A wafer double-sided thinning device and method

Abstract

The present application provides a double-sided wafer thinning device and method, which belongs to the field of wafer processing technology and solves the problem that the thinned finished product in the prior art is easily damaged by residual impurities when taking out the material. The double-sided wafer thinning device of the present application includes a bearing, a first plate, a second plate, a thinning component, an air supply component and a material taking component. The bearing is used to radially support the outer peripheral side of the processed workpiece. The first plate is arranged on the first side of the bearing, and the first plate is provided with a first hole. The second plate is arranged on the second side of the bearing, and the second plate is provided with a second hole. The air supply component includes an air supply pipe and an air supply member. The air supply pipe is multiple and at least arranged on the first plate. The air supply pipe faces the second plate. The material taking component includes a vacuum adsorption member and a flow direction adjusting member. The vacuum adsorption member adsorbs the processed workpiece, and the flow direction adjusting member can adjust the flow direction of the gas output by the air supply member. The present application can clean the wafer and the first plate while taking out the material, avoiding partial bending of the wafer and wear of silicon powder.

Description

Technical Field

[0001] This application belongs to the technical field of wafer processing. Specifically, it relates to a wafer double-sided thinning device and method. Background Art

[0002] In a double-sided thinning machine, after the wafer is processed in an upright state, it needs to be taken out in an upright state from the structure clamped by the two side plates. The existing material taking method is that the wafer is pushed to one side, and the front side of the side plate adsorbs the wafer. Subsequently, the slender material taking hand extends downward into the processing area. After the material taking hand vacuum adsorbs and fixes the wafer from the other side, it then leaves the processing area.

[0003] However, after the existing wafer processing is completed, silicon powder impurities inevitably remain between the two sides of the wafer and the side plates. When the wafer is adsorbed on one side plate from the front, due to the limited number of vacuum ports, the silicon powder impurities near the vacuum ports will generate relatively large stress on the wafer, resulting in poor local parameters and surface quality.

[0004] Based on the above, the technical problem to be solved by this application is that the thinned finished product is easily damaged by residual impurities during material taking. Summary of the Invention

[0005] The purpose of this application is to address the above problems existing in the prior art, and proposes a wafer double-sided thinning device and method, which solves the problem that the thinned finished product is easily damaged by residual impurities during material taking in the prior art, and reduces the damage rate of the wafer during material taking after thinning.

[0006] The object of the present application can be achieved by the following technical solutions: A wafer double-sided thinning device includes a carrier for radially supporting the outer peripheral side of a workpiece to be processed; a first plate disposed on a first side of the carrier, with a first through hole provided in the first plate; a second plate disposed on a second side of the carrier, with a second through hole provided in the second plate; a thinning assembly including: a first thinning grinding wheel having a degree of freedom of movement along the first through hole; a second thinning grinding wheel having a degree of freedom of movement along the second through hole; a gas supply assembly including: a plurality of gas delivery pipes at least disposed on the first plate and facing the second plate; a gas delivery member communicating with the gas delivery pipes for outputting gas to push the workpiece to be processed into contact with the second plate; and a material taking assembly including: a vacuum suction member having at least a degree of freedom of movement between the first plate and the second plate, with a suction air flow channel communicated with a side of the vacuum suction member facing away from the second plate, and the suction air flow channel sucks air to enable the vacuum suction member to adsorb the workpiece; a flow direction adjusting member including: a first elastic member disposed in the suction air flow channel and deformable in the direction of the second plate under the action of the suction of the suction air flow channel; a second elastic member disposed on the first elastic member and facing away from the second plate, the second elastic member having a first state of deforming and bending towards the first plate and a second state of deforming and bending towards the second plate, and the second elastic member can be switched between the first state and the second state along with the deformation of the first elastic member to adjust the flow direction of the gas output by the gas delivery member.

[0007] Exemplarily, the carrier can be in a ring shape to circumferentially carry the workpiece to be processed. Alternatively, the carrier can be in the shape of multiple wheel bodies or arcs to circumferentially carry the workpiece to be processed at multiple points. The workpiece to be processed in this application is a wafer or a silicon wafer. The first plate body and the second plate body approach each other to clamp both sides of the workpiece to be processed. By respectively digging holes in the first plate body and the second plate body, a first thinning grinding wheel and a second thinning grinding wheel are respectively arranged. The first thinning grinding wheel and the second thinning grinding wheel can be axially fed to perform thinning processing on both sides of the workpiece to be processed. The air delivery pipe of the air delivery assembly can be controlled to be opened or closed by a valve. The gas is delivered through the air delivery member, and the gas is sent out from the air delivery pipe. Subsequently, the gas moves towards the workpiece to be processed, thereby pushing the workpiece to be processed to adhere to the second plate body to be fixed, and also cleaning the silicon powder on the surface of the workpiece. Then, the vacuum suction member of the material taking assembly can move downwards and adsorb the workpiece to be processed. The vacuum suction member adsorbs by pumping air through the air pumping channel. When pumping air through the air pumping channel, the first elastic member is driven to deform by the negative pressure inside the air pumping channel. The deformation of the first elastic member drives the deformation of the second elastic member. The deformation bending direction of the second elastic member in the first state is opposite to the deformation bending direction in the second state. By using the second elastic member to switch between the first state and the second state, the flow direction of the gas after acting on the second elastic member is adjusted. Moreover, the gas flow area after the second elastic member bends and returns is larger than the original gas flow area, and the blowing range can be wider, so as to ensure that the silicon powder on the first plate surface can be effectively removed. In this application, the method of pushing the workpiece to be processed onto the second plate body by a uniform air flow is used to replace the original method of directly vacuum adsorbing the workpiece to be processed by the second plate body, reducing the probability of the workpiece to be processed being damaged by silicon powder due to uneven force. The second elastic member is triggered to adjust the gas flow direction by pumping air through the air pumping channel, and at the same time, the first plate body is cleaned. Subsequently, the first plate body can also be rotated with the second plate body as the part in contact with the workpiece to be processed, so as to facilitate the stable and damage-free material taking of the material taking assembly.

[0008] In the above-mentioned wafer double-sided thinning device, the elastic modulus of the first elastic member is greater than that of the second elastic member; in the first state, the part of the second elastic member facing the first plate body deforms to form a convex forward flow guiding part, and the edge of the forward flow guiding part extends towards the direction of the second plate body; in the second state, the part of the second elastic member facing the first plate body deforms to form a concave reverse flow guiding part, and the edge of the reverse flow guiding part extends towards the direction of the first plate body. It can be understood that the second elastic member in the first state can form a forward flow guiding part. After the gas output by the air delivery member is guided by the forward flow guiding part, its air pressure acting force can indirectly act on the workpiece to be processed. After the gas passes through the reverse flow guiding part, its air flow can flow towards the first plate body, thereby blowing the silicon powder debris on the first plate body.

[0009] In the above-mentioned double-sided wafer thinning device, the material picking assembly also includes a material picking rack, the vacuum adsorbent is provided on the side of the material picking rack close to the second plate body, the air extraction passage is formed in the material picking rack, and a suction member is provided on the material picking rack, and the suction member is communicated with the air extraction passage. Exemplarily, the material picking rack is a manipulator, the suction member is an air pump, and the vacuum adsorbent is a vacuum suction cup or a vacuum suction nozzle. The suction member is used to evacuate the air extraction passage, and since the air extraction passage is communicated with the vacuum adsorbent, the vacuum adsorbent has a negative pressure adsorption force, thereby adsorbing the processed workpiece.

[0010] In the above-mentioned wafer double-sided thinning device, a second elastic member is provided on the material picker, and the second elastic member includes: a fixed portion, the fixed portion is located at the outer edge of the second elastic member; an elastic portion, the elastic portion is circumferentially surrounded by the fixed portion, and the elastic modulus of the fixed portion is much greater than the elastic modulus of the elastic portion. It can be understood that the fixed portion plays a fixed supporting role, and the elastic modulus of the fixed portion is large enough that even if the elastic portion is deformed by force, it will not drive the fixed portion to deform, and the elastic portion can be convex or concave relative to the fixed portion when deformed.

[0011] In the above-mentioned wafer double-sided thinning device, the material pick-up rack is provided with an annular support portion, the second elastic member is provided on the annular support portion, and a closed cavity is formed between the annular support portion, the second elastic member and the first elastic member. It can be understood that the annular support portion plays a fixed supporting role, and the second elastic member can be deformed by force. When deformed, whether it is convex or concave, it is maintained in a stable position based on the support of the annular support portion, and the closed cavity facilitates the first elastic member to transmit the force to the second elastic member.

[0012] In the above-mentioned wafer double-sided thinning device, the surface of the first plate body facing the second plate body includes: a first area, the first area is used to face the second elastic member; a second area, the second area surrounds the first area in an annular direction; wherein the distribution density of the gas pipes in the first area is greater than the distribution density of the gas pipes in the second area. It can be understood that the gas pipes can be closed by controlling the switch through the valve, and more gas pipes are allocated in the first area, so that when the material picking rack does not extend downward between the first plate body and the second plate body, only part of the gas pipes are opened, and the distribution density of the gas pipes can be configured to be consistent with the distribution density of the gas pipes in the second area, so as to maintain uniform air pressure force on the workpiece to be processed. When the material picking rack extends downward between the first plate body and the second plate body, the first area can face the second elastic member, so that part of the air pressure force is diluted by the second elastic member. Therefore, at this time, more gas pipes can be opened in the first area to compensate for the diluted part of the air pressure force and maintain uniform pressure on the workpiece to be processed.

[0013] In the above wafer double-sided thinning device, a driving mechanism is provided outside the first plate body. The driving mechanism acts on the first plate body to drive the first plate body to move. A pressure sensor is provided in the air extraction flow channel, and the pressure sensor is communicatively connected to the driving mechanism and the air delivery member respectively. Exemplarily, the driving mechanism can be a linear module such as an electric cylinder, a pneumatic cylinder or a hydraulic cylinder. The driving mechanism pushes the first plate body to move linearly, so as to move away from the second plate body to create enough space for the material taking rack to extend between the first plate body and the workpiece to be processed. Moreover, the driving mechanism can obtain the distance between the first plate body and the workpiece to be processed from the moving stroke. By providing a pressure sensor in the air extraction flow channel, the air pressure in the air extraction flow channel can be monitored in real time. Thus, based on the monitored air pressure value and the elastic moduli of the first elastic member and the second elastic member, comprehensive calculation is performed to fit and obtain the deformation degree, or rather the bending degree, of the second elastic member. According to the bending degree of the second elastic member and the distance value between the first plate body and the workpiece to be processed, the gas flow rate required to be output by the air delivery member is calculated, so as to meet the change in the gas flow direction caused by the deformation of the second elastic member, ensure that a sufficient amount of gas returns to the first plate body at the corresponding distance, and further improve the cleaning effect on the first plate surface by using the sufficient amount of gas.

[0014] In the above wafer double-sided thinning device, the width of the material taking rack is less than one-fifth of the diameter of the second plate body, and the thickness of the material taking rack is less than one-fourth of the thickness of the second plate body. It can be understood that by respectively limiting the width and thickness of the material taking rack to relatively small values, when the material taking rack extends into the area between the first plate body and the workpiece to be processed, it can be avoided that a large area of the air flow output by the air delivery pipe is blocked, resulting in possible unstable force on the workpiece to be processed. However, based on this, the present application not only wants to remove the residual silicon powder and debris on the first plate body, but also considers rebounding the air flow output by its own air delivery member, so that both the cleaning of the workpiece to be processed and the cleaning of the first plate body are realized. However, "the area of the material taking rack needs to be as small as possible, otherwise the force on the workpiece during blowing may be unstable" and "rebounding the air flow blown out by the air delivery member" are contradictory. One requires the area of the material taking rack to be as small as possible, while the other requires the area of the material taking rack to be as large as possible for rebounding. Based on this, the flow direction adjusting member of the material taking assembly needs to be coordinated to automatically adjust the force-bearing area of the air flow on the material taking rack to adjust the flow direction. Before the material taking rack sucks the workpiece to be processed, the workpiece to be processed needs to be under stable force. The second elastic member is flat or bends towards the first plate body, guiding the air flow towards the second plate body. When the workpiece to be processed is vacuum adsorbed, the second elastic member is triggered to bend towards the second plate body, increasing the force-bearing area and guiding the air flow towards the first plate body for cleaning. At this time, it is not necessary to ensure the stable force on the workpiece to be processed.

[0015] Another object of the present application is to provide a method for double-sided thinning of wafers, which is applied to the above-mentioned wafer double-sided thinning device, and includes the following steps: obtaining a completion instruction for the completion of the thinning process of the workpiece; based on the completion instruction, starting the gas supply of the gas supply member to push the workpiece into contact with the second plate body, and controlling the first plate body to move away from the workpiece; driving the vacuum suction member to move to abut against the workpiece, and performing a pumping operation on the pumping channel; controlling the pumping channel to switch the second elastic member from the second state to the first state.

[0016] Exemplarily, the workpiece is a wafer. When the wafer thinning is completed, the signal for the first thinning wheel and the second thinning wheel to stop feeding can be used as the completion instruction, or some detection sensors can be used to monitor the thickness of the wafer. For example, after the distance sensors in two directions detect that the wafer thickness reaches the thinning requirement, the completion instruction is issued. The gas supply member can be communicatively connected to the first thinning wheel, the second thinning wheel or other detection sensors. After receiving the completion instruction, the gas supply can be started to act on the wafer. After the wafer is forced to abut against the second plate body and fixed, the first plate body moves away from the wafer to make way for the workpiece of the vacuum suction member. The vacuum suction member moves to abut against the side of the wafer facing away from the second plate body, and the pumping channel pumps air to make the vacuum suction member generate negative pressure to adsorb the wafer. Finally, the pumping volume of the pumping channel is controlled to control the deformation degree of the second elastic member, so as to guide the change of the gas flow direction and blow and clean the first plate body. At the same time, the vacuum suction member rises to pick up the wafer.

[0017] In the above-mentioned method for double-sided thinning of wafers, the following steps are further included: obtaining image information of the surface of the first plate body close to the second plate body; based on the image information, controlling the distance between the first plate body and the second elastic member and / or the deformation state of the second elastic member. Exemplarily, a detection camera can be set to obtain the image information of the surface of the first plate body. Then, according to the image information, it can be judged whether there is silicon powder residue in some areas of the first plate body. By controlling the distance between the first plate body and the second elastic member, the blowing and cleaning effect of the gas can be improved. By controlling the deformation state of the second elastic member, the blowing range after the gas flow direction is adjusted can be expanded.

[0018] Compared with the prior art, the present application has the following beneficial effects:

[0019] In the present application, gas is transported by the gas supply member. The gas is sent out from the gas supply pipe, and then the gas moves towards the workpiece, thereby pushing the workpiece to abut against the second plate body and remain fixed. The force on the workpiece is uniformized, avoiding partial bending and abrasion with silicon powder, and also cleaning the silicon powder on the surface of the workpiece. The pumping channel is used to pump air to trigger the second elastic member to adjust the gas flow direction, and at the same time, the first plate body is blown and cleaned. Subsequently, the first plate body and the second plate body can also be rotated to be the part abutting against the workpiece, so as to facilitate the stable and non-damaging material taking of the material taking component. Description of the Drawings

[0020] Figure 1 It is a schematic diagram of the simple structure during the thinning process of the wafer double-sided thinning device of the present application;

[0021] Figure 2 It is a schematic diagram of the simple structure of the first plate body of the present application;

[0022] Figure 3 It is a schematic diagram of the simple structure when the wafer double-sided thinning device of the present application is about to pick up materials;

[0023] Figure 4 It is the schematic after the first embodiment of the material picking component of the present application participates in the work Figure 1 ;

[0024] Figure 5 It is the schematic after the first embodiment of the material picking component of the present application participates in the work Figure 2 ;

[0025] Figure 6 It is Figure 5 The schematic diagram of the simple structure of the material picking component in

[0026] Figure 7 It is the schematic after the second embodiment of the material picking component of the present application participates in the work Figure 1 ;

[0027] Figure 8 It is the schematic after the second embodiment of the material picking component of the present application participates in the work Figure 2 ;

[0028] Figure 9 It is Figure 8 The schematic diagram of the simple structure of the material picking component in

[0029] Figure 10 It is the flow of the wafer double-sided thinning method of the present application Figure 1 ;

[0030] Figure 11 It is the flow of the wafer double-sided thinning method of the present application Figure 2 ;

[0031] In the figure, 100, bearing member; 200, first plate body; 210, first excavation hole; 220, first zone; 230, second zone; 300, second plate body; 310, second excavation hole; 400, thinning assembly; 410, first thinning grinding wheel; 420, second thinning grinding wheel; 500, air supply assembly; 510, air supply pipe; 520, air supply member; 600, material taking assembly; 610, vacuum adsorption member; 620, flow direction adjustment member; 621, first elastic member; 622, second elastic member; 622a, forward flow guide; 622b, reverse flow guide; 6221, fixing part; 6222, elastic part; 630, material taking rack; 631, air exhaust channel; 632, air exhaust member; 633, annular support; 634, cavity; 635, air pressure sensor; 700, driving mechanism; S, workpiece to be processed. DETAILED DESCRIPTION

[0032] In order to make the above-mentioned purposes, features and advantages of the present application more obvious and easy to understand, the specific embodiments of the present application are described in detail below in conjunction with the accompanying drawings. In the following description, many specific details are set forth to facilitate a full understanding of the present application. However, the present application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar improvements without violating the connotation of the present application, so the present application is not limited by the specific embodiments disclosed below.

[0033] In the description of the present application, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.

[0034] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of the features. In the description of this application, the meaning of "plurality" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined.

[0035] In this application, unless otherwise clearly stipulated and defined, terms such as "installed", "connected", "joined", "fixed", etc. shall be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or integrated; it can be a mechanical connection or an electrical connection; it can be directly connected or indirectly connected through an intermediate medium, and it can be the communication inside two components or the interaction relationship between two components, unless otherwise clearly defined. For those of ordinary skill in the art, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0036] In this application, unless otherwise clearly stipulated and defined, the first feature being "on" or "under" the second feature can be that the first and second features are in direct contact, or the first and second features are indirectly in contact through an intermediate medium. Moreover, the first feature being "above", "over" and "on top of" the second feature can be that the first feature is directly above or obliquely above the second feature, or merely indicates that the first feature has a higher horizontal height than the second feature. The first feature being "under", "below" and "beneath" the second feature can be that the first feature is directly below or obliquely below the second feature, or merely indicates that the first feature has a lower horizontal height than the second feature.

[0037] It should be noted that when an element is referred to as "fixed to" or "disposed on" another element, it can be directly on the other element or there may also be an intermediate element. When an element is considered to be "connected" to another element, it can be directly connected to the other element or there may be an intermediate element at the same time. The terms "vertical", "horizontal", "up", "down", "left", "right" and similar expressions used herein are only for the purpose of illustration and do not represent the only embodiments.

[0038] Please refer to the Figures 1 to 4, the wafer double-sided thinning device of the present application includes a carrier 100, a first plate 200, a second plate 300, a thinning assembly 400, a gas supply assembly 500, and a material taking assembly 600. The carrier 100 is used to radially support the outer peripheral side of the workpiece S to be processed. The first plate 200 is disposed on the first side of the carrier 100, and a first through hole 210 is provided through the first plate 200. The second plate 300 is disposed on the second side of the carrier 100, and a second through hole 310 is provided through the second plate 300. The thinning assembly 400 includes a first thinning grinding wheel 410 and a second thinning grinding wheel 420. The first thinning grinding wheel 410 has a freedom of movement along the first through hole 210, and the second thinning grinding wheel 420 has a freedom of movement along the second through hole 310. The gas supply assembly 500 includes a plurality of gas delivery pipes 510, which are at least disposed on the first plate 200 and face the second plate 300. The gas delivery member 520 communicates with the gas delivery pipes 510 and is used to output gas to push the workpiece S to be processed against the second plate 300. Refer to Figures 4 to 6 , the material taking assembly 600 includes a vacuum suction member 610 and a flow direction adjusting member 620. The vacuum suction member 610 has at least a freedom of movement between the first plate 200 and the second plate 300. A suction flow channel 631 is communicated with the side of the vacuum suction member 610 facing away from the second plate 300. The suction flow channel 631 sucks air to enable the vacuum suction member 610 to adsorb the workpiece S. The flow direction adjusting member 620 includes a first elastic member 621 and a second elastic member 622. The first elastic member 621 is disposed in the suction flow channel 631 and can be deformed in the direction of the second plate 300 under the action of the suction of the suction flow channel 631. The second elastic member 622 is disposed on the first elastic member 621 and faces away from the second plate 300. The second elastic member 622 has a first state of being deformed and bent towards the first plate 200 and a second state of being deformed and bent towards the second plate 300. The second elastic member 622 can be switched between the first state and the second state along with the deformation of the first elastic member 621 to adjust the flow direction of the gas output by the gas delivery member 520.

[0039] Exemplarily, the carrier 100 can be annular to circumferentially carry the workpiece S, or the carrier 100 can be in the shape of multiple wheel bodies or arcs to circumferentially carry the workpiece S in a multi-point manner. The workpiece S in this application is a wafer or a silicon wafer. The first plate body 200 and the second plate body 300 approach each other to clamp both sides of the workpiece S. By respectively drilling holes in the first plate body 200 and the second plate body 300, the first thinning grinding wheel 410 and the second thinning grinding wheel 420 are respectively arranged. The first thinning grinding wheel 410 and the second thinning grinding wheel 420 can be axially fed to thin both sides of the workpiece S. The gas delivery pipe 510 of the gas delivery assembly 500 can be controlled to be opened or closed by a valve. Gas is delivered through the gas delivery member 520, and the gas is sent out from the gas delivery pipe 510. Subsequently, the gas moves towards the workpiece S, thereby pushing the workpiece S to adhere to the second plate body 300 to be fixed, and also cleaning the silicon powder on the surface of the workpiece S. Then, the vacuum suction member 610 of the material taking assembly 600 can move downward and adsorb the workpiece S. The vacuum suction member 610 adsorbs by pumping air through the air extraction channel 631. When the air extraction channel 631 pumps air, the first elastic member 621 is driven to deform by the negative pressure inside the air extraction channel 631. The deformation of the first elastic member 621 drives the deformation of the second elastic member 622. The deformation bending directions of the second elastic member 622 in the first state and the second state are opposite. By using the second elastic member 622 to switch between the first state and the second state, the flow direction of the gas after acting on the second elastic member 622 is adjusted. Moreover, the gas flow area after the second elastic member 622 bends and returns is larger than the original gas flow area, and the blowing range can be wider, so as to ensure that the silicon powder on the first plate surface can be effectively removed. In this application, the method of pushing the workpiece S onto the second plate body 300 by a uniform air flow is used to replace the original method of directly vacuum adsorbing the workpiece S by the second plate body 300, reducing the probability that the workpiece S is damaged by silicon powder due to uneven force. The air extraction channel 631 pumps air to trigger the second elastic member 622 to adjust the gas flow direction, and at the same time cleans the first plate body 200. Subsequently, the first plate body 200 can also be rotated with the second plate body 300 as the part in contact with the workpiece S, so as to facilitate the stable and damage-free material taking of the material taking assembly 600.

[0040] See Figure 3 and Figure 4, in some embodiments, the surface of the first plate body 200 facing the second plate body 300 includes a first region 220 and a second region 230. The first region 220 is used to face the second elastic member 622, and the second region 230 circumferentially surrounds the first region 220. The distribution density of the gas delivery pipes 510 in the first region 220 is greater than that in the second region 230. It can be understood that the gas delivery pipes 510 can be controlled to open and close through valves. By allocating more gas delivery pipes 510 in the first region 220, when the material taking rack 630 does not extend downward between the first plate body 200 and the second plate body 300, only some of the gas delivery pipes 510 are opened, and the distribution density of the gas delivery pipes 510 can be configured to be the same as that in the second region 230, so as to maintain a uniform air pressure acting force on the workpiece S to be processed. When the material taking rack 630 extends downward between the first plate body 200 and the second plate body 300, the first region 220 can face the second elastic member 622, so that part of the air pressure acting force is diluted by the second elastic member 622. Therefore, at this time, more gas delivery pipes 510 can be opened in the first region 220 to compensate for the diluted air pressure acting force and maintain uniform pressing on the workpiece S to be processed.

[0041] In some embodiments, the elastic modulus of the first elastic member 621 is greater than that of the second elastic member 622; as Figure 4 or Figure 7 shown, in the first state, the part of the second elastic member 622 facing the first plate body 200 deforms to form a convex forward flow guiding portion 622a, and the edge of the forward flow guiding portion 622a extends in the direction of the second plate body 300; as Figure 5 or Figure 8 shown, in the second state, the part of the second elastic member 622 facing the first plate body 200 deforms to form a concave reverse flow guiding portion 622b, and the edge of the reverse flow guiding portion 622b extends in the direction of the first plate body 200. It can be understood that the second elastic member 622 in the first state can form a forward flow guiding portion 622a. After the gas output by the gas delivery member 520 is guided by the forward flow guiding portion 622a, its air pressure acting force can indirectly act on the workpiece S to be processed. After the gas passes through the reverse flow guiding portion 622b, its air flow can flow to the first plate body 200 to blow the silicon chips on the first plate body 200.

[0042] See Figure 5 and Figure 6, in some embodiments, a driving mechanism 700 is provided outside the first plate body 200. The driving mechanism 700 acts on the first plate body 200 to drive the first plate body 200 to move. A pressure sensor 635 is provided in the air extraction flow channel 631. The pressure sensor 635 is communicatively connected to the driving mechanism 700 and the air delivery member 520 respectively. Exemplarily, the driving mechanism 700 can be a linear module such as an electric cylinder, a pneumatic cylinder or a hydraulic cylinder. The driving mechanism 700 pushes the first plate body 200 to move linearly, so as to move away from the second plate body 300 to create enough space for the material taking rack 630 to extend between the first plate body 200 and the workpiece S to be processed. And the driving mechanism 700 can obtain the distance between the first plate body 200 and the workpiece S through the moving stroke. By providing the pressure sensor 635 in the air extraction flow channel 631, the air pressure in the air extraction flow channel 631 can be monitored in real time, so as to comprehensively calculate and fit the deformation degree, or the bending degree, of the second elastic member 622 based on the monitored air pressure value and the elastic moduli of the first elastic member 621 and the second elastic member 622. According to the bending degree of the second elastic member 622 and the distance value between the first plate body 200 and the workpiece S, the gas flow rate required to be output by the air delivery member 520 is calculated, so as to meet the change in the gas flow direction caused by the deformation of the second elastic member 622, ensure that a sufficient amount of gas returns to the first plate body 200 at the corresponding distance, and further improve the cleaning effect on the first plate surface by using the sufficient amount of gas.

[0043] As Figure 6 or Figure 9 shown, in some embodiments, the material taking assembly 600 further includes a material taking rack 630. A vacuum adsorbing member 610 is provided on the side of the material taking rack 630 close to the second plate body 300. An air extraction flow channel 631 is formed in the material taking rack 630. An air extraction member 632 is provided on the material taking rack 630. The air extraction member 632 communicates with the air extraction flow channel 631. Exemplarily, the material taking rack 630 is a manipulator, the air extraction member 632 is an air pump, and the vacuum adsorbing member 610 is a vacuum chuck or a vacuum suction nozzle. The air extraction member 632 extracts air from the air extraction flow channel 631. Since the air extraction flow channel 631 is communicated with the vacuum adsorbing member 610, the vacuum adsorbing member 610 has a negative pressure adsorption force to adsorb the workpiece S to be processed.

[0044] See Figure 4 , Figure 5 and Figure 6In some embodiments, the material taking rack 630 is provided with a second elastic member 622, the second elastic member 622 includes a fixed portion 6221 and an elastic portion 6222, the fixed portion 6221 is located at the outer edge of the second elastic member 622, the elastic portion 6222 is circumferentially surrounded by the fixed portion 6221, and the elastic modulus of the fixed portion 6221 is much greater than the elastic modulus of the elastic portion 6222. It can be understood that the fixed portion 6221 plays a fixed supporting role, and the elastic modulus of the fixed portion 6221 is large enough, so that even if the elastic portion 6222 is deformed by force, it will not drive the fixed portion 6221 to deform, and the elastic portion 6222 can be convex or concave relative to the fixed portion 6221 when deformed.

[0045] See also Figure 7 , Figure 8 and Figure 9 In some embodiments, an annular support portion 633 is provided on the material taking frame 630, and a second elastic member 622 is provided on the annular support portion 633, and a closed cavity 634 is formed between the annular support portion 633, the second elastic member 622 and the first elastic member 621. It can be understood that the annular support portion plays a fixed supporting role, and the second elastic member 622 can be deformed by force. When deformed, whether it is convex or concave, it is maintained in a stable position based on the support of the annular support portion, and the closed cavity 634 facilitates the first elastic member 621 to transmit the force to the second elastic member 622.

[0046] In some embodiments, the width of the material pick-up rack 630 is less than one-fifth of the diameter of the second plate body 300, and the thickness of the material pick-up rack 630 is less than one-fourth of the thickness of the second plate body 300. It can be understood that by limiting the width and thickness of the material pick-up rack 630 to relatively small values respectively, when the material pick-up rack 630 extends into the area between the first plate body 200 and the workpiece S to be processed, it can avoid blocking a large area of the air flow output by the air delivery pipe 510, which may cause the force on the workpiece S to be unstable; however, in this application, not only does it want to remove the residual silicon powder and debris on the first plate body 200, but also it considers rebounding the air flow output by its own air delivery member 520 back, so that both the cleaning of the workpiece S and the cleaning of the first plate body 200 are realized; but "the area of the material pick-up rack 630 needs to be as small as possible, otherwise the force on the workpiece S during blowing may be unstable" and "using the air flow blown by the air delivery member 520 to rebound" are contradictory. One requires the area of the material pick-up rack 630 to be as small as possible, while the other requires the area of the material pick-up rack 630 to be as large as possible for rebounding. Based on this, the flow direction adjusting member 620 of the material pick-up assembly 600 is required to automatically adjust the force-bearing area of the air flow on the material pick-up rack 630 to adjust the flow direction. Before the material pick-up rack 630 sucks the workpiece S, the workpiece S needs to be stable in force. The second elastic member 622 is in a flat state or bends towards the first plate body 200, guiding the air flow towards the second plate body 300. When the workpiece S is vacuum adsorbed, the second elastic member 622 is triggered to bend towards the second plate body 300, increasing the force-bearing area and guiding the air flow towards the first plate body 200 for cleaning. At this time, it is not necessary to ensure the stability of the force on the workpiece S.

[0047] See Figure 10 , the wafer double-sided thinning method of this application, which is applied to the wafer double-sided thinning device of this application, includes the following steps:

[0048] S100. Obtain the completion instruction for the thinning process of the workpiece S to be processed;

[0049] S200. Based on the completion instruction, start the air delivery member 520 to deliver air to push the workpiece S into contact with the second plate body 300, and control the first plate body 200 to move away from the workpiece S;

[0050] S300. Drive the vacuum suction member 610 to move to contact with the workpiece S, and perform a pumping operation on the pumping flow channel 631;

[0051] S400. Control the pumping flow channel 631 to switch the second elastic member 622 from the second state to the first state.

[0052] Exemplarily, the workpiece S is a wafer. When wafer thinning is completed, a signal from the first thinning grinding wheel 410 and the second thinning grinding wheel 420 to stop feeding can be used as a completion instruction. Alternatively, the wafer thickness can be monitored by some detection sensors, such as when distance sensors in two directions detect that the wafer thickness reaches the thinning requirement, a completion instruction is issued. The gas delivery member 520 can be connected to the first thinning grinding wheel 410, the second thinning grinding wheel 420 or other detection sensors in communication, so that after receiving the completion instruction, the gas delivery can be started to act on the wafer, and the wafer is forced to lean against the second plate 300 and fixed, and then the first plate 200 moves away from the wafer to make way, giving the vacuum adsorbent 610 a workpiece, and the vacuum adsorbent 610 moves to the side of the wafer away from the second plate 300 to abut against it, and the air extraction channel 631 is exhausted to make the vacuum adsorbent 610 generate negative pressure to adsorb the wafer, and finally, the air extraction amount of the air extraction channel 631 is controlled to control the deformation degree of the second elastic member 622, thereby guiding the gas flow direction to change, and the first plate 200 is purged and cleaned. At the same time, the vacuum adsorbent 610 rises to take away the wafer.

[0053] See also Figure 11 , in some embodiments, further comprising the following steps:

[0054] S500, acquiring image information of a surface of the first plate body 200 close to the second plate body 300;

[0055] S600, based on the image information, control the distance between the first plate 200 and the second elastic member 622 and / or the deformation state of the second elastic member 622. Exemplarily, a detection camera may be set to obtain image information of the surface of the first plate 200, so as to determine whether there is silicon powder residue in certain areas on the first plate 200 according to the image information, and by controlling the distance between the first plate 200 and the second elastic member 622, the purging cleaning effect of the gas may be improved, and by controlling the deformation state of the second elastic member 622, the purging range after the gas flow direction is adjusted may be expanded.

[0056] Beneficial effects:

[0057] This application conveys gas through the gas conveying member 520. The gas is sent out from the gas pipeline 510, and then the gas moves in the direction of the workpiece S to be processed, thereby pushing the workpiece S to be processed against the second plate body 300 to be fixed. The force on the workpiece S to be processed is equalized, avoiding partial bending and abrasion with silicon powder, and also cleaning the silicon powder on the surface of the workpiece S to be processed. The gas flow direction is adjusted by triggering the second elastic member 622 by pumping air through the air extraction channel 631. At the same time, the first plate body 200 is purged and cleaned. Subsequently, the first plate body 200 can also be rotated with the second plate body 300 as the part in contact with the workpiece S to be processed, so as to facilitate the stable and non-damaging material taking by the material taking assembly 600; by distributing more gas pipelines 510 in the first area 220, when the material taking frame 630 does not extend downward between the first plate body 200 and the second plate body 300, only part of the gas pipelines 510 are opened, and the distribution density of the gas pipelines 510 can be configured to be the same as the distribution density of the gas pipelines 510 in the second area 230, so as to maintain a uniform air pressure acting force on the workpiece S to be processed. When the material taking frame 630 extends downward between the first plate body 200 and the second plate body 300, the first area 220 can be directly opposite to the second elastic member 622, so that part of the air pressure acting force is diluted by the second elastic member 622. Therefore, at this time, more gas pipelines 510 can be opened in the first area 220 to compensate for the diluted air pressure acting force and maintain uniform pressure on the workpiece S to be processed; by arranging a pressure sensor 635 in the air extraction channel 631, the air pressure in the air extraction channel 631 can be monitored in real time, and based on the monitored air pressure value, the elastic moduli of the first elastic member 621 and the second elastic member 622, the deformation degree or the bending degree of the second elastic member 622 can be obtained by comprehensive calculation and fitting. According to the bending degree of the second elastic member 622 and the distance value between the first plate body 200 and the workpiece S to be processed, the gas flow rate required to be output by the gas conveying member 520 can be calculated, so as to meet the gas flow direction change caused by the deformation of the second elastic member 622, ensure that a sufficient amount of gas returns to the first plate body 200 at the corresponding distance, and further improve the cleaning effect on the first plate surface by using a sufficient amount of gas.

[0058] The specific embodiments described herein are merely illustrative of the spirit of this application. Those skilled in the art to which this application pertains can make various modifications or supplements to the described specific embodiments or use similar methods for substitution, but will not deviate from the spirit of this application or exceed the scope defined by the appended claims.

Claims

1. A wafer double-sided thinning device, characterized in that, Comprising: A carrier (100) for supporting a workpiece to be processed; A first plate body (200) disposed on a first side of the carrier (100); A second plate body (300) disposed on a second side of the carrier (100); An air supply assembly (500), the air supply assembly (500) comprising: A plurality of air delivery pipes (510) disposed at least on the first plate body (200), the air delivery pipes (510) facing the second plate body (300); An air delivery member (520) communicating with the air delivery pipes (510) for outputting gas; and A material taking assembly (600), the material taking assembly (600) comprising: A vacuum suction member (610) having at least a degree of freedom of movement between the first plate body (200) and the second plate body (300), a suction air flow path (631) communicating with a side of the vacuum suction member (610) facing away from the second plate body (300), and the suction air flow path (631) sucking air to enable the vacuum suction member (610) to adsorb the workpiece to be processed; A flow direction adjusting member (620), the flow direction adjusting member (620) comprising: A first elastic member (621) disposed in the suction air flow path (631) and deformable in the direction of the second plate body (300) under the action of the suction of the suction air flow path (631); A second elastic member (622) disposed on the first elastic member (621) and facing away from the second plate body (300), the second elastic member (622) having a first state of deforming and bending towards the first plate body (200) and a second state of deforming and bending towards the second plate body (300), and the second elastic member (622) being capable of switching between the first state and the second state as the first elastic member (621) deforms to adjust the flow direction of the gas output by the air delivery member (520).

2. The wafer double-sided thinning device according to claim 1, wherein The elastic modulus of the first elastic member (621) is greater than the elastic modulus of the second elastic member (622); In the first state, a portion of the second elastic member (622) facing the first plate body (200) deforms to form a convex forward flow guiding portion (622a), and the edge of the forward flow guiding portion (622a) extends towards the second plate body (300); In the second state, a portion of the second elastic member (622) facing the first plate body (200) deforms to form a concave reverse flow guiding portion (622b), and the edge of the reverse flow guiding portion (622b) extends towards the first plate body (200).

3. The wafer double-sided thinning device according to claim 1, wherein, The material taking component (600) further includes a material taking frame (630). The vacuum suction component (610) is provided on one side of the material taking frame (630) close to the second plate body (300). An air extraction flow channel (631) is formed in the material taking frame (630). An air extraction member (632) is provided on the material taking frame (630), and the air extraction member (632) communicates with the air extraction flow channel (631).

4. The wafer double-sided thinning device according to claim 3, characterized in that A second elastic member (622) is provided on the material taking frame (630). The second elastic member (622) includes: A fixing portion (6221) located at the outer edge of the second elastic member (622); An elastic portion (6222) circumferentially surrounded by the fixing portion (6221). The elastic modulus of the fixing portion (6221) is much greater than that of the elastic portion (6222).

5. The wafer double-sided thinning device according to claim 3, characterized in that, An annular support portion (633) is provided on the material taking frame (630). The second elastic member (622) is arranged on the annular support portion (633). A closed cavity (634) is formed among the annular support portion (633), the second elastic member (622), and the first elastic member (621).

6. The wafer double-sided thinning device according to claim 1, wherein The surface of the first plate body (200) facing the second plate body (300) includes: A first area (220) for facing the second elastic member (622); A second area (230) circumferentially surrounding the first area (220); Wherein, the distribution density of the gas delivery pipes (510) in the first area (220) is greater than that in the second area (230).

7. The wafer double-sided thinning device according to claim 1, wherein, A driving mechanism (700) is provided outside the first plate body (200). The driving mechanism (700) acts on the first plate body (200) to drive the first plate body (200) to move. A pressure sensor (635) is provided in the air extraction flow channel (631), and the pressure sensor (635) is communicatively connected to the driving mechanism (700) and the gas delivery member (520) respectively.

8. The wafer double-sided thinning device according to claim 3, wherein, The width of the material taking frame (630) is less than one fifth of the diameter of the second plate body (300), and the thickness of the material taking frame (630) is less than one fourth of the thickness of the second plate body (300).

9. A method for double-sided thinning of a wafer, applied to the wafer double-sided thinning device according to any one of claims 1-8, characterized in that, Including the following steps: Obtain a completion instruction for the thinning process of the workpiece to be processed; Based on the completion instruction, start the gas delivery of the gas delivery member (520) to push the workpiece to be processed into contact with the second plate body (300), and control the first plate body (200) to move away from the workpiece to be processed; Drive the vacuum suction component (610) to move into contact with the workpiece to be processed, and perform an air extraction operation on the air extraction flow channel (631); Control the air extraction flow channel (631) to switch the second elastic member (622) from the second state to the first state.

10. The wafer double-sided thinning method according to claim 9, characterized in that, It further includes the following steps: Obtain the image information of the surface of the first plate body (200) close to the second plate body (300); Based on the image information, control the distance between the first plate body (200) and the second elastic member (622) and / or the deformation state of the second elastic member (622).

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