Photonic crystal semiconductor laser

Abstract

The invention relates to the technical field of lasers, in particular to a photonic crystal semiconductor laser, which comprises a pumping cavity, which is enclosed by a top side wall, a bottom side wall and an annular side wall, the top side wall is provided with a light emitting window, and the bottom side wall is in a curved surface shape; the gain chip is arranged at the light emitting window and comprises a substrate, an active layer, a window layer and a photonic crystal structure which are sequentially arranged in the direction away from the side wall of the bottom, and the photonic crystal structure is provided with a plurality of holes; the reflecting mirror is arranged on the surface, facing the pumping cavity, of the side wall of the bottom, the reflecting mirror is right opposite to the gain chip, and the reflecting mirror is used for forming a resonant cavity with the photonic crystal structure; and the multiple pumping units are arranged on the surface, facing the pumping cavity, of the bottom side wall, and the multiple pumping units are annularly arranged on the periphery of the reflecting mirror. According to the invention, on the premise of realizing large-area and uniform carrier injection, the preparation difficulty of the photonic crystal semiconductor laser is reduced, and compact layout is realized.

Description

Technical Field

[0001] The invention belongs to the technical field of lasers, and in particular relates to a photonic crystal semiconductor laser. Background Art

[0002] Semiconductor lasers have the advantages of small size, wide wavelength coverage, and easy integration. Their gain chip structure can cover a wide emission spectrum through semiconductor energy band design and are widely used in laser medical treatment, industrial processing and other fields.

[0003] Photonic crystal surface emitting semiconductor lasers can achieve high beam quality and high-power laser output over a large light-emitting area by selecting the mode of the output beam through the photonic crystal layer. However, due to the large light-emitting area of ​​the photonic crystal surface emitting semiconductor laser, it is necessary to integrate a large-area electrode structure on the surface of the photonic crystal laser to maximize the uniformity of current injection. When the electrode structure is integrated on the surface of the photonic crystal laser, it is necessary to grow a cladding layer to bury the photonic crystal layer, which makes the preparation process of the photonic crystal laser more complicated. Summary of the invention

[0004] In view of this, the present invention aims to provide a photonic crystal semiconductor laser, which is at least conducive to reducing the difficulty of preparing the photonic crystal semiconductor laser while achieving large-area and uniform carrier injection.

[0005] To achieve the above object, the technical solution created by the present invention is implemented as follows: The invention provides a photonic crystal semiconductor laser, comprising: a pump cavity, the pump cavity is surrounded by a top side wall, a bottom side wall and an annular side wall, the top side wall and the bottom side wall are arranged oppositely, the annular side wall is located between the top side wall and the bottom side wall, the top side wall has a light exit window, and the bottom side wall is in a curved surface shape; a gain chip arranged at the light exit window, the gain chip comprises a substrate, an active layer, a window layer and a photonic crystal structure arranged in sequence in a direction away from the bottom side wall, the photonic crystal structure has a plurality of holes arranged periodically; a reflector, the reflector is arranged on a surface of the bottom side wall facing the pump cavity, the reflector is directly opposite to the gain chip, and the reflector is used to form a resonant cavity with the photonic crystal structure; a plurality of pump units, the plurality of pump units are arranged on a surface of the bottom side wall facing the pump cavity, the plurality of pump units are arranged in an annular manner on the periphery of the reflector, and the plurality of pump units are used to emit pump light to one end of the substrate of the gain chip.

[0006] Furthermore, the photonic crystal semiconductor laser further comprises: a light-transmitting first heat dissipation structure, the first heat dissipation structure is at least located on a surface of the substrate away from the active layer, and the material of the first heat dissipation structure comprises diamond or sapphire.

[0007] Furthermore, a surface of the first heat dissipation structure away from the substrate has an anti-reflection film.

[0008] Furthermore, the photonic crystal semiconductor laser further comprises: a light-transmitting second heat dissipation structure, the second heat dissipation structure is at least located on a surface of the photonic crystal structure away from the window layer, and the material of the second heat dissipation structure comprises diamond or sapphire.

[0009] Furthermore, a surface of the second heat dissipation structure away from the photonic crystal structure has an anti-reflection film.

[0010] Furthermore, the second heat dissipation structure is connected to the top side wall, and the gain chip is arranged on the light exit window through the second heat dissipation structure.

[0011] Furthermore, the top side wall, the bottom side wall and the annular side wall are an integrally formed structure, and the materials of the top side wall, the bottom side wall and the annular side wall are the same, and the materials of the top side wall, the bottom side wall and the annular side wall all include high-purity copper.

[0012] Furthermore, the plurality of holes include at least one of circular holes, rectangular holes, triangular holes or irregular holes.

[0013] Furthermore, the pump unit is a surface emitting semiconductor laser.

[0014] Compared with the prior art, the invention can achieve the following beneficial effects: a plurality of pumping units are integrated in the pump cavity of the photonic crystal semiconductor laser provided by the invention, which is beneficial to improving the miniaturization and integration of the photonic crystal semiconductor laser, and optical pumping is performed on the side of the gain chip away from the photonic crystal structure, thereby avoiding the problem that the photonic crystal structure blocks the pumping light, resulting in the pumping light being unable to achieve uniform carrier injection, and the gain chip does not include a distributed Bragg reflector structure, thereby avoiding the distributed Bragg reflector structure blocking the pumping light, and utilizing the reflector and the photonic crystal structure to form a resonant cavity, and the pump cavity and the reflector can reflect the pumping light, so that the pumping light that is not absorbed continues to pump the gain chip after multiple reflections, so that by integrating the pumping unit, not only can large-area, uniform and high-energy carrier injection be achieved by optical pumping, but also electrodes are avoided from being integrated on the photonic crystal structure, which is beneficial to reducing the difficulty of the preparation process of the photonic crystal semiconductor laser. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] The drawings constituting part of the present invention are used to provide a further understanding of the present invention. The exemplary embodiments and descriptions of the present invention are used to explain the present invention and do not constitute an improper limitation on the present invention. In the drawings: Figure 1 A schematic diagram of the structure of a photonic crystal semiconductor laser according to an embodiment of the present invention; Figure 2A top view of a portion of the structure of a photonic crystal semiconductor laser according to an embodiment of the present invention. DETAILED DESCRIPTION

[0016] In order to make the purpose, technical solution and advantages of the invention more clear, the invention is further described in detail below in conjunction with the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described here are only used to explain the invention and do not constitute a limitation of the invention.

[0017] It should be noted that, in the absence of conflict, the embodiments of the present invention and the features in the embodiments may be combined with each other.

[0018] In the description of the invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", etc., indicating the orientation or position relationship, are based on the orientation or position relationship shown in the drawings, and are only for the convenience of describing the invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the invention. In addition, the terms "first", "second", etc. are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, the features defined as "first", "second", etc. may explicitly or implicitly include one or more of the features. In the description of the invention, unless otherwise specified, the meaning of "multiple" is two or more.

[0019] In the description of the invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installation", "connection" and "connection" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the invention can be understood according to specific circumstances.

[0020] The present invention will be described in detail below with reference to the accompanying drawings and in combination with embodiments.

[0021] refer to Figure 1 and Figure 2The present invention provides a photonic crystal semiconductor laser, comprising: a pump cavity 105, the pump cavity 105 is surrounded by a top side wall, a bottom side wall and an annular side wall, the top side wall and the bottom side wall are arranged oppositely, the annular side wall is located between the top side wall and the bottom side wall, the top side wall has a light exit window, and the bottom side wall is in a curved surface shape; a gain chip 102 is arranged at the light exit window, the gain chip 102 includes a substrate, an active layer, a window layer and a photonic crystal structure 101 arranged in sequence in a direction away from the bottom side wall, and the photonic crystal structure has a plurality of periodically arranged holes 104; A reflector 107, the reflector 107 is arranged on the surface of the bottom side wall facing the pump cavity 105, and the reflector 107 is directly opposite to the gain chip 102, and the reflector 107 is used to form a resonant cavity with the photonic crystal structure 101; multiple pump units 106, the multiple pump units 106 are arranged on the surface of the bottom side wall facing the pump cavity 105, and the multiple pump units 106 are arranged in a ring around the outer periphery of the reflector 107, and the multiple pump units 106 are arranged in a multi-layer ring-staggered manner to achieve uniform pumping, and the multiple pump units 106 are used to emit pump light to one end of the substrate of the gain chip 102.

[0022] The window layer can be used as a buffer layer. Since the hole 104 needs to be etched during the preparation of the photonic crystal structure, the window layer can prevent the process of etching the hole 104 from causing damage to the active layer.

[0023] It should be noted that the epitaxial structure of the gain chip 102 does not need to be doped, and the gain chip 102 can select semiconductor gain materials of corresponding components or other types of gain medium materials according to the usage scenario to achieve a wider wavelength coverage range.

[0024] In some embodiments, the pump unit 106 is a laser chip, and the laser chip can select a material system according to the required wavelength requirement of the pump light. For example, if the required pump light wavelength is in the range of 600nm~1200nm, the laser chip can select a gallium arsenide material system; if the required pump light wavelength is in the range of 1300nm~1700nm, the laser chip can select an indium phosphide material system.

[0025] The reflector 107 needs to be coated with a high-reflectivity reflective film that covers a wide spectrum of the wavelength output range. The type and parameters of the reflector 107 can be adjusted according to the spot size required to be output by the photonic crystal semiconductor laser, the output power of the light beam, and other performance requirements. In some embodiments, the reflector 107 includes but is not limited to a plane mirror, a plano-concave mirror, a plano-convex mirror, or an aspherical mirror.

[0026] In some embodiments, the inner surface of the bottom sidewall facing the pump cavity 105 has a groove, and the reflector 107 is disposed in the groove.

[0027] Furthermore, it also includes: a light-transmitting first heat dissipation structure 103, the first heat dissipation structure 103 is at least located on the surface of the substrate away from the active layer, and the material of the first heat dissipation structure 103 includes diamond or sapphire. In other embodiments, the first heat dissipation structure 103 can also be made of other light-transmitting high thermal conductivity materials. One side of the gain chip 102 is bonded to the first heat dissipation structure 103 to achieve efficient heat dissipation of the gain chip 102.

[0028] Furthermore, the surface of the first heat dissipation structure 103 away from the substrate has an anti-reflection film. The anti-reflection film here has a high transmittance to the pump light, which is beneficial to improving the efficiency of the multiple pump units 106 in optically pumping the gain chip 102 .

[0029] Furthermore, the photonic crystal semiconductor laser also includes: a second light-transmitting heat dissipation structure 108, the second heat dissipation structure 108 is at least located on the surface of the photonic crystal structure away from the window layer, and the material of the second heat dissipation structure 108 includes diamond or sapphire. In other embodiments, the second heat dissipation structure 108 can also be made of other light-transmitting high thermal conductivity materials. The other side of the gain chip 102 is bonded to the second heat dissipation structure 108 to achieve efficient heat removal from the gain chip 102. And the photonic crystal structure 101 is bonded to the second heat dissipation structure 108 to achieve efficient heat removal from the top of the laser, and at the same time, the photonic crystal structure 101 is covered to prevent the hole 104 of the photonic crystal structure 101 from being contaminated.

[0030] Furthermore, a surface of the second heat dissipation structure 108 away from the photonic crystal structure has an anti-reflection film, and the anti-reflection film here is an anti-reflection film with high transmittance to the outgoing laser.

[0031] Furthermore, the second heat dissipation structure 108 is connected to the top side wall, and the gain chip 102 is arranged at the light exit window through the second heat dissipation structure 108. In this way, the top side wall can cool the second heat dissipation structure 108, thereby facilitating efficient heat dissipation of the gain chip when it is working.

[0032] In some embodiments, the first heat dissipation structure 103, the gain chip and the second heat dissipation structure 108 are all arranged in the light exit window, the side of the first heat dissipation structure 103 is connected to the side wall of the light exit window and is in surface contact with the side, and the side of the second heat dissipation structure 108 is connected to the side wall of the light exit window and is in surface contact with the side. In this way, the top side wall can cool the second heat dissipation structure 108 and the first heat dissipation structure 103, which is beneficial to the efficient discharge of the heat generated when the gain chip is working.

[0033] In some examples, the thickness of the top sidewall is not less than the sum of the thicknesses of the first heat dissipation structure, the second heat dissipation structure, and the gain chip.

[0034] Furthermore, the top sidewall, the bottom sidewall and the annular sidewall are integrally formed, and the materials of the top sidewall, the bottom sidewall and the annular sidewall are the same, and the materials of the top sidewall, the bottom sidewall and the annular sidewall all include high-purity copper. It is understandable that in other embodiments, the materials of the top sidewall, the bottom sidewall and the annular sidewall may also be other metal materials with high thermal conductivity.

[0035] In some embodiments, the surface of the top side wall facing the pump cavity 105, the surface of the bottom side wall facing the pump cavity 105, and the surface of the annular side wall facing the pump cavity 105 are all evaporated with a high-reflection film for the wavelength band of the pump light. This is beneficial to ensure that the pump light that is not fully absorbed by the gain chip 102 can continue to pump the gain chip 102 after multiple reflections in the pump cavity 105, thereby helping to improve the pump efficiency.

[0036] Further, the plurality of holes 104 in the photonic crystal structure 101 include at least one of circular holes, rectangular holes, triangular holes or irregular holes. In some examples, among the plurality of holes 104 in the photonic crystal structure 101, holes of two shapes are arranged in two periods.

[0037] Specifically, the shape, size and arrangement of holes 104 of the photonic crystal structure 101 can be designed according to the parameter requirements of the photonic crystal semiconductor laser. The arrangement of holes 104 of the photonic crystal structure 101 can be a single-periodic arrangement or a double-periodic arrangement.

[0038] In some embodiments, the thickness of the top side wall, the bottom side wall and the annular side wall are all in the range of 3 mm to 30 mm, the outer diameter of the annular side wall can be in the range of 30 mm to 500 mm, the inner diameter of the annular side wall can be in the range of 25 mm to 450 mm, the light exit window on the top side wall is a square hole, the side length of the square hole can be in the range of 0.5 mm to 50 mm, and the groove on the surface of the bottom side wall facing the pump cavity 105 for setting the reflector 107 can be a circular groove, and the diameter of the circular groove can be in the range of 1 mm to 100 mm.

[0039] In some embodiments, the reflector 107 can be a circular plane mirror, the diameter of the circular plane mirror can be in the range of 1mm~100mm, the thickness of the circular plane mirror can be in the range of 0.5mm~50mm, and the wavelength band corresponding to the high-reflection film coated on the circular plane mirror can be 800nm~1500nm.

[0040] In some embodiments, the orthographic projection of the first heat dissipation structure 103 on the substrate surface is a square, the side length of the square can be in the range of 0.5 mm to 50 mm, the thickness of the first heat dissipation structure 103 can be in the range of 0.3 mm to 30 mm, and the wavelength range of the light beam corresponding to the antireflection film on the surface of the first heat dissipation structure 103 is 800 nm to 1500 nm.

[0041] In some embodiments, the orthographic projection of the second heat dissipation structure 108 on the substrate surface is a square, the side length of the square can be in the range of 0.5 mm to 50 mm, the thickness of the second heat dissipation structure 108 can be in the range of 0.3 mm to 30 mm, and the wavelength range of the light beam corresponding to the antireflection film on the surface of the second heat dissipation structure 108 is 800 nm to 1500 nm.

[0042] In some embodiments, the photonic crystal structure 101 includes a plurality of circular holes arranged in an array, the diameter of the circular holes can be in the range of 1 nm to 500 nm, the depth of the circular holes can be in the range of 10 nm to 1000 nm, and the duty cycle of the plurality of circular holes can be in the range of 5% to 50%.

[0043] In some embodiments, the gain chip 102 is a gain chip 102 of a gallium arsenide material system, the material of the substrate is GaAs, the gain chip 102 has no DBR (distributed Bragg reflector) structure, and the active layer includes a periodically arranged barrier layer / quantum well layer / barrier layer structure. The material of the barrier layer can be Al 0.06 GaAs, the material of the quantum well layer can be In 0.32 GaAs. In some other examples, the component of In in the quantum well layer can be in the range of 0 to 0.5, the component of Al can be in the range of 0 to 0.2, the thickness of the barrier layer can be in the range of 20 nm to 200 nm, the thickness of the quantum well layer can be in the range of 1 nm to 20 nm, and the emission wavelength band corresponding to the gain chip 102 is 800 nm to 1300 nm.

[0044] In some embodiments, the window layer is made of Al z GaAs material, where 0 < z < 1, and the thickness of the window layer can be in the range of 10 nm to 800 nm.

[0045] Furthermore, the pumping unit 106 is a surface-emitting semiconductor laser.

[0046] In some embodiments, the pumping unit 106 is a surface-emitting semiconductor laser based on a gallium arsenide material system. The surface-emitting semiconductor laser includes: a substrate, the material of the substrate is N-type GaAs; an N-type DBR layer, and the N-type DBR layer includes alternately arranged Al 0.25Ga 0.75 As layer and Al 0.95 Ga 0.05 As layer, the thickness of a single layer of material in the N-type DBR layer can be 1 / 4 of the output wavelength, and the dopant of the N-type DBR layer can be Si, and the doping concentration of Si can be 1E16 / cm 3 ~8E18 / cm 3 The active region is a barrier layer / quantum well layer / barrier layer structure, and the material of the barrier layer can be Al 0.42 Ga 0.58 As, the material of the quantum well layer can be Al 0.08 Ga 0.92 As, the thickness of the barrier layer can be in the range of 20nm~200nm, the thickness of the quantum well layer can be in the range of 1nm~20nm, and the light-emitting band of the surface-emitting semiconductor laser can be 600nm~800nm; P-type DBR layer, the P-type DBR layer includes Al 0.25 Ga 0.75 As and Al 0.95 Ga 0.05 As, the dopant of the P-type DBR layer can be C, and the doping concentration of C can be 1E18 / cm 3 ~1E20 / cm 3 In the range of oxidation restriction layer, the material of oxidation restriction layer is Al 0.98 Ga 0.02 As, the thickness of the oxidation restriction layer can be in the range of 20nm~1000nm.

[0047] It should be noted that a plurality of pump units 106 form a curved annular pump array, and the curved annular pump array is tilted inward to ensure that the light emitted by each pump unit 106 converges to the bottom of the gain chip 102. The curved annular pump array includes multiple layers of staggered pump units, and the light beams emitted by the pump units are coupled and superimposed through the multiple layers of staggered arrangement to achieve a large-area, uniform pump spot. The pump power can be scaled by increasing or decreasing the number of pump units 106 and the number of layers in the curved annular pump array, and the curvature radius and size of the bottom sidewall can be adjusted according to the light-emitting area and pump light power required by the photonic crystal semiconductor laser. The pump area adjustment and pump power adjustment can be achieved by increasing or decreasing the number of pump units 106 in the curved annular pump array, the number of layers and the inclination angle.

[0048] For the curved annular pump array formed by multiple pump units, in some examples, the pump unit is a surface-emitting semiconductor laser, and the light emitted by the surface-emitting semiconductor laser is a circularly symmetrical spot. Through multiple layers of staggered and annularly arranged pump units, the pump spots generated by the multiple pump units are ensured to be staggered and superimposed to form a uniform circular pump spot.

[0049] In some embodiments, the surface of the bottom side wall facing the pump cavity can be an ellipsoidal inner wall or a hemispherical inner wall. In some examples, the radius of curvature R of the hemispherical inner wall satisfies: 10mm≤R≤100mm. In some examples, the radius of curvature R is preferably in the range of 20mm~50mm. Within this range, the compactness of the arrangement of the pump units and the uniformity of the superimposed light spots can be taken into account. In some examples, the opening diameter D of the hemispherical inner wall and the radius of curvature R satisfy: D=2R×sin(α), where α is the half angle of the opening of the hemispherical inner wall, and α is preferably in the range of 60°~120°. In some examples, the hemispherical inner wall is plated with a high-reflection film with a reflectivity of >99% to the laser wavelength.

[0050] For a curved annular pump array formed by multiple pump units, in some embodiments, multiple pump units are arranged in layers and staggered from bottom to top along the latitude direction; the number of layers N of the pump units arranged in a ring in the curved annular pump array is determined by the radius of curvature R of the hemispherical inner wall and the target spot size. In some examples, the number of layers N of the pump units satisfies: N=[R / k], where k is the layer spacing adjustment coefficient, and k is in the range of 3mm~8mm. In some examples, the number M of pump units per layer satisfies: M≥2π×r n ×sin(θ / 2), r n is the radius of the nth ring, and θ is the divergence angle. For example, R = 30 mm, θ = 20°, the radius of the second layer r 2 =10mm, the second layer needs to include at least 12 pump units; the staggered angle of adjacent pump units in two adjacent layers is Δφ=180° / M, which is conducive to eliminating interference fringes.

[0051] In some examples, the basic parameters of the pump unit are as follows: the wavelength is in the range of 750nm~1500nm, preferably 808nm or 940nm, which can ensure the coverage of the pumping requirements of mainstream semiconductor lasers and solid-state lasers; the single-point output power is in the range of 0.01W~100W, which can be continuous or pulsed mode, preferably the single-point output power is in the range of 0.1W~1W, so that the thermal effect and light intensity requirements can be balanced; the divergence angle (full angle) is in the range of 1°~40°, preferably 5°~30°, so that it matches the concave focusing characteristics; the pump spot size D satisfies: θ≥2×arcsin(D / 2R); the diameter of the pump unit is in the range of 2mm~8mm, preferably 3mm~5mm, so that it is conducive to ensuring high uniformity of light field superposition while arranging tightly; the beam mode is a near-Gaussian beam (beam quality evaluation factor M²≤1.5).

[0052] In some examples, in order to improve the uniformity of the pump spot, the power of the pump units located in different layers is designed as follows: the power of the outermost pump unit is 100%, which decreases toward the inner layer, and the power difference between two adjacent layers is in the range of 3%~8%; and the spacing between the pump units is greater than 1.2 times the diameter of the pump unit, which is helpful to reduce thermal crosstalk; the installation angle error of the pump unit is ≤±0.5°, and the axial position deviation is ≤±0.2mm.

[0053] The photonic crystal semiconductor laser provided in the above embodiment solves the problem that it is difficult for a photonic crystal laser to achieve uniform carrier injection over a large area, and can achieve stable high-power laser output. Specifically, a gain chip 102 including a photonic crystal structure 101 without a DBR structure is used, combined with a curved annular pump array and a reflector 107 to achieve laser output, and carrier injection is achieved for the gain chip 102 without a DBR structure by bottom optical pumping, thereby avoiding the photonic crystal structure 101 and the DBR structure from blocking the pump light, and the reflector 107 is used to reflect the laser generated by the gain chip 102 to the light output surface, the gain chip 102 is bonded between the first heat dissipation structure 103 and the second heat dissipation structure 108, and a high thermal conductivity metal material is used to surround the pump cavity 105, which can effectively improve the heat dissipation of the photonic crystal semiconductor laser.

[0054] It should be understood that the various forms of processes shown above can be used to reorder, add or delete steps. For example, the steps described in the disclosure of the present invention can be performed in parallel, sequentially or in different orders, as long as the desired results of the technical solution disclosed in the present invention can be achieved, and this document does not limit this.

[0055] The above specific implementations do not constitute a limitation on the protection scope of the present invention. It should be understood by those skilled in the art that various modifications, combinations, sub-combinations and substitutions can be made according to design requirements and other factors. Any modification, equivalent substitution and improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims

1. A photonic crystal semiconductor laser, characterized in that: include: A pump cavity, the pump cavity is surrounded by a top sidewall, a bottom sidewall and an annular sidewall, the top sidewall and the bottom sidewall are arranged opposite to each other, the annular sidewall is located between the top sidewall and the bottom sidewall, the top sidewall has a light exit window, and the bottom sidewall is curved; A gain chip disposed at the light exit window, the gain chip comprising a substrate, an active layer, a window layer and a photonic crystal structure arranged in sequence in a direction away from the bottom sidewall, the photonic crystal structure having a plurality of holes arranged periodically; A reflector, wherein the reflector is arranged on a surface of the bottom side wall facing the pump cavity, and the reflector is directly opposite to the gain chip, and the reflector is used to form a resonant cavity with the photonic crystal structure; A plurality of pumping units are provided on the surface of the bottom side wall facing the pumping cavity, and the plurality of pumping units are arranged in a ring around the outer periphery of the reflector, and the plurality of pumping units are used to emit pumping light to one end of the substrate of the gain chip.

2. The photonic crystal semiconductor laser according to claim 1, characterized in that: The photonic crystal semiconductor laser further comprises: a light-transmitting first heat dissipation structure, wherein the first heat dissipation structure is at least located on a surface of the substrate away from the active layer, and the material of the first heat dissipation structure comprises diamond or sapphire.

3. The photonic crystal semiconductor laser according to claim 2, characterized in that: A surface of the first heat dissipation structure away from the substrate has an anti-reflection film.

4. The photonic crystal semiconductor laser according to claim 1, characterized in that: The photonic crystal semiconductor laser further comprises: a light-transmitting second heat dissipation structure, the second heat dissipation structure is at least located on a surface of the photonic crystal structure away from the window layer, and the material of the second heat dissipation structure comprises diamond or sapphire.

5. The photonic crystal semiconductor laser according to claim 4, characterized in that: A surface of the second heat dissipation structure away from the photonic crystal structure has an anti-reflection film.

6. The photonic crystal semiconductor laser according to claim 4, characterized in that: The second heat dissipation structure is connected to the top side wall, and the gain chip is arranged on the light exit window through the second heat dissipation structure.

7. The photonic crystal semiconductor laser according to claim 1, characterized in that: The top side wall, the bottom side wall and the annular side wall are an integrally formed structure, and the materials of the top side wall, the bottom side wall and the annular side wall are the same, and the materials of the top side wall, the bottom side wall and the annular side wall all include high-purity copper.

8. The photonic crystal semiconductor laser according to claim 1, characterized in that: The plurality of holes include at least one of circular holes, rectangular holes, triangular holes or irregular holes.

9. The photonic crystal semiconductor laser according to claim 1, characterized in that: The pump unit is a surface emitting semiconductor laser.

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