Semiconductor process chamber

Abstract

The embodiment of the invention provides a semiconductor process chamber. The semiconductor process chamber comprises a first cavity, a lining, a second cavity and an exhaust mechanism, the lining is arranged in the first cavity, a surrounding space of the lining forms a first inner cavity, the second cavity comprises a first end part and a second end part, the exhaust mechanism is arranged between the first cavity and the first end part, the second cavity is provided with a second inner cavity extending from the first end part to the second end part, and the lining is provided with an exhaust part communicated with the first inner cavity and the second inner cavity; the exhaust mechanism is used for conveying gas flowing from the first end to the second end along the cavity wall of the second inner cavity. The exhaust mechanism of the semiconductor process chamber sprays the gas to the cavity wall of the second inner cavity, so that a protective gas curtain can be formed to protect the cavity wall of the second inner cavity.

Description

Technical Field

[0001] This application relates to the field of semiconductor process technologies, and particularly to a semiconductor process chamber. Background Art

[0002] During the implementation of semiconductor processes, it is sometimes necessary to protect the chamber wall of a semiconductor process chamber. For example, during the implementation of a plasma etching process, process by-products are discharged into the inner cavity, and the process by-products can corrode the chamber wall of the inner cavity. Therefore, it is necessary to protect the chamber wall. In related technologies, generally, a lining plate is laid on the surface of the chamber wall to protect the chamber wall by using the lining plate. Since the lining plate often needs to be maintained and replaced during use, this will increase the maintenance cost of the semiconductor process chamber. Summary of the Invention

[0003] An embodiment of this application provides a semiconductor process chamber to solve the problem that the lining plate of the semiconductor process chamber in related technologies needs to be regularly maintained and replaced.

[0004] The semiconductor process chamber provided by the embodiment of this application includes: a first cavity, a lining, a second cavity, and an exhaust mechanism; the lining is disposed in the first cavity, a surrounding space of the lining forms a first inner cavity, the second cavity includes a first end and a second end, the exhaust mechanism is disposed between the first cavity and the first end, the second cavity is provided with a second inner cavity extending from the first end to the second end, and the lining is provided with a discharge portion communicating the first inner cavity with the second inner cavity; the exhaust mechanism is used for conveying a gas flowing from the first end to the second end along the chamber wall of the second inner cavity.

[0005] Optionally, the exhaust mechanism is provided with an air inlet and a first exhaust port; the chamber wall of the second inner cavity is provided with a second exhaust port, and in the direction from the first end to the second end, the second exhaust port is located between the first end and the second end, and the air inlet is respectively communicated with the first exhaust port and the second exhaust port; the gas conveyed from the air inlet to the first exhaust port can flow along the chamber wall of the second inner cavity from the first end to the second exhaust port, and the gas conveyed from the air inlet to the second exhaust port can flow from the second exhaust port towards the second end.

[0006] Optionally, the first exhaust port is an annular exhaust port, and the annular exhaust port faces the chamber wall of the second inner cavity.

[0007] Optionally, the exhaust mechanism includes an air inlet seat and a gas distribution ring; the gas distribution ring is connected to the air inlet seat, an air inlet cavity is defined between the gas distribution ring and the air inlet seat, and both the first exhaust port and the second exhaust port are communicated with the air inlet cavity.

[0008] Optionally, the intake seat is provided with a first perforation communicating with the intake cavity, and an orifice of the first perforation facing away from the intake cavity forms the intake port.

[0009] Optionally, the intake seat is carried on the first end portion, the air distribution ring is carried on the intake seat, and the air distribution ring is provided with a plurality of air flow holes communicating the intake cavity and the first exhaust port; the exhaust mechanism further includes a gas blocking ring; the gas blocking ring is connected to the air distribution ring, the gas blocking ring is opposite to the air flow holes, and is spaced apart from one end of the air flow holes facing away from the intake cavity, and the intake seat, the air distribution ring and the gas blocking ring enclose a first annular groove, and an orifice of the first annular groove facing the cavity wall of the second inner cavity forms the first exhaust port.

[0010] Optionally, the intake seat is provided with a second perforation communicating with the intake cavity, and the second cavity is provided with a third perforation communicating the second perforation and the second exhaust port.

[0011] Optionally, the second cavity is provided with a second annular groove, and an orifice of the second annular groove facing the second inner cavity forms the second exhaust port.

[0012] Optionally, the orifice of the second annular groove is inclined and faces the second end portion.

[0013] Optionally, the semiconductor process chamber further includes a base, the base is docked with the second end portion, and an air extraction port is provided on a side of the base facing away from the second end portion, and the air extraction port communicates with the second inner cavity.

[0014] Optionally, the second end portion is provided with a convex ring protruding inwardly towards the second inner cavity, the convex ring is provided with a plurality of fourth perforations, the fourth perforations are inclined, a distance between a top end of the fourth perforation and the cavity wall of the second inner cavity is less than a distance between a bottom end of the fourth perforation and the cavity wall of the second inner cavity, and the bottom end of the fourth perforation faces the air extraction port.

[0015] Optionally, the first inner cavity is a plasma cavity, the second inner cavity is a process by-product cavity, and process by-products in the plasma cavity can be discharged to the process by-product cavity through the discharge portion.

[0016] Optionally, the semiconductor process chamber further includes a heater for heating the gas supplied to the exhaust mechanism.

[0017] Optionally, the semiconductor process chamber further includes a pressure regulating valve for adjusting the air pressure of the gas supplied to the exhaust mechanism.

[0018] The above at least one technical solution adopted in the embodiments of the present application can achieve the following beneficial effects:

[0019] In the embodiments of the present application, since the gas flowing from the first end to the second end can form a protective gas curtain on the cavity wall of the second inner cavity, the cavity wall of the second inner cavity can be protected by using the protective gas curtain. Furthermore, there is no need to set a lining plate to protect the cavity wall of the second inner cavity, so that the problem that the lining plate needs to be regularly maintained and replaced in the semiconductor process chamber in the related art can be solved. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the related art, the following will briefly introduce the drawings required for use in the description of the embodiments or the related art. Obviously, the drawings in the following description are only some embodiments recorded in the present application. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative efforts.

[0021] Figure 1 A cross-sectional view of a semiconductor process chamber provided by an embodiment of the present application;

[0022] Figure 2 A top view of a lining provided by an embodiment of the present application;

[0023] Figure 3 A cross-sectional view of a second cavity and an exhaust mechanism provided by an embodiment of the present application;

[0024] Figure 4 An exploded view of a second cavity and an exhaust mechanism provided by an embodiment of the present application;

[0025] Figure 5 An exploded view of a second cavity and an exhaust mechanism provided by an embodiment of the present application;

[0026] Figure 6 A cross-sectional view of a second cavity, an exhaust mechanism and a base provided by an embodiment of the present application;

[0027] Figure 7 For Figure 3 A partial schematic view of the second cavity and the exhaust mechanism shown in

[0028] Figure 8 A schematic view of the air flow transmission path of an exhaust mechanism provided by an embodiment of the present application;

[0029] Figure 9 A top view of an air distribution ring provided by an embodiment of the present application;

[0030] Figure 10A cross-sectional view of a gas distribution ring provided by an embodiment of the present application;

[0031] Figure 11 For Figure 3 A partial schematic view of the second cavity and the exhaust mechanism shown in;

[0032] Figure 12 A top view of a second cavity provided by an embodiment of the present application;

[0033] Figure 13 A schematic view of a heater provided by an embodiment of the present application;

[0034] Figure 14 A schematic view of the gas flow simulation of a second cavity provided by an embodiment of the present application, which shows the situation of the flow field represented by gas flow arrows;

[0035] Figure 15 A schematic view of the gas flow simulation of a second cavity provided by an embodiment of the present application, which shows the situation of the flow field represented by gas flow streamlines;

[0036] Figure 16 A schematic diagram of a gas supply system provided by an embodiment of the present application;

[0037] Figure 17 A schematic view of a semiconductor process chamber in the related art;

[0038] Figure 18 A schematic view of a cavity and a liner in the related art.

[0039] Explanation of reference numerals:

[0040] 100 - Semiconductor process chamber; 110 - First cavity; 120 - Inner liner; 121 - First inner cavity; 122 - Discharge part; 130 - Second cavity; 131 - First end; 132 - Second end; 1321 - Convex ring; 1322 - Fourth perforation; 133 - Second inner cavity; 134 - Second exhaust port; 135 - Second annular groove; 136 - Third perforation; 140 - Exhaust mechanism; 141 - Intake port; 142 - First exhaust port; 143 - Intake seat; 1431 - First perforation; 1432 - Second perforation; 144 - Gas distribution ring; 1441 - Uniform flow holes; 145 - Intake cavity; 146 - Gas blocking ring; 147 - First annular groove; 150 - Base; 151 - Exhaust port; 161 - Heater; 162 - Pressure regulating valve; 163 - Pressure gauge; 164 - Pneumatic valve; 170 - Lower electrode;

[0041] 210 - Cavity; 211 - Upper chamber; 212 - Lower chamber; 220 - Lower electrode; 230 - Upper electrode assembly; 240 - Negative pressure device; 250 - Liner. Detailed implementation manners

[0042] To make the objectives, technical solutions, and advantages of the present application clearer, the technical solutions of the present application will be clearly and completely described below in conjunction with specific embodiments of the present application and the corresponding drawings. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. All other embodiments obtained by those of ordinary skill in the art based on the embodiments in the present application without creative efforts shall fall within the protection scope of the present application.

[0043] In the description of the present application, it should be noted that unless otherwise clearly specified and defined, the terms "installed", "connected", and "connected" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be directly connected, or indirectly connected through an intermediate medium, and it can be the communication inside two components. For those of ordinary skill in the art, the specific meanings of the above terms in the present application can be understood according to specific circumstances.

[0044] In addition, although the terms used in the present application are selected from well-known and commonly used terms, some of the terms mentioned in the specification of the present application may be selected by the applicant according to his or her judgment, and their detailed meanings are described in the relevant parts of the description herein.

[0045] In addition, it is required to understand the present application not only through the actual terms used, but also through the meanings implied by each term.

[0046] To facilitate the understanding of the solution provided by the embodiments of the present application by those skilled in the art, in combination with Figure 17 and Figure 18 briefly introduce the working principle of a semiconductor process chamber in the related art.

[0047] The semiconductor process chamber includes: a chamber 210, a lower electrode 220, an upper electrode assembly 230, and a negative pressure device 240. The lower electrode 220 divides the chamber 210 into an upper chamber 211 and a lower chamber 212. The upper electrode assembly 230 and the lower electrode 220 are disposed outside the upper chamber 211. When process gas is introduced into the upper chamber 211, plasma is generated in the upper chamber 211 under the action of the upper electrode assembly 230 and the lower electrode 220. The wafer can be processed in the upper chamber 211. Process by-products in the semiconductor process can be discharged through the lower chamber 212 under the suction of the negative pressure device 240.

[0048] There is a lining inside the upper chamber 211, and the lining can be used to prevent plasma from corroding the chamber wall of the upper chamber 211. However, during the process of flowing through the chamber wall of the lower chamber 212, process by-products will corrode the chamber wall of the lower chamber 212. If the chamber wall of the lower chamber 212 is not protected, it will reduce the service life of the chamber 210 and pollute the environment inside the chamber 210.

[0049] In the related art, a lining plate 250 is laid on the surface of the chamber wall of the lower chamber 212. Thus, the lining plate 250 is used to protect the chamber wall of the lower chamber 212. However, during the use of the lining plate 250, it often needs to be maintained and replaced, which will increase the maintenance cost of the semiconductor process chamber. The inventor of the present application provides the following solutions to overcome this defect.

[0050] The following will describe in detail the technical solutions provided by the embodiments of the present application with reference to the accompanying drawings.

[0051] An embodiment of the present application provides a semiconductor process chamber. Referring to Figures 1 to 15 , the semiconductor process chamber 100 provided by the embodiment of the present application includes: a first chamber 110, a lining 120, a second chamber 130, and an exhaust mechanism 140.

[0052] Referring to Figure 1 , the lining 120 is disposed inside the first chamber 110, and the surrounding space of the lining 120 forms a first inner cavity 121. The second chamber 130 includes a first end 131 and a second end 132. The exhaust mechanism 140 is disposed between the first chamber 110 and the first end 131. The second chamber 130 is provided with a second inner cavity 133 extending from the first end 131 to the second end 132. Combining Figure 2 , the lining 120 is provided with a discharge portion 122 communicating the first inner cavity 121 and the second inner cavity 133. Substances in the first inner cavity 121 can be discharged into the second inner cavity 133 through the discharge portion 122. Exemplarily, the first inner cavity 121 is a plasma cavity, and the second inner cavity 133 is a process by-product cavity. Process by-products in the plasma cavity can be discharged into the process by-product cavity through the discharge portion 122.

[0053] The exhaust mechanism 140 is used to convey the gas flowing from the first end 131 to the second end 132 along the chamber wall of the second inner cavity 133. In this way, the gas flowing from the first end 131 to the second end 132 can form a protective gas curtain on the chamber wall of the second inner cavity 133, thereby preventing the chamber wall of the second inner cavity 133 from being corroded by the corrosive substances discharged into it.

[0054] In this way, in the embodiments of the present application, since the gas flowing from the first end 131 to the second end 132 can form a protective gas curtain on the cavity wall of the second inner cavity 133, the cavity wall of the second inner cavity 133 can be protected by using the protective gas curtain. Thus, there is no need to provide a lining plate to protect the cavity wall of the second inner cavity 133, and further, the problem that the lining plate needs to be regularly maintained and replaced in the semiconductor process chamber in the related art can be solved.

[0055] Exemplarily, in some embodiments, the first cavity 110, the exhaust mechanism 140, and the second cavity 130 are vertically stacked, the second cavity 130 is located below the exhaust mechanism 140, and the first cavity 110 is located above the exhaust mechanism 140.

[0056] Reference Figure 3 , in some embodiments, the exhaust mechanism 140 is provided with an air inlet 141 and a first exhaust port 142. The cavity wall of the second inner cavity 133 is provided with a second exhaust port 134. In the direction from the first end 131 towards the second end 132, the second exhaust port 134 is located between the first end 131 and the second end 132, and the air inlet 141 is respectively communicated with the first exhaust port 142 and the second exhaust port 134.

[0057] The gas transported from the air inlet 141 to the first exhaust port 142 can flow along the cavity wall of the second inner cavity 133 from the first end 131 to the second exhaust port 134, and the gas transported from the air inlet 141 to the second exhaust port 134 can flow from the second exhaust port 134 towards the second end 132.

[0058] In this way, the gas at the first exhaust port 142 can be ejected in the vertical direction, so as to form an upper protective gas curtain between the first end 131 and the second exhaust port 134. In addition, when the negative pressure device pumps air from below, the negative pressure device can assist the air flow to flow downward. Further, the second exhaust port 134 can eject gas towards the second end 132, so that a lower protective gas curtain can be formed between the second exhaust port 134 and the second end 132. In this way, the problem that when the height of the second cavity 130 is relatively high, only ejecting gas from the first end 131 cannot well protect the part near the second end 132 can be avoided. Moreover, since the pumping force for exhausting air at the position where the second inner cavity 133 is close to the negative pressure device (such as a molecular pump) is large, the gas discharged from the first exhaust port 142 is easily dissipated under the influence of the pumping force, and the inert gas ejected radially from the second exhaust port 134 can avoid the influence of gas protection failure caused by excessive pumping in the bottom area of the chamber.

[0059] Reference Figures 5 to 7, in some embodiments, the first exhaust port 142 is an annular exhaust port, and the annular exhaust port faces the wall of the second inner cavity 133. In this way, it is convenient to form a protective gas curtain in the circumferential direction of the second inner cavity 133.

[0060] Reference Figures 3 to 7 , in some embodiments, the exhaust mechanism 140 includes an intake seat 143 and a gas distribution ring 144. The gas distribution ring 144 is connected to the intake seat 143, and an intake cavity 145 is defined between the gas distribution ring 144 and the intake seat 143. Both the first exhaust port 142 and the second exhaust port 134 communicate with the intake cavity 145. In this way, the gas delivered to the intake cavity 145 can be respectively delivered to the first exhaust port 142 and the second exhaust port 134, and output from the first exhaust port 142 and the second exhaust port 134, so as to form a protective gas curtain for protecting the wall of the second inner cavity 133.

[0061] Exemplarily, the height of the first inner cavity 121 can be 50 cm to 80 cm. In one embodiment, the height of the first inner cavity 121 is 60 cm, and the height of the inner liner 120 is 15 cm. In the vertical direction, the first exhaust port 142 is located 16 cm below the inner liner 120, and the second exhaust port 134 is located at the central position of the second inner cavity 133.

[0062] In some embodiments, the intake seat 143 is provided with a first through hole 1431 communicating with the intake cavity 145, and the orifice of the first through hole 1431 facing away from the intake cavity 145 forms an intake port 141. In this way, the gas for forming the gas curtain can be delivered to the intake cavity 145 through the intake port 141.

[0063] Combined with Figures 8 to 10 , in some embodiments, the intake seat 143 is carried on the first end portion 131, the gas distribution ring 144 is carried on the intake seat 143, and the gas distribution ring 144 is provided with a plurality of uniform flow holes 1441 communicating the intake cavity 145 and the first exhaust port 142.

[0064] The exhaust mechanism 140 further includes a gas blocking ring 146. The gas blocking ring 146 is connected to the gas distribution ring 144, the gas blocking ring 146 is opposite to the uniform flow holes 1441, and is spaced apart from one end of the uniform flow holes 1441 facing away from the intake cavity 145. The intake seat 143, the gas distribution ring 144 and the gas blocking ring 146 enclose a first annular groove 147. The notch of the first annular groove 147 facing the wall of the second inner cavity 133 forms the first exhaust port 142. Exemplarily, the gas distribution ring 144 is provided with 4 uniform flow holes 1441, and the number of uniform flow holes 1441 in a single place is 11. Of course, in other embodiments, the number of uniform flow holes 1441 can also be flexibly set according to requirements.

[0065] In this way, the gas delivered to the intake cavity 145 can be delivered to the first annular groove 147 through the flow equalizing holes 1441, and then discharged from the notch of the first annular groove 147 toward the cavity wall of the second inner cavity 133, forming a protective gas curtain for protecting the upper cavity wall of the second inner cavity 133. Further, in order to improve the uniformity of gas diffusion, the gas outlet end of the flow equalizing hole 1441 is in a flared shape, that is, the cross-sectional area of the flow equalizing hole 1441 gradually increases along the gas flow direction.

[0066] Exemplarily, the intake seat 143 can be made of an aluminum alloy material, and the intake seat 143 can be subjected to hard anodizing treatment to improve its structural strength. The air distribution ring 144 can be made of a resin material, so that the air distribution ring 144 can meet the requirements of gas lubrication and material cleanliness. The gas blocking ring 146 can be made of an aluminum alloy material, and the gas blocking ring 146 can be subjected to hard anodizing treatment to improve its structural strength. Of course, in other embodiments, the materials of the intake seat 143, the air distribution ring 144, and the gas blocking ring 146 can also be flexibly set according to requirements. In addition, exemplarily, the air distribution ring 144 and the gas blocking ring 146 can be fixed by threaded connectors. Exemplarily, the number of the air inlets 141 can be two, and the two air inlets 141 can be arranged on both sides of the intake seat 143.

[0067] Reference Figure 3 、 Figure 7 and Figure 11 In some embodiments, the intake seat 143 is provided with a second through hole 1432 communicating with the intake cavity 145. The second cavity 130 is provided with a third through hole 136 communicating the second through hole 1432 and the second exhaust port 134. In this way, the gas delivered to the intake cavity 145 can be delivered to the second exhaust port 134 through the second through hole 1432 and the third through hole 136 in sequence, thereby forming a protective gas curtain for protecting the lower cavity wall of the second inner cavity 133.

[0068] Reference Figure 3 、 Figure 7 and Figure 11 In some embodiments, the second cavity 130 is provided with a second annular groove 135. The notch of the second annular groove 135 facing the second inner cavity 133 forms the second exhaust port 134. Further, one end of the third through hole 136 is communicated with the second through hole 1432, and the other end is communicated with the second annular groove 135, so that the gas delivered to the intake cavity 145 can be delivered to the second exhaust port 134 through the second through hole 1432 and the third through hole 136 in sequence, forming a protective gas curtain for protecting the lower cavity wall of the second inner cavity 133.

[0069] It should be noted that in combination with Figure 5, the number of the second through holes 1432 can be multiple, and the number of the third through holes 136 can be multiple. The third through holes 136 are in one-to-one correspondence and dock with the second through holes 1432. In addition, the specific numbers of the second through holes 1432 and the third through holes 136 can be flexibly set according to actual requirements and will not be listed here.

[0070] Reference Figure 11 , in some embodiments, the notch of the second annular groove 135 is inclined and faces the second end portion 132. In this way, it is convenient to guide the substance discharged from the first inner cavity 121 to the second inner cavity 133 to be discharged from the second inner cavity 133 toward the second end portion 132.

[0071] Reference Figure 1 and Figure 6 , in some embodiments, the semiconductor process chamber 100 further includes a base 150. The base 150 docks with the second end portion 132, and an air extraction port 151 is provided on a side of the base 150 facing away from the second end portion 132. The air extraction port 151 communicates with the second inner cavity 133. Exemplarily, a negative pressure device can be connected to the air extraction port 151, so that the substance discharged from the first inner cavity 121 to the second inner cavity 133 can be extracted through the air extraction port 151.

[0072] Reference Figure 1 、 Figure 5 、 Figure 6 and Figure 12, in some embodiments, the second end portion 132 is provided with a convex ring 1321 protruding towards the inner side of the second inner cavity 133. Specifically, the convex ring 1321 protrudes from the inner wall of the second inner cavity 133 towards the inner side of the second inner cavity 133. The convex ring 1321 is provided with a plurality of fourth through holes 1322. The fourth through holes 1322 are inclined, and the distance between the top end of the fourth through hole 1322 and the cavity wall of the second inner cavity 133 is smaller than the distance between the bottom end of the fourth through hole 1322 and the cavity wall of the second inner cavity 133. It should be noted that the distance between the top end of the fourth through hole 1322 and the cavity wall of the second inner cavity 133 refers to the distance between the top end of the fourth through hole 1322 and the part of the cavity wall of the second inner cavity 133 closest to the top end of the fourth through hole 1322. The distance between the bottom end of the fourth through hole 1322 and the cavity wall of the second inner cavity 133 refers to the distance between the bottom end of the fourth through hole 1322 and the part of the cavity wall of the second inner cavity 133 closest to the bottom end of the fourth through hole 1322. In other words, the bottom end of the fourth through hole 1322 is inclined in a direction away from the cavity wall of the second inner cavity 133 relative to the top end of the fourth through hole 1322. The bottom end of the fourth through hole 1322 faces the air extraction port 151. In this way, by combining the inclined notch of the second annular groove 135, the gas discharged from the second exhaust port 134 is discharged in a parabolic shape, which is convenient for guiding the substances discharged from the first inner cavity 121 to the second inner cavity 133 towards the second end portion 132 and discharging them from the second inner cavity 133. It can improve the problem that the substances discharged from the first inner cavity 121 to the second inner cavity 133 may be deposited on the convex ring 1321.

[0073] Reference Figure 13 , in some embodiments, the semiconductor process chamber 100 further includes a heater 161. The heater 161 is used to heat the gas supplied to the exhaust mechanism 140. Exemplarily, the gas supplied to the exhaust mechanism 140 can be an inert protective gas. For example, the inert protective gas can be a gas with inactive chemical properties such as nitrogen. In this way, by heating the gas supplied to the exhaust mechanism 140, the risk of process by-products cooling and depositing on the cavity wall of the second inner cavity 133 can be reduced.

[0074] In some embodiments, the semiconductor process chamber 100 further includes a pressure regulating valve 162. The pressure regulating valve 162 is used to adjust the air pressure of the inert gas supplied to the exhaust mechanism 140. In addition, the semiconductor process chamber 100 further includes a pressure gauge 163, and the pressure gauge 163 is connected to the gas supply pipeline. In this way, by providing the pressure regulating valve 162 and the pressure gauge 163, the intake pressure can meet different pressure requirements generated by the change in the surface area of the cavity wall of the second inner cavity 133, and at the same time, by adjusting the gas source pressure, staged protection of the cavity wall of the second inner cavity 133 can be achieved.

[0075] In some embodiments, the semiconductor processing chamber 100 further includes a pneumatic valve 164. When the semiconductor processing chamber 100 is in a non-operating state, the pneumatic valve 164 can be controlled to be in a closed state.

[0076] In addition, the airflow simulation results of the second inner cavity 133 are as Figure 14 and Figure 15 shown. When nitrogen is introduced as an inert protective gas through the gas inlet 141 of the gas inlet seat 143, the gas is ejected vertically from the first exhaust port 142, and the simulation results show that the inert protective gas flows along the cavity wall of the second inner cavity 133. The gas ejected from the first exhaust port 142 flows in a parabolic shape, so that the process by-products in the second inner cavity 133 are sequentially extracted from the second inner cavity 133 through the fourth through-hole 1322 and the air extraction port 151, so as to improve the problem that the substances discharged from the first inner cavity 121 to the second inner cavity 133 may be deposited on the convex ring 1321.

[0077] Referring to Figure 1 , in some embodiments, the semiconductor processing chamber 100 further includes a lower electrode 170. The inner liner 120 is sleeved outside the lower electrode 170. Further, the semiconductor processing chamber 100 further includes an upper electrode assembly. The upper electrode assembly is disposed above the lower electrode 170. Specifically, the upper electrode assembly, the inner liner 120, and the lower electrode 170 enclose the first inner cavity 121.

[0078] It should be noted that in this article, relational terms such as first and second are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variant thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements not only includes those elements, but also includes other elements not expressly listed, or elements inherent to such process, method, article or device.

[0079] Although the embodiments of the present application have been shown and described, those of ordinary skill in the art can understand that various changes, modifications, substitutions and variations can be made to these embodiments without departing from the principles and spirit of the embodiments of the present application. The scope of the embodiments of the present application is defined by the appended claims and their equivalents.

Claims

1. A semiconductor process chamber, characterized in that: include: A first cavity (110), a liner (120), a second cavity (130), and an exhaust mechanism (140); The liner (120) is arranged in the first cavity (110), the surrounding space of the liner (120) forms a first cavity (121), the second cavity (130) comprises a first end (131) and a second end (132), the exhaust mechanism (140) is arranged between the first cavity (110) and the first end (131), the second cavity (130) is provided with a second cavity (133) extending from the first end (131) to the second end (132), and the liner (120) is provided with a discharge portion (122) communicating the first cavity (121) with the second cavity (133); The exhaust mechanism (140) is used to transport gas flowing along the cavity wall of the second inner cavity (133) from the first end (131) to the second end (132).

2. The semiconductor process chamber according to claim 1, characterized in that: The exhaust mechanism (140) is provided with an air inlet (141) and a first exhaust port (142); the cavity wall of the second inner cavity (133) is provided with a second exhaust port (134); in a direction from the first end portion (131) toward the second end portion (132), the second exhaust port (134) is located between the first end portion (131) and the second end portion (132); the air inlet (141) is respectively connected to the first exhaust port (142) and the second exhaust port (134); The gas supplied from the air inlet (141) to the first exhaust port (142) can flow along the cavity wall of the second inner cavity (133) from the first end (131) to the second exhaust port (134), and the gas supplied from the air inlet (141) to the second exhaust port (134) can flow from the second exhaust port (134) toward the second end (132).

3. The semiconductor process chamber according to claim 2, characterized in that: The first exhaust port (142) is an annular exhaust port, and the annular exhaust port faces the cavity wall of the second inner cavity (133).

4. The semiconductor process chamber according to claim 2, characterized in that: The exhaust mechanism (140) comprises an air intake seat (143) and an air uniforming ring (144); The air-uniform ring (144) is connected to the air-intake seat (143); an air-intake cavity (145) is arranged between the air-uniform ring (144) and the air-intake seat (143); and the first exhaust port (142) and the second exhaust port (134) are both in communication with the air-intake cavity (145).

5. The semiconductor process chamber according to claim 4, characterized in that: The air inlet seat (143) is provided with a first through hole (1431) communicating with the air inlet cavity (145), and the opening of the first through hole (1431) facing away from the air inlet cavity (145) forms the air inlet (141).

6. The semiconductor process chamber according to claim 4, characterized in that: The air inlet seat (143) is carried on the first end portion (131), the air equalizing ring (144) is carried on the air inlet seat (143), and the air equalizing ring (144) is provided with a plurality of flow equalizing holes (1441) connecting the air inlet cavity (145) and the first exhaust port (142); The exhaust mechanism (140) further comprises an air blocking ring (146); the air blocking ring (146) is connected to the air leveling ring (144); the air blocking ring (146) is opposite to the flow leveling hole (1441), and is spaced apart from the end of the flow leveling hole (1441) facing away from the air inlet cavity (145); the air inlet seat (143), the air leveling ring (144) and the air blocking ring (146) form a first annular groove (147); a notch of the first annular groove (147) facing the cavity wall of the second inner cavity (133) forms the first exhaust port (142).

7. The semiconductor process chamber according to claim 4, characterized in that: The air inlet seat (143) is provided with a second through hole (1432) communicating with the air inlet cavity (145), and the second cavity (130) is provided with a third through hole (136) communicating with the second through hole (1432) and the second exhaust port (134).

8. The semiconductor process chamber according to claim 2, wherein: The second cavity (130) is provided with a second annular groove (135), and a notch of the second annular groove (135) facing the second inner cavity (133) forms the second exhaust port (134).

9. The semiconductor process chamber according to claim 8, characterized in that: The notch of the second annular groove (135) is arranged obliquely and faces the second end portion (132).

10. The semiconductor process chamber according to claim 1, wherein: The semiconductor process chamber further comprises a base (150), wherein the base (150) is connected to the second end (132), and a gas extraction port (151) is provided on a side of the base (150) away from the second end (132), and the gas extraction port (151) is connected to the second inner cavity (133).

11. The semiconductor process chamber according to claim 10, characterized in that: The second end portion (132) is provided with a convex ring (1321) protruding toward the inner side of the second inner cavity (133), and the convex ring (1321) is provided with a plurality of fourth through holes (1322). The fourth through holes (1322) are arranged at an angle, and the distance between the top end of the fourth through hole (1322) and the cavity wall of the second inner cavity (133) is smaller than the distance between the bottom end of the fourth through hole (1322) and the cavity wall of the second inner cavity (133), and the bottom end of the fourth through hole (1322) faces the air suction port (151).

12. The semiconductor process chamber according to claim 1, wherein: The first inner cavity (121) is a plasma cavity, and the second inner cavity (133) is a process by-product cavity. The process by-products in the plasma cavity can be discharged into the process by-product cavity through the discharge portion (122).

13. The semiconductor process chamber according to claim 1, wherein: The semiconductor process chamber further comprises a heater (161), wherein the heater (161) is used to heat the gas supplied to the exhaust mechanism (140).

14. The semiconductor process chamber according to claim 1, wherein: The semiconductor process chamber further comprises a pressure regulating valve (162), wherein the pressure regulating valve (162) is used to adjust the pressure of the gas supplied to the exhaust mechanism (140).

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