the defective part is removed from the EP layer, it becomes a concave part relative to the surface of the EP layer.

[0114] Next, the bonded wafer 10 is taken out from the laser processing unit, and the surface coated with the protective material 6 is set as the lower surface and cleaned with pure water to remove the protective material 6. Figure 6 The light emitting element structure 3 including the region 35 from which the defective portion is removed is shown as a bonded light emitting element wafer 20 bonded to the bonded substrate 5 via the adhesive 4. The wafer before removing the protective material 6 can also be referred to as a bonded light emitting element wafer. The debris generated during the stripping process exists on the protective material and is removed from the surface of the EP layer together with the protective material during the cleaning process.

[0115] The light emitting device structure 3 is a structure of a micro LED, and can be subjected to device separation processing as described below, for example. An example of the processing will be described below.

[0116] A mask pattern is formed on the light emitting element structure 3 by photolithography, and the light emitting element structure 3 is subjected to element separation processing by inductively coupled plasma (ICP). Figure 7 As shown, through this processing, the light emitting element structure 3 becomes an element separated by the separation groove 21 (the light emitting element structure after the element separation processing, that is, the grain) 9. The gas used for ICP is, for example, chlorine gas and argon gas. The ICP processing is performed, for example, twice: a process of exposing the bonded substrate 5 and a process of exposing a portion of the main surface of the second cladding layer 33.

[0117] In this embodiment, the case where a part of the main surface of the second cladding layer 33 is exposed is exemplified, but of course the process is not limited to the case where a part of the main surface of the second cladding layer 33 is exposed, and of course the processing purpose can be achieved as long as the active layer 32 is separated to a minimum. Of course, even if a part of the main surface of the GaP window layer 34 is exposed instead of the second cladding layer 33, the same effect can be obtained.

[0118] After the components are separated and processed, Figure 8 As shown, a protective film 91 is formed as the end surface treatment. In this embodiment, SiO2 is used as the protective film 91. The protective film 91 is not limited to SiO2, and any material can be selected as long as it can protect the end surface and has insulating properties. SiN xOr titanium oxide, magnesium oxide, etc. The protective film 91 is provided with an opening 92 that exposes a part of the main surface of the first cladding layer 31 , and an opening 93 that exposes a part of the main surface of the second cladding layer 33 .

[0119] After the protective film 91 is formed, Fig. 9 As shown, an electrode 94 and an electrode 95 are formed to contact the first conductive layer or the second conductive layer, respectively, and a heat treatment is applied to form an ohmic contact. In this embodiment, the first conductive type is set to N type, the second conductive type is set to P type, a metal containing Au and Si is used as the N type electrode 94 that contacts the N type layer, i.e., the first cladding layer 31, through the opening 92, and a metal containing Au and Be is used as the P type electrode 95 that contacts the P type layer, i.e., the second cladding layer 33, through the opening 93.

[0120] In this embodiment, Au and Si metals are used as N-type electrodes, but of course, this material is not limited to this material. Even if a metal containing Au and Ge is used, the same result can be obtained. In addition, Au and Be metals are used as P-type electrodes, but of course, this material is not limited to this material. Even if a metal containing Au and Zn is used, the same result can be obtained.

[0121] In addition, in the present embodiment, BCB is used as the adhesive 4, but the material of the adhesive 4 used in the present invention is not limited to BCB. For example, when a substrate 5 to be bonded is used that has a wavelength of 170 nm to 360 nm and is transparent to the LLO transfer laser, as long as the adhesive 4 has a light absorption margin in the wavelength region of 170 nm to 360 nm, it can be easily sublimated by the LLO transfer laser that can penetrate the substrate 5 to be bonded and has a wavelength of 170 nm to 360 nm. As examples of the adhesive 4, in addition to BCB, silicone resins, epoxy resins, SOG, polyimides, and amorphous fluorine-based resins (such as Cytop (registered trademark)) and the like can be listed; by using these adhesives, the light-emitting element structure 3 can be firmly bonded to the substrate 5 to be bonded.

[0122] (Second embodiment)

[0123] In the second embodiment, the process of obtaining the bonded wafer 10 is the same as that of the first embodiment, but is different from the first embodiment in that the light emitting element structure 3 is subjected to element separation processing and electrode formation processing before the process of obtaining the removal map data.

[0124] Except for the fact that the defective portion of the light emitting element structure 3 is not removed, it can be seen that Figure 7 to Figure 9, the element separation process and the electrode formation process are performed in the same order as described. In the second embodiment, the element separation (crystal grain) process or the electrode attachment is performed in a state where the convex defective part exists in the light emitting element structure 3, so that the defective part may form an element with a defective shape or size. Then, the removal laser is irradiated according to the removal map data to remove such a defective part.

[0125] However, unlike the first embodiment, the laser is irradiated only from the sapphire substrate side to create PL map data because the device pattern (electrode) is located thereon and it is difficult to irradiate from the opposite side.

[0126] Furthermore, in the second embodiment, unlike the first embodiment, since it is after the grain processing and is not suitable for obtaining topological map data, a camera is used to photograph the surface of the grain pattern, and whether it is good or not is judged based on the deviation from the basic pattern (foreign matter, dimensional abnormality), and appearance inspection map data is produced to replace the topological map data.

[0127] Then, similarly to the first embodiment, the first map data, the second map data, and the appearance inspection map data are used to superimpose the defective portion and create removal map data.

[0128] When removing the defective part, a protective material is applied to the surface of the element obtained by separating the light-emitting element structure of the bonded wafer in the same manner as in the first embodiment. Then, in the same order as in the first embodiment, a laser is irradiated from the sapphire substrate side to remove the defective part. Then, the protective material is washed and removed in the same manner as in the first embodiment. Thus, a bonded light-emitting element wafer can be obtained in which a light-emitting element structure (element) with the defective part removed is bonded to a bonded substrate via an adhesive.

[0129] According to the above-described method for manufacturing a bonded light-emitting element wafer of the present invention, it is possible to simply and selectively remove the defective portion of the light-emitting element structure without using a mechanical method and without affecting the good portion of the light-emitting element structure (e.g., other grain regions). In addition, according to the present invention, all portions of the light-emitting element structure that are included in the defective portion of the bonded wafer can be removed.

[0130] In particular, by removing the poorly bonded portion (especially the convex poorly bonded portion) before the device process such as the element separation process is put into use in the manner of the first embodiment, the poorly bonded portion of the photolithography accuracy around the poorly bonded portion can be reduced.

[0131] Furthermore, in the second embodiment, the defective portion of the light emitting element structure can be removed simply and selectively without using a mechanical method and without affecting the good portion of the light emitting element structure (eg, other crystal grain regions).

[0132] In addition, in the second embodiment, the process of judging whether the device structure is qualified and removing the defective part after the device structure is made is illustrated, but it is of course not limited to removing the defective part only after the device structure is completely made. That is, even if it is implemented after the element is separated or after the protective film is formed, the same effect can be obtained.

[0133] As described above, the method for manufacturing a bonded light-emitting element wafer of the present invention can selectively remove defective portions (e.g., defective bonding portions and defective device characteristic portions) in a light-emitting element structure contained in the bonded light-emitting element wafer, thereby being able to manufacture a bonded light-emitting element wafer including a light-emitting element structure with defective portions removed.

[0134] Example

[0135] Hereinafter, the present invention will be specifically described using Examples and Comparative Examples, but the present invention is not limited thereto.

[0136] (First embodiment)

[0137] In the first example, a junction type light emitting element wafer is manufactured in the same procedure as that of the first embodiment described above. Specifically, the process is as follows.

[0138] First, in the same order as previously described, we obtain Figure 1 The EPW 100 shown has an EPW structure.

[0139] Next, BCB 4 was applied on the light-emitting element structure 3 of EPW 100 by spin coating so as to have a designed film thickness of 0.6 μm.

[0140] This is overlapped with a sapphire wafer as the wafer to be bonded 5 so as to face each other, and then thermocompression-bonded to produce an EPW bonding substrate 200 ( Figure 2 ).

[0141] Next, the GaAs starting substrate 1 is removed by wet etching to expose the first etching stop layer, and the etchant is switched to remove the second etching stop layer. Thus, the etching stop layer 2 is removed to expose the first cladding layer 31, and a bonded wafer (EP bonded substrate) 10 ( Figure 3 ).

[0142] Next, the removal map data is created in the following procedure.

[0143] The entire area of ​​the bonded wafer 10 is irradiated with a laser having a wavelength of 532 nm and a spot diameter of 100 μm at a pitch of 25 μm, and the PL spectrum is collected to create map data. In this embodiment, the design wavelength of EPW is designed to be 632 nm, and the positions within the range of 632±5 nm are set as qualified points, and the wavelength regions other than this are set as unqualified points, and the first map data is created.

[0144] In addition, the surface of the light emitting element structure 3 side of the bonded wafer 10 is irradiated with a laser having an oscillation wavelength of 532 nm from an oblique direction, and the entire surface of the wafer is irradiated with laser light at a 25 μm pitch using a system in which a light receiver is placed at a position in the reflection direction at the same angle as the laser incident angle, and topological data is collected. The height tolerance is set as a threshold, and topological map data is prepared, wherein points falling within the tolerance are set as qualified points, and points outside the tolerance are set as unqualified points.

[0145] Furthermore, the bonded wafer 10 is photographed from the sapphire substrate 5 side using a CCD camera, and second map data is prepared in which the pass / fail judgment is made based on the contrast difference at a 25 μm pitch grid.

[0146] The defective parts of the first map data, the topological map data, and the second map data obtained in the above manner are superimposed to create removal map data.

[0147] Next, Hogomax (trademark) manufactured by DISCOCORPORATION is spin-coated on the surface of the light emitting element structure 3 of the bonded wafer 10 where the substrate is removed. Figure 4 As shown, a protective material 6 is applied.

[0148] The bonding wafer 10 coated with the protective material 6 is held by a bonding wafer receiving jig and introduced into the laser processing unit with the coated surface of the protective material 6 facing upward. At this time, the wafer is held with the end of the sapphire substrate 5 covering the wafer receiving groove of the jig.

[0149] In the laser processing department, such as Figure 5 and Fig. 10B As shown, from the light emitting element structure 3 side, according to the removal map data, only the area defined as the defective portion 10A (and the slightly protruding portion which can be said to be almost only the defective portion) is irradiated with Ar with a wavelength of 514.5 nm. ＋ Excimer laser to remove the defective parts.

[0150] Next, the wafer is taken out from the laser processing unit, the surface coated with the protective material 6 is set as the upper surface, and is cleaned with pure water. Figure 6 As shown, the protective material 6 is removed.

[0151] Next, a mask pattern is formed on the light emitting element structure 3 by photolithography, and an element separation process is performed by ICP using chlorine gas and argon gas. The ICP process is performed twice: a process of exposing the bonded substrate 5 and a process of exposing a portion of the main surface of the second cladding layer 33. Figure 7 As shown, the light emitting element structure 3 is made into elements (light emitting element structure after element separation process) 9 separated by the separation grooves 21 by the element separation process.

[0152] After the components are separated and processed, Figure 8 As shown, a SiO 2 protective film 91 is formed as the end surface treatment, and an opening 92 exposing a part of the main surface of the first cladding layer 31 and an opening 93 exposing a part of the main surface of the second cladding layer 33 are provided in the protective film 91 .

[0153] After the protective film 91 is formed, Fig. 9 As shown, an electrode 94 and an electrode 95 are formed to contact the first conductive type layer or the second conductive type layer respectively, and a heat treatment is applied to form an ohmic contact. In this embodiment, the first conductive type is set to N type, the second conductive type is set to P type, a metal containing Au and Si is used as the N type electrode 94 contacting the N type layer, i.e., the first cladding layer 31, and a metal containing Au and Be is used as the P type electrode 95 contacting the P type layer, i.e., the second cladding layer 33.

[0154] Through the above process, a Fig. 9 The structure shown is a junction type light emitting element wafer 20 of the first embodiment.

[0155] (Second embodiment)

[0156] In the second example, a junction type light emitting element wafer is manufactured in the same procedure as that of the second embodiment described above.

[0157] That is, in the second embodiment, the junction type light emitting element wafer of the second embodiment is manufactured in the same manner as the first embodiment, except that the element separation process and the electrode formation process are performed on the light emitting element structure 3 before the step of obtaining the removal map data, and the appearance inspection map data is obtained instead of the topology map data.

[0158] (Comparative Example)

[0159] In the comparative example, a junction type light emitting element wafer of the comparative example was manufactured in the same manner as in the first embodiment except that the defective portion of the light emitting element structure was not removed.

[0160] That is, in the comparative example, the process of obtaining the bonded wafer 10 is performed in the same manner as in the first embodiment, and the element separation process and the electrode formation process are performed in the same manner as in the second embodiment. However, in the comparative example, unlike in the second embodiment, the map data is not prepared and removed, so the defective part of the light emitting element structure remains as it is.

[0161] (evaluate)

[0162] Table 1 below shows a table comparing the removal rate of the convex defective portion and the yield of the number of grains that do not cause problems when finally assembled.

[0163] [Table 1]

[0164]

[0165] In the first embodiment, when the convex defective portion is removed, the defective portion is connected to the good portion due to the wafer state, and when the light emitting element structure of the defective portion is sublimated, heat is transferred to the adjacent good portion to cause a dissolved portion, so the removal rate slightly exceeds 100%.

[0166] In the case of the second embodiment, since the defective portion is removed in the grain state, when the light-emitting element structure is sublimated, the heat transfer is stopped due to the separation grooves between the grains, and dissolution and propagation to the adjacent good portion will not occur. The identified defective area (=grain area) is roughly consistent with the removal area, so the removal rate is 100%.

[0167] In the case of the comparative example, since no removal was performed, the removal rate was 0%.

[0168] In addition, the above Table 1 shows the yield of mounted die when 10 bonding type light emitting element wafers obtained by the methods of the first and second examples and the comparative example are put into the mounting (transfer) step.

[0169] The values ​​in brackets are the deviations of the 10 pieces, and the values ​​outside brackets are the average values.

[0170] Ten bonded wafers were put into the assembly process, and after the defective parts were removed in the first embodiment or the second embodiment, when they were put into the assembly (relocation) process, the yield of the number of grains without problems during assembly exceeded 90%.

[0171] In contrast, in the comparative example, defects are easily generated when picking up grains due to the expansion of the convex portion, and when removing the defective portion, the grains around the defective portion are damaged due to removal, etc., resulting in a decrease in the number of grains in the assembly yield by about 20%, and the yield becomes low.

[0172] As shown above, the first embodiment and the second embodiment of removing the defective part before transferring the die to the transfer substrate and then putting the die into the assembly process can improve the final assembly yield.

[0173] In addition, this specification includes the following aspects.

[0174] [1] A method for manufacturing a bonded light-emitting element wafer, which is a method for manufacturing a bonded light-emitting element wafer with defective parts removed, the manufacturing method being characterized in that it comprises the following steps: a step of bonding a light-emitting element structure as a micro-LED to a bonded substrate transparent to the LLO transfer laser using an adhesive that absorbs the LLO transfer laser to obtain a bonded wafer; a step of optically investigating the defective parts of the bonded wafer to prepare removal map data; and a step of irradiating the defective parts of the bonded wafer with a removal laser based on the removal map data to sublime a part of the light-emitting element structure contained in the defective part, thereby removing the part of the light-emitting element structure contained in the defective part to obtain a bonded light-emitting element wafer.

[0175] [2] A method for manufacturing a bonded light-emitting element wafer as described in [1], wherein, in the step of preparing the removal map data, a photoluminescence spectrum of the bonded wafer is obtained, and first map data of the defective portion is prepared using the peak wavelength, peak intensity and / or peak half-width as a judgment basis, the bonded wafer is photographed from the bonded substrate side using a CCD camera, and second map data of the defective portion is prepared based on the color tone of the image obtained by the photography, and topology data is obtained by irradiating the surface of the light-emitting element structure of the bonded wafer with a topology inspection laser from an oblique direction, and topology map data of the defective portion is prepared based on the topology data, and the first map data, the second map data and the topology map data are used to prepare the removal map data of the defective portion.

[0176] [3] The method for manufacturing a junction type light emitting element wafer according to [1] or [2], further comprising a step of performing element separation processing after the step of obtaining the junction type light emitting element wafer.

[0177] [4] The method for manufacturing a bonded light-emitting element wafer as described in [1], wherein after the step of obtaining the bonded wafer and before the step of preparing the removal map data, there is a step of performing element separation processing on the light-emitting element structure of the bonded wafer.

[0178] [5] A method for manufacturing a bonded light-emitting element wafer as described in [4], wherein, in the process of preparing the removal map data, a photoluminescence spectrum of the bonded wafer is obtained, and first map data of the defective portion is prepared using the peak wavelength, peak intensity and / or peak half-width as a judgment basis, the bonded wafer is photographed from the bonded substrate side using a CCD camera, and second map data of the defective portion is prepared based on the color tone of the image obtained by the photography, the surface of the grain pattern of the light-emitting element structure of the bonded wafer is photographed using a camera, and whether it is good or not is determined based on the deviation from the basic pattern, and appearance inspection map data is prepared, and the first map data, the second map data and the appearance inspection map data are used to prepare the removal map data of the defective portion.

[0179] [6] The method for manufacturing a junction-type light-emitting element wafer according to any one of [1] to [5], wherein a laser having a wavelength greater than 360 nm and less than or equal to 680 nm is used as the removal laser.

[0180] [7] The method for manufacturing a junction-type light-emitting element wafer according to any one of [1] to [6], wherein the removal laser is incident from the light-emitting element structure side or the substrate to be joined side.

[0181] [8] The method for manufacturing a junction-type light-emitting element wafer as described in any one of [1] to [7], wherein the adhesive is an adhesive selected from the group consisting of benzocyclobutene, silicone resin, epoxy resin, SOG, polyimide, and amorphous fluorine-based resin.

[0182] [9] The method for manufacturing a junction-type light-emitting element wafer according to any one of [1] to [8], wherein a protective material is applied to the light-emitting element structure before removing the portion of the light-emitting element structure included in the defective portion.

[0183]

[10] The method for manufacturing a junction-type light-emitting element wafer according to [9], wherein a protective material containing polyvinyl acetate or a protective material containing polyvinyl alcohol is used as the protective material.

[0184] The present invention is not limited to the above-mentioned embodiments. The above-mentioned embodiments are merely examples, and any technical solution having substantially the same structure and exerting the same effect as the technical concept described in the claims of the present invention is included in the technical scope of the present invention.

Claims

1. A method for manufacturing a junction type light emitting element wafer, which is a method for manufacturing a junction type light emitting element wafer with a defective portion removed, wherein the manufacturing method comprises the following steps: A step of bonding a light-emitting element structure as a micro LED to a bonded substrate transparent to the LLO transfer laser by using an adhesive that absorbs the LLO transfer laser to obtain a bonded wafer; A step of optically inspecting the defective portion of the bonded wafer and preparing map data for removal; and A process of irradiating a defective portion of the bonded wafer with a removal laser according to the removal map data to sublime a portion of the light emitting element structure included in the defective portion, thereby removing the portion of the light emitting element structure included in the defective portion to obtain a bonded light emitting element wafer.

2. The method for manufacturing a junction type light emitting element wafer according to claim 1, wherein: In the step of preparing the removal map data, Obtaining a photoluminescence spectrum of the bonded wafer, using the peak wavelength, peak intensity and / or peak half-width as a judgment criterion, and creating first map data of the defective portion, The bonded wafer is photographed from the bonded substrate side using a CCD camera, and second map data on the defective portion is prepared based on the color tone of the image obtained by the photography, irradiating the surface of the light emitting element structure of the bonded wafer with a topology inspection laser from an oblique direction to obtain topology data, and creating topology map data on the defective portion based on the topology data, Map data for removing the defective portion is created using the first map data, the second map data, and the topological map data.

3. The method for manufacturing a junction type light emitting element wafer according to claim 1, characterized in that: After the step of obtaining the junction type light emitting element wafer, there is a step of performing element separation processing.

4. The method for manufacturing a junction type light emitting element wafer according to claim 1, characterized in that: After the step of obtaining the bonded wafer and before the step of preparing the removal map data, there is a step of performing a device separation process on the light emitting device structure of the bonded wafer.

5. The method for manufacturing a junction type light emitting element wafer according to claim 4, characterized in that: In the step of preparing the removal map data, Obtaining a photoluminescence spectrum of the bonded wafer, using the peak wavelength, peak intensity and / or peak half-width as a judgment criterion, and creating first map data of the defective portion, The bonded wafer is photographed from the bonded substrate side using a CCD camera, and second map data on the defective portion is created based on the color tone of the image obtained by the photography, The surface of the grain pattern of the light emitting element structure of the bonded wafer is photographed by a camera, and whether it is good or not is determined based on the deviation from the basic pattern, and appearance inspection map data is prepared. Map data for removal of the defective portion is created using the first map data, the second map data, and the appearance inspection map data.

6. The method for manufacturing a junction type light emitting element wafer according to claim 1, characterized in that: As the removal laser, a laser having a wavelength of greater than 360 nm and less than or equal to 680 nm is used.

7. The method for manufacturing a junction type light emitting element wafer according to claim 1, characterized in that: The removal laser is incident from the light emitting element structure side or the bonded substrate side.

8. The method for manufacturing a junction type light emitting element wafer according to claim 1, characterized in that: As the adhesive, an adhesive selected from the group consisting of benzocyclobutene, silicone resin, epoxy resin, SOG, polyimide, and amorphous fluorine-based resin is used.

9. The method for manufacturing a junction type light emitting element wafer according to claim 1, wherein: Before removing the portion of the light emitting element structure included in the defective part, a protective material is applied on the light emitting element structure.

10. The method for manufacturing a junction type light emitting element wafer according to claim 9, characterized in that: As the protective material, a protective material containing polyvinyl acetate or a protective material containing polyvinyl alcohol is used.

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