Narrow-band large-delay delayer
By using a combined structure of microstrip lines and half-module substrate integrated waveguides in microwave and millimeter wave bands, an ENZ channel is formed, which solves the problems of large size and insertion loss in large delay design, and achieves a compact and efficient narrowband large delay effect.
Patent Information
- Application Number
- CN202311559567.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2023-11-22
- Publication Date
- 2025-05-23
AI Technical Summary
The prior art has problems of large size and large insertion losses when achieving large delays in microwave and millimeter wave bands, which is difficult to meet the practical application needs.
The combined structure of microstrip lines and half-module substrate integrated waveguides is adopted, and connected through impedance transformation to form an ENZ channel to achieve a narrow band delay.
It realizes a compact structural design, with a small area, large delay, small insertion loss, and unlimited working frequency. It is suitable for millimeter wave and even higher frequency bands, with high integration.
Smart Images
Figure HDA0004562021900000011
Abstract
Description
Technical Field
[0001] The invention belongs to the field of radio frequency microwaves, and in particular relates to a narrow-band large-delay delay device. Background Art
[0002] Real-time delay lines are widely used in electronic and communication systems and are one of the key components. It should be pointed out that it is not easy to achieve long delays in microwave and millimeter wave frequency bands. If it is purely dependent on the length of the transmission line, there will usually be problems of large size and large insertion loss, which is not conducive to practical applications. However, the demand for long delays still exists. For example, narrowband long-delay delay devices are often used in chipless wireless tag systems. Multiple narrowband long delays are used to realize echo signal time domain reflectometry, and then identify echo codes. They can also be used in microwave circuits for delay compensation, etc.
[0003] There are several main ways to achieve narrowband large delay, such as using surface acoustic wave devices (SAW) or bulk acoustic wave devices (BAW), but their operating frequency is limited, usually below the L band, and the delay is large, often in the order of microseconds, which is not easy to fine-tune. Static magnetostatic wave devices can also achieve narrowband large delay, but the characteristics of ferrite materials are more sensitive to temperature changes. The use of "C" type parallel coupled microstrip structure can also produce narrowband large delay, but it needs to be implemented in TEM transmission lines such as strip lines. Coupled lines with back slots can also produce narrowband large delays, but the back slots are not conducive to circuit assembly. There are also magnetic induction wave delay devices, but the above circuits usually have problems such as complex circuit design, large size, and large insertion loss. Therefore, it is necessary to develop new delay devices based on new delay mechanisms to further achieve better performance. Summary of the invention
[0004] In view of the above problems, the purpose of the present invention is to provide a narrowband large delay time delay device with a compact structure, a planar circuit structure, easy integration, good standing wave and insertion loss, no operating frequency restrictions, can meet the requirements of related microwave and millimeter wave components, and can be widely used in related electronic communications, radar and other systems.
[0005] The specific technical solution for achieving the purpose of the present invention is:
[0006] A narrowband large-delay time delay device, comprising a microstrip line and a half-mode substrate integrated waveguide;
[0007] The microstrip line and the half-mode substrate integrated waveguide are connected after impedance transformation.
[0008] Furthermore, the substrate thicknesses of the microstrip line and the half-mode substrate integrated waveguide are the same, or the substrate thickness of the microstrip line is greater than the substrate thickness of the half-mode substrate integrated waveguide.
[0009] Furthermore, the half-mode substrate integrated waveguide forms an ENZ channel.
[0010] Furthermore, when the thickness of the microstrip line substrate is equal to the thickness of the substrate integrated waveguide substrate, the microstrip line width may be too thin due to the thin thickness of the substrate integrated waveguide. At this time, the substrate thickness of the microstrip line is set to be greater than the substrate thickness of the half-mode substrate integrated waveguide to increase the microstrip line width.
[0011] Furthermore, the microstrip line and the half-mode substrate integrated waveguide are integrated into one piece, and a metalized blind hole is provided when the thickness of the microstrip substrate is greater than the thickness of the substrate integrated waveguide.
[0012] Furthermore, the characteristic impedance of the microstrip line is 50 ohms.
[0013] Furthermore, when the input impedance of the half-mode substrate integrated waveguide at the cutoff frequency is 50 ohms, it is directly connected to a microstrip line with a characteristic impedance of 50 ohms without impedance transformation. Compared with the prior art, the beneficial effects of the present invention are:
[0014] The narrowband large delay time delay device of the present invention adopts a semi-mode substrate integrated waveguide structure with a relatively thin substrate, which is connected to a microstrip line with a substrate of different or same thickness after impedance transformation. The difference between the thickness of the microstrip line substrate and the thickness of the semi-mode substrate integrated waveguide substrate can be determined by the appropriate width of the microstrip line.
[0015] The narrowband large-delay delay device of the present invention has a small area, a large delay, a small insertion loss, and an unrestricted operating frequency. It can operate in millimeter waves or even higher frequency bands, has a high degree of integration, and can be interconnected with various passive and active devices.
[0016] The present invention is further described below in conjunction with specific implementation modes. BRIEF DESCRIPTION OF THE DRAWINGS
[0017] Figure 1 It is a schematic diagram of the structure of the narrow-band large-delay delay device of the present invention, wherein Figure 1 (a) is the front view, Figure 1 (b) is the A-A' side cross-sectional view, Figure 1 (c) is the BB' cross-sectional view. DETAILED DESCRIPTION
[0018] A narrowband large-delay time delay device, comprising a microstrip line and a half-mode substrate integrated waveguide;
[0019] The microstrip line and the half-mode substrate integrated waveguide are connected after impedance transformation.
[0020] The substrate thickness of the microstrip line and the semi-mode substrate integrated waveguide is the same or different, which is determined by the line width of the microstrip line; specifically, when the substrate thickness of the microstrip line is the same as the substrate thickness of the substrate integrated waveguide, the thickness of the substrate integrated waveguide is thin, which may cause the line width of the microstrip line to be too thin, and the excessively thin line width of the microstrip line is difficult to manufacture and is not practical enough. At this time, a thicker substrate material can be used under the microstrip line. At this time, the substrate thickness of the microstrip line is greater than the substrate thickness of the semi-mode substrate integrated waveguide, and the microstrip line is separated from the ENZ channel by a metallized blind hole;
[0021] The half-mode substrate integrated waveguide forms an ENZ channel, and its impedance is connected to the microstrip line after a period of impedance transformation, thereby avoiding the need for a thick waveguide in the traditional ENZ channel to transition to a microstrip structure.
[0022] Under certain specific conditions, such as appropriate substrate dielectric constant, thickness, cut-off frequency, etc., when the input impedance of the half-mode substrate integrated waveguide at the cut-off frequency is 50 ohms, it can be directly connected to a microstrip line with a characteristic impedance of 50 ohms without the need for an impedance transformation section.
[0023] The microstrip line and the half-mode substrate integrated waveguide are integrated in one piece, and a metalized blind hole is provided when the substrate thickness of the microstrip line is greater than the substrate thickness of the substrate integrated waveguide.
[0024] The narrowband large delay time delay device of the present invention has good impedance matching, so that the delay device has good standing wave and insertion loss. In addition, due to the inherent characteristics of the ENZ channel, a narrowband large delay characteristic is obtained.
[0025] Example
[0026] Combination Figure 1 , a narrowband large delay time delay device, comprising a microstrip line and a half-mode substrate integrated waveguide;
[0027] The microstrip line and the half-mode substrate integrated waveguide are connected after impedance transformation.
[0028] The substrate thickness of the microstrip line and the half-mode substrate integrated waveguide is the same or different, and is determined by the line width of the microstrip line; specifically, when the line width of the microstrip line is thinner, since the thickness of the microstrip line substrate is the same as the thickness of the substrate integrated waveguide, the thickness of the substrate integrated waveguide is thinner, which may cause the line width of the 50-ohm microstrip line to be too thin, and the too thin microstrip line width is difficult to manufacture and is not practical enough. At this time, a thicker substrate material can be used under the microstrip line, that is, the substrate thickness of the microstrip line is greater than the substrate thickness of the half-mode substrate integrated waveguide, and the microstrip line is separated from the ENZ channel by a metallized blind hole;
[0029] The half-mode substrate integrated waveguide forms an ENZ channel, and its impedance is connected to the microstrip line after a period of impedance transformation, thereby avoiding the need for a thick waveguide in the traditional ENZ channel to transition to a microstrip structure.
[0030] Under certain specific conditions, such as appropriate substrate dielectric constant, thickness, cut-off frequency, etc., when the input impedance of the half-mode substrate integrated waveguide at the cut-off frequency is 50 ohms, it can be directly connected to a microstrip line with a characteristic impedance of 50 ohms without the need for an impedance transformation section.
[0031] The microstrip line and the half-mode substrate integrated waveguide are integrated in one piece, and a metalized blind hole is provided when the substrate thickness of the microstrip line is greater than the substrate thickness of the substrate integrated waveguide.
[0032] The narrowband large delay time delay device of the present invention has good impedance matching, so that the delay device has good standing wave and insertion loss. In addition, due to the inherent characteristics of the ENZ channel, a narrowband large delay characteristic is obtained.
[0033] The above embodiments show and describe the basic principles and main features of the present invention. Those skilled in the art should understand that the present invention is not limited by the above embodiments, and the above embodiments and descriptions are only for explaining the principles of the present invention. Without departing from the spirit and scope of the present invention, the present invention may have various changes and improvements, and these changes and improvements all fall within the scope of the present invention to be protected.
Claims
1. A narrow-band large-delay delay device, It is characterized in that Including microstrip lines and half-mode substrate integrated waveguides; The microstrip line and the half-mode substrate integrated waveguide are connected after impedance transformation.
2. The narrowband large delay delay device according to claim 1, It is characterized in that The substrate thickness of the microstrip line and the half-mode substrate integrated waveguide is the same or the substrate thickness of the microstrip line is greater than the substrate thickness of the half-mode substrate integrated waveguide.
3. The narrowband large delay delay device according to claim 1, It is characterized in that The half-mode substrate integrated waveguide forms an ENZ channel.
4. The narrowband large delay delay device according to claim 1, It is characterized in that When the thickness of the microstrip line substrate is equal to the thickness of the substrate integrated waveguide substrate, the microstrip line width may be too thin due to the thin thickness of the substrate integrated waveguide. At this time, the substrate thickness of the microstrip line is set to be greater than the substrate thickness of the half-mode substrate integrated waveguide to increase the microstrip line width.
5. The narrowband large delay delay device according to claim 1, It is characterized in that The microstrip line and the half-mode substrate integrated waveguide are integrated in one piece, and a metalized blind hole is provided when the thickness of the microstrip substrate is greater than the thickness of the substrate integrated waveguide.
6. The narrowband large delay delay device according to claim 1, It is characterized in that The characteristic impedance of the microstrip line is 50 ohms.
7. The narrowband large delay delay device according to claim 1 or 6, It is characterized in that When the input impedance of the half-mode substrate integrated waveguide at the cutoff frequency is 50 ohms, it is directly connected to a microstrip line with a characteristic impedance of 50 ohms without impedance transformation.