Self-adaptive polishing solution applicable to processing of high-hardness semiconductor material and preparation method of self-adaptive polishing solution

Abstract

The invention discloses a self-adaptive polishing solution suitable for high-hardness semiconductor material processing and a preparation method, and belongs to the field of chemical mechanical polishing, the polishing solution comprises the following components by mass: 15%-35% of an abrasive, 0.15%-1.75% of a dispersant, 0.15%-1.75% of a corrosion inhibitor, 0.015%-0.35% of an oxidant, 0.075%-0.7% of a pH regulator, and the balance of water; the pH value of the liquid can be adjusted according to the requirements in the machining process so as to achieve extension or contraction of a polymer chain segment, so that the surface characteristics of abrasive particles are dynamically adjusted, and when the pH value is high, the polymer chain segment extends, and the grinding force is reduced; when the pH value is low, the polymer chain segment shrinks, and the grinding force is increased; during polishing, the initial polishing stage is carried out in a low-pH environment, a polymer chain segment shrinks, the grinding force is increased, and the polishing efficiency is improved; the polishing is carried out in a high-pH environment at the later stage, polymer chain segments extend, the grinding force is reduced, the polishing quality is improved, the polishing time is shortened, the process cost is reduced, and the overall machining effect is improved.

Description

Technical Field

[0001] The invention belongs to the technical field of chemical mechanical polishing, and more specifically, relates to an adaptive polishing liquid suitable for processing high-hardness semiconductor materials and a preparation method thereof. Background Art

[0002] As the semiconductor industry's demand for high-performance materials continues to increase, high-hardness semiconductor materials such as silicon carbide (SiC) and gallium nitride (GaN) have gradually become mainstream; however, the chemical mechanical polishing process of these materials has problems such as low removal rate and severe surface damage. Especially when facing extremely hard semiconductor materials such as silicon carbide, traditional polishing methods are difficult to meet processing requirements. In the existing technology, chemical mechanical polishing methods are usually used to remove material surfaces using liquids containing abrasive particles and oxidants. Common abrasive particles include aluminum oxide, zirconium oxide, silicon carbide, etc., but these abrasive particles have a high surface hardness and are prone to damage the material surface during the polishing process; Some existing patent technologies propose to change the solvent to adjust the surface properties of abrasive particles to improve the polishing effect. For example, patent CN111518478B proposes a silicon carbide polishing liquid, which uses a non-aqueous solvent instead of water, thereby avoiding the problem that the reaction activation energy, coordination performance and redox potential of each component in the polishing liquid are all subject to the constraints of aqueous solutions; however, these technologies often fail to solve the problem of dynamic changes of abrasive particles under different pH environments, and the means for adjusting the surface of abrasive particles are relatively single, lacking adaptive control functions; therefore, it is urgent to develop a new type of adaptive polishing liquid that can automatically adjust the surface behavior of abrasives under different processing conditions, thereby achieving more efficient and low-damage processing of high-hardness semiconductor materials. Summary of the invention

[0003] The technical problem to be solved by the present invention is to provide an adaptive polishing liquid and a preparation method suitable for processing high-hardness semiconductor materials, which can meet the requirements of automatically adjusting the surface behavior of abrasives, reducing damage and improving the surface quality of materials.

[0004] A method for preparing an adaptive polishing liquid suitable for processing high-hardness semiconductor materials of the present invention comprises the following steps: Step 1: The abrasive particles are pickled to remove surface impurities, and treated with oxygen ions to expose a large number of hydroxyl groups, increase the hydrophilicity of the abrasive surface, and provide reaction sites for subsequent grafting reactions; Step 2: using silanization treatment, adding a silane coupling agent containing an initiating group to the abrasive described in step 1 and stirring, so that the silane coupling agent containing an initiating group is grafted to the surface of the abrasive particles, the reaction conditions are a temperature of 50-150° C., a stirring speed of 300-600 r / min, and a time of 1-3 hours. After the reaction, the unreacted silane coupling agent is removed by washing with deionized water to obtain surface-activated abrasive particles; Step 3: using an atom transfer radical polymerization method, adding a pH-sensitive monomer to the surface-activated abrasive particles described in step 2, and adding deionized water, a catalyst and an initiator to carry out a polymerization reaction at 50-100° C. for 1-10 hours, wherein the initiator reacts with the pH-sensitive monomer to graft pH-sensitive polymer segments on the surface of the abrasive particles, and filtering out the abrasive particles grafted with the pH-sensitive polymer segments; Step 4: Mix the abrasive particles grafted with pH-sensitive polymer segments described in step 3 with a dispersant, a corrosion inhibitor, an oxidant, a pH regulator and a solvent and stir for 2-8 hours at a stirring speed of 300-800 r / min to obtain an adaptive polishing liquid.

[0005] The preparation method is simple, the material cost is low, and it is suitable for large-scale production.

[0006] As a further improvement of the present invention, the abrasive particles in step 1 are one or more of aluminum oxide, zirconium oxide, silicon carbide, boron carbide or silicon nitride, and have a particle size of 20-500 nm.

[0007] As a further improvement of the present invention, the pickling in step 1 uses one of dilute sulfuric acid and dilute nitric acid, with a concentration of 1M and a mass of 5%-20% of the mass of the abrasive particles.

[0008] As a further improvement of the present invention, the silane coupling agent containing an initiating group in step 2 is one of vinyl triethoxy silane (A151), vinyl trimethoxy silane (A171), vinyl tri (β-methoxyethoxy) silane (A172) or γ-glycidyl ether propyl trimethoxy silane (OFS-6040), and the mass of the silane coupling agent is 2%-10% of the mass of the abrasive particles.

[0009] As a further improvement of the present invention, the pH sensitive monomer described in step three is one of acrylic acid, methacrylic acid, N,N-dimethylaminoethyl methacrylate (DMAEMA) or itaconic acid, and the added mass is 1%-5% of the mass of the abrasive particles.

[0010] As a further improvement of the present invention, the catalyst described in step three is one of copper bromide and copper chloride, and the added mass is 0.05%-0.5% of the mass of the abrasive particles; the initiator is one of benzyl bromide and ethylbenzene bromide, and the added mass is 0.5%-2% of the mass of the abrasive particles.

[0011] As a further improvement of the present invention, the dispersant described in step 4 is one of polyethyleneimine, polyethylene glycol or sodium polyacrylate, and the added mass is 1%-5% of the mass of the abrasive particles; the corrosion inhibitor is one of phosphate, benzotriazole or 1,2,4-triazole, and the added mass is 1%-5% of the mass of the abrasive particles; the oxidant is one of hydroxylamine, hydrogen peroxide, potassium permanganate, chromic acid or perchromic acid, and the added mass is 0.1%-1% of the mass of the abrasive particles; the pH adjuster is one of nitric acid, acetic acid, ammonia water or potassium hydroxide, and the added mass is 0.5%-2% of the mass of the abrasive particles; the solvent is deionized water, and the added mass is 200%-500% of the mass of the abrasive particles.

[0012] As a further improvement of the present invention, the components in step 4 are calculated by mass percentage as follows: abrasive is 15%-35%, dispersant is 0.15%-1.75%, corrosion inhibitor is 0.15%-1.75%, oxidant is 0.015%-0.35%, pH adjuster is 0.075%-0.7%, and the balance is water.

[0013] The polishing liquid prepared by the preparation method of the adaptive polishing liquid suitable for processing high-hardness semiconductor materials comprises components by mass percentage, including abrasive, dispersant, corrosion inhibitor, oxidant and pH regulator, and the balance is water.

[0014] As a further improvement of the present invention, the hardness of the abrasive particles with pH-sensitive polymer segments grafted on the surface in the polishing liquid is less than the hardness of the abrasive particles without pH-sensitive polymer segments, thereby reducing scratches and surface roughness to improve polishing quality.

[0015] As a further improvement of the present invention, the pH of the liquid can be adjusted according to the needs during the processing to achieve the extension or contraction of the polymer chain segments, thereby dynamically adjusting the surface properties of the abrasive particles; specifically, when the pH value is high, the polymer chain segments extend and the grinding force decreases; when the pH value is low, the polymer chain segments contract and the grinding force increases. The abrasive surface properties can be automatically adjusted according to the changes in the pH value. This adaptive adjustment can avoid cracks or scratches on the surface of high-hardness materials such as silicon carbide caused by excessive grinding forces, reduce surface damage, and improve surface quality.

[0016] As a further improvement of the present invention, when polishing is performed, in the initial stage of polishing, it is carried out in a lower pH environment, the polymer chain segments shrink, the grinding force is increased, and the polishing efficiency is improved; in the later stage of polishing, it is carried out in a higher pH environment, the polymer chain segments stretch, the grinding force is reduced, the polishing quality is improved, the polishing time and process cost are reduced, and the overall processing effect is improved.

[0017] As a further improvement of the present invention, due to the adaptive characteristics of the polishing liquid, it can automatically optimize the behavior of the abrasive particles according to different processing conditions (pH changes), so that the technology can adapt to the processing requirements of a variety of materials with different hardness and have higher processing flexibility.

[0018] Compared with the prior art, the beneficial effects of the present invention are: dynamically regulating the grinding force and reducing surface damage: by grafting pH-sensitive polymer segments on the surface of the abrasive particles, the polishing liquid can automatically adjust the surface characteristics of the abrasive according to the change of pH value. This adaptive adjustment can effectively avoid surface cracks or scratches on high-hardness materials such as silicon carbide caused by excessive grinding force, reduce surface damage, and improve surface quality; the hardness of the abrasive particles with pH-sensitive polymer segments grafted on the surface in the polishing liquid is less than the hardness of the abrasive particles without pH-sensitive polymer segments, which reduces the generation of scratches and reduces surface roughness to improve the polishing quality; improve the removal rate and processing efficiency, and by adjusting the surface characteristics of the abrasive particles, the material removal efficiency is improved while ensuring low damage; the behavior of the abrasive particles can be automatically optimized according to different processing conditions (pH changes), so that the technology can adapt to the processing needs of a variety of materials with different hardness and has higher processing flexibility; the preparation method is simple, the material cost is low, and it is suitable for large-scale production. DETAILED DESCRIPTION

[0019] The present invention is further described below by examples and comparative examples and polishing data of polishing liquids prepared by the examples and comparative examples. It should be understood that these examples are used to illustrate the basic principles, main features and advantages of the present invention, and the present invention is not limited to the scope of the following examples; the implementation conditions used in the examples can be further adjusted according to specific requirements, and the implementation conditions not specified are usually the conditions in conventional experiments.

[0020] Example 1

[0021] Step 1: 100 kg of aluminum oxide abrasive particles with a particle size of 100 nm and 10 kg of dilute sulfuric acid with a concentration of 1 M are mixed for pickling treatment; Step 2: Add 5 kg of vinyl triethoxysilane (A151) to the above abrasive and stir at 80 ° C for 2 hours at a stirring speed of 400 r / min; Step 3: adding 2 kg of acrylic acid, 70 kg of deionized water, 0.1 kg of copper bromide, and 1 kg of benzyl bromide to the surface-activated abrasive particles described in step 2 to carry out a polymerization reaction at 60° C. for 5 h to obtain abrasive particles grafted with pH-sensitive polymer segments; Step 4: Add 2kg polyethyleneimine, 2kg phosphate, 0.5kg hydrogen peroxide, 1kg nitric acid, and 300kg deionized water to the abrasive particles grafted with the pH-sensitive polymer segments, and mix them at a stirring speed of 500r / min for 4h to form an adaptive polishing solution for standby use.

[0022] Example 2

[0023] Step 1: 100 kg of 200 nm zirconium oxide abrasive particles and 15 kg of 1 M dilute sulfuric acid were mixed for pickling treatment; Step 2: Add 6 kg vinyl trimethoxysilane (A171) to the above abrasive and stir, react at 90 ° C for 1 hour, and the stirring speed is 500 r / min; Step 3: adding 3 kg of methacrylic acid, 80 kg of deionized water, 0.1 kg of copper chloride, and 1 kg of ethylbenzene bromide to the surface-activated abrasive particles described in step 2 to carry out a polymerization reaction at 70° C. for 6 hours to obtain abrasive particles grafted with pH-sensitive polymer segments; Step 4: Add 3kg polyethyleneimine, 3kg phosphate, 0.5kg hydroxylamine, 0.5kg acetic acid and 300kg deionized water to the abrasive particles grafted with the pH sensitive polymer segments, stir at a speed of 600r / min for 5h to form an adaptive polishing solution for standby use.

[0024] Example 3

[0025] Step 1: 100 kg of silicon carbide abrasive particles with a particle size of 50 nm and 10 kg of dilute sulfuric acid with a concentration of 1 M are mixed for pickling treatment; Step 2: Add 8 kg vinyl tri(β-methoxyethoxy)silane (A172) to the above abrasive and stir, react at 70°C for 2 hours, and stir at a speed of 500 r / min; Step 3: adding 2 kg of N, N-dimethylaminoethyl methacrylate (DMAEMA), 60 kg of deionized water, 0.2 kg of copper chloride, and 1.5 kg of ethylbenzene bromide to the surface activated abrasive particles described in step 2 for polymerization reaction at 80° C. for 8 h to obtain abrasive particles grafted with pH sensitive polymer segments; Step 4: Add 4 kg polyethyleneimine, 4 kg phosphate, 0.6 kg hydroxylamine, 0.5 kg ammonia water and 400 kg deionized water to the abrasive particles grafted with the pH sensitive polymer segments, stir at a speed of 600 r / min for 6 hours to form an adaptive polishing solution for standby use.

[0026] Example 4

[0027] Step 1: 100 kg of boron carbide abrasive particles with a particle size of 250 nm and 10 kg of dilute nitric acid with a concentration of 1 M are mixed for pickling treatment; Step 2: Add 10 kg of γ-glycidyl ether propyl trimethoxysilane (OFS-6040) to the above abrasive and stir, react at 100 ° C for 2 hours, and the stirring speed is 500 r / min; Step 3: adding 3 kg of itaconic acid, 70 kg of deionized water, 0.3 kg of copper chloride, and 1.5 kg of ethylbenzene bromide to the surface-activated abrasive particles described in step 2 to carry out a polymerization reaction at 80° C. for 6 hours to obtain abrasive particles grafted with pH-sensitive polymer segments; Step 4: Add 3kg polyethylene glycol, 3kg benzotriazole, 0.5kg potassium permanganate, 0.5kg potassium hydroxide and 400kg deionized water to the abrasive particles grafted with the pH sensitive polymer segments, stir at a speed of 500r / min for 7h to form an adaptive polishing solution for standby use.

[0028] Example 5

[0029] Step 1: 100 kg of silicon nitride abrasive particles with a particle size of 200 nm and 10 kg of dilute sulfuric acid with a concentration of 1 M are mixed for pickling treatment; Step 2: Add 8 kg of vinyl triethoxysilane (A151) to the above abrasive and stir, react at 80°C for 2 hours, and stir at a speed of 500 r / min; Step 3: adding 2 kg of acrylic acid, 80 kg of deionized water, 0.1 kg of copper bromide, and 1.5 kg of benzyl bromide to the surface-activated abrasive particles described in step 2 to carry out a polymerization reaction at 60° C. for 5 h to obtain abrasive particles grafted with pH-sensitive polymer segments; Step 4: Add 2kg polyethyleneimine, 2kg phosphate, 0.5kg hydrogen peroxide, 1kg acetic acid, and 300kg deionized water to the abrasive particles grafted with the pH-sensitive polymer segments, and mix them at a stirring speed of 600r / min for 5h to form an adaptive polishing solution for standby use.

[0030] Furthermore, during the polishing process, when half of the polishing time has passed, 2 kg of ammonia water is added to the polishing liquid to adjust the pH, and then the polishing is continued.

[0031] Comparative Example 1 Alumina abrasive particles without pH-sensitive polymer segment grafting were directly used, and the remaining raw materials and preparation process were the same as those in Example 1.

[0032] Comparative Example 2 No dispersant polyethyleneimine was added, and the remaining raw materials and preparation process were the same as those in Example 2.

[0033] Comparative Example 3 No corrosion inhibitor phosphate was added, and the remaining raw materials and preparation process were the same as those in Example 3.

[0034] Comparative Example 4 No oxidizing agent potassium permanganate was added, and the remaining raw materials and preparation process were the same as those in Example 4.

[0035] Comparative Example 5 The raw materials and preparation process are the same as those of Example 5, except that during the polishing process, in Comparative Example 5, no ammonia water is added to adjust the pH after half of the polishing time.

[0036] The polishing liquid prepared in each embodiment and comparative example was used to polish a square silicon carbide with a side length of 5 cm. The specific polishing and cleaning conditions were as follows: The 13BF-3M6P-G polishing machine provided by Suzhou Bohongyuan Machinery Manufacturing Co., Ltd. has a polishing load of 800g / cm2, a plate speed of 45rpm, a line speed of 80m / min, a polishing time of 3h, and a polishing liquid supply rate of 15mL / min; The polished silicon carbide was cleaned for 1 hour using a WT-09070WS ultrasonic cleaner provided by Hangzhou Wotai Optoelectronics Technology Co., Ltd. The ultrasonic frequency was 60KHz and the power was 1000W. The cleaning effect was visually inspected by irradiating the silicon wafer with a strong light, and the results were expressed as "excellent, good, or poor". The silicon wafers after cleaning and natural drying were treated at 400°C for 10 minutes, and the number of scratches was observed using a Baumer XF100M03W10EP instrument; The polishing speed was calculated by the mass change of silicon carbide before and after polishing. The surface roughness of the silicon wafer was tested using the Mitutoyo portable surface roughness meter SJ-210. After the polishing liquid was left to stand for 48 hours, if the amount of precipitation was less than 2%, it was evaluated as "excellent", if it was greater than 2% and less than 15%, it was evaluated as "good", and if it was greater than 15%, it was evaluated as "poor".

[0037] The polishing effects of the polishing liquid are shown in Table 1. ; It can be seen from the polishing results of Example 1 and Comparative Example 1 that the surface roughness increases after polishing the abrasive without grafted pH sensitive polymer segments. Since the hardness of the abrasive particles without grafted pH sensitive polymer segments is greater than the hardness of the abrasive particles with grafted pH sensitive polymer segments, and the surface properties of the abrasive cannot be automatically adjusted according to changes in pH value, the hardness of the abrasive particles does not change, resulting in high hardness polishing, and the polishing speed is consistent. Although the polishing speed is faster than that of Example 1, it also leads to an increase in the number of scratches and a worse polishing effect.

[0038] It can be seen from the polishing results of Example 2 and Comparative Example 2 that the dispersibility of the polishing liquid without dispersant becomes significantly worse after being placed for 48 hours, which shows that the dispersant has the effect of improving the dispersibility of the polishing liquid.

[0039] It can be seen from the polishing results of Example 3 and Comparative Example 3 that the polishing liquid without adding corrosion inhibitor causes the surface roughness to be significantly increased; the corrosion inhibitor can be embedded in the microscopic recessed areas on the workpiece surface, thereby improving the overall flatness of the workpiece surface.

[0040] During polishing, pretreatment with the addition of a corrosion inhibitor helps reduce uneven erosion of the workpiece surface by the polishing fluid. If the polishing fluid is applied directly without using a corrosion inhibitor, the polishing fluid will accumulate in the microscopic depressions on the surface of the silicon wafer, causing these areas to be unevenly eroded, which in turn affects the polishing effect of the workpiece surface and prevents it from achieving the ideal flat state.

[0041] It can be seen from the polishing results of Example 4 and Comparative Example 4 that the polishing speed without the addition of an oxidant is significantly slower and the number of scratches is also increased; the oxidant can cause a chemical reaction on the workpiece surface to generate a relatively soft oxide layer, which is easier to be removed by the abrasive particles in the polishing liquid than the original material; in addition, the oxidant also helps to homogenize the chemical activity of the workpiece surface and reduce the number of scratches that may be generated during the polishing process.

[0042] It can be seen from the polishing results of Example 5 and Comparative Example 5 that if the pH is not adjusted, the polishing speed will be faster, but the surface roughness will be significantly increased, and the number of scratches will also increase; when the surface characteristics of the abrasive remain unchanged, the abrasive always maintains the same grinding force, which will cause the material to be more susceptible to surface damage as the polishing time increases; by adjusting the pH, the initial polishing can be carried out in a lower pH environment, the polymer chain segments shrink to increase the grinding force, and the polishing efficiency is improved; the later polishing is carried out in a higher pH environment, the polymer chain segments stretch to reduce the grinding force, which can avoid surface damage to the material, thereby increasing the polishing amount.

Claims

1. A method for preparing an adaptive polishing liquid suitable for processing high-hardness semiconductor materials, characterized in that: The following steps are involved: Step 1: The abrasive particles are pickled to remove surface impurities, and then treated with oxygen plasma to expose a large number of hydroxyl groups to obtain abrasive particles to be grafted; Step 2: using silanization treatment, adding a silane coupling agent containing an initiating group to the abrasive particles to be grafted in step 1, so that the silane coupling agent containing an initiating group is grafted to the surface of the abrasive particles, and after the reaction, removing the unreacted silane coupling agent by washing with deionized water to obtain surface-activated abrasive particles; Step 3: using an atom transfer radical polymerization method, adding a pH-sensitive monomer to the surface-activated abrasive particles described in step 2, and adding deionized water, a catalyst and an initiator to carry out a polymerization reaction, wherein the initiator reacts with the pH-sensitive monomer to graft pH-sensitive polymer segments on the surface of the abrasive particles, and filtering out the abrasive particles grafted with the pH-sensitive polymer segments; Step 4: Mix and stir the abrasive particles grafted with pH-sensitive polymer segments described in step 3 with a dispersant, a corrosion inhibitor, an oxidant, a pH regulator and a solvent to obtain an adaptive polishing liquid.

2. The method for preparing an adaptive polishing liquid suitable for processing high-hardness semiconductor materials according to claim 1, characterized in that: Step 1: The abrasive particles are one or more of aluminum oxide, zirconium oxide, silicon carbide, boron carbide or silicon nitride, and the particle size is 20-500 nm.

3. The method for preparing an adaptive polishing liquid suitable for processing high-hardness semiconductor materials according to claim 1, characterized in that: The pickling in step 1 uses one of dilute sulfuric acid and dilute nitric acid, with a concentration of 1M and a mass of 5%-20% of the mass of the abrasive particles.

4. The method for preparing an adaptive polishing liquid suitable for processing high-hardness semiconductor materials according to claim 1, characterized in that: The silane coupling agent containing an initiating group in step 2 is one of vinyl triethoxy silane (A151), vinyl trimethoxy silane (A171), vinyl tri (β-methoxyethoxy) silane (A172) or γ-glycidyl ether propyl trimethoxy silane (OFS-6040), and the mass of the silane coupling agent is 2%-10% of the mass of the abrasive particles.

5. The method for preparing an adaptive polishing liquid suitable for processing high-hardness semiconductor materials according to claim 1, characterized in that: The pH sensitive monomer described in step three is one of acrylic acid, methacrylic acid, N,N-dimethylaminoethyl methacrylate (DMAEMA) or itaconic acid, and the added mass is 1%-5% of the mass of the abrasive particles.

6. The method for preparing an adaptive polishing liquid suitable for processing high-hardness semiconductor materials according to claim 1, characterized in that: The catalyst in step 4 is one of copper bromide and copper chloride, and the added mass is 0.05%-0.5% of the mass of the abrasive particles; the initiator is one of benzyl bromide and ethylbenzene bromide, and the added mass is 0.5%-2% of the mass of the abrasive particles.

7. The method for preparing an adaptive polishing liquid suitable for processing high-hardness semiconductor materials according to claim 1, characterized in that: The dispersant described in step 4 is one of polyethyleneimine, polyethylene glycol or sodium polyacrylate, and the added mass is 1%-5% of the mass of the abrasive particles; the corrosion inhibitor is one of phosphate, benzotriazole or 1,2,4-triazole, and the added mass is 1%-5% of the mass of the abrasive particles; the oxidant is one of hydroxylamine, hydrogen peroxide, potassium permanganate, chromic acid or perchromic acid, and the added mass is 0.1%-1% of the mass of the abrasive particles; the pH adjuster is one of nitric acid, acetic acid, ammonia water or potassium hydroxide, and the added mass is 0.5%-2% of the mass of the abrasive particles; the solvent is deionized water, and the added mass is 200%-500% of the mass of the abrasive particles.

8. The method for preparing an adaptive polishing liquid suitable for processing high-hardness semiconductor materials according to claim 1, characterized in that: The components in step 4 are calculated by mass percentage as follows: abrasive is 15%-35%, dispersant is 0.15%-1.75%, corrosion inhibitor is 0.15%-1.75%, oxidant is 0.015%-0.35%, pH adjuster is 0.075%-0.7%, and the balance is water.

9. The method for preparing an adaptive polishing liquid suitable for processing high-hardness semiconductor materials according to claim 1, characterized in that: The silanization treatment described in step 2 is carried out at 50-150°C, with a stirring time of 1-3h and a stirring speed of 300-600r / min; the polymerization reaction temperature described in step 3 is 50-100°C, and the reaction time is 1-10h; the mixing and stirring time of step 4 is 2-8h, and the stirring speed is 300-800r / min.

10. The polishing liquid prepared by the method for preparing an adaptive polishing liquid suitable for processing high-hardness semiconductor materials according to any one of claims 1 to 9.