Probe card testing method

Abstract

The embodiment of the invention discloses a probe card testing method. The probe card testing method comprises the following steps that S1, a detection piece is installed at a set position on the back face of a probe card; s2, enabling the front surface of the probe card to face downwards, and fixedly mounting the probe card on a first fixing tool; s3, mounting the wafer on a second fixing tool; s4, the moving mechanism drives the second fixing tool to move, and enables the grinding needle area on the wafer to abut against all the needle points on the probe card; s5, polishing a needle point on the probe card; s6, adjusting a temperature control structure on the second fixing tool to change the temperature of the wafer; s7, the moving mechanism upwards lifts the second fixing tool, and the detection piece and the image acquisition machine carry out data acquisition; and S8, analyzing the data. According to the embodiment of the invention, the wafer on the second fixing tool can be driven to complete the needle grinding action through the moving mechanism, and the temperature control structure can be used for cooling and heating the wafer, so that the test work of the wafer under the three-temperature condition is realized.

Description

Technical Field

[0001] The present application relates to the field of probe card testing technology, and in particular to a probe card testing method. Background Art

[0002] At present, the design of probe cards often uses finite element simulation, structural strength verification and other methods for preliminary verification, strengthens the weak points according to the simulated structure, and then places an order for procurement and assembly, and conducts whole card testing and verification. Because the back support plate of the probe card needs to reserve many PCB routing channels, the back support plate needs to be made into a hollow structure. When the probe card is subjected to stress, the force and structural strength of different areas are different, and the stress deformation is also different.

[0003] Currently, most probe cards can only be verified in packaging and testing factories. As testing opportunities are rare, they usually only focus on test items such as electrical signals, on / off, and program execution. There is a lack of analysis tools for the deformation of the entire card structure under ultra-low temperature, room temperature, and ultra-high temperature conditions. It is also difficult to troubleshoot corresponding test problems, which affects the production progress of the entire probe card. Summary of the invention

[0004] The present application aims to solve at least one of the technical problems existing in the prior art. To this end, the present application proposes a probe card testing method to solve the problems of low test efficiency of the current probe card and difficulty in troubleshooting test problems under three-temperature conditions.

[0005] The present application provides a probe card testing method, comprising the following steps:

[0006] S1. Install the detection sheet at the set position on the back of the probe card;

[0007] S2, facing the front side of the probe card downwards, and fixing it on the first fixing tool;

[0008] S3, mounting the wafer on a second fixing tool;

[0009] S4, the moving mechanism drives the second fixed tool to move, and makes the grinding needle area on the wafer collide with all the needle tips on the probe card;

[0010] S5, the moving mechanism drives the second fixed tool to move back and forth on the horizontal plane, so that the grinding needle area on the wafer grinds the needle tip on the probe card;

[0011] S6, adjusting the temperature control structure on the second fixed tooling to change the temperature of the wafer;

[0012] S7, the moving mechanism lifts the second fixed tooling upward, and the detection piece and the image acquisition machine collect data;

[0013] S8. Analyze data.

[0014] Based on the probe card test method, the mobile mechanism can be used to drive the wafer on the second fixed tooling to complete the needle grinding action, and the temperature control structure can be used to cool and heat the wafer, thereby realizing the wafer testing under three temperature conditions (low temperature, normal temperature, and high temperature). At the same time, it can also cooperate with the data collection work of the detection piece and the image acquisition machine to quickly and accurately obtain the relationship between the deformation of the probe card and the pressure it is subjected to at different temperatures.

[0015] Optionally, the step S1 specifically includes: installing a detection sheet on a low-strength area and / or a structural connection on the probe card.

[0016] Furthermore, based on the above-mentioned setting method of the detection piece, it is possible to reduce costs while ensuring that the data analysis of the force and deformation of the probe card under three-temperature conditions is more accurate, thereby improving the rationality of the position of the detection piece and improving the detection efficiency of the probe card.

[0017] Optionally, after step S5, step S51 is further included, detecting the grinding needle tip value, if it meets the standard, proceeding to step S6, if it does not meet the standard, re-executing steps S4 and S5.

[0018] Furthermore, based on the above step S51, the probe card can be tested only when the tips of all probes on the probe card are aligned with the same plane in the vertical direction, further ensuring that all probes can apply similar pressure to the probe card, thereby improving the test accuracy of the probe card.

[0019] Optionally, the step S6 is specifically as follows: the temperature control structure controls the wafer to adjust to a set temperature and maintains it for a set time; the set temperature includes a first set temperature, a second set temperature and a third set temperature; wherein the third set temperature is greater than the second set temperature, and the second set temperature is greater than the first set temperature.

[0020] Optionally, after step S6, the method further includes step S61, wherein the wafer contacts the probes of the probe card, and the data of the detection sheet is cleared.

[0021] Furthermore, based on the above step S61, data reset of the detection chip can be achieved, and the contact action between the wafer and the probe of the probe card can be used to trigger it each time, without the need for additional reset and clearing work, thereby improving work fluency and efficiency.

[0022] Optionally, the image acquisition machine is fixedly mounted on the first fixed fixture and is used to acquire the deformation magnitude of the back of the probe card caused by stress, and the back of the probe card is located within the shooting range of the image acquisition machine.

[0023] Optionally, the step S7 is specifically as follows: the moving mechanism lifts the second fixing fixture upwards, and when the probes of the probe card reach the maximum downward pressure, the detection sheet and the image acquisition machine perform data acquisition.

[0024] Furthermore, based on the above step S7, data collection can be started when the wafer applies pressure to the probe and the probe reaches the maximum downward pressure, so that the collected data is more consistent, effectively improving data accuracy and reliability.

[0025] Optionally, the moving mechanism includes an x-axis translation mechanism, a y-axis translation mechanism, a z-axis lifting mechanism and a base, the x-axis translation mechanism and the y-axis translation mechanism are respectively used to drive the second fixed tooling to reciprocate in two horizontal directions perpendicular to each other, and the z-axis lifting mechanism is used to drive the second fixed tooling to reciprocate in a vertical direction, the fixed end of the x-axis translation mechanism is installed on the base, the movable end of the x-axis translation mechanism is connected to the fixed end of the y-axis translation mechanism, the movable end of the y-axis translation mechanism is connected to the fixed end of the z-axis lifting mechanism, and the movable end of the z-axis lifting mechanism is connected to the second fixed tooling.

[0026] Furthermore, based on the above-mentioned moving mechanism, the x-axis translation mechanism and the y-axis translation mechanism can be used to better realize the grinding of the wafer against the probe of the probe card. The entire work is completed by translation in the horizontal direction to avoid excessive errors at the tip of the probe and ensure the accuracy of the data. At the same time, the z-axis lifting mechanism can be directly connected to the second fixed tooling to make the wafer quickly approach or move away from the probe, which has a faster action response, avoids other interferences, and makes the position adjustment of the wafer more precise.

[0027] Optionally, the second fixing tool includes a tray and a fixing structure, the tray has a lifting plane for supporting the wafer, the temperature control structure is arranged on the tray, and the fixing structure is used to fix the wafer on the tray.

[0028] Furthermore, based on the above-mentioned second fixing tool, the temperature control structure can be set at the center position of the lifting plane or the temperature control structure can be evenly arranged on the lifting plane. The temperature control structure can be in direct contact with the wafer to achieve the effect of rapid heating or cooling of the wafer. The fixing structure can be a clamping ring surrounding the circumference of the wafer, which radially restricts the circumferential side of the wafer. The clamping ring can be adjusted in size in the radial direction, so as to facilitate the fixation of wafers of various sizes, and also improve the universality of the entire second fixing tool. It should be noted that the fixing structure can also be an adsorption structure, a magnetic structure, etc., as long as the wafer can be stably and reliably fixed on the tray.

[0029] Optionally, the step S8 specifically includes: performing a comprehensive analysis based on the corresponding set temperature, the pressure value detected by the detection piece, and the deformation amount of the corresponding detection piece position captured by the image acquisition machine.

[0030] One or more of the above embodiments of the present application have at least one or more of the following beneficial effects:

[0031] The mobile mechanism can be used to drive the wafer on the second fixed tooling to complete the needle grinding action, and the temperature control structure can be used to cool and heat the wafer, thereby realizing the testing of the wafer under three temperature conditions (low temperature, normal temperature, and high temperature). At the same time, it can also cooperate with the data collection work of the detection piece and the image acquisition machine to quickly and accurately obtain the relationship between the deformation of the probe card and the pressure it is subjected to at different temperatures.

[0032] Additional aspects and advantages of the present application will be given in part in the description below, and in part will become apparent from the description below, or will be learned through the practice of the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] The disclosure of the present application will become more easily understood with reference to the accompanying drawings. It is easy for those skilled in the art to understand that these drawings are only for illustrative purposes and are not intended to limit the scope of protection of the present application. In addition, similar numbers in the drawings are used to represent similar components, among which:

[0034] Figure 1 This is a schematic diagram of a structure in which a probe card and a wafer according to an embodiment of the present application are respectively installed on a first fixing fixture and a second fixing fixture;

[0035] Figure 2 It is a structural schematic diagram of the moving mechanism, the first fixing fixture and the second fixing fixture according to the embodiment of the present application;

[0036] Figure 3 A top view of the mobile mechanism and the second fixing tooling according to an embodiment of the present application;

[0037] Figure 4 It is a structural schematic diagram of the mobile mechanism and the second fixed tooling according to the embodiment of the present application;

[0038] Figure 5 A side view of the probe card according to an embodiment of the present application;

[0039] Figure 6 This is a schematic diagram of the structure of the back side of the probe card described in the embodiment of the present application;

[0040] Figure 7 A set of data analysis graphs obtained by the probe card testing method described in an embodiment of the present application;

[0041] Figure 8 Another set of data analysis graphs measured by the probe card testing method described in the embodiment of the present application;

[0042] Fig. 9 This is a flow chart of the probe card testing method described in an embodiment of the present application.

[0043] Description of Reference Numerals

[0044] 1. Probe card; 11. Detection sheet; 21. First fixed tool; 22. Second fixed tool; 221. Tray; 3. Wafer; 41. X-axis translation mechanism; 42. Y-axis translation mechanism; 43. Z-axis lifting mechanism; 44. Base; 5. Image acquisition machine. DETAILED DESCRIPTION

[0045] Some embodiments of the present application are described below with reference to the accompanying drawings. Those skilled in the art should understand that these embodiments are only used to explain the technical principles of the present application and are not intended to limit the protection scope of the present application.

[0046] Currently, most probe cards can only be verified in packaging and testing factories. As testing opportunities are rare, they usually only focus on test items such as electrical signals, on / off, and program execution. There is a lack of analysis tools for the deformation of the entire card structure under ultra-low temperature, room temperature, and ultra-high temperature conditions. It is also difficult to troubleshoot corresponding test problems, which affects the production progress of the entire probe card.

[0047] Based on this, the present application provides a probe card testing method, which can drive the wafer on the second fixed tooling to complete the needle grinding action through a moving mechanism, and can also use the temperature control structure to achieve cooling and heating of the wafer, thereby realizing the wafer testing work under three temperature conditions (low temperature, normal temperature, and high temperature). At the same time, it can also cooperate with the data collection work of the detection piece and the image acquisition machine to quickly and accurately obtain the relationship between the deformation amount of the probe card and the pressure it is subjected to at different temperatures.

[0048] The present application will be described in detail below through specific embodiments.

[0049] Reference Figures 1 to 9 As shown, this embodiment provides a probe card testing method, comprising the following steps:

[0050] S1, installing the detection sheet 11 at a set position on the back of the probe card 1;

[0051] S2, the probe card 1 is placed with its front side facing downward and fixedly mounted on the first fixing fixture 21;

[0052] S3, mounting the wafer 3 on the second fixing fixture 22;

[0053] S4, the moving mechanism drives the second fixed tool 22 to move, and makes the grinding area on the wafer 3 collide with all the needle tips on the probe card 1;

[0054] S5, the moving mechanism drives the second fixed tool 22 to move back and forth on the horizontal plane, so that the grinding area on the wafer 3 grinds the needle tip on the probe card 1;

[0055] S6, adjusting the temperature control structure on the second fixing tool 22 to change the temperature of the wafer 3;

[0056] S7, the moving mechanism lifts the second fixed tool 22 upward, and the detection piece 11 and the image acquisition machine 5 perform data acquisition;

[0057] S8. Analyze data.

[0058] The probe card testing method provided in this embodiment can drive the wafer 3 on the second fixed tooling 22 to complete the needle grinding action through the moving mechanism, and can also use the temperature control structure to cool and heat the wafer 3, thereby realizing the testing of the wafer 3 under three temperature conditions (low temperature, normal temperature, and high temperature). At the same time, it can also cooperate with the data collection work of the detection piece 11 and the image acquisition machine 5 to quickly and accurately obtain the relationship between the deformation amount of the probe card 1 and the pressure it is subjected to at different temperatures.

[0059] Continue to refer to Figure 5 and Figure 6 The step S1 is specifically as follows: installing the detection sheet 11 in the low-strength area and / or structural connection on the probe card 1. Furthermore, the detection sheet 11 is arranged on the back of the probe card 1 at the position where deformation is likely to occur. Specifically, it can be arranged in a matrix manner, or in a circular array, linear array, etc., wherein the detection sheet 11 can be a strain gauge for detecting the pressure on the front side of the probe card 1 at the corresponding position. The detection sheet 11 can also be set one-to-one with the probe.

[0060] Furthermore, based on the above-mentioned setting method of the detection piece 11, it is possible to reduce costs while ensuring that the data analysis of the force and deformation of the probe card 1 under three-temperature conditions is more accurate, thereby improving the rationality of the position of the detection piece 11 and improving the detection efficiency of the probe card 1.

[0061] In some embodiments, after step S5, step S51 is also included, detecting the grinding needle tip value. If it meets the standard, step S6 is performed. If it does not meet the standard, steps S4 and S5 are re-executed. The standard refers to the maximum difference range of the tips of the probes on all probe cards 1 in the vertical direction. When the maximum difference does not exceed the range of the standard, it is considered to meet the standard. Otherwise, it is considered to be non-compliant with the standard.

[0062] Furthermore, based on the above step S51, the probe card 1 can be tested only when the tips of all probes on the probe card 1 are aligned with the same plane in the vertical direction, thereby further ensuring that all probes can apply similar pressure to the probe card 1 and improving the test accuracy of the probe card 1.

[0063] Optionally, step S6 is specifically as follows: the temperature control structure controls the wafer 3 to adjust to the set temperature and maintain the set time; the set temperature includes a first set temperature, a second set temperature and a third set temperature; wherein the third set temperature is greater than the second set temperature, and the second set temperature is greater than the first set temperature. Specifically, the first set temperature may be -40°C, the second set temperature may be room temperature, and the third set temperature may be 150°C, which may be modified according to production requirements.

[0064] Optionally, after step S6, the method further includes step S61, wherein the wafer 3 contacts the probes of the probe card 1, and the data of the detection sheet 11 is cleared. That is, the data of the detection sheet 11 is cleared only after the wafer 3 contacts the probes of the probe card 1.

[0065] Furthermore, based on the above step S61, data reset of the detection chip 11 can be achieved, and each time it can be triggered by the contact action between the wafer 3 and the probe of the probe card 1, without the need for additional reset and clearing work, thereby improving work fluency and efficiency.

[0066] Continue to refer to Figure 1 and Figure 2 As shown, the image acquisition machine 5 is fixedly installed on the first fixed tooling 21, and is used to collect the deformation amount of the back of the probe card 1 under the stress. The back of the probe card 1 is located within the shooting range of the image acquisition machine 5. It should be noted that the image acquisition machine 5 can shoot directly facing the back of the probe card 1, or it can shoot at a set angle with the back of the probe card 1, as long as the deformation amount data of the back of the probe card 1 can be accurately obtained.

[0067] The first fixed fixture 21 may be a frame structure, and the image acquisition machine 5, the probe card 1, the second fixed fixture 22 and the moving mechanism are sequentially arranged from top to bottom in the height direction.

[0068] Optionally, step S7 is specifically as follows: the moving mechanism lifts the second fixing tool 22 upward, and when the probe of the probe card 1 reaches the maximum downward pressure, the detection sheet 11 and the image acquisition machine 5 perform data acquisition, wherein the image acquisition machine 5 can be a high-precision camera, so that the deformation data of the probe card 1 can be obtained more intuitively.

[0069] Furthermore, based on the above step S7, the wafer 3 can be pressed by the probe and data collection can be started when the probe reaches the maximum downward pressure, so that the collected data is more consistent, and the data accuracy and reliability are effectively improved.

[0070] Continue to refer to Figures 1 to 4 As shown, the moving mechanism includes an x-axis translation mechanism 41, a y-axis translation mechanism 42, a z-axis lifting mechanism 43 and a base 44. The x-axis translation mechanism 41 and the y-axis translation mechanism 42 are respectively used to drive the second fixed tooling 22 to reciprocate in two horizontal directions perpendicular to each other. The z-axis lifting mechanism 43 is used to drive the second fixed tooling 22 to reciprocate in the vertical direction. The fixed end of the x-axis translation mechanism 41 is installed on the base 44, the movable end of the x-axis translation mechanism 41 is connected to the fixed end of the y-axis translation mechanism 42, the movable end of the y-axis translation mechanism 42 is connected to the fixed end of the z-axis lifting mechanism 43, and the movable end of the z-axis lifting mechanism 43 is connected to the second fixed tooling 22.

[0071] Furthermore, based on the above-mentioned moving mechanism, the x-axis translation mechanism 41 and the y-axis translation mechanism 42 can be used to better realize the grinding of the probe of the probe card 1 for the wafer 3. The entire work is completed by translation in the horizontal direction to avoid excessive errors at the tip of the probe and ensure the accuracy of the data. At the same time, the z-axis lifting mechanism 43 can be directly connected to the second fixed tooling 22 to make the wafer 3 quickly approach or move away from the probe, with faster action response, avoiding other interference, and making the position adjustment of the wafer 3 more accurate.

[0072] In some further examples, the moving mechanism can use a high-rigidity structure, a large-torque control motor, and a high-precision grating feedback system to ensure motion control accuracy, specifically, the motion control accuracy can be reduced to ±0.1um.

[0073] Optionally, the second fixing tool 22 includes a tray 221 and a fixing structure, the tray 221 has a lifting plane for supporting the wafer 3 , the temperature control structure is arranged on the tray 221 , and the fixing structure is used to fix the wafer 3 on the tray 221 .

[0074] Furthermore, based on the above-mentioned second fixing tool 22, the temperature control structure can be set at the center position of the lifting plane or the temperature control structure can be evenly arranged on the lifting plane. The temperature control structure can be in direct contact with the wafer 3 to achieve the effect of rapid heating or cooling of the wafer 3. The fixing structure can be a clamping ring surrounding the side of the wafer 3, which radially restricts the lateral edge of the wafer 3. The clamping ring can be adjusted in size in the radial direction, so as to facilitate the fixation of wafers 3 of various sizes, and also improve the universality of the entire second fixing tool 22. It should be noted that the fixing structure can also be an adsorption structure, a magnetic structure, etc., as long as the wafer 3 can be stably and reliably fixed on the tray 221.

[0075] Optionally, step S8 is specifically as follows: a comprehensive analysis is performed according to the corresponding set temperature, the pressure value detected by the detection piece 11, and the deformation amount of the corresponding detection piece 11 captured by the image acquisition machine 5; wherein, for different set temperatures, the pressure value detected by each detection piece 11 is comprehensively analyzed with the deformation amount captured by the corresponding image acquisition machine 5, and finally a similar Figure 7 and Figure 8 The analysis conclusions are obtained to optimize and adjust the probe card 1. Specifically, the structure of the strong rigidity area can be optimized to reduce the weight, increase the PCB interface layout space, and the structural strength of the weak rigidity area can be strengthened.

[0076] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present application. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner.

[0077] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of the features. In the description of this application, the meaning of "plurality" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined.

[0078] Although the embodiments of the present application have been shown and described above, it can be understood that the above embodiments are exemplary and cannot be understood as limitations on the present application. Ordinary technicians in this field can change, modify, replace and modify the above embodiments within the scope of the present application.

Claims

1. A probe card testing method, characterized in that: The steps include: S1, installing a detection sheet (11) at a set position on the back of the probe card (1); S2, placing the front side of the probe card (1) facing downward and fixing it on the first fixing fixture (21); S3, mounting the wafer (3) on a second fixing fixture (22); S4, the moving mechanism drives the second fixed tool (22) to move, and causes the grinding needle area on the wafer (3) to abut against all needle tips on the probe card (1); S5, the moving mechanism drives the second fixed tool (22) to move back and forth on a horizontal plane, so that the grinding needle area on the wafer (3) grinds the needle tip on the probe card (1); S6, adjusting the temperature control structure on the second fixing tool (22) to change the temperature of the wafer (3); S7, the moving mechanism lifts the second fixed tooling (22) upward, and the detection sheet (11) and the image acquisition machine (5) perform data acquisition; S8. Analyze data.

2. The probe card testing method according to claim 1, characterized in that: The step S1 specifically comprises: installing a detection sheet (11) on a low-strength area and / or a structural connection on the probe card (1).

3. The probe card testing method according to claim 1, characterized in that: After step S5, the method further includes step S51, detecting the grinding needle tip value. If the value meets the standard, the method proceeds to step S6. If the value does not meet the standard, the method re-executes steps S4 and S5.

4. The probe card testing method according to claim 1, characterized in that: The step S6 specifically comprises: the temperature control structure controls the wafer (3) to adjust to a set temperature and maintain the set time; the set temperature comprises a first set temperature, a second set temperature and a third set temperature; wherein the third set temperature is greater than the second set temperature, and the second set temperature is greater than the first set temperature.

5. The probe card testing method according to claim 4, characterized in that: After step S6, the method further includes step S61, wherein the wafer (3) contacts the probes of the probe card (1), and the data of the detection sheet (11) is cleared.

6. The probe card testing method according to claim 1, characterized in that: The image acquisition machine (5) is fixedly mounted on the first fixed fixture (21) and is used to acquire the deformation magnitude of the back of the probe card (1) under stress, and the back of the probe card (1) is located within the shooting range of the image acquisition machine (5).

7. The probe card testing method according to claim 1, characterized in that: The step S7 specifically comprises: the moving mechanism lifts the second fixing tool (22) upwards, and when the probe of the probe card (1) reaches the maximum downward pressure, the detection sheet (11) and the image acquisition machine (5) perform data acquisition.

8. The probe card testing method according to claim 1, characterized in that: The moving mechanism comprises an x-axis translation mechanism (41), a y-axis translation mechanism (42), a z-axis lifting mechanism (43) and a base (44); the x-axis translation mechanism (41) and the y-axis translation mechanism (42) are respectively used to drive the second fixed fixture (22) to reciprocate in two mutually perpendicular horizontal directions; the z-axis lifting mechanism (43) is used to drive the second fixed fixture (22) to reciprocate in a vertical direction; the fixed end of the x-axis translation mechanism (41) is mounted on the base (44); the movable end of the x-axis translation mechanism (41) is connected to the fixed end of the y-axis translation mechanism (42); the movable end of the y-axis translation mechanism (42) is connected to the fixed end of the z-axis lifting mechanism (43); and the movable end of the z-axis lifting mechanism (43) is connected to the second fixed fixture (22).

9. The probe card testing method according to claim 8, characterized in that: The second fixing tool (22) comprises a tray (221) and a fixing structure, the tray (221) having a lifting plane for supporting the wafer (3), the temperature control structure being arranged on the tray (221), and the fixing structure being used for fixing the wafer (3) on the tray (221).

10. The probe card testing method according to claim 1, characterized in that: The step S8 specifically comprises: performing a comprehensive analysis based on the corresponding set temperature, the pressure value detected by the detection piece (11), and the deformation amount at the location of the corresponding detection piece (11) captured by the image acquisition machine (5).

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