Semiconductor process chamber

Abstract

The embodiment of the present application provides a semiconductor process chamber, which comprises a first cavity, an inner liner, a second cavity and an exhaust mechanism; the inner liner is arranged in the first cavity, and a surrounding space of the inner liner forms a first inner cavity; the second cavity comprises a first end and a second end; the exhaust mechanism is arranged between the first cavity and the first end; the second cavity is provided with a second inner cavity extending from the first end to the second end; and the inner liner is provided with an exhaust part communicating the first inner cavity and the second inner cavity; and the exhaust mechanism is used for conveying the gas flowing along the cavity wall of the second inner cavity from the first end to the second end. The gas sprayed by the exhaust mechanism of the semiconductor process chamber to the cavity wall of the second inner cavity can form a protective gas curtain to protect the cavity wall of the second inner cavity.

Description

Technical Field

[0001] This application relates to the field of semiconductor process technology, and more particularly to a semiconductor process chamber. Background Technology

[0002] During semiconductor manufacturing processes, it is sometimes necessary to protect the walls of the semiconductor process chambers. For example, during plasma etching, process byproducts are released into the chamber, which can corrode the chamber walls, thus requiring protection. In related technologies, this is typically achieved by laying a substrate on the chamber wall surface. However, since the substrate frequently needs maintenance and replacement, this increases the maintenance costs of the semiconductor process chamber. Summary of the Invention

[0003] This application provides a semiconductor process chamber to address the problem in related technologies where semiconductor process chambers require periodic maintenance and replacement of the substrate.

[0004] The semiconductor process chamber provided in this application includes: a first cavity, an inner liner, a second cavity, and an exhaust mechanism; the inner liner is disposed in the first cavity, and the surrounding space of the inner liner forms a first inner cavity; the second cavity includes a first end and a second end; the exhaust mechanism is disposed between the first cavity and the first end; the second cavity has a second inner cavity extending from the first end to the second end; the inner liner has an exhaust portion communicating between the first inner cavity and the second inner cavity; the exhaust mechanism is used to transport gas flowing along the cavity wall of the second inner cavity from the first end to the second end.

[0005] Optionally, the exhaust mechanism is provided with an air inlet and a first exhaust outlet; the cavity wall of the second inner cavity is provided with a second exhaust outlet, and the second exhaust outlet is located between the first end and the second end in the direction from the first end to the second end. The air inlet is connected to the first exhaust outlet and the second exhaust outlet respectively. The gas supplied from the air inlet to the first exhaust outlet can flow along the cavity wall of the second inner cavity from the first end to the second exhaust outlet, and the gas supplied from the air inlet to the second exhaust outlet can flow from the second exhaust outlet toward the second end.

[0006] Optionally, the first exhaust port is an annular exhaust port, and the annular exhaust port faces the cavity wall of the second inner cavity.

[0007] Optionally, the exhaust mechanism includes an air intake seat and an air distribution ring; the air distribution ring is connected to the air intake seat, and an air intake cavity is formed between the air distribution ring and the air intake seat, and the first exhaust port and the second exhaust port are both connected to the air intake cavity.

[0008] Optionally, the air intake seat is provided with a first through hole communicating with the air intake chamber, and the opening of the first through hole opposite to the air intake chamber forms the air intake port.

[0009] Optionally, the air intake seat is supported on the first end, the air distribution ring is supported on the air intake seat, and the air distribution ring is provided with a plurality of flow distribution holes communicating with the air intake chamber and the first exhaust port; the exhaust mechanism further includes a baffle ring; the baffle ring is connected to the air distribution ring, the baffle ring is opposite to the flow distribution holes, and is spaced apart from the end of the flow distribution holes that is away from the air intake chamber; the air intake seat, the air distribution ring, and the baffle ring form a first annular groove, and the groove of the first annular groove facing the cavity wall of the second inner cavity forms the first exhaust port.

[0010] Optionally, the air intake seat is provided with a second through hole communicating with the air intake chamber, and the second chamber is provided with a third through hole communicating with the second through hole and the second exhaust port.

[0011] Optionally, the second cavity is provided with a second annular groove, and the groove of the second annular groove facing the second inner cavity forms the second exhaust port.

[0012] Optionally, the opening of the second annular groove is inclined and faces the second end.

[0013] Optionally, the semiconductor process chamber further includes a base, which is connected to the second end, and an air extraction port is provided on the side of the base opposite to the second end, which communicates with the second inner cavity.

[0014] Optionally, the second end is provided with a protruding ring extending toward the inner side of the second inner cavity. The protruding ring is provided with a plurality of fourth perforations. The fourth perforations are inclined. The distance between the top end of the fourth perforation and the cavity wall of the second inner cavity is less than the distance between the bottom end of the fourth perforation and the cavity wall of the second inner cavity. The bottom end of the fourth perforation faces the air extraction port.

[0015] Optionally, the first inner cavity is a plasma cavity, and the second inner cavity is a process by-product cavity, wherein the process by-products in the plasma cavity can be discharged into the process by-product cavity through the discharge section.

[0016] Optionally, the semiconductor process chamber further includes a heater for heating the gas supplied to the exhaust mechanism.

[0017] Optionally, the semiconductor process chamber further includes a pressure regulating valve for adjusting the gas pressure supplied to the exhaust mechanism.

[0018] The above-described technical solutions adopted in the embodiments of this application can achieve the following beneficial effects:

[0019] In the embodiments of this application, since the gas flowing from the first end to the second end can form a protective gas curtain on the cavity wall of the second inner cavity, the cavity wall of the second inner cavity can be protected by the protective gas curtain. Therefore, it is unnecessary to install a liner to protect the cavity wall of the second inner cavity, thus solving the problem in related technologies where semiconductor process chambers require periodic maintenance and replacement of the liner. Attached Figure Description

[0020] To more clearly illustrate the technical solutions in the embodiments or related technologies of this application, the drawings used in the description of the embodiments or related technologies will be briefly introduced below. Obviously, the drawings described below are only some embodiments recorded in this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0021] Figure 1 A cross-sectional view of a semiconductor process chamber provided in an embodiment of this application;

[0022] Figure 2 A top view of a lining provided in an embodiment of this application;

[0023] Figure 3 A cross-sectional view of a second cavity and an exhaust mechanism provided in an embodiment of this application;

[0024] Figure 4 An exploded view of a second cavity and an exhaust mechanism provided in an embodiment of this application;

[0025] Figure 5 An exploded view of a second cavity and an exhaust mechanism provided in an embodiment of this application;

[0026] Figure 6 A cross-sectional view of a second cavity, an exhaust mechanism, and a base provided for an embodiment of this application;

[0027] Figure 7 for Figure 3 A partial schematic diagram of the second chamber and the exhaust mechanism is shown in the figure;

[0028] Figure 8 A schematic diagram of the airflow delivery path of an exhaust mechanism provided in an embodiment of this application;

[0029] Figure 9 A top view of a gas distribution ring provided in an embodiment of this application;

[0030] Figure 10A cross-sectional view of a gas distribution ring provided in an embodiment of this application;

[0031] Figure 11 for Figure 3 A partial schematic diagram of the second chamber and the exhaust mechanism is shown in the figure;

[0032] Figure 12 A top view of a second cavity provided in an embodiment of this application;

[0033] Figure 13 A schematic diagram of a heater provided for an embodiment of this application;

[0034] Figure 14 A schematic diagram of airflow simulation for a second cavity provided in an embodiment of this application shows the flow field represented by airflow arrows;

[0035] Figure 15 This is a schematic diagram of airflow simulation for a second cavity provided in an embodiment of this application, which shows the flow field represented by airflow streamlines;

[0036] Figure 16 A schematic diagram of a gas supply system provided in an embodiment of this application;

[0037] Figure 17 This is a schematic diagram of a semiconductor process chamber in related technologies;

[0038] Figure 18 This is a schematic diagram of the cavity and liner in the related technology.

[0039] Explanation of reference numerals in the attached figures:

[0040] 100 - Semiconductor process chamber; 110 - First cavity; 120 - Liner; 121 - First inner cavity; 122 - Exhaust section; 130 - Second cavity; 131 - First end; 132 - Second end; 1321 - Protruding ring; 1322 - Fourth through hole; 133 - Second inner cavity; 134 - Second exhaust port; 135 - Second annular groove; 136 - Third through hole; 140 - Exhaust mechanism; 141 142 - Air inlet; 143 - First exhaust port; 144 - Air inlet seat; 145 - First perforation; 146 - Second perforation; 147 - Air distribution ring; 148 - Flow distribution hole; 149 - Air inlet chamber; 140 - Air baffle ring; 141 - First annular groove; 150 - Base; 151 - Air extraction port; 161 - Heater; 162 - Pressure regulating valve; 163 - Pressure gauge; 164 - Pneumatic valve; 170 - Lower electrode;

[0041] 210-Cavity; 211-Upper chamber; 212-Lower chamber; 220-Lower electrode; 230-Upper electrode assembly; 240-Negative pressure device; 250-Liner. Detailed Implementation

[0042] To make the objectives, technical solutions, and advantages of this application clearer, the technical solutions of this application will be clearly and completely described below in conjunction with specific embodiments and corresponding drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0043] In the description of this application, it should be noted that, unless otherwise expressly specified and limited, the terms "installation," "connection," and "joining" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal communication between two components. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.

[0044] Furthermore, although the terminology used in this application is selected from commonly known and used terms, some terms mentioned in this application specification may have been selected by the applicant at his or her own discretion, and their detailed meanings are explained in the relevant sections of this description.

[0045] Furthermore, this application is required to be understood not only through the actual terms used, but also through the meaning implied by each term.

[0046] To facilitate understanding of the solutions provided in the embodiments of this application by those skilled in the art, in conjunction with Figure 17 and Figure 18 This section provides a brief overview of the working principle of semiconductor process chambers in related technologies.

[0047] The semiconductor process chamber includes a cavity 210, a lower electrode 220, an upper electrode assembly 230, and a negative pressure device 240. The lower electrode 220 divides the cavity 210 into an upper chamber 211 and a lower chamber 212. The upper electrode assembly 230 and the lower electrode 220 surround the upper chamber 211. When process gas is introduced into the upper chamber 211, plasma is generated within the upper chamber 211 under the action of the upper electrode assembly 230 and the lower electrode 220. Wafers can be processed within the upper chamber 211. Process byproducts from the semiconductor process can be discharged through the lower chamber 212 under the suction action of the negative pressure device 240.

[0048] The upper chamber 211 is lined to prevent plasma from corroding its walls. However, process byproducts corrode the walls of the lower chamber 212 as they flow through it. If the walls of the lower chamber 212 are not protected, the service life of the chamber 210 will be reduced, and the environment inside the chamber 210 will be contaminated.

[0049] In related technologies, a liner 250 is laid on the surface of the cavity wall of the lower chamber 212. This liner 250 protects the cavity wall of the lower chamber 212. However, since the liner 250 frequently requires maintenance and replacement during use, this increases the maintenance cost of the semiconductor process cavity. To overcome this drawback, the inventors of this application provide the following solution.

[0050] The technical solutions provided by the various embodiments of this application are described in detail below with reference to the accompanying drawings.

[0051] This application provides a semiconductor process chamber. (See reference...) Figures 1 to 15 The semiconductor process chamber 100 provided in this application embodiment includes: a first chamber 110, an inner liner 120, a second chamber 130, and an exhaust mechanism 140.

[0052] refer to Figure 1 A liner 120 is disposed within the first cavity 110, and the surrounding space of the liner 120 forms a first inner cavity 121. A second cavity 130 includes a first end 131 and a second end 132. An exhaust mechanism 140 is disposed between the first cavity 110 and the first end 131. The second cavity 130 has a second inner cavity 133 extending from the first end 131 to the second end 132. Figure 2 The liner 120 is provided with a discharge section 122 connecting the first inner cavity 121 and the second inner cavity 133. Substances within the first inner cavity 121 can be discharged into the second inner cavity 133 via the discharge section 122. For example, the first inner cavity 121 is a plasma cavity, and the second inner cavity 133 is a process by-product cavity. Process by-products within the plasma cavity can be discharged into the process by-product cavity via the discharge section 122.

[0053] The exhaust mechanism 140 is used to deliver gas flowing from the first end 131 to the second end 132 along the cavity wall of the second inner cavity 133. In this way, the gas flowing from the first end 131 to the second end 132 can form a protective air curtain on the cavity wall of the second inner cavity 133, thereby preventing the cavity wall of the second inner cavity 133 from being corroded by corrosive substances discharged therein.

[0054] In this way, in the embodiments of this application, since the gas flowing from the first end 131 to the second end 132 can form a protective gas curtain on the cavity wall of the second inner cavity 133, the cavity wall of the second inner cavity 133 can be protected by the protective gas curtain. Therefore, it is no longer necessary to provide a liner to protect the cavity wall of the second inner cavity 133, thereby solving the problem in related technologies where semiconductor process chambers require periodic maintenance and replacement of the liner.

[0055] For example, in some embodiments, the first cavity 110, the exhaust mechanism 140 and the second cavity 130 are vertically stacked, with the second cavity 130 located below the exhaust mechanism 140 and the first cavity 110 located above the exhaust mechanism 140.

[0056] refer to Figure 3 In some embodiments, the exhaust mechanism 140 is provided with an air inlet 141 and a first exhaust outlet 142. The cavity wall of the second inner cavity 133 is provided with a second exhaust outlet 134. In the direction from the first end 131 to the second end 132, the second exhaust outlet 134 is located between the first end 131 and the second end 132. The air inlet 141 is connected to the first exhaust outlet 142 and the second exhaust outlet 134 respectively.

[0057] The gas supplied from the inlet 141 to the first outlet 142 can flow along the wall of the second inner cavity 133 from the first end 131 to the second outlet 134, and the gas supplied from the inlet 141 to the second outlet 134 can flow from the second outlet 134 toward the second end 132.

[0058] In this way, the gas from the first exhaust port 142 can be ejected vertically, thereby forming an upper protective air curtain between the first end 131 and the second exhaust port 134. Furthermore, when the negative pressure device draws air from below, it can assist the airflow downwards. Further, the second exhaust port 134 can eject gas towards the second end 132, thereby forming a lower protective air curtain between the second exhaust port 134 and the second end 132. This avoids the problem that when the second cavity 130 is relatively high, gas ejected only from the first end 131 may not adequately protect the area near the second end 132. Moreover, since the suction force of the second inner cavity 133 near the negative pressure device (e.g., a molecular pump) is large, the gas discharged from the first exhaust port 142 is easily dispersed due to the suction force. The inert gas ejected radially from the second exhaust port 134 can prevent the gas protection from failing in the bottom area of ​​the chamber due to excessive suction.

[0059] refer to Figures 5 to 7In some embodiments, the first exhaust port 142 is an annular exhaust port facing the cavity wall of the second inner cavity 133. This facilitates the formation of a protective air curtain in the circumferential direction of the second inner cavity 133.

[0060] refer to Figures 3 to 7 In some embodiments, the exhaust mechanism 140 includes an air inlet seat 143 and a gas distribution ring 144. The gas distribution ring 144 is connected to the air inlet seat 143, and an air inlet cavity 145 is formed between the air distribution ring 144 and the air inlet seat 143. The first exhaust port 142 and the second exhaust port 134 are both connected to the air inlet cavity 145. In this way, the gas delivered to the air inlet cavity 145 can be delivered to the first exhaust port 142 and the second exhaust port 134 respectively, and output from the first exhaust port 142 and the second exhaust port 134, thereby forming a protective air curtain that protects the cavity wall of the second inner cavity 133.

[0061] For example, the height of the first inner cavity 121 can be 50 cm to 80 cm. In one embodiment, the height of the first inner cavity 121 is 60 cm, and the height of the liner 120 is 15 cm. In the vertical direction, the first exhaust port 142 is located 16 cm below the liner 120, and the second exhaust port 134 is located in the center of the second inner cavity 133.

[0062] In some embodiments, the air intake seat 143 is provided with a first through hole 1431 communicating with the air intake chamber 145, and the opening of the first through hole 1431 facing away from the air intake chamber 145 forms an air inlet 141. In this way, gas for forming an air curtain can be delivered to the air intake chamber 145 through the air inlet 141.

[0063] Combination Figures 8 to 10 In some embodiments, the air intake seat 143 is supported on the first end 131, and the air distribution ring 144 is supported on the air intake seat 143. The air distribution ring 144 is provided with a plurality of flow distribution holes 1441 that connect the air intake chamber 145 and the first exhaust port 142.

[0064] The exhaust mechanism 140 also includes a baffle ring 146. The baffle ring 146 is connected to the equalizing ring 144, and is opposite to the equalizing hole 1441, and is spaced apart from the end of the equalizing hole 1441 that is away from the intake chamber 145. The intake seat 143, the equalizing ring 144, and the baffle ring 146 form a first annular groove 147. The groove of the first annular groove 147 facing the cavity wall of the second inner cavity 133 forms a first exhaust port 142. Exemplarily, the equalizing ring 144 has four equalizing holes 1441, and the number of equalizing holes 1441 at a single location is 11. Of course, in other embodiments, the number of equalizing holes 1441 can be flexibly set according to needs.

[0065] In this way, the gas delivered to the intake chamber 145 can be transported to the first annular groove 147 through the flow equalization hole 1441, and then discharged towards the cavity wall of the second inner cavity 133 through the groove opening of the first annular groove 147, forming a protective air curtain that protects the upper cavity wall of the second inner cavity 133. Furthermore, in order to improve the uniformity of gas diffusion, the outlet end of the flow equalization hole 1441 is funnel-shaped, that is, the cross-sectional area of ​​the flow equalization hole 1441 gradually increases along the gas flow direction.

[0066] For example, the air intake seat 143 may be made of aluminum alloy and may undergo hard anodizing to improve its structural strength. The gas distribution ring 144 may be made of resin material, thus enabling the gas distribution ring 144 to meet the requirements of gas lubrication and material cleanliness. The gas baffle ring 146 may be made of aluminum alloy and may undergo hard anodizing to improve its structural strength. Of course, in other embodiments, the materials of the air intake seat 143, the gas distribution ring 144, and the gas baffle ring 146 can be flexibly set as needed. In addition, for example, the gas distribution ring 144 and the gas baffle ring 146 can be fixed by threaded connectors. For example, the number of air inlets 141 can be two, and the two air inlets 141 can be arranged on both sides of the air intake seat 143.

[0067] refer to Figure 3 , Figure 7 and Figure 11 In some embodiments, the air intake seat 143 is provided with a second through hole 1432 communicating with the air intake chamber 145. The second cavity 130 is provided with a third through hole 136 communicating with the second through hole 1432 and the second exhaust port 134. In this way, the gas delivered to the air intake chamber 145 can be delivered to the second exhaust port 134 in sequence through the second through hole 1432 and the third through hole 136, thereby forming a protective air curtain that protects the lower cavity wall of the second inner cavity 133.

[0068] refer to Figure 3 , Figure 7 and Figure 11 In some embodiments, the second cavity 130 is provided with a second annular groove 135. The groove of the second annular groove 135 facing the second inner cavity 133 forms a second exhaust port 134. Further, one end of the third perforation 136 is connected to the second perforation 1432, and the other end is connected to the second annular groove 135, so that the gas delivered to the intake cavity 145 can be delivered to the second exhaust port 134 in sequence through the second perforation 1432 and the third perforation 136, forming a protective air curtain to protect the lower cavity wall of the second inner cavity 133.

[0069] It should be noted that, in combination Figure 5The number of second perforations 1432 and the number of third perforations 136 can be multiple, with each third perforation 136 corresponding to a second perforation 1432. Furthermore, the specific number of second perforations 1432 and third perforations 136 can be flexibly set according to actual needs, and will not be listed here.

[0070] refer to Figure 11 In some embodiments, the opening of the second annular groove 135 is inclined and faces the second end 132. This facilitates the guidance of material discharged from the first inner cavity 121 into the second inner cavity 133 towards the second end 132 and out of the second inner cavity 133.

[0071] refer to Figure 1 and Figure 6 In some embodiments, the semiconductor process chamber 100 further includes a base 150. The base 150 is mated to the second end 132, and a suction port 151 is provided on the side of the base 150 opposite to the second end 132, which communicates with the second inner cavity 133. Exemplarily, a negative pressure device can be connected to the suction port 151, thereby allowing material discharged from the first inner cavity 121 into the second inner cavity 133 to be extracted through the suction port 151.

[0072] refer to Figure 1 , Figure 5 , Figure 6 and Figure 12In some embodiments, the second end 132 is provided with a protruding ring 1321 extending toward the inner side of the second inner cavity 133. Specifically, the protruding ring 1321 protrudes from the inner wall of the second inner cavity 133 toward the inner side of the second inner cavity 133. The protruding ring 1321 is provided with a plurality of fourth through holes 1322. The fourth through holes 1322 are inclined, and the distance between the top end of the fourth through hole 1322 and the cavity wall of the second inner cavity 133 is less than the distance between the bottom end of the fourth through hole 1322 and the cavity wall of the second inner cavity 133. It should be noted that the distance between the top end of the fourth through hole 1322 and the cavity wall of the second inner cavity 133 refers to the distance between the top end of the fourth through hole 1322 and the closest part of the cavity wall of the second inner cavity 133 to the top end of the fourth through hole 1322. The distance between the bottom end of the fourth perforation 1322 and the cavity wall of the second inner cavity 133 refers to the distance between the lowest point of the fourth perforation 1322 and the closest point on the cavity wall of the second inner cavity 133 to the lowest point of the fourth perforation 1322. In other words, the bottom end of the fourth perforation 1322 is inclined away from the cavity wall of the second inner cavity 133 relative to the top end of the fourth perforation 1322. The bottom end of the fourth perforation 1322 faces the exhaust port 151. In this way, by combining the inclined arrangement of the groove opening of the second annular groove 135, the gas discharged from the second exhaust port 134 is discharged in a parabolic manner, which facilitates the guidance of the material discharged from the first inner cavity 121 to the second inner cavity 133 towards the second end 132 and discharged from the second inner cavity 133. This can improve the problem that the material discharged from the first inner cavity 121 to the second inner cavity 133 may deposit on the convex ring 1321.

[0073] refer to Figure 13 In some embodiments, the semiconductor process chamber 100 further includes a heater 161. The heater 161 is used to heat the gas supplied to the exhaust mechanism 140. Exemplarily, the gas supplied to the exhaust mechanism 140 can be an inert protective gas. For example, the inert protective gas can be a chemically inert gas such as nitrogen. In this way, by heating the gas supplied to the exhaust mechanism 140, the risk of process byproducts cooling and depositing on the walls of the second inner cavity 133 can be reduced.

[0074] In some embodiments, the semiconductor process chamber 100 further includes a pressure regulating valve 162. The pressure regulating valve 162 is used to adjust the pressure of the inert gas supplied to the exhaust mechanism 140. Furthermore, the semiconductor process chamber 100 also includes a pressure gauge 163, which is connected to the gas supply pipe. Thus, by setting the pressure regulating valve 162 and the pressure gauge 163, the intake pressure can meet the different pressure requirements caused by variations in the surface area of ​​the second inner cavity 133's wall. Simultaneously, by adjusting the gas source pressure, staged protection of the second inner cavity 133's wall can be achieved.

[0075] In some embodiments, the semiconductor process chamber 100 further includes a pneumatic valve 164. When the semiconductor process chamber 100 is in a non-operating state, the pneumatic valve 164 can be controlled to be in a closed state.

[0076] In addition, the airflow simulation results of the second inner cavity 133 are as follows: Figure 14 and Figure 15 As shown, with nitrogen gas introduced into the air inlet 141 of the air inlet seat 143 as an inert protective gas, the first exhaust port 142 ejects gas vertically. Simulation results show that the inert protective gas flows along the cavity wall of the second inner cavity 133. The gas ejected from the first exhaust port 142 flows in a parabolic shape, causing the process byproducts of the second inner cavity 133 to be extracted from the second inner cavity 133 sequentially through the fourth perforation 1322 and the extraction port 151, thereby improving the problem that the material discharged from the first inner cavity 121 into the second inner cavity 133 may deposit on the convex ring 1321.

[0077] refer to Figure 1 In some embodiments, the semiconductor process chamber 100 further includes a lower electrode 170. A liner 120 is fitted over the lower electrode 170. Further, the semiconductor process chamber 100 also includes an upper electrode assembly. The upper electrode assembly is disposed above the lower electrode 170. Specifically, the upper electrode assembly, the liner 120, and the lower electrode 170 form a first inner cavity 121.

[0078] It should be noted that, in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such process, method, article, or apparatus.

[0079] Although embodiments of this application have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and variations can be made to these embodiments without departing from the principles and spirit of the embodiments of this application, the scope of which is defined by the appended claims and their equivalents.

Claims

1. A semiconductor process chamber, characterized in that, include: The first cavity (110), the inner liner (120), the second cavity (130), and the exhaust mechanism (140). The liner (120) is disposed inside the first cavity (110), and the surrounding space of the liner (120) forms a first inner cavity (121). The second cavity (130) includes a first end (131) and a second end (132). The exhaust mechanism (140) is disposed between the first cavity (110) and the first end (131). The second cavity (130) has a second inner cavity (133) extending from the first end (131) to the second end (132). The liner (120) has an exhaust portion (122) that connects the first inner cavity (121) and the second inner cavity (133). The exhaust mechanism (140) is used to deliver gas flowing from the first end (131) to the second end (132) along the cavity wall of the second inner cavity (133) to form a protective air curtain on the cavity wall of the second inner cavity (133).

2. The semiconductor process chamber according to claim 1, characterized in that, The exhaust mechanism (140) is provided with an air inlet (141) and a first exhaust outlet (142); the cavity wall of the second inner cavity (133) is provided with a second exhaust outlet (134), and the second exhaust outlet (134) is located between the first end (131) and the second end (132) in the direction from the first end (131) toward the second end (132), and the air inlet (141) is connected to the first exhaust outlet (142) and the second exhaust outlet (134) respectively; The gas supplied from the air inlet (141) to the first exhaust port (142) can flow along the cavity wall of the second inner cavity (133) from the first end (131) to the second exhaust port (134), and the gas supplied from the air inlet (141) to the second exhaust port (134) can flow from the second exhaust port (134) toward the second end (132).

3. The semiconductor process chamber according to claim 2, characterized in that, The first exhaust port (142) is an annular exhaust port, which faces the cavity wall of the second inner cavity (133).

4. The semiconductor process chamber according to claim 2, characterized in that, The exhaust mechanism (140) includes an air intake seat (143) and an air distribution ring (144). The uniform air ring (144) is connected to the air inlet seat (143), and an air inlet cavity (145) is provided between the uniform air ring (144) and the air inlet seat (143). The first exhaust port (142) and the second exhaust port (134) are both connected to the air inlet cavity (145).

5. The semiconductor process chamber according to claim 4, characterized in that, The air intake seat (143) is provided with a first through hole (1431) communicating with the air intake cavity (145), and the opening of the first through hole (1431) facing away from the air intake cavity (145) forms the air intake port (141).

6. The semiconductor process chamber according to claim 4, characterized in that, The air intake seat (143) is supported on the first end (131), and the air distribution ring (144) is supported on the air intake seat (143). The air distribution ring (144) is provided with a plurality of flow distribution holes (1441) that connect the air intake chamber (145) and the first exhaust port (142). The exhaust mechanism (140) further includes an air baffle ring (146); the air baffle ring (146) is connected to the air equalization ring (144), the air baffle ring (146) is opposite to the flow equalization hole (1441), and is spaced apart from the end of the flow equalization hole (1441) away from the air intake chamber (145). The air intake seat (143), the air equalization ring (144) and the air baffle ring (146) form a first annular groove (147), and the groove of the first annular groove (147) facing the cavity wall of the second inner cavity (133) forms the first exhaust port (142).

7. The semiconductor process chamber according to claim 4, characterized in that, The air intake seat (143) is provided with a second through hole (1432) communicating with the air intake chamber (145), and the second chamber (130) is provided with a third through hole (136) communicating with the second through hole (1432) and the second exhaust port (134).

8. The semiconductor process chamber according to claim 2, characterized in that, The second cavity (130) is provided with a second annular groove (135), and the groove of the second annular groove (135) facing the second inner cavity (133) forms the second exhaust port (134).

9. The semiconductor process chamber according to claim 8, characterized in that, The opening of the second annular groove (135) is inclined and faces the second end (132).

10. The semiconductor process chamber according to claim 1, characterized in that, The semiconductor process chamber also includes a base (150), which is connected to the second end (132). The base (150) has an air extraction port (151) on the side opposite to the second end (132), and the air extraction port (151) is connected to the second inner cavity (133).

11. The semiconductor process chamber according to claim 10, characterized in that, The second end (132) is provided with a protruding ring (1321) protruding towards the inner side of the second inner cavity (133). The protruding ring (1321) is provided with a plurality of fourth perforations (1322). The fourth perforations (1322) are inclined. The distance between the top end of the fourth perforation (1322) and the cavity wall of the second inner cavity (133) is smaller than the distance between the bottom end of the fourth perforation (1322) and the cavity wall of the second inner cavity (133). The bottom end of the fourth perforation (1322) faces the air extraction port (151).

12. The semiconductor process chamber according to claim 1, characterized in that, The first inner cavity (121) is a plasma cavity, and the second inner cavity (133) is a process by-product cavity. The process by-products in the plasma cavity can be discharged to the process by-product cavity through the discharge section (122).

13. The semiconductor process chamber according to claim 1, characterized in that, The semiconductor process chamber also includes a heater (161) for heating the gas supplied to the exhaust mechanism (140).

14. The semiconductor process chamber according to claim 1, characterized in that, The semiconductor process chamber also includes a pressure regulating valve (162) for adjusting the gas pressure supplied to the exhaust mechanism (140).

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